JP5913863B2 - Uv又はeuvリソグラフィ用の光学素子 - Google Patents
Uv又はeuvリソグラフィ用の光学素子 Download PDFInfo
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- JP5913863B2 JP5913863B2 JP2011179057A JP2011179057A JP5913863B2 JP 5913863 B2 JP5913863 B2 JP 5913863B2 JP 2011179057 A JP2011179057 A JP 2011179057A JP 2011179057 A JP2011179057 A JP 2011179057A JP 5913863 B2 JP5913863 B2 JP 5913863B2
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- 230000003287 optical effect Effects 0.000 title claims description 107
- 238000001900 extreme ultraviolet lithography Methods 0.000 title claims description 11
- 238000000576 coating method Methods 0.000 claims description 233
- 239000011248 coating agent Substances 0.000 claims description 213
- 239000000758 substrate Substances 0.000 claims description 58
- 239000000463 material Substances 0.000 claims description 31
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 19
- 238000005286 illumination Methods 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 239000011733 molybdenum Substances 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 6
- 229910001096 P alloy Inorganic materials 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 229910000838 Al alloy Inorganic materials 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims description 4
- 229910001634 calcium fluoride Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 3
- 229910000676 Si alloy Inorganic materials 0.000 claims description 3
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 239000002241 glass-ceramic Substances 0.000 claims description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 2
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 claims description 2
- 230000005855 radiation Effects 0.000 description 14
- 230000000694 effects Effects 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 7
- 210000001747 pupil Anatomy 0.000 description 6
- 229910021486 amorphous silicon dioxide Inorganic materials 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- 238000012937 correction Methods 0.000 description 4
- 238000003384 imaging method Methods 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- 239000006096 absorbing agent Substances 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 230000001627 detrimental effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910002064 alloy oxide Inorganic materials 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- GALOTNBSUVEISR-UHFFFAOYSA-N molybdenum;silicon Chemical compound [Mo]#[Si] GALOTNBSUVEISR-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000009304 pastoral farming Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000005469 synchrotron radiation Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0275—Photolithographic processes using lasers
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Optical Elements Other Than Lenses (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Description
2 プラズマ
3 レーザ
4 中間焦点
5 絞り
6 赤外放射線
7 UV放射線
8 EUV放射線
11 照明システム
12 折り返しミラー
13 レチクル
16 視野ファセットミラー
17 瞳ファセットミラー
18、19 ファセット
30 光学素子
31 基板
32 第1の表面
33 第2の表面
34 第3の表面
35 縁部
36 機能性コーティング
37 研磨可能コーティング
38 光学有効コーティング
40 光学素子
41 基板
42 第1の表面
43 第2の表面
44 第3の表面
45 縁部
46 機能性コーティング
47 第2のコーティング
48 第3のコーティング
60 ミラーセグメントアレイ
61 ミラーセグメント
62 取り付けタブ
63 側面コーティング
70 上面
71、72 側面
100 リソグラフィ装置
102 レーザ源
104 コンデンサレンズ
106 プラズマ
108 入口
110 コレクタミラー
111 絞り
112 ミラー
114 視野ファセットミラー
116 瞳ファセットミラー
118 ミラー
120 ミラー
122 平面ミラー
124 レチクル
126 走査方向
128 投影対物レンズ
130 ウェーハ
Claims (17)
- 基板の第1の表面上に機能性コーティングを備え、前記基板は前記第1の表面と共通の縁部を有し且つコーティングを備える第2の表面を備える、UV又はEUVリソグラフィ用の光学素子であって、前記第2の表面(33、43)上の前記コーティング(47)の厚さt2及び応力σ2を、前記第1の表面(32、42)上の前記機能性コーティング(36、46)の厚さt1及び応力σ1と組み合わせて条件t1・σ1/t2・σ2=Xを満足し、式中、Xが1.2〜3.0の値を有するよう選択したことを特徴とする、光学素子。
- 請求項1に記載の光学素子において、前記機能性コーティング(36、46)は、光学有効コーティング及び/又は研磨可能コーティングとして構成したことを特徴とする、光学素子。
- 請求項1又は2に記載の光学素子において、前記第1の表面(32、42)上の前記機能性コーティング(36、46)及び/又は前記第2の表面(33、43)上の前記コーティング(47)は、前記共通の縁部(35、45)まで延びる、光学素子。
- 請求項1〜3のいずれか1項に記載の光学素子において、前記第2の表面(33、43)上の前記コーティング(47)の材料及び/又は厚さは、引張応力又は圧縮応力がそれぞれ前記第1の表面(32、42)上の前記機能性コーティング(36、46)及び前記第2の表面(33、43)上の前記コーティング(47)の両方に存在する、光学素子。
- 請求項1〜4のいずれか1項に記載の光学素子において、Xは、1.4〜1.8の値を有する、光学素子。
- 請求項1〜5のいずれか1項に記載の光学素子において、前記第2の表面(33、43)上の前記コーティング(47)の応力σ2は、前記第1の表面(32、42)上の前記機能性コーティング(36、46)の応力σ1と等しくすることにより、条件t1/t2=Xを満足する、光学素子。
- 請求項1〜6のいずれか1項に記載の光学素子において、前記基板(31、41)は、前記第1の表面(32、42)の反対側に第3の表面(34、44)を有し、該第3の表面(33、44)は、コーティング(48)を備える、光学素子。
- 請求項7に記載の光学素子において、前記第3の表面上の前記コーティングの厚さt3及び応力σ3は、前記第3の表面(33、44)上の前記コーティング(48)の厚さt3及び応力σ3の積が前記第1の表面(32、42)上の前記機能性コーティング(36、46)の厚さt1及び応力σ1の積と等しい、光学素子。
- 請求項1〜8のいずれか1項に記載の光学素子において、前記機能性コーティング(36、46)及び前記第2の表面(33、43)上の前記コーティング(47)の両方の熱膨張係数は、前記基板(31、41)の熱膨張係数よりも大きい、光学素子。
- 請求項1〜8のいずれか1項に記載の光学素子において、前記機能性コーティング及び前記第2の表面(33、43)上の前記コーティング(47)の両方の熱膨張係数は、前記基板(31、41)の熱膨張係数よりも小さい、光学素子。
- 請求項1〜8のいずれか1項に記載の光学素子において、前記第2の表面(33、43)上の前記コーティング(47)の熱膨張係数は、前記基板(31、41)の熱膨張係数とほぼ等しい、光学素子。
- 請求項1〜8及び11のいずれか1項に記載の光学素子において、前記第2の表面(33、43)上の前記コーティング(47)の熱膨張係数は、前記基板(31、41)の熱膨張係数と同符号を有する、光学素子。
- 請求項1〜12のいずれか1項に記載の光学素子において、前記第2の表面(33、43)上の前記コーティング(47)は、アモルファスシリコン、ニッケル−リン合金、ダイヤモンド状炭素、モリブデン、二酸化ケイ素からなる群からの1つ又は複数の材料を含む、光学素子。
- 請求項1〜13のいずれか1項に記載の光学素子において、前記基板(31、41)は、銅、銅合金、アルミニウム、アルミニウム合金、アルミニウム−ケイ素合金、石英ガラス、ドープ石英ガラス、チタンドープ石英ガラス、ガラスセラミック、フッ化カルシウム、炭化ケイ素、シリコン−炭化ケイ素、シリコンからなる群からの材料でできている、光学素子。
- 請求項1〜14のいずれか1項に記載の光学素子において、該光学素子は、ファセットミラー(16、17、114、116)のファセット(18、19)として又はミラーセグメントアレイ(60)のミラーセグメント(61)として形成した、光学素子。
- 請求項1〜15のいずれか1項に記載の光学素子を有するUV又はEUVリソグラフィ装置用の照明システム。
- 請求項1〜15のいずれか1項に記載の光学素子を備える、紫外又は極紫外波長範囲用のリソグラフィ装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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DE102010039496 | 2010-08-19 | ||
DE102010039496.3 | 2010-08-19 |
Publications (2)
Publication Number | Publication Date |
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JP2012069925A JP2012069925A (ja) | 2012-04-05 |
JP5913863B2 true JP5913863B2 (ja) | 2016-04-27 |
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JP2011179057A Active JP5913863B2 (ja) | 2010-08-19 | 2011-08-18 | Uv又はeuvリソグラフィ用の光学素子 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8848167B2 (ja) |
JP (1) | JP5913863B2 (ja) |
KR (1) | KR101288782B1 (ja) |
DE (1) | DE102011079933A1 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
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DE102011002953A1 (de) * | 2011-01-21 | 2012-07-26 | Carl Zeiss Smt Gmbh | Substrat für Spiegel für die EUV-Lithographie |
DE102011003077A1 (de) * | 2011-01-25 | 2012-07-26 | Carl Zeiss Smt Gmbh | Verfahren zur Herstellung eines Substrates für ein reflektives optisches Element für die EUV-Lithographie |
DE102011076549A1 (de) * | 2011-05-26 | 2012-11-29 | Carl Zeiss Smt Gmbh | Optische Anordnung in einer mikrolithographischen Projektionsbelichtungsanlage |
DE102013215541A1 (de) | 2013-08-07 | 2015-02-12 | Carl Zeiss Smt Gmbh | Spiegel, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage |
JP2016530517A (ja) * | 2013-08-14 | 2016-09-29 | ディーエイチ テクノロジーズ デベロップメント プライベート リミテッド | イオン移動度の方法及び装置 |
JP6571092B2 (ja) * | 2013-09-25 | 2019-09-04 | エーエスエムエル ネザーランズ ビー.ブイ. | ビームデリバリ装置及び方法 |
DE102014219755A1 (de) * | 2013-10-30 | 2015-04-30 | Carl Zeiss Smt Gmbh | Reflektives optisches Element |
DE102015105058A1 (de) | 2015-04-01 | 2016-10-06 | Endress+Hauser Flowtec Ag | Strömungsgleichrichter |
DE102016110351B4 (de) * | 2016-06-03 | 2019-08-29 | Carl Zeiss Meditec Ag | Verfahren zur Herstellung eines optischen Elements |
US11619764B2 (en) * | 2020-03-27 | 2023-04-04 | Raytheon Company | High-performance optical surface |
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US7678511B2 (en) * | 2006-01-12 | 2010-03-16 | Asahi Glass Company, Limited | Reflective-type mask blank for EUV lithography |
JP2007241018A (ja) * | 2006-03-10 | 2007-09-20 | Epson Toyocom Corp | 全反射ミラー |
EP2087510A4 (en) * | 2006-11-27 | 2010-05-05 | Nikon Corp | OPTICAL ELEMENT, ASSOCIATED EXPOSURE UNIT AND METHOD FOR PRODUCING THE DEVICE |
DE102008042212A1 (de) | 2008-09-19 | 2010-04-01 | Carl Zeiss Smt Ag | Reflektives optisches Element und Verfahren zu seiner Herstellung |
DE102009029776B3 (de) | 2009-06-18 | 2010-12-02 | Carl Zeiss Smt Ag | Optisches Element |
DE102009040785A1 (de) | 2009-09-09 | 2011-03-10 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Substrat aus einer Aluminium-Silizium-Legierung oder kristallinem Silizium, Metallspiegel, Verfahren zu dessen Herstellung sowie dessen Verwendung |
DE102011076549A1 (de) | 2011-05-26 | 2012-11-29 | Carl Zeiss Smt Gmbh | Optische Anordnung in einer mikrolithographischen Projektionsbelichtungsanlage |
-
2011
- 2011-07-27 DE DE102011079933A patent/DE102011079933A1/de not_active Withdrawn
- 2011-08-12 US US13/208,823 patent/US8848167B2/en active Active
- 2011-08-18 KR KR1020110082121A patent/KR101288782B1/ko active IP Right Grant
- 2011-08-18 JP JP2011179057A patent/JP5913863B2/ja active Active
Also Published As
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US20120044473A1 (en) | 2012-02-23 |
KR20120018085A (ko) | 2012-02-29 |
US8848167B2 (en) | 2014-09-30 |
DE102011079933A1 (de) | 2012-02-23 |
KR101288782B1 (ko) | 2013-07-22 |
JP2012069925A (ja) | 2012-04-05 |
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