JP6054213B2 - 支持部材及び半導体製造装置 - Google Patents
支持部材及び半導体製造装置 Download PDFInfo
- Publication number
- JP6054213B2 JP6054213B2 JP2013047514A JP2013047514A JP6054213B2 JP 6054213 B2 JP6054213 B2 JP 6054213B2 JP 2013047514 A JP2013047514 A JP 2013047514A JP 2013047514 A JP2013047514 A JP 2013047514A JP 6054213 B2 JP6054213 B2 JP 6054213B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- support member
- wall
- inner peripheral
- peripheral surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000004065 semiconductor Substances 0.000 title claims description 12
- 230000002093 peripheral effect Effects 0.000 claims description 36
- 235000012431 wafers Nutrition 0.000 description 80
- 239000007789 gas Substances 0.000 description 30
- 239000000758 substrate Substances 0.000 description 21
- 238000012545 processing Methods 0.000 description 20
- 238000010438 heat treatment Methods 0.000 description 17
- 238000000034 method Methods 0.000 description 12
- 230000008569 process Effects 0.000 description 9
- 238000010926 purge Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 5
- 210000000078 claw Anatomy 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
- H01L21/67309—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by the substrate support
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
被処理体が載置される載置部と、
前記載置部の外周縁に沿うように、その外周の一部に設けられ、前記載置部の一方の主面に載置された前記被処理体より高くなるように形成された壁と、を備え、
前記壁の内周面は、テーパー状に形成され、
前記壁は、前記載置部の他方の主面に載置された前記被処理体よりも高くなるように形成され、
前記他方の主面側に位置する前記壁の内周面は、テーパー状に形成されている、ことを特徴とする。
本発明の第1の観点にかかる支持部材と、
前記支持部材が挿入される開口部を有し、前記支持部材を保持する保持具と、
を備える、ことを特徴とする。
圧力計(群)123は、反応管2内、処理ガス導入管13内、排気管16内等の各部の圧力を測定し、その測定値を制御部100に通知する。
RAM113は、CPU115のワークエリアなどとして機能する。
バス116は、各部の間で情報を伝達する。
2 反応管
3 内管
4 外管
5 マニホールド
6 支持リング
7 蓋体
8 ボートエレベータ
9 ウエハボート
11 断熱体
12 昇温用ヒータ
13 処理ガス導入管
14 排気口
15 パージガス供給管
16 排気管
17 バルブ
18 真空ポンプ
50 支持部材
51 平板
51a 切り欠け
52,53 壁
52a 内周面
91 天板
92 底板
93 支柱
93a 爪部
94 補助柱
100 制御部
111 レシピ記憶部
112 ROM
113 RAM
114 I/Oポート
115 CPU
116 バス
121 操作パネル
122 温度センサ
123 圧力計
124 ヒータコントローラ
125 MFC制御部
126 バルブ制御部
W ウエハ
Claims (3)
- 被処理体が載置される載置部と、
前記載置部の外周縁に沿うように、その外周の一部に設けられ、前記載置部の一方の主面に載置された前記被処理体より高くなるように形成された壁と、を備え、
前記壁の内周面は、テーパー状に形成され、
前記壁は、前記載置部の他方の主面に載置された前記被処理体よりも高くなるように形成され、
前記他方の主面側に位置する前記壁の内周面は、テーパー状に形成されている、ことを特徴とする支持部材。 - 請求項1に記載の支持部材と、
前記支持部材が挿入される開口部を有し、前記支持部材を保持する保持具と、
を備える、ことを特徴とする半導体製造装置。 - 前記支持部材の壁は、前記保持具の前記開口部に位置する部分に対応する位置に形成されている、ことを特徴とする請求項2に記載の半導体製造装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013047514A JP6054213B2 (ja) | 2013-03-11 | 2013-03-11 | 支持部材及び半導体製造装置 |
TW103107702A TW201447212A (zh) | 2013-03-11 | 2014-03-06 | 支持構件及半導體製造裝置 |
KR1020140027320A KR101682274B1 (ko) | 2013-03-11 | 2014-03-07 | 지지 부재 및 반도체 제조 장치 |
US14/202,587 US20140251209A1 (en) | 2013-03-11 | 2014-03-10 | Support member and semiconductor manufacturing apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013047514A JP6054213B2 (ja) | 2013-03-11 | 2013-03-11 | 支持部材及び半導体製造装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014175510A JP2014175510A (ja) | 2014-09-22 |
JP6054213B2 true JP6054213B2 (ja) | 2016-12-27 |
Family
ID=51486228
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013047514A Active JP6054213B2 (ja) | 2013-03-11 | 2013-03-11 | 支持部材及び半導体製造装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20140251209A1 (ja) |
JP (1) | JP6054213B2 (ja) |
KR (1) | KR101682274B1 (ja) |
TW (1) | TW201447212A (ja) |
Families Citing this family (8)
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US20150376789A1 (en) * | 2014-03-11 | 2015-12-31 | Tokyo Electron Limited | Vertical heat treatment apparatus and method of operating vertical heat treatment apparatus |
JP6468901B2 (ja) | 2015-03-19 | 2019-02-13 | 東京エレクトロン株式会社 | 基板処理装置 |
US20200152496A1 (en) * | 2016-02-09 | 2020-05-14 | Entegris, Inc. | Microenvironment for flexible substrates |
CN109075069A (zh) * | 2016-02-10 | 2018-12-21 | 株式会社国际电气 | 衬底处理装置、衬底保持件及载置件 |
US11361981B2 (en) | 2018-05-02 | 2022-06-14 | Applied Materials, Inc. | Batch substrate support with warped substrate capability |
US11834743B2 (en) | 2018-09-14 | 2023-12-05 | Applied Materials, Inc. | Segmented showerhead for uniform delivery of multiple precursors |
CN110828365A (zh) * | 2019-11-19 | 2020-02-21 | 全球能源互联网研究院有限公司 | 退火组件及退火方法 |
TWI735115B (zh) * | 2019-12-24 | 2021-08-01 | 力成科技股份有限公司 | 晶圓儲存裝置及晶圓承載盤 |
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US4653636A (en) * | 1985-05-14 | 1987-03-31 | Microglass, Inc. | Wafer carrier and method |
US4926793A (en) * | 1986-12-15 | 1990-05-22 | Shin-Etsu Handotai Co., Ltd. | Method of forming thin film and apparatus therefor |
US5169453A (en) * | 1989-03-20 | 1992-12-08 | Toyoko Kagaku Co., Ltd. | Wafer supporting jig and a decompressed gas phase growth method using such a jig |
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-
2013
- 2013-03-11 JP JP2013047514A patent/JP6054213B2/ja active Active
-
2014
- 2014-03-06 TW TW103107702A patent/TW201447212A/zh unknown
- 2014-03-07 KR KR1020140027320A patent/KR101682274B1/ko active IP Right Grant
- 2014-03-10 US US14/202,587 patent/US20140251209A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
TW201447212A (zh) | 2014-12-16 |
US20140251209A1 (en) | 2014-09-11 |
KR20140111612A (ko) | 2014-09-19 |
KR101682274B1 (ko) | 2016-12-05 |
JP2014175510A (ja) | 2014-09-22 |
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