JP5926547B2 - 半導体デバイスパッケージ - Google Patents
半導体デバイスパッケージ Download PDFInfo
- Publication number
- JP5926547B2 JP5926547B2 JP2011266379A JP2011266379A JP5926547B2 JP 5926547 B2 JP5926547 B2 JP 5926547B2 JP 2011266379 A JP2011266379 A JP 2011266379A JP 2011266379 A JP2011266379 A JP 2011266379A JP 5926547 B2 JP5926547 B2 JP 5926547B2
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- semiconductor device
- passivation layer
- device package
- dielectric
- package
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- General Physics & Mathematics (AREA)
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- Semiconductor Integrated Circuits (AREA)
Description
第1のパッシベーション層22は、半導体デバイス12のエッジ24をパッシベートし、内部に形成された金属回路/接続パッド16に保護カバーを提供する働きをするが、第1のパッシベーション層22(すなわち、窒化ケイ素/酸化ケイ素のコーティング)は通常、大電圧を保持するには不十分であることは理解される。従って、半導体デバイスパッケージ10はまた、第2のパッシベーション又は誘電層30を含み、第1のパッシベーション層22の上部に施工され、半導体デバイス12のエッジ24を超えて外部に延びており、これらの間に、第2のパッシベーション層30の形態に応じて接着層(図示せず)を任意選択的に含む。図1に示すように、第2のパッシベーション層30は、第1のパッシベーション層22と比べて誘電体材料のより厚い層又はコーティングとして施工され、より高い絶縁耐力を提供し、半導体デバイスパッケージ10の降伏電圧を上昇させるようにする。第2のパッシベーション層30の厚みは、本発明の1つの実施形態によれば、最大で1〜2mmとすることができる。
しかしながら、例えば、図4Cに示す誘電積層体52(及び接着層56)のような、半導体デバイス12のエッジ24に沿って第2のパッシベーション層30の所望のプロファイルを過ぎて外に延びる付加的な誘電積層体もトリミングすることができることは理解される。半導体デバイス12の表面20及びエッジ24の周囲に形成された誘電体材料から何らかの過剰な材料を除去することと同様に、半導体デバイス12のエッジ24に沿って第2のパッシベーション層30の所望のプロファイルを過ぎて外に延びるあらゆる誘電積層体42のトリミングは、半導体デバイス12に付加された誘電体層の残りの部分の所望の形状を得るために実施することができる。従って、図8の実施形態において、ベース誘電積層体42から外にある半導体デバイス12のトリミングは、半導体デバイス12の周囲の第2のパッシベーション層30の全体的な台形形状を維持するようにある角度を付けて実施される。
12 半導体デバイス
14 基板
16 金属接続パッド
18 第1の表面
20 第2の表面
22 第1のパッシベーション層
24 エッジ
28 光学窓
30 第2のパッシベーション層
34 ビア/開口
36 金属相互接続
38 誘電フィルム
Claims (10)
- 半導体デバイスパッケージ(10)であって、
半導体材料から構成される基板(14)と、該基板(14)上に形成された複数の金属接続パッド(16)とを含み、該複数の金属接続パッド(16)が前記基板(14)の対向する第1及び第2の表面(18、20)の各々上に形成されており、前記第1及び第2の表面(18、20)間にエッジ(24)が延びた半導体デバイス(12)と、
前記基板(14)上に形成された複数の金属接続パッド(16)を含む前記半導体デバイス(12)を覆うように、前記半導体デバイス(12)上に施工された第1のパッシベーション層と、
前記半導体デバイス(12)の第1の表面(18)に付加され且つ前記第1のパッシベーション層(22)よりも大きな厚みを有するベース誘電体積層シート(42)と、
前記第1のパッシベーション層(22)よりも大きな厚みを有し且つ前記半導体デバイスの第2の表面(20)及び前記エッジ(24)を覆うように前記第1のパッシベーション層(22)及び前記半導体デバイス(12)の上に施工される第2のパッシベーション層(30)と、
前記半導体デバイス(12)の複数の金属接続パッド(16)に電気的に結合された複数の金属相互接続(36)と、
を備え、前記複数の金属相互接続(36)の各々が、前記第1及び第2のパッシベーション層(22、30)または前記ベース誘電体積層シート(42)を通って形成されるそれぞれのビア(34)を貫通して延びて、前記複数の金属接続パッド(16)のうちの1つと直接金属接続を形成する、半導体デバイスパッケージ(10)。 - 前記第1のパッシベーション層(22)が、窒化ケイ素及び酸化ケイ素のうちの1つを含む、請求項1に記載の半導体デバイスパッケージ(10)。
- 前記第2のパッシベーション層(30)が、前記第1のパッシベーション層(22)並びに前記半導体デバイス(12)の第2の表面及びエッジ(24)の上に施工され、且つ前記半導体デバイス(12)の形状に実質的に一致するように形成された少なくとも1つの誘電体積層シートを含む、請求項1または2に記載の半導体デバイスパッケージ(10)。
- 前記第1のパッシベーション層(22)と前記第2のパッシベーション層(30)との間に位置付けられた接着層を更に備える、請求項3に記載の半導体デバイスパッケージ(10)。
- 前記第2のパッシベーション層(30)が、前記半導体デバイス(12)の形状に実質的に一致するように前記第1のパッシベーション層(22)並びに前記半導体デバイス(12)の第2の表面及びエッジ(24)の上に施工される液体誘電体材料を含む、請求項1乃至4のいずれかに記載の半導体デバイスパッケージ(10)。
- 前記ベース誘電体積層シート(42)に付加され、且つ前記半導体デバイス(12)の周囲を過ぎて外に延びる追加の誘電体積層シート(74)を更に備える、請求項1乃至5のいずれかに記載の半導体デバイスパッケージ(10)。
- 前記複数の金属相互接続(36)が、前記半導体デバイス(12)の周囲を過ぎて前記追加の誘電体積層シート(74)上に延びる、請求項6に記載の半導体デバイスパッケージ(10)。
- 前記半導体デバイス(12)の周囲を過ぎて外に延びた前記追加の誘電体積層シート(74)上に形成される重ね継手(90)を更に備え、前記重ね継手(90)が、別の半導体デバイスパッケージ(94)と前記半導体デバイスパッケージ(10)を結合するよう構成される、請求項6に記載の半導体デバイスパッケージ(10)。
- 前記半導体デバイス(12)が光ダイオードを含み、前記半導体デバイスパッケージ(10)が更に、前記ベース誘電体積層シート(42)及び前記第2のパッシベーション層(30)のうちの1つを通って形成されて、前記光ダイオードの1つの表面を露出させるようにする光学窓(82)を備える、請求項1乃至8のいずれかに記載の半導体デバイスパッケージ(10)。
- 前記第2のパッシベーション層(30)が、前記半導体デバイスパッケージ(10)に対する所望の降伏電圧を提供し且つ前記半導体デバイスパッケージ(10)に対して最小の寄生インダクタンスを更に提供する厚みを有するように構成される、請求項1乃至9のいずれかに記載の半導体デバイスパッケージ(10)。
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