JP5946209B2 - Laser annealing equipment with sheet resistivity measurement mechanism - Google Patents

Laser annealing equipment with sheet resistivity measurement mechanism Download PDF

Info

Publication number
JP5946209B2
JP5946209B2 JP2012106624A JP2012106624A JP5946209B2 JP 5946209 B2 JP5946209 B2 JP 5946209B2 JP 2012106624 A JP2012106624 A JP 2012106624A JP 2012106624 A JP2012106624 A JP 2012106624A JP 5946209 B2 JP5946209 B2 JP 5946209B2
Authority
JP
Japan
Prior art keywords
sheet resistivity
laser annealing
annealing apparatus
silicon substrate
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2012106624A
Other languages
Japanese (ja)
Other versions
JP2013235915A (en
Inventor
金沢　正仁
正仁 金沢
森田　進
進 森田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Steel Works Ltd
Original Assignee
Japan Steel Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Steel Works Ltd filed Critical Japan Steel Works Ltd
Priority to JP2012106624A priority Critical patent/JP5946209B2/en
Publication of JP2013235915A publication Critical patent/JP2013235915A/en
Application granted granted Critical
Publication of JP5946209B2 publication Critical patent/JP5946209B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Description

本発明は、シート抵抗率計測機構付きレーザアニール装置に関し、さらに詳しくは、正しい測定結果を迅速に取得できると共に無駄なテスト実施を回避することが出来るシート抵抗率計測機構付きレーザアニール装置に関する。   The present invention relates to a laser annealing apparatus with a sheet resistivity measuring mechanism, and more particularly, to a laser annealing apparatus with a sheet resistivity measuring mechanism that can obtain a correct measurement result quickly and avoid unnecessary testing.

従来、長方形状のレーザ照射スポットにより被処理体の表面を走査するレーザアニール装置が知られている（例えば、特許文献１参照。）。
また、プローブの探針をシリコンウェーハの表面に一定の荷重量で接触させてシート抵抗率を計測する半導体ウェーハ抵抗率測定装置が知られている（例えば、特許文献２参照。）。 Conventionally, a laser annealing apparatus that scans the surface of an object to be processed with a rectangular laser irradiation spot is known (see, for example, Patent Document 1).
There is also known a semiconductor wafer resistivity measuring apparatus that measures the sheet resistivity by bringing the probe tip into contact with the surface of a silicon wafer with a constant load (see, for example, Patent Document 2).

特許第３５０２９８１号公報Japanese Patent No. 3502981 特開２０１０−２２５９２０号公報JP 2010-225920 A

従来、上記特許文献１に記載の如きレーザアニール装置でテスト用シリコン基板のレーザアニール処理を行った後、そのテスト用シリコン基板を上記特許文献２に記載の如き半導体ウェーハ抵抗率測定装置に移してシート抵抗率を測定し、その測定結果から適正なレーザアニール処理条件を求め、その求めたレーザアニール処理条件で製品用シリコン基板のレーザアニール処理を行っていた。
しかし、レーザアニール処理を行ったテスト用シリコン基板をレーザアニール装置から半導体ウェーハ抵抗率測定装置に移してシート抵抗率を測定しているため、次のような問題点があった。
（１）テスト用シリコン基板をレーザアニール装置から取り出して搬送する時に外気や搬送装置で表面が汚染され、正しい測定結果が得られないことがある。
（２）テスト用シリコン基板をレーザアニール装置から取り出して半導体ウェーハ抵抗率測定装置に搬送するのに時間が掛かり、測定結果が迅速に得られない。特に、１枚目のテスト用シリコン基板で適正なレーザアニール処理条件が得られなかった場合、新たなテスト用シリコン基板を用いて評価をやり直す必要があり、適正なレーザアニール処理条件が得られるまでに複数のテスト用シリコン基板が必要になると共に多くの時間が掛かる。
（３）テスト途中で適正なレーザアニール処理条件になっても、それが判らないため、１枚のテスト用シリコン基板について予定のテストを全て行うことになり、時間の無駄がある。
そこで、本発明の目的は、正しい測定結果を迅速に取得することが出来ると共に無駄なテスト実施を回避することが出来るシート抵抗率計測機構付きレーザアニール装置を提供することにある。 Conventionally, after performing a laser annealing process on a test silicon substrate with a laser annealing apparatus as described in Patent Document 1, the test silicon substrate is transferred to a semiconductor wafer resistivity measuring apparatus as described in Patent Document 2 above. The sheet resistivity was measured, an appropriate laser annealing treatment condition was obtained from the measurement result, and the laser annealing treatment of the product silicon substrate was performed under the obtained laser annealing treatment condition.
However, since the test silicon substrate subjected to the laser annealing treatment is transferred from the laser annealing apparatus to the semiconductor wafer resistivity measuring apparatus and the sheet resistivity is measured, there are the following problems.
(1) When the test silicon substrate is taken out from the laser annealing apparatus and transported, the surface is contaminated by outside air or the transport apparatus, and a correct measurement result may not be obtained.
(2) It takes time to take out the test silicon substrate from the laser annealing apparatus and transport it to the semiconductor wafer resistivity measuring apparatus, and the measurement result cannot be obtained quickly. In particular, if appropriate laser annealing conditions cannot be obtained with the first test silicon substrate, it is necessary to perform evaluation again using a new test silicon substrate, until appropriate laser annealing conditions are obtained. In addition, a plurality of test silicon substrates are required and much time is required.
(3) Since it is not known even if the appropriate laser annealing treatment condition is obtained during the test, all the scheduled tests are performed on one test silicon substrate, and time is wasted.
SUMMARY OF THE INVENTION An object of the present invention is to provide a laser annealing apparatus with a sheet resistivity measuring mechanism that can quickly acquire a correct measurement result and avoid unnecessary use of a test.

第１の観点では、本発明は、シリコン基板（Ｂ）の表面をレーザ照射スポット（１１）により走査するレーザアニール装置において、前記レーザ照射スポット（１１）によるレーザ照射位置よりも走査方向後方の前記シリコン基板（Ｂ）の表面に接触し、かつｚ方向に移動可能な複数の電極（５ａ〜５ｄ）と、前記走査中に前記複数の電極（５ａ〜５ｄ）による前記シリコン基板（Ｂ）に対する接触圧力を一定にするアクチュエータ（９）と、前記走査中に前記電極（５ｂ，５ｃ）間の抵抗を測定するための抵抗測定回路（１６）と、測定した抵抗からシート抵抗率を算出するシート抵抗率算出手段（１７）とを具備したことを特徴とするシート抵抗率計測機構付きレーザアニール装置（１００）を提供する。
上記第１の観点によるシート抵抗率計測機構付きレーザアニール装置（１００）では、テスト用シリコン基板をレーザアニール装置から取り出して搬送しなくても、レーザアニール装置内でシート抵抗率を計測できるので、例えば外気や搬送装置で表面が汚染されることが無く、正しい測定結果が得られる。さらにテスト途中に適正なレーザアニール処理条件になったことが判るため、以後の無駄なテスト実施を回避できる。 In a first aspect, the present invention provides a laser annealing apparatus that scans the surface of a silicon substrate (B) with a laser irradiation spot (11), and the laser irradiation position (11) is behind the laser irradiation position in the scanning direction. A plurality of electrodes (5a to 5d) that are in contact with the surface of the silicon substrate (B) and are movable in the z direction, and a contact with the silicon substrate (B) by the plurality of electrodes (5a to 5d) during the scanning An actuator (9) for making the pressure constant, a resistance measuring circuit (16) for measuring a resistance between the electrodes (5b, 5c) during the scanning, and a sheet resistance for calculating a sheet resistivity from the measured resistance Provided is a laser annealing apparatus (100) with a sheet resistivity measuring mechanism characterized by comprising a rate calculating means (17).
In the laser annealing apparatus (100) with the sheet resistivity measuring mechanism according to the first aspect, the sheet resistivity can be measured in the laser annealing apparatus without taking out and transporting the test silicon substrate from the laser annealing apparatus. For example, the surface is not contaminated by outside air or a transfer device, and a correct measurement result can be obtained. Furthermore, since it can be seen that the appropriate laser annealing treatment conditions have been reached during the test, it is possible to avoid unnecessary test execution thereafter.

第２の観点では、本発明は、前記第１の観点によるシート抵抗率計測機構付きレーザアニール装置（１００）において、レーザ照射強度に対する前記シート抵抗率の計測値から前記レーザ照射強度の適正値を求める演算手段（１７）を具備したことを特徴とするシート抵抗率計測機構付きレーザアニール装置（１００）を提供する。
上記第２の観点によるシート抵抗率計測機構付きレーザアニール装置（１００）では、レーザアニール処理条件の一つであるレーザ照射強度の適正値を求めることが出来る。 In a second aspect, the present invention provides a laser annealing apparatus (100) with a sheet resistivity measuring mechanism according to the first aspect, wherein an appropriate value of the laser irradiation intensity is calculated from the measured value of the sheet resistivity with respect to the laser irradiation intensity. Provided is a laser annealing apparatus (100) with a sheet resistivity measuring mechanism characterized by comprising a calculating means (17) to be obtained.
In the laser annealing apparatus (100) with the sheet resistivity measuring mechanism according to the second aspect, an appropriate value of the laser irradiation intensity, which is one of the laser annealing treatment conditions, can be obtained.

第３の観点では、本発明は、前記第１または前記第２の観点によるシート抵抗率計測機構付きレーザアニール装置（１００）において、フォーカスレンズ−基板間距離に対する前記シート抵抗率の計測値から前記フォーカスレンズ−基板間距離の適正値を求める演算手段（１７）を具備したことを特徴とするシート抵抗率計測機構付きレーザアニール装置（１００）を提供する。
上記第３の観点によるシート抵抗率計測機構付きレーザアニール装置（１００）では、レーザアニール処理条件の一つであるフォーカスレンズ−基板間距離の適正値を求めることが出来る。 In a third aspect, the present invention provides the laser annealing apparatus (100) with a sheet resistivity measuring mechanism according to the first or second aspect, wherein the measured value of the sheet resistivity with respect to the distance between the focus lens and the substrate is used. Provided is a laser annealing apparatus (100) with a sheet resistivity measuring mechanism, comprising a calculation means (17) for obtaining an appropriate value of the distance between the focus lens and the substrate.
In the laser annealing apparatus (100) with a sheet resistivity measurement mechanism according to the third aspect, an appropriate value of the distance between the focus lens and the substrate, which is one of laser annealing conditions, can be obtained.

第４の観点では、本発明は、前記第１から前記第３のいずれかの観点によるシート抵抗率計測機構付きレーザアニール装置（１００）において、前記電極（５ａ〜５ｄ）が前記シリコン基板（Ｂ）の表面に接触したときの前記電極（５ａ〜５ｄ）の高さを測定するための高さ測定手段（１２）を設けたことを特徴とするシート抵抗率計測機構付きレーザアニール装置（１００）を提供する。
上記第４の観点によるシート抵抗率計測機構付きレーザアニール装置（１００）では、シリコン基板（Ｂ）表面の凹凸を計測することが出来るので、その計測データによりフォーカスレンズ−基板間距離を補正することが可能となる。 In a fourth aspect, the present invention provides the laser annealing apparatus (100) with a sheet resistivity measuring mechanism according to any one of the first to third aspects, wherein the electrodes (5a to 5d) are formed of the silicon substrate (B). ) Provided with a height measuring means (12) for measuring the height of the electrodes (5a to 5d) when in contact with the surface of the laser annealing apparatus (100) with a sheet resistivity measuring mechanism I will provide a.
In the laser annealing apparatus (100) with a sheet resistivity measuring mechanism according to the fourth aspect, the unevenness on the surface of the silicon substrate (B) can be measured, and therefore the distance between the focus lens and the substrate is corrected based on the measurement data. Is possible.

本発明のシート抵抗率計測機構付きレーザアニール装置によれば、レーザアニール装置内でシート抵抗率を計測できるので、例えば外気で表面が汚染されることが無く、正しい測定結果が得られる。また、テスト用シリコン基板をレーザアニール装置から半導体ウェーハ抵抗率測定装置に搬送する必要が無いため、迅速に測定結果が得られる。さらに、テスト途中に適正なレーザアニール処理条件になったことが判るため、以後の無駄なテスト実施を回避できる。   According to the laser annealing apparatus with a sheet resistivity measuring mechanism of the present invention, since the sheet resistivity can be measured in the laser annealing apparatus, for example, the surface is not contaminated by outside air, and a correct measurement result can be obtained. In addition, since it is not necessary to transfer the test silicon substrate from the laser annealing apparatus to the semiconductor wafer resistivity measuring apparatus, a measurement result can be obtained quickly. Further, since it is found that the proper laser annealing treatment conditions are obtained during the test, it is possible to avoid the subsequent useless test.

実施例１に係るシート抵抗率計測機構付きレーザアニール装置を示す構成説明図である。1 is a configuration explanatory view showing a laser annealing apparatus with a sheet resistivity measuring mechanism according to Embodiment 1. FIG. 実施例１に係るシート抵抗率計測機構付きレーザアニール装置の抵抗測定回路を示す構成説明図である。It is a structure explanatory view showing a resistance measuring circuit of a laser annealing apparatus with a sheet resistivity measuring mechanism according to Example 1. 実施例１に係るシート抵抗率計測機構付きレーザアニール装置における長方形のレーザ照射スポットを示す平面図である。It is a top view which shows the rectangular laser irradiation spot in the laser annealing apparatus with a sheet resistivity measuring mechanism which concerns on Example 1. FIG. 実施例１に係るシート抵抗率計測機構付きレーザアニール装置におけるアニール条件評価処理を示すフロー図である。It is a flowchart which shows the annealing condition evaluation process in the laser annealing apparatus with a sheet resistivity measuring mechanism which concerns on Example 1. FIG. レーザ照射強度に対するシート抵抗率の変化を示す特性図である。It is a characteristic view which shows the change of the sheet resistivity with respect to laser irradiation intensity | strength. フォーカルレンズ−基板間距離に対するシート抵抗率の変化を示す特性図である。It is a characteristic view which shows the change of the sheet resistivity with respect to the distance between a focal lens and a board | substrate.

以下、図に示す実施の形態により本発明をさらに詳細に説明する。なお、これにより本発明が限定されるものではない。   Hereinafter, the present invention will be described in more detail with reference to embodiments shown in the drawings. Note that the present invention is not limited thereby.

−実施例１−
図１は、実施例１に係るシート抵抗率計測機構付きレーザアニール装置１００を示す構成説明図である。
このシート抵抗率計測機構付きレーザアニール装置１００は、シリコン基板Ｂを載せてｘ方向およびｙ方向に移動しうるＸＹステージ１と、シリコン基板ＢおよびＸＹステージ１を外気と遮断して収容しうるレーザ照射室２と、レーザ照射室２の外側に設置されレーザビームを発生するレーザ発振器８およびアテネータ１５およびホモジナイザ１０と、レーザビームをレーザ照射室２の外側から内側に導入すると共にシリコン基板Ｂの表面に長方形のレーザ照射スポット１１（図３参照）を形成するフォーカスレンズ機構４と、レーザ照射スポット１１によるレーザ照射位置よりも走査方向（＝シリコン基板Ｂの表面をレーザ照射スポット１１が相対移動する方向）後方のシリコン基板Ｂの表面に接触しうる４本の針状の電極５ａ〜５ｄ（図２，図３参照）と、電極５ｂ−電極５ｃ間の抵抗を測定するための抵抗測定回路１６（図２参照）と、４本の電極５ａ〜５ｄを一定の圧力でシリコン基板Ｂの表面に接触させたりシリコン基板Ｂの表面から離したりするために４本の電極５ａ〜５ｄをｚ方向（＝高さ方向）に移動しうる電極用アクチュエータ９と、４本の電極５ａ〜５ｄのｚ方向位置（＝高さ）を測定しうる位置センサ１２と、ＸＹステージ１によるシリコン基板Ｂの移動制御およびフォーカスレンズ機構４によるフォーカス制御およびアテネータ１５によるレーザ照射強度制御および抵抗測定回路１６によるシート抵抗率測定および位置センサ１２による基板表面高さ測定を行う制御部１７とを具備している。
制御部１７は、例えばコンピュータである。 Example 1
FIG. 1 is a configuration explanatory diagram illustrating a laser annealing apparatus 100 with a sheet resistivity measuring mechanism according to the first embodiment.
The laser annealing apparatus 100 with a sheet resistivity measuring mechanism has an XY stage 1 on which a silicon substrate B is placed and can move in the x direction and the y direction, and a laser that can contain the silicon substrate B and the XY stage 1 while being shielded from outside air. Irradiation chamber 2, laser oscillator 8 and attenuator 15 and homogenizer 10 installed outside the laser irradiation chamber 2 to generate a laser beam, and introducing the laser beam from the outside to the inside of the laser irradiation chamber 2, and the surface of the silicon substrate B The focus lens mechanism 4 that forms a rectangular laser irradiation spot 11 (see FIG. 3) and the scanning direction (= the direction in which the laser irradiation spot 11 moves relative to the surface of the silicon substrate B relative to the laser irradiation position by the laser irradiation spot 11) ) Four needle-like electrodes 5a to 5d that can contact the surface of the rear silicon substrate B (see FIG. 3), a resistance measurement circuit 16 (see FIG. 2) for measuring the resistance between the electrode 5b and the electrode 5c, and the four electrodes 5a to 5d are brought into contact with the surface of the silicon substrate B at a constant pressure. The electrode actuator 9 that can move the four electrodes 5a to 5d in the z direction (= height direction) in order to move them away from the surface of the silicon substrate B, and the positions of the four electrodes 5a to 5d in the z direction (= Height) position sensor 12, movement control of silicon substrate B by XY stage 1, focus control by focus lens mechanism 4, laser irradiation intensity control by attenuator 15, and sheet resistivity measurement by resistance measurement circuit 16 And a control unit 17 for measuring the substrate surface height by the position sensor 12.
The control unit 17 is a computer, for example.

図２に示すように、抵抗測定回路１６は、一列に並ぶ４本の電極５ａ〜５ｄの外側の２本の電極５ａ，５ｄ間に流れる電流Ｉと、内側の２本の電極５ｂ，５ｃ間に生じる電圧Ｖとを出力する回路である。
制御部１７は、内側の２本の電極５ｂ，５ｃ間の抵抗Ｒを、Ｒ＝Ｖ／Ｉにより算出し、さらに、内側の２本の電極５ｂ，５ｃ間の距離をＰとするとき、シート抵抗率ｒを、ｒ＝Ｒ／Ｐにより算出する。 As shown in FIG. 2, the resistance measurement circuit 16 includes a current I flowing between the two electrodes 5a and 5d on the outer side of the four electrodes 5a to 5d arranged in a line, and the distance between the two inner electrodes 5b and 5c. Is a circuit that outputs a voltage V generated in
The control unit 17 calculates the resistance R between the inner two electrodes 5b and 5c by R = V / I, and when the distance between the inner two electrodes 5b and 5c is P, the sheet The resistivity r is calculated by r = R / P.

図３は、シリコン基板Ｂを示す平面図である。
シリコン基板Ｂは、例えば直径２００ｍｍ、厚さ７２５μｍの円板である。
レーザ照射スポット１１は、例えば長さ２５ｍｍ、幅７μｍの長方形である。
電極５ａ〜５ｂは、レーザ照射スポット１１から例えば距離Ｄ＝３０ｍｍだけ走査方向後方に位置している。
なお、レーザ照射スポット１１および電極５ａ〜５ｂの位置はレーザ照射室２に対して固定であり、ＸＹステージ１がレーザ照射室２に対して逆走査方向にシリコン基板Ｂを移動することによりレーザ照射スポット１１によるシリコン基板Ｂの表面の走査が行われる。 FIG. 3 is a plan view showing the silicon substrate B. FIG.
The silicon substrate B is, for example, a disc having a diameter of 200 mm and a thickness of 725 μm.
The laser irradiation spot 11 is, for example, a rectangle having a length of 25 mm and a width of 7 μm.
The electrodes 5a to 5b are located behind the laser irradiation spot 11 by a distance D = 30 mm, for example, in the scanning direction.
The positions of the laser irradiation spot 11 and the electrodes 5 a to 5 b are fixed with respect to the laser irradiation chamber 2, and the XY stage 1 moves the silicon substrate B in the reverse scanning direction with respect to the laser irradiation chamber 2. The surface of the silicon substrate B is scanned by the spot 11.

図４は、制御部１７が実行するアニール条件評価処理を示すフロー図である。
ステップＳ１では、評価対象のアニール条件項目の初期値を設定する。例えば評価対象のアニール条件項目がレーザ照射強度なら、初期値として最小値を設定する。 FIG. 4 is a flowchart showing the annealing condition evaluation process executed by the control unit 17.
In step S1, the initial value of the annealing condition item to be evaluated is set. For example, if the annealing condition item to be evaluated is laser irradiation intensity, a minimum value is set as an initial value.

ステップＳ２では、テスト用シリコン基板Ｂの表面の所定領域でレーザ照射スポット１１による走査を行う。所定領域は、例えば走査方向に幅４０ｍｍ程度の領域である。
ステップＳ３では、照射した領域でシート抵抗率ｒを求める。
ステップＳ４では、評価可能なデータが集まったか判定し、評価可能なデータが集まったならステップＳ５へ進み、まだ集まっていないならステップＳ７へ進む。例えばシート抵抗率ｒの変化率を評価基準とするならば、変化率を算出できるだけのデータが集まったならステップＳ５へ進み、まだ集まっていないならステップＳ７へ進む。 In step S2, scanning with the laser irradiation spot 11 is performed in a predetermined region on the surface of the test silicon substrate B. The predetermined area is, for example, an area having a width of about 40 mm in the scanning direction.
In step S3, the sheet resistivity r is obtained in the irradiated region.
In step S4, it is determined whether or not evaluable data has been collected. If evaluable data has been collected, the process proceeds to step S5, and if not yet collected, the process proceeds to step S7. For example, if the rate of change of the sheet resistivity r is used as an evaluation criterion, the process proceeds to step S5 if data sufficient to calculate the rate of change have been collected, and to step S7 if not yet collected.

ステップＳ５では、集まったデータに基づいて評価対象のアニール条件項目の値を評価する。例えばシート抵抗率ｒの変化率を算出する。
ステップＳ６では、評価対象のアニール条件項目の適正な値が得られたなら処理を終了し、まだ得られていないならステップＳ７へ進む。例えばシート抵抗率の変化率が所定の値よりも０に近くなったなら評価対象のアニール条件項目の適正な値が得られたと判定して処理を終了し、シート抵抗率の変化率が所定の値よりも０から離れているなら評価対象のアニール条件項目の適正な値がまだ得られていないと判定しステップＳ７へ進む。 In step S5, the value of the annealing condition item to be evaluated is evaluated based on the collected data. For example, the rate of change of the sheet resistivity r is calculated.
In step S6, if an appropriate value of the annealing condition item to be evaluated is obtained, the process is terminated, and if not yet obtained, the process proceeds to step S7. For example, if the change rate of the sheet resistivity is closer to 0 than a predetermined value, it is determined that an appropriate value of the annealing condition item to be evaluated has been obtained, and the process is terminated, and the change rate of the sheet resistivity is a predetermined value. If it is far from 0 than the value, it is determined that an appropriate value of the annealing condition item to be evaluated has not yet been obtained, and the process proceeds to step S7.

ステップＳ７では、評価対象のアニール条件項目の値を変更し、ステップＳ２に戻る。例えば評価対象のアニール条件項目がレーザ照射強度なら、所定量だけレーザ照射強度を増加させてステップＳ２に戻る。これにより、新たな所定領域で走査が続けられることになる。   In step S7, the value of the annealing condition item to be evaluated is changed, and the process returns to step S2. For example, if the annealing condition item to be evaluated is the laser irradiation intensity, the laser irradiation intensity is increased by a predetermined amount, and the process returns to step S2. As a result, scanning is continued in a new predetermined area.

図５に、レーザ照射強度Ｅの変化に対するシート抵抗率ｒの変化を例示する。
評価対象のアニール条件項目がレーザ照射強度Ｅのとき、制御１７は、アテネータ１５によりレーザ照射強度Ｅを初期値から増加させながらシート抵抗率ｒの変化率（＝Δｒ／ΔＥ）を求めてレーザ照射強度Ｅを評価し、レーザ照射強度Ｅａで適正な値と評価したなら、そこでテスト走査を終了することが出来る。 FIG. 5 illustrates the change in the sheet resistivity r with respect to the change in the laser irradiation intensity E.
When the annealing condition item to be evaluated is the laser irradiation intensity E, the control 17 obtains the change rate (= Δr / ΔE) of the sheet resistivity r while increasing the laser irradiation intensity E from the initial value by the attenuator 15 to perform the laser irradiation. If the intensity E is evaluated and the laser irradiation intensity Ea is evaluated to be an appropriate value, the test scan can be terminated there.

図６に、フォーカスレンズ−基板間距離Ｆの変化に対するシート抵抗率ｒの変化を例示する。
評価対象のアニール条件項目がフォーカスレンズ−基板間距離Ｆのとき、制御部１７は、フォーカスレンズ機構４によりフォーカスレンズ−基板間距離Ｆを初期値から増加させながらシート抵抗率ｒの変化率（＝Δｒ／ΔＥ）を求めてフォーカスレンズ−基板間距離Ｆを評価し、フォーカスレンズ−基板間距離Ｆａで適正な値と評価したなら、そこでテスト走査を終了することが出来る。 FIG. 6 illustrates the change in the sheet resistivity r with respect to the change in the focus lens-substrate distance F.
When the annealing condition item to be evaluated is the focus lens-substrate distance F, the control unit 17 causes the focus lens mechanism 4 to increase the focus lens-substrate distance F from the initial value while changing the sheet resistivity r (= If Δr / ΔE) is obtained and the focus lens-substrate distance F is evaluated, and the focus lens-substrate distance Fa is evaluated as an appropriate value, then the test scan can be terminated.

なお、制御部１７は、一定の接触圧力を維持するように電極用アクチュエータ９で電極５ａ〜５ｄの高さを制御しながら走査し、位置センサ１２で電極５ａ〜５ｄの高さの変化分を測定し、その変化分だけフォーカスレンズ機構４によるフォーカスレンズ−基板間距離Ｆを補正する。これにより、フォーカスレンズ−基板間距離Ｆに対するテスト用シリコン基板Ｂの表面の凹凸の影響を抑制することが出来る。   The control unit 17 performs scanning while controlling the height of the electrodes 5a to 5d with the electrode actuator 9 so as to maintain a constant contact pressure, and the position sensor 12 determines the change in the height of the electrodes 5a to 5d. The measurement is performed, and the focus lens-substrate distance F by the focus lens mechanism 4 is corrected by the change. Thereby, the influence of the unevenness | corrugation of the surface of the silicon substrate B for a test with respect to the focus lens-substrate distance F can be suppressed.

実施例１に係るシート抵抗率計測機構付きレーザアニール装置１００によれば次の効果が得られる。
（１）テスト用シリコン基板Ｂをシート抵抗率計測機構付きレーザアニール装置１００から取り出して搬送しなくても、シート抵抗率計測機構付きレーザアニール装置１００内でシート抵抗率ｒを計測できるので、例えば外気や搬送装置で表面が汚染されることが無く、正しい測定結果が得られる。
（２）テスト用シリコン基板Ｂをレーザアニール装置から取り出して半導体ウェーハ抵抗率測定装置に搬送する必要が無いため、迅速に測定結果が得られる。
（３）テスト途中に適正なレーザアニール処理条件になったことが判るため、以後の無駄なテスト実施を回避できる。
（４）位置センサ１２で電極５ａ〜５ｄの高さの変化分を測定し、その変化分だけフォーカスレンズ機構４によるフォーカスレンズ−基板間距離Ｆを補正するので、フォーカスレンズ−基板間距離Ｆに対するテスト用シリコン基板Ｂの表面の凹凸の影響を抑制することが出来る。そして、テスト用シリコン基板Ｂの表面の凹凸を接触式で検出するため、光学式で検出する場合に比べてテスト用シリコン基板Ｂの表面での光反射の影響や光の角度の影響を受けない利点がある。 According to the laser annealing apparatus 100 with a sheet resistivity measuring mechanism according to the first embodiment, the following effects can be obtained.
(1) Since the sheet resistivity r can be measured in the laser annealing apparatus 100 with a sheet resistivity measuring mechanism without taking out the test silicon substrate B from the laser annealing apparatus 100 with a sheet resistivity measuring mechanism and carrying it, for example, The surface is not contaminated by outside air or a transfer device, and a correct measurement result can be obtained.
(2) Since there is no need to take out the test silicon substrate B from the laser annealing apparatus and transport it to the semiconductor wafer resistivity measuring apparatus, a measurement result can be obtained quickly.
(3) Since it is found that the proper laser annealing treatment conditions have been reached during the test, it is possible to avoid unnecessary test execution thereafter.
(4) Since the position sensor 12 measures the change in height of the electrodes 5a to 5d and corrects the focus lens-substrate distance F by the focus lens mechanism 4 by the change, the change to the focus lens-substrate distance F is corrected. The influence of unevenness on the surface of the test silicon substrate B can be suppressed. And since the unevenness | corrugation of the surface of the test silicon substrate B is detected by a contact method, it is not influenced by the influence of the light reflection on the surface of the test silicon substrate B and the angle of light compared with the case where it detects by an optical method. There are advantages.

本発明のシート抵抗率計測機構付きレーザアニール装置は、例えばガラス基板上に形成した非晶質シリコン半導体層を多結晶シリコン半導体層化する処理に利用できる。   The laser annealing apparatus with a sheet resistivity measuring mechanism of the present invention can be used for, for example, a process of forming an amorphous silicon semiconductor layer formed on a glass substrate into a polycrystalline silicon semiconductor layer.

１ ＸＹステージ
２ レーザ照射室
４ フォーカスレンズ機構
５ａ〜５ｄ 電極
８ レーザ発振器
９ 電極用アクチュエータ
１１ レーザ照射スポット
１２ 位置センサ
１６ 抵抗測定回路
１７ 制御部
１００ シート抵抗率計測機構付きレーザアニール装置
Ｂ シリコン基板 DESCRIPTION OF SYMBOLS 1 XY stage 2 Laser irradiation chamber 4 Focus lens mechanism 5a-5d Electrode 8 Laser oscillator 9 Electrode actuator 11 Laser irradiation spot 12 Position sensor 16 Resistance measurement circuit 17 Control part 100 Laser annealing apparatus with sheet resistivity measurement mechanism B Silicon substrate

Claims (4)

シリコン基板（Ｂ）の表面をレーザ照射スポット（１１）により走査するレーザアニール装置において、前記レーザ照射スポット（１１）によるレーザ照射位置よりも走査方向後方の前記シリコン基板（Ｂ）の表面に接触し、かつｚ方向に移動可能な複数の電極（５ａ〜５ｄ）と、前記走査中に前記複数の電極（５ａ〜５ｄ）による前記シリコン基板（Ｂ）に対する接触圧力を一定にするアクチュエータ（９）と、前記走査中に前記電極（５ｂ，５ｃ）間の抵抗を測定するための抵抗測定回路（１６）と、測定した抵抗からシート抵抗率を算出するシート抵抗率算出手段（１７）とを具備したことを特徴とするシート抵抗率計測機構付きレーザアニール装置（１００）。 In the laser annealing apparatus that scans the surface of the silicon substrate (B) with the laser irradiation spot (11), the surface of the silicon substrate (B) is in contact with the surface of the silicon substrate (B) behind the laser irradiation position by the laser irradiation spot (11). A plurality of electrodes (5a to 5d) movable in the z direction, and an actuator (9) for making the contact pressure of the plurality of electrodes (5a to 5d) to the silicon substrate (B) constant during the scanning. And a resistance measurement circuit (16) for measuring the resistance between the electrodes (5b, 5c) during the scanning, and a sheet resistivity calculation means (17) for calculating the sheet resistivity from the measured resistance. A laser annealing apparatus (100) with a sheet resistivity measuring mechanism. 請求項１に記載のシート抵抗率計測機構付きレーザアニール装置（１００）において、レーザ照射強度に対する前記シート抵抗率の計測値から前記レーザ照射強度の適正値を求める演算手段（１７）を具備したことを特徴とするシート抵抗率計測機構付きレーザアニール装置（１００）。   The laser annealing apparatus (100) with a sheet resistivity measuring mechanism according to claim 1, further comprising a calculation means (17) for obtaining an appropriate value of the laser irradiation intensity from the measured value of the sheet resistivity with respect to the laser irradiation intensity. A laser annealing apparatus (100) with a sheet resistivity measuring mechanism. 請求項１または請求項２に記載のシート抵抗率計測機構付きレーザアニール装置（１００）においてフォーカスレンズ−基板間距離に対する前記シート抵抗率の計測値から前記フォーカスレンズ−基板間距離の適正値を求める演算手段（１７）を具備したことを特徴とするシート抵抗率計測機構付きレーザアニール装置（１００）。   3. An appropriate value of the distance between the focus lens and the substrate is obtained from the measured value of the sheet resistivity with respect to the distance between the focus lens and the substrate in the laser annealing apparatus (100) with a sheet resistivity measuring mechanism according to claim 1 or 2. A laser annealing apparatus (100) with a sheet resistivity measuring mechanism, comprising a calculation means (17). 請求項１から請求項３のいずれかに記載のシート抵抗率計測機構付きレーザアニール装置（１００）において、前記電極（５ａ〜５ｄ）が前記シリコン基板（Ｂ）の表面に接触したときの前記電極（５ａ〜５ｄ）の高さを測定するための高さ測定手段（１２）を設けたことを特徴とするシート抵抗率計測機構付きレーザアニール装置（１００）。   The laser annealing apparatus (100) with a sheet resistivity measuring mechanism according to any one of claims 1 to 3, wherein the electrodes (5a to 5d) are in contact with the surface of the silicon substrate (B). A laser annealing apparatus (100) with a sheet resistivity measuring mechanism, comprising height measuring means (12) for measuring the height of (5a to 5d).
JP2012106624A 2012-05-08 2012-05-08 Laser annealing equipment with sheet resistivity measurement mechanism Expired - Fee Related JP5946209B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012106624A JP5946209B2 (en) 2012-05-08 2012-05-08 Laser annealing equipment with sheet resistivity measurement mechanism

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012106624A JP5946209B2 (en) 2012-05-08 2012-05-08 Laser annealing equipment with sheet resistivity measurement mechanism

Publications (2)

Publication Number Publication Date
JP2013235915A JP2013235915A (en) 2013-11-21
JP5946209B2 true JP5946209B2 (en) 2016-07-05

Family

ID=49761808

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012106624A Expired - Fee Related JP5946209B2 (en) 2012-05-08 2012-05-08 Laser annealing equipment with sheet resistivity measurement mechanism

Country Status (1)

Country Link
JP (1) JP5946209B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6957099B2 (en) * 2017-09-05 2021-11-02 住友重機械工業株式会社 Laser annealing device and sheet resistance calculation device
GB2571997B (en) * 2018-03-16 2021-10-27 X Fab Texas Inc Use of wafer brightness to monitor laser anneal process and laser anneal tool

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5939492A (en) * 1982-08-27 1984-03-03 Mitsubishi Electric Corp Laser working method
JPH1154581A (en) * 1997-07-30 1999-02-26 Toshiba Corp Method and equipment for inspection semiconductor device, and method and system for producing semiconductor device
JP2003234288A (en) * 2002-02-07 2003-08-22 Sony Corp Polycrystal semiconductor film and manufacturing method, and manufacturing device for semiconductor element
JP2005175237A (en) * 2003-12-12 2005-06-30 Hitachi Ltd Manufacturing method of thin film semiconductor device
JP5463543B2 (en) * 2009-03-24 2014-04-09 株式会社国際電気セミコンダクターサービス Semiconductor wafer resistivity measuring apparatus and measuring method
JP2011187760A (en) * 2010-03-10 2011-09-22 Sumitomo Heavy Ind Ltd Method for manufacturing semiconductor device, and laser annealing apparatus

Also Published As

Publication number Publication date
JP2013235915A (en) 2013-11-21

Similar Documents

Publication Publication Date Title
JP5331828B2 (en) Charged particle beam equipment
JP2010073703A (en) Apparatus and method for inspecting pattern
US9207189B2 (en) Sample support apparatus
WO2010055610A1 (en) Pattern check device and pattern check method
KR101662306B1 (en) Method of measuring critical dimension of pattern and apparatus for performing the method
KR102411866B1 (en) Laser processing apparatus
JP2016002580A (en) Method for detecting focal point shift of laser
US20140322833A1 (en) Irradiation apparatus for irradiating charged particle beam, method for irradiation of charged particle beam, and method for manufacturing article
JP5590043B2 (en) TFT substrate inspection apparatus and TFT substrate inspection method
KR20130099600A (en) Quality testing device for graphene sheets and method thereof
JP2010015732A (en) Charged particle beam device
JP5946209B2 (en) Laser annealing equipment with sheet resistivity measurement mechanism
KR20190032486A (en) Measuring apparatus, exposure apparatus, and manufacturing method of article
JP2012178451A (en) Mask inspection method and apparatus therefor
JP2018160553A (en) Laser processing device
JP5455957B2 (en) Semiconductor element failure analysis method and failure analysis apparatus
JP2012049045A (en) Measurement or inspection apparatus and measurement or inspection method using the same
TW202030764A (en) Method for calibrating a scanning charged particle microscope
JP2016100366A (en) Lithographic apparatus and manufacturing method of article
JP2007096011A (en) Sample inspection method
US11257686B2 (en) Laser annealing apparatus and sheet resistance calculation apparatus
JP6361970B2 (en) Inspection method of structure for nanoimprint and manufacturing method thereof
CN108490742B (en) Exposure apparatus and exposure method
JP7305495B2 (en) Inspection device and inspection method
JP2008202969A (en) Film thickness measuring device and film thickness measuring method

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20140620

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20150520

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20150520

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20150616

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150826

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20151023

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20160525

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20160530

R150 Certificate of patent or registration of utility model

Ref document number: 5946209

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees