JP5867606B2 - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
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Description
本発明の実施の形態1にかかる超接合MOS型半導体装置について、超接合MOSFETを例に説明する。図1は、本発明の実施の形態1にかかる超接合MOSFETの構造を示す斜視図である。図1に示すように、実施の形態1にかかる超接合MOSFET100は、半導体基板(後述するエピタキシャル基板)の第1主面(おもて面)側にMOSゲート(金属−酸化膜−半導体からなる絶縁ゲート)構造を配設し、第2主面(裏面)側にn+ドレイン層11およびドレイン電極12を備える。前記MOSゲート構造を含むプレーナ型MOSFETのおもて面構造として、pベース領域3、n型表面領域4、p+コンタクト領域5、n+ソース領域6、ゲート絶縁膜7、ゲート電極8、層間絶縁膜9およびソース電極10などが含まれる。
次に、本発明の実施の形態2にかかる超接合MOS型半導体装置について、超接合MOSFETを例に説明する。図7は、本発明の実施の形態2にかかる超接合MOSFETの構造を示す斜視図である。実施の形態2にかかる超接合MOSFET100の並列pn層20は、複数回のエピタキシャル層を積層して形成される構成を有する。実施の形態2において、並列pn層20を構成するn型領域1およびp型領域2は、次のように形成される。n型エピタキシャル層を成長させるごとに、n型エピタキシャル層にp型領域2を形成するためにボロンなどのp型不純物のイオン注入を行い、導入したp型不純物を拡散させてn型エピタキシャル層にp型領域2を選択的に形成する。n型エピタキシャル層の、p型領域2を形成していない部分がn型領域1となる。例えば、略円弧状のpn接合面を有する並列pn層20が複数回積層され、基板深さ方向に波型の不純物濃度分布(以下、波型の不純物濃度分布とする)を有する並列pn層20が形成される。
2 p型領域
3 pベース領域
4 n型表面領域
5 p+コンタクト領域
6 n+ソース領域
7 ゲート絶縁膜
8 ゲート電極
9 層間絶縁膜
10 ソース電極
11 n+ドレイン層
12 ドレイン電極
20 並列pn層
21 n型高濃度領域
22 n型低濃度領域
23 p型高濃度領域
24 p型低濃度領域
26 p型低濃度領域の下端部
26a p型低濃度領域の高濃度の下端部
26b p型低濃度領域の低濃度の下端部
Claims (4)
- 第1導電型半導体基板の第1主面に設けられた、絶縁ゲート構造と、
前記第1導電型半導体基板の前記第1主面と、当該第1主面に対して反対側の第2主面との間に設けられたドリフト層と、
を備え、
前記ドリフト層は、
前記第1主面に平行な方向の幅よりも前記第1主面に直交する方向の長さが長い第1導電型領域と、前記第1主面に平行な方向の幅よりも前記第1主面に直交する方向の長さが長く、前記第1主面に平行な方向に前記第1導電型領域と交互に接触配列された第2導電型領域と、を有し、前記第1導電型領域と前記第2導電型領域との間のpn接合が前記第1主面に直交する方向に延びる並列pn層であり、
前記第2導電型領域の前記第2主面側の端部には、前記第1主面に平行な方向で、且つ前記第1導電型領域と前記第2導電型領域とが並ぶ第1方向に直交する第2方向に所定のピッチで高低を繰り返す不純物濃度分布を有する第2導電型の第2主面側領域が接していることを特徴とする半導体装置。 - 前記第2主面側領域は、
前記第2導電型領域の前記第2主面側の端部よりも高不純物濃度で、且つ前記第2導電型領域の前記第1方向の幅よりも前記第1方向の幅が広い第2主面側高濃度領域と、
前記第2導電型領域の前記第2主面側の端部よりも低不純物濃度で、且つ前記第2導電型領域の前記第1方向の幅よりも前記第1方向の幅が狭い第2主面側低濃度領域と、を備え、
前記第2主面側高濃度領域と前記第2主面側低濃度領域とは、前記第2方向に交互に繰り返し連続して配置されていることを特徴とする請求項1に記載の半導体装置。 - 前記所定のピッチは、前記第1導電型領域と前記第2導電型領域との繰り返しピッチよりも小さいことを特徴とする請求項1または2に記載の半導体装置。
- 請求項2に記載の半導体装置の製造方法であって、
前記第2方向に延びるストライプ状の開口部を有するマスクを用いてイオン注入を行うことにより前記第2主面側領域を形成する形成工程を含み、
前記マスクの前記開口部は、ストライプの延びる方向に、前記第2主面側高濃度領域の形成領域に対応する部分を露出する第1開口部と、前記第2主面側低濃度領域の形成領域に対応する部分を露出する、前記第1開口部よりも開口面積の狭い第2開口部とが交互に配置されてなるストライプパターンとなっていることを特徴とする半導体装置の製造方法。
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JP2014525784A JP5867606B2 (ja) | 2012-07-19 | 2013-07-04 | 半導体装置および半導体装置の製造方法 |
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JP6324805B2 (ja) * | 2014-05-19 | 2018-05-16 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
US20150372132A1 (en) * | 2014-06-23 | 2015-12-24 | Vishay-Siliconix | Semiconductor device with composite trench and implant columns |
US9887259B2 (en) | 2014-06-23 | 2018-02-06 | Vishay-Siliconix | Modulated super junction power MOSFET devices |
US9882044B2 (en) | 2014-08-19 | 2018-01-30 | Vishay-Siliconix | Edge termination for super-junction MOSFETs |
CN105529262A (zh) * | 2014-09-29 | 2016-04-27 | 无锡华润华晶微电子有限公司 | 一种垂直双扩散金属氧化物半导体场效应管及其制作方法 |
JP6782529B2 (ja) | 2015-01-29 | 2020-11-11 | 富士電機株式会社 | 半導体装置 |
CN106158626A (zh) * | 2015-03-30 | 2016-11-23 | 中芯国际集成电路制造(上海)有限公司 | 功率器件及其形成方法 |
US9960269B2 (en) * | 2016-02-02 | 2018-05-01 | Renesas Electronics Corporation | Semiconductor device and method of manufacturing the same |
CN109643656A (zh) * | 2016-09-02 | 2019-04-16 | 新电元工业株式会社 | Mosfet以及电力转换电路 |
JP6809071B2 (ja) * | 2016-09-14 | 2021-01-06 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
US10580884B2 (en) * | 2017-03-08 | 2020-03-03 | D3 Semiconductor LLC | Super junction MOS bipolar transistor having drain gaps |
JP7081876B2 (ja) * | 2017-12-19 | 2022-06-07 | ラピスセミコンダクタ株式会社 | 半導体装置及び半導体装置の製造方法 |
DE102018108178A1 (de) * | 2018-04-06 | 2019-10-10 | Infineon Technologies Ag | Halbleiterbauelement mit Grabenstruktur und Herstellungsverfahren |
JP7092188B2 (ja) * | 2018-04-19 | 2022-06-28 | 日産自動車株式会社 | 半導体装置及びその製造方法 |
JP6777198B2 (ja) * | 2019-07-03 | 2020-10-28 | 富士電機株式会社 | 半導体装置 |
JP7443702B2 (ja) | 2019-09-10 | 2024-03-06 | 富士電機株式会社 | 半導体装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011003609A (ja) * | 2009-06-16 | 2011-01-06 | Toshiba Corp | 電力用半導体素子 |
JP2011003729A (ja) * | 2009-06-18 | 2011-01-06 | Fuji Electric Systems Co Ltd | 半導体装置 |
JP2011249712A (ja) * | 2010-05-31 | 2011-12-08 | Toshiba Corp | 半導体装置及びその製造方法 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1019720B (zh) | 1991-03-19 | 1992-12-30 | 电子科技大学 | 半导体功率器件 |
DE4309764C2 (de) | 1993-03-25 | 1997-01-30 | Siemens Ag | Leistungs-MOSFET |
GB2309336B (en) | 1996-01-22 | 2001-05-23 | Fuji Electric Co Ltd | Semiconductor device |
JPH09266311A (ja) | 1996-01-22 | 1997-10-07 | Fuji Electric Co Ltd | 半導体装置及びその製造方法 |
JP3988262B2 (ja) * | 1998-07-24 | 2007-10-10 | 富士電機デバイステクノロジー株式会社 | 縦型超接合半導体素子およびその製造方法 |
US6475864B1 (en) * | 1999-10-21 | 2002-11-05 | Fuji Electric Co., Ltd. | Method of manufacturing a super-junction semiconductor device with an conductivity type layer |
JP4843843B2 (ja) * | 2000-10-20 | 2011-12-21 | 富士電機株式会社 | 超接合半導体素子 |
US6995426B2 (en) * | 2001-12-27 | 2006-02-07 | Kabushiki Kaisha Toshiba | Semiconductor device having vertical metal insulator semiconductor transistors having plural spatially overlapping regions of different conductivity type |
JP4851694B2 (ja) | 2004-08-24 | 2012-01-11 | 株式会社東芝 | 半導体装置の製造方法 |
EP1742258A1 (en) * | 2005-07-08 | 2007-01-10 | STMicroelectronics S.r.l. | Semiconductor power device with multiple drain and corresponding manufacturing process |
JP5052025B2 (ja) * | 2006-03-29 | 2012-10-17 | 株式会社東芝 | 電力用半導体素子 |
JP2008091450A (ja) | 2006-09-29 | 2008-04-17 | Toshiba Corp | 半導体素子 |
JP2008124346A (ja) * | 2006-11-14 | 2008-05-29 | Toshiba Corp | 電力用半導体素子 |
JP5365016B2 (ja) | 2008-02-06 | 2013-12-11 | 富士電機株式会社 | 半導体素子およびその製造方法 |
JP2009272397A (ja) * | 2008-05-02 | 2009-11-19 | Toshiba Corp | 半導体装置 |
JP5013436B2 (ja) * | 2009-06-04 | 2012-08-29 | 三菱電機株式会社 | 電力用半導体装置 |
JP5462020B2 (ja) * | 2009-06-09 | 2014-04-02 | 株式会社東芝 | 電力用半導体素子 |
JP5606019B2 (ja) * | 2009-07-21 | 2014-10-15 | 株式会社東芝 | 電力用半導体素子およびその製造方法 |
US8466510B2 (en) * | 2009-10-30 | 2013-06-18 | Alpha And Omega Semiconductor Incorporated | Staggered column superjunction |
CN102804386B (zh) | 2010-01-29 | 2016-07-06 | 富士电机株式会社 | 半导体器件 |
CN102208447B (zh) * | 2011-05-20 | 2013-04-24 | 无锡新洁能股份有限公司 | 一种具有超结结构的半导体器件及其制造方法 |
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2013
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011003609A (ja) * | 2009-06-16 | 2011-01-06 | Toshiba Corp | 電力用半導体素子 |
JP2011003729A (ja) * | 2009-06-18 | 2011-01-06 | Fuji Electric Systems Co Ltd | 半導体装置 |
JP2011249712A (ja) * | 2010-05-31 | 2011-12-08 | Toshiba Corp | 半導体装置及びその製造方法 |
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