FR3096058B1 - Dispositif de depôt chimique en phase vapeur presentant des zones de depôt reconfigurables - Google Patents

Dispositif de depôt chimique en phase vapeur presentant des zones de depôt reconfigurables Download PDF

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Publication number
FR3096058B1
FR3096058B1 FR1905073A FR1905073A FR3096058B1 FR 3096058 B1 FR3096058 B1 FR 3096058B1 FR 1905073 A FR1905073 A FR 1905073A FR 1905073 A FR1905073 A FR 1905073A FR 3096058 B1 FR3096058 B1 FR 3096058B1
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France
Prior art keywords
deposit
reconfigurable
vapor phase
plates
zones
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Active
Application number
FR1905073A
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English (en)
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FR3096058A1 (fr
Inventor
Rémi Monna
Thibaut Desrues
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR1905073A priority Critical patent/FR3096058B1/fr
Priority to CN202080035790.0A priority patent/CN113840943A/zh
Priority to PCT/EP2020/063306 priority patent/WO2020229529A1/fr
Priority to EP20724166.2A priority patent/EP3947771A1/fr
Publication of FR3096058A1 publication Critical patent/FR3096058A1/fr
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32532Electrodes
    • H01J37/32577Electrical connecting means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32715Workpiece holder
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32733Means for moving the material to be treated
    • H01J37/32752Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761Continuous moving
    • H01J37/32779Continuous moving of batches of workpieces
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Dispositif de dépôt chimique en phase vapeur assisté par plasma sur une pluralité de substrats comportant :- une enceinte (2) configurée pour réaliser un dépôt chimique en phase vapeur assisté par plasma.- une nacelle (4) comportant n plateaux (P1, P2) superposés destinés à supporter chacun au moins un substrat, les plateaux (P1, P2) étant en un matériau conducteur électrique et étant isolés électriquement les uns des autres.- des moyens (6) d’alimentation en gaz et d’évacuation connectés à l’enceinte.- un générateur électrique (8).- un circuit de connexion électrique (10) entre le générateur électrique et les plateaux. comportant des moyens de commutation (C1, C2) de sorte que, au moins dans un état de commutation, deux plateaux adjacents ont les mêmes polarités et deux plateaux adjacents ont des polarités opposées. Figure de l’abrégé : 1.
FR1905073A 2019-05-15 2019-05-15 Dispositif de depôt chimique en phase vapeur presentant des zones de depôt reconfigurables Active FR3096058B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1905073A FR3096058B1 (fr) 2019-05-15 2019-05-15 Dispositif de depôt chimique en phase vapeur presentant des zones de depôt reconfigurables
CN202080035790.0A CN113840943A (zh) 2019-05-15 2020-05-13 具有可重置沉积区域的化学气相沉积装置
PCT/EP2020/063306 WO2020229529A1 (fr) 2019-05-15 2020-05-13 Dispositif de depôt chimique en phase vapeur presentant des zones de depôt reconfigurables
EP20724166.2A EP3947771A1 (fr) 2019-05-15 2020-05-13 Dispositif de depôt chimique en phase vapeur presentant des zones de depôt reconfigurables

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1905073 2019-05-15
FR1905073A FR3096058B1 (fr) 2019-05-15 2019-05-15 Dispositif de depôt chimique en phase vapeur presentant des zones de depôt reconfigurables

Publications (2)

Publication Number Publication Date
FR3096058A1 FR3096058A1 (fr) 2020-11-20
FR3096058B1 true FR3096058B1 (fr) 2021-06-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
FR1905073A Active FR3096058B1 (fr) 2019-05-15 2019-05-15 Dispositif de depôt chimique en phase vapeur presentant des zones de depôt reconfigurables

Country Status (4)

Country Link
EP (1) EP3947771A1 (fr)
CN (1) CN113840943A (fr)
FR (1) FR3096058B1 (fr)
WO (1) WO2020229529A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114763607A (zh) * 2021-01-14 2022-07-19 营口金辰机械股份有限公司 承托装置和等离子体增强化学气相沉积设备

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002134596A (ja) * 2000-10-25 2002-05-10 Tokyo Electron Ltd 処理装置
US20020076507A1 (en) * 2000-12-15 2002-06-20 Chiang Tony P. Process sequence for atomic layer deposition
US20070048456A1 (en) * 2004-09-14 2007-03-01 Keshner Marvin S Plasma enhanced chemical vapor deposition apparatus and method
EP1921178A1 (fr) * 2006-11-02 2008-05-14 Dow Corning Corporation Procédé de formation d'un film amorphe par résonance cyclotronique électronique
CN101245449A (zh) * 2007-02-14 2008-08-20 北京行者多媒体科技有限公司 大批量生产薄膜的等离子箱
CN101245448A (zh) * 2007-02-14 2008-08-20 北京行者多媒体科技有限公司 单室等离子箱制作薄膜硅光电转换器件的方法
CN101328581B (zh) * 2008-07-22 2010-12-01 北京北方微电子基地设备工艺研究中心有限责任公司 等离子体处理设备及其基片载板
US8715789B2 (en) * 2009-12-18 2014-05-06 Sub-One Technology, Inc. Chemical vapor deposition for an interior of a hollow article with high aspect ratio
CN101880867B (zh) * 2010-07-02 2012-12-26 北京北方微电子基地设备工艺研究中心有限责任公司 等离子体增强化学气相沉积装置
CN102485953B (zh) * 2010-12-01 2014-07-30 北京北方微电子基地设备工艺研究中心有限责任公司 托盘装置及结晶膜生长设备
EP2730677B1 (fr) * 2011-07-06 2016-09-28 Kabushiki Kaisha Kobe Seiko Sho Dispositif de formation de film sous vide
JP6356516B2 (ja) * 2014-07-22 2018-07-11 東芝メモリ株式会社 プラズマ処理装置およびプラズマ処理方法
FR3055468B1 (fr) * 2016-08-30 2018-11-16 Semco Tech Dispositif de traitement de pieces
KR102125512B1 (ko) * 2016-10-18 2020-06-23 주식회사 원익아이피에스 기판 처리 장치 및 기판 처리 방법
US10654147B2 (en) * 2017-10-17 2020-05-19 Applied Materials, Inc. Polishing of electrostatic substrate support geometries

Also Published As

Publication number Publication date
EP3947771A1 (fr) 2022-02-09
FR3096058A1 (fr) 2020-11-20
WO2020229529A1 (fr) 2020-11-19
CN113840943A (zh) 2021-12-24

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