JP5942068B2 - 化合物半導体受光素子アレイ - Google Patents
化合物半導体受光素子アレイ Download PDFInfo
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- JP5942068B2 JP5942068B2 JP2011550879A JP2011550879A JP5942068B2 JP 5942068 B2 JP5942068 B2 JP 5942068B2 JP 2011550879 A JP2011550879 A JP 2011550879A JP 2011550879 A JP2011550879 A JP 2011550879A JP 5942068 B2 JP5942068 B2 JP 5942068B2
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- 239000004065 semiconductor Substances 0.000 title claims description 51
- 150000001875 compounds Chemical class 0.000 title claims description 38
- 239000000758 substrate Substances 0.000 claims description 43
- 230000004888 barrier function Effects 0.000 claims description 38
- 239000012535 impurity Substances 0.000 claims description 12
- 238000009792 diffusion process Methods 0.000 description 29
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 23
- 238000000034 method Methods 0.000 description 21
- 239000011701 zinc Substances 0.000 description 20
- 239000013078 crystal Substances 0.000 description 18
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 17
- 229910052725 zinc Inorganic materials 0.000 description 17
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 12
- 229910000673 Indium arsenide Inorganic materials 0.000 description 11
- 230000007547 defect Effects 0.000 description 11
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 11
- 230000031700 light absorption Effects 0.000 description 11
- 230000035945 sensitivity Effects 0.000 description 11
- 239000000969 carrier Substances 0.000 description 9
- 238000000926 separation method Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000005036 potential barrier Methods 0.000 description 7
- 229910005542 GaSb Inorganic materials 0.000 description 6
- 238000001514 detection method Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000002955 isolation Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000003491 array Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 3
- 230000001443 photoexcitation Effects 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
- H01L31/1035—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14649—Infrared imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14694—The active layers comprising only AIIIBV compounds, e.g. GaAs, InP
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
Description
また、通常のプレーナ型PDでは、共通電極がN型、個別アレイ要素に対応する電極がP型となるため、共通電極を正電位にバイアスする必要がある。したがって、パッケージに対してPDの基板を絶縁する必要がある。
一方、図5は従来のプレーナ型PDをマトリクス状に配置した例で、各画素に対応して浅い亜鉛拡散で形成したP型層4が配置されている。
また、本例では、窓層3がN型であり、感光層2との接合面において、伝導帯のバンドオフセットΔEc23が0.10eV、価電子帯のバンドオフセットΔEv23が0.26eVであり、伝導帯のバンドオフセットのほうが価電子帯のバンドオフセットよりも小さくなっている。そのため、微弱光や低バイアス条件においてもキャリアが停留することなく排出される。なお、In0.25Ga0.75Sb感光層2の禁制帯幅は、0.51eV、In0.22Al0.23Ga0.55Sb基板側バリア層8および、In0.67Al0.33As0.41Sb0.59表面側窓層3の禁制帯幅は、それぞれ、0.87eVである。
なお、In0.77Ga0.23As感光層2の禁制帯幅は、0.51eV、In0.76Al0.24As基板側バリア層8および、InAs0.5P0.5窓層3の禁制帯幅は、それぞれ、0.86eVおよび0.83eVである。また、本例では、窓層3がN型であり、感光層2との接合面において、伝導帯のバンドオフセットΔEc23が0.07eV、価電子帯のバンドオフセットΔEv23が0.24eVで伝導帯のバンドオフセットのほうが価電子帯のバンドオフセットよりも小さくなっている。
2 感光層
3 N型窓層
4 P型層
5 誘電体膜
6 N側電極
7 P側電極
8 バリア層
9 カソードコンタクト層
10 開口部
11 表面側P側電極
12 集積回路もしくプリント基板
13 バンプ
14 素子分離溝
15 緩和層
16 格子整合緩和層
17 アノードコンタクト層
41 N型層
Claims (4)
- プレーナ型の化合物半導体受光素子アレイであって、化合物半導体基板上に形成されたバリア層上に、該バリア層よりも禁制帯幅が小さく、第1電導型もしくはアンドープの化合物半導体からなる感光層と、該感光層上に形成され、該感光層よりも禁制帯幅が大きな化合物半導体からなる上記第1電導型の窓層とが積層されており、上記バリア層が第2導電型であると共に、少なくとも各素子の感光層の周辺、および窓層の周辺が該第2電導型の不純物ドープ層となっており、該不純物ドープ層が上記バリア層に到達していることにより、隣接素子間がNPNあるいはPNP接合により電気的に分離されていることを特徴とする化合物半導体受光素子アレイ。
- 上記窓層と上記感光層の接合面の伝導帯および価電子帯のバンドオフセットをそれぞれΔEc 23 、ΔEv 23 としたとき、該窓層がN型の場合にΔEc 23 がΔEv 23 より小さく、該窓層がP型の場合にはΔEc 23 がΔEv 23 より大きいことを特徴とする請求項1に記載の化合物半導体受光素子アレイ。
- 上記基板側から光入射せしめるように、上記第1電導型の窓層に導通する電極と、上記第2電導型の不純物ドープ層に導通する電極とが共に該窓層の表面側に形成されていることを特徴とする請求項1に記載の化合物半導体受光素子アレイ。
- 上記基板とは格子定数が異なる緩和層を介して感光層が形成されていることを特徴とする請求項1に記載の化合物半導体受光素子アレイ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010012875 | 2010-01-25 | ||
JP2010012875 | 2010-01-25 | ||
PCT/JP2011/050269 WO2011089949A1 (ja) | 2010-01-25 | 2011-01-11 | 化合物半導体受光素子アレイ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2011089949A1 JPWO2011089949A1 (ja) | 2013-05-23 |
JP5942068B2 true JP5942068B2 (ja) | 2016-06-29 |
Family
ID=44306752
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011550879A Expired - Fee Related JP5942068B2 (ja) | 2010-01-25 | 2011-01-11 | 化合物半導体受光素子アレイ |
Country Status (3)
Country | Link |
---|---|
US (1) | US8610170B2 (ja) |
JP (1) | JP5942068B2 (ja) |
WO (1) | WO2011089949A1 (ja) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6176585B2 (ja) * | 2011-10-24 | 2017-08-09 | 住友電気工業株式会社 | 受光素子、およびその製造方法 |
JP5897336B2 (ja) * | 2012-01-06 | 2016-03-30 | 住友電工デバイス・イノベーション株式会社 | 半導体受光装置 |
IL220675B (en) * | 2012-06-28 | 2019-10-31 | Elta Systems Ltd | phototransistor |
JP6265032B2 (ja) | 2014-04-28 | 2018-01-24 | 住友電気工業株式会社 | 半導体受光素子 |
US10383520B2 (en) * | 2014-09-18 | 2019-08-20 | Masimo Semiconductor, Inc. | Enhanced visible near-infrared photodiode and non-invasive physiological sensor |
JP6459460B2 (ja) | 2014-12-10 | 2019-01-30 | 住友電気工業株式会社 | 半導体受光素子を作製する方法 |
JP2016111294A (ja) | 2014-12-10 | 2016-06-20 | 住友電気工業株式会社 | 半導体受光素子を作製する方法 |
US9768339B2 (en) * | 2015-06-22 | 2017-09-19 | IQE, plc | Optoelectronic detectors having a dilute nitride layer on a substrate with a lattice parameter nearly matching GaAs |
JP6507912B2 (ja) | 2015-07-30 | 2019-05-08 | 三菱電機株式会社 | 半導体受光素子 |
FR3040537B1 (fr) * | 2015-08-26 | 2017-09-01 | New Imaging Tech | Matrice de photodiodes a cathodes isolees |
DE112017001031T5 (de) | 2016-02-29 | 2019-01-03 | Sony Corporation | Festkörper-Bildaufnahmevorrichtung |
JP6633437B2 (ja) * | 2016-03-24 | 2020-01-22 | 旭化成エレクトロニクス株式会社 | 量子型赤外線センサ |
KR101766247B1 (ko) | 2016-04-26 | 2017-08-08 | 국방과학연구소 | 평면형 포토 다이오드 |
JP7109718B2 (ja) * | 2017-11-24 | 2022-08-01 | アイアールスペック株式会社 | 化合物半導体フォトダイオードアレイ |
JP7027970B2 (ja) * | 2018-03-07 | 2022-03-02 | 住友電気工業株式会社 | 半導体受光デバイス、赤外線検知装置 |
CN108598111B (zh) * | 2018-04-24 | 2021-01-29 | 京东方科技集团股份有限公司 | 具有指纹识别功能的显示基板、方法及显示装置 |
CN112204756A (zh) * | 2018-05-29 | 2021-01-08 | Iqe公司 | 在缓冲器上方形成的光电子器件 |
JP7163803B2 (ja) * | 2019-02-01 | 2022-11-01 | 住友電気工業株式会社 | 半導体受光デバイス |
JPWO2022107723A1 (ja) * | 2020-11-18 | 2022-05-27 | ||
JP2022126956A (ja) * | 2021-02-19 | 2022-08-31 | 国立大学法人千葉大学 | 静脈撮像装置、静脈撮像方法 |
Citations (9)
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JPH0258878A (ja) * | 1988-08-25 | 1990-02-28 | Nec Corp | 半導体受光素子アレイ |
JPH0492479A (ja) * | 1990-08-07 | 1992-03-25 | Hikari Keisoku Gijutsu Kaihatsu Kk | 受光素子 |
JPH05283730A (ja) * | 1992-03-30 | 1993-10-29 | Hikari Keisoku Gijutsu Kaihatsu Kk | 受光素子 |
JPH05291605A (ja) * | 1992-04-10 | 1993-11-05 | Mitsubishi Electric Corp | 半導体受光素子 |
JPH09298285A (ja) * | 1996-04-30 | 1997-11-18 | Nec Corp | 受光素子内蔵集積回路装置及びその製造方法 |
JP2001144278A (ja) * | 1999-11-12 | 2001-05-25 | Nippon Sheet Glass Co Ltd | 受光素子アレイ |
JP2002076425A (ja) * | 2000-08-24 | 2002-03-15 | Minolta Co Ltd | 光電変換装置 |
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JP2009283603A (ja) * | 2008-05-21 | 2009-12-03 | Sumitomo Electric Ind Ltd | 検出装置、受光素子アレイおよびその製造方法 |
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-
2011
- 2011-01-11 US US13/574,487 patent/US8610170B2/en active Active
- 2011-01-11 JP JP2011550879A patent/JP5942068B2/ja not_active Expired - Fee Related
- 2011-01-11 WO PCT/JP2011/050269 patent/WO2011089949A1/ja active Application Filing
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JPH0258878A (ja) * | 1988-08-25 | 1990-02-28 | Nec Corp | 半導体受光素子アレイ |
JPH0492479A (ja) * | 1990-08-07 | 1992-03-25 | Hikari Keisoku Gijutsu Kaihatsu Kk | 受光素子 |
JPH05283730A (ja) * | 1992-03-30 | 1993-10-29 | Hikari Keisoku Gijutsu Kaihatsu Kk | 受光素子 |
JPH05291605A (ja) * | 1992-04-10 | 1993-11-05 | Mitsubishi Electric Corp | 半導体受光素子 |
JPH09298285A (ja) * | 1996-04-30 | 1997-11-18 | Nec Corp | 受光素子内蔵集積回路装置及びその製造方法 |
JP2001144278A (ja) * | 1999-11-12 | 2001-05-25 | Nippon Sheet Glass Co Ltd | 受光素子アレイ |
JP2002076425A (ja) * | 2000-08-24 | 2002-03-15 | Minolta Co Ltd | 光電変換装置 |
WO2009107568A1 (ja) * | 2008-02-25 | 2009-09-03 | 独立行政法人産業技術総合研究所 | 光電界効果トランジスタ,及びその製造方法 |
JP2009283603A (ja) * | 2008-05-21 | 2009-12-03 | Sumitomo Electric Ind Ltd | 検出装置、受光素子アレイおよびその製造方法 |
Also Published As
Publication number | Publication date |
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US20120286328A1 (en) | 2012-11-15 |
JPWO2011089949A1 (ja) | 2013-05-23 |
US8610170B2 (en) | 2013-12-17 |
WO2011089949A1 (ja) | 2011-07-28 |
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