JP5787739B2 - 半導体発光装置およびその製造方法 - Google Patents
半導体発光装置およびその製造方法 Download PDFInfo
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- JP5787739B2 JP5787739B2 JP2011276137A JP2011276137A JP5787739B2 JP 5787739 B2 JP5787739 B2 JP 5787739B2 JP 2011276137 A JP2011276137 A JP 2011276137A JP 2011276137 A JP2011276137 A JP 2011276137A JP 5787739 B2 JP5787739 B2 JP 5787739B2
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- Prior art keywords
- layer
- barrier metal
- metal layer
- light emitting
- emitting device
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- 239000004065 semiconductor Substances 0.000 title claims description 41
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 101
- 239000002184 metal Substances 0.000 claims description 101
- 230000004888 barrier function Effects 0.000 claims description 65
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 57
- 239000000758 substrate Substances 0.000 claims description 47
- 239000010936 titanium Substances 0.000 claims description 28
- 229910052759 nickel Inorganic materials 0.000 claims description 17
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 11
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 177
- 239000010931 gold Substances 0.000 description 10
- 230000005012 migration Effects 0.000 description 7
- 238000013508 migration Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 238000001771 vacuum deposition Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Description
図1は、第1実施形態に係る半導体発光装置100を表す模式断面図である。半導体発光装置100は、例えば、GaN系窒化物半導体を材料とする発光ダイオード(Light Emitting Diode:LED)である。また、半導体発光装置100は、所謂Thin-Film構造を有するLEDであり、半導体発光層を含む発光体10と、発光体10を支持する支持基板20と、を備える。
発光体10と第1のバリアメタル層40aとの間には、発光体10に電気的に接続された電極50が設けられる。
発光体10は、例えば、n型GaN層3と、発光層5と、p型GaN層と、を含む。発光層5は、InGaN井戸層およびGaN障壁層からなる多重量子井戸構造(Multi Quantum Well;MQW)を有し、例えば、青色の光を発光する。
図6(a)は、第2実施形態に係る半導体発光装置200を表す模式断面図である。図6(b)は、半導体発光装置200の反射電極55およびその周辺を表す部分断面図である。
Claims (6)
- 発光層及びp型GaN層を含む半導体からなる発光体と、
前記発光体を支持する支持基板と、
前記発光体と前記支持基板との間に設けられ、前記発光体と前記支持基板とを接合する
接合層と、
前記発光体と前記接合層との間に設けられた第1のバリアメタル層であって、ニッケル
からなる第1の層と、ニッケルよりも線膨張係数の小さい金属からなる第2の層と、を交
互に積層した多層構造を含む第1のバリアメタル層と、
前記発光体と前記第1のバリアメタル層との間において、前記発光体および前記第1バ
リアメタル層に接し、ニッケルよりも線膨張係数が大きい電極と、
を備え、
前記第1バリアメタル層は、前記第1の層と前記第2の層とのペアを3組以上含み、前
記第2の層を介して前記電極に接し、前記電極間において前記p型GaN層に接する半導
体発光装置。 - 前記電極は、銀(Ag)を含み、前記半導体発光層が放射する光を反射する請求項1記
載の半導体発光装置。 - 前記接合層と、前記支持基板と、の間に設けられた第2のバリアメタル層をさらに備え
、
前記第2のバリアメタル層は、ニッケルからなる第1の層と、ニッケルよりも線膨張係
数の小さい金属からなる第2の層と、を交互に積層した多層構造を含む請求項1または2
のいずれかに記載の半導体発光装置。 - 前記第2の層は、チタン(Ti)、白金(Pt)、タンタル(Ta)およびタングステ
ン(W)から選択された少なくとも1つの金属を含む請求項1〜3のいずれか1つに記載
の半導体発光装置。 - 前記多層構造は、3層以上の前記第1の層と、3層以上の前記第2の層と、を含む請求
項1〜4のいずれか1つに記載の半導体発光装置。 - 発光層及びp型GaN層を含む半導体からなる発光体と、支持基板と、が接合された半
導体発光装置の製造方法であって、
前記発光体に接し、ニッケルよりも線膨張係数の大きい電極を形成し、
前記電極の上に、ニッケルからなる第1の層と、ニッケルよりも線膨張係数の小さい金
属からなる第2の層と、を交互に積層した多層構造であって、前記第1の層と前記第2の
層とのペアを3組以上含み、前記第2の層を介して前記電極に接し、前記電極間において
前記p型GaN層に接する多層構造を含む第1のバリアメタル層を形成する工程と、
前記支持基板の上に、ニッケルからなる第1の層と、ニッケルよりも線膨張係数の小さ
い金属からなる第2の層と、を交互に積層した多層構造を含む第2のバリアメタル層を形
成する工程と、
前記第1のバリアメタル層と、前記第2のバリアメタル層と、の間に接合層を挟んで、
前記発光体と前記支持基板とを接合する工程と、
を備えた半導体発光装置の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011276137A JP5787739B2 (ja) | 2011-12-16 | 2011-12-16 | 半導体発光装置およびその製造方法 |
US13/472,310 US8723336B2 (en) | 2011-12-16 | 2012-05-15 | Semiconductor light emitting device and method for manufacturing same |
US14/224,634 US20140203296A1 (en) | 2011-12-16 | 2014-03-25 | Semiconductor light emitting device and method for manufacturing same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011276137A JP5787739B2 (ja) | 2011-12-16 | 2011-12-16 | 半導体発光装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013128008A JP2013128008A (ja) | 2013-06-27 |
JP5787739B2 true JP5787739B2 (ja) | 2015-09-30 |
Family
ID=48609220
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011276137A Expired - Fee Related JP5787739B2 (ja) | 2011-12-16 | 2011-12-16 | 半導体発光装置およびその製造方法 |
Country Status (2)
Country | Link |
---|---|
US (2) | US8723336B2 (ja) |
JP (1) | JP5787739B2 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130328098A1 (en) * | 2012-05-15 | 2013-12-12 | High Power Opto. Inc. | Buffer layer structure for light-emitting diode |
JP2015056504A (ja) * | 2013-09-11 | 2015-03-23 | 株式会社東芝 | 光結合装置および発光素子 |
TWI591848B (zh) | 2013-11-28 | 2017-07-11 | 晶元光電股份有限公司 | 發光元件及其製造方法 |
CN104701435A (zh) * | 2013-12-06 | 2015-06-10 | 晶元光电股份有限公司 | 发光元件及其制造方法 |
JP6492645B2 (ja) * | 2014-12-25 | 2019-04-03 | 日亜化学工業株式会社 | 半導体装置および半導体装置の製造方法 |
US10236413B2 (en) | 2015-04-20 | 2019-03-19 | Epistar Corporation | Light-emitting device and manufacturing method thereof |
JP6834257B2 (ja) * | 2016-08-31 | 2021-02-24 | 日亜化学工業株式会社 | 発光素子の製造方法 |
EP3537486A4 (en) * | 2016-11-03 | 2020-08-12 | LG Innotek Co., Ltd. | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE HOUSING CONTAINING IT |
KR102607885B1 (ko) * | 2016-11-03 | 2023-11-29 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 반도체 소자 및 이를 포함하는 반도체 소자 패키지 |
JP6824501B2 (ja) * | 2017-02-08 | 2021-02-03 | ウシオ電機株式会社 | 半導体発光素子 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101030068B1 (ko) * | 2002-07-08 | 2011-04-19 | 니치아 카가쿠 고교 가부시키가이샤 | 질화물 반도체 소자의 제조방법 및 질화물 반도체 소자 |
TWI266435B (en) * | 2004-07-08 | 2006-11-11 | Sharp Kk | Nitride-based compound semiconductor light emitting device and fabricating method thereof |
JP5126875B2 (ja) * | 2006-08-11 | 2013-01-23 | シャープ株式会社 | 窒化物半導体発光素子の製造方法 |
US7795054B2 (en) * | 2006-12-08 | 2010-09-14 | Samsung Led Co., Ltd. | Vertical structure LED device and method of manufacturing the same |
JP2008186959A (ja) * | 2007-01-29 | 2008-08-14 | Toyoda Gosei Co Ltd | Iii−v族半導体素子、およびその製造方法 |
JP5045336B2 (ja) * | 2007-04-16 | 2012-10-10 | 豊田合成株式会社 | 半導体発光素子 |
JP5329341B2 (ja) * | 2009-08-19 | 2013-10-30 | スタンレー電気株式会社 | 光半導体装置及びその製造方法 |
JP5423390B2 (ja) | 2009-12-26 | 2014-02-19 | 豊田合成株式会社 | Iii族窒化物系化合物半導体素子及びその製造方法 |
JP5148647B2 (ja) | 2010-03-05 | 2013-02-20 | 株式会社東芝 | 半導体発光素子、半導体発光装置及び半導体発光素子の製造方法 |
JP5725927B2 (ja) * | 2010-05-18 | 2015-05-27 | ソウル バイオシス カンパニー リミテッドSeoul Viosys Co.,Ltd. | 高効率発光ダイオード及びその製造方法 |
JP2012089828A (ja) * | 2010-09-22 | 2012-05-10 | Toshiba Corp | 半導体装置の製造方法 |
-
2011
- 2011-12-16 JP JP2011276137A patent/JP5787739B2/ja not_active Expired - Fee Related
-
2012
- 2012-05-15 US US13/472,310 patent/US8723336B2/en not_active Expired - Fee Related
-
2014
- 2014-03-25 US US14/224,634 patent/US20140203296A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20130153920A1 (en) | 2013-06-20 |
JP2013128008A (ja) | 2013-06-27 |
US8723336B2 (en) | 2014-05-13 |
US20140203296A1 (en) | 2014-07-24 |
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