FR2573060B1 - Composes azotes ou oxyazotes a structure perovskite, leur preparation et leur application a la fabrication de composants dielectriques - Google Patents
Composes azotes ou oxyazotes a structure perovskite, leur preparation et leur application a la fabrication de composants dielectriquesInfo
- Publication number
- FR2573060B1 FR2573060B1 FR8417274A FR8417274A FR2573060B1 FR 2573060 B1 FR2573060 B1 FR 2573060B1 FR 8417274 A FR8417274 A FR 8417274A FR 8417274 A FR8417274 A FR 8417274A FR 2573060 B1 FR2573060 B1 FR 2573060B1
- Authority
- FR
- France
- Prior art keywords
- compounds
- perovskite structure
- nitrogen
- oxyazote
- manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 title abstract 4
- 150000001875 compounds Chemical class 0.000 title abstract 3
- 229910052757 nitrogen Inorganic materials 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000002184 metal Substances 0.000 abstract 4
- 125000002091 cationic group Chemical group 0.000 abstract 2
- 150000001768 cations Chemical class 0.000 abstract 2
- 239000006104 solid solution Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
- H01B3/12—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances ceramics
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/082—Compounds containing nitrogen and non-metals and optionally metals
- C01B21/0821—Oxynitrides of metals, boron or silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
- H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1254—Ceramic dielectrics characterised by the ceramic dielectric material based on niobium or tungsteen, tantalum oxides or niobates, tantalates
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/30—Three-dimensional structures
- C01P2002/34—Three-dimensional structures perovskite-type (ABO3)
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Inorganic Insulating Materials (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Ceramic Products (AREA)
- Compounds Of Iron (AREA)
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8417274A FR2573060B1 (fr) | 1984-11-13 | 1984-11-13 | Composes azotes ou oxyazotes a structure perovskite, leur preparation et leur application a la fabrication de composants dielectriques |
CA000494551A CA1258762A (fr) | 1984-11-13 | 1985-11-04 | Composes azotes ou oxyazotes a structure perovskyte, leur preparation et leur application a la fabrication de composants dielectriques |
US06/794,633 US4734390A (en) | 1984-11-13 | 1985-11-04 | Nitrogen or oxnitrogen compounds having a perovskyte structure, their preparation and their application to the manufacture of dielectric components |
DE8585402155T DE3564355D1 (en) | 1984-11-13 | 1985-11-07 | Nitrided or oxynitrided compounds with a perovskite sructure, their preparation and their use in the manufacture of dielectric components |
EP85402155A EP0184951B1 (fr) | 1984-11-13 | 1985-11-07 | Composés azotés ou oxyazotés à structure pérovskite, leur préparation et leur application à la fabrication de composants diélectriques |
AT85402155T ATE36426T1 (de) | 1984-11-13 | 1985-11-07 | Nitrierte oder oxynitrierte zusammensetzungen mit perovskitstruktur, ihre herstellung und ihre anwendung zur herstellung von dielektrischen komponenten. |
JP60250990A JPS61122108A (ja) | 1984-11-13 | 1985-11-11 | ペロブスキー石型構造を有する窒素又はオキシ窒素化合物、その製造方法及びこれを誘電体の製造に使用する方法 |
BR8505655A BR8505655A (pt) | 1984-11-13 | 1985-11-11 | Compostos nitrogenados ou oxinitrogenados com estrutura de perovskita e seu processo de preparacao |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8417274A FR2573060B1 (fr) | 1984-11-13 | 1984-11-13 | Composes azotes ou oxyazotes a structure perovskite, leur preparation et leur application a la fabrication de composants dielectriques |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2573060A1 FR2573060A1 (fr) | 1986-05-16 |
FR2573060B1 true FR2573060B1 (fr) | 1987-02-20 |
Family
ID=9309529
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8417274A Expired FR2573060B1 (fr) | 1984-11-13 | 1984-11-13 | Composes azotes ou oxyazotes a structure perovskite, leur preparation et leur application a la fabrication de composants dielectriques |
Country Status (8)
Country | Link |
---|---|
US (1) | US4734390A (fr) |
EP (1) | EP0184951B1 (fr) |
JP (1) | JPS61122108A (fr) |
AT (1) | ATE36426T1 (fr) |
BR (1) | BR8505655A (fr) |
CA (1) | CA1258762A (fr) |
DE (1) | DE3564355D1 (fr) |
FR (1) | FR2573060B1 (fr) |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2613118B1 (fr) * | 1987-03-27 | 1989-07-21 | Centre Nat Rech Scient | Perovskites oxyazotees conductrices, leur preparation et leur utilisation notamment comme materiau d'electrode |
DE4317421A1 (de) * | 1993-05-26 | 1994-12-01 | Cerdec Ag | Oxonitride der Formel LnTaON¶2¶ mit erhöhter Farbbrillanz, Verfahren zu deren Herstellung und deren Verwendung |
DE4429532A1 (de) * | 1994-08-19 | 1996-02-22 | Cerdec Ag | Farbpigmente auf der Basis von Oxidnitriden, deren Herstellung und Verwendung |
FR2724375B1 (fr) * | 1994-09-12 | 1996-12-20 | Cernix | Oxynitrures de germanium et de cadmium ainsi que leurs derives, preparation et precurseurs, ainsi que leurs applications comme capteurs de gaz et catalyseurs |
US5693102A (en) * | 1995-09-27 | 1997-12-02 | Cerdec Aktiengesellschaft Keramische Farben | Oxonitrides of the formula LnTaON2 with enhanced brightness and a process for their use |
US5934900A (en) * | 1996-03-29 | 1999-08-10 | Integrated Thermal Sciences, Inc. | Refractory nitride, carbide, ternary oxide, nitride/oxide, oxide/carbide, oxycarbide, and oxynitride materials and articles |
CN1085616C (zh) * | 1996-11-25 | 2002-05-29 | 袁壁疆 | 叠氮化钡的生产方法 |
DE19907618A1 (de) * | 1999-02-23 | 2000-08-24 | Dmc2 Degussa Metals Catalysts | Verfahren zur Herstellung von gelben bis roten Pigmenten auf der Basis von Nitriden und Oxidnitriden |
EP1037244A3 (fr) * | 1999-03-12 | 2003-01-08 | TDK Corporation | Matériau émetteur d'électrons et son procédé de préparation |
JP3137961B2 (ja) * | 1999-03-19 | 2001-02-26 | ティーディーケイ株式会社 | 電子放出電極 |
KR20010030023A (ko) * | 1999-08-20 | 2001-04-16 | 마츠시타 덴끼 산교 가부시키가이샤 | 유전체막 및 그 제조방법 |
JP4107792B2 (ja) * | 2000-08-28 | 2008-06-25 | 独立行政法人科学技術振興機構 | 可視光応答性を有する金属オキシナイトライドからなる光触媒 |
US7285188B2 (en) * | 2001-12-21 | 2007-10-23 | Georgia Tech Research Corporation | Oxynitride compounds, methods of preparation, and uses thereof |
US7071139B2 (en) * | 2001-12-21 | 2006-07-04 | Georgia Tech Research Corporation | Oxynitride compounds, methods of preparation, and uses thereof |
AU2003247663A1 (en) * | 2002-06-28 | 2004-01-19 | Arizona Board Of Regents | Barium cadmium tantalum-based compound having high dielectric properties and method of making the same |
KR100696788B1 (ko) * | 2005-04-26 | 2007-03-19 | 삼성에스디아이 주식회사 | 전자기기의 외장재 |
US8287831B2 (en) * | 2007-01-04 | 2012-10-16 | Carnegie Institution Of Washington | Ordered oxynitride perovskites |
CZ301005B6 (cs) * | 2008-08-29 | 2009-10-14 | Fyzikální ústav AV CR, v.v.i. | Zpusob prípravy hybridních nanocástic z aglomerátu nanocástic komplexních vícesložkových oxidu kovu |
JP2010143788A (ja) * | 2008-12-18 | 2010-07-01 | Canon Inc | 酸窒化物圧電材料及びその製造方法 |
JP2010143789A (ja) * | 2008-12-18 | 2010-07-01 | Canon Inc | 圧電体材料 |
US20100209779A1 (en) * | 2009-02-02 | 2010-08-19 | Recapping, Inc. | High energy density electrical energy storage devices |
JP5526424B2 (ja) * | 2009-02-27 | 2014-06-18 | 独立行政法人産業技術総合研究所 | TaON構造を有するタンタル(V)系酸窒化物含有粉体、その製造方法及び顔料 |
JP2011093743A (ja) * | 2009-10-29 | 2011-05-12 | National Institute Of Advanced Industrial Science & Technology | ペロブスカイト構造を有するタンタル(v)系酸窒化物含有粉体及びその製造方法 |
CN102858691B (zh) * | 2010-04-28 | 2015-09-23 | 株式会社村田制作所 | 具有阴离子控制的介电性质的钙钛矿材料、薄膜电容器器件及其制造方法 |
JP5807861B2 (ja) * | 2011-06-21 | 2015-11-10 | 昭和電工株式会社 | 誘電体組成物及びその製造方法 |
JP6080354B2 (ja) * | 2011-12-19 | 2017-02-15 | キヤノン株式会社 | 圧電材料、圧電素子、液体吐出ヘッド、超音波モータおよび塵埃除去装置 |
JP6016199B2 (ja) * | 2013-03-26 | 2016-10-26 | Toto株式会社 | 複合金属酸化物粒子およびその製造方法 |
WO2015136953A1 (fr) | 2014-03-13 | 2015-09-17 | 国立研究開発法人科学技術振興機構 | Procédé de production d'oxynitrure de métal de type pérovskite |
US10522288B2 (en) * | 2017-03-31 | 2019-12-31 | Tdk Corporation | Polycrystalline dielectric thin film and capacitance element |
EP3358039A4 (fr) * | 2015-10-02 | 2019-05-15 | TDK Corporation | Film mince diélectrique, élément de condensateur, et composant électronique |
WO2017135298A1 (fr) | 2016-02-01 | 2017-08-10 | Tdk株式会社 | Composition de porcelaine diélectrique et composant électronique |
KR20180094020A (ko) | 2016-02-01 | 2018-08-22 | 티디케이가부시기가이샤 | 다결정 유전체 박막 및 용량 소자 |
JP6822419B2 (ja) | 2016-02-01 | 2021-01-27 | Tdk株式会社 | 多結晶誘電体薄膜および容量素子 |
JP2018024939A (ja) * | 2016-07-28 | 2018-02-15 | パナソニック株式会社 | 小さいキャリア密度を有するストロンチウムニオブ酸窒化物膜の製法およびその用途 |
US10479732B2 (en) | 2017-03-31 | 2019-11-19 | Tdk Corporation | Oxynitride thin film and capacitance element |
US10475586B2 (en) | 2017-03-31 | 2019-11-12 | Tdk Corporation | Oxynitride thin film and capacitance element |
JP7058415B2 (ja) * | 2017-11-10 | 2022-04-22 | Tdk株式会社 | 金属酸窒化物粉末および金属酸窒化物焼成体 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1429307A (fr) * | 1964-11-27 | 1966-02-25 | Centre Nat Rech Scient | Procédé de préparation des solutions solides de nitrures et d'oxynitrures de certains métaux de transition et nouvelles solutions solides desdits nitrures et oxynitrures |
US3326820A (en) * | 1965-04-22 | 1967-06-20 | Ibm | Arc process for forming high melting point compounds |
-
1984
- 1984-11-13 FR FR8417274A patent/FR2573060B1/fr not_active Expired
-
1985
- 1985-11-04 US US06/794,633 patent/US4734390A/en not_active Expired - Fee Related
- 1985-11-04 CA CA000494551A patent/CA1258762A/fr not_active Expired
- 1985-11-07 EP EP85402155A patent/EP0184951B1/fr not_active Expired
- 1985-11-07 AT AT85402155T patent/ATE36426T1/de not_active IP Right Cessation
- 1985-11-07 DE DE8585402155T patent/DE3564355D1/de not_active Expired
- 1985-11-11 JP JP60250990A patent/JPS61122108A/ja active Pending
- 1985-11-11 BR BR8505655A patent/BR8505655A/pt not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE3564355D1 (en) | 1988-09-15 |
EP0184951A1 (fr) | 1986-06-18 |
ATE36426T1 (de) | 1988-08-15 |
US4734390A (en) | 1988-03-29 |
FR2573060A1 (fr) | 1986-05-16 |
BR8505655A (pt) | 1986-08-12 |
EP0184951B1 (fr) | 1988-08-10 |
CA1258762A (fr) | 1989-08-29 |
JPS61122108A (ja) | 1986-06-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |