JP6076052B2 - 成膜装置のクリーニング方法 - Google Patents
成膜装置のクリーニング方法 Download PDFInfo
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- JP6076052B2 JP6076052B2 JP2012253906A JP2012253906A JP6076052B2 JP 6076052 B2 JP6076052 B2 JP 6076052B2 JP 2012253906 A JP2012253906 A JP 2012253906A JP 2012253906 A JP2012253906 A JP 2012253906A JP 6076052 B2 JP6076052 B2 JP 6076052B2
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- 239000010450 olivine Substances 0.000 description 1
- 229910052609 olivine Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007784 solid electrolyte Substances 0.000 description 1
- 239000004071 soot Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0064—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes
- B08B7/0071—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes by heating
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
- C23C16/0281—Deposition of sub-layers, e.g. to promote the adhesion of the main coating of metallic sub-layers
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C16/26—Deposition of carbon only
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66431—Unipolar field-effect transistors with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7781—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with inverted single heterostructure, i.e. with active layer formed on top of wide bandgap layer, e.g. IHEMT
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- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Description
本実施の形態では、本発明に係る成膜装置の一例について、図1及び図2を用いて説明する。
本実施の形態では、本発明に係る成膜装置を用いてグラフェンを形成する方法について、図1及び図3を用いて説明する。
本実施の形態では、実施の形態1で示した本発明に係る成膜装置についてのクリーニング方法を説明する。
本実施の形態では、実施の形態2で形成したグラフェンをチャネルとして用いた、トップゲート型の電界効果トランジスタの作製例について、図4及び図5を用いて説明する。
本実施の形態では、実施の形態2で形成したグラフェンを用いた、リチウム二次電池の作製例について説明する。
101 外筒
102 内筒
103 被処理体支持手段
104 被処理体
105 蓋部
106 回転軸
107 排気口
108 ガス供給ノズル
109a 加熱手段
109b 加熱手段
109c 加熱手段
109d 加熱手段
110 間隙
111 シール部材
112 処理室
200 基板
201 金属触媒層
202 金属触媒層
203 グラフェン
400 基板
401 絶縁膜
402 グラフェン
403 絶縁膜
404 絶縁膜
405 ゲート電極
406 絶縁膜
407 絶縁膜
408 スルーホール
409 プラグ
410 ソース配線又はドレイン配線
411a 金属触媒層
411b 金属触媒層
500 コイン形のリチウム二次電池
501 負極缶
502 ガスケット
503 正極缶
504 負極集電体
505 負極活物質層
506 セパレータ
507 正極活物質層
508 正極集電体
509 負極
510 正極
520 円筒型のリチウム二次電池
521 正極キャップ
522 電池缶
523 正極端子
524 正極
525 セパレータ
526 負極
527 負極端子
528 絶縁板
529 絶縁板
530 ガスケット
531 PTC素子
532 安全弁機構
Claims (3)
- 熱CVD法により処理室の内壁に堆積した炭素膜を除去するために、
前記処理室内を700℃以上800℃以下の温度で加熱し、
前記処理室にオゾン及び不活性ガスの混合ガスを導入することを特徴とするバッチ処理式のホットウォール型成膜装置のクリーニング方法。 - 請求項1において、
前記炭素膜は、アルカリ金属又はアルカリ土類金属が含まれていることを特徴とするバッチ処理式のホットウォール型成膜装置のクリーニング方法。 - 請求項1又は2において、
前記処理室の内壁は、石英ガラス、アルミ合金、又はステンレスが用いられていることを特徴とするバッチ処理式のホットウォール型成膜装置のクリーニング方法。
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JP (1) | JP6076052B2 (ja) |
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JP5539302B2 (ja) * | 2011-12-21 | 2014-07-02 | 三菱電機株式会社 | カーボン膜除去方法 |
JP5910294B2 (ja) * | 2012-05-10 | 2016-04-27 | 富士通株式会社 | 電子装置及び積層構造体の製造方法 |
US9133545B2 (en) * | 2013-10-23 | 2015-09-15 | Corning Incorporated | Glass-ceramics substrates for graphene growth |
JP6397621B2 (ja) * | 2013-12-26 | 2018-09-26 | 日本特殊陶業株式会社 | 基板保持部材の洗浄方法 |
JP2016143462A (ja) * | 2015-01-30 | 2016-08-08 | 日立化成株式会社 | リチウムイオン二次電池用負極活物質、およびリチウムイオン二次電池 |
WO2016178117A1 (en) | 2015-05-06 | 2016-11-10 | Semiconductor Energy Laboratory Co., Ltd. | Secondary battery and electronic device |
EP3363066A4 (en) * | 2015-10-14 | 2019-03-27 | Northwestern University | METAL OXIDE SPINEL CATHODES COATED WITH GRAPHENE |
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US20210238745A1 (en) * | 2020-02-03 | 2021-08-05 | Applied Materials, Inc. | Showerhead assembly |
CN112908555B (zh) * | 2021-01-14 | 2022-07-01 | 重庆致贯科技有限公司 | 一种石墨烯导电膜加工装置 |
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2012
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US20130130476A1 (en) | 2013-05-23 |
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