FR3096058B1 - Dispositif de depôt chimique en phase vapeur presentant des zones de depôt reconfigurables - Google Patents
Dispositif de depôt chimique en phase vapeur presentant des zones de depôt reconfigurables Download PDFInfo
- Publication number
- FR3096058B1 FR3096058B1 FR1905073A FR1905073A FR3096058B1 FR 3096058 B1 FR3096058 B1 FR 3096058B1 FR 1905073 A FR1905073 A FR 1905073A FR 1905073 A FR1905073 A FR 1905073A FR 3096058 B1 FR3096058 B1 FR 3096058B1
- Authority
- FR
- France
- Prior art keywords
- deposit
- reconfigurable
- vapor phase
- plates
- zones
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000126 substance Substances 0.000 title 1
- 239000012808 vapor phase Substances 0.000 title 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000004020 conductor Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32577—Electrical connecting means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
- H01J37/32761—Continuous moving
- H01J37/32779—Continuous moving of batches of workpieces
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Analytical Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Dispositif de dépôt chimique en phase vapeur assisté par plasma sur une pluralité de substrats comportant :- une enceinte (2) configurée pour réaliser un dépôt chimique en phase vapeur assisté par plasma.- une nacelle (4) comportant n plateaux (P1, P2) superposés destinés à supporter chacun au moins un substrat, les plateaux (P1, P2) étant en un matériau conducteur électrique et étant isolés électriquement les uns des autres.- des moyens (6) d’alimentation en gaz et d’évacuation connectés à l’enceinte.- un générateur électrique (8).- un circuit de connexion électrique (10) entre le générateur électrique et les plateaux. comportant des moyens de commutation (C1, C2) de sorte que, au moins dans un état de commutation, deux plateaux adjacents ont les mêmes polarités et deux plateaux adjacents ont des polarités opposées. Figure de l’abrégé : 1.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1905073A FR3096058B1 (fr) | 2019-05-15 | 2019-05-15 | Dispositif de depôt chimique en phase vapeur presentant des zones de depôt reconfigurables |
CN202080035790.0A CN113840943A (zh) | 2019-05-15 | 2020-05-13 | 具有可重置沉积区域的化学气相沉积装置 |
PCT/EP2020/063306 WO2020229529A1 (fr) | 2019-05-15 | 2020-05-13 | Dispositif de depôt chimique en phase vapeur presentant des zones de depôt reconfigurables |
EP20724166.2A EP3947771A1 (fr) | 2019-05-15 | 2020-05-13 | Dispositif de depôt chimique en phase vapeur presentant des zones de depôt reconfigurables |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1905073 | 2019-05-15 | ||
FR1905073A FR3096058B1 (fr) | 2019-05-15 | 2019-05-15 | Dispositif de depôt chimique en phase vapeur presentant des zones de depôt reconfigurables |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3096058A1 FR3096058A1 (fr) | 2020-11-20 |
FR3096058B1 true FR3096058B1 (fr) | 2021-06-11 |
Family
ID=68424960
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1905073A Active FR3096058B1 (fr) | 2019-05-15 | 2019-05-15 | Dispositif de depôt chimique en phase vapeur presentant des zones de depôt reconfigurables |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP3947771A1 (fr) |
CN (1) | CN113840943A (fr) |
FR (1) | FR3096058B1 (fr) |
WO (1) | WO2020229529A1 (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114763607A (zh) * | 2021-01-14 | 2022-07-19 | 营口金辰机械股份有限公司 | 承托装置和等离子体增强化学气相沉积设备 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002134596A (ja) * | 2000-10-25 | 2002-05-10 | Tokyo Electron Ltd | 処理装置 |
US20020076507A1 (en) * | 2000-12-15 | 2002-06-20 | Chiang Tony P. | Process sequence for atomic layer deposition |
US20070048456A1 (en) * | 2004-09-14 | 2007-03-01 | Keshner Marvin S | Plasma enhanced chemical vapor deposition apparatus and method |
EP1921178A1 (fr) * | 2006-11-02 | 2008-05-14 | Dow Corning Corporation | Procédé de formation d'un film amorphe par résonance cyclotronique électronique |
CN101245449A (zh) * | 2007-02-14 | 2008-08-20 | 北京行者多媒体科技有限公司 | 大批量生产薄膜的等离子箱 |
CN101245448A (zh) * | 2007-02-14 | 2008-08-20 | 北京行者多媒体科技有限公司 | 单室等离子箱制作薄膜硅光电转换器件的方法 |
CN101328581B (zh) * | 2008-07-22 | 2010-12-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 等离子体处理设备及其基片载板 |
US8715789B2 (en) * | 2009-12-18 | 2014-05-06 | Sub-One Technology, Inc. | Chemical vapor deposition for an interior of a hollow article with high aspect ratio |
CN101880867B (zh) * | 2010-07-02 | 2012-12-26 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 等离子体增强化学气相沉积装置 |
CN102485953B (zh) * | 2010-12-01 | 2014-07-30 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 托盘装置及结晶膜生长设备 |
EP2730677B1 (fr) * | 2011-07-06 | 2016-09-28 | Kabushiki Kaisha Kobe Seiko Sho | Dispositif de formation de film sous vide |
JP6356516B2 (ja) * | 2014-07-22 | 2018-07-11 | 東芝メモリ株式会社 | プラズマ処理装置およびプラズマ処理方法 |
FR3055468B1 (fr) * | 2016-08-30 | 2018-11-16 | Semco Tech | Dispositif de traitement de pieces |
KR102125512B1 (ko) * | 2016-10-18 | 2020-06-23 | 주식회사 원익아이피에스 | 기판 처리 장치 및 기판 처리 방법 |
US10654147B2 (en) * | 2017-10-17 | 2020-05-19 | Applied Materials, Inc. | Polishing of electrostatic substrate support geometries |
-
2019
- 2019-05-15 FR FR1905073A patent/FR3096058B1/fr active Active
-
2020
- 2020-05-13 CN CN202080035790.0A patent/CN113840943A/zh active Pending
- 2020-05-13 WO PCT/EP2020/063306 patent/WO2020229529A1/fr unknown
- 2020-05-13 EP EP20724166.2A patent/EP3947771A1/fr active Pending
Also Published As
Publication number | Publication date |
---|---|
EP3947771A1 (fr) | 2022-02-09 |
FR3096058A1 (fr) | 2020-11-20 |
WO2020229529A1 (fr) | 2020-11-19 |
CN113840943A (zh) | 2021-12-24 |
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