JP5902116B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5902116B2 JP5902116B2 JP2013061334A JP2013061334A JP5902116B2 JP 5902116 B2 JP5902116 B2 JP 5902116B2 JP 2013061334 A JP2013061334 A JP 2013061334A JP 2013061334 A JP2013061334 A JP 2013061334A JP 5902116 B2 JP5902116 B2 JP 5902116B2
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- 239000004065 semiconductor Substances 0.000 title claims description 52
- 230000002093 peripheral effect Effects 0.000 claims description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 9
- 229920005591 polysilicon Polymers 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims 1
- 239000012212 insulator Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 description 15
- 230000015556 catabolic process Effects 0.000 description 10
- 239000000758 substrate Substances 0.000 description 7
- 125000004437 phosphorous atom Chemical group 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- -1 boron ions Chemical class 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66727—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the source electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Description
本発明のいくつかの実施の形態を説明したが、これらの実施の形態は、例として提示したものであり、発明の範囲を限定することは意図していない。これら新規な実施の形態は、その他の様々な形態で実施されることが可能であり、発明の要旨を逸脱しない範囲で、種々の省略、置き換え、変更を行うことができる。これら実施の形態やその変形は、発明の範囲や要旨に含まれるとともに、特許請求の範囲に記載された発明とその均等の範囲に含まれる。
Claims (5)
- 半導体素子が形成される素子領域、及び前記素子領域を挟む周辺領域を備え、
前記周辺領域は、
半導体層の第1位置から前記第1位置より上方の第2位置まで形成された第1絶縁層と、
前記半導体層の前記第2位置から前記第2位置より上方の第3位置まで形成されると共に、前記第1絶縁層よりも薄く且つ前記第1絶縁層の内径よりも大きい内径を有する第2絶縁層と、
前記第1絶縁層及び前記第2絶縁層の内側に設けられ、前記第2位置より上方に設けられた凹部を有するフィールドプレート電極と、
前記凹部に設けられ、前記フィールドプレート電極とは異なる材料により構成された第1の層と
を備えることを特徴とする半導体装置。 - 前記フィールドプレート電極は、ポリシリコンにより構成される
ことを特徴とする請求項1記載の半導体装置。 - 前記第1の層は、絶縁物により構成される
ことを特徴とする請求項1又は請求項2記載の半導体装置。 - 前記第1の層は、金属により構成される
ことを特徴とする請求項1又は請求項2記載の半導体装置。 - 前記半導体素子は、MOSFETである
ことを特徴とする請求項1乃至請求項4のいずれか1項記載の半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013061334A JP5902116B2 (ja) | 2013-03-25 | 2013-03-25 | 半導体装置 |
CN201310322233.9A CN104078503A (zh) | 2013-03-25 | 2013-07-29 | 半导体装置 |
US14/017,231 US8981462B2 (en) | 2013-03-25 | 2013-09-03 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013061334A JP5902116B2 (ja) | 2013-03-25 | 2013-03-25 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014187226A JP2014187226A (ja) | 2014-10-02 |
JP5902116B2 true JP5902116B2 (ja) | 2016-04-13 |
Family
ID=51568531
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013061334A Active JP5902116B2 (ja) | 2013-03-25 | 2013-03-25 | 半導体装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8981462B2 (ja) |
JP (1) | JP5902116B2 (ja) |
CN (1) | CN104078503A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11575039B2 (en) | 2020-03-19 | 2023-02-07 | Kabushiki Kaisha Toshiba | Semiconductor device |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10395970B2 (en) | 2013-12-05 | 2019-08-27 | Vishay-Siliconix | Dual trench structure |
US11257944B2 (en) | 2015-04-27 | 2022-02-22 | Rohm Co., Ltd. | Semiconductor device and semiconductor device manufacturing method |
US9673314B2 (en) * | 2015-07-08 | 2017-06-06 | Vishay-Siliconix | Semiconductor device with non-uniform trench oxide layer |
US9711391B1 (en) | 2016-01-20 | 2017-07-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
TWI697092B (zh) * | 2016-08-08 | 2020-06-21 | 聯華電子股份有限公司 | 半導體靜電放電保護電路、半導體靜電放電保護元件及其佈局結構 |
WO2018060918A1 (en) * | 2016-09-28 | 2018-04-05 | Ecole Polytechnique Federale De Lausanne (Epfl) | Semiconductor device comprising a three-dimensional field plate |
JP6626021B2 (ja) * | 2017-02-15 | 2019-12-25 | トヨタ自動車株式会社 | 窒化物半導体装置 |
CN107221500A (zh) * | 2017-05-10 | 2017-09-29 | 无锡同方微电子有限公司 | 双沟槽场效应管及其制备方法 |
KR20200075287A (ko) * | 2018-12-18 | 2020-06-26 | 삼성전기주식회사 | 커패시터 부품 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4398339A (en) * | 1977-04-15 | 1983-08-16 | Supertex, Inc. | Fabrication method for high power MOS device |
US5225698A (en) * | 1989-08-12 | 1993-07-06 | Samsung Electronics Co., Inc. | Semi-conductor device with stacked trench capacitor |
JPH07131010A (ja) | 1993-11-05 | 1995-05-19 | Yokogawa Electric Corp | 半導体集積回路 |
US6586833B2 (en) | 2000-11-16 | 2003-07-01 | Silicon Semiconductor Corporation | Packaged power devices having vertical power mosfets therein that are flip-chip mounted to slotted gate electrode strip lines |
JP2002158355A (ja) | 2000-11-20 | 2002-05-31 | Nec Kansai Ltd | 半導体装置およびその製造方法 |
JP4051971B2 (ja) * | 2002-03-15 | 2008-02-27 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
US7371641B2 (en) * | 2004-10-29 | 2008-05-13 | International Rectifier Corporation | Method of making a trench MOSFET with deposited oxide |
JP4930894B2 (ja) * | 2005-05-13 | 2012-05-16 | サンケン電気株式会社 | 半導体装置 |
JP2007129134A (ja) | 2005-11-07 | 2007-05-24 | Nec Corp | 電界効果トランジスタ |
JP5569162B2 (ja) | 2010-06-10 | 2014-08-13 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP5627494B2 (ja) | 2011-02-09 | 2014-11-19 | 株式会社東芝 | 半導体装置およびその製造方法 |
US8823087B2 (en) * | 2012-03-15 | 2014-09-02 | Infineon Technologies Austria Ag | Semiconductor device including auxiliary structure and methods for manufacturing a semiconductor device |
-
2013
- 2013-03-25 JP JP2013061334A patent/JP5902116B2/ja active Active
- 2013-07-29 CN CN201310322233.9A patent/CN104078503A/zh active Pending
- 2013-09-03 US US14/017,231 patent/US8981462B2/en active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11575039B2 (en) | 2020-03-19 | 2023-02-07 | Kabushiki Kaisha Toshiba | Semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
CN104078503A (zh) | 2014-10-01 |
US20140284700A1 (en) | 2014-09-25 |
JP2014187226A (ja) | 2014-10-02 |
US8981462B2 (en) | 2015-03-17 |
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