JP5751113B2 - 炭化珪素半導体装置の製造方法 - Google Patents
炭化珪素半導体装置の製造方法 Download PDFInfo
- Publication number
- JP5751113B2 JP5751113B2 JP2011211941A JP2011211941A JP5751113B2 JP 5751113 B2 JP5751113 B2 JP 5751113B2 JP 2011211941 A JP2011211941 A JP 2011211941A JP 2011211941 A JP2011211941 A JP 2011211941A JP 5751113 B2 JP5751113 B2 JP 5751113B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon carbide
- collector layer
- semiconductor device
- layer
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 107
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 105
- 239000004065 semiconductor Substances 0.000 title claims description 81
- 238000004519 manufacturing process Methods 0.000 title claims description 66
- 238000000034 method Methods 0.000 title claims description 62
- 210000000746 body region Anatomy 0.000 claims description 53
- 239000000758 substrate Substances 0.000 claims description 31
- 239000012535 impurity Substances 0.000 claims description 30
- 238000000151 deposition Methods 0.000 claims description 8
- 239000010410 layer Substances 0.000 description 181
- 238000000137 annealing Methods 0.000 description 22
- 230000003647 oxidation Effects 0.000 description 18
- 238000007254 oxidation reaction Methods 0.000 description 18
- 230000004913 activation Effects 0.000 description 17
- 239000011241 protective layer Substances 0.000 description 17
- 239000011229 interlayer Substances 0.000 description 14
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 12
- 239000007789 gas Substances 0.000 description 12
- 238000005468 ion implantation Methods 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000003213 activating effect Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- -1 for example Chemical compound 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910021334 nickel silicide Inorganic materials 0.000 description 2
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
Description
図1に示すように、本実施の形態の炭化珪素半導体装置100eは、プレーナゲート構造を有するnチャネル型IGBTである。炭化珪素半導体装置100eは、コレクタ層101eと、ドリフト層102と、ボディ領域103と、エミッタ領域104と、p+領域105と、ゲート絶縁膜108と、ゲート電極109と、層間絶縁膜110と、エミッタコンタクト電極112と、エミッタ配線113と、コレクタ電極114とを有する。
本実施の形態の炭化珪素半導体装置は、実施の形態1の炭化珪素半導体装置100eとほぼ同様のものである。その製造方法はおおよそステップS201〜S206(図12)によって行われる。製造方法の詳細について、以下に説明する。
図17に示すように、本実施の形態の炭化珪素半導体装置100iは、エピタキシャル成長によってアクセプタ型不純物が導入されたコレクタ層101eに代わって、イオン注入によってアクセプタ型不純物が導入されたコレクタ層101iを有する。これ以外の構成については、上述した実施の形態2の構成とほぼ同じであるため、同一または対応する要素について同一の符号を付し、その説明を繰り返さない。
図22に示すように、本実施の形態の炭化珪素半導体装置200eは、トレンチゲート構造を有するnチャネル型IGBTである。炭化珪素半導体装置200eは、実施の形態1と同様の、コレクタ層101eと、ドリフト層102と、コレクタ電極114とを有する。また炭化珪素半導体装置200eは、ボディ領域203と、エミッタ領域204と、p+領域205と、ゲート絶縁膜208と、ゲート電極209と、層間絶縁膜210と、エミッタコンタクト電極212と、エミッタ配線213とを有する。
(実施の形態5)
本実施の形態の炭化珪素半導体装置は、実施の形態4の炭化珪素半導体装置200e(図22)とほぼ同様のものである。その製造方法はおおよそステップS201〜S206(図12)によって行われる。具体的にはまず、ステップS201〜S203(図12)として、図15(実施の形態2)までと同様の工程が行われる。次に図33に示すように、ドリフト層102の上面側102Tの上に、実施の形態4と同様のボディ領域203およびエミッタ領域204が形成される(図12:ステップS204)。次に、ステップS205およびS206(図12)を含む工程として、図25以降(実施の形態4)と同様の工程が行われる。これにより炭化珪素半導体装置200eとほぼ同様の構成が得られる。
(実施の形態6)
図34に示すように、本実施の形態の炭化珪素半導体装置200iは、エピタキシャル成長によってアクセプタ型不純物が導入されたコレクタ層101eに代わって、イオン注入によってアクセプタ型不純物が導入されたコレクタ層101iを有する。これ以外の構成については、実施の形態5の炭化珪素半導体装置200e(図22)とほぼ同じであるため、同一または対応する要素について同一の符号を付し、その説明を繰り返さない。
今回開示された実施の形態はすべての点で例示であって、制限的なものではないと考えられるべきである。本発明の範囲は上記した説明ではなくて特許請求の範囲によって示され、特許請求の範囲と均等の意味、および範囲内でのすべての変更が含まれることが意図される。
Claims (6)
- n型を有する炭化珪素基板の上に、前記炭化珪素基板に面する底面側と前記底面側と反対の上面側とを有し、p型を有するコレクタ層を形成する工程と、
前記コレクタ層の前記上面側の上に、n型を有するドリフト層を形成する工程と、
前記ドリフト層の上に設けられp型を有するボディ領域と、前記ボディ領域によって前記ドリフト層から隔てられるように前記ボディ領域の上に設けられn型を有するエミッタ領域とを形成する工程と、
前記ドリフト層と前記エミッタ領域とをつなぐように前記ボディ領域の上にゲート絶縁膜を形成する工程と、
前記ゲート絶縁膜の上にゲート電極を形成する工程と、
前記炭化珪素基板を除去することによって前記コレクタ層の前記底面側を露出する工程とを備え、
前記コレクタ層の前記底面側を露出する工程は、前記ゲート電極を形成する工程の前に行われる、炭化珪素半導体装置の製造方法。 - 前記コレクタ層の前記底面側を露出する工程は、前記ゲート絶縁膜を形成する工程の前に行われる、請求項1に記載の炭化珪素半導体装置の製造方法。
- 前記コレクタ層の前記底面側を露出する工程は、前記コレクタ層の前記底面側の一部を除去する工程を含む、請求項1または請求項2に記載の炭化珪素半導体装置の製造方法。
- 前記コレクタ層を形成する工程は、炭化珪素を厚さ10μm以上堆積することによって行われる、請求項1〜請求項3のいずれか1項に記載の炭化珪素半導体装置の製造方法。
- 前記コレクタ層の前記底面側を露出する工程は、前記コレクタ層が厚さ5μm以上残存するように行われる、請求項1〜請求項4のいずれか1項に記載の炭化珪素半導体装置の製造方法。
- 前記コレクタ層を形成する工程は、濃度1×1017cm3以上1×1021cm3以下のアクセプタ型不純物を含有する炭化珪素を堆積することによって行われる、請求項1〜請求項5のいずれか1項に記載の炭化珪素半導体装置の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011211941A JP5751113B2 (ja) | 2011-09-28 | 2011-09-28 | 炭化珪素半導体装置の製造方法 |
EP12836177.1A EP2763176A4 (en) | 2011-09-28 | 2012-08-15 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE OF SILICON CARBIDE |
PCT/JP2012/070738 WO2013046977A1 (ja) | 2011-09-28 | 2012-08-15 | 炭化珪素半導体装置の製造方法 |
CN201280042349.0A CN103782389B (zh) | 2011-09-28 | 2012-08-15 | 制造碳化硅半导体器件的方法 |
US13/613,858 US8765562B2 (en) | 2011-09-28 | 2012-09-13 | Method for manufacturing silicon carbide semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011211941A JP5751113B2 (ja) | 2011-09-28 | 2011-09-28 | 炭化珪素半導体装置の製造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015048121A Division JP2015130528A (ja) | 2015-03-11 | 2015-03-11 | 炭化珪素半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013074097A JP2013074097A (ja) | 2013-04-22 |
JP5751113B2 true JP5751113B2 (ja) | 2015-07-22 |
Family
ID=47911710
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011211941A Expired - Fee Related JP5751113B2 (ja) | 2011-09-28 | 2011-09-28 | 炭化珪素半導体装置の製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8765562B2 (ja) |
EP (1) | EP2763176A4 (ja) |
JP (1) | JP5751113B2 (ja) |
CN (1) | CN103782389B (ja) |
WO (1) | WO2013046977A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20170018634A1 (en) * | 2011-10-26 | 2017-01-19 | Anvil Semiconductors Limited | 3C-SiC IGBT |
JP5811829B2 (ja) * | 2011-12-22 | 2015-11-11 | 住友電気工業株式会社 | 半導体装置の製造方法 |
US20150044840A1 (en) * | 2012-03-30 | 2015-02-12 | Hitachi, Ltd. | Method for producing silicon carbide semiconductor device |
US9570570B2 (en) * | 2013-07-17 | 2017-02-14 | Cree, Inc. | Enhanced gate dielectric for a field effect device with a trenched gate |
US20160056283A1 (en) * | 2014-08-21 | 2016-02-25 | Kabushiki Kaisha Toshiba | Semiconductor device and method for manufacturing the same |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005175174A (ja) * | 2003-12-10 | 2005-06-30 | Shindengen Electric Mfg Co Ltd | 絶縁ゲート型バイポーラトランジスタの製造方法 |
JP2005303218A (ja) * | 2004-04-16 | 2005-10-27 | Renesas Technology Corp | 半導体装置およびその製造方法 |
US8329563B2 (en) | 2006-02-24 | 2012-12-11 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device including a gettering layer and manufacturing method therefor |
US8866150B2 (en) * | 2007-05-31 | 2014-10-21 | Cree, Inc. | Silicon carbide power devices including P-type epitaxial layers and direct ohmic contacts |
JP2009130266A (ja) * | 2007-11-27 | 2009-06-11 | Toshiba Corp | 半導体基板および半導体装置、半導体装置の製造方法 |
JP2009231574A (ja) * | 2008-03-24 | 2009-10-08 | Sanken Electric Co Ltd | SiC半導体素子とその製造方法並びにその製造装置 |
JP2011035257A (ja) * | 2009-08-04 | 2011-02-17 | Showa Denko Kk | 炭化珪素半導体装置の製造方法 |
JP5699628B2 (ja) * | 2010-07-26 | 2015-04-15 | 住友電気工業株式会社 | 半導体装置 |
-
2011
- 2011-09-28 JP JP2011211941A patent/JP5751113B2/ja not_active Expired - Fee Related
-
2012
- 2012-08-15 EP EP12836177.1A patent/EP2763176A4/en not_active Withdrawn
- 2012-08-15 WO PCT/JP2012/070738 patent/WO2013046977A1/ja active Application Filing
- 2012-08-15 CN CN201280042349.0A patent/CN103782389B/zh not_active Expired - Fee Related
- 2012-09-13 US US13/613,858 patent/US8765562B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20130078771A1 (en) | 2013-03-28 |
EP2763176A4 (en) | 2015-06-10 |
JP2013074097A (ja) | 2013-04-22 |
CN103782389B (zh) | 2017-02-15 |
WO2013046977A1 (ja) | 2013-04-04 |
CN103782389A (zh) | 2014-05-07 |
US8765562B2 (en) | 2014-07-01 |
EP2763176A1 (en) | 2014-08-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9136378B2 (en) | Semiconductor device and manufacturing method for same | |
JP6032831B2 (ja) | SiC半導体装置及びその製造方法 | |
US8564017B2 (en) | Silicon carbide semiconductor device and method for manufacturing same | |
JP2012253293A (ja) | 半導体装置 | |
JP5751113B2 (ja) | 炭化珪素半導体装置の製造方法 | |
JP2014107420A (ja) | 炭化珪素半導体装置およびその製造方法 | |
JP5676923B2 (ja) | 半導体装置の製造方法および半導体装置 | |
JP2014063949A (ja) | 炭化珪素半導体装置およびその製造方法 | |
JP2014090057A (ja) | 炭化珪素半導体装置 | |
JP5797266B2 (ja) | 炭化珪素半導体装置及び炭化珪素半導体装置の製造方法 | |
JP5802492B2 (ja) | 半導体素子及びその製造方法 | |
US9806167B2 (en) | Method for manufacturing silicon carbide semiconductor device | |
US8772139B2 (en) | Method of manufacturing semiconductor device | |
JP2012109348A (ja) | 炭化珪素半導体装置 | |
JP5742712B2 (ja) | 炭化珪素半導体装置の製造方法 | |
JP2013131512A (ja) | 半導体装置およびその製造方法 | |
JP2015130528A (ja) | 炭化珪素半導体装置の製造方法 | |
US8866156B2 (en) | Silicon carbide semiconductor device and method for manufacturing same | |
JP6229443B2 (ja) | 炭化珪素半導体装置およびその製造方法 | |
JP2014033031A (ja) | 炭化珪素半導体装置およびその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20140325 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150210 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150311 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150421 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150504 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5751113 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |