JP5841918B2 - センサ装置 - Google Patents
センサ装置 Download PDFInfo
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- JP5841918B2 JP5841918B2 JP2012184849A JP2012184849A JP5841918B2 JP 5841918 B2 JP5841918 B2 JP 5841918B2 JP 2012184849 A JP2012184849 A JP 2012184849A JP 2012184849 A JP2012184849 A JP 2012184849A JP 5841918 B2 JP5841918 B2 JP 5841918B2
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- wiring
- insulating film
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
- G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
- G01F1/684—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow
- G01F1/688—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow using a particular type of heating, cooling or sensing element
- G01F1/69—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow using a particular type of heating, cooling or sensing element of resistive type
- G01F1/692—Thin-film arrangements
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
- G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
- G01F1/684—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow
- G01F1/6842—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow with means for influencing the fluid flow
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
- G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
- G01F1/684—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow
- G01F1/6845—Micromachined devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/146—Mixed devices
- H01L2924/1461—MEMS
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Fluid Mechanics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Measuring Volume Flow (AREA)
Description
熱式流量計のように検出部に薄膜構造を備えたセンサ素子は、検出部を部分的に露出させるために検出部または検出部周辺に金型を押しつけることによりモールド樹脂が検出部に流れ込むことを防止する製造方法が提案されている。
さらに基板2を裏面からエッチングすることで薄膜部を形成しダイアフラム4を形成する。
回路チップ22は電源の供給やセンサ信号の取り出しのためのリード部材31〜35に、金線などのボンディングワイヤー24bによってに電気的に接続される。このように接着、接続されたセンサ素子1、回路チップ22、リード部材31〜35を金型に投入し、金型内にモールド樹脂23を充填し硬化させることでセンサパッケージ21となる。図4には図示していないが,回路チップ22の表面はモールド樹脂23で覆われている。また、センサ素子1においては、少なくとも薄膜部4が露出するようにモールド樹脂で覆われている。センサ素子1の薄膜部4を露出させ空気流に晒す構造である。また、外部との電源供給、センサ信号の取り出しのためリード部材31〜35の端部がモールド樹脂23から露出している。リード部材31〜35としてはCu系素材のほかFe系素材などが用いられる。また、モールド樹脂23としては、エポキシ系の封止材などが用いられる。本実施形態では、リード部材31を、センサ素子1や回路チップを接着させるための支持材として利用するとともに、電源の供給などの電気的に接続する部材としても利用しているが、別部材とすることもできる。
Claims (7)
- 基板上に形成した下層絶縁膜と、前記下層絶縁膜上に形成した検出部と、前記検出部から引き出された配線と、前記配線上に形成した上層絶縁膜と、からなるセンサ素子と、
前記センサ素子の前記検出部が形成された表面が露出するように部分的に被覆することによって形成した露出部を備えたモールド樹脂と、を備え、
前記露出部の端部における前記配線を部分的に除去した配線除去部を形成したことを特徴とするセンサ装置。 - 請求項1記載のセンサ装置において、
前記上層絶縁膜と前記下層絶縁膜とは、同一材料からなる絶縁膜で形成され、
前記配線の前記配線除去部において前記上層絶縁膜と下層絶縁膜が接するように設けられたことを特徴とするセンサ装置。 - 請求項1または2のセンサ装置において、
前記配線除去部が形成された部位の前記センサ素子表面が平坦となるように前記上層絶縁膜を前記配線の厚みよりも段差が小さくなるように平坦化したことを特徴とするセンサ装置。 - 請求項1乃至3のいずれかのセンサ装置において、
前記配線除去部は、1つの配線内に複数個設けられていることを特徴とするセンサ装置。 - 請求項4のセンサ装置において、
前記配線除去部は、複数列設けられており、
前記複数列の前記配線除去部は、互い違いに配置されていることを特徴とするセンサ装置。 - 請求項1乃至5のいずれかのセンサ装置において、
前記配線は、金属材料で形成されたことを特徴とするセンサ装置。 - 請求項1乃至6のいずれかのセンサ装置において、
前記配線は、前記検出部に発熱部を備え前記発熱部に電流を流すための配線であることを特徴とするセンサ装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012184849A JP5841918B2 (ja) | 2012-08-24 | 2012-08-24 | センサ装置 |
PCT/JP2013/070268 WO2014030493A1 (ja) | 2012-08-24 | 2013-07-26 | センサ装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012184849A JP5841918B2 (ja) | 2012-08-24 | 2012-08-24 | センサ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014044048A JP2014044048A (ja) | 2014-03-13 |
JP5841918B2 true JP5841918B2 (ja) | 2016-01-13 |
Family
ID=50149804
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012184849A Expired - Fee Related JP5841918B2 (ja) | 2012-08-24 | 2012-08-24 | センサ装置 |
Country Status (2)
Country | Link |
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JP (1) | JP5841918B2 (ja) |
WO (1) | WO2014030493A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6766749B2 (ja) * | 2017-05-18 | 2020-10-14 | 株式会社豊田自動織機 | コーマ |
JP6990165B2 (ja) * | 2018-12-05 | 2022-01-12 | 日立Astemo株式会社 | 熱式センサおよびその製造方法並びに半導体装置 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5683192B2 (ja) * | 2010-09-30 | 2015-03-11 | 日立オートモティブシステムズ株式会社 | 熱式流量センサ |
JP5152292B2 (ja) * | 2010-10-06 | 2013-02-27 | 株式会社デンソー | 流量計測装置 |
-
2012
- 2012-08-24 JP JP2012184849A patent/JP5841918B2/ja not_active Expired - Fee Related
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2013
- 2013-07-26 WO PCT/JP2013/070268 patent/WO2014030493A1/ja active Application Filing
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Publication number | Publication date |
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JP2014044048A (ja) | 2014-03-13 |
WO2014030493A1 (ja) | 2014-02-27 |
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