JP5968150B2 - Wafer processing method - Google Patents
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- JP5968150B2 JP5968150B2 JP2012173440A JP2012173440A JP5968150B2 JP 5968150 B2 JP5968150 B2 JP 5968150B2 JP 2012173440 A JP2012173440 A JP 2012173440A JP 2012173440 A JP2012173440 A JP 2012173440A JP 5968150 B2 JP5968150 B2 JP 5968150B2
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- 238000003672 processing method Methods 0.000 title claims description 29
- 235000012431 wafers Nutrition 0.000 claims description 111
- 238000007689 inspection Methods 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 28
- 238000013507 mapping Methods 0.000 claims description 13
- 238000000926 separation method Methods 0.000 claims description 12
- 230000001678 irradiating effect Effects 0.000 claims description 7
- 238000012360 testing method Methods 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 238000002407 reforming Methods 0.000 claims 2
- 229910052751 metal Inorganic materials 0.000 description 17
- 239000002184 metal Substances 0.000 description 17
- 238000012545 processing Methods 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 10
- 238000003384 imaging method Methods 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910020177 SiOF Inorganic materials 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920000052 poly(p-xylylene) Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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Description
本発明は、ウエーハを個々のチップに分割するウエーハの加工方法に関する。 The present invention relates to a wafer processing method for dividing a wafer into individual chips.
近時においては、ＩＣ、ＬＳＩ等の半導体チップの処理能力を向上するために、シリコン等の半導体基板の表面にＳｉＯＦ、ＢＳＧ（ＳｉＯＢ）等の無機物系の膜やポリイミド系、パリレン系等のポリマー膜である有機物系の膜からなる低誘電率絶縁体被膜（Ｌｏｗ−ｋ膜）と回路を形成する機能膜が積層された積層体によって半導体チップを形成せしめた形態の半導体ウエーハが実用化されている。また、半導体ウエーハのストリートにテストエレメントグループ（以下、ＴＥＧと呼ぶ）と称する金属膜が積層された金属パターンを部分的に配設し、半導体ウエーハを分割する前に金属パターンを通して回路の機能をテストするように構成した半導体ウエーハも実用化されている。 Recently, in order to improve the processing capability of semiconductor chips such as IC and LSI, inorganic films such as SiOF and BSG (SiOB) and polymers such as polyimide and parylene are used on the surface of a semiconductor substrate such as silicon. A semiconductor wafer having a form in which a semiconductor chip is formed by a laminate in which a low dielectric constant insulator film (Low-k film) made of an organic film as a film and a functional film for forming a circuit is laminated has been put into practical use. Yes. In addition, a metal pattern in which a metal film called a test element group (hereinafter referred to as TEG) is partially placed on the street of a semiconductor wafer, and the function of the circuit is tested through the metal pattern before dividing the semiconductor wafer. A semiconductor wafer configured as described above has also been put into practical use.
一方、近年半導体ウエーハ等の板状の被加工物を分割する方法として、その被加工物に対して透過性を有するレーザー光線を用い、分割すべき領域の内部に集光点を合わせてレーザー光線を照射するレーザー加工方法も試みられている。このレーザー加工方法を用いた分割方法は、被加工物の一方の面側から内部に集光点を合わせて被加工物に対して透過性を有する赤外光領域のレーザー光線を照射し、被加工物の内部に分割予定ラインに沿って改質層を連続的に形成し、この改質層が形成されることによって強度が低下した分割予定ラインに沿って外力を加えることにより、被加工物を分割するものである。（例えば、特許文献１参照。） On the other hand, in recent years, as a method of dividing a plate-like workpiece such as a semiconductor wafer, a laser beam having transparency to the workpiece is used, and a laser beam is irradiated by aligning a condensing point inside an area to be divided. Laser processing methods have also been attempted. The dividing method using this laser processing method is to irradiate a laser beam in an infrared light region having a condensing point from one side of the workpiece to the inside and irradiating the workpiece with the infrared light region. A reformed layer is continuously formed along the planned division line inside the product, and an external force is applied along the planned split line whose strength has been reduced by the formation of the modified layer, thereby allowing the workpiece to be processed. To divide. (For example, refer to Patent Document 1.)
しかし、表面にＬｏｗ−Ｋ膜が形成され、分割予定ライン上にＴＥＧを有するウエーハにおいて、裏面側からウエーハに対して透過性を有するレーザー光線を照射して内部改質層を形成する際に、レーザー光線の漏れ光によりＴＥＧの金属部等の反応しやすい領域が変質し表面膜等が剥離してしまうという問題がある。そのような剥離領域はウエーハの種類毎（ＴＥＧの位置材質等）により複数ランダムな位置に存在している。 However, when a low-K film is formed on the surface and a wafer having a TEG on the planned dividing line is irradiated with a laser beam having transparency to the wafer from the back side, the laser beam is formed. There is a problem that the region that is easily reacted such as the metal part of the TEG is altered by the leaked light and the surface film is peeled off. Such peeling regions exist at a plurality of random positions depending on the type of wafer (position material of TEG, etc.).
本発明は、上記問題に鑑みなされたもので、その目的は、剥離領域を複数有するウエーハにおいて、レーザー光線を照射することによる当該領域の加工品質の悪化を防ぐことができるウエーハの加工方法を提供することである。 The present invention has been made in view of the above problems, and an object of the present invention is to provide a wafer processing method capable of preventing deterioration of the processing quality of the region caused by laser beam irradiation in a wafer having a plurality of separation regions. That is.
上述した課題を解決し、目的を達成するために、本発明のウエーハの加工方法は、表面に格子状に形成された複数の分割予定ラインによって区画された各領域にデバイスを有する複数のウエーハそれぞれを該分割予定ラインに沿って分割するウエーハの加工方法であって、表面側を保持手段で保持し、該複数のウエーハのうちの一つのウエーハの裏面からウエーハに対して透過性を有する波長のレーザー光線を該分割予定ラインに沿って照射して、該分割予定ラインに沿って該一つのウエーハの内部に改質層を形成する検査用改質層形成工程と、該検査用改質層形成工程において改質層を形成した該一つのウエーハの表面を検査手段によって該分割予定ラインに沿って観察し、該レーザー光線の漏れ光によって反応し表面膜が剥離した剥離領域を検出しＸ，Ｙ座標値を記憶し、該剥離領域のマッピングデータを取得する検査工程と、検査工程の後に、表面側を保持手段で保持し、該複数のウエーハのうちの他のウエーハの裏面からウエーハに対して透過性を有する波長のレーザー光線を、該マッピングデータをもとに該剥離領域では停止又は出力を変更させつつ該分割予定ラインに沿って照射して、該分割予定ラインに沿って少なくとも該剥離領域以外の該他のウエーハの内部に改質層を形成する改質層形成工程と、該改質層が形成された該他のウエーハに外力を付与し、該他のウエーハを該分割予定ラインに沿って分割する分割工程と、を備えることを特徴とする。 In order to solve the above-described problems and achieve the object, the wafer processing method of the present invention includes a plurality of wafers each having a device in each region partitioned by a plurality of division lines formed in a lattice pattern on the surface. Is a wafer processing method for dividing the wafer along the planned dividing line, wherein the front surface side is held by a holding means, and a wavelength of the wavelength having transparency to the wafer from the back surface of one of the plurality of wafers. A modified layer forming process for inspection that irradiates a laser beam along the planned dividing line and forms a modified layer inside the one wafer along the planned divided line, and a modified layer forming process for testing In this case, the surface of the one wafer on which the modified layer is formed is observed along the line to be divided by an inspection means, and the surface film is peeled off by reacting with the leakage light of the laser beam. Detecting the X and Y coordinate values, acquiring the mapping data of the peeling region, and holding the surface side with the holding means after the inspection step, and the other wafers of the plurality of wafers A laser beam having a wavelength that is transparent to the wafer from the back surface is irradiated along the planned division line while stopping or changing the output in the separation region based on the mapping data, and along the planned division line. A modified layer forming step of forming a modified layer inside the other wafer other than at least the separation region, and applying an external force to the other wafer on which the modified layer is formed, And a dividing step of dividing along the division planned line.
本発明のウエーハの加工方法は、レーザー光線の漏れ光によって生じる剥離領域のＸ，Ｙ座標値を事前に検査工程でマッピングデータとして取得し、マッピングデータに基づいて改質層形成工程で、当該剥離領域におけるレーザー光線の照射の停止又は出力を変更する。このために、レーザー光線を剥離領域を避けて照射できるとともに、照射する場合にもレーザー光線の出力を変更するので、剥離領域の発生を抑制することができる。したがって、他のウエーハの表面膜等の変質、剥離による加工品質の悪化を抑制することができる。 According to the wafer processing method of the present invention, the X and Y coordinate values of the separation region caused by the leakage light of the laser beam are obtained in advance as mapping data in the inspection step, and the separation region is formed in the modified layer formation step based on the mapping data. Stop or change the output of the laser beam at. For this reason, it is possible to irradiate the laser beam while avoiding the peeling region, and also to change the output of the laser beam when irradiating, it is possible to suppress the occurrence of the peeling region. Therefore, it is possible to suppress the deterioration of the processing quality due to the alteration and peeling of the surface film of other wafers.
本発明を実施するための形態（実施形態）につき、図面を参照しつつ詳細に説明する。以下の実施形態に記載した内容により本発明が限定されるものではない。また、以下に記載した構成要素には、当業者が容易に想定できるもの、実質的に同一のものが含まれる。さらに、以下に記載した構成は適宜組み合わせることが可能である。また、本発明の要旨を逸脱しない範囲で構成の種々の省略、置換又は変更を行うことができる。 DESCRIPTION OF EMBODIMENTS Embodiments (embodiments) for carrying out the present invention will be described in detail with reference to the drawings. The present invention is not limited by the contents described in the following embodiments. The constituent elements described below include those that can be easily assumed by those skilled in the art and those that are substantially the same. Furthermore, the structures described below can be combined as appropriate. Various omissions, substitutions, or changes in the configuration can be made without departing from the scope of the present invention.
〔実施形態〕
本実施形態に係るウエーハの加工方法（以下、単に加工方法と呼ぶ）を、図１から図５に基づいて説明する。図１は、実施形態に係るウエーハの加工方法の加工対象としてのウエーハを示す斜視図である。図２は、実施形態に係るウエーハの加工方法の検査用改質層形成工程の概要を示す側断面図である。図３（ａ）は、実施形態に係るウエーハの加工方法の検査用改質層形成工程後のウエーハの斜視図であり、図３（ｂ）は、図３（ａ）中のＩＩＩｂ部を拡大して示す斜視図である。図４は、実施形態に係るウエーハの加工方法の検査工程で得られた画像の概要を示す説明図である。図５（ａ）は、実施形態に係るウエーハの加工方法の改質層形成工程後のウエーハの斜視図であり、図５（ｂ）は、図５（ａ）中のＶｂ部を拡大して示す斜視図である。
Embodiment
A wafer processing method (hereinafter simply referred to as a processing method) according to this embodiment will be described with reference to FIGS. FIG. 1 is a perspective view illustrating a wafer as a processing target of a wafer processing method according to an embodiment. FIG. 2 is a side cross-sectional view showing an outline of the inspection modified layer forming step of the wafer processing method according to the embodiment. FIG. 3A is a perspective view of the wafer after the inspection modified layer forming step of the wafer processing method according to the embodiment, and FIG. 3B is an enlarged view of a portion IIIb in FIG. It is a perspective view shown. FIG. 4 is an explanatory diagram showing an outline of an image obtained in the inspection process of the wafer processing method according to the embodiment. FIG. 5A is a perspective view of the wafer after the modified layer forming step of the wafer processing method according to the embodiment, and FIG. 5B is an enlarged view of the Vb portion in FIG. It is a perspective view shown.
本実施形態に係る加工方法は、図１に示すウエーハＷを加工する加工方法であって、ウエーハＷにレーザー光線Ｌ（図２に示す）を照射して内部に改質層Ｋ（図２等に示す）を形成して個々のチップに分割する方法である。なお、本実施形態に係る加工方法により個々のチップに分割される加工対象としてのウエーハＷは、本実施形態ではシリコン、サファイア、ガリウムなどを母材とする円板状の半導体ウエーハや光デバイスウエーハである。ウエーハＷは、図１に示すように、表面ＷＳに格子状に形成された複数の分割予定ラインＳによって区画された各領域にデバイスＤを有している。 The processing method according to the present embodiment is a processing method for processing the wafer W shown in FIG. 1, and irradiates the wafer W with a laser beam L (shown in FIG. 2) to internally modify the modified layer K (see FIG. 2). This is a method of dividing into individual chips. Note that the wafer W as a processing target divided into individual chips by the processing method according to the present embodiment is a disk-shaped semiconductor wafer or optical device wafer having a base material of silicon, sapphire, gallium, or the like in this embodiment. It is. As shown in FIG. 1, the wafer W has a device D in each region partitioned by a plurality of division lines S formed in a lattice shape on the surface WS.
また、ウエーハＷの表面ＷＳには、ＳｉＯＦ、ＢＳＧ（ＳｉＯＢ）等の無機物系の膜やポリイミド系、パリレン系等のポリマー膜である有機物系の膜からなる低誘電率絶縁体被膜（Ｌｏｗ−ｋ膜）などの表面膜が積層されているとともに、分割予定ラインＳにTEGと称する金属膜が積層された金属パターンが部分的に配設されている。なお、同一ロッドの複数のウエーハＷは、前記金属パターンの位置及び形状等が同一となっているとともに、ロッドの異なるウエーハＷは、前記金属パターンの位置及び形状等が異なることが多い。 The surface WS of the wafer W has a low dielectric constant insulating film (Low-k) made of an inorganic film such as SiOF or BSG (SiOB) or an organic film such as a polyimide film or a parylene polymer film. And a metal pattern in which a metal film called TEG is laminated partially on the planned dividing line S. A plurality of wafers W of the same rod have the same position and shape of the metal pattern, and wafers W having different rods often have different positions and shapes of the metal pattern.
また、ウエーハＷは、デバイスＤが複数形成されている表面ＷＳに延性を有する粘着テープＴ（図２に示す）が貼着され、粘着テープＴに図示しない環状フレームが貼着されるなどして、各工程間を搬送される。 In addition, the wafer W has a ductile adhesive tape T (shown in FIG. 2) attached to the surface WS on which a plurality of devices D are formed, and an annular frame (not shown) attached to the adhesive tape T. , Transported between each process.
なお、改質層Ｋとは、密度、屈折率、機械的強度やその他の物理的特性が周囲のそれとは異なる状態になった領域のことを意味し、溶融処理領域、クラック領域、絶縁破壊領域、屈折率変化領域、及びこれらの領域が混在した領域等を例示できる。 The modified layer K means a region where the density, refractive index, mechanical strength and other physical characteristics are different from those of the surroundings, and includes a melt-treated region, a crack region, and a dielectric breakdown region. , A refractive index change region, a region where these regions are mixed, and the like.
本実施形態に係る加工方法は、前述した金属パターンの位置及び形状等が同一な複数のウエーハＷそれぞれを分割予定ラインＳに沿って分割する方法であって、検査用改質層形成工程と、検査工程と、改質層形成工程と、分割工程とを備える。本実施形態に係る加工方法は、まず、検査用改質層形成工程において、前述した金属パターンの位置及び形状等が同一な複数のウエーハＷのうちの一つのウエーハＷ（以下、符号ＷＡを記す）を選択し、選択した一つのウエーハＷＡの表面ＷＳ側をレーザー加工装置１のチャックテーブル２（保持手段に相当）に載置し、ウエーハＷＡの表面ＷＳ側をチャックテーブル２で吸引保持する。その後、レーザー加工装置１が、撮像手段３（図２に示し、検査手段に相当）などの取得した画像に基いて、チャックテーブル２とレーザー光線照射手段４（図２に示す）との相対位置のアライメントを遂行した後、チャックテーブル２とレーザー光線照射手段４とを相対的に移動手段により移動させながら、図２に示すように、ウエーハＷＡの裏面ＷＲからウエーハＷＡに対して透過性を有する波長（例えば、１０６４ｎｍ）のレーザー光線ＬをウエーハＷＡの内部に集光点を合わせて分割予定ラインＳに沿って照射する。そして、分割予定ラインＳに沿ってウエーハＷＡの内部に改質層Ｋを形成する。図３（ａ）に示すように、全ての分割予定ラインＳに沿ってウエーハＷＡの内部に改質層Ｋを形成すると、検査工程に進む。なお、検査用改質層形成工程では、レーザー光線Ｌの出力を一定とする。 The processing method according to the present embodiment is a method of dividing each of a plurality of wafers W having the same position, shape, etc. of the metal pattern along the scheduled division line S, and a test modification layer forming step, An inspection process, a modified layer forming process, and a dividing process are provided. In the processing method according to the present embodiment, first, in the modified layer formation process for inspection, one of the plurality of wafers W having the same position, shape, etc. of the metal pattern described above (hereinafter referred to as the symbol WA) is described. ), The surface WS side of the selected wafer WA is placed on the chuck table 2 (corresponding to the holding means) of the laser processing apparatus 1, and the surface WS side of the wafer WA is sucked and held by the chuck table 2. Thereafter, the laser processing apparatus 1 determines the relative position between the chuck table 2 and the laser beam irradiation means 4 (shown in FIG. 2) based on the acquired image of the imaging means 3 (shown in FIG. 2 and corresponding to the inspection means). After performing the alignment, as shown in FIG. 2, while the chuck table 2 and the laser beam irradiating means 4 are moved relatively by the moving means, the wavelength (see FIG. 2) is transparent to the wafer WA from the back surface WR of the wafer WA. For example, the laser beam L of 1064 nm) is irradiated along the division line S with the condensing point aligned inside the wafer WA. Then, the modified layer K is formed inside the wafer WA along the planned division line S. As shown in FIG. 3A, when the modified layer K is formed inside the wafer WA along all the planned division lines S, the process proceeds to the inspection process. In the modified layer forming process for inspection, the output of the laser beam L is constant.
検査工程では、検査用改質層形成工程において全ての分割予定ラインＳに沿って内部に改質層Ｋを形成したウエーハＷＡをチャックテーブル２から取り外す。その後、撮像手段３によって、ウエーハＷＡの表面ＷＳを分割予定ラインＳに沿って観察する。すると、検査用改質層形成工程において、一定の出力のレーザー光線Ｌにより改質層Ｋが形成されているので、撮像手段３により撮像されて得られた図４に示す画像Ｇのように、レーザー光線Ｌの漏れ光によって金属パターンが反応して、金属パターンが設けられた箇所の表面膜が剥離している。そして、レーザー加工装置１の制御手段が、図４に示す画像Ｇにパターンマッチングや２値化処理などの種々の画像処理を施して、レーザー光線Ｌの漏れ光によって反応し表面膜が剥離した剥離領域Ｒ（図３（ａ）、図３（ｂ）及び図４に示す）を検出し、該剥離領域ＲのＸ，Ｙ座標値を記憶する。なお、Ｘ座標値及びＹ座標値は、例えば、ウエーハＷＡのノッチＮなどを位置を基準として、定められる。レーザー加工装置１の制御手段は、全ての剥離領域ＲのＸ座標値及びＹ座標値を示すマッピングデータを取得して、改質層形成工程に進む。 In the inspection process, the wafer WA having the modified layer K formed therein along all the division lines S in the inspection modified layer forming process is removed from the chuck table 2. Thereafter, the surface WS of the wafer WA is observed along the planned division line S by the imaging means 3. Then, in the modified layer forming process for inspection, the modified layer K is formed by the laser beam L having a constant output, so that the laser beam as shown in the image G shown in FIG. The metal pattern reacts with the leaked light of L, and the surface film where the metal pattern is provided is peeled off. Then, the control means of the laser processing apparatus 1 performs various image processing such as pattern matching and binarization processing on the image G shown in FIG. 4 and reacts by the leakage light of the laser beam L to peel off the surface film. R (shown in FIGS. 3A, 3B, and 4) is detected, and the X and Y coordinate values of the peeling region R are stored. Note that the X coordinate value and the Y coordinate value are determined based on the position of the notch N of the wafer WA, for example. The control means of the laser processing apparatus 1 acquires mapping data indicating the X coordinate value and the Y coordinate value of all the peeling regions R, and proceeds to the modified layer forming step.
改質層形成工程では、検査工程の後に、前述した金属パターンの位置及び形状等が同一な複数のウエーハＷのうちの他のウエーハＷ（以下、符号ＷＢを記す）の表面ＷＳ側をレーザー加工装置１のチャックテーブル２に載置し、ウエーハＷＢの表面ＷＳ側をチャックテーブル２で吸引保持する。その後、レーザー加工装置１が、撮像手段３などの取得した画像に基いて、アライメントを遂行した後、チャックテーブル２とレーザー光線照射手段４とを相対的に移動手段により移動させながら、ウエーハＷＢの裏面ＷＲからウエーハＷＢに対して透過性を有する波長（例えば、１０６４ｎｍ）のレーザー光線ＬをウエーハＷＢの内部に集光点を合わせて分割予定ラインＳに沿って照射する。改質形成工程では、剥離領域Ｒのマッピングデータ及び撮像手段３がウエーハＷＢを撮像して得た画像をもとに、剥離領域Ｒではレーザー光線Ｌを停止し、剥離領域Ｒ以外では、レーザー光線Ｌの出力を一定とする。そして、分割予定ラインＳに沿って、剥離領域Ｒ以外のウエーハＷＢの内部に改質層Ｋを形成する。図５（ａ）及び図５（ｂ）に示すように、全ての分割予定ラインＳに沿って、剥離領域Ｒ以外のウエーハＷＢの内部に改質層Ｋを形成すると、分割工程に進む。 In the modified layer forming process, after the inspection process, the surface WS side of another wafer W (hereinafter referred to as a reference WB) among the plurality of wafers W having the same position, shape, etc. of the metal pattern is laser processed. It is placed on the chuck table 2 of the apparatus 1, and the surface WS side of the wafer WB is sucked and held by the chuck table 2. After that, after the laser processing apparatus 1 performs alignment based on the image acquired by the imaging means 3 or the like, the back surface of the wafer WB is moved while the chuck table 2 and the laser beam irradiation means 4 are moved relatively by the moving means. A laser beam L having a wavelength (for example, 1064 nm) having transparency with respect to the wafer WB is irradiated from the WR along the planned division line S with the converging point aligned inside the wafer WB. In the modified formation process, the laser beam L is stopped in the peeling region R based on the mapping data of the peeling region R and the image obtained by the imaging unit 3 imaging the wafer WB. Keep the output constant. Then, the modified layer K is formed inside the wafer WB other than the separation region R along the planned division line S. As shown in FIGS. 5A and 5B, when the modified layer K is formed inside the wafer WB other than the separation region R along all the division lines S, the process proceeds to the division process.
なお、検査用改質層形成工程、検査工程及び改質層形成工程で用いられるレーザー加工装置１は、図２に示すように、負圧によりウエーハＷＡ，ＷＢを吸引保持するチャックテーブル２と、ウエーハＷＡ，ＷＢの表面ＷＳ及び裏面ＷＲを撮像する撮像手段３と、ウエーハＷＡ，ＷＢの裏面ＷＲ側にレーザー光線Ｌを照射するレーザー光線照射手段４と、チャックテーブル２と撮像手段３及びレーザー光線照射手段４とを相対的に移動させる移動手段と、図示しない制御手段などを含んで構成されている。 As shown in FIG. 2, the laser processing apparatus 1 used in the inspection modified layer forming step, the inspection step, and the modified layer forming step includes a chuck table 2 that sucks and holds the wafers WA and WB by negative pressure, Imaging means 3 for imaging the front surface WS and the back surface WR of the wafers WA, WB, a laser beam irradiation means 4 for irradiating the wafer WA, WB with the laser beam L, the chuck table 2, the imaging means 3, and the laser beam irradiation means 4 And a control means (not shown).
分割工程では、改質層形成工程を実施した後、剥離領域Ｒ以外の全ての分割予定ラインＳに沿って改質層Ｋが内部に形成されたウエーハＷＢに、例えば、研削砥石などを用いて裏面ＷＲから研削加工を施し、ウエーハＷＢを仕上げ厚さへと薄化する。さらに、研削加工時の研削砥石などの研削動作により、分割予定ラインＳに沿ってウエーハＷＢに外力を付与し、ウエーハＷＢを分割予定ラインＳに沿って個々のチップに分割する。そして、個々のチップに分割されたウエーハＷＢは、裏面ＷＲ全面に図示しないＤＡＦ（Die Attach Film）が貼着されるなどして、次工程に搬送される。 In the dividing step, after performing the modified layer forming step, the wafer WB in which the modified layer K is formed along all the planned division lines S other than the separation region R is used by using, for example, a grinding wheel. Grinding is performed from the back surface WR, and the wafer WB is thinned to a finished thickness. Furthermore, an external force is applied to the wafer WB along the planned division line S by a grinding operation such as a grinding wheel during grinding, and the wafer WB is divided into individual chips along the planned division line S. Then, the wafer WB divided into individual chips is conveyed to the next process, for example, by attaching a DAF (Die Attach Film) (not shown) to the entire back surface WR.
また、本実施形態の加工方法では、前述した金属パターンの位置及び形状等が同一な複数のウエーハＷのうちの他のウエーハＷＢを個々のチップに分割する際には、前述した検査用改質層形成工程及び検査工程を実行することなく、改質層形成工程及び分割工程を実行する。要するに、本発明では、マッピングデータの更新を行なうことなく、金属パターンの位置及び形状等が同一な複数のウエーハＷを個々のチップに分割し、金属パターンの位置及び形状等が異なるウエーハＷを分割するたびに、マッピングデータの更新を行なう。さらに、前述した検査用改質層形成工程及び検査工程が実行される一つのウエーハＷＡは、改質層形成工程及び分割工程が実行されることなく、ＩＣやＬＳＩなどの半導体チップとはならない。 Further, in the processing method of the present embodiment, when the other wafers WB among the plurality of wafers W having the same position and shape of the metal pattern are divided into individual chips, the above-described inspection modification is performed. The modified layer forming step and the dividing step are executed without executing the layer forming step and the inspection step. In short, in the present invention, without updating mapping data, a plurality of wafers W having the same metal pattern position and shape are divided into individual chips, and wafers W having different metal pattern positions and shapes are divided. Each time the mapping data is updated. Further, one wafer WA on which the above-described inspection modified layer forming step and inspection step are performed does not become a semiconductor chip such as an IC or an LSI without executing the modified layer forming step and the dividing step.
以上のように、本実施形態に係る加工方法によれば、レーザー光線Ｌの漏れ光によって生じる剥離領域ＲのＸ，Ｙ座標値を事前に検査工程でマッピングデータとして取得し、マッピングデータに基づいて改質層形成工程で、当該剥離領域Ｒにおけるレーザー光線Ｌの照射の停止又は出力を変更する。このために、レーザー光線Ｌを剥離領域Ｒを避けて照射できるとともに、照射する場合にもレーザー光線Ｌの出力を変更するので、剥離領域Ｒの発生を抑制することができる。したがって、他のウエーハＷＢの表面膜等の変質、剥離による加工品質の悪化を抑制することができる。 As described above, according to the processing method according to the present embodiment, the X and Y coordinate values of the separation region R generated by the leakage light of the laser beam L are acquired in advance as mapping data in the inspection process, and are revised based on the mapping data. In the quality layer forming step, the stop or output of the irradiation of the laser beam L in the peeling region R is changed. For this reason, the laser beam L can be irradiated while avoiding the peeling region R, and the output of the laser beam L is also changed when irradiating, so that the generation of the peeling region R can be suppressed. Therefore, it is possible to suppress deterioration of the surface film or the like of other wafers WB and deterioration of processing quality due to peeling.
前述した実施形態では、分割工程では、研削加工によりウエーハＷＢを分割予定ラインＳに沿って個々のチップに分割しているが、本発明では、分割工程では、研削加工に限らず種々の加工により、分割予定ラインＳに沿ってウエーハＷに外力を付与して、ウエーハＷを分割予定ラインＳに沿って個々のチップに分割しても良い。 In the above-described embodiment, in the dividing step, the wafer WB is divided into individual chips along the scheduled division line S by grinding. However, in the present invention, the dividing step is not limited to grinding, but can be performed by various processes. Alternatively, an external force may be applied to the wafer W along the planned division line S, and the wafer W may be divided into individual chips along the planned division line S.
また、本発明では、改質層形成工程において、剥離領域Ｒにおいてレーザー光線Ｌの照射を停止することなく、金属パターンに反応させない程度又は反応度合いを弱めるように、レーザー光線Ｌの出力を剥離領域Ｒ以外に照射する場合よりも低下させるなどの出力に変更させつつ分割予定ラインＳに沿ってレーザー光線Ｌを照射しても良い。要するに、本発明では、改質層形成工程では、ウエーハＷＢの裏面ＷＲからウエーハＷＢに対して透過性を有する波長のレーザー光線Ｌを、マッピングデータをもとに剥離領域Ｒでは停止又は出力を変更させつつ分割予定ラインＳに沿って照射して、分割予定ラインＳに沿って少なくとも剥離領域Ｒ以外のウエーハＷＢの内部に改質層Ｋを形成すれば良い。 Further, in the present invention, in the modified layer forming step, the output of the laser beam L other than the peeling region R is set so as not to react with the metal pattern or weaken the reaction level without stopping the irradiation of the laser beam L in the peeling region R. The laser beam L may be irradiated along the scheduled division line S while changing to an output such as lowering than the case of irradiation. In short, in the present invention, in the modified layer forming step, the laser beam L having a wavelength that is transparent to the wafer WB from the back surface WR of the wafer WB is stopped or changed in output in the peeling region R based on the mapping data. The modified layer K may be formed inside the wafer WB other than at least the separation region R along the division line S while irradiating along the division line S.
なお、本発明は上記実施形態に限定されるものではない。即ち、本発明の骨子を逸脱しない範囲で種々変形して実施することができる。 The present invention is not limited to the above embodiment. That is, various modifications can be made without departing from the scope of the present invention.
２ チャックテーブル（保持手段）
３ 撮像手段
Ｄ デバイス
Ｋ 改質層
Ｌ レーザー光線
Ｒ 剥離領域
Ｓ 分割予定ライン
Ｗ ウエーハ
ＷＡ 一つのウエーハ
ＷＢ 他のウエーハ
ＷＳ 表面
ＷＲ 裏面
2 Chuck table (holding means)
3 imaging means D device K modified layer L laser beam R separation area S line to be divided W wafer WA one wafer WB other wafer WS surface WR back surface
Claims (1)
表面側を保持手段で保持し、該複数のウエーハのうちの一つのウエーハの裏面からウエーハに対して透過性を有する波長のレーザー光線を該分割予定ラインに沿って照射して、該分割予定ラインに沿って該一つのウエーハの内部に改質層を形成する検査用改質層形成工程と、
該検査用改質層形成工程において改質層を形成した該一つのウエーハの表面を検査手段によって該分割予定ラインに沿って観察し、該レーザー光線の漏れ光によって反応し表面膜が剥離した剥離領域を検出しＸ，Ｙ座標値を記憶し、該剥離領域のマッピングデータを取得する検査工程と、
検査工程の後に、表面側を保持手段で保持し、該複数のウエーハのうちの他のウエーハの裏面からウエーハに対して透過性を有する波長のレーザー光線を、該マッピングデータをもとに該剥離領域では停止又は出力を変更させつつ該分割予定ラインに沿って照射して、該分割予定ラインに沿って少なくとも該剥離領域以外の該他のウエーハの内部に改質層を形成する改質層形成工程と、
該改質層が形成された該他のウエーハに外力を付与し、該他のウエーハを該分割予定ラインに沿って分割する分割工程と、
を備えるウエーハの加工方法。 A wafer processing method for dividing a plurality of wafers each having a device in each region partitioned by a plurality of division lines formed in a lattice shape on the surface along the division lines,
The front surface side is held by a holding means, and a laser beam having a wavelength that is transparent to the wafer is irradiated along the planned dividing line from the back surface of one of the plurality of wafers. A test reforming layer forming step for forming a reforming layer along the inside of the one wafer,
The surface of the one wafer on which the modified layer has been formed in the step of forming the modified layer for inspection is observed along the line to be divided by the inspection means, and is a peeled area where the surface film is peeled off due to reaction by the leakage light of the laser beam Detecting X, Y coordinate values, and acquiring mapping data of the peeling region;
After the inspection process, the surface side is held by a holding means, and a laser beam having a wavelength that is transmissive to the wafer from the back side of the other wafer among the plurality of wafers is applied to the peeling region based on the mapping data. Then, a modified layer forming step of irradiating along the planned division line while changing the stop or output, and forming a modified layer at least inside the other wafer other than the separation region along the planned division line When,
A dividing step of applying an external force to the other wafer on which the modified layer is formed, and dividing the other wafer along the line to be divided;
A wafer processing method comprising:
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