JP6080354B2 - 圧電材料、圧電素子、液体吐出ヘッド、超音波モータおよび塵埃除去装置 - Google Patents
圧電材料、圧電素子、液体吐出ヘッド、超音波モータおよび塵埃除去装置 Download PDFInfo
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- 239000000463 material Substances 0.000 title claims description 105
- 239000007788 liquid Substances 0.000 title claims description 34
- 239000000428 dust Substances 0.000 title claims description 29
- 230000003287 optical effect Effects 0.000 claims description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 32
- 239000010936 titanium Substances 0.000 description 32
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical group [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 29
- 239000010955 niobium Substances 0.000 description 26
- 239000013078 crystal Substances 0.000 description 24
- 230000015572 biosynthetic process Effects 0.000 description 20
- 238000004364 calculation method Methods 0.000 description 20
- 239000010409 thin film Substances 0.000 description 20
- 238000003786 synthesis reaction Methods 0.000 description 17
- 229910052757 nitrogen Inorganic materials 0.000 description 16
- 239000000203 mixture Substances 0.000 description 14
- 239000010408 film Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 12
- 239000001301 oxygen Substances 0.000 description 12
- 229910052760 oxygen Inorganic materials 0.000 description 12
- 230000005684 electric field Effects 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 125000004429 atom Chemical group 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 125000004433 nitrogen atom Chemical group N* 0.000 description 5
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- BDAGIHXWWSANSR-NJFSPNSNSA-N hydroxyformaldehyde Chemical compound O[14CH]=O BDAGIHXWWSANSR-NJFSPNSNSA-N 0.000 description 3
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 3
- 238000005457 optimization Methods 0.000 description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 238000004698 pseudo-potential method Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910000018 strontium carbonate Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910002367 SrTiO Inorganic materials 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
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- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229920001651 Cyanoacrylate Polymers 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- MWCLLHOVUTZFKS-UHFFFAOYSA-N Methyl cyanoacrylate Chemical compound COC(=O)C(=C)C#N MWCLLHOVUTZFKS-UHFFFAOYSA-N 0.000 description 1
- 229910004121 SrRuO Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000009770 conventional sintering Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000006114 decarboxylation reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 230000001699 photocatalysis Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000004663 powder metallurgy Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/02—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by distortion, beating, or vibration of the surface to be cleaned
- B08B7/026—Using sound waves
- B08B7/028—Using ultrasounds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14201—Structure of print heads with piezoelectric elements
- B41J2/14233—Structure of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N2/00—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction
- H02N2/10—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction producing rotary motion, e.g. rotary motors
- H02N2/106—Langevin motors
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N2/00—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction
- H02N2/10—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction producing rotary motion, e.g. rotary motors
- H02N2/16—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction producing rotary motion, e.g. rotary motors using travelling waves, i.e. Rayleigh surface waves
- H02N2/163—Motors with ring stator
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8536—Alkaline earth metal based oxides, e.g. barium titanates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2202/00—Embodiments of or processes related to ink-jet or thermal heads
- B41J2202/01—Embodiments of or processes related to ink-jet heads
- B41J2202/03—Specific materials used
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Ceramic Products (AREA)
- Apparatuses For Generation Of Mechanical Vibrations (AREA)
- General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
Description
実施例1として、一般式(1)において、正方晶(Ba1−xSrx)(Ti1−3z(Nb1−yTay)3z)(O1−zNz)3からなる圧電材料に関する実施形態を、図1及び図2に基づいて説明する。
Ba(Ti0.745Nb0.255)(O0.915N0.085)3薄膜の合成(x=0、y=0、z=0.085、w=0.085の例)
スパッタ装置による成膜の場合を示す。O2ガス、N2ガス及びArガスの比が1:20:20、圧力が0.5Paのガスが流入しているチャンバー内に、例えばBa、Ti及びNbの金属ホルダー、及び、例えばLa−SrTiO3(100)単結晶基板を用意する。基板としては、膜の配向性が向上することで圧電特性も向上するため、単結晶基板を用いることが好ましい。
(Ba0.90Sr0.10)(Ti0.70(Nb0.50Ta0.50)0.30)(O0.90N0.10)3セラミックスの合成(x=0.10、y=0.50、z=0.10、w=0.10の例)
炭酸バリウム(BaCO3)、炭酸ストロンチウム(SrCO3)、窒化チタン(Ti3N4)、酸化ニオブ(Nb2O5)及び酸化タンタル(Ta2O5)を54:6:14:9:9のモル比で混合した後、微量のKClO4を酸化剤として添加する。酸性水溶液に加熱し、懸濁、溶解させた後、アルカリ処理により析出物をろ過、採取、乾燥し、(Ba0.90Sr0.10)(Ti0.70(Nb0.50Ta0.50)0.30)(O0.90N0.10)3を合成する。その後、ボールミルで粉砕、大気中1100℃で加熱処理を行い、加圧形成機で成形した後、10MPaの窒素雰囲気、10時間、1250℃の条件で焼結を行うことで、本合成例の圧電材料を得る。
次に、一般式(1)において、正方晶(Ba1−xSrx)(Ti1−3z(Nb1−yTay)3z)(O1−zNz)3からなる圧電材料に関する実施形態を、図1及び図2を参考にして説明する。
(Ba0.90Sr0.10)(Ti0.40(Nb0.50Ta0.50)0.60)(O0.80N0.20)3薄膜の合成(x=0.10、y=0.50、z=0.20、w=0.20の例)
RFマグネトロンスパッタ装置による成膜の場合を示す。炭酸バリウム(BaCO3)、炭酸ストロンチウム(SrCO3)、酸化チタン(TiO2)、酸化ニオブ(Nb2O5)及び酸化タンタル(Ta2O5)を9:1:4:3:3のモル比で混合した粉末を10MPaで一軸加圧した成型体をターゲットとして用意する。O2ガス、N2ガス及びArガスの比が1:20:20、圧力が0.5Paのガスが流入しているチャンバー内で、SrTiO3(100)単結晶基板上に(100)配向SrRuO3が成膜された基板を600℃に加熱する。O2、N2及びAr雰囲気中で前記成型体をターゲットとして基板上に成膜することにより、目的とする厚さ200nm以上10μm以下の膜状の圧電材料を得ることが出来る。
(Ba0.60Sr0.40)(Ti0.40(Nb0.50Ta0.50)0.60)(O0.80N0.20)3セラミックスの合成(x=0.40、y=0.50、z=0.20、w=0.20の例)
炭酸バリウム(BaCO3)、炭酸ストロンチウム(SrCO3)、窒化チタン(Ti3N4)、酸化ニオブ(Nb2O5)及び酸化タンタル(Ta2O5)を18:12:4:9:9のモル比で混合する。この混合粉をペレット化して常圧、900℃で仮焼することで脱炭酸を行う。ペレットの粉砕物を微量のKClO4を酸化剤として敷き詰めた白金カプセルに封入して、1200℃、6GPaの条件で焼結することで、本発明の圧電材料を得る。さらに、焼結体を研磨処理し、電極付けした後5kV/cmの電界強度で分極処理を行うことで、本発明の圧電素子を得る。
次に実施例3として、本発明の圧電材料を用いた圧電素子、及び該圧電素子を用いた液体吐出ヘッド、超音波モータ及び塵埃除去装置に関する説明を図3乃至図7を用いて行う。
102 個別液室
103 振動板
104 液室隔壁
105 吐出口
106 連通孔
107 共通液室
108 バッファ層
1011 第一の電極
1012 圧電薄膜
1013 第二の電極
201 振動子
202 ロータ
203 出力軸
204 振動子
205 ロータ
206 バネ
2011 弾性体リング
2012 圧電素子
2013 有機系接着剤
2041 金属弾性体
2042 積層圧電素子
310 塵埃除去装置
330 圧電素子
320 振動板
330 圧電素子
331 圧電材料
332 第1の電極
333 第2の電極
336 第1の電極面
337 第2の電極面
310 塵埃除去装置
320 振動板
330 圧電素子
Claims (5)
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JP2011277566A JP6080354B2 (ja) | 2011-12-19 | 2011-12-19 | 圧電材料、圧電素子、液体吐出ヘッド、超音波モータおよび塵埃除去装置 |
US13/715,510 US8981626B2 (en) | 2011-12-19 | 2012-12-14 | Piezoelectric material, piezoelectric element, liquid ejection head, ultrasonic motor, and dust removing device |
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JP2011277566A JP6080354B2 (ja) | 2011-12-19 | 2011-12-19 | 圧電材料、圧電素子、液体吐出ヘッド、超音波モータおよび塵埃除去装置 |
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JP2013128073A JP2013128073A (ja) | 2013-06-27 |
JP2013128073A5 JP2013128073A5 (ja) | 2015-02-19 |
JP6080354B2 true JP6080354B2 (ja) | 2017-02-15 |
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WO2015136953A1 (ja) | 2014-03-13 | 2015-09-17 | 国立研究開発法人科学技術振興機構 | ペロブスカイト型金属酸窒化物の製造方法 |
US10522288B2 (en) * | 2017-03-31 | 2019-12-31 | Tdk Corporation | Polycrystalline dielectric thin film and capacitance element |
EP3358039A4 (en) * | 2015-10-02 | 2019-05-15 | TDK Corporation | DIELECTRIC THIN FILM, CAPACITOR ELEMENT, AND ELECTRONIC COMPONENT |
JP6683476B2 (ja) * | 2015-12-25 | 2020-04-22 | 日本特殊陶業株式会社 | 圧電素子およびその製造方法、異物除去ユニットならびに超音波センサ |
WO2017135298A1 (ja) * | 2016-02-01 | 2017-08-10 | Tdk株式会社 | 誘電体磁器組成物および電子部品 |
JP6822419B2 (ja) * | 2016-02-01 | 2021-01-27 | Tdk株式会社 | 多結晶誘電体薄膜および容量素子 |
JP7000882B2 (ja) | 2017-03-31 | 2022-01-19 | Tdk株式会社 | 酸窒化物薄膜および容量素子 |
US10479732B2 (en) * | 2017-03-31 | 2019-11-19 | Tdk Corporation | Oxynitride thin film and capacitance element |
JP7000883B2 (ja) * | 2017-03-31 | 2022-01-19 | Tdk株式会社 | 酸窒化物薄膜および容量素子 |
US10475586B2 (en) * | 2017-03-31 | 2019-11-12 | Tdk Corporation | Oxynitride thin film and capacitance element |
CN108199619B (zh) * | 2018-01-23 | 2019-06-21 | 南京邮电大学 | 互补型压电能量收集器及其制作方法 |
CN112085939A (zh) * | 2020-09-09 | 2020-12-15 | 广州伽年科技有限公司 | 一种便于互联网数据采集信息传输装置 |
CN113182157B (zh) * | 2021-04-27 | 2023-04-18 | 之江实验室 | 一种柔性压电超声波换能器 |
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FR2573060B1 (fr) * | 1984-11-13 | 1987-02-20 | Centre Nat Rech Scient | Composes azotes ou oxyazotes a structure perovskite, leur preparation et leur application a la fabrication de composants dielectriques |
FR2769612A1 (fr) * | 1997-10-13 | 1999-04-16 | Rhodia Chimie Sa | Composition oxynitruree a base d'un alcalino-terreux et de tantale ou d'un alcalino-terreux et de niobium, procedes de preparation et utilisation comme pigment colorant |
US20020036282A1 (en) * | 1998-10-19 | 2002-03-28 | Yet-Ming Chiang | Electromechanical actuators |
EP1037244A3 (en) * | 1999-03-12 | 2003-01-08 | TDK Corporation | Electron-emitting material and preparing process |
JP3137960B2 (ja) * | 1999-03-12 | 2001-02-26 | ティーディーケイ株式会社 | 電子放出材料 |
JP2004292180A (ja) * | 2003-03-25 | 2004-10-21 | Hiroshi Irie | 強誘電体材料及びその製造方法 |
JP2010143789A (ja) * | 2008-12-18 | 2010-07-01 | Canon Inc | 圧電体材料 |
JP2010143788A (ja) * | 2008-12-18 | 2010-07-01 | Canon Inc | 酸窒化物圧電材料及びその製造方法 |
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US20130154443A1 (en) | 2013-06-20 |
US8981626B2 (en) | 2015-03-17 |
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