JP6054873B2 - トレイデバイスおよび結晶膜成長装置 - Google Patents
トレイデバイスおよび結晶膜成長装置 Download PDFInfo
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- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
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Description
各プロセスガス送出チューブについて、前記プロセスガス送出チューブが通過するために使用される貫通穴は、前記出口の下の前記フィン上に配置されるだけであり、
前記複数のプロセスガス送出チューブは、各貫通穴を通過して、前記トレイが積重ねられる方向に沿って延在し、各プロセスガス送出チューブから流出する前記プロセスガスは、前記出口の上のフィンに衝突して、流れ方向が変化し、最終的に、対応する前記トレイの表面に達する。
前記回転機構は、前記プロセスガス送出システムに接続され、前記回転機構の回転軸の周りに回転するよう前記プロセスガス送出システムを駆動して、各トレイ上の異なる位置の温度および/または空気流を均一にする、および/または、
前記回転機構は、前記誘導加熱器に接続され、前記回転機構の回転軸の周りに回転するよう前記誘導加熱器を駆動して、各トレイ上の異なる位置の温度および/または空気流を均一にする。
Claims (26)
- 処理される基板を保持するように構成されるトレイデバイスであって、
縦方向に積重ねられた複数のトレイを含み、前記各トレイはリング状構造であり、このリング状構造の本体部分上に処理予定の複数の基板を配置可能であり、2つの隣接するトレイ間に一定の距離が存在し、
前記縦方向に積重ねられた前記複数のトレイの間で、第1の凸部分が、最下の層のトレイを除く前記トレイのそれぞれの背面上に配置され、前記第1の凸部分に嵌合する第2の凹部分が、その背面上に前記第1の凸部分が配置される前記トレイに面するトレイの前面上に配置されること、および、
前記縦方向に積重ねられた前記複数のトレイの間で、第1の凹部分が、前記最下のトレイを除く前記トレイのそれぞれの背面上に配置され、前記第1の凹部分に嵌合する第2の凸部分が、その背面上に前記第1の凹部分が配置される前記トレイに面するトレイの前面上に配置されること、または、これらのいずれかが行われ、
前記隣接するトレイは、前記第1の凸部分と前記第2の凹部分との間の嵌合および前記第2の凸部分と前記第1の凹部分との間の嵌合またはこれらのいずれかによって、該隣接するトレイ間に一定の距離がある状態で重ねられること
を特徴とするトレイデバイス。 - 前記トレイの数が少なくとも4であるとき、最上の層のトレイおよび前記最下の層のトレイは、基板を保持しないアクセサリトレイとして働くこと
を特徴とする請求項1に記載のトレイデバイス。 - 前記トレイの材料は、グラファイト、モリブデン、又はモリブデン合金を含むこと
を特徴とする請求項1に記載のトレイデバイス。 - 前記トレイは、グラファイトから作られ、
前記トレイの表面は、SiCでコーティングされること
を特徴とする請求項1に記載のトレイデバイス。 - 保持され得る基板の材料は、サファイア、Ge、GaAs、GaN、SiC、ZnOまたはSiを含むこと
を特徴とする請求項1に記載のトレイデバイス。 - 同期回転運動または独立回転運動を行うように各トレイを駆動するための回転機構をさらに含むこと
を特徴とする請求項1に記載のトレイデバイス。 - プロセスチャンバー、プロセスガス送出システムおよび排気システムを含む結晶膜成長装置であって、請求項1〜6のいずれかに記載のトレイデバイスが、プロセス中に基板を保持するために前記プロセスチャンバー内に配置されること
を特徴とする結晶膜成長装置。 - 前記プロセスガス送出システムは、前記プロセスチャンバーの縁部分に配置され、
前記プロセスガス送出システムは、プロセスガス入口およびプロセスガス出口を含み、
前記プロセスガス入口は、前記プロセスチャンバーの外側から前記プロセスガス送出システム内に前記プロセスガスを導入し、前記プロセスガス送出システム内の前記プロセスガスは、前記プロセスガス出口を介して前記プロセスチャンバーに入り、前記トレイデバイスによって保持される各基板に達すること
を特徴とする請求項7に記載の結晶膜成長装置。 - 前記トレイはリング状であり、
前記プロセスガス送出システムは、前記トレイが積重ねられる方向に沿って前記積重ねられたトレイの中空部分を通して貫通し、
前記プロセスガス送出システムは、プロセスガス入口およびプロセスガス出口を含み、
前記プロセスガス入口は、前記プロセスチャンバーの外側から前記プロセスガス送出システム内に前記プロセスガスを導入し、
前記プロセスガス送出システム内の前記プロセスガスは、前記プロセスガス出口を介して前記プロセスチャンバーに入り、前記トレイデバイスによって保持される各基板に達すること
を特徴とする請求項7に記載の結晶膜成長装置。 - 各トレイに対応するプロセスガス出口が、前記プロセスガスが各トレイに直接出力されるように、前記プロセスガス送出システム上に配置されること
を特徴とする請求項7に記載の結晶膜成長装置。 - 前記プロセスガスを冷却するための水冷チューブが、同様に前記プロセスガス送出システム内に配置されること
を特徴とする請求項7に記載の結晶膜成長装置。 - 前記プロセスガス送出システム内に、プロセスガス補充(compensating)通路が、前記プロセスガスの輸送を補助するために更に配置されること
を特徴とする請求項7に記載の結晶膜成長装置。 - 前記プロセスガス送出システム内に、ガス誘導デバイスおよび複数のプロセスガス送出チューブが配置され、
前記ガス誘導デバイスは、複数のフィンを含み、
前記複数のフィンは、前記トレイが積重ねられる方向に沿って上から下へ順次配置されること
を特徴とする請求項7に記載の結晶膜成長装置。 - 前記プロセスガス送出チューブが通過するために使用される貫通穴が、前記フィン上に配置され、
各プロセスガス送出チューブについて、前記プロセスガス送出チューブが通過するために使用される貫通穴は、前記出口の下の前記フィン上のみに配置され、
前記複数のプロセスガス送出チューブは、各貫通穴を通過して、前記トレイが積重ねられる方向に沿って延在し、
各プロセスガス送出チューブから流出する前記プロセスガスは、前記出口の上のフィンに衝突して、流れる方向が変化し、最終的に、対応する前記トレイの表面に達すること
を特徴とする請求項13に記載の結晶膜成長装置。 - 前記フィンの数と前記トレイの数とが同じであること
を特徴とする請求項13に記載の結晶膜成長装置。 - 冷却手段が、前記プロセスガス送出システム内に配置され、
前記冷却手段は、水冷アウターチューブおよび該水冷アウターチューブの内部に配置された水冷インナーチューブを含み、
冷却流体が、前記水冷インナーチューブを介して前記冷却手段に入り、前記水冷アウターチューブ上に設けられた出口を介して放出されること
を特徴とする請求項13に記載の結晶膜成長装置。 - 前記複数のフィンは、前記水冷アウターチューブの外壁上に配置されること
を特徴とする請求項16に記載の結晶膜成長装置。 - パージガスで前記プロセスチャンバーを清浄化するためのパージガス入口をさらに含むこと
を特徴とする請求項7に記載の結晶膜成長装置。 - 雰囲気を遮断するためにチャンバー内壁およびチャンバー外壁をさらに含み、
前記チャンバー内壁は、前記プロセスチャンバーおよび前記チャンバー外壁によって囲まれたキャビティ部分を形成するように周囲を囲み、
前記チャンバー内壁は、パージガス通路を形成すること
を特徴とする請求項7に記載の結晶膜成長装置。 - 誘導加熱器をさらに含むことを特徴とする請求項7に記載の結晶膜成長装置。
- 前記プロセスガス送出システムおよび前記誘導加熱器またはこれらのいずれかに対して回転するように前記トレイデバイスを駆動するための回転機構をさらに含むこと
を特徴とする請求項20に記載の結晶膜成長装置。 - 前記回転機構は、前記トレイデバイスに接続され、前記回転機構の回転軸の周りに回転するよう前記トレイデバイスを駆動して、各トレイ上の異なる位置の温度および/または空気流を均一にすること、
前記回転機構は、前記プロセスガス送出システムに接続され、前記回転機構の回転軸の周りに回転するよう前記プロセスガス送出システムを駆動して、各トレイ上の異なる位置の温度および空気流またはこれらのいずれかを均一にすること、および
前記回転機構は、前記誘導加熱器に接続され、前記回転機構の回転軸の周りに回転するよう前記誘導加熱器を駆動して、各トレイ上の異なる位置の温度および空気流またはこれらのいずれかを均一にすること、
またはこれらの少なくとも1つを行うこと
を特徴とする請求項21に記載の結晶膜成長装置。 - 前記排気システムは、
1m/s以上でかつ30m/s以下の速度で前記プロセスチャンバーからガスを圧送するためのポンピング機構を含むこと
を特徴とする請求項7に記載の結晶膜成長装置。 - 前記プロセスチャンバーと前記排気システムとの間に配置され、幾つかの貫通穴を介して前記プロセスチャンバーに連通するフィルターチャンバーをさらに含むこと
を特徴とする請求項7に記載結晶膜成長装置。 - 前記フィルターチャンバーは、
複数の積重ねられたフィルターベースプレートを含み、
各フィルターベースプレートは、多孔質材料で作られ、該フィルターベースプレート上に、複数の貫通穴が設けられること
を特徴とする請求項24に記載の結晶膜成長装置。 - 前記フィルターベースプレートは、グラファイトで作られ、
前記フィルターベースプレートの表面は、SiCでコーティングされ、
隣接するフィルターベースプレート上の貫通穴は、互いに変位すること
を特徴とする請求項25に記載の結晶膜成長装置。
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