JP5940691B1 - 電圧生成回路、半導体装置およびフラッシュメモリ - Google Patents
電圧生成回路、半導体装置およびフラッシュメモリ Download PDFInfo
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- JP5940691B1 JP5940691B1 JP2015020498A JP2015020498A JP5940691B1 JP 5940691 B1 JP5940691 B1 JP 5940691B1 JP 2015020498 A JP2015020498 A JP 2015020498A JP 2015020498 A JP2015020498 A JP 2015020498A JP 5940691 B1 JP5940691 B1 JP 5940691B1
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- 239000004065 semiconductor Substances 0.000 title claims description 10
- 239000003990 capacitor Substances 0.000 claims abstract description 24
- 230000008878 coupling Effects 0.000 claims abstract description 8
- 238000010168 coupling process Methods 0.000 claims abstract description 8
- 238000005859 coupling reaction Methods 0.000 claims abstract description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 54
- 229920005591 polysilicon Polymers 0.000 claims description 54
- 238000006243 chemical reaction Methods 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 7
- 230000004044 response Effects 0.000 claims description 2
- 230000003071 parasitic effect Effects 0.000 abstract description 17
- 230000000087 stabilizing effect Effects 0.000 abstract description 2
- 239000004020 conductor Substances 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 238000012544 monitoring process Methods 0.000 description 5
- 229910021332 silicide Inorganic materials 0.000 description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 5
- 230000006870 function Effects 0.000 description 4
- 102100040862 Dual specificity protein kinase CLK1 Human genes 0.000 description 3
- 102100040844 Dual specificity protein kinase CLK2 Human genes 0.000 description 3
- 101000749294 Homo sapiens Dual specificity protein kinase CLK1 Proteins 0.000 description 3
- 101000749291 Homo sapiens Dual specificity protein kinase CLK2 Proteins 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
- H02M3/073—Charge pumps of the Schenkel-type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Abstract
Description
110:変換回路
120:抵抗分圧回路
122:導電部
130:比較回路
140:制御回路
200:基板(ウエル)
210:絶縁領域
220:ポリシリコン層
230、232:誘電体層
240:ポリシリコン層
250:シリサイド層
260−1、260−2:コンタクト
27−1、270−2、272−1、272−2:コンタクト
280:ウエルタップ
Claims (6)
- 入力された電圧を他の電圧レベルに変換し、変換した出力電圧を出力ノードに提供する変換回路と、
前記出力ノードとグランド間に接続され、前記出力電圧に応じた電圧を分圧ノードに生成する抵抗分圧回路と、
前記抵抗分圧回路の前記分圧ノードに生成された電圧と基準電圧とを比較する比較回路と、
前記比較回路の比較結果に基づき前記変換回路を制御する制御回路とを有し、
前記抵抗分圧回路は、少なくとも一部の抵抗を前記出力ノードに容量結合させる容量素子を含み、
前記抵抗は、基板上に形成されている導電性の第1のポリシリコン層を含み、
前記容量素子は、前記出力ノードから少なくとも一部の第1のポリシリコン層上に延在している導電性の第2のポリシリコン層と、第1のポリシリコン層と第2のポリシリコン層との間に形成されている誘電体層とを含み、
第2のポリシリコン層は、少なくとも前記分圧ノードに近接する抵抗部分に前記誘電体層を介して容量結合し、前記近接する抵抗部分は、前記分圧ノードと前記出力ノードとの間に存在する第1の抵抗部分および前記分圧ノードと前記グランドとの間に存在する第2の抵抗部分を有する、電圧生成回路。 - 前記容量素子はさらに、前記基板内の導電性の領域と、第1のポリシリコン層と前記基板内の導電性の領域との間に形成されている別の誘電体層とを含む、請求項1に記載の電圧生成回路。
- 前記変換回路は、チャージポンプ回路を含む、請求項1または2に記載の電圧生成回路。
- 前記変換回路はさらに、前記比較回路の比較結果に基づきクロックイネーブルされるクロック回路を含み、前記チャージポンプ回路は、前記クロック回路からのクロック回路に応答して出力電圧を前記出力ノードに提供する、請求項3に記載の電圧生成回路。
- 請求項1ないし4いずれか1つに記載の電圧生成回路を含む半導体装置。
- 請求項1ないし5いずれか1つに記載の電圧生成回路を含むNAND型のフラッシュメモリであって、
フラッシュメモリのNANDストリングを構成するメモリセルは、前記基板上に形成されているゲート酸化膜と、前記ゲート酸化膜上のフローティングゲート層と、当該フローティング層上の誘電体膜と、当該誘電体膜上のコントロールゲート層とを含み、
前記メモリセルのゲート酸化膜は、前記電圧生成回路の前記別の誘電体層と同じ材料であり、前記フローティングゲート層は、前記電圧生成回路の第1のポリシリコン層と同じ材料であり、前記誘電体膜は、前記電圧生成回路の誘電体層と同じ材料であり、前記コントロールゲート層は、前記電圧生成回路の第2のポリシリコン層と同じ材料である、フラッシュメモリ。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015020498A JP5940691B1 (ja) | 2015-02-04 | 2015-02-04 | 電圧生成回路、半導体装置およびフラッシュメモリ |
TW104124675A TWI567749B (zh) | 2015-02-04 | 2015-07-30 | 電壓產生電路、快閃記憶體及半導體裝置 |
CN201510488786.0A CN105845164B (zh) | 2015-02-04 | 2015-08-11 | 电压产生电路、快闪存储器及半导体装置 |
KR1020150123673A KR20160096005A (ko) | 2015-02-04 | 2015-09-01 | 전압생성회로, 플래시 메모리 및 반도체 장치 |
US15/012,424 US9627963B2 (en) | 2015-02-04 | 2016-02-01 | Voltage generation circuit, flash memory and semiconductor device |
KR1020170082749A KR102233531B1 (ko) | 2015-02-04 | 2017-06-29 | 전압생성회로, 플래시 메모리 및 반도체 장치 |
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JP2015020498A JP5940691B1 (ja) | 2015-02-04 | 2015-02-04 | 電圧生成回路、半導体装置およびフラッシュメモリ |
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JP5940691B1 true JP5940691B1 (ja) | 2016-06-29 |
JP2016144372A JP2016144372A (ja) | 2016-08-08 |
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JP2015020498A Active JP5940691B1 (ja) | 2015-02-04 | 2015-02-04 | 電圧生成回路、半導体装置およびフラッシュメモリ |
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US (1) | US9627963B2 (ja) |
JP (1) | JP5940691B1 (ja) |
KR (2) | KR20160096005A (ja) |
CN (1) | CN105845164B (ja) |
TW (1) | TWI567749B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2022168403A1 (ja) * | 2021-02-03 | 2022-08-11 | ローム株式会社 | 電源装置 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10416242B2 (en) * | 2017-09-08 | 2019-09-17 | Invensense, Inc. | High voltage circuitry with drift mitigation |
US10505521B2 (en) | 2018-01-10 | 2019-12-10 | Ememory Technology Inc. | High voltage driver capable of preventing high voltage stress on transistors |
JP6501325B1 (ja) * | 2018-01-30 | 2019-04-17 | ウィンボンド エレクトロニクス コーポレーション | 半導体記憶装置 |
US10453541B1 (en) * | 2018-08-31 | 2019-10-22 | Micron Technology, Inc. | Capacitive voltage divider for power management |
CN111865073B (zh) * | 2019-04-30 | 2021-10-19 | 合肥格易集成电路有限公司 | 一种pump***的分压反馈电路 |
JP7001636B2 (ja) * | 2019-06-05 | 2022-01-19 | ウィンボンド エレクトロニクス コーポレーション | 電圧生成回路 |
CN113409838B (zh) * | 2021-06-28 | 2023-07-04 | 芯天下技术股份有限公司 | 用于芯片的电压切换方法、装置、电子设备及存储介质 |
Citations (4)
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JP2001237374A (ja) * | 2000-02-25 | 2001-08-31 | Nec Microsystems Ltd | 半導体集積回路 |
JP2008091548A (ja) * | 2006-09-29 | 2008-04-17 | Fujitsu Ltd | 半導体集積回路 |
JP2010259155A (ja) * | 2009-04-21 | 2010-11-11 | Renesas Electronics Corp | 半導体装置 |
JP2012238739A (ja) * | 2011-05-12 | 2012-12-06 | Fujitsu Semiconductor Ltd | 半導体装置 |
Family Cites Families (7)
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US7042044B2 (en) * | 2004-02-18 | 2006-05-09 | Koucheng Wu | Nor-type channel-program channel-erase contactless flash memory on SOI |
KR100764740B1 (ko) * | 2006-05-16 | 2007-10-08 | 삼성전자주식회사 | 플래시 메모리 장치 및 그것을 위한 고전압 발생회로 |
JP2012256821A (ja) * | 2010-09-13 | 2012-12-27 | Semiconductor Energy Lab Co Ltd | 記憶装置 |
JP2012244660A (ja) | 2011-05-16 | 2012-12-10 | Toshiba Corp | 昇圧回路を備えた半導体装置 |
JP5827065B2 (ja) | 2011-08-08 | 2015-12-02 | スパンション エルエルシー | 半導体装置及び分圧回路 |
JP5597655B2 (ja) | 2012-01-30 | 2014-10-01 | 株式会社東芝 | 電圧発生回路及び半導体記憶装置 |
KR20150101305A (ko) * | 2014-02-26 | 2015-09-03 | 윈본드 일렉트로닉스 코포레이션 | 반도체 장치 |
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- 2015-02-04 JP JP2015020498A patent/JP5940691B1/ja active Active
- 2015-07-30 TW TW104124675A patent/TWI567749B/zh active
- 2015-08-11 CN CN201510488786.0A patent/CN105845164B/zh active Active
- 2015-09-01 KR KR1020150123673A patent/KR20160096005A/ko not_active Application Discontinuation
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2016
- 2016-02-01 US US15/012,424 patent/US9627963B2/en active Active
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- 2017-06-29 KR KR1020170082749A patent/KR102233531B1/ko active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001237374A (ja) * | 2000-02-25 | 2001-08-31 | Nec Microsystems Ltd | 半導体集積回路 |
JP2008091548A (ja) * | 2006-09-29 | 2008-04-17 | Fujitsu Ltd | 半導体集積回路 |
JP2010259155A (ja) * | 2009-04-21 | 2010-11-11 | Renesas Electronics Corp | 半導体装置 |
JP2012238739A (ja) * | 2011-05-12 | 2012-12-06 | Fujitsu Semiconductor Ltd | 半導体装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2022168403A1 (ja) * | 2021-02-03 | 2022-08-11 | ローム株式会社 | 電源装置 |
Also Published As
Publication number | Publication date |
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KR102233531B1 (ko) | 2021-03-30 |
TW201629953A (zh) | 2016-08-16 |
TWI567749B (zh) | 2017-01-21 |
JP2016144372A (ja) | 2016-08-08 |
KR20160096005A (ko) | 2016-08-12 |
US9627963B2 (en) | 2017-04-18 |
CN105845164B (zh) | 2019-05-21 |
US20160226377A1 (en) | 2016-08-04 |
KR20170082139A (ko) | 2017-07-13 |
CN105845164A (zh) | 2016-08-10 |
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