JP5743788B2 - Heat treatment equipment - Google Patents

Heat treatment equipment Download PDF

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JP5743788B2
JP5743788B2 JP2011166964A JP2011166964A JP5743788B2 JP 5743788 B2 JP5743788 B2 JP 5743788B2 JP 2011166964 A JP2011166964 A JP 2011166964A JP 2011166964 A JP2011166964 A JP 2011166964A JP 5743788 B2 JP5743788 B2 JP 5743788B2
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lid
heat treatment
heat
insulating material
processing container
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JP2013030676A (en
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池 浩 菊
池 浩 菊
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)

Description

本発明は、熱処理炉を備えた熱処理装置に関する。   The present invention relates to a heat treatment apparatus including a heat treatment furnace.

半導体装置の製造においては、被処理体である半導体ウエハに酸化、拡散、ＣＶＤ（Chemical Vapor Deposition）などの処理を施すために、各種の熱処理装置が用いられている。そして、その一般的な熱処理装置は、下部に炉口を有し半導体ウエハを収容して熱処理するための処理容器と、この処理容器の周囲を覆うように設けられた断熱材と、断熱材の内周面に設けられ処理容器内のウエハを加熱するヒータとを有する熱処理炉と、処理容器の炉口を閉塞する蓋体と、蓋体上に載置され被処理体を多段に保持する保持具と、蓋体を昇降させる昇降機構とを備えている。   In the manufacture of semiconductor devices, various heat treatment apparatuses are used to perform processes such as oxidation, diffusion, and CVD (Chemical Vapor Deposition) on a semiconductor wafer that is an object to be processed. And the general heat treatment apparatus has a furnace opening in the lower part, a processing container for accommodating and heat-treating a semiconductor wafer, a heat insulating material provided so as to cover the periphery of the processing container, and a heat insulating material A heat treatment furnace provided on the inner peripheral surface and having a heater for heating the wafer in the processing vessel, a lid for closing the furnace port of the processing vessel, and a holder placed on the lid for holding the object to be processed in multiple stages And a lifting mechanism that lifts and lowers the lid.

上記ヒータはヒータエレメントを有し、このヒータエレメントとしては、例えばバッチ処理が可能な熱処理装置の場合でいうと、円筒状の断熱材の内壁面に沿って配置される螺旋状のものが用いられ、炉内を例えば８００〜１０００℃程度に高温に加熱することができる。また、上記断熱材としては、例えばセラミックファイバ等からなる断熱材料を円筒状に焼成してなるものが用いられ、輻射熱および伝導熱として奪われる熱量を減少させて効率のよい加熱を助長することができる。   The heater has a heater element. As the heater element, for example, in the case of a heat treatment apparatus capable of batch processing, a spiral element arranged along the inner wall surface of a cylindrical heat insulating material is used. The inside of the furnace can be heated to a high temperature of about 800 to 1000 ° C., for example. In addition, as the heat insulating material, for example, a heat insulating material made of a ceramic fiber or the like is fired into a cylindrical shape, and the amount of heat taken as radiant heat and conduction heat is reduced to promote efficient heating. it can.

ところで、従来の熱処理装置において、処理容器内をヒータにより加熱しながら、処理容器内に処理ガスを供給し、その後処理容器内を真空引きする工程が繰り返される。このように処理容器内に処理ガスを供給し、処理容器内を真空引きすることにより、半導体ウエハに対する熱処理が施される。   By the way, in the conventional heat treatment apparatus, a process gas is supplied into the process container while the process container is heated by a heater, and then the process of evacuating the process container is repeated. In this way, the processing gas is supplied into the processing container and the processing container is evacuated to heat-treat the semiconductor wafer.

ところで、従来より熱処理の対象となる半導体ウエハは、直径３００ｍｍのものが一般的であった。しかしながら、近年は直径４５０ｍｍの大型の半導体ウエハも用いられるようになっている。   By the way, conventionally, a semiconductor wafer to be heat-treated is generally 300 mm in diameter. However, in recent years, a large semiconductor wafer having a diameter of 450 mm has been used.

直径４５０ｍｍの大型の半導体ウエハを熱処理する場合、処理容器および熱処理炉も大型化され、このように熱処理炉が大型化されると、炉口を閉塞する蓋体も大型化することになる。   When heat treating a large semiconductor wafer having a diameter of 450 mm, the processing vessel and the heat treatment furnace are also enlarged, and when the heat treatment furnace is enlarged as described above, the lid for closing the furnace port is also enlarged.

上述のように処理容器内では、熱処理作業中、処理ガスの供給および真空引きが行なわれるが、蓋体が大型化した場合、とりわけ処理容器内の真空時に蓋体に大きな圧力がかかることになる。   As described above, the processing gas is supplied and evacuated during the heat treatment operation in the processing container as described above. However, when the lid is enlarged, a large pressure is applied to the lid particularly during vacuum in the processing container. .

この場合、蓋体の強度を保つため、蓋体の肉厚を大きくすることも考えられるが、これでは蓋体の重量が増加してしまい、蓋体の昇降作業にも支障が生じてしまう。   In this case, in order to maintain the strength of the lid, it is conceivable to increase the thickness of the lid, but this increases the weight of the lid and also hinders the lifting and lowering operation of the lid.

特開２００８−２６３１７０号公報JP 2008-263170 A

本発明は、このような点を考慮してなされたものであり、処理されるべき被処理体が大型化した場合であっても、蓋体の肉厚を過度に厚くすることなく、蓋体をスムースに昇降することができる熱処理装置を提供することを目的とする。   The present invention has been made in consideration of such points, and even when the object to be processed is increased in size, the lid body does not excessively increase the thickness of the lid body. An object of the present invention is to provide a heat treatment apparatus capable of smoothly moving up and down.

本発明は、下部に炉口を有し被処理体を収容して熱処理するための縦型の円筒状処理容器と、処理容器の周囲を覆う断熱材と、断熱材の内周面に設けられたヒータとを有する熱処理炉と、上記処理容器の炉口を閉塞する蓋体と、該蓋体上に載置され被処理体を多段に保持する保持具と、蓋体を昇降させて蓋体により炉口を開閉するとともに上記処理容器内へ保持具を搬入しかつ搬出する昇降機構と備え、上記蓋体は下方へ向って突出する湾曲板からなり、上記蓋体は、５５０〜７５０ｍｍの直径を有することを特徴とする熱処理装置である。 The present invention is provided in a vertical cylindrical processing container having a furnace port at the lower part for accommodating a heat treatment object and heat-treating, a heat insulating material covering the periphery of the processing container, and an inner peripheral surface of the heat insulating material. A heat treatment furnace having a heater, a lid that closes the furnace port of the processing vessel, a holder that is placed on the lid and holds the object to be processed in multiple stages, and a lid that moves the lid up and down And a lifting mechanism for loading and unloading the holding tool into and out of the processing container, the lid body is formed of a curved plate protruding downward, and the lid body has a diameter of 550 to 750 mm. It is the heat processing apparatus characterized by having .

本発明は、上記蓋体は５ｍｍ以上の厚みを有することを特徴とする熱処理装置である。   The present invention is the heat treatment apparatus, wherein the lid body has a thickness of 5 mm or more.

本発明は、上記蓋体は曲率をもっていることを特徴とする熱処理装置である。   The present invention is the heat treatment apparatus characterized in that the lid body has a curvature.

本発明によれば、蓋体は下方へ向って突出する湾曲板からなるため、平板状の蓋体に比べて、真空時に蓋体に加わる応力を小さく抑えることができ、このことにより蓋体の肉厚を過度に増加させる必要はなく、蓋体の重量増加を抑えることができる。   According to the present invention, since the lid body is composed of a curved plate that protrudes downward, the stress applied to the lid body during vacuum can be reduced compared to a flat lid body. It is not necessary to increase the wall thickness excessively, and an increase in the weight of the lid can be suppressed.

図１は本発明の実施の形態である熱処理装置を概略的に示す縦断面図。FIG. 1 is a longitudinal sectional view schematically showing a heat treatment apparatus according to an embodiment of the present invention. 図２は熱処理装置を示す横断面図。FIG. 2 is a transverse sectional view showing a heat treatment apparatus. 図３は熱処理装置を示す拡大縦断面図。FIG. 3 is an enlarged longitudinal sectional view showing a heat treatment apparatus. 図４はヒータエレメントを示す平面図。FIG. 4 is a plan view showing the heater element. 図５はヒータエレメントを示す側面図。FIG. 5 is a side view showing the heater element. 図６（ａ）は断熱材を示す横断面図、図６（ｂ）は断熱材を示す縦断面図。Fig.6 (a) is a cross-sectional view which shows a heat insulating material, FIG.6 (b) is a longitudinal cross-sectional view which shows a heat insulating material. 図７は熱処理装置の蓋体近傍を示す拡大断面図。FIG. 7 is an enlarged cross-sectional view showing the vicinity of the lid of the heat treatment apparatus. 図８は蓋体の形状と蓋体に加わるたわみ量との関係を示す図。FIG. 8 is a diagram showing the relationship between the shape of the lid and the amount of deflection applied to the lid.

以下に、本発明を実施するための最良の形態について、添付図面を参照して説明する。   The best mode for carrying out the present invention will be described below with reference to the accompanying drawings.

図１および図７において、符号１は半導体製造装置の一つである縦型の熱処理装置であり、この熱処理装置１は、被処理体例えば半導体ウエハＷを一度に多数枚収容して酸化、拡散、減圧ＣＶＤ等の熱処理を施すことができ、下部に炉口３ａが形成された縦型の円筒状処理容器３と、該処理容器３の周囲を覆うように設けられた円筒状の断熱材１６と、断熱材１６の内周面に設けられウエハＷを加熱するヒータ５とを有する熱処理炉２と、処理容器３の炉口３ａを閉塞する蓋体１０と、蓋体１０上に保温筒１１を介して載置され半導体ウエハＷを多段に保持するボート（保持具）１２とを備えている。   1 and 7, reference numeral 1 denotes a vertical heat treatment apparatus which is one of semiconductor manufacturing apparatuses. This heat treatment apparatus 1 accommodates a large number of objects to be processed, for example, semiconductor wafers W at a time, and oxidizes and diffuses them. , A vertical cylindrical processing vessel 3 having a furnace port 3a formed in the lower portion thereof, and a cylindrical heat insulating material 16 provided so as to cover the periphery of the processing vessel 3. And a heat treatment furnace 2 having a heater 5 provided on the inner peripheral surface of the heat insulating material 16 for heating the wafer W, a lid body 10 for closing the furnace port 3a of the processing vessel 3, and a heat insulating cylinder 11 on the lid body 10. And a boat (holding tool) 12 that holds the semiconductor wafers W in multiple stages.

また熱処理装置１は、断熱材１６を設置するためのベースプレート６を備えている。このベースプレート６には処理容器３を下方から上方に挿入するための開口部７が形成されており、この開口部７にはベースプレート６と処理容器３との間の隙間を覆うように図示しない断熱材が設けられている。   The heat treatment apparatus 1 also includes a base plate 6 for installing a heat insulating material 16. The base plate 6 is formed with an opening 7 for inserting the processing container 3 from below to above, and the opening 7 has a heat insulation (not shown) so as to cover the gap between the base plate 6 and the processing container 3. Material is provided.

上記処理容器３は、石英製からなり、上端が閉塞され、上述のように下部が炉口３ａとして開口された縦長の円筒状に形成されている。処理容器３の下部の開口端には外向きのフランジ３ｂが形成され、フランジ３ｂは図示しないフランジ押えを介して上記ベースプレート６に支持されている。また処理容器３には、処理ガスや不活性ガス等を処理容器３内に導入する導入ポート（導入口）８及び処理容器３内のガスを排気するための排気ポート（排気口）８Ａが設けられている。導入ポート８にはガス供給源が接続され、排気ポート８Ａには例えば１０〜１０−８Ｔｏｒｒ程度に減圧制御が可能な真空ポンプを備えた排気系が接続されている。 The processing vessel 3 is made of quartz, is formed in a vertically long cylindrical shape with the upper end closed and the lower portion opened as the furnace port 3a as described above. An outward flange 3b is formed at the open end of the lower portion of the processing container 3, and the flange 3b is supported by the base plate 6 via a flange presser (not shown). Further, the processing vessel 3 is provided with an introduction port (introduction port) 8 for introducing a processing gas, an inert gas or the like into the processing vessel 3 and an exhaust port (exhaust port) 8A for exhausting the gas in the processing vessel 3. It has been. The introduction port 8 is connected to a gas supply source, and the exhaust port 8A is connected to an exhaust system including a vacuum pump capable of controlling pressure reduction to about 10 to 10 −8 Torr, for example.

また円筒状処理容器３の下方には、処理容器３の下端開口部（炉口）３ａを密封シール１０Ａを介して閉塞する蓋体１０が設けられ、この蓋体１０は昇降機構１３により昇降移動可能となっている。この蓋体１０の上部には、上述のように保温手段である例えば保温筒１１が載置され、該保温筒１１の上部には例えば直径が４５０ｍｍのウエハＷを多数枚例えば１００〜１５０枚程度上下方向に所定の間隔で搭載する保持具である石英製のボート１２が載置されている。蓋体１０には、ボート１２をその軸心回りに回転する回転機構１３Ａが設けられている。ボート１２は、昇降機構１３により駆動される蓋体１０の下降移動により処理容器３内から下方のローディングエリア内に搬出（アンロード）され、ウエハＷの移替え後、昇降装置１３により駆動される蓋体１０の上昇移動により処理容器３内に搬入（ロード）される。   Further, a lid body 10 is provided below the cylindrical processing container 3 to close the lower end opening (furnace port) 3a of the processing container 3 through a hermetic seal 10A. It is possible. As described above, for example, the heat retaining cylinder 11 serving as the heat retaining means is placed on the upper portion of the lid body 10, and a large number of wafers W having a diameter of 450 mm, for example, about 100 to 150 are disposed on the heat retaining cylinder 11. A quartz boat 12, which is a holder mounted at predetermined intervals in the vertical direction, is placed. The lid body 10 is provided with a rotation mechanism 13A that rotates the boat 12 around its axis. The boat 12 is unloaded from the processing container 3 into the lower loading area by the downward movement of the lid 10 driven by the lifting mechanism 13, and is driven by the lifting device 13 after the wafer W is transferred. The lid 10 is moved (loaded) into the processing container 3 by the upward movement of the lid 10.

ところで、図１および図７に示すように、蓋体１０は下方へ向って突出する湾曲板からなっている。処理容器１０はステンレス等の耐食性金属製の円筒体からなり、これに対応して蓋体もステンレス等の耐食性金属製の湾曲板からなり、平面からみて円板形状をもつ。   By the way, as shown in FIG. 1 and FIG. 7, the lid body 10 is composed of a curved plate protruding downward. The processing container 10 is made of a cylindrical body made of corrosion-resistant metal such as stainless steel. Correspondingly, the cover body is made of a curved plate made of corrosion-resistant metal such as stainless steel and has a disk shape when viewed from the plane.

蓋体１０の上面には、蓋体１０の上面を研削することにより形成された平坦部１０ａが設けられ、保温筒１１はこの蓋体１０の平坦部１０ａ上に載置されている。   A flat portion 10 a formed by grinding the upper surface of the lid body 10 is provided on the upper surface of the lid body 10, and the heat insulating cylinder 11 is placed on the flat portion 10 a of the lid body 10.

上述のように、被処理体となる半導体ウエハＷは４５０ｍｍの直径をもつ大型のものであり、この大型の半導体ウエハＷに対応して蓋体１０も５５０〜７５０ｍｍ前後の直径をもつ。また蓋体１０は５ｍｍ以上の厚みをもち、曲率をもった湾曲板からなる。   As described above, the semiconductor wafer W to be processed is a large wafer having a diameter of 450 mm, and the lid 10 also has a diameter of about 550 to 750 mm corresponding to the large semiconductor wafer W. The lid 10 is a curved plate having a thickness of 5 mm or more and a curvature.

このように、蓋体１０が下方へ向って突出する湾曲板からなるため、例えば平板状の蓋体に比べて、とりわけ処理容器３内を真空引きした場合に、蓋体１０に加わる応力を小さく抑えることができる。   Thus, since the lid body 10 is composed of a curved plate that protrudes downward, the stress applied to the lid body 10 is reduced particularly when the inside of the processing vessel 3 is evacuated, compared to a flat lid body, for example. Can be suppressed.

このため蓋体１０として５５０〜７５０ｍｍ前後の直径をもつ大きな湾曲板を用いた場合であっても、処理容器３内を真空引きした際、蓋体１０に加わる応力を小さく抑えることができ、蓋体１０を過度に厚肉とする必要はない。   For this reason, even when a large curved plate having a diameter of about 550 to 750 mm is used as the lid 10, the stress applied to the lid 10 can be kept small when the inside of the processing container 3 is evacuated. The body 10 need not be excessively thick.

このため蓋体１０の重量を大きくすることなく、また昇降機構１３により蓋体１０をスムースに上下移動させることができる。   Therefore, the lid 10 can be smoothly moved up and down by the lifting mechanism 13 without increasing the weight of the lid 10.

次に断熱材１６および断熱材１６の内周面に設けられたヒータ５について述べる。断熱材１６の内周面に軸方向（図示例では上下方向）に多段に形成された溝状の棚部１７が形成され、各棚部１７に沿ってヒータエレメント１８が配置され、このヒータエレメント１８によりヒータ５が構成される。断熱材１６は、例えばシリカ、アルミナあるいは珪酸アルミナを含む無機質繊維からなっている。断熱材１６は、縦に二分割され、ヒータエレメント１８の組付を容易にしている。   Next, the heat insulating material 16 and the heater 5 provided on the inner peripheral surface of the heat insulating material 16 will be described. Groove-shaped shelf portions 17 formed in multiple stages in the axial direction (vertical direction in the illustrated example) are formed on the inner peripheral surface of the heat insulating material 16, and heater elements 18 are arranged along the respective shelf portions 17. The heater 5 is constituted by 18. The heat insulating material 16 is made of, for example, inorganic fibers containing silica, alumina, or silicate alumina. The heat insulating material 16 is vertically divided into two to facilitate the assembly of the heater element 18.

ヒータエレメント１８は、帯状の発熱抵抗体を波形に成形（折り曲げ加工）して成る。   The heater element 18 is formed by forming (bending) a band-shaped heating resistor into a waveform.

上記断熱材１６には上記ヒータエレメント１８を適宜間隔で径方向に移動可能に且つ棚部１７から脱落ないし脱出しないように保持するピン部材２０が配設されている。上記円筒状の断熱材１６の内周面にはこれと同心の環状の溝部２１が軸方向に所定ピッチで多段に形成され、隣り合う上部の溝部２１と下部の溝部２１との間に周方向に連続した環状の上記棚部１７が形成されている。   The heat insulating material 16 is provided with a pin member 20 that holds the heater element 18 in a radial direction at appropriate intervals and holds the heater element 18 so as not to drop off or escape from the shelf portion 17. On the inner peripheral surface of the cylindrical heat insulating material 16, concentric annular grooves 21 are formed in multiple stages at a predetermined pitch in the axial direction, and between the adjacent upper grooves 21 and lower grooves 21 in the circumferential direction. An annular shelf 17 that is continuous to each other is formed.

上記ピン部材２０は、ヒータエレメント１８の内周面の谷部１８ｂを基部２０ａで支持すべく側面コ字状に形成され、その両脚部２０ｂが断熱材１６を内側から外側に貫通し、該両脚部２０ｂの端部２０ｃが互いに離反する方向に折り曲げられて断熱材１６の外周面に係止されている。   The pin member 20 is formed in a side U shape so that the valley portion 18b of the inner peripheral surface of the heater element 18 is supported by the base portion 20a, and both the leg portions 20b penetrate the heat insulating material 16 from the inside to the outside. The end 20c of the portion 20b is bent in a direction away from each other and is locked to the outer peripheral surface of the heat insulating material 16.

また、ヒータエレメント１８のうち複数段ごとの各グループの最下段の始端１８ｅと最上段の終端１８ｒとに電極接続用の端子板２２がそれぞれ接続されている。これにより、ヒータ５は熱処理炉２内を上下方向に複数のゾーンに分けて温度制御ができるように構成されている。   Also, electrode connection terminal plates 22 are respectively connected to the lowermost start end 18e and uppermost end 18r of each group of the heater elements 18. Accordingly, the heater 5 is configured to be able to control the temperature by dividing the inside of the heat treatment furnace 2 into a plurality of zones in the vertical direction.

ヒータエレメント１８の接続（結線）パターンとしては、例えば図４ないし図５に示すものが考えられる。この接続パターンにおいては、各段のヒータエレメント１８の両端１８、１８ｆ、１８ｇ…１８ｒが径方向外方に突出するように折り曲げられており、一段目（最下段）始端（右端）１８ｅと、最上段の終端（左端）１８ｒに端子板２２、２２がそれぞれ接合されている。そして、上下に隣接するヒータエレメント１８を直列に接続すべく端部同士例えば一段目の終端１８ｆと二段目の始端１８ｇとが接続板２３を介して接続され、二段目の終端１８ｈと三段目の始端１８ｉとが接続板２３を介して接続される。   As the connection (connection) pattern of the heater element 18, for example, the patterns shown in FIGS. In this connection pattern, both ends 18, 18 f, 18 g... 18 r of the heater elements 18 at each stage are bent so as to protrude outward in the radial direction, and the first stage (lowermost stage) starting end (right end) 18 e, Terminal plates 22 and 22 are joined to the upper end (left end) 18r, respectively. Then, in order to connect the heater elements 18 adjacent to each other in series, the end portions, for example, the first stage end 18f and the second stage end 18g are connected via the connection plate 23, and the second stage end 18h and the third stage end 18h The starting end 18 i of the stage is connected via the connection plate 23.

断熱材１６の形状を保持すると共に断熱材１６を補強するために、図１に示すように、断熱材１６の外周面は金属製例えばステンレス製の外皮（アウターシェル）２８で覆われている。また、外部への熱影響を抑制するために、外皮２８の外周面は水冷ジャケット３０で覆われている。断熱材１６の頂部にはこれを覆う上部断熱材３１が設けられ、この上部断熱材３１の上部には外皮２８の頂部（上端部）を覆うステンレス製の天板３２が設けられている。   In order to maintain the shape of the heat insulating material 16 and reinforce the heat insulating material 16, the outer peripheral surface of the heat insulating material 16 is covered with a metal outer skin (outer shell) 28, for example, as shown in FIG. Further, the outer peripheral surface of the outer skin 28 is covered with a water cooling jacket 30 in order to suppress the influence of heat to the outside. An upper heat insulating material 31 that covers the top of the heat insulating material 16 is provided, and a stainless steel top plate 32 that covers the top (upper end) of the outer skin 28 is provided on the upper heat insulating material 31.

また熱処理後にウエハを急速降温させて処理の迅速化ないしスループットの向上を図るために、断熱材１６には、断熱材１６と処理容器３との間の空間３３内の雰囲気を外部に排出する排熱系３５と、上記空間３３内に冷却媒体を導入して強制的に冷却する強制冷却手段３６とが設けられている。上記排熱系３５は、例えば断熱材１６の上部に設けられた排気口３７と、該排気口３７と図示しない工場排気系とを結ぶ図示しない排熱管とから構成されている。排熱管には図示しない排気ブロワ及び熱交換器が設けられている。   In addition, in order to speed up the processing and improve the throughput by rapidly cooling the wafer after the heat treatment, the heat insulating material 16 includes an exhaust for discharging the atmosphere in the space 33 between the heat insulating material 16 and the processing container 3 to the outside. A heat system 35 and a forced cooling means 36 for forcibly cooling the space 33 by introducing a cooling medium are provided. The exhaust heat system 35 includes, for example, an exhaust port 37 provided in the upper portion of the heat insulating material 16 and an unshown exhaust heat pipe connecting the exhaust port 37 and a factory exhaust system (not shown). The exhaust heat pipe is provided with an exhaust blower and a heat exchanger (not shown).

上記強制冷却手段３６は、上記断熱材１６と外皮２８の間に高さ方向に複数形成された環状流路３８と、各環状流路３８から断熱材１６の中心斜め方向へ冷却媒体を吹き出して上記空間３３の周方向に旋回流を生じさせるべく断熱材１６に設けられた強制冷却用冷却媒体吹出し孔４０とを有している。上記環状流路３８は、断熱材１６の外周面に帯状又は環状の断熱材４１を貼り付けるか、或いは断熱材１６の外周面を環状に削ることにより形成されている。上記冷却媒体吹出し孔４０は、図６（ａ）、（ｂ）に示すように断熱材１６における上下に隣接するヒータエレメント１８の間である棚部１７にこれを径方向の内外に貫通するように形成されていることが好ましい。このように冷却媒体吹出し孔４０を棚部１７に設けることにより、ヒータエレメント１８に邪魔されることなく冷却媒体を上記空間３３に噴出することができる。   The forced cooling means 36 blows out a cooling medium in a direction oblique to the center of the heat insulating material 16 from the annular flow channels 38 formed in a plurality in the height direction between the heat insulating material 16 and the outer skin 28. The cooling medium outlet hole 40 for forced cooling is provided in the heat insulating material 16 so as to generate a swirling flow in the circumferential direction of the space 33. The annular flow path 38 is formed by attaching a belt-like or annular heat insulating material 41 to the outer peripheral surface of the heat insulating material 16 or by cutting the outer peripheral surface of the heat insulating material 16 into an annular shape. As shown in FIGS. 6 (a) and 6 (b), the cooling medium outlet hole 40 penetrates the shelf 17 between the heater elements 18 adjacent to each other in the heat insulating material 16 inward and outward in the radial direction. It is preferable to be formed. By providing the cooling medium outlet hole 40 in the shelf 17 in this way, the cooling medium can be ejected into the space 33 without being obstructed by the heater element 18.

上記外皮２８の外周面には、各環状流路３８に冷却媒体を分配供給するための共通の１本の供給ダクト４９が高さ方向に沿って設けられ、外皮２８には供給ダクト内と各環状流路３８とを連通する連通口が形成されている。供給ダクト４９には冷却媒体を吸引し、圧送供給する図示しない冷却媒体供給源（例えば送風機）が開閉バルブを介して接続されている。   A common supply duct 49 for distributing and supplying the cooling medium to each annular flow path 38 is provided on the outer peripheral surface of the outer skin 28 along the height direction. A communication port that communicates with the annular flow path 38 is formed. A cooling medium supply source (for example, a blower) (not shown) is connected to the supply duct 49 via an open / close valve to suck and supply the cooling medium by pressure.

なお、冷却媒体としては、空気、窒素、水等が考えられる。   In addition, air, nitrogen, water, etc. can be considered as a cooling medium.

次にこのような構成からなる本実施の形態の作用について説明する。   Next, the operation of the present embodiment having such a configuration will be described.

まずローディングエリア内においてボート１２内にウエハＷが移載され、次に蓋体１０が、昇降機構１３により上昇し、保温筒１１およびボート１２が処理容器３内に挿入され、その後処理容器３の炉口３ａが蓋体１０により閉塞される。このとき処理容器３のフランジ３ｂと蓋体１０との間に密封シール１０Ａが介在され、処理容器３の炉口３ａを蓋体１０により確実に閉塞することができる。   First, the wafer W is transferred into the boat 12 within the loading area, and then the lid body 10 is raised by the elevating mechanism 13, and the heat insulating cylinder 11 and the boat 12 are inserted into the processing container 3, and then the processing container 3. The furnace port 3 a is closed by the lid body 10. At this time, a hermetic seal 10 </ b> A is interposed between the flange 3 b of the processing container 3 and the lid body 10, and the furnace port 3 a of the processing container 3 can be reliably closed by the lid body 10.

次にヒータエレメント１８からなるヒータ５が作動し、同時に排熱系３５および強制冷却手段３６が駆動されて、処理容器３内の温度制御が行なわれる。   Next, the heater 5 including the heater element 18 is activated, and at the same time, the exhaust heat system 35 and the forced cooling means 36 are driven to control the temperature in the processing container 3.

また、処理容器３内には、以下のような手順で、処理ガスが供給される。   Further, processing gas is supplied into the processing container 3 in the following procedure.

すなわち、まず処理容器３内を温度制御しながら、導入ポート８から処理ガスが処理容器３内に供給され、ウエハＷに対して所望の熱処理が施される。このとき、蓋体１０に設けられている回転機構１３Ａによりボート１２が処理容器３内で回転する。   That is, first, while controlling the temperature inside the processing container 3, a processing gas is supplied from the introduction port 8 into the processing container 3, and a desired heat treatment is performed on the wafer W. At this time, the boat 12 rotates in the processing container 3 by the rotation mechanism 13 </ b> A provided in the lid 10.

次に処理容器３内のガスが排気ポート８Ａから排気され、処理容器３内が真空状態となるまで減圧される。   Next, the gas in the processing container 3 is exhausted from the exhaust port 8A, and the pressure is reduced until the processing container 3 is in a vacuum state.

このようにしてウエハＷに対する所望の処理ガスによる熱処理が施され、次にウエハに対して更なる処理ガスによる熱処理が施される。   In this way, the wafer W is heat-treated with a desired process gas, and then the wafer is further heat-treated with a process gas.

すなわち処理容器３に対して上述した温度制御が繰り返され、導入ポート８から別の処理ガスが処理容器３内に供給され、ウエハＷに対する更なる熱処理が施される。   That is, the above-described temperature control is repeated for the processing container 3, another processing gas is supplied from the introduction port 8 into the processing container 3, and further heat treatment is performed on the wafer W.

このようにしてウエハＷに対する熱処理が終了すると、昇降機構１３により蓋体１０が降下し、蓋体１０上に保温筒１１を介して保持されているボート１２がローディングエリアまで移動する。   When the heat treatment for the wafer W is completed in this manner, the lid body 10 is lowered by the elevating mechanism 13 and the boat 12 held on the lid body 10 via the heat retaining cylinder 11 moves to the loading area.

ところで、上述のように、半導体ウエハＷに対する熱処理工程中に、処理容器３内のガスが排気されて処理容器３内が真空状態となるまで減圧される。   Incidentally, as described above, during the heat treatment process for the semiconductor wafer W, the pressure in the processing container 3 is reduced until the gas in the processing container 3 is exhausted and the processing container 3 is in a vacuum state.

このような場合、蓋体１０に対して大きな負圧がかかることになる。本実施の形態によれば、蓋体１０が下方に向って突出する湾曲板からなるため、例えば半導体ウエハＷが４５０ｍｍの直径をもつ大型のウエハからなり、これに伴なって蓋体１０が５５０〜７５０ｍｍ前後の直径をもつようになったとしても、平板状の蓋体に比べて蓋体１０に加わる応力を小さく抑えることができる。このため蓋体１０を過度に厚肉とする必要はない。   In such a case, a large negative pressure is applied to the lid 10. According to the present embodiment, since the lid body 10 is composed of a curved plate protruding downward, for example, the semiconductor wafer W is composed of a large wafer having a diameter of 450 mm, and accordingly the lid body 10 is 550. Even if it comes to have a diameter of about 750 mm, the stress applied to the lid 10 can be kept small compared to the flat lid. For this reason, it is not necessary to make the cover body 10 excessively thick.

次に、蓋体１０の形状と、蓋体１０に加わるたわみ量との関係について、以下説明する。   Next, the relationship between the shape of the lid 10 and the amount of deflection applied to the lid 10 will be described below.

一例として、蓋体１０の形状を平板状のものから湾曲状のものまで種々変化させるとともに、湾曲状のものについては更に曲率半径Ｒが１２００ｍｍ、１３００ｍｍ、１５００ｍｍのものを準備した。次に蓋体１０の肉厚を５ｍｍ、１２ｍｍ、１５ｍｍの３段階で変化させた。   As an example, the shape of the lid 10 was variously changed from a flat shape to a curved shape, and the curved shape was further prepared with a curvature radius R of 1200 mm, 1300 mm, and 1500 mm. Next, the thickness of the lid 10 was changed in three stages of 5 mm, 12 mm, and 15 mm.

次にこのような構成からなる蓋体１０を用いて処理容器３の炉口３ａを閉塞した。次に処理容器３内を真空に維持し（約０Ｔｏｒｒ）、蓋体１０に対するたわみ量を求めた。   Next, the furnace port 3a of the processing container 3 was closed using the lid body 10 having such a configuration. Next, the inside of the processing container 3 was maintained in a vacuum (about 0 Torr), and the amount of deflection with respect to the lid 10 was determined.

蓋体１０の形状と、蓋体１０に加わるたわみ量との関係を図８に示す。   The relationship between the shape of the lid 10 and the amount of deflection applied to the lid 10 is shown in FIG.

図８に示すように、曲率半径Ｒが１３００ｍｍで厚みが５ｍｍの蓋体は、総高さが４４ｍｍとなる。また曲率半径Ｒが１３００ｍｍで厚みが５ｍｍの蓋体１０は、平板状で厚みが１２ｍｍの蓋体のひずみ量（０．４７ｍｍ）と略同一のひずみ量（０．４５ｍｍ）をもつことがわかった。   As shown in FIG. 8, the lid having a radius of curvature R of 1300 mm and a thickness of 5 mm has a total height of 44 mm. Further, it was found that the lid body 10 having a radius of curvature R of 1300 mm and a thickness of 5 mm has substantially the same strain amount (0.45 mm) as the strain amount (0.47 mm) of the flat plate-shaped lid body having a thickness of 12 mm. .

このため湾曲板からなり曲率半径Ｒが１３００ｍｍの蓋体１０は、同様のたわみ量を示す平板状の蓋体１０に比べて、蓋体１０の肉厚を小さく抑えることができる。   For this reason, the lid 10 made of a curved plate and having a radius of curvature R of 1300 mm can suppress the thickness of the lid 10 to be smaller than that of the flat lid 10 showing the same amount of deflection.

ここで曲率半径Ｒが１２００ｍｍで厚みが５ｍｍの蓋体１０については、さらに小さなたわみ量を示すが、曲率半径が小さすぎて、結局蓋体１０の総高さが大きくなり、熱処理炉２の全長も大きくなる。この場合、蓋体１０に安定した面積の平坦部１０ａを取ることはむずかしい。   Here, the lid 10 having a radius of curvature R of 1200 mm and a thickness of 5 mm shows a smaller amount of deflection. However, the radius of curvature is too small, and the total height of the lid 10 eventually becomes large. Also grows. In this case, it is difficult to take the flat portion 10a having a stable area on the lid body 10.

他方、曲率半径Ｒが１５００ｍｍで厚みが５ｍｍの蓋体１０は、曲率半径Ｒが１３００ｍｍで厚みが５ｍｍの蓋体１０に比べると、たわみ量が大きくなってしまう。   On the other hand, the lid 10 having a radius of curvature R of 1500 mm and a thickness of 5 mm has a larger amount of deflection than the lid 10 having a radius of curvature R of 1300 mm and a thickness of 5 mm.

このため蓋体１０の形状を上述のように５ｍｍ以上の厚みをもち、曲率半径Ｒが１３００ｍｍの湾曲板に設定した。   For this reason, the shape of the lid 10 was set to a curved plate having a thickness of 5 mm or more and a curvature radius R of 1300 mm as described above.

Ｗ 半導体ウエハ（被処理体）
１ 熱処理装置
２ 熱処理炉
３ 処理容器
３ａ 炉口
５ ヒータ
１０ 蓋体
１０ａ 平坦部
１１ 保温筒
１２ ボート
１３ 昇降機構
１６ 断熱材
１７ 棚部
１８ ヒータエレメント W Semiconductor wafer (object to be processed)
DESCRIPTION OF SYMBOLS 1 Heat processing apparatus 2 Heat processing furnace 3 Processing container 3a Furnace port 5 Heater 10 Lid 10a Flat part 11 Thermal insulation cylinder 12 Boat 13 Lifting mechanism 16 Heat insulating material 17 Shelf part 18 Heater element

Claims (3)

下部に炉口を有し被処理体を収容して熱処理するための縦型の円筒状処理容器と、処理容器の周囲を覆う断熱材と、断熱材の内周面に設けられたヒータとを有する熱処理炉と、
上記処理容器の炉口を閉塞する蓋体と、
該蓋体上に載置され被処理体を多段に保持する保持具と、
蓋体を昇降させて蓋体により炉口を開閉するとともに上記処理容器内へ保持具を搬入しかつ搬出する昇降機構と備え、上記蓋体は下方へ向って突出する湾曲板からなり、上記蓋体は、５５０〜７５０ｍｍの直径を有することを特徴とする熱処理装置。 A vertical cylindrical processing container having a furnace port at the bottom for accommodating the object to be heat-treated, a heat insulating material covering the periphery of the processing container, and a heater provided on the inner peripheral surface of the heat insulating material A heat treatment furnace having,
A lid for closing the furnace port of the processing vessel;
A holder placed on the lid for holding the object to be processed in multiple stages;
The lid includes a lifting mechanism that moves the lid up and down to open and close the furnace port and carries the holding tool into and out of the processing container. The lid comprises a curved plate protruding downward, and the lid The heat treatment apparatus characterized in that the body has a diameter of 550 to 750 mm . 上記蓋体は５ｍｍ以上の厚みを有することを特徴とする請求項１記載の熱処理装置。 The lid is heat treatment apparatus according to claim 1, characterized in that it has a thickness of at least 5 mm. 上記蓋体は曲率をもっていることを特徴とする請求項１または２記載の熱処理装置。 The heat treatment apparatus according to claim 1 or 2, wherein the lid body has a curvature.
JP2011166964A 2011-07-29 2011-07-29 Heat treatment equipment Expired - Fee Related JP5743788B2 (en)

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