JP6071650B2 - 半導体発光装置 - Google Patents
半導体発光装置 Download PDFInfo
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- JP6071650B2 JP6071650B2 JP2013040488A JP2013040488A JP6071650B2 JP 6071650 B2 JP6071650 B2 JP 6071650B2 JP 2013040488 A JP2013040488 A JP 2013040488A JP 2013040488 A JP2013040488 A JP 2013040488A JP 6071650 B2 JP6071650 B2 JP 6071650B2
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- 239000004065 semiconductor Substances 0.000 title claims description 123
- 239000000758 substrate Substances 0.000 claims description 59
- 239000002184 metal Substances 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 230000004888 barrier function Effects 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims 3
- 239000010410 layer Substances 0.000 description 113
- 229910052710 silicon Inorganic materials 0.000 description 45
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 44
- 239000010703 silicon Substances 0.000 description 44
- 230000015556 catabolic process Effects 0.000 description 11
- 238000000034 method Methods 0.000 description 9
- 230000001681 protective effect Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000012790 adhesive layer Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 239000011241 protective layer Substances 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 230000006378 damage Effects 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- -1 AlGaInP Inorganic materials 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12032—Schottky diode
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Led Devices (AREA)
Description
さらに、半導体発光素子側の半導体支持基板の第1の面側に設けられた絶縁層を具備し、半導体発光素子は絶縁層上に設けられ、第2の電源端子は絶縁層上の半導体発光素子に電気的に接続され、第2の電源端子は半導体発光素子側の半導体支持基板の第1の面上に設けられる。
他方、半導体発光素子の電極は半導体支持基板と直接接触され、第2の電源端子は半導体発光素子と反対側の半導体支持基板の第2の面上に設けられる。
図6においては、図5のn型GaN層4−2、活性層5−2、p型GaN層6−2、n型GaN層4−1、活性層5−1及びp型GaN層6−1側にビアホール11を形成し、このビアホール11側に、p側電極12、導電層13、酸化シリコン、窒化シリコン等よりなる絶縁層14及びビア(貫通)電極としてn側電極15を形成しておく。この積層体をp型シリコン層2及び絶縁層3が形成されたp+型シリコン支持基板1にフェイスダウン法によって実装する。
D1、D2:LED素子
SBD:ショットキーダイオード素子
1:p+型シリコン支持基板
2:p型シリコン層
3:絶縁層
4−1、4−2:n型GaN層
5−1、5−2:活性層
6−1、6−2:p型GaN層
7:接合層
8−1、8−2:保護層
11−1、11−2、11:ビアホール
12−1、12−2、12:p側電極
13−1、13−2、13:導電層
14−1、14−2、14:絶縁層
15−1、15−2、15:n側電極
16−1、16−2、16:配線層
Claims (6)
- pもしくはn導電型の半導体支持基板と、
前記半導体支持基板上に設けられ、前記半導体支持基板の第1の抵抗率より大きい第2の抵抗率を有する前記導電型の半導体層と、
前記半導体層に接触して設けられ、該半導体層とショットキー障壁を形成する第1の金属よりなる第1の電源端子と、
前記半導体支持基板上に設けられ、該半導体支持基板とオーミック接触する第2の金属よりなる第2の電源端子と、
前記第1、第2の電源端子間に接続された半導体発光素子と
を具備し、該半導体発光素子と前記半導体層及び前記第1の金属よりなるショットキーダイオード素子とが前記第1、第2の電源端子間で逆並列接続してなり、
さらに、前記半導体発光素子側の前記半導体支持基板の第1の面側に設けられた絶縁層を具備し、
前記半導体発光素子は前記絶縁層上に設けられ、
前記第2の電源端子は前記絶縁層上の前記半導体発光素子に電気的に接続され、
前記第2の電源端子は前記半導体発光素子側の前記半導体支持基板の前記第1の面上に設けられた半導体発光装置。 - pもしくはn導電型の半導体支持基板と、
前記半導体支持基板上に形成され、前記半導体支持基板の第1の抵抗率より大きい第2の抵抗率を有する前記導電型の半導体層と、
前記半導体層に接触して設けられ、該半導体層とショットキー障壁を形成する第1の金属よりなる第1の電源端子と、
前記半導体支持基板上に設けられ、該半導体支持基板とオーミック接触する第2の金属よりなる第2の電源端子と、
前記第1、第2の電源端子間に接続された半導体発光素子と
を具備し、該半導体発光素子と前記半導体層及び前記第1の金属よりなるショットキーダイオード素子とが前記第1、第2の電源端子間で逆並列接続してなり、
前記半導体発光素子の電極は前記半導体支持基板と直接接触され、
前記第2の電源端子は前記半導体発光素子と反対側の前記半導体支持基板の第2の面上に設けられた半導体発光装置。 - 前記半導体発光素子は直列接続された複数の発光ダイオード素子である請求項1又は2に記載の半導体発光装置。
- 前記複数の発光ダイオード素子は並置された請求項3に記載の半導体発光装置。
- 前記複数の発光ダイオード素子は積層された請求項3に記載の半導体発光装置。
- 前記半導体支持基板及び前記半導体層は前記導電型の同一不純物を含み、
前記半導体層の前記不純物の濃度は前記半導体支持基板の前記不純物の濃度より小さい請求項1又は2に記載の半導体発光装置。
Priority Applications (2)
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JP2013040488A JP6071650B2 (ja) | 2013-03-01 | 2013-03-01 | 半導体発光装置 |
US14/194,071 US8963172B2 (en) | 2013-03-01 | 2014-02-28 | Optical semiconductor device including antiparallel semiconductor light-emitting element and Schottky diode element |
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JP2013040488A JP6071650B2 (ja) | 2013-03-01 | 2013-03-01 | 半導体発光装置 |
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JP6071650B2 true JP6071650B2 (ja) | 2017-02-01 |
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JP (1) | JP6071650B2 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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RU2591041C2 (ru) * | 2011-06-08 | 2016-07-10 | Конинклейке Филипс Н.В. | Диодный осветительный прибор |
US10109221B2 (en) | 2015-10-12 | 2018-10-23 | Evigia Systems, Inc. | Tamper-proof electronic bolt-seal |
KR102532303B1 (ko) | 2015-11-03 | 2023-05-15 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
FR3044167B1 (fr) * | 2015-11-20 | 2018-01-05 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif optoelectronique a diodes electroluminescentes comportant au moins une diode zener |
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Publication number | Priority date | Publication date | Assignee | Title |
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US8704241B2 (en) * | 2005-05-13 | 2014-04-22 | Epistar Corporation | Light-emitting systems |
CN101795510A (zh) * | 2005-06-28 | 2010-08-04 | 首尔Opto仪器股份有限公司 | 发光装置 |
TWI257186B (en) * | 2005-09-29 | 2006-06-21 | Formosa Epitaxy Inc | Light-emitting diode chip |
DE102006046038A1 (de) * | 2006-09-28 | 2008-04-03 | Osram Opto Semiconductors Gmbh | LED-Halbleiterkörper und Verwendung eines LED-Halbleiterkörpers |
DE102008022942A1 (de) * | 2008-05-09 | 2009-11-12 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Halbleiterchip |
KR100999784B1 (ko) * | 2010-02-23 | 2010-12-08 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지 |
DE102011015821B4 (de) * | 2011-04-01 | 2023-04-20 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterchip |
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2013
- 2013-03-01 JP JP2013040488A patent/JP6071650B2/ja active Active
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2014
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US20140246686A1 (en) | 2014-09-04 |
JP2014170776A (ja) | 2014-09-18 |
US8963172B2 (en) | 2015-02-24 |
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