JP5890633B2 - Composition for organic thin film transistor insulating layer and organic thin film transistor - Google Patents
Composition for organic thin film transistor insulating layer and organic thin film transistor Download PDFInfo
- Publication number
- JP5890633B2 JP5890633B2 JP2011185734A JP2011185734A JP5890633B2 JP 5890633 B2 JP5890633 B2 JP 5890633B2 JP 2011185734 A JP2011185734 A JP 2011185734A JP 2011185734 A JP2011185734 A JP 2011185734A JP 5890633 B2 JP5890633 B2 JP 5890633B2
- Authority
- JP
- Japan
- Prior art keywords
- group
- film transistor
- organic thin
- formula
- insulating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010409 thin film Substances 0.000 title claims description 97
- 239000000203 mixture Substances 0.000 title claims description 59
- 229910052731 fluorine Inorganic materials 0.000 claims description 63
- 125000004432 carbon atom Chemical group C* 0.000 claims description 59
- 125000000962 organic group Chemical group 0.000 claims description 57
- 125000001153 fluoro group Chemical group F* 0.000 claims description 44
- 150000001875 compounds Chemical class 0.000 claims description 39
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 38
- 125000000524 functional group Chemical group 0.000 claims description 34
- 239000002981 blocking agent Substances 0.000 claims description 29
- 239000004065 semiconductor Substances 0.000 claims description 29
- 239000002904 solvent Substances 0.000 claims description 27
- 239000011737 fluorine Substances 0.000 claims description 20
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 19
- 150000004292 cyclic ethers Chemical group 0.000 claims description 17
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 14
- 239000001257 hydrogen Substances 0.000 claims description 14
- 229910052739 hydrogen Inorganic materials 0.000 claims description 14
- 125000001261 isocyanato group Chemical group *N=C=O 0.000 claims description 13
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 12
- 125000004434 sulfur atom Chemical group 0.000 claims description 10
- 125000001810 isothiocyanato group Chemical group *N=C=S 0.000 claims description 9
- 229910052717 sulfur Inorganic materials 0.000 claims description 9
- 125000002947 alkylene group Chemical group 0.000 claims description 8
- 229910052801 chlorine Inorganic materials 0.000 claims description 6
- 125000001309 chloro group Chemical group Cl* 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 2
- 150000002221 fluorine Chemical class 0.000 claims 1
- 239000010410 layer Substances 0.000 description 115
- -1 cyclopentynyl group Chemical group 0.000 description 82
- 239000000178 monomer Substances 0.000 description 30
- 239000003505 polymerization initiator Substances 0.000 description 17
- 239000000243 solution Substances 0.000 description 16
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 14
- 239000000758 substrate Substances 0.000 description 14
- 239000010408 film Substances 0.000 description 13
- 229920000642 polymer Polymers 0.000 description 13
- 150000002430 hydrocarbons Chemical group 0.000 description 12
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 11
- 230000005669 field effect Effects 0.000 description 11
- 238000000034 method Methods 0.000 description 11
- 239000002994 raw material Substances 0.000 description 11
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 9
- 238000010538 cationic polymerization reaction Methods 0.000 description 9
- 238000000576 coating method Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 125000003277 amino group Chemical group 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 8
- 125000000217 alkyl group Chemical group 0.000 description 7
- 239000012298 atmosphere Substances 0.000 description 7
- 125000000753 cycloalkyl group Chemical group 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 150000002894 organic compounds Chemical class 0.000 description 7
- SXPRVMIZFRCAGC-UHFFFAOYSA-N 1,2,3,4,5-pentafluoro-6-methylbenzene Chemical compound CC1=C(F)C(F)=C(F)C(F)=C1F SXPRVMIZFRCAGC-UHFFFAOYSA-N 0.000 description 6
- UZKWTJUDCOPSNM-UHFFFAOYSA-N 1-ethenoxybutane Chemical compound CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 125000001931 aliphatic group Chemical group 0.000 description 6
- 150000001735 carboxylic acids Chemical class 0.000 description 6
- 229940125904 compound 1 Drugs 0.000 description 6
- 150000002148 esters Chemical class 0.000 description 6
- 239000003999 initiator Substances 0.000 description 6
- KWKAKUADMBZCLK-UHFFFAOYSA-N 1-octene Chemical group CCCCCCC=C KWKAKUADMBZCLK-UHFFFAOYSA-N 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 229940125782 compound 2 Drugs 0.000 description 5
- 125000004122 cyclic group Chemical group 0.000 description 5
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 5
- ZBKFYXZXZJPWNQ-UHFFFAOYSA-N isothiocyanate group Chemical group [N-]=C=S ZBKFYXZXZJPWNQ-UHFFFAOYSA-N 0.000 description 5
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 238000006116 polymerization reaction Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 238000003786 synthesis reaction Methods 0.000 description 5
- VXNZUUAINFGPBY-UHFFFAOYSA-N 1-Butene Chemical compound CCC=C VXNZUUAINFGPBY-UHFFFAOYSA-N 0.000 description 4
- LIKMAJRDDDTEIG-UHFFFAOYSA-N 1-hexene Chemical compound CCCCC=C LIKMAJRDDDTEIG-UHFFFAOYSA-N 0.000 description 4
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 4
- GYCMBHHDWRMZGG-UHFFFAOYSA-N Methylacrylonitrile Chemical compound CC(=C)C#N GYCMBHHDWRMZGG-UHFFFAOYSA-N 0.000 description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 4
- XXROGKLTLUQVRX-UHFFFAOYSA-N allyl alcohol Chemical compound OCC=C XXROGKLTLUQVRX-UHFFFAOYSA-N 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 4
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 4
- SUPCQIBBMFXVTL-UHFFFAOYSA-N ethyl 2-methylprop-2-enoate Chemical compound CCOC(=O)C(C)=C SUPCQIBBMFXVTL-UHFFFAOYSA-N 0.000 description 4
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 4
- YWAKXRMUMFPDSH-UHFFFAOYSA-N pentene Chemical compound CCCC=C YWAKXRMUMFPDSH-UHFFFAOYSA-N 0.000 description 4
- 125000001424 substituent group Chemical group 0.000 description 4
- 238000012719 thermal polymerization Methods 0.000 description 4
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 4
- 229930195735 unsaturated hydrocarbon Natural products 0.000 description 4
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 3
- FNYWFRSQRHGKJT-UHFFFAOYSA-N 3-ethyl-3-[(3-ethyloxetan-3-yl)methoxymethyl]oxetane Chemical compound C1OCC1(CC)COCC1(CC)COC1 FNYWFRSQRHGKJT-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 3
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical class C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 3
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Natural products CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 125000005397 methacrylic acid ester group Chemical group 0.000 description 3
- 125000001570 methylene group Chemical group [H]C([H])([*:1])[*:2] 0.000 description 3
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 150000002923 oximes Chemical class 0.000 description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 description 3
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 3
- 229920002554 vinyl polymer Polymers 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- SKYXLDSRLNRAPS-UHFFFAOYSA-N 1,2,4-trifluoro-5-methoxybenzene Chemical compound COC1=CC(F)=C(F)C=C1F SKYXLDSRLNRAPS-UHFFFAOYSA-N 0.000 description 2
- MYRTYDVEIRVNKP-UHFFFAOYSA-N 1,2-Divinylbenzene Chemical compound C=CC1=CC=CC=C1C=C MYRTYDVEIRVNKP-UHFFFAOYSA-N 0.000 description 2
- UAJRSHJHFRVGMG-UHFFFAOYSA-N 1-ethenyl-4-methoxybenzene Chemical compound COC1=CC=C(C=C)C=C1 UAJRSHJHFRVGMG-UHFFFAOYSA-N 0.000 description 2
- OGMSGZZPTQNTIK-UHFFFAOYSA-N 1-methyl-2-prop-1-en-2-ylbenzene Chemical compound CC(=C)C1=CC=CC=C1C OGMSGZZPTQNTIK-UHFFFAOYSA-N 0.000 description 2
- XXTQHVKTTBLFRI-UHFFFAOYSA-N 1-methyl-3-prop-1-en-2-ylbenzene Chemical compound CC(=C)C1=CC=CC(C)=C1 XXTQHVKTTBLFRI-UHFFFAOYSA-N 0.000 description 2
- RBGUKBSLNOTVCD-UHFFFAOYSA-N 1-methylanthracene-9,10-dione Chemical compound O=C1C2=CC=CC=C2C(=O)C2=C1C=CC=C2C RBGUKBSLNOTVCD-UHFFFAOYSA-N 0.000 description 2
- XLPJNCYCZORXHG-UHFFFAOYSA-N 1-morpholin-4-ylprop-2-en-1-one Chemical compound C=CC(=O)N1CCOCC1 XLPJNCYCZORXHG-UHFFFAOYSA-N 0.000 description 2
- OVSKIKFHRZPJSS-UHFFFAOYSA-N 2,4-D Chemical compound OC(=O)COC1=CC=C(Cl)C=C1Cl OVSKIKFHRZPJSS-UHFFFAOYSA-N 0.000 description 2
- XMNIXWIUMCBBBL-UHFFFAOYSA-N 2-(2-phenylpropan-2-ylperoxy)propan-2-ylbenzene Chemical compound C=1C=CC=CC=1C(C)(C)OOC(C)(C)C1=CC=CC=C1 XMNIXWIUMCBBBL-UHFFFAOYSA-N 0.000 description 2
- LEJBBGNFPAFPKQ-UHFFFAOYSA-N 2-(2-prop-2-enoyloxyethoxy)ethyl prop-2-enoate Chemical compound C=CC(=O)OCCOCCOC(=O)C=C LEJBBGNFPAFPKQ-UHFFFAOYSA-N 0.000 description 2
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 2
- XFCMNSHQOZQILR-UHFFFAOYSA-N 2-[2-(2-methylprop-2-enoyloxy)ethoxy]ethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCOCCOC(=O)C(C)=C XFCMNSHQOZQILR-UHFFFAOYSA-N 0.000 description 2
- INQDDHNZXOAFFD-UHFFFAOYSA-N 2-[2-(2-prop-2-enoyloxyethoxy)ethoxy]ethyl prop-2-enoate Chemical compound C=CC(=O)OCCOCCOCCOC(=O)C=C INQDDHNZXOAFFD-UHFFFAOYSA-N 0.000 description 2
- GJYCVCVHRSWLNY-UHFFFAOYSA-N 2-butylphenol Chemical compound CCCCC1=CC=CC=C1O GJYCVCVHRSWLNY-UHFFFAOYSA-N 0.000 description 2
- JESXATFQYMPTNL-UHFFFAOYSA-N 2-ethenylphenol Chemical compound OC1=CC=CC=C1C=C JESXATFQYMPTNL-UHFFFAOYSA-N 0.000 description 2
- YIWUKEYIRIRTPP-UHFFFAOYSA-N 2-ethylhexan-1-ol Chemical compound CCCCC(CC)CO YIWUKEYIRIRTPP-UHFFFAOYSA-N 0.000 description 2
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 2
- GYUPEJSTJSFVRR-UHFFFAOYSA-N 3,3,4,4,5,5,6,6,6-nonafluorohexyl prop-2-enoate Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)CCOC(=O)C=C GYUPEJSTJSFVRR-UHFFFAOYSA-N 0.000 description 2
- UJOBWOGCFQCDNV-UHFFFAOYSA-N 9H-carbazole Chemical compound C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 2
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 description 2
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical class S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 2
- GUUVPOWQJOLRAS-UHFFFAOYSA-N Diphenyl disulfide Chemical compound C=1C=CC=CC=1SSC1=CC=CC=C1 GUUVPOWQJOLRAS-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- PEEHTFAAVSWFBL-UHFFFAOYSA-N Maleimide Chemical compound O=C1NC(=O)C=C1 PEEHTFAAVSWFBL-UHFFFAOYSA-N 0.000 description 2
- LSDPWZHWYPCBBB-UHFFFAOYSA-N Methanethiol Chemical class SC LSDPWZHWYPCBBB-UHFFFAOYSA-N 0.000 description 2
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical compound COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- FZERHIULMFGESH-UHFFFAOYSA-N N-phenylacetamide Chemical compound CC(=O)NC1=CC=CC=C1 FZERHIULMFGESH-UHFFFAOYSA-N 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 2
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 2
- 125000005396 acrylic acid ester group Chemical group 0.000 description 2
- 238000007259 addition reaction Methods 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical compound COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 description 2
- 125000005428 anthryl group Chemical group [H]C1=C([H])C([H])=C2C([H])=C3C(*)=C([H])C([H])=C([H])C3=C([H])C2=C1[H] 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 150000001491 aromatic compounds Chemical class 0.000 description 2
- ISAOCJYIOMOJEB-UHFFFAOYSA-N benzoin Chemical compound C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 description 2
- 125000004799 bromophenyl group Chemical group 0.000 description 2
- WQAQPCDUOCURKW-UHFFFAOYSA-N butanethiol Chemical compound CCCCS WQAQPCDUOCURKW-UHFFFAOYSA-N 0.000 description 2
- 125000004112 carboxyamino group Chemical group [H]OC(=O)N([H])[*] 0.000 description 2
- 125000000068 chlorophenyl group Chemical group 0.000 description 2
- 125000001995 cyclobutyl group Chemical group [H]C1([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 2
- VEZUQRBDRNJBJY-UHFFFAOYSA-N cyclohexanone oxime Chemical compound ON=C1CCCCC1 VEZUQRBDRNJBJY-UHFFFAOYSA-N 0.000 description 2
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 2
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 2
- 125000001559 cyclopropyl group Chemical group [H]C1([H])C([H])([H])C1([H])* 0.000 description 2
- 238000007607 die coating method Methods 0.000 description 2
- DMBHHRLKUKUOEG-UHFFFAOYSA-N diphenylamine Chemical compound C=1C=CC=CC=1NC1=CC=CC=C1 DMBHHRLKUKUOEG-UHFFFAOYSA-N 0.000 description 2
- JBKVHLHDHHXQEQ-UHFFFAOYSA-N epsilon-caprolactam Chemical compound O=C1CCCCCN1 JBKVHLHDHHXQEQ-UHFFFAOYSA-N 0.000 description 2
- UYMKPFRHYYNDTL-UHFFFAOYSA-N ethenamine Chemical class NC=C UYMKPFRHYYNDTL-UHFFFAOYSA-N 0.000 description 2
- FJKIXWOMBXYWOQ-UHFFFAOYSA-N ethenoxyethane Chemical compound CCOC=C FJKIXWOMBXYWOQ-UHFFFAOYSA-N 0.000 description 2
- LDLDYFCCDKENPD-UHFFFAOYSA-N ethenylcyclohexane Chemical compound C=CC1CCCCC1 LDLDYFCCDKENPD-UHFFFAOYSA-N 0.000 description 2
- 125000000816 ethylene group Chemical group [H]C([H])([*:1])C([H])([H])[*:2] 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 239000001530 fumaric acid Substances 0.000 description 2
- 150000002291 germanium compounds Chemical class 0.000 description 2
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 2
- ZQBFAOFFOQMSGJ-UHFFFAOYSA-N hexafluorobenzene Chemical compound FC1=C(F)C(F)=C(F)C(F)=C1F ZQBFAOFFOQMSGJ-UHFFFAOYSA-N 0.000 description 2
- 125000004836 hexamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 description 2
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical class I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 2
- 150000002466 imines Chemical class 0.000 description 2
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 2
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 2
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 2
- 239000011976 maleic acid Substances 0.000 description 2
- 150000002734 metacrylic acid derivatives Chemical class 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- TVMXDCGIABBOFY-UHFFFAOYSA-N n-Octanol Natural products CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 2
- 125000001624 naphthyl group Chemical group 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- IXQGCWUGDFDQMF-UHFFFAOYSA-N o-Hydroxyethylbenzene Natural products CCC1=CC=CC=C1O IXQGCWUGDFDQMF-UHFFFAOYSA-N 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- AHHWIHXENZJRFG-UHFFFAOYSA-N oxetane Chemical compound C1COC1 AHHWIHXENZJRFG-UHFFFAOYSA-N 0.000 description 2
- 125000003566 oxetanyl group Chemical group 0.000 description 2
- MMSLOZQEMPDGPI-UHFFFAOYSA-N p-Mentha-1,3,5,8-tetraene Chemical compound CC(=C)C1=CC=C(C)C=C1 MMSLOZQEMPDGPI-UHFFFAOYSA-N 0.000 description 2
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 2
- 150000002978 peroxides Chemical class 0.000 description 2
- 150000002989 phenols Chemical class 0.000 description 2
- XUWHAWMETYGRKB-UHFFFAOYSA-N piperidin-2-one Chemical compound O=C1CCCCN1 XUWHAWMETYGRKB-UHFFFAOYSA-N 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 150000003217 pyrazoles Chemical class 0.000 description 2
- UBQKCCHYAOITMY-UHFFFAOYSA-N pyridin-2-ol Chemical compound OC1=CC=CC=N1 UBQKCCHYAOITMY-UHFFFAOYSA-N 0.000 description 2
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 2
- 238000007142 ring opening reaction Methods 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 150000003440 styrenes Chemical class 0.000 description 2
- KZNICNPSHKQLFF-UHFFFAOYSA-N succinimide Chemical compound O=C1CCC(=O)N1 KZNICNPSHKQLFF-UHFFFAOYSA-N 0.000 description 2
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 2
- 125000003944 tolyl group Chemical group 0.000 description 2
- 150000003672 ureas Chemical class 0.000 description 2
- 229920001567 vinyl ester resin Polymers 0.000 description 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 2
- 125000005023 xylyl group Chemical group 0.000 description 2
- LWNGJAHMBMVCJR-UHFFFAOYSA-N (2,3,4,5,6-pentafluorophenoxy)boronic acid Chemical compound OB(O)OC1=C(F)C(F)=C(F)C(F)=C1F LWNGJAHMBMVCJR-UHFFFAOYSA-N 0.000 description 1
- WRXCBRHBHGNNQA-UHFFFAOYSA-N (2,4-dichlorobenzoyl) 2,4-dichlorobenzenecarboperoxoate Chemical compound ClC1=CC(Cl)=CC=C1C(=O)OOC(=O)C1=CC=C(Cl)C=C1Cl WRXCBRHBHGNNQA-UHFFFAOYSA-N 0.000 description 1
- ZICNIEOYWVIEQJ-UHFFFAOYSA-N (2-methylbenzoyl) 2-methylbenzenecarboperoxoate Chemical compound CC1=CC=CC=C1C(=O)OOC(=O)C1=CC=CC=C1C ZICNIEOYWVIEQJ-UHFFFAOYSA-N 0.000 description 1
- HGXJDMCMYLEZMJ-UHFFFAOYSA-N (2-methylpropan-2-yl)oxy 2,2-dimethylpropaneperoxoate Chemical compound CC(C)(C)OOOC(=O)C(C)(C)C HGXJDMCMYLEZMJ-UHFFFAOYSA-N 0.000 description 1
- KDGNCLDCOVTOCS-UHFFFAOYSA-N (2-methylpropan-2-yl)oxy propan-2-yl carbonate Chemical compound CC(C)OC(=O)OOC(C)(C)C KDGNCLDCOVTOCS-UHFFFAOYSA-N 0.000 description 1
- DCXZWVLJCYXHDV-UHFFFAOYSA-N (4,4,5,5,6,6,7,7,8,8,9,9,10,10,11,11,11-heptadecafluoro-2-hydroxyundecyl) 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC(O)CC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F DCXZWVLJCYXHDV-UHFFFAOYSA-N 0.000 description 1
- DAEIFBGPFDVHNR-UHFFFAOYSA-N (4,4,5,5,6,6,7,7,8,8,9,9,10,10,11,11,11-heptadecafluoro-2-hydroxyundecyl) prop-2-enoate Chemical compound C=CC(=O)OCC(O)CC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F DAEIFBGPFDVHNR-UHFFFAOYSA-N 0.000 description 1
- PSGCQDPCAWOCSH-UHFFFAOYSA-N (4,7,7-trimethyl-3-bicyclo[2.2.1]heptanyl) prop-2-enoate Chemical compound C1CC2(C)C(OC(=O)C=C)CC1C2(C)C PSGCQDPCAWOCSH-UHFFFAOYSA-N 0.000 description 1
- OXYKVVLTXXXVRT-UHFFFAOYSA-N (4-chlorobenzoyl) 4-chlorobenzenecarboperoxoate Chemical compound C1=CC(Cl)=CC=C1C(=O)OOC(=O)C1=CC=C(Cl)C=C1 OXYKVVLTXXXVRT-UHFFFAOYSA-N 0.000 description 1
- QERNPKXJOBLNFM-UHFFFAOYSA-N 1,1,2,2,3,3,4,4-octafluoropentane Chemical compound CC(F)(F)C(F)(F)C(F)(F)C(F)F QERNPKXJOBLNFM-UHFFFAOYSA-N 0.000 description 1
- HSLFISVKRDQEBY-UHFFFAOYSA-N 1,1-bis(tert-butylperoxy)cyclohexane Chemical compound CC(C)(C)OOC1(OOC(C)(C)C)CCCCC1 HSLFISVKRDQEBY-UHFFFAOYSA-N 0.000 description 1
- USPWUOFNOTUBAD-UHFFFAOYSA-N 1,2,3,4,5-pentafluoro-6-(trifluoromethyl)benzene Chemical compound FC1=C(F)C(F)=C(C(F)(F)F)C(F)=C1F USPWUOFNOTUBAD-UHFFFAOYSA-N 0.000 description 1
- DSINQYRJMWHWPA-UHFFFAOYSA-N 1,2,3,4-tetrafluoro-5-methoxybenzene Chemical compound COC1=CC(F)=C(F)C(F)=C1F DSINQYRJMWHWPA-UHFFFAOYSA-N 0.000 description 1
- ROLAGNYPWIVYTG-UHFFFAOYSA-N 1,2-bis(4-methoxyphenyl)ethanamine;hydrochloride Chemical compound Cl.C1=CC(OC)=CC=C1CC(N)C1=CC=C(OC)C=C1 ROLAGNYPWIVYTG-UHFFFAOYSA-N 0.000 description 1
- OKIRBHVFJGXOIS-UHFFFAOYSA-N 1,2-di(propan-2-yl)benzene Chemical compound CC(C)C1=CC=CC=C1C(C)C OKIRBHVFJGXOIS-UHFFFAOYSA-N 0.000 description 1
- FKIJMTKJEMUCQG-UHFFFAOYSA-N 1,2-dimethyl-3-prop-1-en-2-ylbenzene Chemical compound CC(=C)C1=CC=CC(C)=C1C FKIJMTKJEMUCQG-UHFFFAOYSA-N 0.000 description 1
- MSAHTMIQULFMRG-UHFFFAOYSA-N 1,2-diphenyl-2-propan-2-yloxyethanone Chemical compound C=1C=CC=CC=1C(OC(C)C)C(=O)C1=CC=CC=C1 MSAHTMIQULFMRG-UHFFFAOYSA-N 0.000 description 1
- NCWDBNBNYVVARF-UHFFFAOYSA-N 1,3,2-dioxaborolane Chemical compound B1OCCO1 NCWDBNBNYVVARF-UHFFFAOYSA-N 0.000 description 1
- CORMBJOFDGICKF-UHFFFAOYSA-N 1,3,5-trimethoxy 2-vinyl benzene Natural products COC1=CC(OC)=C(C=C)C(OC)=C1 CORMBJOFDGICKF-UHFFFAOYSA-N 0.000 description 1
- IURLOHPODYBNSY-UHFFFAOYSA-N 1,3-dimethyl-5-prop-1-en-2-ylbenzene Chemical compound CC(=C)C1=CC(C)=CC(C)=C1 IURLOHPODYBNSY-UHFFFAOYSA-N 0.000 description 1
- DKEGCUDAFWNSSO-UHFFFAOYSA-N 1,8-dibromooctane Chemical compound BrCCCCCCCCBr DKEGCUDAFWNSSO-UHFFFAOYSA-N 0.000 description 1
- XMCNZCCURGYSDQ-UHFFFAOYSA-N 1-(1-Methylethenyl)-4-(1-methylethyl)benzene Chemical compound CC(C)C1=CC=C(C(C)=C)C=C1 XMCNZCCURGYSDQ-UHFFFAOYSA-N 0.000 description 1
- UICXTANXZJJIBC-UHFFFAOYSA-N 1-(1-hydroperoxycyclohexyl)peroxycyclohexan-1-ol Chemical compound C1CCCCC1(O)OOC1(OO)CCCCC1 UICXTANXZJJIBC-UHFFFAOYSA-N 0.000 description 1
- QFMDFTQOJHFVNR-UHFFFAOYSA-N 1-[2,2-dichloro-1-(4-ethylphenyl)ethyl]-4-ethylbenzene Chemical compound C1=CC(CC)=CC=C1C(C(Cl)Cl)C1=CC=C(CC)C=C1 QFMDFTQOJHFVNR-UHFFFAOYSA-N 0.000 description 1
- SSZOCHFYWWVSAI-UHFFFAOYSA-N 1-bromo-2-ethenylbenzene Chemical compound BrC1=CC=CC=C1C=C SSZOCHFYWWVSAI-UHFFFAOYSA-N 0.000 description 1
- KQJQPCJDKBKSLV-UHFFFAOYSA-N 1-bromo-3-ethenylbenzene Chemical compound BrC1=CC=CC(C=C)=C1 KQJQPCJDKBKSLV-UHFFFAOYSA-N 0.000 description 1
- WGGLDBIZIQMEGH-UHFFFAOYSA-N 1-bromo-4-ethenylbenzene Chemical compound BrC1=CC=C(C=C)C=C1 WGGLDBIZIQMEGH-UHFFFAOYSA-N 0.000 description 1
- PAOHAQSLJSMLAT-UHFFFAOYSA-N 1-butylperoxybutane Chemical compound CCCCOOCCCC PAOHAQSLJSMLAT-UHFFFAOYSA-N 0.000 description 1
- BOVQCIDBZXNFEJ-UHFFFAOYSA-N 1-chloro-3-ethenylbenzene Chemical compound ClC1=CC=CC(C=C)=C1 BOVQCIDBZXNFEJ-UHFFFAOYSA-N 0.000 description 1
- KTZVZZJJVJQZHV-UHFFFAOYSA-N 1-chloro-4-ethenylbenzene Chemical compound ClC1=CC=C(C=C)C=C1 KTZVZZJJVJQZHV-UHFFFAOYSA-N 0.000 description 1
- BOCJQSFSGAZAPQ-UHFFFAOYSA-N 1-chloroanthracene-9,10-dione Chemical compound O=C1C2=CC=CC=C2C(=O)C2=C1C=CC=C2Cl BOCJQSFSGAZAPQ-UHFFFAOYSA-N 0.000 description 1
- XHAFIUUYXQFJEW-UHFFFAOYSA-N 1-chloroethenylbenzene Chemical compound ClC(=C)C1=CC=CC=C1 XHAFIUUYXQFJEW-UHFFFAOYSA-N 0.000 description 1
- YNSNJGRCQCDRDM-UHFFFAOYSA-N 1-chlorothioxanthen-9-one Chemical compound S1C2=CC=CC=C2C(=O)C2=C1C=CC=C2Cl YNSNJGRCQCDRDM-UHFFFAOYSA-N 0.000 description 1
- BQTPKSBXMONSJI-UHFFFAOYSA-N 1-cyclohexylpyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C1CCCCC1 BQTPKSBXMONSJI-UHFFFAOYSA-N 0.000 description 1
- OVGRCEFMXPHEBL-UHFFFAOYSA-N 1-ethenoxypropane Chemical compound CCCOC=C OVGRCEFMXPHEBL-UHFFFAOYSA-N 0.000 description 1
- LVJZCPNIJXVIAT-UHFFFAOYSA-N 1-ethenyl-2,3,4,5,6-pentafluorobenzene Chemical compound FC1=C(F)C(F)=C(C=C)C(F)=C1F LVJZCPNIJXVIAT-UHFFFAOYSA-N 0.000 description 1
- UFMLLTODLZCTMW-UHFFFAOYSA-N 1-ethenyl-2,3,4,5,6-pentamethylbenzene Chemical compound CC1=C(C)C(C)=C(C=C)C(C)=C1C UFMLLTODLZCTMW-UHFFFAOYSA-N 0.000 description 1
- SVGCCRAIYFQZQM-UHFFFAOYSA-N 1-ethenyl-2,4,5-trimethylbenzene Chemical compound CC1=CC(C)=C(C=C)C=C1C SVGCCRAIYFQZQM-UHFFFAOYSA-N 0.000 description 1
- OEVVKKAVYQFQNV-UHFFFAOYSA-N 1-ethenyl-2,4-dimethylbenzene Chemical compound CC1=CC=C(C=C)C(C)=C1 OEVVKKAVYQFQNV-UHFFFAOYSA-N 0.000 description 1
- VGWWQZSCLBZOGK-UHFFFAOYSA-N 1-ethenyl-2-(trifluoromethyl)benzene Chemical compound FC(F)(F)C1=CC=CC=C1C=C VGWWQZSCLBZOGK-UHFFFAOYSA-N 0.000 description 1
- VTPNYMSKBPZSTF-UHFFFAOYSA-N 1-ethenyl-2-ethylbenzene Chemical compound CCC1=CC=CC=C1C=C VTPNYMSKBPZSTF-UHFFFAOYSA-N 0.000 description 1
- NVZWEEGUWXZOKI-UHFFFAOYSA-N 1-ethenyl-2-methylbenzene Chemical compound CC1=CC=CC=C1C=C NVZWEEGUWXZOKI-UHFFFAOYSA-N 0.000 description 1
- XIRPMPKSZHNMST-UHFFFAOYSA-N 1-ethenyl-2-phenylbenzene Chemical group C=CC1=CC=CC=C1C1=CC=CC=C1 XIRPMPKSZHNMST-UHFFFAOYSA-N 0.000 description 1
- XKMDZVINHIFHLY-UHFFFAOYSA-N 1-ethenyl-3,5-dimethylbenzene Chemical compound CC1=CC(C)=CC(C=C)=C1 XKMDZVINHIFHLY-UHFFFAOYSA-N 0.000 description 1
- ARHOUOIHKWELMD-UHFFFAOYSA-N 1-ethenyl-3-(trifluoromethyl)benzene Chemical compound FC(F)(F)C1=CC=CC(C=C)=C1 ARHOUOIHKWELMD-UHFFFAOYSA-N 0.000 description 1
- XHUZSRRCICJJCN-UHFFFAOYSA-N 1-ethenyl-3-ethylbenzene Chemical compound CCC1=CC=CC(C=C)=C1 XHUZSRRCICJJCN-UHFFFAOYSA-N 0.000 description 1
- PECUPOXPPBBFLU-UHFFFAOYSA-N 1-ethenyl-3-methoxybenzene Chemical compound COC1=CC=CC(C=C)=C1 PECUPOXPPBBFLU-UHFFFAOYSA-N 0.000 description 1
- JZHGRUMIRATHIU-UHFFFAOYSA-N 1-ethenyl-3-methylbenzene Chemical compound CC1=CC=CC(C=C)=C1 JZHGRUMIRATHIU-UHFFFAOYSA-N 0.000 description 1
- ZMXAHWXPRKVGCM-UHFFFAOYSA-N 1-ethenyl-3-phenylbenzene Chemical group C=CC1=CC=CC(C=2C=CC=CC=2)=C1 ZMXAHWXPRKVGCM-UHFFFAOYSA-N 0.000 description 1
- IYSVFZBXZVPIFA-UHFFFAOYSA-N 1-ethenyl-4-(4-ethenylphenyl)benzene Chemical group C1=CC(C=C)=CC=C1C1=CC=C(C=C)C=C1 IYSVFZBXZVPIFA-UHFFFAOYSA-N 0.000 description 1
- HCJFUXHMKAGYFV-UHFFFAOYSA-N 1-ethenyl-4-(4-phenylphenyl)benzene Chemical group C1=CC(C=C)=CC=C1C1=CC=C(C=2C=CC=CC=2)C=C1 HCJFUXHMKAGYFV-UHFFFAOYSA-N 0.000 description 1
- WNLYONPBCCQPHU-UHFFFAOYSA-N 1-ethenyl-4-(fluoromethyl)benzene Chemical compound FCC1=CC=C(C=C)C=C1 WNLYONPBCCQPHU-UHFFFAOYSA-N 0.000 description 1
- CEWDRCQPGANDRS-UHFFFAOYSA-N 1-ethenyl-4-(trifluoromethyl)benzene Chemical compound FC(F)(F)C1=CC=C(C=C)C=C1 CEWDRCQPGANDRS-UHFFFAOYSA-N 0.000 description 1
- WHFHDVDXYKOSKI-UHFFFAOYSA-N 1-ethenyl-4-ethylbenzene Chemical compound CCC1=CC=C(C=C)C=C1 WHFHDVDXYKOSKI-UHFFFAOYSA-N 0.000 description 1
- UVHXEHGUEKARKZ-UHFFFAOYSA-N 1-ethenylanthracene Chemical compound C1=CC=C2C=C3C(C=C)=CC=CC3=CC2=C1 UVHXEHGUEKARKZ-UHFFFAOYSA-N 0.000 description 1
- MMZYCBHLNZVROM-UHFFFAOYSA-N 1-fluoro-2-methylbenzene Chemical compound CC1=CC=CC=C1F MMZYCBHLNZVROM-UHFFFAOYSA-N 0.000 description 1
- HIDBROSJWZYGSZ-UHFFFAOYSA-N 1-phenylpyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C1=CC=CC=C1 HIDBROSJWZYGSZ-UHFFFAOYSA-N 0.000 description 1
- IGGDKDTUCAWDAN-UHFFFAOYSA-N 1-vinylnaphthalene Chemical compound C1=CC=C2C(C=C)=CC=CC2=C1 IGGDKDTUCAWDAN-UHFFFAOYSA-N 0.000 description 1
- QTKPMCIBUROOGY-UHFFFAOYSA-N 2,2,2-trifluoroethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC(F)(F)F QTKPMCIBUROOGY-UHFFFAOYSA-N 0.000 description 1
- VBHXIMACZBQHPX-UHFFFAOYSA-N 2,2,2-trifluoroethyl prop-2-enoate Chemical compound FC(F)(F)COC(=O)C=C VBHXIMACZBQHPX-UHFFFAOYSA-N 0.000 description 1
- CLISWDZSTWQFNX-UHFFFAOYSA-N 2,2,3,3,3-pentafluoropropyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC(F)(F)C(F)(F)F CLISWDZSTWQFNX-UHFFFAOYSA-N 0.000 description 1
- JDVGNKIUXZQTFD-UHFFFAOYSA-N 2,2,3,3,3-pentafluoropropyl prop-2-enoate Chemical compound FC(F)(F)C(F)(F)COC(=O)C=C JDVGNKIUXZQTFD-UHFFFAOYSA-N 0.000 description 1
- XAENZTGUQXVFPQ-UHFFFAOYSA-N 2,2,3,3,4,4,5,5,6,6,7,7,8,8,9,9-hexadecafluorononyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)F XAENZTGUQXVFPQ-UHFFFAOYSA-N 0.000 description 1
- QXDKTLFTMZTCKT-UHFFFAOYSA-N 2,2,3,3,4,4,5,5,6,6,7,7,8,8,9,9-hexadecafluorononyl prop-2-enoate Chemical compound FC(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)COC(=O)C=C QXDKTLFTMZTCKT-UHFFFAOYSA-N 0.000 description 1
- YJKHMSPWWGBKTN-UHFFFAOYSA-N 2,2,3,3,4,4,5,5,6,6,7,7-dodecafluoroheptyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)F YJKHMSPWWGBKTN-UHFFFAOYSA-N 0.000 description 1
- QJEJDNMGOWJONG-UHFFFAOYSA-N 2,2,3,3,4,4,5,5,6,6,7,7-dodecafluoroheptyl prop-2-enoate Chemical compound FC(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)COC(=O)C=C QJEJDNMGOWJONG-UHFFFAOYSA-N 0.000 description 1
- ZNJXRXXJPIFFAO-UHFFFAOYSA-N 2,2,3,3,4,4,5,5-octafluoropentyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC(F)(F)C(F)(F)C(F)(F)C(F)F ZNJXRXXJPIFFAO-UHFFFAOYSA-N 0.000 description 1
- RSVZYSKAPMBSMY-UHFFFAOYSA-N 2,2,3,3-tetrafluoropropyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC(F)(F)C(F)F RSVZYSKAPMBSMY-UHFFFAOYSA-N 0.000 description 1
- VHJHZYSXJKREEE-UHFFFAOYSA-N 2,2,3,3-tetrafluoropropyl prop-2-enoate Chemical compound FC(F)C(F)(F)COC(=O)C=C VHJHZYSXJKREEE-UHFFFAOYSA-N 0.000 description 1
- DFVPUWGVOPDJTC-UHFFFAOYSA-N 2,2,3,4,4,4-hexafluorobutyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC(F)(F)C(F)C(F)(F)F DFVPUWGVOPDJTC-UHFFFAOYSA-N 0.000 description 1
- LMVLEDTVXAGBJV-UHFFFAOYSA-N 2,2,3,4,4,4-hexafluorobutyl prop-2-enoate Chemical compound FC(F)(F)C(F)C(F)(F)COC(=O)C=C LMVLEDTVXAGBJV-UHFFFAOYSA-N 0.000 description 1
- HQOVXPHOJANJBR-UHFFFAOYSA-N 2,2-bis(tert-butylperoxy)butane Chemical compound CC(C)(C)OOC(C)(CC)OOC(C)(C)C HQOVXPHOJANJBR-UHFFFAOYSA-N 0.000 description 1
- PIZHFBODNLEQBL-UHFFFAOYSA-N 2,2-diethoxy-1-phenylethanone Chemical compound CCOC(OCC)C(=O)C1=CC=CC=C1 PIZHFBODNLEQBL-UHFFFAOYSA-N 0.000 description 1
- LTMRRSWNXVJMBA-UHFFFAOYSA-L 2,2-diethylpropanedioate Chemical compound CCC(CC)(C([O-])=O)C([O-])=O LTMRRSWNXVJMBA-UHFFFAOYSA-L 0.000 description 1
- KWVGIHKZDCUPEU-UHFFFAOYSA-N 2,2-dimethoxy-2-phenylacetophenone Chemical compound C=1C=CC=CC=1C(OC)(OC)C(=O)C1=CC=CC=C1 KWVGIHKZDCUPEU-UHFFFAOYSA-N 0.000 description 1
- JKTAIYGNOFSMCE-UHFFFAOYSA-N 2,3-di(nonyl)phenol Chemical compound CCCCCCCCCC1=CC=CC(O)=C1CCCCCCCCC JKTAIYGNOFSMCE-UHFFFAOYSA-N 0.000 description 1
- BYLSIPUARIZAHZ-UHFFFAOYSA-N 2,4,6-tris(1-phenylethyl)phenol Chemical compound C=1C(C(C)C=2C=CC=CC=2)=C(O)C(C(C)C=2C=CC=CC=2)=CC=1C(C)C1=CC=CC=C1 BYLSIPUARIZAHZ-UHFFFAOYSA-N 0.000 description 1
- QIDIFDCCFHVZOR-UHFFFAOYSA-N 2,4-dimethyl-1-prop-1-en-2-ylbenzene Chemical compound CC(=C)C1=CC=C(C)C=C1C QIDIFDCCFHVZOR-UHFFFAOYSA-N 0.000 description 1
- 150000003923 2,5-pyrrolediones Chemical class 0.000 description 1
- ZVLLQUBSTZNYIC-UHFFFAOYSA-N 2-(2-hydroxyphenyl)ethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCC1=CC=CC=C1O ZVLLQUBSTZNYIC-UHFFFAOYSA-N 0.000 description 1
- DBRHKXSUGNZOLP-UHFFFAOYSA-N 2-(2-isocyanatoethoxy)ethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCOCCN=C=O DBRHKXSUGNZOLP-UHFFFAOYSA-N 0.000 description 1
- XYQCAYPAVDYYBZ-UHFFFAOYSA-N 2-(2-isothiocyanatoethoxy)ethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCOCCN=C=S XYQCAYPAVDYYBZ-UHFFFAOYSA-N 0.000 description 1
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 1
- JJBFVQSGPLGDNX-UHFFFAOYSA-N 2-(2-methylprop-2-enoyloxy)propyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC(C)COC(=O)C(C)=C JJBFVQSGPLGDNX-UHFFFAOYSA-N 0.000 description 1
- GOXQRTZXKQZDDN-UHFFFAOYSA-N 2-Ethylhexyl acrylate Chemical compound CCCCC(CC)COC(=O)C=C GOXQRTZXKQZDDN-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- MTLWTRLYHAQCAM-UHFFFAOYSA-N 2-[(1-cyano-2-methylpropyl)diazenyl]-3-methylbutanenitrile Chemical compound CC(C)C(C#N)N=NC(C#N)C(C)C MTLWTRLYHAQCAM-UHFFFAOYSA-N 0.000 description 1
- CUEJHYHGUMAGBP-UHFFFAOYSA-N 2-[2-(1h-indol-5-yl)phenyl]acetic acid Chemical compound OC(=O)CC1=CC=CC=C1C1=CC=C(NC=C2)C2=C1 CUEJHYHGUMAGBP-UHFFFAOYSA-N 0.000 description 1
- HWSSEYVMGDIFMH-UHFFFAOYSA-N 2-[2-[2-(2-methylprop-2-enoyloxy)ethoxy]ethoxy]ethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCOCCOCCOC(=O)C(C)=C HWSSEYVMGDIFMH-UHFFFAOYSA-N 0.000 description 1
- YHEHCZLBPYNMES-UHFFFAOYSA-N 2-[7-(1,3,2-dioxaborolan-2-yl)-9,9-dioctylfluoren-2-yl]-1,3,2-dioxaborolane Chemical compound C1=C2C(CCCCCCCC)(CCCCCCCC)C3=CC(B4OCCO4)=CC=C3C2=CC=C1B1OCCO1 YHEHCZLBPYNMES-UHFFFAOYSA-N 0.000 description 1
- SXNCMLQAQIGJDO-UHFFFAOYSA-N 2-bromo-5-(5-bromothiophen-2-yl)thiophene Chemical compound S1C(Br)=CC=C1C1=CC=C(Br)S1 SXNCMLQAQIGJDO-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- ISRGONDNXBCDBM-UHFFFAOYSA-N 2-chlorostyrene Chemical compound ClC1=CC=CC=C1C=C ISRGONDNXBCDBM-UHFFFAOYSA-N 0.000 description 1
- KRDXTHSSNCTAGY-UHFFFAOYSA-N 2-cyclohexylpyrrolidine Chemical compound C1CCNC1C1CCCCC1 KRDXTHSSNCTAGY-UHFFFAOYSA-N 0.000 description 1
- VUIWJRYTWUGOOF-UHFFFAOYSA-N 2-ethenoxyethanol Chemical compound OCCOC=C VUIWJRYTWUGOOF-UHFFFAOYSA-N 0.000 description 1
- PDELBHCVXBSVPJ-UHFFFAOYSA-N 2-ethenyl-1,3,5-trimethylbenzene Chemical compound CC1=CC(C)=C(C=C)C(C)=C1 PDELBHCVXBSVPJ-UHFFFAOYSA-N 0.000 description 1
- OWRKXOZFTROHSH-UHFFFAOYSA-N 2-ethenyl-1,3-dimethylbenzene Chemical compound CC1=CC=CC(C)=C1C=C OWRKXOZFTROHSH-UHFFFAOYSA-N 0.000 description 1
- DBWWINQJTZYDFK-UHFFFAOYSA-N 2-ethenyl-1,4-dimethylbenzene Chemical compound CC1=CC=C(C)C(C=C)=C1 DBWWINQJTZYDFK-UHFFFAOYSA-N 0.000 description 1
- KMNCBSZOIQAUFX-UHFFFAOYSA-N 2-ethoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OCC)C(=O)C1=CC=CC=C1 KMNCBSZOIQAUFX-UHFFFAOYSA-N 0.000 description 1
- WFUGQJXVXHBTEM-UHFFFAOYSA-N 2-hydroperoxy-2-(2-hydroperoxybutan-2-ylperoxy)butane Chemical compound CCC(C)(OO)OOC(C)(CC)OO WFUGQJXVXHBTEM-UHFFFAOYSA-N 0.000 description 1
- XMLYCEVDHLAQEL-UHFFFAOYSA-N 2-hydroxy-2-methyl-1-phenylpropan-1-one Chemical compound CC(C)(O)C(=O)C1=CC=CC=C1 XMLYCEVDHLAQEL-UHFFFAOYSA-N 0.000 description 1
- IEVADDDOVGMCSI-UHFFFAOYSA-N 2-hydroxybutyl 2-methylprop-2-enoate Chemical compound CCC(O)COC(=O)C(C)=C IEVADDDOVGMCSI-UHFFFAOYSA-N 0.000 description 1
- NJRHMGPRPPEGQL-UHFFFAOYSA-N 2-hydroxybutyl prop-2-enoate Chemical compound CCC(O)COC(=O)C=C NJRHMGPRPPEGQL-UHFFFAOYSA-N 0.000 description 1
- OMIGHNLMNHATMP-UHFFFAOYSA-N 2-hydroxyethyl prop-2-enoate Chemical compound OCCOC(=O)C=C OMIGHNLMNHATMP-UHFFFAOYSA-N 0.000 description 1
- VHSHLMUCYSAUQU-UHFFFAOYSA-N 2-hydroxypropyl methacrylate Chemical compound CC(O)COC(=O)C(C)=C VHSHLMUCYSAUQU-UHFFFAOYSA-N 0.000 description 1
- GWZMWHWAWHPNHN-UHFFFAOYSA-N 2-hydroxypropyl prop-2-enoate Chemical compound CC(O)COC(=O)C=C GWZMWHWAWHPNHN-UHFFFAOYSA-N 0.000 description 1
- DPNXHTDWGGVXID-UHFFFAOYSA-N 2-isocyanatoethyl prop-2-enoate Chemical compound C=CC(=O)OCCN=C=O DPNXHTDWGGVXID-UHFFFAOYSA-N 0.000 description 1
- LZCWQIOEPSZWSU-UHFFFAOYSA-N 2-isothiocyanatoethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCN=C=S LZCWQIOEPSZWSU-UHFFFAOYSA-N 0.000 description 1
- SQQZBEZHIRXKBB-UHFFFAOYSA-N 2-isothiocyanatoethyl prop-2-enoate Chemical compound C=CC(=O)OCCN=C=S SQQZBEZHIRXKBB-UHFFFAOYSA-N 0.000 description 1
- BQZJOQXSCSZQPS-UHFFFAOYSA-N 2-methoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OC)C(=O)C1=CC=CC=C1 BQZJOQXSCSZQPS-UHFFFAOYSA-N 0.000 description 1
- TVWBTVJBDFTVOW-UHFFFAOYSA-N 2-methyl-1-(2-methylpropylperoxy)propane Chemical compound CC(C)COOCC(C)C TVWBTVJBDFTVOW-UHFFFAOYSA-N 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- BKOOMYPCSUNDGP-UHFFFAOYSA-N 2-methylbut-2-ene Chemical group CC=C(C)C BKOOMYPCSUNDGP-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- RUMACXVDVNRZJZ-UHFFFAOYSA-N 2-methylpropyl 2-methylprop-2-enoate Chemical compound CC(C)COC(=O)C(C)=C RUMACXVDVNRZJZ-UHFFFAOYSA-N 0.000 description 1
- CFVWNXQPGQOHRJ-UHFFFAOYSA-N 2-methylpropyl prop-2-enoate Chemical compound CC(C)COC(=O)C=C CFVWNXQPGQOHRJ-UHFFFAOYSA-N 0.000 description 1
- MYISVPVWAQRUTL-UHFFFAOYSA-N 2-methylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(C)=CC=C3SC2=C1 MYISVPVWAQRUTL-UHFFFAOYSA-N 0.000 description 1
- QCPOKPFKMYZWBC-UHFFFAOYSA-N 2-octoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OCCCCCCCC)C(=O)C1=CC=CC=C1 QCPOKPFKMYZWBC-UHFFFAOYSA-N 0.000 description 1
- VFZKVQVQOMDJEG-UHFFFAOYSA-N 2-prop-2-enoyloxypropyl prop-2-enoate Chemical compound C=CC(=O)OC(C)COC(=O)C=C VFZKVQVQOMDJEG-UHFFFAOYSA-N 0.000 description 1
- KTALPKYXQZGAEG-UHFFFAOYSA-N 2-propan-2-ylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(C(C)C)=CC=C3SC2=C1 KTALPKYXQZGAEG-UHFFFAOYSA-N 0.000 description 1
- KXYAVSFOJVUIHT-UHFFFAOYSA-N 2-vinylnaphthalene Chemical compound C1=CC=CC2=CC(C=C)=CC=C21 KXYAVSFOJVUIHT-UHFFFAOYSA-N 0.000 description 1
- CDXFIRXEAJABAZ-UHFFFAOYSA-N 3,3,4,4,5,5,6,6,7,7,8,8,8-tridecafluorooctyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F CDXFIRXEAJABAZ-UHFFFAOYSA-N 0.000 description 1
- VPKQPPJQTZJZDB-UHFFFAOYSA-N 3,3,4,4,5,5,6,6,7,7,8,8,8-tridecafluorooctyl prop-2-enoate Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)CCOC(=O)C=C VPKQPPJQTZJZDB-UHFFFAOYSA-N 0.000 description 1
- HBZFBSFGXQBQTB-UHFFFAOYSA-N 3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,10-heptadecafluorodecyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F HBZFBSFGXQBQTB-UHFFFAOYSA-N 0.000 description 1
- QUKRIOLKOHUUBM-UHFFFAOYSA-N 3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,10-heptadecafluorodecyl prop-2-enoate Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)CCOC(=O)C=C QUKRIOLKOHUUBM-UHFFFAOYSA-N 0.000 description 1
- FQHLOOOXLDQLPF-UHFFFAOYSA-N 3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,11,11,12,12,12-henicosafluorododecyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F FQHLOOOXLDQLPF-UHFFFAOYSA-N 0.000 description 1
- FIAHOPQKBBASOY-UHFFFAOYSA-N 3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,11,11,12,12,12-henicosafluorododecyl prop-2-enoate Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)CCOC(=O)C=C FIAHOPQKBBASOY-UHFFFAOYSA-N 0.000 description 1
- UFLLSVUGUWBXJA-UHFFFAOYSA-N 3,5-diethyl-1h-pyrazole Chemical compound CCC=1C=C(CC)NN=1 UFLLSVUGUWBXJA-UHFFFAOYSA-N 0.000 description 1
- SDXAWLJRERMRKF-UHFFFAOYSA-N 3,5-dimethyl-1h-pyrazole Chemical compound CC=1C=C(C)NN=1 SDXAWLJRERMRKF-UHFFFAOYSA-N 0.000 description 1
- FRIBMENBGGCKPD-UHFFFAOYSA-N 3-(2,3-dimethoxyphenyl)prop-2-enal Chemical compound COC1=CC=CC(C=CC=O)=C1OC FRIBMENBGGCKPD-UHFFFAOYSA-N 0.000 description 1
- XYFRHHAYSXIKGH-UHFFFAOYSA-N 3-(5-methoxy-2-methoxycarbonyl-1h-indol-3-yl)prop-2-enoic acid Chemical compound C1=C(OC)C=C2C(C=CC(O)=O)=C(C(=O)OC)NC2=C1 XYFRHHAYSXIKGH-UHFFFAOYSA-N 0.000 description 1
- YNGIFMKMDRDNBQ-UHFFFAOYSA-N 3-ethenylphenol Chemical compound OC1=CC=CC(C=C)=C1 YNGIFMKMDRDNBQ-UHFFFAOYSA-N 0.000 description 1
- BIDWUUDRRVHZLQ-UHFFFAOYSA-N 3-ethyl-3-(2-ethylhexoxymethyl)oxetane Chemical compound CCCCC(CC)COCC1(CC)COC1 BIDWUUDRRVHZLQ-UHFFFAOYSA-N 0.000 description 1
- CGRJJOYCFCCGPX-UHFFFAOYSA-N 3-ethyloxetane Chemical group CCC1COC1 CGRJJOYCFCCGPX-UHFFFAOYSA-N 0.000 description 1
- QZPSOSOOLFHYRR-UHFFFAOYSA-N 3-hydroxypropyl prop-2-enoate Chemical compound OCCCOC(=O)C=C QZPSOSOOLFHYRR-UHFFFAOYSA-N 0.000 description 1
- KCYBPSQLUMHABO-UHFFFAOYSA-N 3-methylbut-2-en-2-ylgermanium Chemical compound CC(C)=C(C)[Ge] KCYBPSQLUMHABO-UHFFFAOYSA-N 0.000 description 1
- VFXXTYGQYWRHJP-UHFFFAOYSA-N 4,4'-azobis(4-cyanopentanoic acid) Chemical compound OC(=O)CCC(C)(C#N)N=NC(C)(CCC(O)=O)C#N VFXXTYGQYWRHJP-UHFFFAOYSA-N 0.000 description 1
- CVIDTCAFIMQJAZ-UHFFFAOYSA-N 4,5,6-tris(tert-butylperoxy)triazine Chemical compound CC(C)(C)OOC1=NN=NC(OOC(C)(C)C)=C1OOC(C)(C)C CVIDTCAFIMQJAZ-UHFFFAOYSA-N 0.000 description 1
- XOJWAAUYNWGQAU-UHFFFAOYSA-N 4-(2-methylprop-2-enoyloxy)butyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCCCOC(=O)C(C)=C XOJWAAUYNWGQAU-UHFFFAOYSA-N 0.000 description 1
- JLBJTVDPSNHSKJ-UHFFFAOYSA-N 4-Methylstyrene Chemical compound CC1=CC=C(C=C)C=C1 JLBJTVDPSNHSKJ-UHFFFAOYSA-N 0.000 description 1
- LBSXSAXOLABXMF-UHFFFAOYSA-N 4-Vinylaniline Chemical compound NC1=CC=C(C=C)C=C1 LBSXSAXOLABXMF-UHFFFAOYSA-N 0.000 description 1
- WXTVPMWCUMEVSZ-UHFFFAOYSA-N 4-amino-3,5-diiodobenzoic acid Chemical compound NC1=C(I)C=C(C(O)=O)C=C1I WXTVPMWCUMEVSZ-UHFFFAOYSA-N 0.000 description 1
- DBCAQXHNJOFNGC-UHFFFAOYSA-N 4-bromo-1,1,1-trifluorobutane Chemical compound FC(F)(F)CCCBr DBCAQXHNJOFNGC-UHFFFAOYSA-N 0.000 description 1
- HMBNQNDUEFFFNZ-UHFFFAOYSA-N 4-ethenoxybutan-1-ol Chemical compound OCCCCOC=C HMBNQNDUEFFFNZ-UHFFFAOYSA-N 0.000 description 1
- FUGYGGDSWSUORM-UHFFFAOYSA-N 4-hydroxystyrene Chemical compound OC1=CC=C(C=C)C=C1 FUGYGGDSWSUORM-UHFFFAOYSA-N 0.000 description 1
- JHWGFJBTMHEZME-UHFFFAOYSA-N 4-prop-2-enoyloxybutyl prop-2-enoate Chemical compound C=CC(=O)OCCCCOC(=O)C=C JHWGFJBTMHEZME-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical group [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- AAOISIQFPPAFQO-UHFFFAOYSA-N 7:0(6Me,6Me) Chemical compound CC(C)(C)CCCCC(O)=O AAOISIQFPPAFQO-UHFFFAOYSA-N 0.000 description 1
- DLFVBJFMPXGRIB-UHFFFAOYSA-N Acetamide Chemical compound CC(N)=O DLFVBJFMPXGRIB-UHFFFAOYSA-N 0.000 description 1
- LYJHVEDILOKZCG-UHFFFAOYSA-N Allyl benzoate Chemical compound C=CCOC(=O)C1=CC=CC=C1 LYJHVEDILOKZCG-UHFFFAOYSA-N 0.000 description 1
- NOWKCMXCCJGMRR-UHFFFAOYSA-N Aziridine Chemical compound C1CN1 NOWKCMXCCJGMRR-UHFFFAOYSA-N 0.000 description 1
- 239000004342 Benzoyl peroxide Substances 0.000 description 1
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical group [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical class C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 1
- WUIRGUDWPKRGHJ-UHFFFAOYSA-N CC(=C)C(O)=O.CC(=C)C(O)=O.CC(=C)C(O)=O.CC(=C)C(O)=O.CC(=C)C(O)=O.OCC(CO)(CO)CO Chemical compound CC(=C)C(O)=O.CC(=C)C(O)=O.CC(=C)C(O)=O.CC(=C)C(O)=O.CC(=C)C(O)=O.OCC(CO)(CO)CO WUIRGUDWPKRGHJ-UHFFFAOYSA-N 0.000 description 1
- WSLMMTSXVOREMM-UHFFFAOYSA-N CCC([Ge])=C(CC)CC Chemical compound CCC([Ge])=C(CC)CC WSLMMTSXVOREMM-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- IEPRKVQEAMIZSS-UHFFFAOYSA-N Di-Et ester-Fumaric acid Natural products CCOC(=O)C=CC(=O)OCC IEPRKVQEAMIZSS-UHFFFAOYSA-N 0.000 description 1
- QSJXEFYPDANLFS-UHFFFAOYSA-N Diacetyl Chemical class CC(=O)C(C)=O QSJXEFYPDANLFS-UHFFFAOYSA-N 0.000 description 1
- 239000004641 Diallyl-phthalate Substances 0.000 description 1
- IEPRKVQEAMIZSS-WAYWQWQTSA-N Diethyl maleate Chemical compound CCOC(=O)\C=C/C(=O)OCC IEPRKVQEAMIZSS-WAYWQWQTSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- JIGUQPWFLRLWPJ-UHFFFAOYSA-N Ethyl acrylate Chemical compound CCOC(=O)C=C JIGUQPWFLRLWPJ-UHFFFAOYSA-N 0.000 description 1
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 description 1
- VQTUBCCKSQIDNK-UHFFFAOYSA-N Isobutene Chemical group CC(C)=C VQTUBCCKSQIDNK-UHFFFAOYSA-N 0.000 description 1
- YIVJZNGAASQVEM-UHFFFAOYSA-N Lauroyl peroxide Chemical compound CCCCCCCCCCCC(=O)OOC(=O)CCCCCCCCCCC YIVJZNGAASQVEM-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- WRQNANDWMGAFTP-UHFFFAOYSA-N Methylacetoacetic acid Chemical compound COC(=O)CC(C)=O WRQNANDWMGAFTP-UHFFFAOYSA-N 0.000 description 1
- IGFHQQFPSIBGKE-UHFFFAOYSA-N Nonylphenol Natural products CCCCCCCCCC1=CC=C(O)C=C1 IGFHQQFPSIBGKE-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- XQAVYBWWWZMURF-UHFFFAOYSA-N OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OCC(CO)(CO)CO Chemical compound OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OCC(CO)(CO)CO XQAVYBWWWZMURF-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 229920002873 Polyethylenimine Polymers 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- DWAQJAXMDSEUJJ-UHFFFAOYSA-M Sodium bisulfite Chemical compound [Na+].OS([O-])=O DWAQJAXMDSEUJJ-UHFFFAOYSA-M 0.000 description 1
- 244000028419 Styrax benzoin Species 0.000 description 1
- 235000000126 Styrax benzoin Nutrition 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-N Sulfurous acid Chemical class OS(O)=O LSNNMFCWUKXFEE-UHFFFAOYSA-N 0.000 description 1
- 235000008411 Sumatra benzointree Nutrition 0.000 description 1
- DAKWPKUUDNSNPN-UHFFFAOYSA-N Trimethylolpropane triacrylate Chemical compound C=CC(=O)OCC(CC)(COC(=O)C=C)COC(=O)C=C DAKWPKUUDNSNPN-UHFFFAOYSA-N 0.000 description 1
- OKKRPWIIYQTPQF-UHFFFAOYSA-N Trimethylolpropane trimethacrylate Chemical compound CC(=C)C(=O)OCC(CC)(COC(=O)C(C)=C)COC(=O)C(C)=C OKKRPWIIYQTPQF-UHFFFAOYSA-N 0.000 description 1
- 241001453327 Xanthomonadaceae Species 0.000 description 1
- IAXXETNIOYFMLW-COPLHBTASA-N [(1s,3s,4s)-4,7,7-trimethyl-3-bicyclo[2.2.1]heptanyl] 2-methylprop-2-enoate Chemical compound C1C[C@]2(C)[C@@H](OC(=O)C(=C)C)C[C@H]1C2(C)C IAXXETNIOYFMLW-COPLHBTASA-N 0.000 description 1
- GCNKJQRMNYNDBI-UHFFFAOYSA-N [2-(hydroxymethyl)-2-(2-methylprop-2-enoyloxymethyl)butyl] 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC(CO)(CC)COC(=O)C(C)=C GCNKJQRMNYNDBI-UHFFFAOYSA-N 0.000 description 1
- TUOBEAZXHLTYLF-UHFFFAOYSA-N [2-(hydroxymethyl)-2-(prop-2-enoyloxymethyl)butyl] prop-2-enoate Chemical compound C=CC(=O)OCC(CO)(CC)COC(=O)C=C TUOBEAZXHLTYLF-UHFFFAOYSA-N 0.000 description 1
- LXEKPEMOWBOYRF-UHFFFAOYSA-N [2-[(1-azaniumyl-1-imino-2-methylpropan-2-yl)diazenyl]-2-methylpropanimidoyl]azanium;dichloride Chemical compound Cl.Cl.NC(=N)C(C)(C)N=NC(C)(C)C(N)=N LXEKPEMOWBOYRF-UHFFFAOYSA-N 0.000 description 1
- KTPONRIHDUNNPD-UHFFFAOYSA-N [3,3,4,4,5,5,6,6,7,7,8,8,9,10,10,10-hexadecafluoro-9-(trifluoromethyl)decyl] 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(C(F)(F)F)C(F)(F)F KTPONRIHDUNNPD-UHFFFAOYSA-N 0.000 description 1
- QGIJZPXLSMRDCW-UHFFFAOYSA-N [3,3,4,4,5,5,6,6,7,7,8,8,9,10,10,10-hexadecafluoro-9-(trifluoromethyl)decyl] prop-2-enoate Chemical compound FC(F)(F)C(F)(C(F)(F)F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)CCOC(=O)C=C QGIJZPXLSMRDCW-UHFFFAOYSA-N 0.000 description 1
- SAIYGCOTLRCBJP-UHFFFAOYSA-N [3,3,4,4,5,5,6,6,7,8,8,8-dodecafluoro-7-(trifluoromethyl)octyl] 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(C(F)(F)F)C(F)(F)F SAIYGCOTLRCBJP-UHFFFAOYSA-N 0.000 description 1
- ATJVSEYUFBWZQI-UHFFFAOYSA-N [3,3,4,4,5,6,6,6-octafluoro-2-hydroxy-2-methyl-5-(trifluoromethyl)hexyl] 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC(C)(O)C(F)(F)C(F)(F)C(F)(C(F)(F)F)C(F)(F)F ATJVSEYUFBWZQI-UHFFFAOYSA-N 0.000 description 1
- UXVXKXDSDYDRTQ-UHFFFAOYSA-N [3,3,4,4,5,6,6,6-octafluoro-5-(trifluoromethyl)hexyl] prop-2-enoate Chemical compound FC(F)(F)C(F)(C(F)(F)F)C(F)(F)C(F)(F)CCOC(=O)C=C UXVXKXDSDYDRTQ-UHFFFAOYSA-N 0.000 description 1
- WNVNMSONKCMAPU-UHFFFAOYSA-N [4,4,5,5,6,6,7,7,8,8,9,9,10,11,11,11-hexadecafluoro-2-hydroxy-10-(trifluoromethyl)undecyl] 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC(O)CC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(C(F)(F)F)C(F)(F)F WNVNMSONKCMAPU-UHFFFAOYSA-N 0.000 description 1
- FEADBAAHXDCRGE-UHFFFAOYSA-N [4,4,5,5,6,6,7,7,8,9,9,9-dodecafluoro-2-hydroxy-8-(trifluoromethyl)nonyl] prop-2-enoate [3,3,4,4,5,6,6,6-octafluoro-2-hydroxy-2-methyl-5-(trifluoromethyl)hexyl] prop-2-enoate Chemical compound C(C=C)(=O)OCC(CC(C(C(C(C(C(F)(F)F)(C(F)(F)F)F)(F)F)(F)F)(F)F)(F)F)O.C(C=C)(=O)OCC(C)(O)C(C(C(C(F)(F)F)(C(F)(F)F)F)(F)F)(F)F FEADBAAHXDCRGE-UHFFFAOYSA-N 0.000 description 1
- LZKRGSPBGVICLV-UHFFFAOYSA-N [4,4,5,5,6,7,7,7-octafluoro-2-hydroxy-6-(trifluoromethyl)heptyl] 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC(O)CC(F)(F)C(F)(F)C(F)(C(F)(F)F)C(F)(F)F LZKRGSPBGVICLV-UHFFFAOYSA-N 0.000 description 1
- UMWCHHTXFDYJDZ-UHFFFAOYSA-N [4,4,5,5,6,7,7,7-octafluoro-2-hydroxy-6-(trifluoromethyl)heptyl] prop-2-enoate Chemical compound C=CC(=O)OCC(O)CC(F)(F)C(F)(F)C(F)(C(F)(F)F)C(F)(F)F UMWCHHTXFDYJDZ-UHFFFAOYSA-N 0.000 description 1
- TUENMJOAENOPRH-UHFFFAOYSA-K [O-]P([O-])([O-])=O.c1ccc(cc1)[S+](c1ccccc1)c1ccccc1.c1ccc(cc1)[S+](c1ccccc1)c1ccccc1.c1ccc(cc1)[S+](c1ccccc1)c1ccccc1 Chemical compound [O-]P([O-])([O-])=O.c1ccc(cc1)[S+](c1ccccc1)c1ccccc1.c1ccc(cc1)[S+](c1ccccc1)c1ccccc1.c1ccc(cc1)[S+](c1ccccc1)c1ccccc1 TUENMJOAENOPRH-UHFFFAOYSA-K 0.000 description 1
- MFIBZDZRPYQXOM-UHFFFAOYSA-N [dimethyl-[3-(oxiran-2-ylmethoxy)propyl]silyl]oxy-dimethyl-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound C1OC1COCCC[Si](C)(C)O[Si](C)(C)CCCOCC1CO1 MFIBZDZRPYQXOM-UHFFFAOYSA-N 0.000 description 1
- KYIKRXIYLAGAKQ-UHFFFAOYSA-N abcn Chemical compound C1CCCCC1(C#N)N=NC1(C#N)CCCCC1 KYIKRXIYLAGAKQ-UHFFFAOYSA-N 0.000 description 1
- DHKHKXVYLBGOIT-UHFFFAOYSA-N acetaldehyde Diethyl Acetal Natural products CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 1
- 229960001413 acetanilide Drugs 0.000 description 1
- PXAJQJMDEXJWFB-UHFFFAOYSA-N acetone oxime Chemical compound CC(C)=NO PXAJQJMDEXJWFB-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- XYLMUPLGERFSHI-UHFFFAOYSA-N alpha-Methylstyrene Chemical compound CC(=C)C1=CC=CC=C1 XYLMUPLGERFSHI-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 125000004653 anthracenylene group Chemical group 0.000 description 1
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Chemical class CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 description 1
- 150000004056 anthraquinones Chemical class 0.000 description 1
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 1
- 229960002130 benzoin Drugs 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- 239000012965 benzophenone Substances 0.000 description 1
- 235000019400 benzoyl peroxide Nutrition 0.000 description 1
- AOJOEFVRHOZDFN-UHFFFAOYSA-N benzyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC1=CC=CC=C1 AOJOEFVRHOZDFN-UHFFFAOYSA-N 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- GCTPMLUUWLLESL-UHFFFAOYSA-N benzyl prop-2-enoate Chemical compound C=CC(=O)OCC1=CC=CC=C1 GCTPMLUUWLLESL-UHFFFAOYSA-N 0.000 description 1
- ROPXFXOUUANXRR-BUHFOSPRSA-N bis(2-ethylhexyl) (e)-but-2-enedioate Chemical compound CCCCC(CC)COC(=O)\C=C\C(=O)OCC(CC)CCCC ROPXFXOUUANXRR-BUHFOSPRSA-N 0.000 description 1
- ROPXFXOUUANXRR-YPKPFQOOSA-N bis(2-ethylhexyl) (z)-but-2-enedioate Chemical compound CCCCC(CC)COC(=O)\C=C/C(=O)OCC(CC)CCCC ROPXFXOUUANXRR-YPKPFQOOSA-N 0.000 description 1
- RSRICHZMFPHXLE-AATRIKPKSA-N bis(2-methylpropyl) (e)-but-2-enedioate Chemical compound CC(C)COC(=O)\C=C\C(=O)OCC(C)C RSRICHZMFPHXLE-AATRIKPKSA-N 0.000 description 1
- JYMCPGMXHKUZGC-UHFFFAOYSA-N bis(2-methylpropyl) 2-methylidenebutanedioate Chemical compound CC(C)COC(=O)CC(=C)C(=O)OCC(C)C JYMCPGMXHKUZGC-UHFFFAOYSA-N 0.000 description 1
- JZQAAQZDDMEFGZ-UHFFFAOYSA-N bis(ethenyl) hexanedioate Chemical compound C=COC(=O)CCCCC(=O)OC=C JZQAAQZDDMEFGZ-UHFFFAOYSA-N 0.000 description 1
- QUDWYFHPNIMBFC-UHFFFAOYSA-N bis(prop-2-enyl) benzene-1,2-dicarboxylate Chemical compound C=CCOC(=O)C1=CC=CC=C1C(=O)OCC=C QUDWYFHPNIMBFC-UHFFFAOYSA-N 0.000 description 1
- ZDNFTNPFYCKVTB-UHFFFAOYSA-N bis(prop-2-enyl) benzene-1,4-dicarboxylate Chemical compound C=CCOC(=O)C1=CC=C(C(=O)OCC=C)C=C1 ZDNFTNPFYCKVTB-UHFFFAOYSA-N 0.000 description 1
- FPODCVUTIPDRTE-UHFFFAOYSA-N bis(prop-2-enyl) hexanedioate Chemical compound C=CCOC(=O)CCCCC(=O)OCC=C FPODCVUTIPDRTE-UHFFFAOYSA-N 0.000 description 1
- VYHBFRJRBHMIQZ-UHFFFAOYSA-N bis[4-(diethylamino)phenyl]methanone Chemical compound C1=CC(N(CC)CC)=CC=C1C(=O)C1=CC=C(N(CC)CC)C=C1 VYHBFRJRBHMIQZ-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- SQHOHKQMTHROSF-UHFFFAOYSA-N but-1-en-2-ylbenzene Chemical compound CCC(=C)C1=CC=CC=C1 SQHOHKQMTHROSF-UHFFFAOYSA-N 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- DKVNPHBNOWQYFE-UHFFFAOYSA-N carbamodithioic acid Chemical compound NC(S)=S DKVNPHBNOWQYFE-UHFFFAOYSA-N 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 150000001728 carbonyl compounds Chemical class 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000012663 cationic photopolymerization Methods 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- UUAGAQFQZIEFAH-UHFFFAOYSA-N chlorotrifluoroethylene Chemical group FC(F)=C(F)Cl UUAGAQFQZIEFAH-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229920000547 conjugated polymer Polymers 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 125000004976 cyclobutylene group Chemical group 0.000 description 1
- HPXRVTGHNJAIIH-UHFFFAOYSA-N cyclohexanol Chemical compound OC1CCCCC1 HPXRVTGHNJAIIH-UHFFFAOYSA-N 0.000 description 1
- OIWOHHBRDFKZNC-UHFFFAOYSA-N cyclohexyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC1CCCCC1 OIWOHHBRDFKZNC-UHFFFAOYSA-N 0.000 description 1
- 125000004956 cyclohexylene group Chemical group 0.000 description 1
- 125000004979 cyclopentylene group Chemical group 0.000 description 1
- 125000004980 cyclopropylene group Chemical group 0.000 description 1
- GTBGXKPAKVYEKJ-UHFFFAOYSA-N decyl 2-methylprop-2-enoate Chemical compound CCCCCCCCCCOC(=O)C(C)=C GTBGXKPAKVYEKJ-UHFFFAOYSA-N 0.000 description 1
- FWLDHHJLVGRRHD-UHFFFAOYSA-N decyl prop-2-enoate Chemical compound CCCCCCCCCCOC(=O)C=C FWLDHHJLVGRRHD-UHFFFAOYSA-N 0.000 description 1
- LSXWFXONGKSEMY-UHFFFAOYSA-N di-tert-butyl peroxide Chemical compound CC(C)(C)OOC(C)(C)C LSXWFXONGKSEMY-UHFFFAOYSA-N 0.000 description 1
- 239000012933 diacyl peroxide Substances 0.000 description 1
- CPZVJYPXOWWFSW-VAWYXSNFSA-N dibenzyl (e)-but-2-enedioate Chemical compound C=1C=CC=CC=1COC(=O)/C=C/C(=O)OCC1=CC=CC=C1 CPZVJYPXOWWFSW-VAWYXSNFSA-N 0.000 description 1
- CPZVJYPXOWWFSW-QXMHVHEDSA-N dibenzyl (z)-but-2-enedioate Chemical compound C=1C=CC=CC=1COC(=O)\C=C/C(=O)OCC1=CC=CC=C1 CPZVJYPXOWWFSW-QXMHVHEDSA-N 0.000 description 1
- WZAPMKYCDNQBOC-UHFFFAOYSA-N dibenzyl 2-methylidenebutanedioate Chemical compound C=1C=CC=CC=1COC(=O)C(=C)CC(=O)OCC1=CC=CC=C1 WZAPMKYCDNQBOC-UHFFFAOYSA-N 0.000 description 1
- MWJNGKOBSUBRNM-BQYQJAHWSA-N dibutan-2-yl (e)-but-2-enedioate Chemical compound CCC(C)OC(=O)\C=C\C(=O)OC(C)CC MWJNGKOBSUBRNM-BQYQJAHWSA-N 0.000 description 1
- MWJNGKOBSUBRNM-FPLPWBNLSA-N dibutan-2-yl (z)-but-2-enedioate Chemical compound CCC(C)OC(=O)\C=C/C(=O)OC(C)CC MWJNGKOBSUBRNM-FPLPWBNLSA-N 0.000 description 1
- ITDFSBAXVZGPGN-UHFFFAOYSA-N dibutan-2-yl 2-methylidenebutanedioate Chemical compound CCC(C)OC(=O)CC(=C)C(=O)OC(C)CC ITDFSBAXVZGPGN-UHFFFAOYSA-N 0.000 description 1
- JBSLOWBPDRZSMB-BQYQJAHWSA-N dibutyl (e)-but-2-enedioate Chemical compound CCCCOC(=O)\C=C\C(=O)OCCCC JBSLOWBPDRZSMB-BQYQJAHWSA-N 0.000 description 1
- JBSLOWBPDRZSMB-FPLPWBNLSA-N dibutyl (z)-but-2-enedioate Chemical compound CCCCOC(=O)\C=C/C(=O)OCCCC JBSLOWBPDRZSMB-FPLPWBNLSA-N 0.000 description 1
- OGVXYCDTRMDYOG-UHFFFAOYSA-N dibutyl 2-methylidenebutanedioate Chemical compound CCCCOC(=O)CC(=C)C(=O)OCCCC OGVXYCDTRMDYOG-UHFFFAOYSA-N 0.000 description 1
- ZEFVHSWKYCYFFL-UHFFFAOYSA-N diethyl 2-methylidenebutanedioate Chemical compound CCOC(=O)CC(=C)C(=O)OCC ZEFVHSWKYCYFFL-UHFFFAOYSA-N 0.000 description 1
- IEPRKVQEAMIZSS-AATRIKPKSA-N diethyl fumarate Chemical compound CCOC(=O)\C=C\C(=O)OCC IEPRKVQEAMIZSS-AATRIKPKSA-N 0.000 description 1
- 125000001028 difluoromethyl group Chemical group [H]C(F)(F)* 0.000 description 1
- ZWWQRMFIZFPUAA-UHFFFAOYSA-N dimethyl 2-methylidenebutanedioate Chemical compound COC(=O)CC(=C)C(=O)OC ZWWQRMFIZFPUAA-UHFFFAOYSA-N 0.000 description 1
- LDCRTTXIJACKKU-ONEGZZNKSA-N dimethyl fumarate Chemical compound COC(=O)\C=C\C(=O)OC LDCRTTXIJACKKU-ONEGZZNKSA-N 0.000 description 1
- 229960004419 dimethyl fumarate Drugs 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- LDCRTTXIJACKKU-ARJAWSKDSA-N dimethyl maleate Chemical compound COC(=O)\C=C/C(=O)OC LDCRTTXIJACKKU-ARJAWSKDSA-N 0.000 description 1
- BEPAFCGSDWSTEL-UHFFFAOYSA-N dimethyl malonate Chemical compound COC(=O)CC(=O)OC BEPAFCGSDWSTEL-UHFFFAOYSA-N 0.000 description 1
- FNMTVMWFISHPEV-AATRIKPKSA-N dipropan-2-yl (e)-but-2-enedioate Chemical compound CC(C)OC(=O)\C=C\C(=O)OC(C)C FNMTVMWFISHPEV-AATRIKPKSA-N 0.000 description 1
- FNMTVMWFISHPEV-WAYWQWQTSA-N dipropan-2-yl (z)-but-2-enedioate Chemical compound CC(C)OC(=O)\C=C/C(=O)OC(C)C FNMTVMWFISHPEV-WAYWQWQTSA-N 0.000 description 1
- IJBBERPAEBYDJT-UHFFFAOYSA-N dipropan-2-yl 2-methylidenebutanedioate Chemical compound CC(C)OC(=O)CC(=C)C(=O)OC(C)C IJBBERPAEBYDJT-UHFFFAOYSA-N 0.000 description 1
- YCWQBZCTYWZZAX-UHFFFAOYSA-N ditert-butyl 7,8-dioxabicyclo[4.2.0]octane-3,6-dicarboxylate Chemical compound C1C(C(=O)OC(C)(C)C)CCC2(C(=O)OC(C)(C)C)OOC21 YCWQBZCTYWZZAX-UHFFFAOYSA-N 0.000 description 1
- GKCPCPKXFGQXGS-UHFFFAOYSA-N ditert-butyldiazene Chemical compound CC(C)(C)N=NC(C)(C)C GKCPCPKXFGQXGS-UHFFFAOYSA-N 0.000 description 1
- 239000012990 dithiocarbamate Substances 0.000 description 1
- WNAHIZMDSQCWRP-UHFFFAOYSA-N dodecane-1-thiol Chemical compound CCCCCCCCCCCCS WNAHIZMDSQCWRP-UHFFFAOYSA-N 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- NHOGGUYTANYCGQ-UHFFFAOYSA-N ethenoxybenzene Chemical compound C=COC1=CC=CC=C1 NHOGGUYTANYCGQ-UHFFFAOYSA-N 0.000 description 1
- MEGHWIAOTJPCHQ-UHFFFAOYSA-N ethenyl butanoate Chemical compound CCCC(=O)OC=C MEGHWIAOTJPCHQ-UHFFFAOYSA-N 0.000 description 1
- UIWXSTHGICQLQT-UHFFFAOYSA-N ethenyl propanoate Chemical compound CCC(=O)OC=C UIWXSTHGICQLQT-UHFFFAOYSA-N 0.000 description 1
- XYIBRDXRRQCHLP-UHFFFAOYSA-N ethyl acetoacetate Chemical compound CCOC(=O)CC(C)=O XYIBRDXRRQCHLP-UHFFFAOYSA-N 0.000 description 1
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 1
- STVZJERGLQHEKB-UHFFFAOYSA-N ethylene glycol dimethacrylate Substances CC(=C)C(=O)OCCOC(=O)C(C)=C STVZJERGLQHEKB-UHFFFAOYSA-N 0.000 description 1
- 150000002220 fluorenes Chemical class 0.000 description 1
- 125000003784 fluoroethyl group Chemical group [H]C([H])(F)C([H])([H])* 0.000 description 1
- 125000004216 fluoromethyl group Chemical group [H]C([H])(F)* 0.000 description 1
- 125000001207 fluorophenyl group Chemical group 0.000 description 1
- 229910003472 fullerene Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 235000019382 gum benzoic Nutrition 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- LNCPIMCVTKXXOY-UHFFFAOYSA-N hexyl 2-methylprop-2-enoate Chemical compound CCCCCCOC(=O)C(C)=C LNCPIMCVTKXXOY-UHFFFAOYSA-N 0.000 description 1
- LNMQRPPRQDGUDR-UHFFFAOYSA-N hexyl prop-2-enoate Chemical compound CCCCCCOC(=O)C=C LNMQRPPRQDGUDR-UHFFFAOYSA-N 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- YAMHXTCMCPHKLN-UHFFFAOYSA-N imidazolidin-2-one Chemical compound O=C1NCCN1 YAMHXTCMCPHKLN-UHFFFAOYSA-N 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- MGFYSGNNHQQTJW-UHFFFAOYSA-N iodonium Chemical compound [IH2+] MGFYSGNNHQQTJW-UHFFFAOYSA-N 0.000 description 1
- 229940119545 isobornyl methacrylate Drugs 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- RBQRWNWVPQDTJJ-UHFFFAOYSA-N methacryloyloxyethyl isocyanate Chemical compound CC(=C)C(=O)OCCN=C=O RBQRWNWVPQDTJJ-UHFFFAOYSA-N 0.000 description 1
- SNZRPPBWRSEVIU-UHFFFAOYSA-N methyl 4-chloropyridine-3-carboxylate Chemical compound COC(=O)C1=CN=CC=C1Cl SNZRPPBWRSEVIU-UHFFFAOYSA-N 0.000 description 1
- XJRBAMWJDBPFIM-UHFFFAOYSA-N methyl vinyl ether Chemical compound COC=C XJRBAMWJDBPFIM-UHFFFAOYSA-N 0.000 description 1
- XKBGEWXEAPTVCK-UHFFFAOYSA-M methyltrioctylammonium chloride Chemical compound [Cl-].CCCCCCCC[N+](C)(CCCCCCCC)CCCCCCCC XKBGEWXEAPTVCK-UHFFFAOYSA-M 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- QRWZCJXEAOZAAW-UHFFFAOYSA-N n,n,2-trimethylprop-2-enamide Chemical compound CN(C)C(=O)C(C)=C QRWZCJXEAOZAAW-UHFFFAOYSA-N 0.000 description 1
- JMCVCHBBHPFWBF-UHFFFAOYSA-N n,n-diethyl-2-methylprop-2-enamide Chemical compound CCN(CC)C(=O)C(C)=C JMCVCHBBHPFWBF-UHFFFAOYSA-N 0.000 description 1
- OVHHHVAVHBHXAK-UHFFFAOYSA-N n,n-diethylprop-2-enamide Chemical compound CCN(CC)C(=O)C=C OVHHHVAVHBHXAK-UHFFFAOYSA-N 0.000 description 1
- 229940088644 n,n-dimethylacrylamide Drugs 0.000 description 1
- YLGYACDQVQQZSW-UHFFFAOYSA-N n,n-dimethylprop-2-enamide Chemical compound CN(C)C(=O)C=C YLGYACDQVQQZSW-UHFFFAOYSA-N 0.000 description 1
- WHIVNJATOVLWBW-UHFFFAOYSA-N n-butan-2-ylidenehydroxylamine Chemical compound CCC(C)=NO WHIVNJATOVLWBW-UHFFFAOYSA-N 0.000 description 1
- PNLUGRYDUHRLOF-UHFFFAOYSA-N n-ethenyl-n-methylacetamide Chemical compound C=CN(C)C(C)=O PNLUGRYDUHRLOF-UHFFFAOYSA-N 0.000 description 1
- 125000004957 naphthylene group Chemical group 0.000 description 1
- SNQQPOLDUKLAAF-UHFFFAOYSA-N nonylphenol Chemical compound CCCCCCCCCC1=CC=CC=C1O SNQQPOLDUKLAAF-UHFFFAOYSA-N 0.000 description 1
- SFBTTWXNCQVIEC-UHFFFAOYSA-N o-Vinylanisole Chemical compound COC1=CC=CC=C1C=C SFBTTWXNCQVIEC-UHFFFAOYSA-N 0.000 description 1
- NZIDBRBFGPQCRY-UHFFFAOYSA-N octyl 2-methylprop-2-enoate Chemical compound CCCCCCCCOC(=O)C(C)=C NZIDBRBFGPQCRY-UHFFFAOYSA-N 0.000 description 1
- 229940065472 octyl acrylate Drugs 0.000 description 1
- ANISOHQJBAQUQP-UHFFFAOYSA-N octyl prop-2-enoate Chemical compound CCCCCCCCOC(=O)C=C ANISOHQJBAQUQP-UHFFFAOYSA-N 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- HDBWAWNLGGMZRQ-UHFFFAOYSA-N p-Vinylbiphenyl Chemical group C1=CC(C=C)=CC=C1C1=CC=CC=C1 HDBWAWNLGGMZRQ-UHFFFAOYSA-N 0.000 description 1
- YJVFFLUZDVXJQI-UHFFFAOYSA-L palladium(ii) acetate Chemical compound [Pd+2].CC([O-])=O.CC([O-])=O YJVFFLUZDVXJQI-UHFFFAOYSA-L 0.000 description 1
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 1
- HVAMZGADVCBITI-UHFFFAOYSA-M pent-4-enoate Chemical compound [O-]C(=O)CCC=C HVAMZGADVCBITI-UHFFFAOYSA-M 0.000 description 1
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- 125000000538 pentafluorophenyl group Chemical group FC1=C(F)C(F)=C(*)C(F)=C1F 0.000 description 1
- 125000004817 pentamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 description 1
- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Natural products CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 description 1
- 150000004978 peroxycarbonates Chemical class 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- QIWKUEJZZCOPFV-UHFFFAOYSA-N phenyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC1=CC=CC=C1 QIWKUEJZZCOPFV-UHFFFAOYSA-N 0.000 description 1
- WRAQQYDMVSCOTE-UHFFFAOYSA-N phenyl prop-2-enoate Chemical compound C=CC(=O)OC1=CC=CC=C1 WRAQQYDMVSCOTE-UHFFFAOYSA-N 0.000 description 1
- WVDDGKGOMKODPV-ZQBYOMGUSA-N phenyl(114C)methanol Chemical compound O[14CH2]C1=CC=CC=C1 WVDDGKGOMKODPV-ZQBYOMGUSA-N 0.000 description 1
- HXITXNWTGFUOAU-UHFFFAOYSA-N phenylboronic acid Chemical compound OB(O)C1=CC=CC=C1 HXITXNWTGFUOAU-UHFFFAOYSA-N 0.000 description 1
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical class N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 239000006187 pill Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920000083 poly(allylamine) Polymers 0.000 description 1
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920001088 polycarbazole Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- BOQSSGDQNWEFSX-UHFFFAOYSA-N propan-2-yl 2-methylprop-2-enoate Chemical compound CC(C)OC(=O)C(C)=C BOQSSGDQNWEFSX-UHFFFAOYSA-N 0.000 description 1
- LYBIZMNPXTXVMV-UHFFFAOYSA-N propan-2-yl prop-2-enoate Chemical compound CC(C)OC(=O)C=C LYBIZMNPXTXVMV-UHFFFAOYSA-N 0.000 description 1
- BWJUFXUULUEGMA-UHFFFAOYSA-N propan-2-yl propan-2-yloxycarbonyloxy carbonate Chemical compound CC(C)OC(=O)OOC(=O)OC(C)C BWJUFXUULUEGMA-UHFFFAOYSA-N 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 125000003226 pyrazolyl group Chemical group 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 150000003222 pyridines Chemical class 0.000 description 1
- LISFMEBWQUVKPJ-UHFFFAOYSA-N quinolin-2-ol Chemical compound C1=CC=C2NC(=O)C=CC2=C1 LISFMEBWQUVKPJ-UHFFFAOYSA-N 0.000 description 1
- MYGFXCLXHGITIQ-UHFFFAOYSA-N quinolin-4-ylhydrazine Chemical compound C1=CC=C2C(NN)=CC=NC2=C1 MYGFXCLXHGITIQ-UHFFFAOYSA-N 0.000 description 1
- 239000007870 radical polymerization initiator Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 235000010267 sodium hydrogen sulphite Nutrition 0.000 description 1
- KBXGMZXLKCUSEB-UHFFFAOYSA-M sodium;[ethyl(oxidosulfinothioyl)amino]ethane Chemical compound [Na+].CCN(CC)S([O-])=S KBXGMZXLKCUSEB-UHFFFAOYSA-M 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229960002317 succinimide Drugs 0.000 description 1
- 150000003464 sulfur compounds Chemical class 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- PFBLRDXPNUJYJM-UHFFFAOYSA-N tert-butyl 2-methylpropaneperoxoate Chemical compound CC(C)C(=O)OOC(C)(C)C PFBLRDXPNUJYJM-UHFFFAOYSA-N 0.000 description 1
- VEQHTYHLJYNSTG-UHFFFAOYSA-N tert-butyl 9-tert-butylperoxy-9-oxononanoate Chemical compound CC(C)(C)OOC(=O)CCCCCCCC(=O)OC(C)(C)C VEQHTYHLJYNSTG-UHFFFAOYSA-N 0.000 description 1
- GJBRNHKUVLOCEB-UHFFFAOYSA-N tert-butyl benzenecarboperoxoate Chemical compound CC(C)(C)OOC(=O)C1=CC=CC=C1 GJBRNHKUVLOCEB-UHFFFAOYSA-N 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- PCCVSPMFGIFTHU-UHFFFAOYSA-N tetracyanoquinodimethane Chemical class N#CC(C#N)=C1C=CC(=C(C#N)C#N)C=C1 PCCVSPMFGIFTHU-UHFFFAOYSA-N 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- FHCPAXDKURNIOZ-UHFFFAOYSA-N tetrathiafulvalene Chemical class S1C=CSC1=C1SC=CS1 FHCPAXDKURNIOZ-UHFFFAOYSA-N 0.000 description 1
- YRHRIQCWCFGUEQ-UHFFFAOYSA-N thioxanthen-9-one Chemical class C1=CC=C2C(=O)C3=CC=CC=C3SC2=C1 YRHRIQCWCFGUEQ-UHFFFAOYSA-N 0.000 description 1
- 125000004205 trifluoroethyl group Chemical group [H]C([H])(*)C(F)(F)F 0.000 description 1
- COIOYMYWGDAQPM-UHFFFAOYSA-N tris(2-methylphenyl)phosphane Chemical compound CC1=CC=CC=C1P(C=1C(=CC=CC=1)C)C1=CC=CC=C1C COIOYMYWGDAQPM-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- KOZCZZVUFDCZGG-UHFFFAOYSA-N vinyl benzoate Chemical compound C=COC(=O)C1=CC=CC=C1 KOZCZZVUFDCZGG-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D127/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Coating compositions based on derivatives of such polymers
- C09D127/02—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Coating compositions based on derivatives of such polymers not modified by chemical after-treatment
- C09D127/12—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Coating compositions based on derivatives of such polymers not modified by chemical after-treatment containing fluorine atoms
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L71/00—Compositions of polyethers obtained by reactions forming an ether link in the main chain; Compositions of derivatives of such polymers
- C08L71/02—Polyalkylene oxides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Thin Film Transistor (AREA)
- Formation Of Insulating Films (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Description
本発明は、有機薄膜トランジスタが有する絶縁層を形成するのに適した有機薄膜トランジスタ絶縁層用組成物に関し、特にオーバーコート絶縁層を形成するのに適した有機薄膜トランジスタ絶縁層用組成物に関する。 The present invention relates to an organic thin film transistor insulating layer composition suitable for forming an insulating layer of an organic thin film transistor, and particularly to an organic thin film transistor insulating layer composition suitable for forming an overcoat insulating layer.
有機薄膜トランジスタは、無機半導体より低温で製造できるため、その基板としてプラスチック基板やフィルムを用いることができ、このような基板を用いることによりフレキシブルであり、軽量で壊れにくい素子を得ることができる。また、有機材料を含む溶液の塗布や印刷法を用いた成膜により素子作製が可能な場合があり、大面積の基板に多数の素子を低コストで製造することが可能な場合がある。 Since an organic thin film transistor can be manufactured at a lower temperature than an inorganic semiconductor, a plastic substrate or a film can be used as the substrate. By using such a substrate, an element that is flexible, lightweight, and hardly broken can be obtained. In some cases, an element can be manufactured by application of a solution containing an organic material or film formation using a printing method, and a large number of elements can be manufactured on a large-area substrate at low cost.
さらに、トランジスタの検討に用いることができる材料の種類が豊富であるため、分子構造の異なる材料を検討に用いれば、幅広い範囲の特性のバリエーションを有する素子を製造することができる。 In addition, since there are a wide variety of materials that can be used for studying transistors, if materials having different molecular structures are used for studying, elements having a wide range of characteristics can be manufactured.
有機薄膜トランジスタの1種である電界効果型有機薄膜トランジスタでは、ゲート電極に印加される電圧がゲート絶縁層を介して半導体層に作用して、ドレイン電流の電流量を制御する。そのため、ゲート電極と半導体層の間にはゲート絶縁層が形成される。 In a field effect organic thin film transistor which is a kind of organic thin film transistor, a voltage applied to a gate electrode acts on a semiconductor layer through a gate insulating layer to control the amount of drain current. Therefore, a gate insulating layer is formed between the gate electrode and the semiconductor layer.
また、電界効果型有機薄膜トランジスタに用いられる有機半導体化合物は、湿度、酸素等の環境の影響を受けやすく、トランジスタ特性が、湿度、酸素等に起因する経時劣化を起こしやすい。 An organic semiconductor compound used for a field effect organic thin film transistor is easily affected by an environment such as humidity and oxygen, and the transistor characteristics are likely to deteriorate with time due to humidity, oxygen and the like.
そのため、有機半導体化合物が剥き出しになるボトムゲート型有機電界効果トランジスタ素子構造では、素子構造全体を覆うオーバーコート層を形成して有機半導体化合物を外気との接触から保護することが必須となっている。一方、トップゲート型有機電界効果トランジスタ素子構造では、有機半導体化合物はゲート絶縁層によりコートされて保護されている。 Therefore, in the bottom gate type organic field effect transistor element structure in which the organic semiconductor compound is exposed, it is essential to form an overcoat layer covering the entire element structure to protect the organic semiconductor compound from contact with the outside air. . On the other hand, in the top gate type organic field effect transistor element structure, the organic semiconductor compound is coated and protected by a gate insulating layer.
このように、電界効果型有機薄膜トランジスタにおける有機半導体層を覆うオーバーコート絶縁層又はゲート絶縁層を形成するために、高分子化合物と溶剤とを含有する組成物が用いられる。本願明細書では、上記オーバーコート絶縁層、ゲート絶縁層などの有機薄膜トランジスタの絶縁層又は絶縁膜を有機薄膜トランジスタ絶縁層という。 Thus, in order to form the overcoat insulating layer or gate insulating layer which covers the organic-semiconductor layer in a field effect type organic thin-film transistor, the composition containing a high molecular compound and a solvent is used. In the present specification, an insulating layer or an insulating film of an organic thin film transistor such as the overcoat insulating layer and the gate insulating layer is referred to as an organic thin film transistor insulating layer.
有機薄膜トランジスタ絶縁層を構成する材料(以下、有機薄膜トランジスタ絶縁層材料と記す)としては、例えば、テトラフルオロエチレンを含む共重合体が提案されている(特許文献1)。 As a material constituting the organic thin film transistor insulating layer (hereinafter referred to as an organic thin film transistor insulating layer material), for example, a copolymer containing tetrafluoroethylene has been proposed (Patent Document 1).
しかしながら、大気中の酸素又は水分が有機薄膜トランジスタ内部に侵入すると、有機半導体化合物に作用し、電荷のトラップが形成され、閾値電圧の絶対値が上昇する。それゆえ、上記有機薄膜トランジスタ絶縁層材料を用いて形成した絶縁層を含む有機電界効果トランジスタは、大気中で駆動する場合の閾値電圧の絶対値が大きいという課題がある。 However, when oxygen or moisture in the atmosphere enters the organic thin film transistor, it acts on the organic semiconductor compound, a charge trap is formed, and the absolute value of the threshold voltage increases. Therefore, an organic field effect transistor including an insulating layer formed using the organic thin film transistor insulating layer material has a problem that the absolute value of the threshold voltage when driven in the atmosphere is large.
本発明の目的は、大気中で駆動する場合の閾値電圧の絶対値が小さい有機薄膜トランジスタを製造しうる有機薄膜トランジスタ絶縁層用組成物を提供することである。 The objective of this invention is providing the composition for organic thin-film transistor insulating layers which can manufacture the organic thin-film transistor with a small absolute value of the threshold voltage when driving in air | atmosphere.
即ち、本発明は、環状エーテル構造を有する基を含有する化合物(A)と、含フッ素溶媒(B)とを含む有機薄膜トランジスタ絶縁層用組成物を提供する。 That is, this invention provides the composition for organic thin-film transistor insulating layers containing the compound (A) containing group which has a cyclic ether structure, and a fluorine-containing solvent (B).
ある一形態においては、前記環状エーテル構造を有する基が、式(1) In one certain form, group which has the said cyclic ether structure is Formula (1).
[式中、R1〜R3は、それぞれ独立に、水素原子又は炭素数1〜20の一価の有機基を表す。該有機基中の水素原子はフッ素原子で置換されていてもよい。]
で表される基及び、式(2)
[In formula, R < 1 > -R < 3 > represents a hydrogen atom or a C1-C20 monovalent organic group each independently. A hydrogen atom in the organic group may be substituted with a fluorine atom. ]
A group represented by formula (2)
[式中、R4〜R8は、それぞれ独立に、水素原子又は炭素数1〜20の一価の有機基を表す。該有機基中の水素原子はフッ素原子で置換されていてもよい。]
で表される基からなる群から選ばれる少なくとも1種の基である。
[In formula, R < 4 > -R < 8 > represents a hydrogen atom or a C1-C20 monovalent organic group each independently. A hydrogen atom in the organic group may be substituted with a fluorine atom. ]
Is at least one group selected from the group consisting of groups represented by:
ある一形態においては、前記含フッ素溶媒が、炭素数6〜20の芳香族フッ素化合物である。 In one certain form, the said fluorine-containing solvent is a C6-C20 aromatic fluorine compound.
ある一形態においては、前記有機薄膜トランジスタ絶縁層用組成物は、更に、フッ素樹脂(C)を含む。 In one certain form, the said composition for organic thin-film transistor insulating layers contains a fluororesin (C) further.
ある一形態においては、前記フッ素樹脂(C)が、下に定義されるフッ素樹脂(C−1)及び下に定義されるフッ素樹脂(C−2)からなる群から選ばれる少なくとも1種のフッ素樹脂である。
フッ素樹脂(C−1):
式(3)
In one certain form, the said fluororesin (C) is at least 1 sort (s) of fluorine chosen from the group which consists of the fluororesin (C-1) defined below and the fluororesin (C-2) defined below. Resin.
Fluororesin (C-1):
Formula (3)
[式中、Xは、フッ素原子を有する炭素数1〜20の一価の有機基、フッ素原子又は塩素原子を表す。]
で表される繰り返し単位と、式(4)
[In formula, X represents a C1-C20 monovalent organic group which has a fluorine atom, a fluorine atom, or a chlorine atom. ]
A repeating unit represented by formula (4)
[式中、R9は、アルキレン基を表す。該アルキレン基中の水素原子は、フッ素原子で置換されていてもよい。]
で表される繰り返し単位とを含有するフッ素樹脂
フッ素樹脂(C−2):
式(5)
[Wherein R 9 represents an alkylene group. A hydrogen atom in the alkylene group may be substituted with a fluorine atom. ]
Fluororesin (C-2) containing a repeating unit represented by:
Formula (5)
[式中、R10〜R12は、それぞれ独立に、水素原子又は炭素数1〜20の一価の有機基を表す。該有機基中の水素原子はフッ素原子で置換されていてもよい。Rは、水素原子又は炭素数1〜20の一価の有機基を表す。Rfは、フッ素原子又はフッ素原子を有する炭素数1〜20の一価の有機基を表す。Raaは、炭素数1〜20の二価の有機基を表す。該二価の有機基中の水素原子は、フッ素原子で置換されていてもよい。aは、0〜20の整数を表し、mは、1〜5の整数を表す。Raaが複数個ある場合、それらは同一でも相異なっていてもよい。Rが複数個ある場合、それらは同一でも相異なっていてもよい。Rfが複数個ある場合、それらは同一でも相異なっていてもよい。]で表される繰り返し単位を含有し、かつ、第1の官能基を2つ以上含有し、該第1の官能基が、電磁波の照射もしくは熱の作用により、活性水素と反応する第2の官能基を生成する官能基であるフッ素樹脂 [In formula, R < 10 > -R < 12 > represents a hydrogen atom or a C1-C20 monovalent organic group each independently. A hydrogen atom in the organic group may be substituted with a fluorine atom. R represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms. Rf represents a fluorine atom or a monovalent organic group having 1 to 20 carbon atoms having a fluorine atom. Raa represents a C1-C20 divalent organic group. A hydrogen atom in the divalent organic group may be substituted with a fluorine atom. a represents an integer of 0 to 20, and m represents an integer of 1 to 5. When there are a plurality of Raa, they may be the same or different. When there are a plurality of R, they may be the same or different. When there are a plurality of Rf, they may be the same or different. And a second unit that contains two or more first functional groups, and the first functional group reacts with active hydrogen by irradiation of electromagnetic waves or heat. Fluororesin, a functional group that generates functional groups
ある一形態においては、上記第1の官能基が、ブロック化剤でブロックされたイソシアナト基及びブロック化剤でブロックされたイソチオシアナト基からなる群から選ばれる少なくとも1種の基である。 In one certain form, the said 1st functional group is at least 1 sort (s) of group chosen from the group which consists of the isocyanato group blocked with the blocking agent, and the isothiocyanate group blocked with the blocking agent.
ある一形態においては、前記第1の官能基が、式(6) In one certain form, the said 1st functional group is a formula (6).
[式中、Xaは、酸素原子又は硫黄原子を表す。R13及びR14は、それぞれ独立に、水素原子又は炭素数1〜20の一価の有機基を表す。]
で表される基である。
[Wherein, Xa represents an oxygen atom or a sulfur atom. R 13 and R 14 each independently represent a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms. ]
It is group represented by these.
ある一形態においては、前記第1の官能基が、式(7) In one certain form, the said 1st functional group is a formula (7).
[式中、Xbは、酸素原子又は硫黄原子を表す。R15、R16及びR17は、それぞれ独立に、水素原子又は炭素数1〜20の一価の有機基を表す。]
で表される基である。
[Wherein, Xb represents an oxygen atom or a sulfur atom. R 15 , R 16 and R 17 each independently represent a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms. ]
It is group represented by these.
また、本発明は、ソース電極と、ドレイン電極と、ゲート電極と、有機半導体層と、前記いずれかの有機薄膜トランジスタ絶縁層用組成物を用いて形成した絶縁層とを有する有機薄膜トランジスタを提供する。 Moreover, this invention provides the organic thin-film transistor which has a source electrode, a drain electrode, a gate electrode, an organic-semiconductor layer, and the insulating layer formed using one of the said compositions for organic thin-film transistor insulating layers.
ある一形態においては、前記絶縁層がオーバーコート絶縁層である。 In one certain form, the said insulating layer is an overcoat insulating layer.
また、本発明は、前記有機薄膜トランジスタを含むディスプレイ用部材を提供する。 In addition, the present invention provides a display member including the organic thin film transistor.
また、本発明は、前記ディスプレイ用部材を含むディスプレイを提供する。 The present invention also provides a display including the display member.
本発明の有機薄膜トランジスタ絶縁層用組成物を用いて製造した有機薄膜トランジスタは、大気中で駆動する場合の閾値電圧の絶対値が小さい。 The organic thin film transistor manufactured using the composition for an organic thin film transistor insulating layer of the present invention has a small absolute value of the threshold voltage when driven in the atmosphere.
次に、本発明をさらに詳細に説明する。 Next, the present invention will be described in more detail.
(有機薄膜トランジスタ絶縁用組成物)
<化合物(A)>
本発明の有機薄膜トランジスタ絶縁層用組成物に含まれる化合物(A)は、環状エーテル構造を有する基を有する。環状エーテル構造とは環状の炭化水素の炭素が酸素で置換された構造をいう。環状エーテル構造中の環を形成する原子数は、10以下が好ましく、6以下がより好ましい。環状エーテル構造中の環を形成する酸素の数は、2以下が好ましく、1がより好ましい。
(Organic thin film transistor insulating composition)
<Compound (A)>
The compound (A) contained in the composition for an organic thin film transistor insulating layer of the present invention has a group having a cyclic ether structure. The cyclic ether structure refers to a structure in which carbon of a cyclic hydrocarbon is substituted with oxygen. The number of atoms forming the ring in the cyclic ether structure is preferably 10 or less, and more preferably 6 or less. The number of oxygen forming the ring in the cyclic ether structure is preferably 2 or less, and more preferably 1.
前記環状エーテル構造を有する基は、加熱又は光照射等によりカチオンを生成するカチオン重合開始剤により開環して相互に付加反応する。その結果、化合物(A)は重合して高分子化し、高い引張り強度を示す皮膜が形成される。 The groups having a cyclic ether structure are subjected to an addition reaction with each other by ring opening by a cationic polymerization initiator that generates cations by heating or light irradiation. As a result, the compound (A) is polymerized to become a polymer, and a film showing high tensile strength is formed.
環状エーテル構造を有する基は、式(1)で表される基及び式(2)で表される基からなる群から選ばれる少なくとも1種であることが好ましい。中でも、式(2)で表される基は耐溶剤性に優れる皮膜を提供することから、特に好ましい。 The group having a cyclic ether structure is preferably at least one selected from the group consisting of a group represented by the formula (1) and a group represented by the formula (2). Among them, the group represented by the formula (2) is particularly preferable because it provides a film having excellent solvent resistance.
式(1)及び(2)中、R1〜R8は、それぞれ独立に、水素原子又は炭素数1〜20の一価の有機基を表す。該有機基中の水素原子はフッ素原子で置換されていてもよい。 In formulas (1) and (2), R 1 to R 8 each independently represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms. A hydrogen atom in the organic group may be substituted with a fluorine atom.
炭素数1〜20の一価の有機基は、直鎖、分岐、環状のいずれであってもよく、飽和であっても不飽和であってもよい。 The monovalent organic group having 1 to 20 carbon atoms may be linear, branched or cyclic, and may be saturated or unsaturated.
炭素数1〜20の一価の有機基としては、例えば、炭素数1〜20の直鎖状炭化水素基、炭素数3〜20の分岐状炭化水素基、炭素数3〜20の環状炭化水素基、炭素数6〜20の芳香族炭化水素基が挙げられ、好ましくは、炭素数1〜6の直鎖状炭化水素基、炭素数3〜6の分岐状炭化水素基、炭素数3〜6の環状炭化水素基、炭素数6〜20の芳香族炭化水素基である。 Examples of the monovalent organic group having 1 to 20 carbon atoms include a linear hydrocarbon group having 1 to 20 carbon atoms, a branched hydrocarbon group having 3 to 20 carbon atoms, and a cyclic hydrocarbon having 3 to 20 carbon atoms. Group, an aromatic hydrocarbon group having 6 to 20 carbon atoms, preferably a linear hydrocarbon group having 1 to 6 carbon atoms, a branched hydrocarbon group having 3 to 6 carbon atoms, or 3 to 6 carbon atoms. These are cyclic hydrocarbon groups and aromatic hydrocarbon groups having 6 to 20 carbon atoms.
炭素数1〜20の直鎖状炭化水素基、炭素数3〜20の分岐状炭化水素基、炭素数3〜20の環状炭化水素基は、これらの基に含まれる水素原子がフッ素原子で置換されていてもよい。 In the straight chain hydrocarbon group having 1 to 20 carbon atoms, the branched hydrocarbon group having 3 to 20 carbon atoms, and the cyclic hydrocarbon group having 3 to 20 carbon atoms, the hydrogen atoms contained in these groups are substituted with fluorine atoms. May be.
炭素数6〜20の芳香族炭化水素基は、基中の水素原子がアルキル基、ハロゲン原子などで置換されていてもよい。 In the aromatic hydrocarbon group having 6 to 20 carbon atoms, a hydrogen atom in the group may be substituted with an alkyl group, a halogen atom or the like.
置換基を有していてもよい炭素数1〜20の一価の有機基としては、メチル基、エチル基、プロピル基、ブチル基、ペンチル基、ヘキシル基、イソプロピル基、イソブチル基、ターシャリーブチル基、シクロプロピル基、シクロブチル基、シクロペンチル基、シクロヘキシル基、シクロペンチニル基、シクロヘキシニル基、トリフルオロメチル基、トリフルオロエチル基、フェニル基、ナフチル基、アンスリル基、トリル基、キシリル基、ジメチルフェニル基、トリメチルフェニル基、エチルフェニル基、ジエチルフェニル基、トリエチルフェニル基、プロピルフェニル基、ブチルフェニル基、メチルナフチル基、ジメチルナフチル基、トリメチルナフチル基、ビニルナフチル基、メチルアンスリル基、エチルアンスリル基、ペンタフルオロフェニル基、トリフルオロメチルフェニル基、クロロフェニル基、ブロモフェニル基などが挙げられる。 Examples of the monovalent organic group having 1 to 20 carbon atoms which may have a substituent include methyl, ethyl, propyl, butyl, pentyl, hexyl, isopropyl, isobutyl, and tertiary butyl. Group, cyclopropyl group, cyclobutyl group, cyclopentyl group, cyclohexyl group, cyclopentynyl group, cyclohexynyl group, trifluoromethyl group, trifluoroethyl group, phenyl group, naphthyl group, anthryl group, tolyl group, xylyl group, dimethyl group Phenyl group, trimethylphenyl group, ethylphenyl group, diethylphenyl group, triethylphenyl group, propylphenyl group, butylphenyl group, methylnaphthyl group, dimethylnaphthyl group, trimethylnaphthyl group, vinylnaphthyl group, methylanthryl group, ethylan Thrill group, pentafluoro Eniru group, trifluoromethylphenyl group, chlorophenyl group and a bromophenyl group.
炭素数1〜20の一価の有機基としては、アルキル基が好ましい。 As the monovalent organic group having 1 to 20 carbon atoms, an alkyl group is preferable.
環状エーテル構造を有する基としは、エポキシ構造を有する基、オキセタン構造を有する基等が挙げられる。オキセタン構造を有する基には、3−エチルオキセタン構造を有する基が含まれる。 Examples of the group having a cyclic ether structure include a group having an epoxy structure and a group having an oxetane structure. The group having an oxetane structure includes a group having a 3-ethyloxetane structure.
化合物(A)の環状構造を有する基を除いた部分は、水素原子又は有機基である。有機基の価数は、化合物(A)に含有される環状エーテル構造を有する基の個数である。該有機基としては、炭素数1〜20の一価の有機基、炭素数1〜20の二価の有機基等が挙げられる。 The part except the group having a cyclic structure of the compound (A) is a hydrogen atom or an organic group. The valence of the organic group is the number of groups having a cyclic ether structure contained in the compound (A). Examples of the organic group include a monovalent organic group having 1 to 20 carbon atoms and a divalent organic group having 1 to 20 carbon atoms.
化合物(A)の具体例としては、ビス(3’−グリシジルオキシプロピル)−1,1,3,3−テトラメチルジシロキサン、3−エチル−3−(2’−エチルヘキシルオキシメチ
ル)−オキセタン、3−エチル−3−{[(3−エチル−オキセタン−3−イル)メトキシ]メチル}オキセタンが挙げられる。
Specific examples of the compound (A) include bis (3′-glycidyloxypropyl) -1,1,3,3-tetramethyldisiloxane, 3-ethyl-3- (2′-ethylhexyloxymethyl) -oxetane, 3-ethyl-3-{[(3-ethyl-oxetane-3-yl) methoxy] methyl} oxetane.
<含フッ素溶媒(B)>
本発明の有機薄膜トランジスタ絶縁層用組成物に含まれる含フッ素溶媒(B)は、有機薄膜トランジスタを製造する際に用いられる通常の環境条件の下で、組成物中の化合物(A)を流動化可能であり、また揮発可能である、フッ素原子を有する有機化合物である。
<Fluorine-containing solvent (B)>
The fluorine-containing solvent (B) contained in the composition for an organic thin film transistor insulating layer of the present invention can fluidize the compound (A) in the composition under normal environmental conditions used when producing an organic thin film transistor. And is an organic compound having a fluorine atom, which is volatilizable.
有機薄膜トランジスタ絶縁層用組成物に含フッ素溶媒(B)を含有させると、有機薄膜トランジスタ絶縁層用組成物は薄膜として濡れ広がる特性が向上する。そのため、塗布法又は印刷法によって絶縁層を薄く形成可能であり、また、形成された絶縁層表面の平坦性が向上する。 When the fluorine-containing solvent (B) is contained in the organic thin film transistor insulating layer composition, the organic thin film transistor insulating layer composition is improved in the property of spreading as a thin film. Therefore, the insulating layer can be thinly formed by a coating method or a printing method, and the flatness of the formed insulating layer surface is improved.
更に、フッ素原子を有する有機化合物はフッ素原子を有しない有機物質との親和性に乏しく、有機薄膜トランジスタを構成しているフッ素原子を有する有機化合物からなる有機層の機能又はフッ素原子を有する有機化合物からなる有機層の界面に悪影響を与えない。 Furthermore, the organic compound having a fluorine atom has poor affinity with an organic substance having no fluorine atom, and the organic layer function of the organic compound having the fluorine atom constituting the organic thin film transistor or the organic compound having the fluorine atom is used. Does not adversely affect the interface of the organic layer.
含フッ素溶媒は、炭素、水素及びフッ素からなり、これら以外の原子を含まないものであることが好ましい。そのようなフッ素原子を有する有機化合物は、フッ素原子を有しない有機物質との親和性が特に乏しいからである。 The fluorine-containing solvent is preferably composed of carbon, hydrogen and fluorine and does not contain any other atoms. This is because such an organic compound having a fluorine atom has particularly poor affinity with an organic substance having no fluorine atom.
フッ素原子を有する有機化合物として、フッ素原子を有する芳香族化合物が好適に用いられる。フッ素原子を有する芳香族化合物は化合物(A)を溶解する特性が優れているからである。 As the organic compound having a fluorine atom, an aromatic compound having a fluorine atom is preferably used. This is because the aromatic compound having a fluorine atom is excellent in the property of dissolving the compound (A).
中でも好ましい含フッ素溶媒は、炭素数6〜20の芳香族フッ素化合物である。炭素数6〜20の芳香族フッ素化合物としては、ヘキサフルオロベンゼン、ペンタフルオロトルエン、オクタフルオロトルエン、テトラフルオロアニソール等が挙げられる。含フッ素溶媒(B)としては、必要に応じてレベリング剤、界面活性剤等を添加した溶媒を用いてもよい。 Among these, a preferred fluorine-containing solvent is an aromatic fluorine compound having 6 to 20 carbon atoms. Examples of the aromatic fluorine compound having 6 to 20 carbon atoms include hexafluorobenzene, pentafluorotoluene, octafluorotoluene, and tetrafluoroanisole. As a fluorine-containing solvent (B), you may use the solvent which added the leveling agent, surfactant, etc. as needed.
本発明の有機薄膜トランジスタ絶縁層用組成物において、含フッ素溶媒(B)の含有量は、環状エーテル構造を有する基を含有する化合物(A)100重量部に対して、10〜3000重量部、好ましくは15〜2000重量部である。但し、上記含フッ素溶媒(B)の含有量は、形成する有機薄膜トランジスタ絶縁層の膜厚及び有機薄膜トランジスタ絶縁層用組成物中に一緒に組み合わせて使用する樹脂の種類及び量等を考慮して適宜調節することができる。 In the composition for an organic thin film transistor insulating layer of the present invention, the content of the fluorine-containing solvent (B) is preferably 10 to 3000 parts by weight, preferably 100 parts by weight of the compound (A) containing a group having a cyclic ether structure. Is 15 to 2000 parts by weight. However, the content of the fluorine-containing solvent (B) is appropriately determined in consideration of the film thickness of the organic thin film transistor insulating layer to be formed and the type and amount of the resin used in combination in the composition for the organic thin film transistor insulating layer. Can be adjusted.
<フッ素樹脂(C)>
本発明の有機薄膜トランジスタ絶縁層用組成物は、更に、フッ素樹脂(C)を含有していてもよい。フッ素樹脂とは、フッ素原子を含む構造単位、例えば、フッ素原子を含む繰り返し単位を有する有機ポリマーをいう。
<Fluororesin (C)>
The composition for an organic thin film transistor insulating layer of the present invention may further contain a fluororesin (C). The fluororesin refers to an organic polymer having a structural unit containing a fluorine atom, for example, a repeating unit containing a fluorine atom.
有機薄膜トランジスタ絶縁層材料がフッ素原子を含む有機化合物を含むことにより、形成される絶縁層は極性が低くなり、撥水性が強化される。 When the organic thin film transistor insulating layer material contains an organic compound containing a fluorine atom, the formed insulating layer has a low polarity and water repellency is enhanced.
フッ素樹脂(C)は、ガラス表面、金属表面などの極性が高い表面の原子と結合することができる官能基を有することが好ましい。そうすれば、フッ素樹脂(C)を含んで成る絶縁層はガラス、金属などに対する密着性が向上する。 It is preferable that a fluororesin (C) has a functional group which can couple | bond with the atom of surfaces with high polarity, such as a glass surface and a metal surface. If it does so, the adhesiveness with respect to glass, a metal, etc. will improve the insulating layer containing a fluororesin (C).
<フッ素樹脂(C−1)>
好ましいフッ素樹脂(C)の一例は水酸基を含有するものであり、例えば、式(3)で表される繰り返し単位と式(4)で表される繰り返し単位とを含有するフッ素樹脂(C−1)である。
<Fluororesin (C-1)>
An example of a preferable fluororesin (C) contains a hydroxyl group. For example, a fluororesin (C-1) containing a repeating unit represented by the formula (3) and a repeating unit represented by the formula (4) ).
フッ素樹脂(C−1)に含有される繰り返し単位の構造を示す式(3)中、Xは、フッ素原子を有する炭素数1〜20の一価の有機基、フッ素原子又は塩素原子を表す。
フッ素原子を有する炭素数1〜20の一価の有機基としては、フルオロメチル基、ジフルオロメチル基、トリフルオロメチル基、フルオロエチル基、フルオロフェニル基、ペンタフルオロフェニル基等が挙げられる。
In formula (3) showing the structure of the repeating unit contained in the fluororesin (C-1), X represents a monovalent organic group having 1 to 20 carbon atoms, a fluorine atom or a chlorine atom having a fluorine atom.
Examples of the monovalent organic group having 1 to 20 carbon atoms having a fluorine atom include a fluoromethyl group, a difluoromethyl group, a trifluoromethyl group, a fluoroethyl group, a fluorophenyl group, and a pentafluorophenyl group.
式(3)で表される繰り返し単位のある一形態では、Xが塩素原子である。 In one embodiment of the repeating unit represented by the formula (3), X is a chlorine atom.
また、フッ素樹脂(C−1)に含有される繰り返し単位の構造を示す式(4)中、R9は、アルキレン基を表す。該アルキレン基中の水素原子は、フッ素原子で置換されていてもよい。アルキレン基としては、メチレン基、エチレン基、プロピレン基、ブチレン基、ヘキシレン基、オクチレン基等が挙げられる。 In the formula (4) showing the structures of repeating units contained in the fluororesin (C-1), R 9 represents an alkylene group. A hydrogen atom in the alkylene group may be substituted with a fluorine atom. Examples of the alkylene group include a methylene group, an ethylene group, a propylene group, a butylene group, a hexylene group, and an octylene group.
式(4)で表される繰り返し単位のある一形態では、R9がブチレン基である。 In one embodiment of the repeating unit represented by formula (4), R 9 is a butylene group.
本発明に用いることができるフッ素樹脂(C−1)は、例えば、式(3)で表される繰り返し単位の原料となる重合性モノマーと式(4)で表される繰り返し単位の原料となる重合性モノマーとを、光重合開始剤もしくは熱重合開始剤を用いて共重合させる方法により製造することが出来る。 The fluororesin (C-1) that can be used in the present invention is, for example, a polymerizable monomer that is a raw material of the repeating unit represented by the formula (3) and a raw material of the repeating unit that is represented by the formula (4). It can be produced by a method in which a polymerizable monomer is copolymerized using a photopolymerization initiator or a thermal polymerization initiator.
式(3)で表される繰り返し単位の原料となる重合性モノマーとしては、トリフルオロエチレン、1,1,2−トリフルオロプロピレン、クロロトリフルオロエチレン等が挙げられる。
式(4)で表される繰り返し単位の原料となる重合性モノマーとしては、2−ヒドロキシエチルビニルエーテル、4−ヒドロキシブチルビニルエーテル等が挙げられる。
Examples of the polymerizable monomer that is a raw material of the repeating unit represented by the formula (3) include trifluoroethylene, 1,1,2-trifluoropropylene, and chlorotrifluoroethylene.
Examples of the polymerizable monomer that is a raw material of the repeating unit represented by the formula (4) include 2-hydroxyethyl vinyl ether and 4-hydroxybutyl vinyl ether.
該光重合開始剤としては、例えば、アセトフェノン、2,2−ジメトキシ−2−フェニルアセトフェノン、2,2−ジエトキシアセトフェノン、4−イソプロピル−2−ヒドロキシ−2−メチルプロピオフェノン、2−ヒドロキシ−2−メチルプロピオフェノン、4,4’−ビス(ジエチルアミノ)ベンゾフェノン、ベンゾフェノン、メチル(o−ベンゾイル)ベンゾエート、1−フェニル−1,2−プロパンジオン−2−(o−エトキシカルボニル)オキシム、1−フェニル−1,2−プロパンジオン−2−(o−ベンゾイル)オキシム、ベンゾイン、ベンゾインメチルエーテル、ベンゾインエチルエーテル、ベンゾインイソプロピルエーテル、ベンゾインイソブチルエーテル、ベンゾインオクチルエーテル、ベンジル、ベンジルジメチルケタール、ベンジルジエチルケタール、ジアセチル等のカルボニル化合物、メチルアントラキノン、クロロアントラキノン等のアントラキノン誘導体、クロロチオキサントン、2−メチルチオキサントン、2−イソプロピルチオキサントン等のチオキサントン誘導体、ジフェニルジスルフィド、ジチオカーバメート等の硫黄化合物が挙げられる。 Examples of the photopolymerization initiator include acetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 4-isopropyl-2-hydroxy-2-methylpropiophenone, 2-hydroxy- 2-methylpropiophenone, 4,4′-bis (diethylamino) benzophenone, benzophenone, methyl (o-benzoyl) benzoate, 1-phenyl-1,2-propanedione-2- (o-ethoxycarbonyl) oxime, 1 -Phenyl-1,2-propanedione-2- (o-benzoyl) oxime, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin octyl ether, benzyl, benzyldimethyl Examples include carbonyl compounds such as tar, benzyldiethyl ketal and diacetyl, anthraquinone derivatives such as methylanthraquinone and chloroanthraquinone, thioxanthone derivatives such as chlorothioxanthone, 2-methylthioxanthone and 2-isopropylthioxanthone, and sulfur compounds such as diphenyl disulfide and dithiocarbamate. It is done.
該熱重合開始剤としては、ラジカル重合の開始剤となるものであればよく、例えば、2,2’−アゾビスイソブチロニトリル、2,2’−アゾビスイソバレロニトリル、2,2’−アゾビス(2,4−ジメチルバレロニトリル)、4,4’−アゾビス(4−シアノバレリックアシッド)、1、1’−アゾビス(シクロヘキサンカルボニトリル)、2,2’−アゾビス(2−メチルプロパン)、2,2’−アゾビス(2−メチルプロピオンアミジン)2塩酸塩等のアゾ系化合物、メチルエチルケトンパーオキシド、メチルイソブチルケトンパーオキシド、シクロヘキサノンパーオキシド、アセチルアセトンパーオキシド等のケトンパーオキシド類、イソブチルパーオキシド、ベンゾイルパーオキシド、2,4−ジクロロベンゾイルパーオキシド、o−メチルベンゾイルパーオキシド、ラウロイルパーオキシド、p−クロロベンゾイルパーオキシド等のジアシルパーオキシド類、2,4,4−トリメチルペンチル−2−ヒドロパーオキシド、ジイソプロピルベンゼンパーオキシド、クメンヒドロパーオキシド、tert−ブチルパーオキシド等のヒドロパーオキシド類、ジクミルパーオキシド、tert−ブチルクミルパーオキシド、ジ−tert−ブチルパーオキシド等のジアルキルパーオキシド類、トリス(tert−ブチルパーオキシ)トリアジン等のトリアルキルパーオキシド類、1,1−ジ−tert−ブチルパーオキシシクロヘキサン、2,2−ジ(tert−ブチルパーオキシ)ブタン等のパーオキシケタール類、tert−ブチルパーオキシピバレート、tert−ブチルパーオキシ−2−エチルヘキサノエート、tert−ブチルパーオキシイソブチレート、ジ−tert−ブチルパーオキシヘキサヒドロテレフタレート、ジ−tert−ブチルパーオキシアゼレート、tert−ブチルパーオキシ−3,5,5−トリメチルヘキサノエート、tert−ブチルパーオキシアセテート、tert−ブチルパーオキシベンゾエート、ジ−tert−ブチルパーオキシトリメチルアジペート等のアルキルパーエステル類、ジイソプロピルパーオキシジカーボネート、ジ−sec−ブチルパーオキシジカーボネート、tert−ブチルパーオキシイソプロピルカーボネート等のパーオキシカーボネート類が挙げられる。 The thermal polymerization initiator may be any radical polymerization initiator, such as 2,2′-azobisisobutyronitrile, 2,2′-azobisisovaleronitrile, 2,2 ′. -Azobis (2,4-dimethylvaleronitrile), 4,4'-azobis (4-cyanovaleric acid), 1,1'-azobis (cyclohexanecarbonitrile), 2,2'-azobis (2-methylpropane) ), Azo compounds such as 2,2′-azobis (2-methylpropionamidine) dihydrochloride, ketone peroxides such as methyl ethyl ketone peroxide, methyl isobutyl ketone peroxide, cyclohexanone peroxide, acetylacetone peroxide, isobutyl peroxide Oxide, benzoyl peroxide, 2,4-dichlorobenzoyl peroxide Diacyl peroxides such as o-methylbenzoyl peroxide, lauroyl peroxide, p-chlorobenzoyl peroxide, 2,4,4-trimethylpentyl-2-hydroperoxide, diisopropylbenzene peroxide, cumene hydroperoxide, tert -Hydroperoxides such as butyl peroxide, dialkyl peroxides such as dicumyl peroxide, tert-butyl cumyl peroxide, di-tert-butyl peroxide, and trialkyls such as tris (tert-butylperoxy) triazine Peroxyketals such as peroxides, 1,1-di-tert-butylperoxycyclohexane, 2,2-di (tert-butylperoxy) butane, tert-butylperoxypivalate, tert-butyl Luperoxy-2-ethylhexanoate, tert-butylperoxyisobutyrate, di-tert-butylperoxyhexahydroterephthalate, di-tert-butylperoxyazelate, tert-butylperoxy-3,5,5 Alkyl peresters such as trimethylhexanoate, tert-butyl peroxyacetate, tert-butyl peroxybenzoate, di-tert-butylperoxytrimethyladipate, diisopropyl peroxydicarbonate, di-sec-butylperoxydi Examples thereof include peroxycarbonates such as carbonate and tert-butylperoxyisopropyl carbonate.
本発明に用いることができるフッ素樹脂(C−1)は、式(3)で表される繰り返し単位の原料となる重合性モノマー及び式(4)で表される繰り返し単位の原料となる重合性モノマー以外の他の重合しうるモノマーを重合時に添加して製造してもよい。 The fluororesin (C-1) that can be used in the present invention is a polymerizable monomer that is a raw material of the repeating unit represented by the formula (3) and a polymerizability that is a raw material of the repeating unit represented by the formula (4). Other polymerizable monomers other than the monomer may be added during the polymerization.
該他の重合しうるモノマーとしては、不飽和炭化水素及びその誘導体、ビニルエーテル誘導体等が挙げられる。 Examples of the other polymerizable monomers include unsaturated hydrocarbons and derivatives thereof, and vinyl ether derivatives.
該他の重合しうるモノマーの種類は、オーバーコート絶縁層等の絶縁層に要求される特性に応じて適宜選択される。他の重合しうるモノマーの好ましい一形態としては、アルキル基等の活性水素含有基を有しないモノマーである。 The kind of the other polymerizable monomer is appropriately selected according to the characteristics required for an insulating layer such as an overcoat insulating layer. Another preferred form of the polymerizable monomer is a monomer having no active hydrogen-containing group such as an alkyl group.
不飽和炭化水素及びその誘導体としては、1−ブテン、1−ペンテン、1−ヘキセン、1−オクテン、ビニルシクロヘキサン、塩化ビニル、アリルアルコール等が挙げられる。 Examples of unsaturated hydrocarbons and derivatives thereof include 1-butene, 1-pentene, 1-hexene, 1-octene, vinylcyclohexane, vinyl chloride, and allyl alcohol.
ビニルエーテル誘導体としては、メチルビニルエーテル、エチルビニルエーテル、プロピルビニルエーテル、ブチルビニルエーテル、シクロヘキシルビニルエーテル、フェニルビニルエーテル等が挙げられる。 Examples of vinyl ether derivatives include methyl vinyl ether, ethyl vinyl ether, propyl vinyl ether, butyl vinyl ether, cyclohexyl vinyl ether, phenyl vinyl ether and the like.
これらの中では、ブチルビニルエーテル、シクロヘキシルビニルエーテルが好ましい。 Of these, butyl vinyl ether and cyclohexyl vinyl ether are preferable.
式(3)で表される繰り返し単位の原料となる重合性モノマーの使用量は、フッ素樹脂(C−1)に導入されるフッ素の量が適量になるように調節される。 The amount of the polymerizable monomer used as the raw material of the repeating unit represented by the formula (3) is adjusted so that the amount of fluorine introduced into the fluororesin (C-1) becomes an appropriate amount.
本発明に用いることができるフッ素樹脂(C−1)としては、ポリ(トリフルオロエチレン−コ−4−ヒドロキシブチルビニルエーテル−コ−エチルビニルエーテル)、ポリ(トリフルオロエチレン−コ−4−ヒドロキシブチルビニルエーテル−コ−ブチルビニルエーテル)、ポリ(トリフルオロエチレン−コ−4−ヒドロキシブチルビニルエーテル−コ−3−クロロメチルフェニルビニルエーテル)、ポリ(トリフルオロエチレン−コ−4−ヒドロキシブチルビニルエーテル−コ−ビニルシンナメート)等が挙げられる。 Examples of the fluororesin (C-1) that can be used in the present invention include poly (trifluoroethylene-co-4-hydroxybutyl vinyl ether-co-ethyl vinyl ether), poly (trifluoroethylene-co-4-hydroxybutyl vinyl ether). -Co-butyl vinyl ether), poly (trifluoroethylene-co-4-hydroxybutyl vinyl ether-co-3-chloromethylphenyl vinyl ether), poly (trifluoroethylene-co-4-hydroxybutyl vinyl ether-co-vinyl cinnamate ) And the like.
<フッ素樹脂(C−2)>
好ましいフッ素樹脂(C)の他の例は活性水素と反応する官能基を含有するものであり、例えば、式(5)で表される繰り返し単位を含有し、かつ、第1の官能基を2つ以上含有し、該第1の官能基が、電磁波もしくは熱の作用により、活性水素と反応する第2の官能基を生成する官能基であるフッ素樹脂(C−2)である。
<Fluororesin (C-2)>
Another example of a preferable fluororesin (C) contains a functional group that reacts with active hydrogen. For example, the fluororesin (C) contains a repeating unit represented by the formula (5), and the first functional group is 2 The fluororesin (C-2) is a functional group that contains two or more and the first functional group generates a second functional group that reacts with active hydrogen by the action of electromagnetic waves or heat.
フッ素樹脂(C−2)に含有される繰り返し単位の構造を示す式(5)中、R10〜R12は、それぞれ独立に、水素原子又は炭素数1〜20の一価の有機基を表す。Rは、水素原子又は炭素数1〜20の一価の有機基を表す。Rfは、フッ素原子又はフッ素原子を有する炭素数1〜20の一価の有機基を表す。Raaは、炭素数1〜20の二価の有機基を表す。該二価の有機基中の水素原子は、フッ素原子で置換されていてもよい。aは、0〜20の整数を表し、mは、1〜5の整数を表す。Raaが複数個ある場合、それらは同一でも相異なっていてもよい。Rが複数個ある場合、それらは同一でも相異なっていてもよい。Rfが複数個ある場合、それらは同一でも相異なっていてもよい。 In formula (5) showing the structure of the repeating unit contained in the fluororesin (C-2), R 10 to R 12 each independently represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms. . R represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms. Rf represents a fluorine atom or a monovalent organic group having 1 to 20 carbon atoms having a fluorine atom. Raa represents a C1-C20 divalent organic group. A hydrogen atom in the divalent organic group may be substituted with a fluorine atom. a represents an integer of 0 to 20, and m represents an integer of 1 to 5. When there are a plurality of Raa, they may be the same or different. When there are a plurality of R, they may be the same or different. When there are a plurality of Rf, they may be the same or different.
炭素数1〜20の二価の有機基は、直鎖、分岐、環状のいずれであってもよく、脂肪族炭化水素基であっても芳香族炭化水素基であってもよく、窒素原子、酸素原子、硫黄原子等のヘテロ原子を含有していてもよい。例えば、炭素数1〜20の二価の直鎖状脂肪族炭化水素基、炭素数3〜20の二価の分岐状脂肪族炭化水素基、炭素数3〜20の二価の環状脂肪族炭化水素基、アルキル基等で置換されていてもよい炭素数6〜20の二価の芳香族炭化水素基、−O−CO−、−O−、−CO−NH−、−NH−CO−NH−、−NH−CO−O−が挙げられる。これらの基は、置換基を有していてもよい。中でも、炭素数1〜6の二価の直鎖状炭化水素基、炭素数3〜6の二価の分岐状炭化水素基、炭素数3〜6の二価の環状炭化水素基、アルキル基等で置換されていてもよい炭素数6〜20の二価の芳香族炭化水素基、−O−CO−が好ましい。 The divalent organic group having 1 to 20 carbon atoms may be linear, branched or cyclic, and may be an aliphatic hydrocarbon group or an aromatic hydrocarbon group, a nitrogen atom, Hetero atoms such as oxygen atoms and sulfur atoms may be contained. For example, a C1-C20 divalent linear aliphatic hydrocarbon group, a C3-C20 divalent branched aliphatic hydrocarbon group, a C3-C20 divalent cyclic aliphatic carbonization A divalent aromatic hydrocarbon group having 6 to 20 carbon atoms which may be substituted with a hydrogen group, an alkyl group or the like, -O-CO-, -O-, -CO-NH-, -NH-CO-NH -, -NH-CO-O-. These groups may have a substituent. Among them, a divalent linear hydrocarbon group having 1 to 6 carbon atoms, a divalent branched hydrocarbon group having 3 to 6 carbon atoms, a divalent cyclic hydrocarbon group having 3 to 6 carbon atoms, an alkyl group, etc. A divalent aromatic hydrocarbon group having 6 to 20 carbon atoms which may be substituted with —O—CO— is preferable.
二価の直鎖状脂肪族炭化水素基、二価の分岐状脂肪族炭化水素基及び二価の環状脂肪族炭化水素基としては、メチレン基、エチレン基、プロピレン基、ブチレン基、ペンチレン基、ヘキシレン基、イソプロピレン基、イソブチレン基、ジメチルプロピレン基、シクロプロピレン基、シクロブチレン基、シクロペンチレン基、シクロヘキシレン基などが挙げられる。 Divalent linear aliphatic hydrocarbon group, divalent branched aliphatic hydrocarbon group and divalent cyclic aliphatic hydrocarbon group include methylene group, ethylene group, propylene group, butylene group, pentylene group, Examples include a hexylene group, an isopropylene group, an isobutylene group, a dimethylpropylene group, a cyclopropylene group, a cyclobutylene group, a cyclopentylene group, and a cyclohexylene group.
置換基を有していてもよい炭素数6〜20の二価の芳香族炭化水素基としては、フェニレン基、ナフチレン基、アンスリレン基、ジメチルフェニレン基、トリメチルフェニレン基、エチレンフェニレン基、ジエチレンフェニレン基、トリエチレンフェニレン基、プロピレンフェニレン基、ブチレンフェニレン基、メチルナフチレン基、ジメチルナフチレン基、トリメチルナフチレン基、ビニルナフチレン基、エテニルナフチレン基、メチルアンスリレン基、エチルアンスリレン基などが挙げられる。 Examples of the divalent aromatic hydrocarbon group having 6 to 20 carbon atoms which may have a substituent include a phenylene group, a naphthylene group, an anthrylene group, a dimethylphenylene group, a trimethylphenylene group, an ethylenephenylene group, and a diethylenephenylene group. , Triethylenephenylene group, propylenephenylene group, butylenephenylene group, methylnaphthylene group, dimethylnaphthylene group, trimethylnaphthylene group, vinylnaphthylene group, ethenylnaphthylene group, methylanthrylene group, ethylanthrylene group, etc. Is mentioned.
R10〜R12で表される炭素数1〜20の一価の有機基の例としては、R1で表される炭素数1〜20の一価の有機基の例と同じ基が挙げられる。Rfで表されるフッ素原子を有する炭素数1〜20の一価の有機基の例としてとしては、Xで表されるフッ素原子を有する炭素数1〜20の一価の有機基の例と同じ基が挙げられる。 Examples of the monovalent organic group having 1 to 20 carbon atoms represented by R 10 to R 12 include the same groups as those of the monovalent organic group having 1 to 20 carbon atoms represented by R 1. . Examples of the monovalent organic group having 1 to 20 carbon atoms having a fluorine atom represented by Rf are the same as those of the monovalent organic group having 1 to 20 carbon atoms having a fluorine atom represented by X. Groups.
Rで表される炭素数1〜20の一価の有機基としては、例えば、炭素数1〜20の直鎖状炭化水素基、炭素数3〜20の分岐状炭化水素基、炭素数3〜20の環状炭化水素基、炭素数6〜20の芳香族炭化水素基が挙げられ、好ましくは、炭素数1〜6の直鎖状炭化水素基、炭素数3〜6の分岐状炭化水素基、炭素数3〜6の環状炭化水素基、炭素数6〜20の芳香族炭化水素基である。 Examples of the monovalent organic group having 1 to 20 carbon atoms represented by R include, for example, a linear hydrocarbon group having 1 to 20 carbon atoms, a branched hydrocarbon group having 3 to 20 carbon atoms, and 3 to 3 carbon atoms. 20 cyclic hydrocarbon groups, and aromatic hydrocarbon groups having 6 to 20 carbon atoms, preferably linear hydrocarbon groups having 1 to 6 carbon atoms, branched hydrocarbon groups having 3 to 6 carbon atoms, It is a C3-C6 cyclic hydrocarbon group and a C6-C20 aromatic hydrocarbon group.
炭素数6〜20の芳香族炭化水素基は、基中の水素原子がアルキル基、塩素原子、臭素原子、ヨウ素原子などで置換されていてもよい。 In the aromatic hydrocarbon group having 6 to 20 carbon atoms, a hydrogen atom in the group may be substituted with an alkyl group, a chlorine atom, a bromine atom, an iodine atom, or the like.
置換基を有していてもよい炭素数1〜20の一価の有機基としては、メチル基、エチル基、プロピル基、ブチル基、ペンチル基、ヘキシル基、イソプロピル基、イソブチル基、ターシャリーブチル基、シクロプロピル基、シクロブチル基、シクロペンチル基、シクロヘキシル基、シクロペンチニル基、シクロヘキシニル基、フェニル基、ナフチル基、アンスリル基、トリル基、キシリル基、ジメチルフェニル基、トリメチルフェニル基、エチルフェニル基、ジエチルフェニル基、トリエチルフェニル基、プロピルフェニル基、ブチルフェニル基、メチルナフチル基、ジメチルナフチル基、トリメチルナフチル基、ビニルナフチル基、メチルアンスリル基、エチルアンスリル基、クロロフェニル基、ブロモフェニル基などが挙げられる。 Examples of the monovalent organic group having 1 to 20 carbon atoms which may have a substituent include methyl, ethyl, propyl, butyl, pentyl, hexyl, isopropyl, isobutyl, and tertiary butyl. Group, cyclopropyl group, cyclobutyl group, cyclopentyl group, cyclohexyl group, cyclopentynyl group, cyclohexynyl group, phenyl group, naphthyl group, anthryl group, tolyl group, xylyl group, dimethylphenyl group, trimethylphenyl group, ethylphenyl group , Diethylphenyl group, triethylphenyl group, propylphenyl group, butylphenyl group, methylnaphthyl group, dimethylnaphthyl group, trimethylnaphthyl group, vinylnaphthyl group, methylanthryl group, ethylanthryl group, chlorophenyl group, bromophenyl group, etc. Is mentioned.
式(5)で表される繰り返し単位のある一形態では、R10〜R12は、水素原子であり、Rfは、フッ素原子であり、aは、0であり、mは、5である。 In one embodiment of the repeating unit represented by the formula (5), R 10 to R 12 are hydrogen atoms, Rf is a fluorine atom, a is 0, and m is 5.
本発明に用いてもよいフッ素樹脂(C−2)は、式(5)で表される繰り返し単位を含有し、かつ、第1の官能基を2つ以上含有し、該第1の官能基が、電磁波の照射もしくは熱の作用により、活性水素と反応する第2の官能基を生成する官能基を含有する。
活性水素とは、酸素原子、窒素原子及び硫黄原子のような炭素原子以外の原子に結合した水素原子をいう。
The fluororesin (C-2) that may be used in the present invention contains the repeating unit represented by the formula (5) and contains two or more first functional groups, and the first functional group However, it contains a functional group that generates a second functional group that reacts with active hydrogen by the irradiation of electromagnetic waves or the action of heat.
Active hydrogen refers to a hydrogen atom bonded to an atom other than a carbon atom such as an oxygen atom, a nitrogen atom and a sulfur atom.
活性水素と反応する第2の官能基は、ゲート絶縁層の形成工程において熱が加えられるまで保護(ブロック)されていることが好ましい。つまり、上記第1の官能基は熱により脱保護されて、活性水素と反応する第2の官能基を生成するものであることが好ましい。
組成物の貯蔵安定性が向上するからである。
The second functional group that reacts with active hydrogen is preferably protected (blocked) until heat is applied in the step of forming the gate insulating layer. In other words, the first functional group is preferably deprotected by heat to generate a second functional group that reacts with active hydrogen.
This is because the storage stability of the composition is improved.
第1の官能基としては、ブロック化剤でブロックされたイソシアナト基又はブロック化剤でブロックされたイソチオシアナト基が挙げられる。
前記ブロック化剤でブロックされたイソシアナト基又はブロックされたイソチオシアナト基は、ブロック化剤1分子中にイソシアナト基又はイソチオシアナト基と反応しうる活性水素を1個のみ有するブロック化剤と、イソシアナト基又はイソチオシアナト基とを反応させることにより製造することができる。
Examples of the first functional group include an isocyanato group blocked with a blocking agent or an isothiocyanato group blocked with a blocking agent.
The isocyanate group blocked with the blocking agent or the blocked isothiocyanate group is a blocking agent having only one active hydrogen capable of reacting with an isocyanato group or an isothiocyanate group in one molecule of the blocking agent, an isocyanato group or an isothiocyanato group. It can be produced by reacting with a group.
前記ブロック化剤は、イソシアナト基又はイソチオシアナト基と反応した後でも、170℃以下の温度で解離するものが好ましい。ブロック化剤としては、例えば、アルコ−ル系化合物、フェノ−ル系化合物、活性メチレン系化合物、メルカプタン系化合物、酸アミド系化合物、酸イミド系化合物、イミダゾール系化合物、尿素系化合物、オキシム系化合物、アミン系化合物、イミン系化合物、重亜硫酸塩、ピリジン系化合物、ピラゾール系化合物が挙げられる。これらのブロック化剤は、単独で使用してもよく、2種以上を混合して使用してもよい。好ましいブロック化剤としては、オキシム系化合物、ピラゾール系化合物が挙げられる。 The blocking agent preferably dissociates at a temperature of 170 ° C. or lower even after reacting with an isocyanato group or an isothiocyanato group. Examples of the blocking agent include alcohol compounds, phenol compounds, active methylene compounds, mercaptan compounds, acid amide compounds, acid imide compounds, imidazole compounds, urea compounds, and oxime compounds. , Amine compounds, imine compounds, bisulfites, pyridine compounds, and pyrazole compounds. These blocking agents may be used alone or in combination of two or more. Preferable blocking agents include oxime compounds and pyrazole compounds.
以下に、具体的なブロック化剤を例示する。アルコ−ル系化合物としては、メタノール、エタノール、プロパノール、ブタノール、2−エチルヘキサノール、メチルセロソルブ、ブチルセロソルブ、メチルカルビトール、ベンジルアルコール、シクロヘキサノール等が挙げられる。フェノール系化合物としては、フェノール、クレゾール、エチルフェノール、ブチルフェノール、ノニルフェノール、ジノニルフェノール、スチレン化フェノール、ヒドロキシ安息香酸エステル等が挙げられる。活性メチレン系化合物としては、マロン酸ジメチル、マロン酸ジエチル、アセト酢酸メチル、アセト酢酸エチル、アセチルアセトン等が挙げられる。メルカプタン系化合物としては、ブチルメルカプタン、ドデシルメルカプタン等が挙げられる。酸アミド系化合物としては、アセトアニリド、酢酸アミド、ε−カプロラクタム、δ−バレロラクタム、γ−ブチロラクタム等、酸イミド系化合物としては、コハク酸イミド、マレイン酸イミド等が挙げられる。イミダゾール系化合物としては、イミダゾール、2−メチルイミダゾール等が挙げられる。尿素系化合物としては、尿素、チオ尿素、エチレン尿素等が挙げられる。オキシム系化合物としては、ホルムアルドオキシム、アセトアルドオキシム、アセトオキシム、メチルエチルケトオキシム、シクロヘキサノンオキシム等が挙げられる。アミン系化合物としては、ジフェニルアミン、アニリン、カルバゾール等が挙げられる。イミン系化合物としては、エチレンイミン、ポリエチレンイミン等が挙げられる。重亜硫酸塩としては、重亜硫酸ソーダ等が挙げられる。ピリジン系化合物としては、2−ヒドロキシピリジン、2−ヒドロキシキノリン等が挙げられる。ピラゾール系化合物としては、3,5−ジメチルピラゾール、3,5−ジエチルピラゾール等が挙げられる。 Specific blocking agents are exemplified below. Examples of the alcohol compounds include methanol, ethanol, propanol, butanol, 2-ethylhexanol, methyl cellosolve, butyl cellosolve, methyl carbitol, benzyl alcohol, cyclohexanol and the like. Examples of phenolic compounds include phenol, cresol, ethylphenol, butylphenol, nonylphenol, dinonylphenol, styrenated phenol, hydroxybenzoic acid ester, and the like. Examples of the active methylene compound include dimethyl malonate, diethyl malonate, methyl acetoacetate, ethyl acetoacetate, and acetylacetone. Examples of mercaptan compounds include butyl mercaptan and dodecyl mercaptan. Examples of acid amide compounds include acetanilide, acetic acid amide, ε-caprolactam, δ-valerolactam, and γ-butyrolactam. Examples of acid imide compounds include succinimide and maleic imide. Examples of the imidazole compound include imidazole and 2-methylimidazole. Examples of urea compounds include urea, thiourea, and ethylene urea. Examples of oxime compounds include formal oxime, acetal oxime, acetoxime, methyl ethyl ketoxime, cyclohexanone oxime, and the like. Examples of the amine compound include diphenylamine, aniline, carbazole and the like. Examples of the imine compound include ethyleneimine and polyethyleneimine. Examples of the bisulfite include sodium bisulfite. Examples of pyridine-based compounds include 2-hydroxypyridine and 2-hydroxyquinoline. Examples of the pyrazole compound include 3,5-dimethylpyrazole, 3,5-diethylpyrazole and the like.
本発明に用いてもよいブロック化剤でブロックされたイソシアナト基は、式(6)で表される基であってXaが酸素原子である基、式(7)で表される基であってXbが酸素原子である基が好ましい。本発明に用いてもよいブロック化剤でブロックされたイソチアシアナト基は、式(6)で表される基であってXaが硫黄原子である基、式(7)で表される基であってXbが硫黄原子である基が好ましい。 The isocyanato group blocked with a blocking agent that may be used in the present invention is a group represented by the formula (6), a group in which Xa is an oxygen atom, a group represented by the formula (7), A group in which Xb is an oxygen atom is preferable. The isothiocyanato group blocked with a blocking agent that may be used in the present invention is a group represented by the formula (6), wherein Xa is a sulfur atom, or a group represented by the formula (7). A group in which Xb is a sulfur atom is preferred.
式(6)中、Xaは、酸素原子又は硫黄原子を表し、R13及びR14は、それぞれ独立に、水素原子又は炭素数1〜20の一価の有機基を表す。R13及びR14で表される炭素数1〜20の一価の有機基の例としては、R10〜R12で表される一価の有機基の例と同じ基が挙げられる。
式(6)で表される繰り返し単位のある一形態では、Xaは、酸素原子であり、R13は、メチル基であり、R14は、エチル基である。
In Formula (6), Xa represents an oxygen atom or a sulfur atom, and R 13 and R 14 each independently represent a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms. Examples of the monovalent organic group having 1 to 20 carbon atoms represented by R 13 and R 14 include the same groups as the examples of the monovalent organic group represented by R 10 to R 12 .
In one embodiment of the repeating unit represented by the formula (6), Xa is an oxygen atom, R 13 is a methyl group, and R 14 is an ethyl group.
式(7)中、Xbは、酸素原子又は硫黄原子を表し、R15、R16及びR17は、それぞれ独立に、水素原子又は炭素数1〜20の一価の有機基を表す。
R15、R16及びR17で表される炭素数1〜20の一価の有機基の例としては、R10〜R12で表される一価の有機基の例と同じ基が挙げられる。
式(7)で表される繰り返し単位のある一形態では、Xbは、酸素原子であり、R15〜R17は、水素原子である。
In Formula (7), Xb represents an oxygen atom or a sulfur atom, and R 15 , R 16 and R 17 each independently represent a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms.
Examples of the monovalent organic group having 1 to 20 carbon atoms represented by R 15 , R 16 and R 17 include the same groups as those of the monovalent organic group represented by R 10 to R 12. .
In one embodiment of the repeating unit represented by the formula (7), Xb is an oxygen atom, and R 15 to R 17 are hydrogen atoms.
ブロック化剤でブロックされたイソシアナト基としては、例えば、O−(メチリデンアミノ)カルボキシアミノ基、O−(1−エチリデンアミノ)カルボキシアミノ基、O−(1−メチルエチリデンアミノ)カルボキシアミノ基、O−[1−メチルプロピリデンアミノ]カルボキシアミノ基、(N−3,5−ジメチルピラゾリルカルボニル)アミノ基、(N−3−エチル−5−メチルピラゾリルカルボニル)アミノ基、(N−3,5−ジエチルピラゾリルカルボニル)アミノ基、(N−3−プロピル−5−メチルピラゾリルカルボニル)アミノ基、(N−3−エチル−5−プロピルピラゾリルカルボニル)アミノ基が挙げられる。 Examples of the isocyanato group blocked with a blocking agent include O- (methylideneamino) carboxyamino group, O- (1-ethylideneamino) carboxyamino group, O- (1-methylethylideneamino) carboxyamino group, O- [1-methylpropylideneamino] carboxyamino group, (N-3,5-dimethylpyrazolylcarbonyl) amino group, (N-3-ethyl-5-methylpyrazolylcarbonyl) amino group, (N-3,5-diethyl) And pyrazolylcarbonyl) amino group, (N-3-propyl-5-methylpyrazolylcarbonyl) amino group, and (N-3-ethyl-5-propylpyrazolylcarbonyl) amino group.
ブロック化剤でブロックされたイソチオシアナト基としては、例えば、O−(メチリデンアミノ)チオカルボキシアミノ基、O−(1−エチリデンアミノ)チオカルボキシアミノ基、O−(1−メチルエチリデンアミノ)チオカルボキシアミノ基、O−[1−メチルプロピリデンアミノ] チオカルボキシアミノ基、(N−3,5−ジメチルピラゾリルチオカルボニル)アミノ基、(N−3−エチル−5−メチルピラゾリルチオカルボニル)アミノ基、(N−3,5−ジエチルピラゾリルチオカルボニル)アミノ基、(N−3−プロピル−5−メチルピラゾリルチオカルボニル)アミノ基、(N−3−エチル−5−プロピルピラゾリルチオカルボニル)アミノ基が挙げられる。
本発明に用いられる、第1の官能基としては、ブロック化剤でブロックされたイソシアナト基が好ましい。
Examples of the isothiocyanato group blocked with a blocking agent include an O- (methylideneamino) thiocarboxyamino group, an O- (1-ethylideneamino) thiocarboxyamino group, and an O- (1-methylethylideneamino) thiocarboxyamino group. , O- [1-methylpropylideneamino] thiocarboxyamino group, (N-3,5-dimethylpyrazolylthiocarbonyl) amino group, (N-3-ethyl-5-methylpyrazolylthiocarbonyl) amino group, (N -3,5-diethylpyrazolylthiocarbonyl) amino group, (N-3-propyl-5-methylpyrazolylthiocarbonyl) amino group, (N-3-ethyl-5-propylpyrazolylthiocarbonyl) amino group.
The first functional group used in the present invention is preferably an isocyanato group blocked with a blocking agent.
次に、本発明に用いられるフッ素樹脂(C−2)の製造方法について説明する。フッ素樹脂(C−2)は、例えば、式(5)で表される繰り返し単位の原料となる重合性モノマーと、第1の官能基を含有する重合性モノマーとを、光重合開始剤もしくは熱重合開始剤を用いて共重合させる方法により製造することが出来る。
光重合開始剤及び熱重合開始剤としては、前述のフッ素樹脂(C−1)の製造に使用され得るのと同じ光重合開始剤及び熱重合開始剤が挙げられる。
Next, the manufacturing method of the fluororesin (C-2) used for this invention is demonstrated. The fluororesin (C-2) is obtained by, for example, converting a polymerizable monomer that is a raw material of the repeating unit represented by the formula (5) and a polymerizable monomer containing the first functional group into a photopolymerization initiator or heat. It can manufacture by the method of copolymerizing using a polymerization initiator.
Examples of the photopolymerization initiator and the thermal polymerization initiator include the same photopolymerization initiator and thermal polymerization initiator that can be used in the production of the fluororesin (C-1).
式(5)で表される繰り返し単位の原料となる重合性モノマーとしては、2−トリフルオロメチルスチレン、3−トリフルオロメチルスチレン、4−トリフルオロメチルスチレン、2,3,4,5,6−ペンタフルオロスチレン、4−フルオロメチルスチレン等が挙げられる。 Examples of the polymerizable monomer that is a raw material of the repeating unit represented by the formula (5) include 2-trifluoromethylstyrene, 3-trifluoromethylstyrene, 4-trifluoromethylstyrene, 2,3,4,5,6. -Pentafluorostyrene, 4-fluoromethylstyrene, etc. are mentioned.
第1の官能基を含有する重合性モノマーとしては、ブロック化剤でブロックされたイソシアナト基又はブロック化剤でブロックされたイソチオシアナト基と不飽和結合とを有するモノマーが挙げられる。該ブロック化剤でブロックされたイソシアナト基又はブロック化剤でブロックされたイソチオシアナト基と不飽和結合とを有するモノマーは、イソシアナト基又はイソチオシアナト基と不飽和結合とを有する化合物と、ブロック化剤とを反応させることにより製造することが出来る。不飽和結合としては、不飽和二重結合が好ましい。 Examples of the polymerizable monomer containing the first functional group include an isocyanato group blocked with a blocking agent or a monomer having an isothiocyanate group blocked with a blocking agent and an unsaturated bond. A monomer having an isocyanato group blocked with the blocking agent or an isothiocyanate group blocked with a blocking agent and an unsaturated bond includes an isocyanate group or a compound having an isothiocyanato group and an unsaturated bond, and a blocking agent. It can be produced by reacting. As the unsaturated bond, an unsaturated double bond is preferable.
不飽和二重結合とイソシアナト基とを有する化合物としては、2−アクリロイルオキシエチルイソシアネート、2−メタクリロイルオキシエチルイソシアネート、2−(2’−メタクリロイルオキシエチル)オキシエチルイソシアネート等が挙げられる。不飽和二重結合とイソチオシアナト基とを有する化合物としては、2−アクリロイルオキシエチルイソチオシアネート、2−メタクリロイルオキシエチルイソチオシアネート、2−(2’−メタクリロイルオキシエチル)オキシエチルイソチオシアネート等が挙げられる。 Examples of the compound having an unsaturated double bond and an isocyanato group include 2-acryloyloxyethyl isocyanate, 2-methacryloyloxyethyl isocyanate, 2- (2'-methacryloyloxyethyl) oxyethyl isocyanate, and the like. Examples of the compound having an unsaturated double bond and an isothiocyanato group include 2-acryloyloxyethyl isothiocyanate, 2-methacryloyloxyethyl isothiocyanate, 2- (2'-methacryloyloxyethyl) oxyethyl isothiocyanate, and the like.
ブロック化剤としては、前記のブロック化剤を好適に用いることができる。ブロック化剤でブロックされたイソシアナト基又はブロック化剤でブロックされたイソチオシアナト基と不飽和結合とを有するモノマーの製造においては、必要に応じて有機溶媒、触媒等を添加してもよい。 As the blocking agent, the above blocking agents can be preferably used. In the production of a monomer having an isocyanato group blocked with a blocking agent or an isothiocyanato group blocked with a blocking agent and an unsaturated bond, an organic solvent, a catalyst, or the like may be added as necessary.
前記不飽和二重結合とブロック化剤でブロックされたイソシアナト基を有するモノマーとしては、2−〔O−[1’−メチルプロピリデンアミノ]カルボキシアミノ〕エチル−メタクリレート、2−〔N−[1’,3’−ジメチルピラゾリル]カルボキシアミノ〕エチル−メタクリレート、2−〔O−[1’−メチルプロピリデンアミノ]チオカルボキシアミノ〕エチル−メタクリレート、2−〔N−[1’,3’−ジメチルピラゾリル]チオカルボキシアミノ〕エチル−メタクリレート等が挙げられる。 As the monomer having an unsaturated double bond and an isocyanate group blocked with a blocking agent, 2- [O- [1′-methylpropylideneamino] carboxyamino] ethyl-methacrylate, 2- [N- [1 ', 3'-dimethylpyrazolyl] carboxyamino] ethyl-methacrylate, 2- [O- [1'-methylpropylideneamino] thiocarboxyamino] ethyl-methacrylate, 2- [N- [1', 3'-dimethyl] Pyrazolyl] thiocarboxyamino] ethyl-methacrylate and the like.
本発明に用いることができるフッ素樹脂(C−2)は、式(5)で表される繰り返し単位の原料となる重合性モノマー、第1の官能基を含有する重合性モノマー以外の他の重合しうるモノマーを重合時に添加して製造してもよい。 The fluororesin (C-2) that can be used in the present invention is a polymerization monomer other than the polymerizable monomer that is a raw material of the repeating unit represented by the formula (5) and the polymerizable monomer containing the first functional group. A monomer capable of being added may be added during the polymerization.
該他の重合しうるモノマーとしては、例えば、アクリル酸エステル及びその誘導体、メタアクリル酸エステル及びその誘導体、スチレン及びその誘導体、酢酸ビニル及びその誘導体、メタアクリロニトリル及びその誘導体、アクリロニトリル及びその誘導体、有機カルボン酸のビニルエステル及びその誘導体、有機カルボン酸のアリルエステル及びその誘導体、フマル酸のジアルキルエステル及びその誘導体、マレイン酸のジアルキルエステル及びその誘導体、イタコン酸のジアルキルエステル及びその誘導体、有機カルボン酸のN−ビニルアミド誘導体、マレイミド及びその誘導体、末端不飽和炭化水素及びその誘導体等、不飽和結合含有有機ゲルマニウム化合物が挙げられる。 Examples of the other polymerizable monomers include acrylic acid esters and derivatives thereof, methacrylic acid esters and derivatives thereof, styrene and derivatives thereof, vinyl acetate and derivatives thereof, methacrylonitrile and derivatives thereof, acrylonitrile and derivatives thereof, organic Vinyl esters of carboxylic acids and derivatives thereof, allyl esters of organic carboxylic acids and derivatives thereof, dialkyl esters of fumaric acid and derivatives thereof, dialkyl esters of maleic acid and derivatives thereof, dialkyl esters of itaconic acid and derivatives thereof, organic carboxylic acids Examples include N-vinylamide derivatives, maleimides and derivatives thereof, terminal unsaturated hydrocarbons and derivatives thereof, and unsaturated bond-containing organic germanium compounds.
該他の重合しうるモノマーの種類は、絶縁層に要求される特性に応じて適宜選択される。優れた耐久性や有機薄膜トランジスタのヒステリシスを小さくする観点からは、スチレンやスチレン誘導体のように分子密度が高く、硬い膜を形成するモノマーが選択される。
また、ゲート電極や基板の表面等の絶縁層の隣接面に対する密着性の観点からは、メタアクリル酸エステル及びその誘導体、アクリル酸エステル及びその誘導体のように、柔軟性を付与するモノマーが選択される。好ましい一形態では、メチル基、エチル基等のアルキル基のような活性水素含有基を有しないモノマーが選択される。
The kind of the other polymerizable monomer is appropriately selected according to the characteristics required for the insulating layer. From the viewpoint of excellent durability and low hysteresis of the organic thin film transistor, a monomer that has a high molecular density and forms a hard film such as styrene or a styrene derivative is selected.
In addition, from the viewpoint of adhesion to the adjacent surface of the insulating layer such as the gate electrode or the surface of the substrate, monomers that impart flexibility such as methacrylic acid esters and derivatives thereof, acrylic acid esters and derivatives thereof are selected. The In a preferred embodiment, a monomer that does not have an active hydrogen-containing group such as an alkyl group such as a methyl group or an ethyl group is selected.
例えば、式(5)で表される繰り返し単位の原料となる重合性モノマーと活性水素含有基を有しないスチレン又はスチレン誘導体を組み合わせて重合したフッ素樹脂を有機薄膜トランジスタ絶縁層用組成物に用いることにより、特に耐久性が高く、ヒステリシスが小さいゲート絶縁層が得られる。 For example, by using a fluororesin polymerized by combining a polymerizable monomer as a raw material of the repeating unit represented by the formula (5) and styrene or a styrene derivative having no active hydrogen-containing group in the composition for an organic thin film transistor insulating layer. In particular, a gate insulating layer having high durability and low hysteresis can be obtained.
アクリル酸エステル類及びその誘導体としては、単官能のアクリレートや、使用量に制約は出てくるが多官能のアクリレートをも使用することができ、例えば、アクリル酸メチル、アクリル酸エチル、アクリル酸−n−プロピル、アクリル酸イソプロピル、アクリル酸−n−ブチル、アクリル酸イソブチル、アクリル酸−sec−ブチル、アクリル酸ヘキシル、アクリル酸オクチル、アクリル酸−2−エチルヘキシル、アクリル酸デシル、アクリル酸イソボルニル、アクリル酸シクロヘキシル、アクリル酸フェニル、アクリル酸ベンジル、アクリル酸−2−ヒドロキシエチル、アクリル酸−2−ヒドロキシプロピル、アクリル酸−3−ヒドロキシプロピル、アクリル酸−2−ヒドロキシブチル、アクリル酸−2−ヒドロキシフェニルエチル、エチレングリコールジアクリレート、プロピレングリコールジアクリレート、1,4−ブタンジオールジアクリレート、ジエチレングリコールジアクリレート、トリエチレングリコールジアクリレート、トリメチロールプロパンジアクリレート、トリメチロールプロパントリアクリレート、ペンタエリスリトールペンタアクリレート、N,N−ジメチルアクリルアミド、N,N−ジエチルアクリルアミド、N−アクリロイルモルフォリン、2,2,2−トリフルオロエチルアクリレート、2,2,3,3,3−ペンタフルオロプロピルアクリレート、2−(パーフルオロブチル)エチルアクリレート、3−パーフルオロブチル−2−ヒドロキシプロピルアクリレート、2−(パーフルオロヘキシル)エチルアクリレート、3−パーフルオロヘキシル−2−ヒドロキシプロピルアクリレート、2−(パーフルオロオクチル)エチルアクリレート、3−パーフルオロオクチル−2−ヒドロキシプロピルアクリレート、2−(パーフルオロデシル)エチルアクリレート、2−(パーフルオロ−3−メチルブチル)エチルアクリレート、3−(パーフルオロ−3−メチルブチル)−2−ヒドロキシプロピルアクリレート、2−(パーフルオロ−5−メチルヘキシル)エチルアクリレート、2−(パーフルオロ−3−メチルブチル)−2−ヒドロキシプロピルアクリレート、3−(パーフルオロ−5−メチルヘキシル)−2−ヒドロキシプロピルアクリレート、2−(パーフルオロ−7−メチルオクチル)エチルアクリレート、3−(パーフルオロ−7−メチルオクチル)−2−ヒドロキシプロピルアクリレート、1H,1H,3H−テトラフルオロプロピルアクリレート、1H,1H,5H−オクタフルオロペンチルアクリレート、1H,1H,7H−ドデカフルオロヘプチルアクリレート、1H,1H,9H−ヘキサデカフルオロノニルアクリレート、1H−1−(トリフルオロメチル)トリフルオロエチルアクリレート、1H,1H,3H−ヘキサフルオロブチルアクリレート等が挙げられる。 As the acrylates and derivatives thereof, monofunctional acrylates and polyfunctional acrylates can be used although there are restrictions on the amount used. For example, methyl acrylate, ethyl acrylate, acrylic acid- n-propyl, isopropyl acrylate, acrylate-n-butyl, isobutyl acrylate, acrylate-sec-butyl, hexyl acrylate, octyl acrylate, 2-ethylhexyl acrylate, decyl acrylate, isobornyl acrylate, acrylic Cyclohexyl acid, phenyl acrylate, benzyl acrylate, 2-hydroxyethyl acrylate, 2-hydroxypropyl acrylate, 3-hydroxypropyl acrylate, 2-hydroxybutyl acrylate, 2-hydroxyphenyl acrylate ethyl, Tylene glycol diacrylate, propylene glycol diacrylate, 1,4-butanediol diacrylate, diethylene glycol diacrylate, triethylene glycol diacrylate, trimethylolpropane diacrylate, trimethylolpropane triacrylate, pentaerythritol pentaacrylate, N, N- Dimethylacrylamide, N, N-diethylacrylamide, N-acryloylmorpholine, 2,2,2-trifluoroethyl acrylate, 2,2,3,3,3-pentafluoropropyl acrylate, 2- (perfluorobutyl) ethyl Acrylate, 3-perfluorobutyl-2-hydroxypropyl acrylate, 2- (perfluorohexyl) ethyl acrylate, 3-perfluorohe Sil-2-hydroxypropyl acrylate, 2- (perfluorooctyl) ethyl acrylate, 3-perfluorooctyl-2-hydroxypropyl acrylate, 2- (perfluorodecyl) ethyl acrylate, 2- (perfluoro-3-methylbutyl) Ethyl acrylate, 3- (perfluoro-3-methylbutyl) -2-hydroxypropyl acrylate, 2- (perfluoro-5-methylhexyl) ethyl acrylate, 2- (perfluoro-3-methylbutyl) -2-hydroxypropyl acrylate 3- (perfluoro-5-methylhexyl) -2-hydroxypropyl acrylate, 2- (perfluoro-7-methyloctyl) ethyl acrylate, 3- (perfluoro-7-methyloctyl) -2-hydroxypro Pyracrylate, 1H, 1H, 3H-tetrafluoropropyl acrylate, 1H, 1H, 5H-octafluoropentyl acrylate, 1H, 1H, 7H-dodecafluoroheptyl acrylate, 1H, 1H, 9H-hexadecafluorononyl acrylate, 1H- Examples thereof include 1- (trifluoromethyl) trifluoroethyl acrylate, 1H, 1H, 3H-hexafluorobutyl acrylate and the like.
メタアクリル酸エステル類及びその誘導体としては、単官能のメタアクリレートや、使用量に制約は出てくるが多官能のメタアクリレートをも使用することができ、例えば、メタアクリル酸メチル、メタアクリル酸エチル、メタアクリル酸−n−プロピル、メタアクリル酸イソプロピル、メタアクリル酸−n−ブチル、メタアクリル酸イソブチル、メタアクリル酸−sec−ブチル、メタアクリル酸ヘキシル、メタアクリル酸オクチル、メタアクリル酸−2−エチルヘキシル、メタアクリル酸デシル、メタアクリル酸イソボルニル、メタアクリル酸シクロヘキシル、メタアクリル酸フェニル、メタアクリル酸ベンジル、メタアクリル酸−2−ヒドロキシエチル、メタアクリル酸−2−ヒドロキシプロピル、メタアクリル酸−3−ヒドロキシプロピル、メタアクリル酸−2−ヒドロキシブチル、メタアクリル酸−2−ヒドロキシフェニルエチル、エチレングリコールジメタアクリレート、プロピレングリコールジメタアクリレート、1,4−ブタンジオールジメタアクリレート、ジエチレングリコールジメタアクリレート、トリエチレングリコールジメタアクリレート、トリメチロールプロパンジメタアクリレート、トリメチロールプロパントリメタアクリレート、ペンタエリスリトールペンタメタアクリレート、N,N−ジメチルメタアクリルアミド、N,N−ジエチルメタアクリルアミド、N−アクリロイルモルフォリン、2,2,2−トリフルオロエチルメタアクリレート、2,2,3,3,3−ペンタフルオロプロピルメタアクリレート、2−(パーフルオロブチル)エチルメタアクリレート、3−パーフルオロブチル−2−ヒドロキシプロピルメタアクリレート、2−(パーフルオロヘキシル)エチルメタアクリレート、3−パーフルオロヘキシル−2−ヒドロキシプロピルメタアクリレート、2−(パーフルオロオクチル)エチルメタアクリレート、3−パーフルオロオクチル−2−ヒドロキシプロピルメタアクリレート、2−(パーフルオロデシル)エチルメタアクリレート、2−(パーフルオロ−3−メチルブチル)エチルメタアクリレート、3−(パーフルオロ−3−メチルブチル)−2−ヒドロキシプロピルメタアクリレート、2−(パーフルオロ−5−メチルヘキシル)エチルメタアクリレート、2−(パーフルオロ−3−メチルブチル)−2−ヒドロキシプロピルメタアクリレート、3−(パーフルオロ−5−メチルヘキシル)−2−ヒドロキシプロピルメタアクリレート、2−(パーフルオロ−7−メチルオクチル)エチルメタアクリレート、3−(パーフルオロ−7−メチルオクチル)−2−ヒドロキシプロピルメタアクリレート、1H,1H,3H−テトラフルオロプロピルメタアクリレート、1H,1H,5H−オクタフルオロペンチルメタアクリレート、1H,1H,7H−ドデカフルオロヘプチルメタアクリレート、1H,1H,9H−ヘキサデカフルオロノニルメタアクリレート、1H−1−(トリフルオロメチル)トリフルオロエチルメタアクリレート、1H,1H,3H−ヘキサフルオロブチルメタアクリレート等を挙げることができる。 As the methacrylic acid esters and derivatives thereof, monofunctional methacrylates and polyfunctional methacrylates can be used although there are restrictions on the amount used, for example, methyl methacrylate, methacrylic acid Ethyl, methacrylate-n-propyl, isopropyl methacrylate, methacrylate-n-butyl, isobutyl methacrylate, methacrylate-sec-butyl, hexyl methacrylate, octyl methacrylate, methacrylate- 2-ethylhexyl, decyl methacrylate, isobornyl methacrylate, cyclohexyl methacrylate, phenyl methacrylate, benzyl methacrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl methacrylate, methacrylic acid -3-hydroxy group Pill, 2-hydroxybutyl methacrylate, 2-hydroxyphenylethyl methacrylate, ethylene glycol dimethacrylate, propylene glycol dimethacrylate, 1,4-butanediol dimethacrylate, diethylene glycol dimethacrylate, triethylene Glycol dimethacrylate, trimethylolpropane dimethacrylate, trimethylolpropane trimethacrylate, pentaerythritol pentamethacrylate, N, N-dimethylmethacrylamide, N, N-diethylmethacrylamide, N-acryloylmorpholine, 2,2 , 2-trifluoroethyl methacrylate, 2,2,3,3,3-pentafluoropropyl methacrylate, 2- (perfluorobutyl) ethyl Acrylate, 3-perfluorobutyl-2-hydroxypropyl methacrylate, 2- (perfluorohexyl) ethyl methacrylate, 3-perfluorohexyl-2-hydroxypropyl methacrylate, 2- (perfluorooctyl) ethyl methacrylate , 3-perfluorooctyl-2-hydroxypropyl methacrylate, 2- (perfluorodecyl) ethyl methacrylate, 2- (perfluoro-3-methylbutyl) ethyl methacrylate, 3- (perfluoro-3-methylbutyl)- 2-hydroxypropyl methacrylate, 2- (perfluoro-5-methylhexyl) ethyl methacrylate, 2- (perfluoro-3-methylbutyl) -2-hydroxypropyl methacrylate, 3- (perful Oro-5-methylhexyl) -2-hydroxypropyl methacrylate, 2- (perfluoro-7-methyloctyl) ethyl methacrylate, 3- (perfluoro-7-methyloctyl) -2-hydroxypropyl methacrylate, 1H , 1H, 3H-tetrafluoropropyl methacrylate, 1H, 1H, 5H-octafluoropentyl methacrylate, 1H, 1H, 7H-dodecafluoroheptyl methacrylate, 1H, 1H, 9H-hexadecafluorononyl methacrylate, 1H- Examples thereof include 1- (trifluoromethyl) trifluoroethyl methacrylate, 1H, 1H, 3H-hexafluorobutyl methacrylate, and the like.
スチレン及びその誘導体としては、スチレン、o−メチルスチレン、m−メチルスチレン、p−メチルスチレン、2,4−ジメチルスチレン、2,5−ジメチルスチレン、2,6−ジメチルスチレン、3,4−ジメチルスチレン、3,5−ジメチルスチレン、2,4,6−トリメチルスチレン、2,4,5−トリメチルスチレン、ペンタメチルスチレン、o−エチルスチレン、m−エチルスチレン、p−エチルスチレン、o−クロロスチレン、m−クロロスチレン、p−クロロスチレン、o−ブロモスチレン、m−ブロモスチレン、p−ブロモスチレン、o−メトキシスチレン、m−メトキシスチレン、p−メトキシスチレン、o−ヒドロキシスチレン、m−ヒドロキシスチレン、p−ヒドロキシスチレン、2−ビニルビフェニル、3−ビニルビフェニル、4−ビニルビフェニル、1−ビニルナフタレン、2−ビニルナフタレン、4−ビニル−p−ターフェニル、1−ビニルアントラセン、α−メチルスチレン、o−イソプロペニルトルエン、m−イソプロペニルトルエン、p−イソプロペニルトルエン、2,4−ジメチル−α−メチルスチレン、2,3−ジメチル−α−メチルスチレン、3,5−ジメチル−α−メチルスチレン、p−イソプロピル−α−メチルスチレン、α−エチルスチレン、α−クロロスチレン、ジビニルベンゼン、ジビニルビフェニル、ジイソプロピルベンゼン、4−アミノスチレン等が挙げられる。 Examples of styrene and derivatives thereof include styrene, o-methylstyrene, m-methylstyrene, p-methylstyrene, 2,4-dimethylstyrene, 2,5-dimethylstyrene, 2,6-dimethylstyrene, and 3,4-dimethyl. Styrene, 3,5-dimethylstyrene, 2,4,6-trimethylstyrene, 2,4,5-trimethylstyrene, pentamethylstyrene, o-ethylstyrene, m-ethylstyrene, p-ethylstyrene, o-chlorostyrene , M-chlorostyrene, p-chlorostyrene, o-bromostyrene, m-bromostyrene, p-bromostyrene, o-methoxystyrene, m-methoxystyrene, p-methoxystyrene, o-hydroxystyrene, m-hydroxystyrene , P-hydroxystyrene, 2-vinylbiphenyl, 3-vinyl Biphenyl, 4-vinylbiphenyl, 1-vinylnaphthalene, 2-vinylnaphthalene, 4-vinyl-p-terphenyl, 1-vinylanthracene, α-methylstyrene, o-isopropenyltoluene, m-isopropenyltoluene, p- Isopropenyltoluene, 2,4-dimethyl-α-methylstyrene, 2,3-dimethyl-α-methylstyrene, 3,5-dimethyl-α-methylstyrene, p-isopropyl-α-methylstyrene, α-ethylstyrene , Α-chlorostyrene, divinylbenzene, divinylbiphenyl, diisopropylbenzene, 4-aminostyrene and the like.
アクリルニトリル及びその誘導体としては、アクリロニトリル等が挙げられる。メタアクリルニトリル及びその誘導体としては、メタクリロニトリル等が挙げられる。 Examples of acrylonitrile and its derivatives include acrylonitrile. Examples of methacrylonitrile and derivatives thereof include methacrylonitrile.
有機カルボン酸のビニルエステル及びその誘導体としては、酢酸ビニル、プロピオン酸ビニル、酪酸ビニル、安息香酸ビニル、アジピン酸ジビニル等が挙げられる。 Examples of vinyl esters of organic carboxylic acids and derivatives thereof include vinyl acetate, vinyl propionate, vinyl butyrate, vinyl benzoate, and divinyl adipate.
有機カルボン酸のアリルエステル及びその誘導体としては、酢酸アリル、安息香酸アリル、アジピン酸ジアリル、テレフタル酸ジアリル、イソフタル酸ジアリル、フタル酸ジアリル等が挙げられる。 Examples of allyl esters of organic carboxylic acids and derivatives thereof include allyl acetate, allyl benzoate, diallyl adipate, diallyl terephthalate, diallyl isophthalate, and diallyl phthalate.
フマル酸のジアルキルエステル及びその誘導体としては、フマル酸ジメチル、フマル酸ジエチル、フマル酸ジイソプロピル、フマル酸ジ−sec−ブチル、フマル酸ジイソブチル、フマル酸ジ−n−ブチル、フマル酸ジ−2−エチルヘキシル、フマル酸ジベンジル等が挙げられる。 Dialkyl esters of fumaric acid and derivatives thereof include dimethyl fumarate, diethyl fumarate, diisopropyl fumarate, di-sec-butyl fumarate, diisobutyl fumarate, di-n-butyl fumarate, di-2-ethylhexyl fumarate And dibenzyl fumarate.
マレイン酸のジアルキルエステル及びその誘導体としては、マレイン酸ジメチル、マレイン酸ジエチル、マレイン酸ジイソプロピル、マレイン酸ジ−sec−ブチル、マレイン酸ジイソブチル、マレイン酸ジ−n−ブチル、マレイン酸ジ−2−エチルヘキシル、マレイン酸ジベンジル等が挙げられる。 Dialkyl esters of maleic acid and derivatives thereof include dimethyl maleate, diethyl maleate, diisopropyl maleate, di-sec-butyl maleate, diisobutyl maleate, di-n-butyl maleate, di-2-ethylhexyl maleate And dibenzyl maleate.
イタコン酸のジアルキルエステル及びその誘導体としては、イタコン酸ジメチル、イタコン酸ジエチル、イタコン酸ジイソプロピル、イタコン酸ジ−sec−ブチル、イタコン酸ジイソブチル、イタコン酸ジ−n−ブチル、イタコン酸ジ−2−エチルヘキシル、イタコン酸ジベンジル等が挙げられる。 Dialkyl esters of itaconic acid and derivatives thereof include dimethyl itaconate, diethyl itaconate, diisopropyl itaconate, di-sec-butyl itaconate, diisobutyl itaconate, di-n-butyl itaconate, di-2-ethylhexyl itaconate And dibenzyl itaconate.
有機カルボン酸のN−ビニルアミド誘導体としては、N−メチル−N−ビニルアセトアミド等が挙げられる。 Examples of N-vinylamide derivatives of organic carboxylic acids include N-methyl-N-vinylacetamide.
マレイミド及びその誘導体としては、N−フェニルマレイミド、N−シクロヘキシルマレイミド等が挙げられる。 Examples of maleimide and derivatives thereof include N-phenylmaleimide and N-cyclohexylmaleimide.
末端不飽和炭化水素及びその誘導体としては、1−ブテン、1−ペンテン、1−ヘキセン、1−オクテン、ビニルシクロヘキサン、塩化ビニル、アリルアルコール等が挙げられる。 Examples of terminal unsaturated hydrocarbons and derivatives thereof include 1-butene, 1-pentene, 1-hexene, 1-octene, vinylcyclohexane, vinyl chloride, and allyl alcohol.
不飽和結合含有有機ゲルマニウム化合物としては、アリルトリメチルゲルマニウム、アリルトリエチルゲルマニウム、アリルトリブチルゲルマニウム、トリメチルビニルゲルマニウム、トリエチルビニルゲルマニウム等が挙げられる。 Examples of the unsaturated bond-containing organic germanium compound include allyltrimethylgermanium, allyltriethylgermanium, allyltributylgermanium, trimethylvinylgermanium, triethylvinylgermanium, and the like.
これらのうちでは、アクリル酸アルキルエステル、メタアクリル酸アルキルエステル、スチレン、アクリロニトリル、メタアクリロニトリル、アリルトリメチルゲルマニウムが好ましい。 Among these, acrylic acid alkyl ester, methacrylic acid alkyl ester, styrene, acrylonitrile, methacrylonitrile, and allyltrimethylgermanium are preferable.
フッ素樹脂(C)に導入されるフッ素の量は、高分子化合物の質量に対して、好ましくは1〜60質量%、より好ましくは5〜50質量%、さらに好ましくは5〜40質量%である。フッ素の量が1質量%未満又は60質量%を超えると含フッ素溶媒(B)との相溶性が悪化して組成物を調製することが困難になることがある。 The amount of fluorine introduced into the fluororesin (C) is preferably 1 to 60% by mass, more preferably 5 to 50% by mass, and further preferably 5 to 40% by mass with respect to the mass of the polymer compound. . If the amount of fluorine is less than 1% by mass or more than 60% by mass, the compatibility with the fluorinated solvent (B) may deteriorate and it may be difficult to prepare a composition.
フッ素樹脂(C)は、重量平均分子量が3000〜1000000の高分子化合物が好ましく、5000〜500000の高分子化合物がより好ましい。フッ素樹脂(C)は、直鎖状、分岐状、環状のいずれでもよい。 The fluororesin (C) is preferably a polymer compound having a weight average molecular weight of 3000 to 1000000, more preferably 5000 to 500000. The fluororesin (C) may be linear, branched or cyclic.
<カチオン重合開始剤>
本発明の有機薄膜トランジスタ絶縁層用組成物には、さらに、光カチオン重合開始剤又は熱カチオン重合開始剤を添加することが好ましい。化合物(A)に含有される環状エーテル構造の開環付加反応が進行し易くなるからである。
<Cationic polymerization initiator>
It is preferable to add a photocationic polymerization initiator or a thermal cationic polymerization initiator to the composition for an organic thin film transistor insulating layer of the present invention. This is because the ring-opening addition reaction of the cyclic ether structure contained in the compound (A) easily proceeds.
該光カチオン重合開始剤、該熱カチオン重合開始剤としては、例えば、ヨードニウム塩、スルホニウム塩などを挙げることができる。 Examples of the photo cationic polymerization initiator and the thermal cationic polymerization initiator include iodonium salts and sulfonium salts.
ヨードニウム塩としては、例えば、ジフェニルヨードニウムヘキサフルオロホスフェート、ジフェニルヨードニウムヘキサフルオロアンチモネート、トリルキュミルヨードニウムテトラキス(ペンタフルオロフェニル)ボレート等が挙げられる。 Examples of the iodonium salt include diphenyliodonium hexafluorophosphate, diphenyliodonium hexafluoroantimonate, tolylcumyl iodonium tetrakis (pentafluorophenyl) borate, and the like.
スルホニウム塩としては、例えば、トリフェニルスルホニウムホスフェート、p−(フェニルチオ)フェニルジフェニルスルホニウムヘキサフルオロホスフェート、トリフェニルスルホニウムヘキサフルオロアンチモネート、p−(フェニルチオ)フェニルジフェニルスルホニウムヘキサフルオロアンチモネート、4,4’−ビス[ジ(β−ヒドロキシエトキシ)フェニルスルホニオ]フェニルスルフィド−ビス−ヘキサフルオロアンチモネート、4−[4−(4−tert−ブチルベンゾイル)フェニルチオ]フェニル−ジ(4−メチルフェニル)スルホニウムヘキサフルオロホスフェート等が挙げられる。 Examples of the sulfonium salt include triphenylsulfonium phosphate, p- (phenylthio) phenyldiphenylsulfonium hexafluorophosphate, triphenylsulfonium hexafluoroantimonate, p- (phenylthio) phenyldiphenylsulfonium hexafluoroantimonate, 4,4′- Bis [di (β-hydroxyethoxy) phenylsulfonio] phenyl sulfide-bis-hexafluoroantimonate, 4- [4- (4-tert-butylbenzoyl) phenylthio] phenyl-di (4-methylphenyl) sulfonium hexafluoro A phosphate etc. are mentioned.
該光カチオン重合開始剤として、具体的には、商品名ロードシル2074(ローディアジャパン株式会社製)、商品名アデカオプトマ−SP−150(株式会社ADEKA製)、商品名アデカオプトマ−SP−152(株式会社ADEKA製)、商品名アデカオプトマ−SP−170(株式会社ADEKA製)、商品名アデカオプトマ−SP−172(株式会社ADEKA製)などが挙げられる。また、特開平9−118663号公報記載のスルホニウム塩化合物も使用することができる。 Specific examples of the photocationic polymerization initiator include trade name Rhodosil 2074 (manufactured by Rhodia Japan), trade name Adekaoptoma-SP-150 (made by ADEKA), trade name Adekaoptoma-SP-152 (ADEKA Corporation). Product name) ADEKA OPTOMA-SP-170 (manufactured by ADEKA Corporation), trade name ADEKA OPTOMA-SP-172 (manufactured by ADEKA Corporation), and the like. Also, sulfonium salt compounds described in JP-A-9-118663 can be used.
該熱カチオン重合開始剤として、具体的には、商品名アデカオプトンCPシリーズ(株式会社ADEKA製)などが挙げられる。 Specific examples of the thermal cationic polymerization initiator include trade name Adeka Opton CP series (manufactured by ADEKA Corporation).
本発明の有機薄膜トランジスタ絶縁層用組成物における該光カチオン重合開始剤又は該熱カチオン重合開始剤の割合は、環状エーテル構造を有する基を含有する化合物(A)を100重量部としたときに、0.0001〜30重量部の範囲が好ましく、より好ましくは、0.001〜10重量部である。また、該光カチオン重合開始剤又は該熱カチオン重合開始剤は、それぞれ2種類以上を使用してもよい。 The ratio of the photocationic polymerization initiator or the thermal cationic polymerization initiator in the composition for an organic thin film transistor insulating layer of the present invention is 100 parts by weight of the compound (A) containing a group having a cyclic ether structure. The range of 0.0001-30 weight part is preferable, More preferably, it is 0.001-10 weight part. Further, two or more kinds of the cationic photopolymerization initiator or the thermal cationic polymerization initiator may be used.
環状エーテル構造を有する基を含有する化合物(A)、含フッ素溶媒(B)、及び、要すれば、フッ素樹脂(C)及びカチオン重合開始剤等を混合することにより本発明の有機薄膜トランジスタ絶縁層用組成物が得られる。 Organic thin-film transistor insulating layer of the present invention by mixing the compound (A) containing a group having a cyclic ether structure, a fluorine-containing solvent (B), and if necessary, a fluororesin (C) and a cationic polymerization initiator The composition for use is obtained.
本発明の有機薄膜トランジスタ絶縁層用組成物中にフッ素樹脂(C)を含有させる場合、その含有量は、化合物(A)100重量部に対して600重量部以下、好ましくは100〜500重量部である。 When the fluororesin (C) is contained in the composition for an organic thin film transistor insulating layer of the present invention, the content thereof is 600 parts by weight or less, preferably 100 to 500 parts by weight with respect to 100 parts by weight of the compound (A). is there.
有機薄膜トランジスタ絶縁層用組成物中のフッ素樹脂(C)の含有量が化合物(A)100重量部に対して600重量部を超えると有機薄膜トランジスタ絶縁層の耐溶剤性が低下することがある。 When content of the fluororesin (C) in the composition for organic thin-film transistor insulating layers exceeds 600 weight part with respect to 100 weight part of compounds (A), the solvent resistance of an organic thin-film transistor insulating layer may fall.
フッ素樹脂(C)として、水酸基を有するフッ素樹脂(C−1)のみを使用する場合は、本発明の有機薄膜トランジスタ絶縁層用組成物中のフッ素樹脂(C−1)の含有量は、化合物(A)100重量部に対して50〜600重量部、好ましくは100〜500重量部、より好ましくは200〜400重量部である。 When only the fluororesin (C-1) having a hydroxyl group is used as the fluororesin (C), the content of the fluororesin (C-1) in the composition for an organic thin film transistor insulating layer of the present invention is the compound ( A) It is 50-600 weight part with respect to 100 weight part, Preferably it is 100-500 weight part, More preferably, it is 200-400 weight part.
有機薄膜トランジスタ絶縁層用組成物中のフッ素樹脂(C−1)の含有量が化合物(A)100重量部に対して50重量部未満であると乾燥時に塗膜の凝集が起きることがあり、600重量部を超えると有機薄膜トランジスタ絶縁層の耐溶剤性が低下することがある。 When the content of the fluororesin (C-1) in the composition for an organic thin film transistor insulating layer is less than 50 parts by weight with respect to 100 parts by weight of the compound (A), the coating film may agglomerate during drying, and 600 When it exceeds the weight part, the solvent resistance of the organic thin film transistor insulating layer may be lowered.
また、この場合、有機薄膜トランジスタ絶縁層用組成物中の含フッ素溶媒(B)の含有量は、化合物(A)100重量部に対して100〜3000重量部、好ましくは500〜2000重量部、より好ましくは800〜1500重量部である。 In this case, the content of the fluorine-containing solvent (B) in the composition for an organic thin film transistor insulating layer is 100 to 3000 parts by weight, preferably 500 to 2000 parts by weight, based on 100 parts by weight of the compound (A). Preferably it is 800-1500 weight part.
有機薄膜トランジスタ絶縁層用組成物中の含フッ素溶媒(B)の含有量が化合物(A)100重量部に対して100重量部未満であると塗膜の平坦性が低下することがあり、3000重量部を超えると塗膜の膜質が低下し、有機薄膜トランジスタ絶縁層にピンホールが発生することがある。 When the content of the fluorine-containing solvent (B) in the composition for an organic thin film transistor insulating layer is less than 100 parts by weight with respect to 100 parts by weight of the compound (A), the flatness of the coating film may be deteriorated. When it exceeds the part, the film quality of the coating film is deteriorated, and pinholes may be generated in the organic thin film transistor insulating layer.
フッ素樹脂(C)としては、水酸基を有するフッ素樹脂(C−1)と活性水素と反応する官能基を含有するフッ素樹脂(C−2)とを混合して用いてもよい。フッ素樹脂(C−1)及びフッ素樹脂(C−2)に含有される官能基同士が反応して有機薄膜トランジスタ絶縁層の内部に架橋構造が形成されるため、絶縁層の分極が抑制され、耐溶剤性が高くなる。 As a fluororesin (C), you may mix and use the fluororesin (C-1) which has a hydroxyl group, and the fluororesin (C-2) containing the functional group which reacts with active hydrogen. Since the functional groups contained in the fluororesin (C-1) and the fluororesin (C-2) react with each other to form a crosslinked structure inside the organic thin film transistor insulating layer, polarization of the insulating layer is suppressed, Increases solvent resistance.
本発明の有機薄膜トランジスタ絶縁層用組成物は、有機薄膜トランジスタに含まれる絶縁層の形成に用いられる組成物である。有機薄膜トランジスタ絶縁層用組成物としては、オーバーコート層の形成に用いられる有機薄膜トランジスタオーバーコート層用組成物、ゲート絶縁層の形成に用いられる有機薄膜トランジスタゲート絶縁層用組成物が挙げられる。該有機薄膜トランジスタ絶縁層用組成物は、有機薄膜トランジスタのオーバーコート層の形成に用いられることが好ましい。 The composition for organic thin-film transistor insulating layers of this invention is a composition used for formation of the insulating layer contained in an organic thin-film transistor. As a composition for organic thin-film transistor insulating layers, the composition for organic thin-film transistor overcoat layers used for formation of an overcoat layer and the composition for organic thin-film transistor gate insulating layers used for formation of a gate insulating layer are mentioned. The organic thin film transistor insulating layer composition is preferably used for forming an overcoat layer of an organic thin film transistor.
本発明の有機薄膜トランジスタ絶縁層用組成物を用いて形成したオーバーコート層は、絶縁性及び気密性に優れている。そのため、該オーバーコート層を有する有機薄膜トランジスタは、該トランジスタに含まれている有機半導体化合物が周囲環境から有効に遮断されるので、大気中でも安定して駆動することができる。 The overcoat layer formed using the composition for an organic thin film transistor insulating layer of the present invention is excellent in insulation and airtightness. Therefore, the organic thin film transistor having the overcoat layer can be driven stably in the atmosphere because the organic semiconductor compound contained in the transistor is effectively cut off from the surrounding environment.
(有機薄膜トランジスタ)
図1は、本発明の一実施形態であるボトムゲートトップコンタクト型有機薄膜トランジスタの構造を示す模式断面図である。この有機薄膜トランジスタには、基板1と、基板1上に形成されたゲート電極2と、ゲート電極2上に形成されたゲート絶縁層3と、ゲート絶縁層3上に形成された有機半導体層4と、有機半導体層4上にチャネル部を挟んで形成されたソース電極5及びドレイン電極6と、素子全体を覆うオーバーコート絶縁層7とが、備えられている。
(Organic thin film transistor)
FIG. 1 is a schematic cross-sectional view showing the structure of a bottom gate top contact organic thin film transistor according to an embodiment of the present invention. The organic thin film transistor includes a substrate 1, a
ボトムゲートトップコンタクト型有機薄膜トランジスタは、例えば、基板上にゲート電極を形成し、ゲート電極上にゲート絶縁層を形成し、ゲート絶縁層上に有機半導体層を形成し、有機半導体層上にソース電極、ドレイン電極を形成し、オーバーコート絶縁層を形成することで製造することができる。 A bottom gate top contact type organic thin film transistor includes, for example, a gate electrode formed on a substrate, a gate insulating layer formed on the gate electrode, an organic semiconductor layer formed on the gate insulating layer, and a source electrode formed on the organic semiconductor layer. It can be manufactured by forming a drain electrode and forming an overcoat insulating layer.
図2は、本発明の一実施形態であるボトムゲートボトムコンタクト型有機薄膜トランジスタの構造を示す模式断面図である。この有機薄膜トランジスタには、基板1と、基板1上に形成されたゲート電極2と、ゲート電極2上に形成されたゲート絶縁層3と、ゲート絶縁層3上にチャネル部を挟んで形成されたソース電極5及びドレイン電極6と、ソース電極5及びドレイン電極6上に形成された有機半導体層4と、素子全体を覆うオーバーコート絶縁層7とが、備えられている。
FIG. 2 is a schematic cross-sectional view showing the structure of a bottom gate bottom contact type organic thin film transistor which is an embodiment of the present invention. In this organic thin film transistor, a substrate 1, a
ボトムゲートボトムコンタクト型有機薄膜トランジスタは、例えば、基板上にゲート電極を形成し、ゲート電極上にゲート絶縁層を形成し、ゲート絶縁層上にソース電極、ドレイン電極を形成し、ソース電極、ドレイン電極上に有機半導体層を形成し、オーバーコート絶縁層を形成することで製造することができる。 A bottom gate bottom contact type organic thin film transistor includes, for example, a gate electrode formed on a substrate, a gate insulating layer formed on the gate electrode, a source electrode and a drain electrode formed on the gate insulating layer, and a source electrode and a drain electrode. It can be manufactured by forming an organic semiconductor layer thereon and forming an overcoat insulating layer.
オーバーコート絶縁層の形成は、本発明のオーバーコート絶縁層用組成物を有機半導体層上に塗布、乾燥、硬化させることにより行う。 The overcoat insulating layer is formed by applying, drying and curing the overcoat insulating layer composition of the present invention on the organic semiconductor layer.
オーバーコート絶縁層用組成物は公知のスピンコート、ダイコート、スクリーン印刷、インクジェット等により有機半導体層上に塗布することができる。 The overcoat insulating layer composition can be applied onto the organic semiconductor layer by known spin coating, die coating, screen printing, inkjet, or the like.
有機薄膜トランジスタを構成する基板1、ゲート電極2、ソース電極5、ドレイン電極6及び有機半導体層4は、通常使用される材料及び方法で構成すればよい。例えば、基板の材料には樹脂やプラスチックの板やフィルム、ガラス板、シリコン板などが用いられる。電極の材料には、クロム、金、銀、アルミニウム等を用い、蒸着法、スパッタ法、印刷法、インクジェット法等公知の方法で形成する。
The substrate 1, the
有機半導体化合物としてはπ共役ポリマーが広く用いられ、例えば、ポリピロール類、ポリチオフェン類、ポリアニリン類、ポリアリルアミン類、フルオレン類、ポリカルバゾール類、ポリインドール類、ポリ(p−フェニレンビニレン)類を用いることができる。
また、有機溶媒への溶解性を有する低分子物質、例えば、ペンタセンなどの多環芳香族の誘導体、フタロシアニン誘導体、ペリレン誘導体、テトラチアフルバレン誘導体、テトラシアノキノジメタン誘導体、フラーレン類、カーボンナノチューブ類を用いることができる。具体的には、9,9−ジ−n−オクチルフルオレン−2,7−ジ(エチレンボロネート)と、5,5’−ジブロモ−2,2’−バイチオフェンとの縮合物等があげられる。
As organic semiconductor compounds, π-conjugated polymers are widely used. For example, polypyrroles, polythiophenes, polyanilines, polyallylamines, fluorenes, polycarbazoles, polyindoles, poly (p-phenylene vinylene) s are used. Can do.
In addition, low-molecular substances having solubility in organic solvents, for example, polycyclic aromatic derivatives such as pentacene, phthalocyanine derivatives, perylene derivatives, tetrathiafulvalene derivatives, tetracyanoquinodimethane derivatives, fullerenes, carbon nanotubes Can be used. Specific examples include condensates of 9,9-di-n-octylfluorene-2,7-di (ethylene boronate) and 5,5′-dibromo-2,2′-bithiophene. .
有機半導体層の形成は、例えば、有機半導体化合物に要すれば溶媒などを添加して有機半導体塗布液を調製し、これをゲート絶縁層上に塗布、乾燥させることにより行う。 The organic semiconductor layer is formed by, for example, adding an organic semiconductor coating solution by adding a solvent or the like if necessary for the organic semiconductor compound, and applying and drying this on the gate insulating layer.
使用される溶媒としては有機半導体化合物を溶解又は分散させるものであれば特に制限は無いが、好ましくは、常圧での沸点が50℃〜200℃の溶媒である。該溶媒としては、クロロホルム、トルエン、アニソール、2−ヘプタノン、プロピレングリコールモノメチルエーテルアセテート等が挙げられる。該有機半導体塗布液は、前記絶縁層塗布液と同様に公知のスピンコート、ダイコート、スクリーン印刷、インクジェット等によりゲート絶縁層上に塗布することができる。 The solvent to be used is not particularly limited as long as it dissolves or disperses the organic semiconductor compound, but is preferably a solvent having a boiling point of 50 ° C. to 200 ° C. at normal pressure. Examples of the solvent include chloroform, toluene, anisole, 2-heptanone, propylene glycol monomethyl ether acetate and the like. The organic semiconductor coating solution can be applied onto the gate insulating layer by known spin coating, die coating, screen printing, ink jetting, or the like in the same manner as the insulating layer coating solution.
本発明の有機薄膜トランジスタを用いて、有機薄膜トランジスタを有するディスプレイ用部材を好適に作製できる。該有機薄膜トランジスタを有するディスプレイ用部材を用いて、ディスプレイ用部材を備えるディスプレイを好適に作製できる。 By using the organic thin film transistor of the present invention, a display member having an organic thin film transistor can be suitably produced. Using a display member having the organic thin film transistor, a display including the display member can be suitably produced.
以下、本発明を実施例により説明するが、本発明は実施例に限定されるものではない。 EXAMPLES Hereinafter, although an Example demonstrates this invention, this invention is not limited to an Example.
合成例1
(高分子化合物1の合成)
不活性雰囲気下、2,7−ビス(1,3,2−ジオキサボロラン−2−イル)−9,9−ジオクチルフルオレンを5.20g、ビス(4−ブロモフェニル)−(4−セカンダリブチルフェニル)−アミンを4.50g、酢酸パラジウムを2.2mg、トリ(2−メチルフェニル)ホスフィンを15.1mg、メチルトリオクチルアンモニウムクロライド(アルドリッチ製、商品名「Aliquat(登録商標) 336」)を0.91g、トルエンを70ml混合し、105℃に加熱した。この反応溶液に2モル/kg炭酸ナトリウム水溶液を19ml滴下し、4時間還流させた。その後、フェニルホウ酸を121mg加え、さらに3時間還流させた。次いでジエチルジチアカルバミン酸ナトリウム水溶液を加え80℃で4時間撹拌した。冷却後、水(60ml)で3回、3重量%酢酸水溶液(60ml)で3回、水(60ml)で3回洗浄し、アルミナカラム、シリカゲルカラムを通すことにより精製した。得られたトルエン溶液をメタノール(3L)に滴下し、3時間撹拌した後、得られた固体をろ取し、乾燥させた。得られた下記式で表される高分子化合物1の収量は5.25gであった。ここで、下記式中のnは重合度を表す。
Synthesis example 1
(Synthesis of polymer compound 1)
Under an inert atmosphere, 5.7 g of 2,7-bis (1,3,2-dioxaborolan-2-yl) -9,9-dioctylfluorene, bis (4-bromophenyl)-(4-secondarybutylphenyl) -4.50 g of amine, 2.2 mg of palladium acetate, 15.1 mg of tri (2-methylphenyl) phosphine, methyltrioctylammonium chloride (manufactured by Aldrich, trade name “Aliquat® 336”) 91 g and 70 ml of toluene were mixed and heated to 105 ° C. 19 ml of 2 mol / kg sodium carbonate aqueous solution was added dropwise to the reaction solution, and the mixture was refluxed for 4 hours. Thereafter, 121 mg of phenylboric acid was added, and the mixture was further refluxed for 3 hours. Next, a sodium diethyldithiacarbamate aqueous solution was added, and the mixture was stirred at 80 ° C. for 4 hours. After cooling, the mixture was washed 3 times with water (60 ml), 3 times with a 3 wt% aqueous acetic acid solution (60 ml) and 3 times with water (60 ml), and purified by passing through an alumina column and a silica gel column. The obtained toluene solution was dropped into methanol (3 L) and stirred for 3 hours, and then the obtained solid was collected by filtration and dried. The yield of the obtained polymer compound 1 represented by the following formula was 5.25 g. Here, n in the following formula represents the degree of polymerization.
高分子化合物1の標準ポリスチレンから求めた重量平均分子量は2.6×105であった。該重量平均分子量の測定条件は、装置:島津製GPC、カラム:「Tskgel super HM−H」1本+「Tskgel super H2000」1本、移動相:THFであった。 The weight average molecular weight calculated | required from the standard polystyrene of the high molecular compound 1 was 2.6 * 10 < 5 >. The measurement conditions of the weight average molecular weight were apparatus: GPC manufactured by Shimadzu, column: one “Tskel super HM-H” + one “Tskel super H2000”, and mobile phase: THF.
合成例2
(高分子化合物2の合成)
2,3,4,5,6−ペンタフルオロスチレン(アルドリッチ製)2.00g、2,2’−アゾビス(2−メチルプロピオニトリル)0.01g、2,3,4,5,6−ペンタフルオロトルエン(和光純薬製)3.00gを、50ml耐圧容器(エース製)に入れ、アルゴンでバブリングした後、密栓し、60℃のオイルバス中で24時間重合させて、下式で表される高分子化合物2の2,3,4,5,6−ペンタフルオロトルエン溶液を得た。ここで、下記式中のnは重合度を表す。
Synthesis example 2
(Synthesis of polymer compound 2)
2,3,4,5,6-pentafluorostyrene (manufactured by Aldrich) 2.00 g, 2,2′-azobis (2-methylpropionitrile) 0.01 g, 2,3,4,5,6-penta Put 3.00 g of fluorotoluene (manufactured by Wako Pure Chemical Industries, Ltd.) into a 50 ml pressure vessel (manufactured by Ace), bubble with argon, seal tightly, and polymerize in an oil bath at 60 ° C. for 24 hours. A 2,3,4,5,6-pentafluorotoluene solution of
得られた高分子化合物2の標準ポリスチレンから求めた重量平均分子量は、88000であった。重量平均分子量の測定条件は、合成例1に記載した条件と同様であった。
The weight average molecular weight calculated | required from the standard polystyrene of the obtained high
実施例1
(有機薄膜トランジスタ絶縁層用組成物1の調製)
20mlのサンプル瓶に、「ルミフロン(登録商標)LF200F」(旭ガラス製、OH価45mgKOH/g)を40重量%含む2,3,4,5,6−ペンタフルオロトルエン溶液を2.00g、「アロンオキセタン(登録商標)OXT−221」(東亞合成製)を0.27g、「ロードシル(登録商標)2074」(ローディアジャパン株式会社製)を0.00054g、2,3,4,5,6−ペンタフルオロトルエン(和光純薬製)を2.00g入れ、混合して溶液を調製した。得られた溶液を孔径0.45μmのメンブレンフィルターでろ過して有機薄膜トランジスタ絶縁層用組成物1を調製した。
Example 1
(Preparation of Composition 1 for Organic Thin Film Transistor Insulating Layer)
In a 20 ml sample bottle, 2.00 g of 2,3,4,5,6-pentafluorotoluene solution containing 40% by weight of “Lumiflon (registered trademark) LF200F” (manufactured by Asahi Glass Co., Ltd., OH value 45 mgKOH / g) 0.27 g of “Aron Oxetane (registered trademark) OXT-221” (manufactured by Toagosei Co., Ltd.), 0.00054 g of “Lordsil (registered trademark) 2074” (manufactured by Rhodia Japan Ltd.), 2,3,4,5,6- 2.00 g of pentafluorotoluene (manufactured by Wako Pure Chemical Industries, Ltd.) was added and mixed to prepare a solution. The obtained solution was filtered through a membrane filter having a pore diameter of 0.45 μm to prepare an organic thin film transistor insulating layer composition 1.
「アロンオキセタン(登録商標)OXT−221」は、下記式で表される構造を有する化合物である。 “Aron oxetane (registered trademark) OXT-221” is a compound having a structure represented by the following formula.
「ルミフロン(登録商標)LF200F」は、式(2−a)で表される繰り返し単位と式(3−a)で表される繰り返し単位を有する高分子化合物である。式(2−a)中、Xはフッ素原子、塩素原子又はトリフルオロメチル基を表す。式(3−a)中、R4はアルキレン基を表す。 “Lumiflon (registered trademark) LF200F” is a polymer compound having a repeating unit represented by the formula (2-a) and a repeating unit represented by the formula (3-a). In formula (2-a), X represents a fluorine atom, a chlorine atom or a trifluoromethyl group. In formula (3-a), R 4 represents an alkylene group.
(電界効果型有機薄膜トランジスタの作製)
高分子化合物1をキシレンに溶解して、濃度が0.5重量%である溶液(有機半導体組成物)を作製し、該溶液を孔径0.45μmのメンブランフィルターでろ過して塗布液を調製した。
(Production of field-effect organic thin-film transistors)
Polymer compound 1 was dissolved in xylene to prepare a solution (organic semiconductor composition) having a concentration of 0.5% by weight, and the solution was filtered through a membrane filter having a pore size of 0.45 μm to prepare a coating solution. .
得られた高分子化合物1を含む塗布液を、ボトムゲートボトムコンタクト素子(協同インター製)上にスピンコート法により塗布し、窒素中200℃で10分間乾燥させて約60nmの厚さの活性層を形成した。
次いで、得られた活性層上に、有機薄膜トランジスタ絶縁層用組成物1をスピンコート法により塗布した。その後、50℃で5分間乾燥させ、アルゴン中、UV/オゾンクリーナー(Model UV−1、サムコ製)を用いて紫外線(254nm)を1分間照射した。その後、100℃で30分焼成して約4μmの厚さのオーバーコート絶縁層を形成し、電界効果型有機薄膜トランジスタ1を作製した。
The obtained coating solution containing the polymer compound 1 is applied on a bottom gate bottom contact element (manufactured by Kyodo Inter) by a spin coating method and dried in nitrogen at 200 ° C. for 10 minutes to obtain an active layer having a thickness of about 60 nm. Formed.
Subsequently, the composition 1 for organic thin-film transistor insulating layers was apply | coated by the spin coat method on the obtained active layer. Then, it dried at 50 degreeC for 5 minutes, and irradiated with the ultraviolet-ray (254 nm) for 1 minute using UV / ozone cleaner (Model UV-1, the Samco make) in argon. Thereafter, the film was baked at 100 ° C. for 30 minutes to form an overcoat insulating layer having a thickness of about 4 μm, and a field effect organic thin film transistor 1 was produced.
<トランジスタ特性>
作製した電界効果型有機薄膜トランジスタ1について、大気中でトランジスタ特性を測定した。ゲート電圧Vgを20〜−40V、ソース・ドレイン間電圧Vsdを0〜−40Vに変化させた条件で、そのトランジスタ特性を真空プロ−バ(BCT22MDC−5−HT−SCU;Nagase Electronic Equipments Service Co. LTD製)を用いて大気中で測定した。測定した閾値電圧(Vth)を表1に示す。
<Transistor characteristics>
About the produced field effect type organic thin-film transistor 1, the transistor characteristic was measured in air | atmosphere. Under the condition that the gate voltage Vg was changed to 20 to -40 V and the source-drain voltage Vsd was changed to 0 to -40 V, the transistor characteristics were changed to a vacuum probe (BCT22MDC-5-HT-SCU; Nagase Electronic Equipments Service Co. Ltd.) and measured in the air. Table 1 shows the measured threshold voltage (Vth).
比較例1
(電界効果型有機薄膜トランジスタの作製)
有機薄膜トランジスタ絶縁層用組成物1のかわりに、高分子化合物2の2,3,4,5,6−ペンタフルオロトルエン溶液1.00gに2,3,4,5,6−ペンタフルオロトルエンを1.00g添加し、孔径0.45μmのメンブレンフィルターでろ過して調製した有機薄膜トランジスタ絶縁層用組成物2を用いた以外は、実施例1と同様にして電界効果型有機薄膜トランジスタを作製し、大気中でトランジスタ特性を測定した。オーバーコート絶縁層の厚みは、約6μmであった。閾値電圧の絶対値は40V以上であり、ゲート電圧Vgを20〜−40V、ソース・ドレイン間電圧Vsdを0〜−40Vに変化させた条件では駆動しなかった。
Comparative Example 1
(Production of field-effect organic thin-film transistors)
Instead of the composition 1 for an organic thin film transistor insulating layer, 1 part of 2,3,4,5,6-pentafluorotoluene is added to 1.00 g of a 2,3,4,5,6-pentafluorotoluene solution of the
1…基板、
2…ゲート電極、
3…ゲート絶縁層、
4…有機半導体層、
5…ソース電極、
6…ドレイン電極、
7…オーバーコート。
1 ... substrate,
2 ... Gate electrode,
3 ... gate insulating layer,
4 ... Organic semiconductor layer,
5 ... Source electrode,
6 ... drain electrode,
7 ... Overcoat.
Claims (10)
該含フッ素溶媒が、炭素数6〜20の芳香族フッ素化合物である、有機薄膜トランジスタ絶縁層用組成物。 An organic thin film transistor insulating layer composition comprising a compound (A) containing a group having a cyclic ether structure and a fluorine-containing solvent (B) ,
The composition for organic thin-film transistor insulating layers whose this fluorine-containing solvent is a C6-C20 aromatic fluorine compound .
フッ素樹脂(C)が、下に定義されるフッ素樹脂(C−1)及び下に定義されるフッ素樹脂(C−2)からなる群から選ばれる少なくとも1種のフッ素樹脂である、有機薄膜トランジスタ絶縁層用組成物。
フッ素樹脂(C−1):
式(3)
[式中、Xは、フッ素原子を有する炭素数1〜20の一価の有機基、フッ素原子又は塩素原子を表す。]
で表される繰り返し単位と、式(4)
[式中、R9は、アルキレン基を表す。該アルキレン基中の水素原子は、フッ素原子で置換されていてもよい。]
で表される繰り返し単位とを含有するフッ素樹脂
フッ素樹脂(C−2):
式(5)
[式中、R10〜R12は、それぞれ独立に、水素原子又は炭素数1〜20の一価の有機基を表す。該炭素数1〜20の一価の有機基中の水素原子はフッ素原子で置換されていてもよい。Rは、水素原子又は炭素数1〜20の一価の有機基を表す。Rfは、フッ素原子又はフッ素原子を有する炭素数1〜20の一価の有機基を表す。Raaは、炭素数1〜20の二価の有機基を表す。該二価の有機基中の水素原子は、フッ素原子で置換されていてもよい。aは、0〜20の整数を表し、mは、1〜5の整数を表す。Raaが複数個ある場合、それらは同一でも相異なっていてもよい。Rが複数個ある場合、それらは同一でも相異なっていてもよい。Rfが複数個ある場合、それらは同一でも相異なっていてもよい。]で表される繰り返し単位を含有し、かつ、第1の官能基を2つ以上含有し、該第1の官能基が、電磁波もしくは熱の作用により、活性水素と反応する第2の官能基を生成する官能基であるフッ素樹脂 An organic thin film transistor insulating layer composition comprising a compound (A) containing a group having a cyclic ether structure, a fluorinated solvent (B), and a fluororesin (C),
Organic thin film transistor insulation wherein the fluororesin (C) is at least one fluororesin selected from the group consisting of a fluororesin (C-1) defined below and a fluororesin (C-2) defined below Layer composition.
Fluororesin (C-1):
Formula (3)
[In formula, X represents a C1-C20 monovalent organic group which has a fluorine atom, a fluorine atom, or a chlorine atom. ]
A repeating unit represented by formula (4)
[Wherein R 9 represents an alkylene group. A hydrogen atom in the alkylene group may be substituted with a fluorine atom. ]
Fluororesin (C-2) containing a repeating unit represented by:
Formula (5)
[In formula, R < 10 > -R < 12 > represents a hydrogen atom or a C1-C20 monovalent organic group each independently. The hydrogen atom in the monovalent organic group having 1 to 20 carbon atoms may be substituted with a fluorine atom. R represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms. Rf represents a fluorine atom or a monovalent organic group having 1 to 20 carbon atoms having a fluorine atom. Raa represents a C1-C20 divalent organic group. A hydrogen atom in the divalent organic group may be substituted with a fluorine atom. a represents an integer of 0 to 20, and m represents an integer of 1 to 5. When there are a plurality of Raa, they may be the same or different. When there are a plurality of R, they may be the same or different. When there are a plurality of Rf, they may be the same or different. And a second functional group containing two or more first functional groups, the first functional group reacting with active hydrogen by the action of electromagnetic waves or heat. Fluororesin, a functional group that produces
[式中、R1〜R3は、それぞれ独立に、水素原子又は炭素数1〜20の一価の有機基を表す。該有機基中の水素原子はフッ素原子で置換されていてもよい。]
で表される基及び、式(2)
[式中、R4〜R8は、それぞれ独立に、水素原子又は炭素数1〜20の一価の有機基を表す。該有機基中の水素原子はフッ素原子で置換されていてもよい。]
で表される基からなる群から選ばれる少なくとも1種の基である請求項1又は2に記載の有機薄膜トランジスタ絶縁層用組成物。 A group having a cyclic ether structure is represented by the formula (1)
[In formula, R < 1 > -R < 3 > represents a hydrogen atom or a C1-C20 monovalent organic group each independently. A hydrogen atom in the organic group may be substituted with a fluorine atom. ]
A group represented by formula (2)
[In formula, R < 4 > -R < 8 > represents a hydrogen atom or a C1-C20 monovalent organic group each independently. A hydrogen atom in the organic group may be substituted with a fluorine atom. ]
The composition for organic thin-film transistor insulating layers according to claim 1 or 2 , which is at least one group selected from the group consisting of groups represented by formula ( 1 ).
[式中、Xaは、酸素原子又は硫黄原子を表す。R13及びR14は、それぞれ独立に、水素原子又は炭素数1〜20の一価の有機基を表す。]
で表される基である請求項2に記載の有機薄膜トランジスタ絶縁層用組成物。 The first functional group has the formula (6)
[Wherein, Xa represents an oxygen atom or a sulfur atom. R 13 and R 14 each independently represent a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms. ]
The composition for an organic thin film transistor insulating layer according to claim 2 , which is a group represented by the formula:
[式中、Xbは、酸素原子又は硫黄原子を表す。R15、R16及びR17は、それぞれ独立に、水素原子又は炭素数1〜20の一価の有機基を表す。]
で表される基である請求項2に記載の有機薄膜トランジスタ絶縁層用組成物。 The first functional group has the formula (7)
[Wherein, Xb represents an oxygen atom or a sulfur atom. R 15 , R 16 and R 17 each independently represent a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms. ]
The composition for an organic thin film transistor insulating layer according to claim 2 , which is a group represented by the formula:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011185734A JP5890633B2 (en) | 2010-08-30 | 2011-08-29 | Composition for organic thin film transistor insulating layer and organic thin film transistor |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010192134 | 2010-08-30 | ||
JP2010192134 | 2010-08-30 | ||
JP2011185734A JP5890633B2 (en) | 2010-08-30 | 2011-08-29 | Composition for organic thin film transistor insulating layer and organic thin film transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012074683A JP2012074683A (en) | 2012-04-12 |
JP5890633B2 true JP5890633B2 (en) | 2016-03-22 |
Family
ID=45772787
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011185734A Expired - Fee Related JP5890633B2 (en) | 2010-08-30 | 2011-08-29 | Composition for organic thin film transistor insulating layer and organic thin film transistor |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP5890633B2 (en) |
TW (1) | TWI488845B (en) |
WO (1) | WO2012029700A1 (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6056443B2 (en) * | 2012-12-12 | 2017-01-11 | 住友化学株式会社 | Insulating layer material and organic thin film transistor formed using the insulating layer material |
US9864248B2 (en) | 2013-12-27 | 2018-01-09 | Sharp Kabushiki Kaisha | Semiconductor device and display device |
EP3255495A4 (en) | 2015-02-05 | 2018-04-04 | Asahi Glass Company, Limited | Photosensitive resin composition, production method for resin film, production method for organic semiconductor element, and fluorine-containing polymer |
JP6443148B2 (en) * | 2015-03-16 | 2018-12-26 | 住友化学株式会社 | Composition and film produced using the composition |
EP3270408B1 (en) * | 2015-03-25 | 2021-01-06 | Toppan Printing Co., Ltd. | Thin film transistor, thin film transistor manufacturing method, and image display device using a thin film transistor |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61101083A (en) * | 1984-10-24 | 1986-05-19 | Matsushita Electric Ind Co Ltd | Solar battery module |
JPH0613664B2 (en) * | 1985-03-02 | 1994-02-23 | 日本ペイント株式会社 | Paint composition |
JP3959735B2 (en) * | 2001-03-13 | 2007-08-15 | Jsr株式会社 | Radiation sensitive refractive index changing composition and use thereof |
CA2469912A1 (en) * | 2001-12-19 | 2003-06-26 | Avecia Limited | Organic field effect transistor with an organic dielectric |
JP4731840B2 (en) * | 2004-06-14 | 2011-07-27 | キヤノン株式会社 | Field effect transistor and manufacturing method thereof |
JP4450214B2 (en) * | 2005-03-11 | 2010-04-14 | セイコーエプソン株式会社 | Organic thin film transistor, electronic device and electronic equipment |
JP2006259383A (en) * | 2005-03-17 | 2006-09-28 | Seiko Epson Corp | Fabricating method for substrate for electronic device, substrate for electronic device, electronic device, and electronic equipment |
JP4802933B2 (en) * | 2006-08-17 | 2011-10-26 | セイコーエプソン株式会社 | Semiconductor device, electronic device and electronic apparatus |
JP5298680B2 (en) * | 2007-07-24 | 2013-09-25 | 住友化学株式会社 | Composition for organic transistor insulating film |
JP2009049396A (en) * | 2007-07-24 | 2009-03-05 | Sumitomo Chemical Co Ltd | Composition for organic transistor insulating film |
JP5186865B2 (en) * | 2007-10-01 | 2013-04-24 | 住友化学株式会社 | Composition for organic transistor insulating film |
JP5441374B2 (en) * | 2008-07-30 | 2014-03-12 | 住友化学株式会社 | Semiconductor element manufacturing method, semiconductor element, light emitting device, display device, and driving substrate |
EP2320467B1 (en) * | 2008-08-28 | 2014-08-13 | Sumitomo Chemical Company, Limited | Resin composition, gate insulating layer and organic thin film transistor |
JP2010182862A (en) * | 2009-02-05 | 2010-08-19 | Dic Corp | Method of forming low-dielectric-constant insulating material layer, and layer or pattern formed by the method |
-
2011
- 2011-08-29 WO PCT/JP2011/069415 patent/WO2012029700A1/en active Application Filing
- 2011-08-29 JP JP2011185734A patent/JP5890633B2/en not_active Expired - Fee Related
- 2011-08-29 TW TW100130862A patent/TWI488845B/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP2012074683A (en) | 2012-04-12 |
WO2012029700A1 (en) | 2012-03-08 |
TW201219376A (en) | 2012-05-16 |
TWI488845B (en) | 2015-06-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5479817B2 (en) | Resin composition for organic thin film transistor gate insulating layer, gate insulating layer, and organic thin film transistor | |
JP5695467B2 (en) | Resin composition for organic thin film transistor insulating layer, overcoat insulating layer, and organic thin film transistor | |
JP6034056B2 (en) | Organic thin film transistor insulating layer material | |
WO2012161106A1 (en) | Organic thin-film transistor insulating layer material | |
WO2011062093A9 (en) | Optical and thermal energy crosslinkable insulating layer material for organic thin film transistor | |
JP5890633B2 (en) | Composition for organic thin film transistor insulating layer and organic thin film transistor | |
US9461257B2 (en) | Electronic device insulating layer, and method for producing electronic device insulating layer | |
EP2797110B1 (en) | Insulation-layer material for electronic device, and electronic device | |
WO2011125690A1 (en) | Composition, containing a fluorine organic compound solvent, for use in an organic thin-film transistor insulation layer | |
KR20110119700A (en) | Resin compositions for insulating layer | |
WO2011034069A1 (en) | Photo-crosslinkable material for organic thin film transistor insulating layer | |
WO2012002436A1 (en) | Insulating layer material for organic thin-film transistor, and organic thin-film transistor | |
JP2016033182A (en) | Composition and organic thin film transistor using the same | |
JP5980522B2 (en) | Organic thin film transistor insulating layer material | |
JP6056443B2 (en) | Insulating layer material and organic thin film transistor formed using the insulating layer material | |
WO2013031820A1 (en) | Organic thin film transistor insulating layer material | |
JP2010037462A (en) | Resin composition for gate insulating layer | |
JP2013064095A (en) | Organic thin-film transistor insulating layer material |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20140612 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20150513 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150526 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150717 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160209 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160219 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5890633 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |