JP5813596B2 - 不揮発性半導体記憶装置 - Google Patents
不揮発性半導体記憶装置 Download PDFInfo
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- JP5813596B2 JP5813596B2 JP2012178069A JP2012178069A JP5813596B2 JP 5813596 B2 JP5813596 B2 JP 5813596B2 JP 2012178069 A JP2012178069 A JP 2012178069A JP 2012178069 A JP2012178069 A JP 2012178069A JP 5813596 B2 JP5813596 B2 JP 5813596B2
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- Prior art keywords
- heat insulating
- mram chip
- memory device
- semiconductor memory
- layer
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- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
まず、磁気ランダムアクセスメモリ(MRAM)において、参照層および記憶層の磁化方向の熱ゆらぎが問題となる状況を検証すると、その原因の1つは、MRAMチップの実装工程にあることが分かった。例えば、MRAMチップを配線基板に実装する際には、半田を溶融するためのリフロー工程のため、MRAMチップに250℃以上の温度が印加される。
以下、上述の基本思想を具現化したいくつかの実施例を説明する。
図2は、不揮発性半導体記憶装置の第1の実施例を示している。
図3は、不揮発性半導体記憶装置の第2の実施例を示している。
図4は、不揮発性半導体記憶装置の第3の実施例を示している。
図5は、不揮発性半導体記憶装置の第4の実施例を示している。
上述の第1及び第2の実施例の変形例として、断熱材13a,13a−1,13a−2内に、磁気シールド効果を有する金属粒子又は磁性粒子を含ませてもよい。また、これに代えて、又は、これと共に、モールド材13b内にも、磁気シールド効果を有する金属粒子又は磁性粒子を含ませてもよい。
第1乃至第4の実施例に係わる不揮発性半導体記憶装置の製造方法を説明する。
まず、図6に示すように、例えば、導電ペースト15により、MRAMチップ11を、Cu(銅)−リードフレームのダイパッド14上に固定する。次に、図7に示すように、ボンディングワイヤ16により、MRAMチップ11の外部電極(パッド)18とリードフレームとを接続する。
まず、図11に示すように、例えば、MRAMチップ11を、フリップチップ接続により、配線基板19の第1の面上に固定する。次に、図12に示すように、MRAMチップ11と配線基板19との間に、断熱材(例えば、発泡プラスチック)13a−1を充填する。断熱材13a−1は、電極20の間に満たされる。
まず、図16に示すように、例えば、断熱材(例えば、断熱シート)13a−1を、配線基板19の第1の面上に配置する。また、この断熱材13a−1上に、MRAMチップ11を配置する。次に、図17に示すように、ボンディングワイヤ16により、MRAMチップ11の外部電極(パッド)18と配線基板19の第1の面上の導電線21とを接続する。
まず、図20に示すように、例えば、断熱材(例えば、断熱シート)13a−1を、配線基板19の第1の面上に配置する。断熱材13a−1は、所定の位置に開口部を有する。また、例えば、MRAMチップ11を、フリップチップ接続により、配線基板19の第1の面上に固定する。この時、図21に示すように、MRAMチップ11の電極20は、断熱材13a−1の開口部Xを介して、配線基板19の第1の面上の導電線21に接続される。
MRAMチップ内の磁気ランダムアクセスメモリの構造例を説明する。
同図において、図25に示す要素と同じ要素には同じ符号を付してある。
同図において、図25に示す要素と同じ要素には同じ符号を付してある。
本実施例は、MRAMチップを備える不揮発性半導体記憶装置について説明したが、熱ゆらぎが問題となるような他の半導体チップ(例えば、CMOSセンサー、MEMSセンサー、温度・圧力センサー等)などに上述の基本思想を適用することも可能である。
実施形態によれば、書き込み電流の低減と熱的安定性の向上を図ることができる。
Claims (7)
- 磁化方向が不変の参照層、磁化方向が可変の記憶層、及び、これらの間の非磁性層を有する磁気抵抗効果素子を備えるMRAMチップと、
前記MRAMチップを覆う断熱領域及び前記断熱領域を覆うモールド材を備える外囲器とを具備し、
前記断熱領域は、0.3W/mK以下の熱伝導率を有し、
前記断熱領域は、前記MRAMチップの下面を覆う第1の領域と、前記MRAMチップの上面を覆う第2の領域とを備え、
前記第1及び第2の領域は、互いに異なる材料を有する
不揮発性半導体記憶装置。 - 磁化方向が不変の参照層、磁化方向が可変の記憶層、及び、これらの間の非磁性層を有する磁気抵抗効果素子を備えるMRAMチップと、
前記MRAMチップの一部または全部を覆い、断熱領域を有する外囲器を具備し、
前記断熱領域は、前記MRAMチップの下面を覆う第1の領域と、前記MRAMチップの上面を覆う第2の領域を備え、
前記第1及び第2の領域は、互いに異なる材料を有する不揮発性半導体記憶装置。 - 前記断熱領域は、0.3W/mK以下の熱伝導率を有する請求項2に記載の不揮発性半導体記憶装置。
- 前記外囲器は、前記断熱領域を覆うモールド材をさらに備える請求項2に記載の不揮発性半導体記憶装置。
- 前記モールド材は、金属粒子又は磁性粒子を含む請求項4に記載の不揮発性半導体記憶装置。
- 前記断熱領域は、金属粒子または磁性粒子を含む請求項2に記載の不揮発性半導体記憶装置。
- 請求項1に記載の不揮発性半導体記憶装置の実装方法において、
前記記憶層の前記磁化方向が予め決められた向きに設定された前記MRAMチップを覆う前記外囲器を配線基板上に搭載する工程と、
前記外囲器が搭載された前記配線基板をリフロー炉内に配置する工程と
を具備する不揮発性半導体記憶装置の実装方法。
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DE102015206299B4 (de) * | 2014-04-24 | 2023-08-31 | Continental Automotive Technologies GmbH | Über Leiterplatte auf Leadframe verschaltete Sensorschaltung |
WO2016174509A1 (en) * | 2015-04-27 | 2016-11-03 | Kabushiki Kaisha Toshiba | Magnetic memory device |
KR102354370B1 (ko) | 2015-04-29 | 2022-01-21 | 삼성전자주식회사 | 쉴딩 구조물을 포함하는 자기 저항 칩 패키지 |
JP2017224663A (ja) * | 2016-06-14 | 2017-12-21 | Tdk株式会社 | 磁気記録装置の製造方法および磁気記録装置 |
US20190178904A1 (en) * | 2017-12-11 | 2019-06-13 | Honeywell International Inc. | Device, system and method for stress-sensitive component isolation in severe environments |
US11139341B2 (en) | 2018-06-18 | 2021-10-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Protection of MRAM from external magnetic field using magnetic-field-shielding structure |
US11088083B2 (en) * | 2018-06-29 | 2021-08-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | DC and AC magnetic field protection for MRAM device using magnetic-field-shielding structure |
KR20230122020A (ko) | 2020-12-22 | 2023-08-22 | 가부시끼가이샤 레조낙 | 반도체 장치의 제조 방법 |
KR20230122021A (ko) | 2020-12-22 | 2023-08-22 | 가부시끼가이샤 레조낙 | 조성물 및 시트 |
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JPH01101655A (ja) * | 1987-10-15 | 1989-04-19 | Nec Corp | 半導体装置のパッケージ |
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JP5470602B2 (ja) * | 2009-04-01 | 2014-04-16 | ルネサスエレクトロニクス株式会社 | 磁気記憶装置 |
JPWO2011046091A1 (ja) * | 2009-10-13 | 2013-03-07 | 日本電気株式会社 | 磁性体装置 |
CN102339763B (zh) * | 2010-07-21 | 2016-01-27 | 飞思卡尔半导体公司 | 装配集成电路器件的方法 |
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