JP6012841B2 - SiCエピタキシャルウエハの製造方法 - Google Patents
SiCエピタキシャルウエハの製造方法 Download PDFInfo
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- JP6012841B2 JP6012841B2 JP2015500006A JP2015500006A JP6012841B2 JP 6012841 B2 JP6012841 B2 JP 6012841B2 JP 2015500006 A JP2015500006 A JP 2015500006A JP 2015500006 A JP2015500006 A JP 2015500006A JP 6012841 B2 JP6012841 B2 JP 6012841B2
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
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- H01L21/02447—Silicon carbide
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02529—Silicon carbide
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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Description
まず、この発明の実施の形態1における炭化珪素エピタキシャル成長の工程を説明する。図1は、実施の形態1における炭化珪素エピタキシャル成長の工程を示すフロー図である。本実施の形態では、SiCバルク基板の主面を4°のオフ角仕様が付いた4H−SiC(0001)面とし、その上にSiCエピタキシャル成長を行う。
Claims (7)
- 5°未満のオフ角が付いた4H−SiC(0001)を主面とするSiCバルク基板上に、SiH 4 を含むSi供給ガスとC 3 H 8 を含むC供給ガスを供給し、1480℃以上1530℃以下である第1の温度で第1のエピタキシャル成長を行う第1の工程と、
前記Si供給ガスと前記C供給ガスの供給を停止し、前記SiCバルク基板を、前記第1の温度から前記第1の温度より高い第2の温度に昇温する第2の工程と、
前記第2の工程で昇温された前記SiCバルク基板上に前記Si供給ガスと前記C供給ガスを供給し、前記第2の温度で第2のエピタキシャル成長を行う第3の工程と、
を備えたSiCエピタキシャルウエハの製造方法。 - 前記第2の工程を、還元性ガス雰囲気中で行うこと
を特徴とする請求項1に記載のSiCエピタキシャルウエハの製造方法。 - 前記第2の工程を、塩素系ガスが添加された還元性ガス雰囲気中で行うこと
を特徴とする請求項1に記載のSiCエピタキシャルウエハの製造方法。 - 前記第2の温度が1630℃以上であること
を特徴とする請求項1乃至3のいずれか1項に記載のSiCエピタキシャルウエハの製造方法。 - 前記第1の工程は、さらにN型ドーピングガスが供給されること
を特徴とする請求項1乃至4のいずれか1項に記載のSiCエピタキシャルウエハの製造方法。 - 前記第3の工程は、さらにN型ドーピングガスが供給されること
を特徴とする請求項1乃至5のいずれか1項に記載のSiCエピタキシャルウエハの製造方法。 - 前記SiCバルク基板は、前記4H−SiC(0001)から、<11−20>方向、<−1−120>方向、及び<1−100>方向のいずれかの方向に前記5°未満のオフ角が付いた基板であること
を特徴とする請求項1乃至6のいずれか1項に記載のSiCエピタキシャルウエハの製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013025800 | 2013-02-13 | ||
JP2013025800 | 2013-02-13 | ||
PCT/JP2013/007619 WO2014125550A1 (ja) | 2013-02-13 | 2013-12-26 | SiCエピタキシャルウエハの製造方法 |
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Publication Number | Publication Date |
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JP6012841B2 true JP6012841B2 (ja) | 2016-10-25 |
JPWO2014125550A1 JPWO2014125550A1 (ja) | 2017-02-02 |
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JP2015500006A Active JP6012841B2 (ja) | 2013-02-13 | 2013-12-26 | SiCエピタキシャルウエハの製造方法 |
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US (1) | US9988738B2 (ja) |
JP (1) | JP6012841B2 (ja) |
CN (1) | CN104995718B (ja) |
DE (1) | DE112013006661B4 (ja) |
WO (1) | WO2014125550A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11948794B2 (en) | 2020-07-21 | 2024-04-02 | Mitsubishi Electric Corporation | Method of manufacturing silicon carbide epitaxial wafer |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE112015004520T5 (de) * | 2014-10-01 | 2017-06-14 | Sumitomo Electric Industries, Ltd. | Siliziumkarbid-Epitaxiesubstrat |
DE112016000120T5 (de) | 2015-04-17 | 2017-07-06 | Fuji Electric Co., Ltd. | Halbleiterherstellungsverfahren und SiC-Substrat |
US10626520B2 (en) | 2015-07-29 | 2020-04-21 | Showa Denko K.K. | Method for producing epitaxial silicon carbide single crystal wafer |
JP6672962B2 (ja) * | 2016-03-31 | 2020-03-25 | 住友電気工業株式会社 | 炭化珪素半導体基板および半導体装置の製造方法 |
JP6796407B2 (ja) * | 2016-06-27 | 2020-12-09 | 昭和電工株式会社 | SiCエピタキシャルウェハの製造方法 |
JP6832240B2 (ja) * | 2017-05-26 | 2021-02-24 | 昭和電工株式会社 | SiCエピタキシャルウェハ及びその製造方法 |
JP6988216B2 (ja) * | 2017-07-12 | 2022-01-05 | 富士電機株式会社 | 半導体装置の製造方法 |
US11107677B2 (en) * | 2018-05-23 | 2021-08-31 | Mitsubishi Electric Corporation | Method for manufacturing SiC epitaxial substrate |
CN109680260A (zh) * | 2018-08-20 | 2019-04-26 | 孙月静 | 一种基于CVD法制备sic的工艺 |
EP3879011A4 (en) * | 2018-11-05 | 2022-07-20 | Kwansei Gakuin Educational Foundation | SIC SEMICONDUCTOR SUBSTRATE, METHOD AND DEVICE FOR MAKING IT |
KR102276450B1 (ko) * | 2019-10-29 | 2021-07-12 | 에스케이씨 주식회사 | 탄화규소 잉곳의 제조방법, 탄화규소 웨이퍼의 제조방법 및 이의 성장 시스템 |
Citations (5)
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JP2006032655A (ja) * | 2004-07-16 | 2006-02-02 | Kyoto Univ | 炭化珪素基板の製造方法 |
JP2007131504A (ja) * | 2005-11-14 | 2007-05-31 | Shikusuon:Kk | SiCエピタキシャルウエーハおよびそれを用いた半導体デバイス |
JP2007284298A (ja) * | 2006-04-18 | 2007-11-01 | Nippon Steel Corp | エピタキシャル炭化珪素単結晶基板及びその製造方法 |
WO2010101016A1 (ja) * | 2009-03-05 | 2010-09-10 | 三菱電機株式会社 | 炭化珪素半導体装置の製造方法 |
JP2011121847A (ja) * | 2009-12-14 | 2011-06-23 | Showa Denko Kk | SiCエピタキシャルウェハ及びその製造方法 |
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JP4511378B2 (ja) * | 2005-02-15 | 2010-07-28 | エア・ウォーター株式会社 | SOI基板を用いた単結晶SiC層を形成する方法 |
JP2009218575A (ja) | 2008-02-12 | 2009-09-24 | Toyota Motor Corp | 半導体基板の製造方法 |
US20110278596A1 (en) * | 2009-01-30 | 2011-11-17 | Takashi Aigo | Epitaxial silicon carbide monocrystalline substrate and method of production of same |
DE112011101625B4 (de) * | 2010-05-10 | 2016-03-10 | Mitsubishi Electric Corporation | Epitaktische Siliciumcarbid-Wafer und Herstellungsverfahren für diese, Siliciumcarbid-Massensubstrat für epitaktisches Wachstum und Herstellungsverfahren für dieses |
US8927396B2 (en) * | 2010-11-17 | 2015-01-06 | Nippon Steel & Sumitomo Metal Corporation | Production process of epitaxial silicon carbide single crystal substrate |
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2013
- 2013-12-26 US US14/762,652 patent/US9988738B2/en active Active
- 2013-12-26 JP JP2015500006A patent/JP6012841B2/ja active Active
- 2013-12-26 DE DE112013006661.0T patent/DE112013006661B4/de active Active
- 2013-12-26 CN CN201380072880.7A patent/CN104995718B/zh active Active
- 2013-12-26 WO PCT/JP2013/007619 patent/WO2014125550A1/ja active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006032655A (ja) * | 2004-07-16 | 2006-02-02 | Kyoto Univ | 炭化珪素基板の製造方法 |
JP2007131504A (ja) * | 2005-11-14 | 2007-05-31 | Shikusuon:Kk | SiCエピタキシャルウエーハおよびそれを用いた半導体デバイス |
JP2007284298A (ja) * | 2006-04-18 | 2007-11-01 | Nippon Steel Corp | エピタキシャル炭化珪素単結晶基板及びその製造方法 |
WO2010101016A1 (ja) * | 2009-03-05 | 2010-09-10 | 三菱電機株式会社 | 炭化珪素半導体装置の製造方法 |
JP2011121847A (ja) * | 2009-12-14 | 2011-06-23 | Showa Denko Kk | SiCエピタキシャルウェハ及びその製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11948794B2 (en) | 2020-07-21 | 2024-04-02 | Mitsubishi Electric Corporation | Method of manufacturing silicon carbide epitaxial wafer |
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Publication number | Publication date |
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DE112013006661T5 (de) | 2015-11-26 |
DE112013006661B4 (de) | 2023-01-19 |
US20150354090A1 (en) | 2015-12-10 |
CN104995718A (zh) | 2015-10-21 |
JPWO2014125550A1 (ja) | 2017-02-02 |
WO2014125550A1 (ja) | 2014-08-21 |
CN104995718B (zh) | 2018-06-15 |
US9988738B2 (en) | 2018-06-05 |
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