JP5824189B2 - 磁気抵抗効果素子の製造システム - Google Patents
磁気抵抗効果素子の製造システム Download PDFInfo
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- JP5824189B2 JP5824189B2 JP2015531192A JP2015531192A JP5824189B2 JP 5824189 B2 JP5824189 B2 JP 5824189B2 JP 2015531192 A JP2015531192 A JP 2015531192A JP 2015531192 A JP2015531192 A JP 2015531192A JP 5824189 B2 JP5824189 B2 JP 5824189B2
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Description
Claims (1)
- 二つの磁性層の間にトンネル障壁層を配して構成される磁気抵抗効果素子の製造システムであって、
エッチングチャンバーを有し、前記エッチングチャンバー内において、基板上に、前記二つの磁性層の一方の層と、前記トンネル障壁層を構成する層と、前記二つの磁性層の他方の層と、を備えた積層体をエッチングにより複数に分離し、前記基板上に分離した複数の積層体を形成するエッチング装置と、
前記エッチングチャンバーに基板搬送室を介して接続された減圧可能な処理チャンバーを有し、前記分離した複数の積層体の側部に前記処理チャンバー内でイオンビームを照射するイオンビーム照射装置とを有し、
前記イオンビーム照射装置が、前記イオンビームの照射後に前記処理チャンバー内に酸化性ガスまたは窒化性ガスを導入するガス導入系を有する
ことを特徴とする磁気抵抗効果素子の製造システム。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015531192A JP5824189B2 (ja) | 2013-09-25 | 2014-04-18 | 磁気抵抗効果素子の製造システム |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013197982 | 2013-09-25 | ||
JP2013197982 | 2013-09-25 | ||
JP2015531192A JP5824189B2 (ja) | 2013-09-25 | 2014-04-18 | 磁気抵抗効果素子の製造システム |
PCT/JP2014/002210 WO2015045205A1 (ja) | 2013-09-25 | 2014-04-18 | 磁気抵抗効果素子の製造方法および製造システム |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015199639A Division JP6078610B2 (ja) | 2013-09-25 | 2015-10-07 | 磁気抵抗効果素子の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP5824189B2 true JP5824189B2 (ja) | 2015-11-25 |
JPWO2015045205A1 JPWO2015045205A1 (ja) | 2017-03-09 |
Family
ID=52742389
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015531192A Active JP5824189B2 (ja) | 2013-09-25 | 2014-04-18 | 磁気抵抗効果素子の製造システム |
JP2015199639A Active JP6078610B2 (ja) | 2013-09-25 | 2015-10-07 | 磁気抵抗効果素子の製造方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
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JP2015199639A Active JP6078610B2 (ja) | 2013-09-25 | 2015-10-07 | 磁気抵抗効果素子の製造方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US20160204342A1 (ja) |
JP (2) | JP5824189B2 (ja) |
KR (1) | KR101862632B1 (ja) |
TW (1) | TWI557959B (ja) |
WO (1) | WO2015045205A1 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015045205A1 (ja) | 2013-09-25 | 2015-04-02 | キヤノンアネルバ株式会社 | 磁気抵抗効果素子の製造方法および製造システム |
US9779955B2 (en) | 2016-02-25 | 2017-10-03 | Lam Research Corporation | Ion beam etching utilizing cryogenic wafer temperatures |
JP2018147916A (ja) * | 2017-03-01 | 2018-09-20 | ソニーセミコンダクタソリューションズ株式会社 | 磁気記憶素子、磁気記憶装置、電子機器、および磁気記憶素子の製造方法 |
US10522749B2 (en) * | 2017-05-15 | 2019-12-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Combined physical and chemical etch to reduce magnetic tunnel junction (MTJ) sidewall damage |
US10043851B1 (en) * | 2017-08-03 | 2018-08-07 | Headway Technologies, Inc. | Etch selectivity by introducing oxidants to noble gas during physical magnetic tunnel junction (MTJ) etching |
EP3996158A3 (en) | 2017-08-29 | 2022-08-17 | Everspin Technologies, Inc. | Method of etching magnetoresistive stack |
JP6628015B2 (ja) * | 2017-10-16 | 2020-01-08 | Tdk株式会社 | トンネル磁気抵抗効果素子、磁気メモリ、及び内蔵型メモリ |
US11195703B2 (en) | 2018-12-07 | 2021-12-07 | Applied Materials, Inc. | Apparatus and techniques for angled etching using multielectrode extraction source |
US11715621B2 (en) | 2018-12-17 | 2023-08-01 | Applied Materials, Inc. | Scanned angled etching apparatus and techniques providing separate co-linear radicals and ions |
CN113383435A (zh) * | 2019-02-01 | 2021-09-10 | 朗姆研究公司 | 利用气体处理及脉冲化的离子束蚀刻 |
CN113519071A (zh) | 2019-02-28 | 2021-10-19 | 朗姆研究公司 | 利用侧壁清洁的离子束蚀刻 |
US20210234091A1 (en) * | 2020-01-24 | 2021-07-29 | Applied Materials, Inc. | Magnetic memory and method of fabrication |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH04254328A (ja) * | 1991-02-06 | 1992-09-09 | Fujitsu Ltd | 半導体装置の製造方法 |
JP2009302550A (ja) * | 2006-09-13 | 2009-12-24 | Canon Anelva Corp | 磁気抵抗効果素子の製造装置 |
JP2010186869A (ja) * | 2009-02-12 | 2010-08-26 | Toshiba Corp | 磁気抵抗効果素子及びその製造方法 |
Family Cites Families (19)
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JP3603062B2 (ja) * | 2000-09-06 | 2004-12-15 | 松下電器産業株式会社 | 磁気抵抗効果素子とその製造方法、およびこれを用いた磁気デバイス |
JP3558996B2 (ja) * | 2001-03-30 | 2004-08-25 | 株式会社東芝 | 磁気抵抗効果素子、磁気ヘッド、磁気再生装置及び磁気記憶装置 |
JP3939519B2 (ja) * | 2001-09-14 | 2007-07-04 | アルプス電気株式会社 | 磁気検出素子及びその製造方法 |
US7659209B2 (en) | 2001-11-14 | 2010-02-09 | Canon Anelva Corporation | Barrier metal film production method |
US20030091739A1 (en) | 2001-11-14 | 2003-05-15 | Hitoshi Sakamoto | Barrier metal film production apparatus, barrier metal film production method, metal film production method, and metal film production apparatus |
FR2884916B1 (fr) * | 2005-04-25 | 2007-06-22 | Commissariat Energie Atomique | Detecteur optique ultrasensible a grande resolution temporelle, utilisant un plasmon de surface |
WO2007032379A1 (ja) * | 2005-09-13 | 2007-03-22 | Canon Anelva Corporation | 磁気抵抗効果素子の製造方法及び製造装置 |
JP2008052840A (ja) * | 2006-08-25 | 2008-03-06 | Hitachi Global Storage Technologies Netherlands Bv | 磁気ヘッドスライダの製造方法 |
US8472149B2 (en) * | 2007-10-01 | 2013-06-25 | Tdk Corporation | CPP type magneto-resistive effect device and magnetic disk system |
US7863582B2 (en) * | 2008-01-25 | 2011-01-04 | Valery Godyak | Ion-beam source |
US8871645B2 (en) | 2008-09-11 | 2014-10-28 | Applied Materials, Inc. | Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof |
US20110061810A1 (en) | 2009-09-11 | 2011-03-17 | Applied Materials, Inc. | Apparatus and Methods for Cyclical Oxidation and Etching |
US20110065276A1 (en) | 2009-09-11 | 2011-03-17 | Applied Materials, Inc. | Apparatus and Methods for Cyclical Oxidation and Etching |
US20110061812A1 (en) * | 2009-09-11 | 2011-03-17 | Applied Materials, Inc. | Apparatus and Methods for Cyclical Oxidation and Etching |
JP5601181B2 (ja) * | 2010-12-02 | 2014-10-08 | 富士通セミコンダクター株式会社 | 磁気抵抗効果素子及びその製造方法 |
US8970213B2 (en) | 2011-06-24 | 2015-03-03 | Canon Anelva Corporation | Method for manufacturing magnetoresistance effect element |
KR101566863B1 (ko) * | 2011-08-25 | 2015-11-06 | 캐논 아네르바 가부시키가이샤 | 자기저항 소자의 제조 방법 및 자기저항 필름의 가공 방법 |
JP2013247198A (ja) * | 2012-05-24 | 2013-12-09 | Toshiba Corp | 磁気抵抗素子及びその製造方法 |
WO2015045205A1 (ja) | 2013-09-25 | 2015-04-02 | キヤノンアネルバ株式会社 | 磁気抵抗効果素子の製造方法および製造システム |
-
2014
- 2014-04-18 WO PCT/JP2014/002210 patent/WO2015045205A1/ja active Application Filing
- 2014-04-18 JP JP2015531192A patent/JP5824189B2/ja active Active
- 2014-04-18 KR KR1020167008946A patent/KR101862632B1/ko active IP Right Grant
- 2014-08-29 TW TW103129887A patent/TWI557959B/zh active
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2015
- 2015-10-07 JP JP2015199639A patent/JP6078610B2/ja active Active
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2016
- 2016-03-21 US US15/075,409 patent/US20160204342A1/en not_active Abandoned
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2017
- 2017-05-15 US US15/595,103 patent/US10157961B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04254328A (ja) * | 1991-02-06 | 1992-09-09 | Fujitsu Ltd | 半導体装置の製造方法 |
JP2009302550A (ja) * | 2006-09-13 | 2009-12-24 | Canon Anelva Corp | 磁気抵抗効果素子の製造装置 |
JP2010186869A (ja) * | 2009-02-12 | 2010-08-26 | Toshiba Corp | 磁気抵抗効果素子及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
TWI557959B (zh) | 2016-11-11 |
KR20160055187A (ko) | 2016-05-17 |
US10157961B2 (en) | 2018-12-18 |
KR101862632B1 (ko) | 2018-05-31 |
US20160204342A1 (en) | 2016-07-14 |
JP2016012738A (ja) | 2016-01-21 |
US20170250221A1 (en) | 2017-08-31 |
JP6078610B2 (ja) | 2017-02-08 |
TW201526321A (zh) | 2015-07-01 |
WO2015045205A1 (ja) | 2015-04-02 |
JPWO2015045205A1 (ja) | 2017-03-09 |
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