JP6028449B2 - 半導体装置、電子装置、半導体装置の製造方法 - Google Patents
半導体装置、電子装置、半導体装置の製造方法 Download PDFInfo
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- JP6028449B2 JP6028449B2 JP2012178509A JP2012178509A JP6028449B2 JP 6028449 B2 JP6028449 B2 JP 6028449B2 JP 2012178509 A JP2012178509 A JP 2012178509A JP 2012178509 A JP2012178509 A JP 2012178509A JP 6028449 B2 JP6028449 B2 JP 6028449B2
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- Prior art keywords
- semiconductor device
- intermediate region
- solder bump
- connection pad
- connection
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- 239000004065 semiconductor Substances 0.000 title claims description 136
- 238000004519 manufacturing process Methods 0.000 title claims description 29
- 229910000679 solder Inorganic materials 0.000 claims description 136
- 239000010949 copper Substances 0.000 claims description 30
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 25
- 229910020830 Sn-Bi Inorganic materials 0.000 claims description 22
- 229910018728 Sn—Bi Inorganic materials 0.000 claims description 22
- 229910052802 copper Inorganic materials 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 18
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 17
- 229910045601 alloy Inorganic materials 0.000 claims description 13
- 239000000956 alloy Substances 0.000 claims description 13
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 12
- 229910052759 nickel Inorganic materials 0.000 claims description 12
- 229910000765 intermetallic Inorganic materials 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 229910052718 tin Inorganic materials 0.000 claims description 8
- 229910052797 bismuth Inorganic materials 0.000 claims description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 claims description 5
- 229910052763 palladium Inorganic materials 0.000 claims description 5
- 229910052787 antimony Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 238000005304 joining Methods 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 239000006104 solid solution Substances 0.000 claims 2
- 238000009751 slip forming Methods 0.000 claims 1
- 238000001039 wet etching Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 51
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 5
- 229910001873 dinitrogen Inorganic materials 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 229910017482 Cu 6 Sn 5 Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
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- 238000001878 scanning electron micrograph Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
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- 229910002056 binary alloy Inorganic materials 0.000 description 2
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- 239000011229 interlayer Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
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- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910017944 Ag—Cu Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910017755 Cu-Sn Inorganic materials 0.000 description 1
- 229910017927 Cu—Sn Inorganic materials 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
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- 238000005516 engineering process Methods 0.000 description 1
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- 239000000155 melt Substances 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
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- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- CHKVPAROMQMJNQ-UHFFFAOYSA-M potassium bisulfate Chemical compound [K+].OS([O-])(=O)=O CHKVPAROMQMJNQ-UHFFFAOYSA-M 0.000 description 1
- 229910000343 potassium bisulfate Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
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- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
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- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
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- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
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- Wire Bonding (AREA)
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- Electric Connection Of Electric Components To Printed Circuits (AREA)
Description
図1Aは、第1の実施形態による半導体装置20の構成を示す平面図、図1Bは図1A中、線A−A'に沿った断面図を示す。
半導体チップ21の回路形成面21Aに前記電極パッド21aを、パラジウム(Pd)膜の電解メッキにより3〜4μmの膜厚で形成し、また前記回路基板11の実装面11Aに前記電極パッド11aを、やはりパラジウム膜の電解メッキにより3〜4μmの膜厚で形成した。さらに前記電極パッド21aおよび11aの表面にフラックスを塗布した後、前記はんだバンプ31Aaとして、Bi組成が40重量%〜70重量%で略共晶点組成を有するSn−Bi系のはんだを使い、前記図3Aの工程に対応して前記はんだバンプ31Aを窒素ガス雰囲気中、139℃の温度でリフローさせることにより、前記半導体チップ21を回路基板11上に実装した。
なお本実施形態において、必要に応じて通電の際の電流密度をより減少させることにより、あるいは通電時間を減少させることにより、図6に示すように第2の中間領域31dとして、初期組成よりもSn濃度が高いSn−Bi合金層を形成することも可能である。
[第2の実施形態]
以下、第2の実施形態による前記半導体装置20の製造方法を、図7A〜図7D,図8A〜図8D,図9A,図9B,図10A,図10Bおよび図11A〜図11Dを参照しながら説明する。
[第3の実施形態]
図10は、第3の実施形態による半導体装置40の概要を示す断面図である。
[第4の実施形態]
図11は、第4の実施形態による半導体装置60の構成を示す断面図である。
[第5の実施形態]
以上に説明した様々な実施形態による半導体装置は、例えば図12に示したような、システム基板71を有するサーバ70などの、いわゆるハイエンド用途の電子装置から携帯電話などの普及用途の電子装置への応用など、様々な用途に適用が可能である。
以上、本発明を好ましい実施形態について説明したが、本発明はかかる特定の実施形態に限定されるものではなく、特許請求の範囲に記載した要旨内において様々な変形・変更が可能である。
11A 実装面
11B 裏面
11C,61t 貫通ビアプラグ
11D,31A,31Aa,41a,61b はんだバンプ
11a,11d,21a 電極パッド
11b 配線パタ―ン
11s,21s シード層
20,40,60 半導体装置
21 半導体チップ
21A 回路形成面
31a,31b 界面層
31c 第1の中間領域
31d 第2の中間領域
35 直流電圧源
37 エッチング液
41 パッケージ基板
41A,41B,61A,61B 主面
42 インターポーザ
42Ckt 回路パターン
431A はんだバンプアレイ
62A,62B ボンディングワイヤ
63 封止樹脂
70 サーバ
71 システム基板
72 回路配線基板
73 デジタルカメラ
R1,R2,R3 レジスト膜
R1A,R2A レジスト開口部
R3A レジストパターン
Claims (20)
- 実装面上に第1の接続パッドを有する第1の接続部材と、
半導体集積回路が形成された回路形成面を有し、前記第1の接続部材上に前記回路形成面を前記実装面に対向させて実装され、前記回路形成面に第2の接続パッドを有する少なくとも一つの半導体チップと、
前記少なくとも一つの半導体チップにおいて、前記第1の接続パッドを前記第2の接続パッドに接続する、BiとSnを含む金属よりなるはんだバンプと、
を備え、
前記はんだバンプは、前記第1の接続パッドおよび前記第2の接続パッドの一方に隣接して形成された第1の界面層と、前記第1の接続パッドおよび前記第2の接続パッドの他方に隣接して形成された第2の界面層と、前記第1の界面層に隣接して形成された第1の中間領域と、前記第1の中間領域および前記第2の界面層に隣接して形成された第2の中間領域とを含み、
前記第1の中間領域においてはBiの濃度がSnの濃度よりも高く、
前記第2の中間領域においてはSnの濃度がBiの濃度よりも高いことを特徴とする半導体装置。 - 前記第1の中間領域は実質的にSnを含まず、前記第2の中間領域は実質的にBiを含まないことを特徴とする請求項1記載の半導体装置。
- 前記第1の中間領域は実質的にSnを含まず、前記第2の中間領域はSnとBiの合金よりなることを特徴とする請求項1記載の半導体装置。
- 前記第2の中間領域はSnと、前記第2の界面層に隣接している前記第1および第2の接続パッドのうちの一方を構成する金属元素との金属間化合物あるいは固溶体を含むことを特徴とする請求項1〜3のうち、いずれか一項記載の半導体装置。
- 前記金属元素は、銅,ニッケル、アンチモン、パラジウム、銀、金、白金およびコバルトよりなる群から選択されることを特徴とする請求項4記載の半導体装置。
- 前記第1の中間領域においてはBiの濃度が85重量%を超えることを特徴とする請求項1記載の半導体装置。
- 前記第1の接続部材は、別の半導体チップであることを特徴とする請求項1〜6のうち、いずれか一項記載の半導体装置。
- 前記第1の接続部材は前記実装面を構成する第1の主面と、前記第1の主面に対向する第2の主面と、前記第2の主面に形成され、前記第1の接続パッドに電気的に接続された電極パッドと、を有するインターポーザであることを特徴とする請求項1〜6のうち、いずれか一項記載の半導体装置。
- さらに配線基板を含み、前記半導体装置は前記配線基板の主面上に、前記電極パッド上に形成された第2のはんだバンプを介して実装されることを特徴とする請求項8記載の半導体装置。
- システム基板と、
前記システム基板上にフリップチップ実装された、請求項1〜9のいずれか一項に記載した半導体装置と、
を含むことを特徴とする電子装置。 - 第1の接続部材の第1の主面に第1の接続パッドを形成する工程と、
半導体集積回路が形成された半導体チップの回路形成面に、第2の接続パッドを形成する工程と、
前記第1の接続部材の上に前記半導体チップを、前記回路形成面が前記第1の主面に対向するように、また前記第1の接続パッドが前記第2の接続パッドに、Sn−Bi合金よりなるはんだバンプを介してコンタクトするように載置する工程と、
前記はんだバンプをリフローさせ、前記第1の接続パッドと前記第2の接続パッドとを接合する接合工程と、
前記接合工程の後、前記第1および第2の接続パッドの一方をアノード、他方をカソードとして、前記アノードから前記カソードへと直流電流を通電し、前記はんだバンプ中のBiを前記アノードの側に濃集させ、前記はんだバンプ中のSnを前記カソードの側に濃集させる工程と、
を含むことを特徴とする半導体装置の製造方法。 - 前記直流電流の通電は、前記はんだバンプを加熱しながら実行されることを特徴とする請求項11記載の半導体装置の製造方法。
- 前記直流電流の通電は、100℃以上で前記はんだバンプが溶融しない温度で実行されることを特徴とする請求項11または12記載の半導体装置の製造方法。
- 前記直流電流の通電は、1.0×108Am-2〜2.0×108Am-2の範囲の電流密度で実行されることを特徴とする請求項11〜13のうち、いずれか一項記載の半導体装置の製造方法。
- 前記直流電流の通電は、前記アノードの側に実質的にSnを含まない第1の中間領域が形成され、前記カソードの側に実質的にBiを含まない第2の中間領域が形成されるように、電流密度および時間を設定して実行されることを特徴とする請求項11〜14のうち、いずれか一項記載の半導体装置の製造方法。
- 前記直流電流の通電は、前記アノードの側に実質的にSnを含まない第1の中間領域が形成され、前記カソードの側にSnとBiを含む第2の中間領域が形成されるように、電流密度および時間を設定して実行されることを特徴とする請求項11〜14のうち、いずれか一項記載の半導体装置の製造方法。
- 前記第1の接続パッドを形成する工程は、前記第1の主面上において前記第1の接続パッドへの第1の通電路となる第1の金属膜を、前記第1の接続パッドに連続して形成する工程を含み、前記第2の接続パッドを形成する工程は、前記回路形成面上において前記第2の接続パッドへの第2の通電路となる第2の金属膜を、前記第2の接続パッドに連続して形成する工程を含み、前記直流電流の通電は、前記第1の通電路および第2の通電路を介して実行されることを特徴とする請求項11〜16のうち、いずれか一項記載の半導体装置の製造方法。
- さらに前記直流電流の通電の後、前記第1の金属膜と前記第2の金属膜とを、ウェットエッチングにより除去する工程を含むことを特徴とする請求項17記載の半導体装置の製造方法。
- 前記直流電流を通電する工程では、前記第1および第2の接続パッドの材料が前記はんだバンプ中に拡散により移動し、スズと金属間化合物相をあるいは固溶体を形成することを特徴とする請求項11〜18のうち、いずれか一項記載の半導体装置の製造方法。
- 前記材料は、銅、ニッケル、アンチモン、パラジウム、銀、金、白金、コバルトから選択されることを特徴とする請求項19記載の半導体装置の製造方法。
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