JP5825817B2 - 固体撮像素子及び撮像装置 - Google Patents
固体撮像素子及び撮像装置 Download PDFInfo
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- JP5825817B2 JP5825817B2 JP2011082189A JP2011082189A JP5825817B2 JP 5825817 B2 JP5825817 B2 JP 5825817B2 JP 2011082189 A JP2011082189 A JP 2011082189A JP 2011082189 A JP2011082189 A JP 2011082189A JP 5825817 B2 JP5825817 B2 JP 5825817B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
- H04N25/704—Pixels specially adapted for focusing, e.g. phase difference pixel sets
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B13/00—Viewfinders; Focusing aids for cameras; Means for focusing for cameras; Autofocus systems for cameras
- G03B13/32—Means for focusing
- G03B13/34—Power focusing
- G03B13/36—Autofocus systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/60—Control of cameras or camera modules
- H04N23/67—Focus control based on electronic image sensor signals
- H04N23/672—Focus control based on electronic image sensor signals based on the phase difference signals
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Signal Processing (AREA)
- Multimedia (AREA)
- Focusing (AREA)
- Automatic Focus Adjustment (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
(i)a、b、c、dの信号を加算
(ii)a、bの信号を加算
(iii)c、dの信号を加算
図5は、図3に示す遮光部m1、m2が設けられた画素を示している。
(i)a、b、c、dの信号を加算
(ii)a、bの信号を加算
(iii)c、dの信号を加算
(iv)cまたはdの信号
図9は、図7における遮光部p1,p2が設けられた画素の瞳強度分布を示している。以下では(A)画素について説明を行うが、(B)画素は(A)画素に対して遮光部の開口が左右(ここではX軸方向)対称なだけであるため瞳強度分布も左右対称な特性となる。また、図8に示す遮光部p3,p4については、瞳強度は図9とは異なるものの、瞳強度分布は左右対称な特性となる。
Claims (8)
- マイクロレンズと複数の光電変換部とを有する単位画素が2次元に配列された画素群を備え、当該画素群が撮像用画素と焦点検出用画素を含む固体撮像素子であって、
前記画素群の一部に焦点検出用画素として、前記複数の光電変換部のそれぞれを部分的に遮光する遮光部を設け、
前記遮光部は、異なる形状の複数の開口を有し、当該開口は前記複数の光電変換部のうち、隣接する一対の光電変換部を部分的にまたがるように形成されることを特徴とする固体撮像素子。 - 前記焦点検出用画素には、第1ないし第4の遮光部のいずれかが設けられ、
前記第1ないし第4の各遮光部のそれぞれには、第1の開口と第2の開口が形成され、
前記第1の遮光部の第1及び第2の開口と第2の遮光部の第1及び第2の開口、並びに第3の遮光部の第1及び第2の開口と第4の遮光部の第1及び第2の開口はそれぞれ、画素中心で直交する2つの軸に対して、それぞれ線対称となるように形成されることを特徴とする請求項1に記載の固体撮像素子。 - 前記遮光部は、前記画素ごとにレイアウトされる電極により形成されることを特徴とする請求項1または2に記載の固体撮像素子。
- 請求項1ないし3のいずれか1項に記載の固体撮像素子と、
前記焦点検出用画素からの信号を用いて焦点検出を行う焦点検出手段と、
前記焦点検出手段による検出結果に応じて合焦状態になるように光学系を制御する制御手段と、を有することを特徴とする撮像装置。 - 前記焦点検出手段は、一対の前記焦点検出用画素を用いて位相差検出方式の焦点検出を行うことを特徴とする請求項4に記載の撮像装置。
- 前記焦点検出手段は、前記焦点検出用画素における前記複数の光電変換部からの信号を加算した信号を用いて焦点検出を行うことを特徴とする請求項5に記載の撮像装置。
- 前記複数の光電変換部からの信号の加算方法を変えることを特徴とする請求項6に記載の撮像装置。
- 前記撮像用画素は、被写体像を撮像した画像に視差が生じるように構成されていることを特徴とする請求項4ないし7のいずれか1項に記載の撮像装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011082189A JP5825817B2 (ja) | 2011-04-01 | 2011-04-01 | 固体撮像素子及び撮像装置 |
US13/428,515 US9025060B2 (en) | 2011-04-01 | 2012-03-23 | Solid-state image sensor having a shielding unit for shielding some of photo-electric converters and image capturing apparatus including the solid-state image sensor |
US14/685,097 US20150222834A1 (en) | 2011-04-01 | 2015-04-13 | Solid-state image sensor and image capturing apparatus |
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JP2011082189A JP5825817B2 (ja) | 2011-04-01 | 2011-04-01 | 固体撮像素子及び撮像装置 |
Publications (3)
Publication Number | Publication Date |
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JP2012215785A JP2012215785A (ja) | 2012-11-08 |
JP2012215785A5 JP2012215785A5 (ja) | 2014-05-15 |
JP5825817B2 true JP5825817B2 (ja) | 2015-12-02 |
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US (2) | US9025060B2 (ja) |
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JP5451111B2 (ja) | 2008-03-11 | 2014-03-26 | キヤノン株式会社 | 焦点検出装置およびそれを有する撮像装置 |
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JP5532599B2 (ja) * | 2008-12-17 | 2014-06-25 | 株式会社ニコン | 固体撮像素子の製造方法及び撮像装置 |
US8570427B2 (en) * | 2009-01-28 | 2013-10-29 | Nikon Corporation | Image-capturing device having focus adjustment function, image creation method including focus adjustment function, and program product for image-capturing device having focus adjustment function |
JP5229060B2 (ja) * | 2009-03-31 | 2013-07-03 | ソニー株式会社 | 撮像装置および焦点検出方法 |
JP2011176715A (ja) * | 2010-02-25 | 2011-09-08 | Nikon Corp | 裏面照射型撮像素子および撮像装置 |
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2011
- 2011-04-01 JP JP2011082189A patent/JP5825817B2/ja active Active
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2012
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US20120249846A1 (en) | 2012-10-04 |
JP2012215785A (ja) | 2012-11-08 |
US20150222834A1 (en) | 2015-08-06 |
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