JP5981426B2 - 配向されたナノワイヤー成長用のバッファ層を有する基板 - Google Patents
配向されたナノワイヤー成長用のバッファ層を有する基板 Download PDFInfo
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- JP5981426B2 JP5981426B2 JP2013516546A JP2013516546A JP5981426B2 JP 5981426 B2 JP5981426 B2 JP 5981426B2 JP 2013516546 A JP2013516546 A JP 2013516546A JP 2013516546 A JP2013516546 A JP 2013516546A JP 5981426 B2 JP5981426 B2 JP 5981426B2
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- 239000002070 nanowire Substances 0.000 title claims description 113
- 239000000872 buffer Substances 0.000 title claims description 98
- 239000000758 substrate Substances 0.000 title claims description 98
- 238000000034 method Methods 0.000 claims description 36
- 239000000463 material Substances 0.000 claims description 34
- 238000000151 deposition Methods 0.000 claims description 15
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 12
- 230000007547 defect Effects 0.000 claims description 10
- 229910052799 carbon Inorganic materials 0.000 claims description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 7
- 239000002086 nanomaterial Substances 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 229910021389 graphene Inorganic materials 0.000 claims description 4
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 2
- 239000002023 wood Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 137
- 239000013078 crystal Substances 0.000 description 26
- 239000004065 semiconductor Substances 0.000 description 21
- 150000004767 nitrides Chemical class 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 11
- 239000000203 mixture Substances 0.000 description 9
- 230000006911 nucleation Effects 0.000 description 8
- 238000010899 nucleation Methods 0.000 description 8
- 230000008901 benefit Effects 0.000 description 7
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- 238000000407 epitaxy Methods 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910003481 amorphous carbon Inorganic materials 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000011258 core-shell material Substances 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000012556 adjustment buffer Substances 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002739 metals Chemical group 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 229910052950 sphalerite Inorganic materials 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
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- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- B82—NANOTECHNOLOGY
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- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
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Description
バルク層3を準備するステップと、
バルク層3上に2μm未満の厚さのバッファ層4を堆積するステップと、
バッファ層4上に1つまたは複数のナノワイヤー2を成長させるステップとを含む。
B=K*D2/8
式中、
Rは、ウェーハの曲率半径であり、
Dは、基板の直径である(例えば、2、4または6インチ)。
Claims (13)
- バルク層(3)およびバッファ層(4)を有する基板(1)であって、前記バッファ層(4)が、前記バッファ層(4)の表面(5)上に1つの同じ方向に配向された多数のナノワイヤー(2)を成長させるために前記バルク層(3)上に配置され、前記バッファ層(4)が、2μm未満の厚さを有し、前記バッファ層(4)が、AlN、TiN、グラフェン、多結晶のカーボンから選択される多結晶材料層を有し、前記基板(1)が、前記バッファ層(4)の前記表面上に成長させられた1つまたは複数のナノワイヤー(2)を備えることを特徴とする基板(1)。
- 前記バッファ層(4)が、0.2〜2μmの厚さを有し、前記1つまたは複数のナノワイヤー(2)が、100nm未満の直径を有することを特徴とする請求項1に記載の基板(1)。
- 前記バッファ層(4)が、複数の副層(4a、4b、4c)を含むことを特徴とする請求項1または2に記載の基板(1)。
- 前記バッファ層(4)もしくは前記副層(4a、4b、4c)の1つまたは複数が、放射光用のリフレクタとして機能し、または、前記基板が、複数の副層によって形成される複数の積層されたブラッグリフレクタを備え、各ブラッグリフレクタが別々の発光波長を反射する、ことを特徴とする請求項3に記載の基板(1)。
- 前記バッファ層(4)もしくは前記副層(4a、4b、4c)の1つまたは複数が、1010/cm2より高い欠陥または転位密度を有することを特徴とする請求項3又は4に記載の基板(1)。
- 前記バルク層(3)が、Si(100)またはSi(111)であることを特徴とする請求項1から5のいずれか1項に記載の基板(1)。
- 前記バッファ層(4)または少なくとも最も外側の副層(4c)が、前記バルク層(3)とは異なる配向を有するか、または、前記バッファ層(4)もしくは前記副層が、前記バルク層(3)の配向を維持することを特徴とする請求項3から6のいずれか1項に記載の基板(1)。
- 50km−1未満のウェーハ曲率を示すことを特徴とする請求項1から7のいずれか1項に記載の基板(1)。
- 請求項1から8のいずれか1項に記載の基板および前記バッファ層(4)の前記表面(5)上に成長させられた1つまたは複数のナノワイヤ(2)を備えることを特徴とする構造。
- 前記構造が、前記バッファ層(4)、または1つまたは複数の副層(4a、4b、4c)のうちの少なくとも1つによって形成される、共通の横方向コンタクトによって電気的に接続される複数のナノワイヤ(1)を含むことを特徴とする請求項9に記載の構造。
- 請求項9又は10に記載の構造を有するナノワイヤーLED構造であって、
各ナノ構造(2)が、使用に際して光を発生させるための活性領域の形成に寄与し、
各ナノ構造が、ナノワイヤーコアおよびシェルを含み、前記コアのみが、シェルが設けられるナノワイヤーなどのナノ構造を構成し、
前記ナノ構造が、複数のファセットを含み、
前記シェルが、ピラミッドファセットおよび/または垂直側壁ファセットを示し、
個別のデバイスそれぞれが、頂部または先端部でより狭く底部でより広いピラミッド形状と先端部および底部がほぼ同一の幅である柱状形状との範囲にある形状から選択される形状を有し、
個別のデバイスそれぞれが、前記デバイスの長軸に垂直な円形、六角形または他の多角形の断面を有し、
個別のデバイスそれぞれの前記底部の幅が、100nmから最大5μmの範囲にあり、高さが、数100nmから10μmの範囲にあることを特徴とするナノワイヤーLED構造。 - 同一方向に配向された多数のナノワイヤーを備える構造を形成するための方法(1)であって、前記方法が、
バルク層(3)を準備するステップと、
前記バルク層(3)上に2μm未満の厚さを有する多結晶のバッファ層(4)を堆積するステップと、
前記バッファ層(4)上に1つまたは複数のナノワイヤー(2)を成長させるステップとを含み、
前記多結晶のバッファ層(4)は、AlN、TiN、グラフェン、多結晶のカーボンから選択されることを特徴とする方法。 - 前記バッファ層が、非エピタキシャル材料を使用して成長させられ、
前記バッファ層の成長において使用される前記非エピタキシャル材料が、成長温度に耐えることができる材料、デバイスの熱的特性を改善する配向特性を有する材料の中から選択されることを特徴とする請求項12に記載の方法。
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Families Citing this family (50)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB201021112D0 (en) | 2010-12-13 | 2011-01-26 | Ntnu Technology Transfer As | Nanowires |
US9202945B2 (en) * | 2011-12-23 | 2015-12-01 | Nokia Technologies Oy | Graphene-based MIM diode and associated methods |
GB201200355D0 (en) * | 2012-01-10 | 2012-02-22 | Norwegian Univ Sci & Tech Ntnu | Nanowires |
CN103374751B (zh) * | 2012-04-25 | 2016-06-15 | 清华大学 | 具有微构造的外延结构体的制备方法 |
GB201211038D0 (en) | 2012-06-21 | 2012-08-01 | Norwegian Univ Sci & Tech Ntnu | Solar cells |
DE102012109594A1 (de) | 2012-10-09 | 2014-04-10 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil |
WO2014066379A1 (en) | 2012-10-26 | 2014-05-01 | Glo Ab | Nanowire sized opto-electronic structure and method for modifying selected portions of same |
FR2997557B1 (fr) | 2012-10-26 | 2016-01-01 | Commissariat Energie Atomique | Dispositif electronique a nanofil(s) muni d'une couche tampon en metal de transition, procede de croissance d'au moins un nanofil, et procede de fabrication d'un dispositif |
EP2912698B1 (en) | 2012-10-26 | 2018-04-04 | Glo Ab | Nanowire sized opto-electronic structure and method for modifying selected portions of same |
US9076945B2 (en) | 2012-10-26 | 2015-07-07 | Glo Ab | Nanowire LED structure and method for manufacturing the same |
FR2997420B1 (fr) | 2012-10-26 | 2017-02-24 | Commissariat Energie Atomique | Procede de croissance d'au moins un nanofil a partir d'une couche d'un metal de transition nitrure obtenue en deux etapes |
KR101603207B1 (ko) * | 2013-01-29 | 2016-03-14 | 삼성전자주식회사 | 나노구조 반도체 발광소자 제조방법 |
DE102013009824A1 (de) * | 2013-06-11 | 2014-12-11 | Forschungsverbund Berlin E.V. | Halbleitervorrichtung mit Nanosäulen aus Gruppe III-Nitridmaterial und Herstellungsverfahren für eine solche Halbleitervorrichtung |
US9224914B2 (en) | 2013-06-18 | 2015-12-29 | Glo Ab | Insulating layer for planarization and definition of the active region of a nanowire device |
FR3007574B1 (fr) | 2013-06-21 | 2015-07-17 | Commissariat Energie Atomique | Procede de fabrication d'une structure semiconductrice et composant semiconducteur comportant une telle structure semiconductrice |
GB201311101D0 (en) | 2013-06-21 | 2013-08-07 | Norwegian Univ Sci & Tech Ntnu | Semiconducting Films |
US9142745B2 (en) | 2013-08-27 | 2015-09-22 | Glo Ab | Packaged LED device with castellations |
US8999737B2 (en) | 2013-08-27 | 2015-04-07 | Glo Ab | Method of making molded LED package |
TW201517323A (zh) | 2013-08-27 | 2015-05-01 | Glo Ab | 模製發光二極體封裝及其製造方法 |
US9972750B2 (en) | 2013-12-13 | 2018-05-15 | Glo Ab | Use of dielectric film to reduce resistivity of transparent conductive oxide in nanowire LEDs |
WO2015095049A1 (en) * | 2013-12-17 | 2015-06-25 | Glo Ab | Iii-nitride nanowire led with strain modified surface active region and method of making thereof |
KR102285786B1 (ko) | 2014-01-20 | 2021-08-04 | 삼성전자 주식회사 | 반도체 발광 소자 |
FR3020177B1 (fr) * | 2014-04-22 | 2016-05-13 | Commissariat Energie Atomique | Dispositif optoelectronique a rendement d'extraction lumineuse ameliore |
KR102198694B1 (ko) | 2014-07-11 | 2021-01-06 | 삼성전자주식회사 | 반도체 발광소자 및 반도체 발광소자 제조방법 |
KR102188494B1 (ko) * | 2014-07-21 | 2020-12-09 | 삼성전자주식회사 | 반도체 발광소자, 반도체 발광소자 제조방법 및 반도체 발광소자 패키지 제조방법 |
KR20170066319A (ko) | 2014-08-12 | 2017-06-14 | 글로 에이비 | 스트레인 수정된 표면 활성 영역을 가진 iii-질화물 나노와이어 led 및 이의 제조 방법 |
KR102164796B1 (ko) * | 2014-08-28 | 2020-10-14 | 삼성전자주식회사 | 나노구조 반도체 발광소자 |
KR102337405B1 (ko) | 2014-09-05 | 2021-12-13 | 삼성전자주식회사 | 나노구조 반도체 발광소자 |
KR102266615B1 (ko) | 2014-11-17 | 2021-06-21 | 삼성전자주식회사 | 전계 효과 트랜지스터를 포함하는 반도체 소자 및 그 제조 방법 |
KR102237149B1 (ko) * | 2014-11-18 | 2021-04-07 | 엘지이노텍 주식회사 | 발광소자 및 조명시스템 |
FR3029683B1 (fr) | 2014-12-05 | 2017-01-13 | Commissariat Energie Atomique | Dispositif electronique a element filaire s'etendant a partir d'une couche electriquement conductrice comportant du carbure de zirconium ou du carbure de hafnium |
JP6959915B2 (ja) | 2015-07-13 | 2021-11-05 | クラヨナノ エーエス | グラファイト基板上に成長させたナノワイヤ又はナノピラミッド |
DK3323152T3 (da) * | 2015-07-13 | 2021-12-20 | Crayonano As | Nanowire-/nanopyramideformede lysdioder og fotodetektorer |
AU2016302692B2 (en) | 2015-07-31 | 2019-04-18 | Crayonano As | Process for growing nanowires or nanopyramids on graphitic substrates |
EP3144957A1 (en) * | 2015-09-15 | 2017-03-22 | Technische Universität München | A method for fabricating a nanostructure |
US11322652B2 (en) * | 2015-12-14 | 2022-05-03 | Ostendo Technologies, Inc. | Methods for producing composite GaN nanocolumns and light emitting structures made from the methods |
FR3053054B1 (fr) | 2016-06-28 | 2021-04-02 | Commissariat Energie Atomique | Structure de nucleation adaptee a la croissance epitaxiale d’elements semiconducteurs tridimensionnels |
US10480719B2 (en) * | 2016-08-16 | 2019-11-19 | King Abdullah University Of Science And Technology | Ultrabroad linewidth orange-emitting nanowires LED for high CRI laser-based white lighting and gigahertz communications |
GB201701829D0 (en) * | 2017-02-03 | 2017-03-22 | Norwegian Univ Of Science And Tech (Ntnu) | Device |
GB201705755D0 (en) | 2017-04-10 | 2017-05-24 | Norwegian Univ Of Science And Tech (Ntnu) | Nanostructure |
US10418499B2 (en) | 2017-06-01 | 2019-09-17 | Glo Ab | Self-aligned nanowire-based light emitting diode subpixels for a direct view display and method of making thereof |
WO2019055271A1 (en) | 2017-09-15 | 2019-03-21 | Glo Ab | OPTICAL EXTENSION IMPROVEMENT OF LIGHT-EMITTING DIODE SUB-PIXELS |
KR20200063411A (ko) * | 2018-11-27 | 2020-06-05 | 삼성디스플레이 주식회사 | 발광 소자, 이의 제조 방법 및 발광 소자를 구비한 표시 장치 |
US11637219B2 (en) | 2019-04-12 | 2023-04-25 | Google Llc | Monolithic integration of different light emitting structures on a same substrate |
CN110190162A (zh) * | 2019-06-04 | 2019-08-30 | 深圳扑浪创新科技有限公司 | 一种led芯片的外延结构及其制备方法 |
GB201910352D0 (en) * | 2019-07-19 | 2019-09-04 | Univ Sheffield | LED Arrays |
CN110676283B (zh) * | 2019-10-16 | 2022-03-25 | 福州大学 | 一种基于纳米线的μLED显示设计方法 |
KR102221285B1 (ko) * | 2019-12-09 | 2021-03-03 | 한양대학교 산학협력단 | 이산화티타늄 나노막대의 성장방법 |
WO2022220124A1 (ja) * | 2021-04-16 | 2022-10-20 | 京セラ株式会社 | 半導体基板並びにその製造方法および製造装置、GaN系結晶体、半導体デバイス、電子機器 |
CN115842077B (zh) * | 2023-02-10 | 2023-04-28 | 江西兆驰半导体有限公司 | 发光二极管外延片及其制备方法、发光二极管 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6046465A (en) * | 1998-04-17 | 2000-04-04 | Hewlett-Packard Company | Buried reflectors for light emitters in epitaxial material and method for producing same |
JP4613373B2 (ja) * | 1999-07-19 | 2011-01-19 | ソニー株式会社 | Iii族ナイトライド化合物半導体薄膜の形成方法および半導体素子の製造方法 |
US6599564B1 (en) * | 2000-08-09 | 2003-07-29 | The Board Of Trustees Of The University Of Illinois | Substrate independent distributed bragg reflector and formation method |
US6649287B2 (en) | 2000-12-14 | 2003-11-18 | Nitronex Corporation | Gallium nitride materials and methods |
US6523188B1 (en) | 2002-01-14 | 2003-02-25 | Kiefer Pool Equipment Co. | Top for starting platform for swimming pool |
US7335908B2 (en) | 2002-07-08 | 2008-02-26 | Qunano Ab | Nanostructures and methods for manufacturing the same |
US6818061B2 (en) | 2003-04-10 | 2004-11-16 | Honeywell International, Inc. | Method for growing single crystal GaN on silicon |
JP3821232B2 (ja) * | 2003-04-15 | 2006-09-13 | 日立電線株式会社 | エピタキシャル成長用多孔質基板およびその製造方法ならびにiii族窒化物半導体基板の製造方法 |
JP2006237556A (ja) * | 2005-01-31 | 2006-09-07 | Kanagawa Acad Of Sci & Technol | GaN膜生成方法及び半導体素子並びにIII族窒化物の薄膜生成方法及びIII族窒化物の薄膜を有する半導体素子 |
US7365374B2 (en) | 2005-05-03 | 2008-04-29 | Nitronex Corporation | Gallium nitride material structures including substrates and methods associated with the same |
US20080191191A1 (en) * | 2005-06-27 | 2008-08-14 | Seoul Opto Device Co., Ltd. | Light Emitting Diode of a Nanorod Array Structure Having a Nitride-Based Multi Quantum Well |
KR100753152B1 (ko) * | 2005-08-12 | 2007-08-30 | 삼성전자주식회사 | 질화물계 발광소자 및 그 제조방법 |
CN101882657A (zh) * | 2005-10-29 | 2010-11-10 | 三星电子株式会社 | 半导体器件及其制造方法 |
US20070257264A1 (en) | 2005-11-10 | 2007-11-08 | Hersee Stephen D | CATALYST-FREE GROWTH OF GaN NANOSCALE NEEDLES AND APPLICATION IN InGaN/GaN VISIBLE LEDS |
TWI408264B (zh) * | 2005-12-15 | 2013-09-11 | Saint Gobain Cristaux & Detecteurs | 低差排密度氮化鎵(GaN)之生長方法 |
EP2112699B1 (de) | 2006-02-23 | 2020-05-06 | ALLOS Semiconductors GmbH | Nitridhalbleiter-Bauelement und Verfahren zu seiner Herstellung |
EP1991499A4 (en) | 2006-03-08 | 2013-06-26 | Qunano Ab | METHOD FOR THE METAL-FREE SYNTHESIS OF EPITAXIAL SEMICONDUCTOR NANODRONS ON SI |
MX2008011275A (es) * | 2006-03-10 | 2008-11-25 | Stc Unm | Crecimiento pulsado de nanoalambres de gan y aplicaciones en materiales y dispositivos de substrato semiconductor de nitruros del grupo iii. |
JP5345552B2 (ja) | 2007-01-12 | 2013-11-20 | クナノ アーベー | 複数の窒化物ナノワイヤとその製造方法 |
GB0702560D0 (en) * | 2007-02-09 | 2007-03-21 | Univ Bath | Production of Semiconductor devices |
CA2745269A1 (en) * | 2008-01-28 | 2009-08-06 | Amit Goyal | [100] or [110] aligned, semiconductor-based, large-area, flexible, electronic devices |
KR101515100B1 (ko) * | 2008-10-21 | 2015-04-24 | 삼성전자주식회사 | 발광 다이오드 및 그 제조 방법 |
US8097999B2 (en) * | 2009-04-27 | 2012-01-17 | University Of Seoul Industry Cooperation Foundation | Piezoelectric actuator |
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