JP5814334B2 - 有機発光表示装置及びその駆動方法 - Google Patents
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- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
Description
200:パネル駆動部
210:劣化補償部
211:劣化補償ゲイン値算出部
213:データ変調部
214:劣化加重値反映部
215:データ累積部
220:タイミング制御部
230:ゲート駆動回路部
240:データ駆動回路部
Claims (14)
- データ電圧に基づいたデータ電流によって発光する有機発光素子を有する複数のサブ画素を含むように構成された表示パネル;
上記各サブ画素に表示されたデータを累積して格納するように構成されたメモリ;
複数の劣化補償時点、及び当該複数の劣化補償時点のそれぞれに対する基準値を設定し、当該各劣化補償時点に対する基準値と上記メモリに格納された各サブ画素の累積データとに基づいて、上記劣化補償時点ごとに各サブ画素の劣化補償ゲイン値を算出するように構成された劣化補償ゲイン値算出部;
上記劣化補償ゲイン値を、上記各サブ画素に供給される入力データに反映させ、変調データを生成するように構成されたデータ変調部;及び
上記変調データを上記データ電圧に変換するとともに上記変調データを該当サブ画素の累積データに累積するように構成されたデータ累積部を含み、
上記劣化補償ゲイン値算出部は、上記各サブ画素の累積データが上記基準値と同じかあるいはより大きい場合、上記各サブ画素の劣化補償ゲイン値を算出する、有機発光表示装置。 - 上記劣化補償ゲイン値算出部は、上記劣化補償時点ごとに、上記各サブ画素の輝度を初期輝度に増加させるための劣化補償ゲイン値を算出する、請求項1に記載の有機発光表示装置。
- データ電圧に基づいたデータ電流によって発光する有機発光素子を有する複数のサブ画素を含むように構成された表示パネル;
上記各サブ画素に表示されたデータを累積して格納するように構成されたメモリ;
複数の劣化補償時点、及び当該複数の劣化補償時点のそれぞれに対する基準値を設定し、当該各劣化補償時点に対する基準値と上記メモリに格納された各サブ画素の累積データとに基づいて、上記劣化補償時点ごとに各サブ画素の劣化補償ゲイン値を算出するように構成された劣化補償ゲイン値算出部;
上記劣化補償ゲイン値を、上記各サブ画素に供給される入力データに反映させ、変調データを生成するように構成されたデータ変調部;及び
上記変調データを上記データ電圧に変換するとともに上記変調データを該当サブ画素の累積データに累積するように構成されたデータ累積部を含み、
上記劣化補償ゲイン値算出部は、上記メモリに格納された全てのサブ画素の累積データのうちの最大値を選択し、劣化補償時点ごとに、上記各サブ画素の輝度を、上記最大値を有するサブ画素の輝度に減少させるための劣化補償ゲイン値を算出し、
上記劣化補償ゲイン値算出部は、上記最大値が上記基準値と同じかあるいはより大きい場合、上記最大値と各サブ画素の累積データとの間の差値に基づいて、上記各サブ画素の劣化補償ゲイン値を算出する、有機発光表示装置。 - データ電圧に基づいたデータ電流によって発光する有機発光素子を有する複数のサブ画素を含むように構成された表示パネル;
上記各サブ画素に表示されたデータを累積して格納するように構成されたメモリ;
複数の劣化補償時点、及び当該複数の劣化補償時点のそれぞれに対する基準値を設定し、当該各劣化補償時点に対する基準値と上記メモリに格納された各サブ画素の累積データとに基づいて、上記劣化補償時点ごとに各サブ画素の劣化補償ゲイン値を算出するように構成された劣化補償ゲイン値算出部;
上記劣化補償ゲイン値を、上記各サブ画素に供給される入力データに反映させ、変調データを生成するように構成されたデータ変調部;及び
上記変調データを上記データ電圧に変換するとともに上記変調データを該当サブ画素の累積データに累積するように構成されたデータ累積部を含み、
上記劣化補償ゲイン値算出部は、上記メモリに格納された各サブ画素の累積データを用いて、劣化補償基準データを算出し、劣化補償時点ごとに、上記各サブ画素の輝度を、上記劣化補償基準データを有するサブ画素の輝度に増加させる、または減少させるための劣化補償ゲイン値を算出し、
上記劣化補償ゲイン値算出部は、全てのサブ画素の累積データのうちの最大値と最小値の平均値、または全てのサブ画素の累積データの平均値を上記劣化補償基準データとして算出し、
上記劣化補償ゲイン値算出部は、上記劣化補償基準データが上記基準値と同じかあるいはより大きい場合、上記劣化補償基準データと各サブ画素の累積データとの間の差値に基づいて、各サブ画素の劣化補償ゲイン値を算出する、有機発光表示装置。 - 上記劣化補償ゲイン値算出部は、上記サブ画素の累積データが上記劣化補償基準データより小さい場合、1未満の実数値を有する劣化補償ゲイン値を算出し、
上記劣化補償ゲイン値算出部は、上記サブ画素の累積データが上記劣化補償基準データより大きい場合、1以上の実数値を有する劣化補償ゲイン値を算出する、請求項4に記載の有機発光表示装置。 - 上記各サブ画素の変調データの階調値に基づいて、劣化加重値を算出し、当該算出された劣化加重値を該当サブ画素の変調データに反映させて、当該変調データを補正するように構成された劣化加重値反映部をさらに含み、
上記データ累積部は、上記補正された変調データを上記該当サブ画素の累積データに累積する、請求項1−5のうちいずれか一項に記載の有機発光表示装置。 - 上記劣化加重値反映部は、上記劣化加重値を、同一の累積データを有するサブ画素の劣化特性が同一となるように上記変調データの階調値に応じてそれぞれ異なるように設定する、請求項6に記載の有機発光表示装置。
- データ電圧に基づいたデータ電流によって発光する有機発光素子を有する複数のサブ画素を含む表示パネルを有する有機発光表示装置の駆動方法において、
複数の劣化補償時点、及び当該複数の劣化補償時点のそれぞれに対する基準値を設定する段階;
当該各劣化補償時点に対する基準値とメモリに格納された各サブ画素の累積データとに基づいて、上記劣化補償時点ごとに各サブ画素の劣化補償ゲイン値を算出する段階;
上記劣化補償ゲイン値を、上記各サブ画素に供給される入力データに反映させ、変調データを生成する段階;
上記各サブ画素の変調データを該当サブ画素の累積データに累積する段階;及び
上記各サブ画素の変調データを上記データ電圧に変換して、当該データ電圧を上記各サブ画素に供給する段階を含み、
上記劣化補償ゲイン値を算出する段階は、各サブ画素の累積データが上記基準値と同じかあるいはより大きい場合、上記各サブ画素の劣化補償ゲイン値を算出する段階を含む、有機発光表示装置の駆動方法。 - 上記劣化補償ゲイン値を算出する段階は、上記劣化補償時点ごとに、上記各サブ画素の輝度を初期輝度に増加させるための劣化補償ゲイン値を算出する段階を含む、請求項8に記載の有機発光表示装置の駆動方法。
- データ電圧に基づいたデータ電流によって発光する有機発光素子を有する複数のサブ画素を含む表示パネルを有する有機発光表示装置の駆動方法において、
複数の劣化補償時点、及び当該複数の劣化補償時点のそれぞれに対する基準値を設定する段階;
当該各劣化補償時点に対する基準値とメモリに格納された各サブ画素の累積データとに基づいて、上記劣化補償時点ごとに各サブ画素の劣化補償ゲイン値を算出する段階;
上記劣化補償ゲイン値を、上記各サブ画素に供給される入力データに反映させ、変調データを生成する段階;
上記各サブ画素の変調データを該当サブ画素の累積データに累積する段階;及び
上記各サブ画素の変調データを上記データ電圧に変換して、当該データ電圧を上記各サブ画素に供給する段階を含み、
上記劣化補償ゲイン値を算出する段階は、
劣化補償時点ごとに、上記メモリに格納された全てのサブ画素の累積データのうちの最大値を選択する段階;及び
上記各サブ画素の輝度を、上記最大値を有するサブ画素の輝度に減少させるための劣化補償ゲイン値を算出する段階を含み、
上記劣化補償ゲイン値を算出する段階は、上記最大値が上記基準値と同じかあるいはより大きい場合、上記最大値と各サブ画素の累積データとの間の差値に基づいて、上記各サブ画素の劣化補償ゲイン値を算出する段階を含む、有機発光表示装置の駆動方法。 - データ電圧に基づいたデータ電流によって発光する有機発光素子を有する複数のサブ画素を含む表示パネルを有する有機発光表示装置の駆動方法において、
複数の劣化補償時点、及び当該複数の劣化補償時点のそれぞれに対する基準値を設定する段階;
当該各劣化補償時点に対する基準値とメモリに格納された各サブ画素の累積データとに基づいて、上記劣化補償時点ごとに各サブ画素の劣化補償ゲイン値を算出する段階;
上記劣化補償ゲイン値を、上記各サブ画素に供給される入力データに反映させ、変調データを生成する段階;
上記各サブ画素の変調データを該当サブ画素の累積データに累積する段階;及び
上記各サブ画素の変調データを上記データ電圧に変換して、当該データ電圧を上記各サブ画素に供給する段階を含み、
上記劣化補償ゲイン値を算出する段階は、
上記メモリに格納された各サブ画素の累積データを用いて複数の補償時点ごとに劣化補償基準データを算出する段階;及び
上記各サブ画素の輝度を、上記劣化補償基準データを有するサブ画素の輝度に増加させる、または減少させるための劣化補償ゲイン値を算出する段階を含み、
上記劣化補償ゲイン値を算出する段階は、
全てのサブ画素の累積データのうちの最大値と最小値の平均値、または全てのサブ画素の累積データの平均値を上記劣化補償基準データとして算出する段階;及び
上記劣化補償基準データが上記基準値と同じかあるいはより大きい場合、上記劣化補償基準データと各サブ画素の累積データとの間の差値に基づいて、各サブ画素の劣化補償ゲイン値を算出する段階を含む、有機発光表示装置の駆動方法。 - 上記劣化補償ゲイン値を算出する段階は、
上記サブ画素の累積データが上記劣化補償基準データより小さい場合、1未満の実数値を有する劣化補償ゲイン値を算出する段階;及び
上記サブ画素の累積データが上記劣化補償基準データより大きい場合、1以上の実数値を有する劣化補償ゲイン値を算出する段階をさらに含む、請求項11に記載の有機発光表示装置の駆動方法。 - 上記各サブ画素の変調データの階調値に基づいて、劣化加重値を算出する段階;及び
当該算出された劣化加重値を該当サブ画素の変調データに反映させて、当該変調データを補正する段階をさらに含み、
上記補正された変調データと上記該当サブ画素の累積データが、上記メモリに累積して格納される、請求項8−12のうちいずれか一項に記載の有機発光表示装置の駆動方法。 - 上記劣化加重値を算出する段階は、上記劣化加重値を、同一の累積データを有するサブ画素の劣化特性が同一となるように上記変調データの階調値に応じてそれぞれ異なるように設定する段階を含む、請求項13に記載の有機発光表示装置の駆動方法。
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