JP5809144B2 - 基板処理方法および基板処理装置 - Google Patents
基板処理方法および基板処理装置 Download PDFInfo
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- 238000012545 processing Methods 0.000 title claims description 210
- 239000000758 substrate Substances 0.000 title claims description 70
- 238000003672 processing method Methods 0.000 title claims description 16
- 239000007789 gas Substances 0.000 claims description 102
- 238000000034 method Methods 0.000 claims description 86
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 77
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 75
- 230000008569 process Effects 0.000 claims description 67
- 239000007795 chemical reaction product Substances 0.000 claims description 65
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 35
- 230000007246 mechanism Effects 0.000 claims description 34
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 32
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 32
- 239000011261 inert gas Substances 0.000 claims description 11
- 230000008859 change Effects 0.000 claims description 10
- 230000008016 vaporization Effects 0.000 claims description 10
- 238000007599 discharging Methods 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 113
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 48
- 238000012546 transfer Methods 0.000 description 32
- 229910052786 argon Inorganic materials 0.000 description 24
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 23
- 229910001873 dinitrogen Inorganic materials 0.000 description 23
- 230000000052 comparative effect Effects 0.000 description 19
- 238000005530 etching Methods 0.000 description 13
- 239000000126 substance Substances 0.000 description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 10
- 229920005591 polysilicon Polymers 0.000 description 10
- 239000002245 particle Substances 0.000 description 9
- -1 ammonium fluorosilicate Chemical compound 0.000 description 8
- 230000001131 transforming effect Effects 0.000 description 6
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- 229910052736 halogen Inorganic materials 0.000 description 4
- 150000002367 halogens Chemical class 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
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- 230000004075 alteration Effects 0.000 description 3
- 238000012993 chemical processing Methods 0.000 description 3
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- 238000001020 plasma etching Methods 0.000 description 3
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- 230000008901 benefit Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
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- 238000005498 polishing Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
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- 230000007723 transport mechanism Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Description
まず、COR処理によってシリコン酸化膜から生成される反応生成物であるフルオロケイ酸アンモニウム((NH4)2SiF6)の昇華温度を調べた。N2雰囲気の大気圧下でフルオロケイ酸アンモニウムを加熱し、重量変化を調べたところ図6の結果を得た。約90℃以上であれば、フルオロケイ酸アンモニウムが昇華されることが分かった。
次に、第1の工程と第2の工程を交互に7回繰り返して行い、その後、種々の方法で排気処理工程を行って処理室内のガスを強制的に排気した。その結果を図12に示す。
ウェハを1枚処理する毎に、処理室内を30秒排気して0mTorrに減圧。
ウェハを5枚処理する毎に、処理室内にアルゴンガスを1000sccm供給し、窒素ガスを1000sccm供給して30秒間パージ。
ウェハを1枚処理する毎に、処理室内にアルゴンガスを1000sccm供給し、窒素ガスを1000sccm供給して5分間パージ。
ウェハを1枚処理する毎に、処理室内にアルゴンガスと窒素ガスをいずれも1000sccm供給しながら、処理室内を5秒排気して0mTorrに減圧。
ウェハを1枚処理する毎に、処理室内にアルゴンガスと窒素ガスをいずれも100sccm供給しながら、処理室内を5秒排気して0mTorrに減圧。
ウェハを1枚処理する毎に、処理室内にアルゴンガスを1000sccm、窒素ガスを1000sccm供給し、処理室内を0mTorrに保つ15秒間の第3の工程と、処理室21内の圧力を0mTorrに減圧する10秒間の第4の工程を、交互に10回繰り返した。
ウェハを1枚処理する毎に、処理室内にアルゴンガスを1000sccm、窒素ガスを1000sccm供給し、処理室内を0mTorrに保つ3秒間の第3の工程と、処理室21内の圧力を0mTorrに減圧する5秒間の第4の工程を、交互に10回繰り返した。
1 処理システム
2 搬入出部
3 ロードロック室
4 COR処理装置
5 制御部
5a 演算部
5b 入出力部
5c 記録媒体
10 第一のウェハ搬送機構
12 搬送室
11a、11b 搬送アーム
13 載置台
13a キャリア
14 オリエンタ
16 ゲートバルブ
17 第二のウェハ搬送機構
17a 搬送アーム17a
21 処理室
30 チャンバー
31 載置台
32 ガス供給機構
33 排気機構
35 搬入出口
40 温度調節部材
45 シャワーヘッド
46 フッ化水素ガスの供給源
47 アンモニアガスの供給源
48 アルゴンガスの供給源
49 窒素ガスの供給源
51、53、55、57 流量調整弁
60 排気路
61 開閉弁
62 排気ポンプ
100 単結晶シリコン基板
101 シリコン酸化膜
102 ポリシリコン膜
103 ゲート絶縁膜
104 フローティングゲート
105 溝
106 シリコン酸化膜
107 側壁の一部
108 ONO絶縁膜
109 ポリシリコン膜(コントロールゲート)
Claims (14)
- 処理室内に収納した基板表面のSi系膜を除去する基板処理方法であって、
前記処理室内において、フッ化水素ガスとアンモニアガスによって、基板表面のSi系膜が反応生成物に変質される第1の工程と、
前記第1の工程よりも減圧された前記処理室内において、前記反応生成物が気化される第2の工程が行われ、
前記第1の工程と前記第2の工程が、2回以上繰り返され、
前記第1の工程と前記第2の工程において、基板の温度が前記反応生成物の昇華し始める温度以上にされ、
前記第1の工程と前記第2の工程において、基板の温度が変化しないことを特徴とする、基板処理方法。 - 前記第1の工程と前記第2の工程において、基板の温度が90℃以上にされることを特徴とする、請求項1に記載の基板処理方法。
- 基板表面のSi系膜が除去されることにより、基板表面において反応生成物に変質させられない膜が突出させられることを特徴とする、請求項1に記載の基板処理方法。
- 前記Si系膜がシリコン酸化膜であり、前記反応生成物に変質させられない膜がシリコン膜であることを特徴とする、請求項3に記載の基板処理方法。
- 前記第1の工程と前記第2の工程を、交互に2回以上行う除去工程を有し、
前記除去工程が前記処理室内で複数回繰り返し行われ、かつ、前記除去工程と前記除去工程との間に、前記処理室内から前記反応生成物を排出させる排気処理工程が行われ、
前記排気処理工程では、前記処理室内に不活性ガスを供給する第3の工程と、
前記処理室内を排気する第4の工程が、交互に2回以上行われることを特徴とする、請求項1に記載の基板処理方法。 - 前記第3の工程と前記第4の工程では、前記処理室内は前記反応生成物を気化させることができる圧力にされることを特徴とする、請求項5に記載の基板処理方法。
- 前記排気処理工程は、基板表面のSi系膜を除去する基板処理の最後に行われることを特徴とする、請求項5に記載の基板処理方法。
- 前記Si系膜は、シリコン酸化膜または窒化シリコン膜である、請求項1に記載の基板処理方法。
- 処理室内に収納した基板表面のSi系膜を除去する基板処理装置であって、
前記処理室内にフッ化水素ガスとアンモニアガスを供給するガス供給機構と、前記処理室内に収納した基板を温度調節する温度調節部材と、前記処理室内を排気する排気機構と、これらガス供給機構、温度調節部材および排気機構を制御する制御部を有し、
前記制御部の制御により、前記処理室内において、フッ化水素ガスとアンモニアガスによって、基板表面のSi系膜が反応生成物に変質される第1の工程と、前記第1の工程よりも減圧された前記処理室内において、前記反応生成物が気化される第2の工程が行われ、
前記第1の工程と前記第2の工程が、2回以上繰り返され、
前記第1の工程と前記第2の工程において、基板の温度が前記反応生成物の昇華し始める温度以上にされ、
前記第1の工程と前記第2の工程において、基板の温度が変化しないことを特徴とする、基板処理装置。 - 前記第1の工程と前記第2の工程において、基板の温度が90℃以上にされることを特徴とする、請求項9に記載の基板処理装置。
- 前記制御部の制御により、前記第1の工程と前記第2の工程を、交互に2回以上行う除去工程が行われ、
前記除去工程が前記処理室内で複数回繰り返し行われ、かつ、前記除去工程と前記除去工程との間に、前記処理室内から前記反応生成物を排出させる排気処理工程が行われ、
前記排気処理工程では、前記処理室内に不活性ガスを供給する第3の工程と、前記処理室内を排気する第4の工程が、交互に2回以上行われることを特徴とする、請求項9に記載の基板処理装置。 - 前記制御部の制御により、前記第3の工程と前記第4の工程では、前記処理室内は前記反応生成物を気化させることができる圧力にされることを特徴とする、請求項11に記載の基板処理装置。
- 前記制御部の制御により、前記排気処理工程は、基板表面のSi系膜を除去する基板処理の最後に行われることを特徴とする、請求項11に記載の基板処理装置。
- 前記Si系膜は、シリコン酸化膜または窒化シリコン膜である、請求項9に記載の基板処理装置。
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