JP5799570B2 - 感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法 - Google Patents
感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法 Download PDFInfo
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- JP5799570B2 JP5799570B2 JP2011103532A JP2011103532A JP5799570B2 JP 5799570 B2 JP5799570 B2 JP 5799570B2 JP 2011103532 A JP2011103532 A JP 2011103532A JP 2011103532 A JP2011103532 A JP 2011103532A JP 5799570 B2 JP5799570 B2 JP 5799570B2
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- Prior art keywords
- phenyl
- photosensitive layer
- pyrazoline
- support film
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000000034 method Methods 0.000 title claims description 50
- 238000004519 manufacturing process Methods 0.000 title claims description 24
- -1 pyrazoline compound Chemical class 0.000 claims description 81
- 125000004432 carbon atom Chemical group C* 0.000 claims description 47
- 239000002245 particle Substances 0.000 claims description 45
- 150000001875 compounds Chemical class 0.000 claims description 40
- 229920000642 polymer Polymers 0.000 claims description 40
- 239000011230 binding agent Substances 0.000 claims description 38
- 230000001681 protective effect Effects 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 30
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 22
- 125000000217 alkyl group Chemical group 0.000 claims description 20
- 238000007747 plating Methods 0.000 claims description 20
- 239000000539 dimer Substances 0.000 claims description 19
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 19
- 239000011342 resin composition Substances 0.000 claims description 19
- 238000005530 etching Methods 0.000 claims description 18
- 239000003999 initiator Substances 0.000 claims description 18
- 238000002835 absorbance Methods 0.000 claims description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 16
- 239000001301 oxygen Substances 0.000 claims description 16
- 229910052760 oxygen Inorganic materials 0.000 claims description 16
- 125000005843 halogen group Chemical group 0.000 claims description 13
- 125000003545 alkoxy group Chemical group 0.000 claims description 11
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 10
- 230000035699 permeability Effects 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 238000010030 laminating Methods 0.000 claims description 7
- RCRZMOVRQCBJGK-UHFFFAOYSA-N 3-(4-tert-butylphenyl)-5-(4-methoxyphenyl)-2-phenyl-1,3-dihydropyrazole Chemical compound C1=CC(OC)=CC=C1C1=CC(C=2C=CC(=CC=2)C(C)(C)C)N(C=2C=CC=CC=2)N1 RCRZMOVRQCBJGK-UHFFFAOYSA-N 0.000 claims description 5
- 125000002947 alkylene group Chemical group 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims description 3
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 claims description 3
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 149
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 86
- 229940048053 acrylate Drugs 0.000 description 60
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 57
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 44
- 239000001294 propane Substances 0.000 description 43
- 239000010419 fine particle Substances 0.000 description 40
- 238000011161 development Methods 0.000 description 33
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- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 27
- 239000000243 solution Substances 0.000 description 27
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 26
- 206010034972 Photosensitivity reaction Diseases 0.000 description 18
- 230000007423 decrease Effects 0.000 description 18
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- 125000004182 2-chlorophenyl group Chemical group [H]C1=C([H])C(Cl)=C(*)C([H])=C1[H] 0.000 description 14
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 14
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 14
- 125000001424 substituent group Chemical group 0.000 description 14
- 239000004471 Glycine Substances 0.000 description 13
- 150000002460 imidazoles Chemical class 0.000 description 12
- 238000005259 measurement Methods 0.000 description 12
- 238000012360 testing method Methods 0.000 description 12
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 10
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- 239000002253 acid Substances 0.000 description 8
- DZBUGLKDJFMEHC-UHFFFAOYSA-N acridine Chemical compound C1=CC=CC2=CC3=CC=CC=C3N=C21 DZBUGLKDJFMEHC-UHFFFAOYSA-N 0.000 description 8
- 229910000679 solder Inorganic materials 0.000 description 8
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- 229920002799 BoPET Polymers 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- XYLMUPLGERFSHI-UHFFFAOYSA-N alpha-Methylstyrene Chemical compound CC(=C)C1=CC=CC=C1 XYLMUPLGERFSHI-UHFFFAOYSA-N 0.000 description 7
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 7
- 238000011156 evaluation Methods 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 7
- 238000002156 mixing Methods 0.000 description 7
- 238000000016 photochemical curing Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 230000035945 sensitivity Effects 0.000 description 7
- 229910000029 sodium carbonate Inorganic materials 0.000 description 7
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 6
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 238000005227 gel permeation chromatography Methods 0.000 description 6
- 229910052753 mercury Inorganic materials 0.000 description 6
- 125000006353 oxyethylene group Chemical group 0.000 description 6
- 230000002829 reductive effect Effects 0.000 description 6
- 239000004743 Polypropylene Substances 0.000 description 5
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 5
- 238000000149 argon plasma sintering Methods 0.000 description 5
- 125000003118 aryl group Chemical group 0.000 description 5
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 238000001035 drying Methods 0.000 description 5
- 239000003960 organic solvent Substances 0.000 description 5
- 229920001155 polypropylene Polymers 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- 125000006276 2-bromophenyl group Chemical group [H]C1=C([H])C(Br)=C(*)C([H])=C1[H] 0.000 description 4
- VVBLNCFGVYUYGU-UHFFFAOYSA-N 4,4'-Bis(dimethylamino)benzophenone Chemical compound C1=CC(N(C)C)=CC=C1C(=O)C1=CC=C(N(C)C)C=C1 VVBLNCFGVYUYGU-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- ISAOCJYIOMOJEB-UHFFFAOYSA-N benzoin Chemical class C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 description 4
- ZLSMCQSGRWNEGX-UHFFFAOYSA-N bis(4-aminophenyl)methanone Chemical class C1=CC(N)=CC=C1C(=O)C1=CC=C(N)C=C1 ZLSMCQSGRWNEGX-UHFFFAOYSA-N 0.000 description 4
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
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- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 4
- 125000000816 ethylene group Chemical group [H]C([H])([*:1])C([H])([H])[*:2] 0.000 description 4
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- 238000003475 lamination Methods 0.000 description 4
- 125000003854 p-chlorophenyl group Chemical group [H]C1=C([H])C(*)=C([H])C([H])=C1Cl 0.000 description 4
- 125000001037 p-tolyl group Chemical group [H]C1=C([H])C(=C([H])C([H])=C1*)C([H])([H])[H] 0.000 description 4
- 239000011164 primary particle Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
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- NSWNXQGJAPQOID-UHFFFAOYSA-N 2-(2-chlorophenyl)-4,5-diphenyl-1h-imidazole Chemical class ClC1=CC=CC=C1C1=NC(C=2C=CC=CC=2)=C(C=2C=CC=CC=2)N1 NSWNXQGJAPQOID-UHFFFAOYSA-N 0.000 description 3
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
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- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
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- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
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- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 150000002923 oximes Chemical class 0.000 description 1
- 125000005702 oxyalkylene group Chemical group 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 125000004817 pentamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- KJFMBFZCATUALV-UHFFFAOYSA-N phenolphthalein Chemical compound C1=CC(O)=CC=C1C1(C=2C=CC(O)=CC=2)C2=CC=CC=C2C(=O)O1 KJFMBFZCATUALV-UHFFFAOYSA-N 0.000 description 1
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 1
- XNGIFLGASWRNHJ-UHFFFAOYSA-L phthalate(2-) Chemical compound [O-]C(=O)C1=CC=CC=C1C([O-])=O XNGIFLGASWRNHJ-UHFFFAOYSA-L 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920013716 polyethylene resin Polymers 0.000 description 1
- 239000003505 polymerization initiator Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920005990 polystyrene resin Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- HJWLCRVIBGQPNF-UHFFFAOYSA-N prop-2-enylbenzene Chemical compound C=CCC1=CC=CC=C1 HJWLCRVIBGQPNF-UHFFFAOYSA-N 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- UORVCLMRJXCDCP-UHFFFAOYSA-N propynoic acid Chemical compound OC(=O)C#C UORVCLMRJXCDCP-UHFFFAOYSA-N 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- DNXIASIHZYFFRO-UHFFFAOYSA-N pyrazoline Chemical compound C1CN=NC1 DNXIASIHZYFFRO-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000010802 sludge Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- ISXSCDLOGDJUNJ-UHFFFAOYSA-N tert-butyl prop-2-enoate Chemical compound CC(C)(C)OC(=O)C=C ISXSCDLOGDJUNJ-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- DVKJHBMWWAPEIU-UHFFFAOYSA-N toluene 2,4-diisocyanate Chemical compound CC1=CC=C(N=C=O)C=C1N=C=O DVKJHBMWWAPEIU-UHFFFAOYSA-N 0.000 description 1
- RUELTTOHQODFPA-UHFFFAOYSA-N toluene 2,6-diisocyanate Chemical compound CC1=C(N=C=O)C=CC=C1N=C=O RUELTTOHQODFPA-UHFFFAOYSA-N 0.000 description 1
- LMYRWZFENFIFIT-UHFFFAOYSA-N toluene-4-sulfonamide Chemical compound CC1=CC=C(S(N)(=O)=O)C=C1 LMYRWZFENFIFIT-UHFFFAOYSA-N 0.000 description 1
- LDHQCZJRKDOVOX-UHFFFAOYSA-N trans-crotonic acid Natural products CC=CC(O)=O LDHQCZJRKDOVOX-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
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- 229910052724 xenon Inorganic materials 0.000 description 1
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Landscapes
- Manufacturing Of Printed Wiring (AREA)
- Materials For Photolithography (AREA)
- Polymerisation Methods In General (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Description
0.005≦A/T≦0.020 (I)
前記保護フィルムの酸素透過率が、5×10−2m3/m2・日・MPa以下である、感光性エレメントに関する。
また、本発明の感光性エレメントにおいて、感光層の厚さが、2〜30μmであることが好ましい。
支持フィルム10は、ヘーズが0.01〜1.5%であり、かつ支持フィルム10に含まれる直径5μm以上の粒子及び凝集物(以下、単に「粒子等」という)の総数が5個/mm2以下のものである。ここで、支持フィルム10に含まれる直径5μm以上の粒子等には、支持フィルム10の主面から突出しているもの及びフィルム内部に存在するものの両方が含まれる。また、直径5μm以上の粒子等には、直径5μm以上の一次粒子及び直径5μm未満の一次粒子の凝集物が含まれる。
感光層20は感光性樹脂組成物からなる層である。感光層20の厚さT(μm)と感光層20の365nmにおける吸光度Aとは、下記式(I)で表される関係を満足する。
0.005≦A/T≦0.020 (I)
本実施形態のレジストパターンの形成方法は、上記感光性エレメント1を、感光層20、支持フィルム10の順に回路形成用基板上に積層する積層工程と、活性光線を、上記支持フィルム10を通して感光層20の所定部分に照射して、感光層20に光硬化部を形成させる露光工程と、上記光硬化部以外の感光層20の部分を除去する現像工程と、を含む方法である。
本実施形態のプリント配線板の製造方法は、上記レジストパターンの形成方法によりレジストパターンの形成された回路形成用基板に対し、エッチング又はめっきすることによって行われる。ここで、回路形成用基板のエッチング又はめっきは、現像されたレジストパターンをマスクとして、回路形成用基板の表面を公知の方法によりエッチング又はめっきすることによって行われる。
本発明の感光性エレメント1は、リジット基板と、そのリジット基板上に形成された絶縁膜とを備える半導体パッケージ基板に用いることもできる。この場合、感光層20の光硬化部を絶縁膜として用いればよい。感光層20の光硬化部を、例えば半導体パッケージ用のソルダーレジストとして用いる場合は、上述のレジストパターンの形成方法における現像終了後、はんだ耐熱性、耐薬品性等を向上させる目的で、高圧水銀ランプによる紫外線照射や加熱を行うことが好ましい。紫外線を照射させる場合は必要に応じてその照射量を調整することができ、例えば0.2〜10J/cm2程度の照射量で照射を行うこともできる。また、レジストパターンを加熱する場合は、100〜170℃程度の範囲で15〜90分程行われることが好ましい。さらに紫外線照射と加熱とを同時に行うこともでき、いずれか一方を実施した後、他方を実施することもできる。紫外線の照射と加熱とを同時に行う場合、はんだ耐熱性、耐薬品性等を効果的に付与する観点から、60〜150℃に加熱することがより好ましい。
まず、表1に示す組成のバインダーポリマーを下記合成例にしたがって合成した。
撹拌機、還流冷却器、温度計、滴下ロート及び窒素ガス導入管を備えたフラスコに、質量比6:4であるトルエン及びメチルセロソルブの配合物420gを加え、窒素ガスを吹き込みながら撹拌して、80℃まで加熱した。一方、共重合単量体としてメタクリル酸132g、メタクリル酸メチル24g、スチレン222g及びメタクリル酸ベンジル222gと、アゾビスイソブチロニトリル5.4gとを混合した溶液(以下、「溶液a」という)を用意し、80℃に加熱された質量比6:4であるトルエン及びメチルセロソルブの上記配合物に溶液aを4時間かけて滴下した。その後、質量比6:4であるトルエン及びメチルセロソルブの配合物40gを用い滴下ロートを洗浄し、フラスコ内に加え、80℃で撹拌しながら2時間保温した。さらに、質量比6:4であるメチルセロソルブ及びトルエンの配合物40gにアゾビスイソブチロニトリル1.0gを溶解した溶液を、30分かけてフラスコ内に滴下した。そして、質量比6:4であるトルエン及びメチルセロソルブの配合物120gを用い滴下ロートを洗浄し、フラスコ内に加えた。滴下後の溶液を撹拌しながら80℃で3時間保温した後、30分間かけて90℃に加温した。90℃で2時間保温した後、冷却して(a)成分であるバインダーポリマー溶液を得た。このバインダーポリマー溶液に、トルエンを加えて不揮発成分濃度(固形分濃度)が40質量%になるように調製した。バインダーポリマーの重量平均分子量は、バインダーポリマーの重量平均分子量は、45000であった。なお、ゲルパーミエーションクロマトグラフィー(GPC)法によって測定し、標準ポリスチレンの検量線を用いて換算することにより算出した。GPCの条件を以下に示す。また、バインダーポリマーの酸価を下記測定手順に従い測定した結果、酸価は107mgKOHであった。
共重合単量体としてメタクリル酸150g、メタクリル酸メチル300g及びスチレン150gと、アゾビスイソブチロニトリル5.4gとを混合した溶液(以下、「溶液b」という)を用意した以外は、合成例1と同様の操作をして(a)成分であるバインダーポリマー溶液を得た。このバインダーポリマー溶液に、トルエンを加えて不揮発成分濃度(固形分濃度)が40質量%になるように調製した。バインダーポリマーの重量平均分子量は、バインダーポリマーの重量平均分子量は、45000であった。また、バインダーポリマーの酸価は121mgKOHであった。
ポンプ:日立 L−6000型(株式会社日立製作所製、商品名)
カラム:Gelpack GL−R420+Gelpack GL−R430+Gelpack GL−R440(計3本)(以上、日立化成工業株式会社製、商品名)
溶離液:テトラヒドロフラン
測定温度:40℃
流量:2.05mL/分
検出器:日立 L−3300型RI(株式会社日立製作所製、商品名)
三角フラスコに合成したバインダーポリマーを秤量し、混合溶剤(質量比:トルエン/メタノール=70/30)を加え溶解後、指示薬としてフェノールフタレイン溶液を添加し、N/10水酸化カリウムアルコール溶液で滴定し、酸価を測定した。
b−2:BPE−200(EO変性ビスフェノールAジメタクリレート、新中村工業株式会社製、商品名)
b−3:FA−MECH(γ−クロロ−2−ヒロドキシプロピル−β′−メタクリロイルオキシエリル−o−フタレート、日立化成工業株式会社製、商品名)
c−1:2−(o−クロロフェニル)−4,5−ジフェニルイミダゾール二量体
c−2:1−フェニル−3−(4−メトキシスチリル)−5−(4−メトキシフェニル)ピラゾリン
c−3:1−フェニル−3−(4−メトキシフェニル)−5−(4−t−ブチルフェニル)ピラゾリン
c−4:1−フェニル−3−フェニル−5−(4−イソプロピルフェニル)ピラゾリン
c−5:N,N′−テトラエチル−4,4′−ジアミノベンゾフェノン
c−6:4−t−ブチルカテコール
感光性エレメント1の支持フィルム10として、下記PETフィルム及び保護フィルム用意した。各PETフィルムに含まれる5μm以上の粒子等の個数及びヘーズ及び各保護フィルムの酸素透過率を測定した結果を表4及び5に示す。
<支持フィルム>
微粒子を含有する層を表裏に有する3層構造の二軸配向PETフィルム:FB40(東レ株式会社製、商品名)
微粒子が片側にのみ存在する2層構造の二軸配向PETフィルム:A−1517(東洋紡績株式会社製、商品名)
微粒子を含有する層を表裏に有する3層構造の二軸配向PETフィルム:HTR−02(帝人デュポンフィルム株式会社製、商品名)
ポリエチレンテレフタレートフィルム:FB40(東レ株式会社製、商品名、厚さ16μm)
ポリプロピレンフィルム:E−200C(王子製紙株式会社製、商品名、厚さ20μm)
ポリエチレンフィルム:NF−15A(タマポリ株式会社製、商品名、厚さ28μm)
銅箔(厚さ:35μm)を両面に積層したガラスエポキシ材である銅張積層板(日立化成工業株式会社製、商品名「MLC−E−679」)の銅表面を、表面粗化処理液「メックエッチボンド CZ−8100」(メック株式会社製、商品名)を用い表面処理し、酸洗及び水洗後、空気流で乾燥した。得られた銅張積層板を80℃に加温し、保護フィルムを剥離しながら、感光層20が銅表面に接するように感光性エレメント1をラミネートした。こうして、銅張積層板、感光層20、支持フィルム10の順に積層された積層体を得た。ラミネートは、120℃のヒートロールを用いて、0.4MPaの圧着圧力、1.5m/分のロール速度で行なった。これらの積層体は、以下に示す試験における試験片として用いた。
上記試験片を125mm×200mmのサイズにカットし、支持フィルム10を剥離した後、30℃の1質量%炭酸ナトリウム水溶液を用いて、未露光状態の感光層20をスプレー現像し、未露光部が完全に除去される時間を測定し、最少現像時間とした。測定結果を表4及び表5に示す。
試験片の支持フィルム10上に、ネガとして41段ステップタブレット(日立化成工業株式会社製)を載置し、高圧水銀灯ランプを有する露光機(株式会社オーク製作所製、商品名「EXM−1201」)及びi線バンドバスフィルターを用いて、現像後のレジスト硬化段数が11段になる所定の照射エネルギー量となるように感光層20を露光した。次に、支持フィルム10を剥離し、30℃の1質量%炭酸ナトリウム水溶液を最少現像時間の2倍の時間でスプレー現像し、未露光部分を除去して現像を行った。そして、銅張積層板上に形成された光硬化膜のステップタブレットの段数が11段になっていることを確認し、このときの露光量を各感光層20の所定の照射エネルギー量とした。結果を表4及び5に示す。
解像度を調べるため、41段ステップタブレットを有するフォトツールと、解像度評価用ネガとしてライン幅/スペース幅が2/2〜30/30(単位:μm)の配線パターンを有するガラスクロムタイプのフォトツールとを試験片の支持フィルム10上に密着させ、高圧水銀灯ランプを有する露光機(株式会社オーク製作所製、商品名「EXM−1201」)及びi線バンドパスフィルターを用いて、41段ステップタブレットの現像後の残存ステップ段数が11段となる照射エネルギー量で露光を行った。次に、支持フィルム10を剥離し、30℃で1質量%炭酸ナトリウム水溶液を最少現像時間の2倍の時間でスプレー現像し、未露光部分を除去して現像を行った。ここで、解像度は、現像処理後に光学顕微鏡を用いてレジストパターンを観察したとき、未露光部を完全に除去することができたライン幅間のスペース幅の最も小さい幅(単位:μm)を測定することにより評価した。なお、解像度の評価は数値が小さいほど良好な値である。結果を表4及び5に示す。
密着性を調べるため、41段ステップタブレットを有するフォトツールと、密着性評価用ネガとしてライン幅/スペース幅が2/6〜30/90(単位:μm)の配線パターンを有するガラスクロムタイプのフォトツールとを試験片の支持フィルム10上に密着させ、高圧水銀灯ランプを有する露光機(株式会社オーク製作所製、商品名「EXM−1201」)を用いて、41段ステップタブレットの現像後の残存ステップ段数が11.0となる照射エネルギー量で露光を行った。次に、支持フィルム10を剥離し、30℃で1質量%炭酸ナトリウム水溶液を最少現像時間の2倍の時間でスプレー現像し、未露光部分を除去して現像を行った。ここで、密着性は、現像処理によって未露光部をきれいに除去することができ、現像処理後に光学顕微鏡を用いてレジストパターンを観察したとき、剥がれ及びよれがなく残ったライン幅のうち最も小さい幅(単位:μm)を測定することにより評価した。なお、密着性の評価は数値が小さいほど良好な値である。結果を表4及び5に示す。
上記解像度測定試験で評価した回路形成用基板において、ライン幅/スペース幅が10/10(単位:μm)の配線パターンのレジストラインの断面形状を観察した。観察手法として、タングステンを用いてレジストの保護膜を形成した後、集束イオンビーム加工観察装置(株式会社日立製作所製、商品名「FB−2000A」、イオン種:Gaイオン、加速電圧:30kV、観察条件:ビームアパーチャー直径500μm)を用い、レジストパターン中心部のレジスト断面を露出させた。次いで、走査型電子顕微鏡(株式会社日立製作所製、商品名「FE−SEM S−4700」)により観察し、レジスト上面とレジスト底面の線幅の差を測定し、以下のように評価した。結果を表4及び5に示す。
A:線幅の差が1.0μm未満である。
B:線幅の差が1.0〜1.5μmである。
C:線幅の差が1.5μmを超える。
上記解像度測定試験で評価した基板において、レジストラインの側面形状を走査型電子顕微鏡(株式会社日立製作所製、商品名「SU−1500」)により観察し、以下のように評価した。結果を表3に示す。
A:滑らかな形状
B:やや粗い形状
C:粗い形状
レジストの微小欠損部発生性を調べるため、41段ステップタブレットを有するフォトツールと、ライン幅/スペース幅が10/30(単位:μm)の配線パターンを有するガラスクロムタイプのフォトツールとを試験片の支持フィルム10上に密着させ、高圧水銀灯ランプを有する露光機及びi線バンドパスフィルターを用いて、41段ステップタブレットの現像後の残存ステップ段数が8.0となる照射エネルギー量で露光を行った。次に、支持フィルム10を剥離し、30℃の1質量%炭酸ナトリウム水溶液を最少現像時間の4倍の時間スプレーし、未露光部分を除去した。次いで、顕微鏡を用いて、レジスト欠損部の個数を数えた。ライン長さが1mmでライン本数が10本を観察単位とし、n数を5とした時の平均値をレジスト微小欠損部発生数とした。その結果を表4、5に示す。
それに対し、表4の実施例1〜5、参考例1、実施例7〜9に示すように、本発明の感光性エレメント1を用いた場合、光感度も高く、密着性及び解像度とも良好であり、レジストの微少な欠損を十分に低減し、断面形状がより矩形に近いレジストパターンを形成可能である。保護フィルムの変更のみで、光感度が向上することは、生産性向上に有効であり、且つ、レジストの組成設計の幅ができ、効果は大きい。
Claims (11)
- 支持フィルムと、該支持フィルム上に形成された感光性樹脂組成物に由来する感光層と、保護フィルムを備える感光性エレメントであって、前記支持フィルムのヘーズが、0.01〜1.5%であり、かつ、該支持フィルムに含まれる直径5μm以上の粒子及び直径5μm以上の凝集物の総数が5個/mm2以下であり、前記感光層が、バインダーポリマー、エチレン性不飽和結合を有する光重合性化合物及び光重合開始剤を含有し、
前記光重合開始剤が、2,4,5−トリアリールイミダゾール二量体、及び、下記一般式(XI)又は(XII)でそれぞれ表されるピラゾリン化合物を含有し、
前記ピラゾリン化合物の含有量が、前記光重合開始剤の総量を基準として0.5〜5.0質量%であり、
前記感光層の厚さT(μm)と前記感光層の365nmにおける吸光度Aとが、下記式(I)で表される関係を満足し、
0.005≦A/T≦0.020 (I)
前記保護フィルムの酸素透過率が、5×10−2m3/m2・日・MPa以下である、感光性エレメント。
[式中、Rは炭素数1〜3の直鎖状若しくは分岐状のアルキル基、炭素数1〜3の直鎖状若しくは分岐状のアルコキシ基又はハロゲン原子を示し、a、b及びcの総和は1〜6であり、a、b及びcの総和が2以上のとき、複数存在するRは互いに同一でも異なっていてもよい。] - 支持フィルムと、該支持フィルム上に形成された感光性樹脂組成物に由来する感光層と、保護フィルムを備える感光性エレメントであって、前記支持フィルムのヘーズが、0.01〜1.5%であり、かつ、該支持フィルムに含まれる直径5μm以上の粒子及び直径5μm以上の凝集物の総数が5個/mm2以下であり、前記感光層が、バインダーポリマー、エチレン性不飽和結合を有する光重合性化合物及び光重合開始剤を含有し、
前記光重合開始剤が、2,4,5−トリアリールイミダゾール二量体、及び、1−フェニル−3−(4−メトキシフェニル)−5−(4−t−ブチルフェニル)ピラゾリンを含有し、
前記感光層の厚さT(μm)と前記感光層の365nmにおける吸光度Aとが、下記式(I)で表される関係を満足し、
0.005≦A/T≦0.020 (I)
前記保護フィルムの酸素透過率が、5×10−2m3/m2・日・MPa以下である、感光性エレメント。 - 支持フィルムと、該支持フィルム上に形成された感光性樹脂組成物に由来する感光層と、保護フィルムを備える感光性エレメントであって、前記支持フィルムのヘーズが、0.01〜1.5%であり、かつ、該支持フィルムに含まれる直径5μm以上の粒子及び直径5μm以上の凝集物の総数が5個/mm2以下であり、前記感光層が、バインダーポリマー、エチレン性不飽和結合を有する光重合性化合物及び光重合開始剤を含有し、
前記光重合開始剤が、2,4,5−トリアリールイミダゾール二量体、及び、1−フェニル−3−(4−メトキシフェニル)−5−(4−t−ブチルフェニル)ピラゾリンを含有し、
1−フェニル−3−(4−メトキシフェニル)−5−(4−t−ブチルフェニル)ピラゾリンの含有量が、前記光重合開始剤の総量を基準として0.5〜5.0質量%であり、
前記感光層の厚さT(μm)と前記感光層の365nmにおける吸光度Aとが、下記式(I)で表される関係を満足し、
0.005≦A/T≦0.020 (I)
前記保護フィルムの酸素透過率が、5×10−2m3/m2・日・MPa以下である、感光性エレメント。 - 感光層の厚さが、2〜30μmである、請求項1〜3のいずれか一項に記載の感光性エレメント。
- 一般式(XI)又は(XII)において、Rのうち少なくとも一つがイソプロピル基である、請求項1又は4に記載の感光性エレメント。
- 一般式(XI)又は(XII)において、Rのうち少なくとも一つがメトキシ基又はエトキシ基である、請求項1又は4に記載の感光性エレメント。
- 光重合性化合物が、下記一般式(II)で表される化合物を含む、請求項1〜6のいずれか一項に記載の感光性エレメント。
[式中、R5及びR6は、それぞれ独立に水素原子又はメチル基を示し、Yは炭素数2〜6のアルキレン基を示し、n1及びn2はそれぞれ独立に正の整数を示し、n1+n2は、2〜40であり、n1+n2が2以上のとき、複数存在するYは互いに同一でも異なっていてもよい。] - バインダーポリマーが、下記一般式(III)、(IV)及び(V)で表される2価の基を有する、請求項1〜7のいずれか一項に記載の感光性エレメント。
[式中、R7、R8及びR10はそれぞれ独立に水素原子又はメチル基を示し、R9は炭素数1〜4のアルキル基、炭素数1〜3のアルコキシ基、水酸基又はハロゲン原子を示し、R11は炭素数1〜6のアルキル基を示し、pは0〜5の整数を示し、pが2以上のとき、複数存在するR9は互いに同一でも異なっていてもよい。] - バインダーポリマーが、下記一般式(VI)で表される2価の基を更に有する、請求項8記載の感光性エレメント。
[式中、R12は水素原子又はメチル基を示し、R13は炭素数1〜4のアルキル基、炭素数1〜3のアルコキシ基、水酸基又はハロゲン原子を示し、qは0〜5の整数を示し、qが2以上のとき、複数存在するR13は互いに同一でも異なっていてもよい。] - 請求項1〜9のいずれか一項に記載の感光性エレメントを、前記保護フィルムを除去後、前記感光層、前記支持フィルムの順に回路形成用基板上に積層する積層工程と、活性光線を、前記支持フィルムを通して前記感光層の所定部分に照射して、前記感光層に光硬化部を形成させる露光工程と、前記光硬化部以外の前記感光層を除去する現像工程とを含む、レジストパターンの形成方法。
- 請求項10記載のレジストパターンの形成方法によりレジストパターンが形成された回路形成用基板に対し、エッチング又はめっきを施す、プリント配線板の製造方法。
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