JP5775570B2 - マルチスペクトル感光素子及びそのサンプリング方法 - Google Patents
マルチスペクトル感光素子及びそのサンプリング方法 Download PDFInfo
- Publication number
- JP5775570B2 JP5775570B2 JP2013512715A JP2013512715A JP5775570B2 JP 5775570 B2 JP5775570 B2 JP 5775570B2 JP 2013512715 A JP2013512715 A JP 2013512715A JP 2013512715 A JP2013512715 A JP 2013512715A JP 5775570 B2 JP5775570 B2 JP 5775570B2
- Authority
- JP
- Japan
- Prior art keywords
- pixel
- sampling
- merger
- pixels
- row
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims description 310
- 238000005070 sampling Methods 0.000 title claims description 194
- 238000006243 chemical reaction Methods 0.000 claims description 53
- 239000003086 colorant Substances 0.000 claims description 42
- 239000003990 capacitor Substances 0.000 claims description 37
- 238000009825 accumulation Methods 0.000 claims description 31
- 238000012935 Averaging Methods 0.000 claims description 20
- 239000002131 composite material Substances 0.000 claims description 10
- 239000011159 matrix material Substances 0.000 claims description 10
- 238000012546 transfer Methods 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 7
- 230000008569 process Effects 0.000 description 74
- 239000010410 layer Substances 0.000 description 55
- 238000012545 processing Methods 0.000 description 24
- 230000000750 progressive effect Effects 0.000 description 19
- 238000010586 diagram Methods 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 12
- 230000006870 function Effects 0.000 description 11
- 230000000694 effects Effects 0.000 description 10
- 238000001514 detection method Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 8
- 230000009467 reduction Effects 0.000 description 8
- 230000000295 complement effect Effects 0.000 description 5
- 230000006872 improvement Effects 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- 230000003321 amplification Effects 0.000 description 4
- 238000003491 array Methods 0.000 description 4
- 230000002457 bidirectional effect Effects 0.000 description 4
- 238000003199 nucleic acid amplification method Methods 0.000 description 4
- 238000003672 processing method Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 206010034972 Photosensitivity reaction Diseases 0.000 description 2
- 206010070834 Sensitisation Diseases 0.000 description 2
- 230000001186 cumulative effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000036211 photosensitivity Effects 0.000 description 2
- 230000008313 sensitization Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 230000003044 adaptive effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000003339 best practice Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- NCOPCFQNAZTAIV-UHFFFAOYSA-N cadmium indium Chemical compound [Cd].[In] NCOPCFQNAZTAIV-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000010187 selection method Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
- H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
- H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
- H04N25/135—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on four or more different wavelength filter elements
- H04N25/136—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on four or more different wavelength filter elements using complementary colours
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
- H04N25/46—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Color Television Image Signal Generators (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Color Image Communication Systems (AREA)
Description
前記画素アレイにおける隣接する同行異列、異行同列、又は異行異列の画素間を両々合併してサンプリングを行い、第一の合併画素のサンプリングデータを取得するための第一の合併ユニットと、
第一の合併ユニットが取得した第一の合併画素のサンプリングデータに対して合併とサンプリングとを行い、第二の合併画素のサンプリングデータを取得するための第二の合併ユニットと、を含むマルチスペクトル感光素子、を特徴とする。
Claims (10)
- 行と列とで配列されている画素アレイと、
前記画素アレイにおける隣接する同行異列、異行同列、又は異行異列のいずれかの画素をそれぞれ合併してサンプリングを行い、第一の合併画素のサンプリングデータを取得するための、少なくとも同行異列の異なる色彩画素を合併することを含む第一の合併ユニットと、
前記第一の合併ユニットが取得した前記第一の合併画素のサンプリングデータに対して合併とサンプリングとを行い、第二の合併画素のサンプリングデータを取得するための第二の合併ユニットと、を含み、
前記第一の合併ユニット又は前記第二の合併ユニットの画素合併方式は、同一な又は異なる色彩画素間の電荷累積方式又は二つの異なる色彩画素間の信号平均方式であり、前記異なる色彩画素間の画素合併方式が色彩空間変換の方式に従い、
前記電荷累積方式が読み込みコンデンサで遂行され、
前記画素アレイは少なくとも1つの基本画素を含む複数のマクロ画素から構成されており、
前記マクロ画素は、4つのマトリックス配列の画素と両行中間に位置する2つの非透光の読み込みコンデンサから組成されており、上一行の画素と下一行の画素が1つの読み込みコンデンサを共用し、2つの読み込みコンデンサの間に電荷転送を実現でき、且つ少なくとも1つの読み込みコンデンサに読み込み回路が接続される組成方式を含んでいることを特徴とし、行アドレスと列アドレスの両方を有するマルチスペクトル感光素子。 - 前記第二の合併ユニットが取得した前記第二の合併画素のサンプリングデータに対して合併とサンプリングとを行い、第三の合併画素のサンプリングデータを取得するための第三の合併ユニットを更に含むことを特徴とする請求項1に記載のマルチスペクトル感光素子。
- 前記第一の合併ユニット又は前記第二の合併ユニットの色彩に基づく合併とサンプリングの方式が同色合併方式、異色合併方式、複合合併方式、又は余った色彩を選択的に放棄する合併方式のいずれか一種以上の方式を含んでおり、且つ前記第一の合併ユニットと前記第二の合併ユニットが用いた合併とサンプリングの方式が異なる場合に、少なくとも一方の合併ユニットに於いて同色合併方式が採用されないことを特徴とする請求項1又は2に記載のマルチスペクトル感光素子。
- 前記第一の合併ユニット又は第二の合併ユニットの位置に基づく合併とサンプリングの方式は、バスに直接出力する信号自動平均方式と、行飛ばし又は列飛ばし方式とから選択される少なくとも一種の方式を含むことを特徴とする請求項1から3のいずれかに記載のマルチスペクトル感光素子。
- 前記第三の合併とサンプリングのユニットの合併とサンプリングの方式は、色彩空間変換方式又はバックエンドデジタル画像拡大縮小方式の少なくとも一種を含み、
前記色彩空間変換は、RGBからCyYeMgX空間への変換と、RGBからYUV空間への変換と、CyYeMgXからYUV空間への変換から選択されるいずれかの1種の変換を含んでおり、前記Xとは、R、G、Bのいずれか1種であることを特徴とする請求項2に記載のマルチスペクトル感光素子。 - 前記基本画素が受動画素又は能動画素であることを特徴とする請求項1から5のいずれかに記載のマルチスペクトル感光素子。
- 前記マクロ画素における前記基本画素が、マトリックス状又はハニカム状に配列されていることを特徴とする請求項6に記載のマルチスペクトル感光素子。
- 前記マクロ画素の組成方式は、読み込みコンデンサを持たない3T能動画素組成方式と、一つの読み込みコンデンサを備えた4T能動画素組成方式と、から選択される少なくとも1種の方式を含むことを特徴とする請求項6に記載のマルチスペクトル感光素子。
- 前記1つの読み込みコンデンサを備えた4T能動画素が、4点共有方式、6点共有方式、又は8点共有方式のいずれかを用いることを特徴とする請求項8に記載のマルチスペクトル感光素子。
- 前記マクロ画素は2点によって共有、3点によって共有、又は4点によって共有される読み込みコンデンサを備えている、3T能動画素又は4T能動画素を有する少なくとも一つの基本画素から組成されており、前記基本画素は、4点橋絡共有方式、6点橋絡共有方式、又は8点橋絡共有方式を用いることを特徴とする請求項6に記載のマルチスペクトル感光素子。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/CN2010/073443 WO2011150554A1 (zh) | 2010-06-01 | 2010-06-01 | 一种多光谱感光器件及其采样方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013529035A JP2013529035A (ja) | 2013-07-11 |
JP5775570B2 true JP5775570B2 (ja) | 2015-09-09 |
Family
ID=45066114
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013512715A Expired - Fee Related JP5775570B2 (ja) | 2010-06-01 | 2010-06-01 | マルチスペクトル感光素子及びそのサンプリング方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US9100597B2 (ja) |
EP (1) | EP2512126B1 (ja) |
JP (1) | JP5775570B2 (ja) |
KR (1) | KR101473424B1 (ja) |
CA (1) | CA2787911C (ja) |
HU (1) | HUE039688T2 (ja) |
RU (1) | RU2534018C2 (ja) |
WO (1) | WO2011150554A1 (ja) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5945463B2 (ja) * | 2012-06-28 | 2016-07-05 | オリンパス株式会社 | 固体撮像装置 |
US9293500B2 (en) | 2013-03-01 | 2016-03-22 | Apple Inc. | Exposure control for image sensors |
US9276031B2 (en) | 2013-03-04 | 2016-03-01 | Apple Inc. | Photodiode with different electric potential regions for image sensors |
US9741754B2 (en) | 2013-03-06 | 2017-08-22 | Apple Inc. | Charge transfer circuit with storage nodes in image sensors |
US9549099B2 (en) | 2013-03-12 | 2017-01-17 | Apple Inc. | Hybrid image sensor |
US9319611B2 (en) | 2013-03-14 | 2016-04-19 | Apple Inc. | Image sensor with flexible pixel summing |
US9596423B1 (en) | 2013-11-21 | 2017-03-14 | Apple Inc. | Charge summing in an image sensor |
US9596420B2 (en) | 2013-12-05 | 2017-03-14 | Apple Inc. | Image sensor having pixels with different integration periods |
US9473706B2 (en) | 2013-12-09 | 2016-10-18 | Apple Inc. | Image sensor flicker detection |
US10285626B1 (en) | 2014-02-14 | 2019-05-14 | Apple Inc. | Activity identification using an optical heart rate monitor |
US9232150B2 (en) | 2014-03-12 | 2016-01-05 | Apple Inc. | System and method for estimating an ambient light condition using an image sensor |
US9277144B2 (en) | 2014-03-12 | 2016-03-01 | Apple Inc. | System and method for estimating an ambient light condition using an image sensor and field-of-view compensation |
US9584743B1 (en) | 2014-03-13 | 2017-02-28 | Apple Inc. | Image sensor with auto-focus and pixel cross-talk compensation |
US9497397B1 (en) | 2014-04-08 | 2016-11-15 | Apple Inc. | Image sensor with auto-focus and color ratio cross-talk comparison |
US9538106B2 (en) | 2014-04-25 | 2017-01-03 | Apple Inc. | Image sensor having a uniform digital power signature |
US9686485B2 (en) | 2014-05-30 | 2017-06-20 | Apple Inc. | Pixel binning in an image sensor |
FR3023653B1 (fr) * | 2014-07-09 | 2017-11-24 | Commissariat Energie Atomique | Capteur d'images cmos a echantillonnage multiple correle |
FR3026877B1 (fr) * | 2014-10-03 | 2018-01-05 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Capteur d'empreintes digitales ou palmaires |
US9912883B1 (en) | 2016-05-10 | 2018-03-06 | Apple Inc. | Image sensor with calibrated column analog-to-digital converters |
EP3712945A3 (en) | 2016-09-23 | 2020-12-02 | Apple Inc. | Stacked backside illuminated spad array |
JP6799690B2 (ja) | 2017-01-25 | 2020-12-16 | アップル インコーポレイテッドApple Inc. | 変調感度を有するspad検出器 |
US10656251B1 (en) | 2017-01-25 | 2020-05-19 | Apple Inc. | Signal acquisition in a SPAD detector |
US10962628B1 (en) | 2017-01-26 | 2021-03-30 | Apple Inc. | Spatial temporal weighting in a SPAD detector |
FR3064869B1 (fr) * | 2017-03-28 | 2019-05-03 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Capteur d'images |
US10622538B2 (en) | 2017-07-18 | 2020-04-14 | Apple Inc. | Techniques for providing a haptic output and sensing a haptic input using a piezoelectric body |
US10440301B2 (en) | 2017-09-08 | 2019-10-08 | Apple Inc. | Image capture device, pixel, and method providing improved phase detection auto-focus performance |
US10848693B2 (en) | 2018-07-18 | 2020-11-24 | Apple Inc. | Image flare detection using asymmetric pixels |
US11019294B2 (en) | 2018-07-18 | 2021-05-25 | Apple Inc. | Seamless readout mode transitions in image sensors |
WO2020025684A1 (en) * | 2018-07-31 | 2020-02-06 | Deutsches Krebsforschungszentrum Stiftung des öffentlichen Rechts | Method and system for augmented imaging in open treatment using multispectral information |
US11233966B1 (en) | 2018-11-29 | 2022-01-25 | Apple Inc. | Breakdown voltage monitoring for avalanche diodes |
US11563910B2 (en) | 2020-08-04 | 2023-01-24 | Apple Inc. | Image capture devices having phase detection auto-focus pixels |
US11546532B1 (en) | 2021-03-16 | 2023-01-03 | Apple Inc. | Dynamic correlated double sampling for noise rejection in image sensors |
US12069384B2 (en) | 2021-09-23 | 2024-08-20 | Apple Inc. | Image capture devices having phase detection auto-focus pixels |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6801258B1 (en) | 1998-03-16 | 2004-10-05 | California Institute Of Technology | CMOS integration sensor with fully differential column readout circuit for light adaptive imaging |
US6693670B1 (en) | 1999-07-29 | 2004-02-17 | Vision - Sciences, Inc. | Multi-photodetector unit cell |
RU2152692C1 (ru) * | 1999-09-21 | 2000-07-10 | Бобрышев Владимир Дмитриевич | Преобразователь столбца теплового изображения в электрический сигнал |
JP3515467B2 (ja) * | 2000-02-18 | 2004-04-05 | 三洋電機株式会社 | ディジタルカメラ |
US7424207B2 (en) | 2000-02-18 | 2008-09-09 | Sanyo Electric Co., Ltd. | Digital camera |
JP4557540B2 (ja) * | 2002-12-20 | 2010-10-06 | パナソニック株式会社 | 固体撮像装置及びその駆動方法、並びにカメラ |
US7154075B2 (en) | 2003-11-13 | 2006-12-26 | Micron Technology, Inc. | Method and apparatus for pixel signal binning and interpolation in column circuits of a sensor circuit |
US7091466B2 (en) | 2003-12-19 | 2006-08-15 | Micron Technology, Inc. | Apparatus and method for pixel binning in an image sensor |
KR100871687B1 (ko) | 2004-02-11 | 2008-12-05 | 삼성전자주식회사 | 서브 샘플링 모드에서 디스플레이 품질을 개선한 고체촬상 소자 및 그 구동 방법 |
JP4492250B2 (ja) * | 2004-08-11 | 2010-06-30 | ソニー株式会社 | 固体撮像素子 |
JP4306603B2 (ja) * | 2004-12-20 | 2009-08-05 | ソニー株式会社 | 固体撮像装置および固体撮像装置の駆動方法 |
US7417670B1 (en) * | 2005-01-12 | 2008-08-26 | Ambarella, Inc. | Digital video camera with binning or skipping correction |
US7705900B2 (en) | 2005-06-01 | 2010-04-27 | Eastman Kodak Company | CMOS image sensor pixel with selectable binning and conversion gain |
US8306362B2 (en) * | 2005-07-20 | 2012-11-06 | Omnivision Technologies, Inc. | Selective pixel binning and averaging based on scene illuminant |
JP4894275B2 (ja) * | 2006-01-20 | 2012-03-14 | ソニー株式会社 | 固体撮像装置 |
US7916362B2 (en) | 2006-05-22 | 2011-03-29 | Eastman Kodak Company | Image sensor with improved light sensitivity |
JP4855192B2 (ja) * | 2006-09-14 | 2012-01-18 | 富士フイルム株式会社 | イメージセンサ及びデジタルカメラ |
KR100818987B1 (ko) * | 2006-09-19 | 2008-04-04 | 삼성전자주식회사 | 이미지 촬상 장치 및 상기 이미지 촬상 장치의 동작 방법 |
JP4386096B2 (ja) | 2007-05-18 | 2009-12-16 | ソニー株式会社 | 画像入力処理装置、および、その方法 |
US7924332B2 (en) * | 2007-05-25 | 2011-04-12 | The Trustees Of The University Of Pennsylvania | Current/voltage mode image sensor with switchless active pixels |
CN101345248B (zh) * | 2007-07-09 | 2010-07-14 | 博立码杰通讯(深圳)有限公司 | 多光谱感光器件及其制作方法 |
JP2009021809A (ja) * | 2007-07-11 | 2009-01-29 | Canon Inc | 撮像装置の駆動方法、撮像装置、及び撮像システム |
US7755121B2 (en) * | 2007-08-23 | 2010-07-13 | Aptina Imaging Corp. | Imagers, apparatuses and systems utilizing pixels with improved optical resolution and methods of operating the same |
US8089522B2 (en) * | 2007-09-07 | 2012-01-03 | Regents Of The University Of Minnesota | Spatial-temporal multi-resolution image sensor with adaptive frame rates for tracking movement in a region of interest |
JP5026951B2 (ja) * | 2007-12-26 | 2012-09-19 | オリンパスイメージング株式会社 | 撮像素子の駆動装置、撮像素子の駆動方法、撮像装置、及び撮像素子 |
US7667169B2 (en) * | 2008-05-22 | 2010-02-23 | Omnivision Technologies, Inc. | Image sensor with simultaneous auto-focus and image preview |
JP5272634B2 (ja) * | 2008-06-20 | 2013-08-28 | ソニー株式会社 | 固体撮像装置、固体撮像装置の信号処理方法および撮像装置 |
US8471939B2 (en) | 2008-08-01 | 2013-06-25 | Omnivision Technologies, Inc. | Image sensor having multiple sensing layers |
US7777171B2 (en) * | 2008-08-26 | 2010-08-17 | Eastman Kodak Company | In-pixel summing of charge generated by two or more pixels having two reset transistors connected in series |
JP5253956B2 (ja) * | 2008-10-16 | 2013-07-31 | シャープ株式会社 | 固体撮像装置及びその駆動方法、並びに電子情報機器 |
US8130302B2 (en) | 2008-11-07 | 2012-03-06 | Aptina Imaging Corporation | Methods and apparatus providing selective binning of pixel circuits |
JP5029624B2 (ja) * | 2009-01-15 | 2012-09-19 | ソニー株式会社 | 固体撮像装置及び電子機器 |
US8913166B2 (en) * | 2009-01-21 | 2014-12-16 | Canon Kabushiki Kaisha | Solid-state imaging apparatus |
CN101834974B (zh) * | 2009-03-09 | 2013-12-18 | 博立码杰通讯(深圳)有限公司 | 一种多光谱感光器件及其采样方法 |
-
2010
- 2010-06-01 CA CA2787911A patent/CA2787911C/en not_active Expired - Fee Related
- 2010-06-01 JP JP2013512715A patent/JP5775570B2/ja not_active Expired - Fee Related
- 2010-06-01 RU RU2012157297/07A patent/RU2534018C2/ru not_active IP Right Cessation
- 2010-06-01 KR KR1020127024252A patent/KR101473424B1/ko active IP Right Grant
- 2010-06-01 HU HUE10852353A patent/HUE039688T2/hu unknown
- 2010-06-01 EP EP10852353.1A patent/EP2512126B1/en not_active Not-in-force
- 2010-06-01 WO PCT/CN2010/073443 patent/WO2011150554A1/zh active Application Filing
- 2010-06-01 US US13/699,525 patent/US9100597B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
HUE039688T2 (hu) | 2019-01-28 |
KR101473424B1 (ko) | 2014-12-24 |
CA2787911C (en) | 2017-07-11 |
US9100597B2 (en) | 2015-08-04 |
CA2787911A1 (en) | 2011-12-08 |
EP2512126A4 (en) | 2014-01-01 |
EP2512126B1 (en) | 2018-07-25 |
EP2512126A1 (en) | 2012-10-17 |
WO2011150554A1 (zh) | 2011-12-08 |
KR20130050911A (ko) | 2013-05-16 |
RU2534018C2 (ru) | 2014-11-27 |
RU2012157297A (ru) | 2014-07-20 |
JP2013529035A (ja) | 2013-07-11 |
US20130068934A1 (en) | 2013-03-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5775570B2 (ja) | マルチスペクトル感光素子及びそのサンプリング方法 | |
JP4777496B2 (ja) | 固体撮像素子 | |
US5955753A (en) | Solid-state image pickup apparatus and image pickup apparatus | |
US6992714B1 (en) | Image pickup apparatus having plural pixels arranged two-dimensionally, and selective addition of different pixel color signals to control spatial color arrangement | |
US9131178B2 (en) | Solid-state imaging apparatus for selectively outputting signals from pixels therein | |
JP4611296B2 (ja) | 電荷ビニング型イメージセンサ | |
US6992341B2 (en) | Amplifying solid-state image pickup device | |
EP2338283B1 (en) | Image sensor with vertical binning of pixels | |
US20090027530A1 (en) | Solid-state image pick-up device | |
CN101834974B (zh) | 一种多光谱感光器件及其采样方法 | |
JP2009521842A (ja) | 静止画またはビデオ撮影用画像センサ | |
US7379107B2 (en) | Image sensor for still or video photography | |
US7643079B2 (en) | Control circuit for reading out signal charges from main and subsidiary pixels of a solid-state image sensor separately from each other in interlace scanning | |
JP2000295530A (ja) | 固体撮像装置 | |
JP5767320B2 (ja) | 感光素子、感光素子の読み込み方法、及び感光素子の読み込み回路 | |
JPS60217761A (ja) | 高解像度固体撮像装置 | |
KR100891119B1 (ko) | Ccd센서 또는 하이브리드 센서의 2차원 전하이동 방법 | |
CN101853861B (zh) | 一种感光器件及其读取方法、读取电路 | |
JPH10214957A (ja) | 固体撮像装置 | |
CN101853861A (zh) | 一种感光器件及其读取方法、读取电路 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20140217 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20140224 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20140312 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20140319 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20140417 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20140424 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140515 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20141111 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150310 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20150423 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150609 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150703 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5775570 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |