JP5757869B2 - 表面処理された窒化アルミニウム製バッフルを製造する方法 - Google Patents
表面処理された窒化アルミニウム製バッフルを製造する方法 Download PDFInfo
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- JP5757869B2 JP5757869B2 JP2011523981A JP2011523981A JP5757869B2 JP 5757869 B2 JP5757869 B2 JP 5757869B2 JP 2011523981 A JP2011523981 A JP 2011523981A JP 2011523981 A JP2011523981 A JP 2011523981A JP 5757869 B2 JP5757869 B2 JP 5757869B2
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- baffle
- metal oxide
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- aluminum nitride
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims description 57
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 238000000034 method Methods 0.000 claims description 110
- 230000008569 process Effects 0.000 claims description 83
- 229910044991 metal oxide Inorganic materials 0.000 claims description 67
- 150000004706 metal oxides Chemical class 0.000 claims description 67
- 239000011230 binding agent Substances 0.000 claims description 37
- 239000004065 semiconductor Substances 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 238000005245 sintering Methods 0.000 claims description 8
- 239000002253 acid Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 238000005422 blasting Methods 0.000 claims description 4
- VQCBHWLJZDBHOS-UHFFFAOYSA-N erbium(iii) oxide Chemical compound O=[Er]O[Er]=O VQCBHWLJZDBHOS-UHFFFAOYSA-N 0.000 claims description 4
- 238000000227 grinding Methods 0.000 claims description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 2
- 238000005498 polishing Methods 0.000 claims description 2
- 238000005488 sandblasting Methods 0.000 claims description 2
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims 1
- 239000007789 gas Substances 0.000 description 99
- 239000000758 substrate Substances 0.000 description 74
- 238000012545 processing Methods 0.000 description 33
- 235000011194 food seasoning agent Nutrition 0.000 description 15
- 238000004140 cleaning Methods 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 239000000843 powder Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 5
- 238000011109 contamination Methods 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical group [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 238000009770 conventional sintering Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000013529 heat transfer fluid Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 150000005837 radical ions Chemical class 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002341 toxic gas Substances 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45591—Fixed means, e.g. wings, baffles
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
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- C04B40/00—Processes, in general, for influencing or modifying the properties of mortars, concrete or artificial stone compositions, e.g. their setting or hardening ability
- C04B40/0092—Temporary binders, mortars or concrete, i.e. materials intended to be destroyed or removed after hardening, e.g. by acid dissolution
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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Description
101:内部体積
102:基板支持部
106:基板
108:静電チャック
110:プロセス・チャンバ
112:真空システム
114:ソース・プラズマ・システム
116:バイアス・プラズマ・システム
118:ガス供給システム
119:ガス供給ライン
120:プラズマ処理領域
121:ドーム
122:ヒーター・プレート
124:冷却プレート
126:本体部材
128:挿入/取り外し用開口部
130:スロットル本体
132:マルチブレード・スロットル弁
134:ゲート弁
136:ターボ分子ポンプ
137:上部RFソース発生器
138:上部コイル
139、142:整合回路
140:側部コイル
141:側部RFソース発生器
144:RFバイアス発生器
146:バイアス整合回路
148:ガス・リング
150:上部ノズル
152:上部通気孔
153、154:ガス・ノズル
160:システム・コントローラ
162:プロセッサ
164:メモリ
200:バッフル
201:前側
202:本体
203:裏側
204:中央ステム
206:外側環
208:ガス入口
209:チャネル
210:ガス出口
212:孔
502:窒化アルミニウム
504:金属酸化物
Claims (3)
- 半導体プロセス・チャンバで用いるためのバッフルを製造する方法であって、
アルミニウム、窒素、及び金属酸化物結合剤を焼結して、過剰な金属酸化物結合剤がその表面上に配置された、前記バッフルの本体を形成し、
前記表面から前記過剰な金属酸化物結合剤のバルクを除去する、
ステップを含み、
前記過剰な金属酸化物結合剤の前記バルクを除去するステップは、
前記本体の前記表面のサンド・ブラスト、グリット・ブラスト、ウェット・ブラスト、機械研削、又は機械研磨のうちの少なくとも1つによって、前記過剰な金属酸化物結合剤の前記バルクを除去するステップと、
前記金属酸化物結合剤の前記バルクを除去した後、前記バッフルの前記表面を、腐食性の酸を含む溶液にさらすステップをさらに含むことを特徴とする方法。 - 前記本体の前記表面から前記過剰な金属酸化物結合剤の前記バルクを除去するステップは、
前記表面から前記過剰な金属酸化物結合剤の前記バルクを除去し、前記本体の前記表面上における前記金属酸化物結合剤に対する窒化アルミニウムの比が、該本体内における前記比より大きいか又はこれと等しくなるようにするステップをさらに含むことを特徴とする請求項1に記載の方法。 - 前記金属酸化物結合剤は、酸化イットリウム又は酸化エルビウムのうちの少なくとも一方を含むことを特徴とする請求項1に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/195,127 | 2008-08-20 | ||
US12/195,127 US9222172B2 (en) | 2008-08-20 | 2008-08-20 | Surface treated aluminum nitride baffle |
PCT/US2009/054416 WO2010022212A2 (en) | 2008-08-20 | 2009-08-20 | Surface treated aluminum nitride baffle |
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CN (1) | CN102132382B (ja) |
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Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9222172B2 (en) * | 2008-08-20 | 2015-12-29 | Applied Materials, Inc. | Surface treated aluminum nitride baffle |
JP5728482B2 (ja) * | 2009-09-25 | 2015-06-03 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 誘導結合プラズマリアクタ内での高効率ガス解離のための方法及び装置 |
US8968537B2 (en) | 2011-02-09 | 2015-03-03 | Applied Materials, Inc. | PVD sputtering target with a protected backing plate |
US9388494B2 (en) | 2012-06-25 | 2016-07-12 | Novellus Systems, Inc. | Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region |
KR101419515B1 (ko) * | 2012-09-24 | 2014-07-15 | 피에스케이 주식회사 | 배플 및 배플의 표면처리장치, 그리고 기판 처리 장치 및 표면 처리 방법 |
US10316409B2 (en) * | 2012-12-21 | 2019-06-11 | Novellus Systems, Inc. | Radical source design for remote plasma atomic layer deposition |
US9399228B2 (en) * | 2013-02-06 | 2016-07-26 | Novellus Systems, Inc. | Method and apparatus for purging and plasma suppression in a process chamber |
US9745658B2 (en) | 2013-11-25 | 2017-08-29 | Lam Research Corporation | Chamber undercoat preparation method for low temperature ALD films |
US10741365B2 (en) * | 2014-05-05 | 2020-08-11 | Lam Research Corporation | Low volume showerhead with porous baffle |
US9551070B2 (en) * | 2014-05-30 | 2017-01-24 | Applied Materials, Inc. | In-situ corrosion resistant substrate support coating |
KR102339563B1 (ko) | 2014-06-02 | 2021-12-16 | 주식회사 미코세라믹스 | 플라즈마 화학기상증착 장치용 배플 구조물 및 이의 제조 방법 |
KR20160002059A (ko) * | 2014-06-30 | 2016-01-07 | 삼성전자주식회사 | 하드 마스크 제거 방법 |
US9966240B2 (en) | 2014-10-14 | 2018-05-08 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
US9355922B2 (en) | 2014-10-14 | 2016-05-31 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
US10573496B2 (en) | 2014-12-09 | 2020-02-25 | Applied Materials, Inc. | Direct outlet toroidal plasma source |
US10224210B2 (en) | 2014-12-09 | 2019-03-05 | Applied Materials, Inc. | Plasma processing system with direct outlet toroidal plasma source |
US9951421B2 (en) * | 2014-12-10 | 2018-04-24 | Lam Research Corporation | Inlet for effective mixing and purging |
US9728437B2 (en) | 2015-02-03 | 2017-08-08 | Applied Materials, Inc. | High temperature chuck for plasma processing systems |
US9828672B2 (en) | 2015-03-26 | 2017-11-28 | Lam Research Corporation | Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasma |
US10023956B2 (en) * | 2015-04-09 | 2018-07-17 | Lam Research Corporation | Eliminating first wafer metal contamination effect in high density plasma chemical vapor deposition systems |
US20160362782A1 (en) * | 2015-06-15 | 2016-12-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Gas dispenser and deposition apparatus using the same |
US9691645B2 (en) | 2015-08-06 | 2017-06-27 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
US9741593B2 (en) | 2015-08-06 | 2017-08-22 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
US10662529B2 (en) * | 2016-01-05 | 2020-05-26 | Applied Materials, Inc. | Cooled gas feed block with baffle and nozzle for HDP-CVD |
US9589846B1 (en) * | 2016-01-25 | 2017-03-07 | United Microelectronics Corp. | Method of forming semiconductor device |
US9758868B1 (en) | 2016-03-10 | 2017-09-12 | Lam Research Corporation | Plasma suppression behind a showerhead through the use of increased pressure |
US9850573B1 (en) | 2016-06-23 | 2017-12-26 | Applied Materials, Inc. | Non-line of sight deposition of erbium based plasma resistant ceramic coating |
US10604841B2 (en) | 2016-12-14 | 2020-03-31 | Lam Research Corporation | Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition |
US10211099B2 (en) | 2016-12-19 | 2019-02-19 | Lam Research Corporation | Chamber conditioning for remote plasma process |
US10409295B2 (en) * | 2016-12-31 | 2019-09-10 | Applied Materials, Inc. | Methods and apparatus for enhanced flow detection repeatability of thermal-based mass flow controllers (MFCS) |
US10975469B2 (en) | 2017-03-17 | 2021-04-13 | Applied Materials, Inc. | Plasma resistant coating of porous body by atomic layer deposition |
KR20180134182A (ko) * | 2017-06-08 | 2018-12-18 | 삼성전자주식회사 | 플라즈마 처리 장치 |
US20190131112A1 (en) * | 2017-10-30 | 2019-05-02 | Mattson Technology, Inc. | Inductively Coupled Plasma Wafer Bevel Strip Apparatus |
WO2019113351A1 (en) | 2017-12-07 | 2019-06-13 | Lam Research Corporation | Oxidation resistant protective layer in chamber conditioning |
US10760158B2 (en) | 2017-12-15 | 2020-09-01 | Lam Research Corporation | Ex situ coating of chamber components for semiconductor processing |
US12012653B2 (en) * | 2021-03-23 | 2024-06-18 | Applied Materials, Inc. | Cleaning assemblies for substrate processing chambers |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3078671B2 (ja) * | 1992-11-26 | 2000-08-21 | 日本碍子株式会社 | 耐蝕性部材、その使用方法およびその製造方法 |
JP3145519B2 (ja) * | 1992-12-28 | 2001-03-12 | 京セラ株式会社 | 窒化アルミニウム質焼結体 |
JPH06219844A (ja) * | 1993-01-27 | 1994-08-09 | Showa Denko Kk | AlN焼結体およびその製造方法 |
JPH10296610A (ja) * | 1997-04-28 | 1998-11-10 | Sony Corp | 研磨方法 |
JP2000086346A (ja) * | 1998-07-10 | 2000-03-28 | Sumitomo Electric Ind Ltd | セラミックス基材 |
US6383964B1 (en) * | 1998-11-27 | 2002-05-07 | Kyocera Corporation | Ceramic member resistant to halogen-plasma corrosion |
JP2001233676A (ja) * | 2000-02-23 | 2001-08-28 | Taiheiyo Cement Corp | プラズマ耐食部材及びその製造方法 |
JP2002031972A (ja) * | 2000-05-10 | 2002-01-31 | Sumitomo Electric Ind Ltd | トナー定着器用セラミックスヒータ及びその製造方法 |
WO2002083596A1 (fr) * | 2001-04-13 | 2002-10-24 | Sumitomo Electric Industries, Ltd. | Article ceramique assemble, structure de maintien de substrat et appareil permettant de traiter les substrats |
JP3973872B2 (ja) * | 2001-10-17 | 2007-09-12 | 住友大阪セメント株式会社 | 電極内蔵型サセプタ及びその製造方法 |
US7166166B2 (en) * | 2002-09-30 | 2007-01-23 | Tokyo Electron Limited | Method and apparatus for an improved baffle plate in a plasma processing system |
JP4529608B2 (ja) * | 2004-09-16 | 2010-08-25 | 株式会社村田製作所 | 超音波接合装置 |
US7552521B2 (en) * | 2004-12-08 | 2009-06-30 | Tokyo Electron Limited | Method and apparatus for improved baffle plate |
US7722719B2 (en) * | 2005-03-07 | 2010-05-25 | Applied Materials, Inc. | Gas baffle and distributor for semiconductor processing chamber |
JP2007042672A (ja) * | 2005-07-29 | 2007-02-15 | Ibiden Co Ltd | プラズマプロセス装置用チャンバー部材及びその製造方法 |
JP2008053390A (ja) * | 2006-08-23 | 2008-03-06 | Sumitomo Metal Electronics Devices Inc | 窒化アルミニウム多層基板 |
US7740706B2 (en) * | 2006-11-28 | 2010-06-22 | Applied Materials, Inc. | Gas baffle and distributor for semiconductor processing chamber |
US9222172B2 (en) * | 2008-08-20 | 2015-12-29 | Applied Materials, Inc. | Surface treated aluminum nitride baffle |
JP5789512B2 (ja) * | 2009-07-31 | 2015-10-07 | 電気化学工業株式会社 | Led搭載用ウエハとその製造方法、及びそのウエハを用いたled搭載構造体 |
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TWI480922B (zh) | 2015-04-11 |
JP2015146459A (ja) | 2015-08-13 |
JP2012500505A (ja) | 2012-01-05 |
SG193208A1 (en) | 2013-09-30 |
WO2010022212A3 (en) | 2010-05-14 |
WO2010022212A2 (en) | 2010-02-25 |
US20160145743A1 (en) | 2016-05-26 |
US10214815B2 (en) | 2019-02-26 |
CN102132382B (zh) | 2014-04-02 |
CN102132382A (zh) | 2011-07-20 |
US9222172B2 (en) | 2015-12-29 |
TW201017719A (en) | 2010-05-01 |
US20100048028A1 (en) | 2010-02-25 |
KR20110053360A (ko) | 2011-05-20 |
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