JPH09283446A - Film forming device - Google Patents
Film forming deviceInfo
- Publication number
- JPH09283446A JPH09283446A JP12107596A JP12107596A JPH09283446A JP H09283446 A JPH09283446 A JP H09283446A JP 12107596 A JP12107596 A JP 12107596A JP 12107596 A JP12107596 A JP 12107596A JP H09283446 A JPH09283446 A JP H09283446A
- Authority
- JP
- Japan
- Prior art keywords
- outer tube
- film
- film forming
- forming apparatus
- tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【目次】以下の順序で本発明を説明する。 発明の属する技術分野 従来の技術（図７） 発明が解決しようとする課題 課題を解決するための手段 発明の実施の形態（図１〜図６） 発明の効果[Table of Contents] The present invention will be described in the following order. TECHNICAL FIELD OF THE INVENTION Conventional Technology (FIG. 7) Problem to be Solved by the Invention Means for Solving the Problems Embodiments of the Invention (FIGS. 1 to 6)
【０００２】[0002]
【発明の属する技術分野】本発明は成膜装置に関し、例
えばシリコンウエハの表面にポリシリコン膜等を成膜す
る成膜装置に適用して好適なものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a film forming apparatus, which is suitable for application to a film forming apparatus for forming a polysilicon film or the like on the surface of a silicon wafer.
【０００３】[0003]
【従来の技術】従来、半導体の製造過程においては、例
えばシリコンウエハ等の表面に所定気体の反応により生
成物を凝集付着させることによつてポリシリコン膜等を
成膜する成膜装置としてＣＶＤ(chemical vapor deposi
tion) 装置が用いられている。すなわち図７において１
は全体として縦型ＣＶＤ装置の成膜反応炉装置を示し、
基台２の上面側に石英で形成された円筒形状の内管３が
固定されている。2. Description of the Related Art Conventionally, in the manufacturing process of semiconductors, for example, as a film forming apparatus for forming a polysilicon film etc. by depositing a product by a reaction of a predetermined gas on the surface of a silicon wafer etc. chemical vapor deposi
device) is used. That is, 1 in FIG.
Indicates a film forming reaction furnace apparatus of a vertical CVD apparatus as a whole,
A cylindrical inner tube 3 made of quartz is fixed to the upper surface side of the base 2.
【０００４】また基台２の上面側には、石英で形成され
た外管４が内管３を覆うようにＯリング８を介して固定
されている。外管４は基台２に固定される下端側に開口
部を有するとともに上部側は所定の曲率を以て閉塞する
頭部４Ａを有する。内管３の内部には石英で形成された
ボート（支持部材）６によつて複数のシリコンウエハ７
が積層されている。An outer tube 4 made of quartz is fixed to the upper surface of the base 2 via an O-ring 8 so as to cover the inner tube 3. The outer tube 4 has an opening portion on the lower end side fixed to the base 2 and an upper portion has a head portion 4A that closes with a predetermined curvature. Inside the inner tube 3, a plurality of silicon wafers 7 are provided by a boat (support member) 6 made of quartz.
Are laminated.
【０００５】このように形成された成膜反応炉装置１に
対して、外管４の外側面４Ｂから加熱するとともに反応
炉内部を減圧し、この状態において内管３の内部にシラ
ン等の反応ガスを注入することによつてシリコンウエハ
７の表面にポリシリコン膜等を成膜する。内管３の内部
に注入された反応ガスは、当該内管内部から内管３と外
管４との間隙に（矢印ａで示す方向に）拡散し、外管４
と基台２との間に設けられた排出部から外部（真空ポン
プ側）に排出される。The film-forming reaction furnace apparatus 1 thus formed is heated from the outer surface 4B of the outer tube 4 and the inside of the reaction furnace is depressurized. In this state, reaction of silane or the like occurs inside the inner tube 3. By injecting a gas, a polysilicon film or the like is formed on the surface of the silicon wafer 7. The reaction gas injected into the inner tube 3 diffuses from the inside of the inner tube 3 into the gap between the inner tube 3 and the outer tube 4 (in the direction indicated by the arrow a), and the outer tube 4
It is discharged to the outside (on the side of the vacuum pump) from the discharge portion provided between the base 2 and the base 2.
【０００６】[0006]
【発明が解決しようとする課題】ところでかかる構成の
成膜反応炉装置１においては、反応ガスが外管４の内側
面４Ｄに直接接することにより、シリコンウエハ７に対
する成膜処理工程中に当該内側面４Ｄにも反応ガスによ
るポリシリコン膜等が生成される。By the way, in the film-forming reaction furnace apparatus 1 having such a configuration, the reaction gas is brought into direct contact with the inner surface 4D of the outer tube 4 so that the inner surface of the silicon wafer 7 can be processed during the film-forming process. A polysilicon film or the like is also generated by the reaction gas on the side surface 4D.
【０００７】ここでポリシリコンは外管４を形成する石
英と異なる熱膨張係数を有し、成膜処理工程中に外管４
を外部から 500°Ｃ程度に加熱すると当該ポリシリコン
が内側面４Ｄから剥がれ落ちる。特に外管頭部４Ａの内
側面４Ｄから剥がれ落ちたポリシリコンは塵となつて半
導体素子を形成しているシリコンウエハ７の表面に付着
し、この結果半導体素子の配線を切断する等の不良を発
生させる問題があつた。Here, polysilicon has a coefficient of thermal expansion different from that of quartz forming the outer tube 4, and the outer tube 4 is formed during the film forming process.
When polysilicon is heated to about 500 ° C. from outside, the polysilicon is peeled off from the inner surface 4D. In particular, the polysilicon peeled off from the inner side surface 4D of the outer tube head 4A adheres to the surface of the silicon wafer 7 forming a semiconductor element as dust, and as a result, a defect such as cutting the wiring of the semiconductor element may occur. There was a problem that caused it.
【０００８】この問題点を解決するための一つの方法と
して、ポリシリコンとほぼ同等の熱膨張係数を有する炭
化珪素(SiC) で外管４全体を形成する方法が考えられ
る。ところが外管４の下端部に形成されたフランジ部４
Ｃと基台２のフランジ部２Ａとはそれぞれ所定温度に冷
却されることによつてＯリング８の破損を回避するよう
になされており、このため外管４は頭部４Ａ側とフラン
ジ部４Ｃ側とで大きな温度差を生じ、この結果炭化珪素
(SiC) を用いると外管４が破損する問題があつた。As a method for solving this problem, a method of forming the entire outer tube 4 with silicon carbide (SiC) having a thermal expansion coefficient almost equal to that of polysilicon can be considered. However, the flange portion 4 formed at the lower end of the outer tube 4
The C and the flange portion 2A of the base 2 are each cooled to a predetermined temperature so as to avoid damage to the O-ring 8. Therefore, the outer pipe 4 has the head portion 4A side and the flange portion 4C. A large temperature difference occurs between the side and
When (SiC) was used, the outer tube 4 was damaged.
【０００９】本発明は以上の点を考慮してなされたもの
で、ポリシリコン等の成膜物からなる塵の発生を防止し
得る成膜装置を提案しようとするものである。The present invention has been made in view of the above points, and an object thereof is to propose a film forming apparatus capable of preventing the generation of dust composed of a film-formed product such as polysilicon.
【００１０】[0010]
【課題を解決するための手段】かかる課題を解決するた
め本発明においては、外管内部の天井部空間に反応ガス
によつて成膜される成膜物と熱膨張係数が近似する被覆
部材を備える。In order to solve such a problem, in the present invention, a coating member having a thermal expansion coefficient similar to that of a film formed by a reaction gas is provided in a ceiling space inside an outer tube. Prepare
【００１１】本発明によれば、被覆部材が膨張、収縮を
繰り返しても、この被覆部材に成膜された成膜物が被覆
部材と同様に膨張、収縮を繰り返すことにより、当該成
膜物が被覆部材から剥がれ落ちることが防止される。According to the present invention, even when the covering member repeatedly expands and contracts, the film-formed product formed on the covering member repeats expansion and contraction similarly to the covering member, so that the film-forming product is formed. It is prevented from peeling off from the covering member.
【００１２】[0012]
【発明の実施の形態】以下図面について、本発明の一実
施例を詳述する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below in detail with reference to the drawings.
【００１３】図７との対応部分に同一符号を付して示す
図１において２０は全体として成膜装置として用いられ
る縦型ＣＶＤ装置の成膜反応炉装置を示し、基台２の上
面側に炭化珪素(SiC) で形成された円筒形状の内管２３
が固定されている。In FIG. 1, in which parts corresponding to those in FIG. 7 are designated by the same reference numerals, numeral 20 indicates a film forming reaction furnace apparatus of a vertical CVD apparatus which is used as a film forming apparatus as a whole, on the upper surface side of the base 2. Cylindrical inner tube 23 made of silicon carbide (SiC)
Has been fixed.
【００１４】また基台２の上面側には、石英で形成され
た外管２４が内管２３を覆うようにＯリング８を介して
固定されている。外管２４は基台２に固定される下端側
に開口部を有するとともに上部側は所定の曲率を以て閉
塞する頭部２４Ａを有する。また外管２４の内側面２４
Ｄには内向きフランジ２４Ｅが形成されており、この内
向きフランジ２４Ｅ上に被覆部材として炭化珪素(SiC)
で形成されたキヤツプ２１が設けられている。An outer tube 24 made of quartz is fixed to the upper surface of the base 2 via an O-ring 8 so as to cover the inner tube 23. The outer tube 24 has an opening portion on the lower end side fixed to the base 2, and an upper portion has a head portion 24A that closes with a predetermined curvature. In addition, the inner surface 24 of the outer tube 24
An inward flange 24E is formed on D, and silicon carbide (SiC) is provided as a covering member on the inward flange 24E.
The cap 21 formed in 1. is provided.
【００１５】このキヤツプ２１は図２に示すように、ほ
ぼ半球形状のキヤツプ本体２１Ａと当該キヤツプ本体２
１Ａの裾から外向きに形成されたフランジ形状の着座部
２１Ｂとを有する。着座部２１Ｂには所定間隔でスリツ
ト２１Ｃが形成され、キヤツプ２１に外力を加えたとき
キヤツプ２１全体を撓ませることができる。従つて外管
頭部２４Ａの内部に対して内向きフランジ２４Ｅの内側
を通してキヤツプ２１を装着する際に、内向きフランジ
２４Ｅの内径よりも大きな外形を有する着座部２１Ｂを
内向きフランジ２４Ｅの内側に挿通させることができ
る。As shown in FIG. 2, the cap 21 has a substantially hemispherical cap main body 21A and the cap main body 2 concerned.
It has a flange-shaped seating portion 21B formed outward from the hem of 1A. The seats 21B are formed with slits 21C at predetermined intervals so that the cap 21 as a whole can be bent when an external force is applied to the cap 21. Therefore, when the cap 21 is attached to the inside of the outer tube head 24A through the inside of the inward flange 24E, the seating portion 21B having an outer shape larger than the inner diameter of the inward flange 24E is placed inside the inward flange 24E. Can be inserted.
【００１６】またキヤツプ本体２１Ａの曲率は外管頭部
２４Ａの曲率とほぼ等しく形成されおり、成膜反応炉内
部の反応ガスが矢印ａで示す方向に円滑に拡散し得るよ
うになされている。Further, the curvature of the cap body 21A is formed to be substantially equal to the curvature of the outer tube head 24A, so that the reaction gas inside the film forming reaction furnace can smoothly diffuse in the direction indicated by the arrow a.
【００１７】また図３に示すように、内管２３の内部に
は炭化珪素(SiC) で形成されたボート（支持部材）２６
によつて成膜生成部材としての複数のシリコンウエハ７
が積層される。すなわち図４は縦型ＣＶＤ装置３０を示
し、ヒータ３２の内部に成膜反応炉装置２０が設けられ
ている。この成膜反応炉装置２０の下部からボート２６
に保持された複数のシリコンウエハ７を挿入することに
より、成膜反応炉装置２０の内管２３（図３）内にシリ
コンウエハ７が収納される。Further, as shown in FIG. 3, a boat (support member) 26 made of silicon carbide (SiC) is provided inside the inner pipe 23.
Therefore, a plurality of silicon wafers 7 as film forming members
Are laminated. That is, FIG. 4 shows a vertical CVD apparatus 30 in which a film forming reaction furnace apparatus 20 is provided inside a heater 32. From the bottom of the film formation reaction furnace device 20, the boat 26
By inserting the plurality of silicon wafers 7 held by the silicon wafer 7 into the inner tube 23 (FIG. 3) of the film formation reaction furnace device 20, the silicon wafer 7 is housed.
【００１８】かくしてヒータ３２によつて外管２４を加
熱するとともに反応炉内部を減圧し、この状態において
内管２３の内部にシラン等の反応ガスを注入することに
よつてシリコンウエハ７の表面にポリシリコン膜等を成
膜する。外管２４の温度は、ヒータに設けられた熱電対
３３から得られる温度データに基づいて調整される。Thus, the outer tube 24 is heated by the heater 32 and the inside of the reaction furnace is decompressed, and in this state, a reaction gas such as silane is injected into the inner tube 23 so that the surface of the silicon wafer 7 is covered. A polysilicon film or the like is formed. The temperature of the outer tube 24 is adjusted based on the temperature data obtained from the thermocouple 33 provided in the heater.
【００１９】ここで内管２３の内部に注入された反応ガ
スは、当該内管内部から内管２３の上部開口２３Ａ（図
１）を介して内管２３と外管２４との間隙に矢印ａで示
す方向に拡散し、外管２４と基台２との間に設けられた
排出部（図示せず）から外部（真空ポンプ側）に排出さ
れる。Here, the reaction gas injected into the inner pipe 23 passes through the upper opening 23A (FIG. 1) of the inner pipe 23 into the gap between the inner pipe 23 and the outer pipe 24 from an arrow a. Is diffused in the direction indicated by and is discharged to the outside (vacuum pump side) from a discharge portion (not shown) provided between the outer tube 24 and the base 2.
【００２０】以上の構成において、内管２３の内部に注
入された反応ガスは内管２３の上部開口２３Ａからキヤ
ツプ２１の内側面２１Ｄに沿つて矢印ａ方向に拡散す
る。このとき内側面２１Ｄには反応ガスによる成膜物と
してポリシリコン等が成膜される。In the above structure, the reaction gas injected into the inner pipe 23 diffuses from the upper opening 23A of the inner pipe 23 along the inner side surface 21D of the cap 21 in the direction of arrow a. At this time, polysilicon or the like is formed as a film-formed product by the reaction gas on the inner surface 21D.
【００２１】また外管２４の内部全体は成膜処理の際に
ヒータ３２（図４）によつて外管２４の外部から加熱さ
れる。この結果成膜処理ごとにキヤツプ２１は熱膨張を
繰り返す。このキヤツプ２１を形成する炭化珪素(SiC）
材の熱膨張係数は当該キヤツプ２１の内側面２１Ｄに付
着（成膜）したポリシリコン等の成膜物の熱膨張係数と
ほぼ等しく、キヤツプ２１が膨張、収縮を繰り返して
も、これと同様に成膜物が膨張、収縮を繰り返すことに
より、当該成膜物がキヤツプ２１の内側面２１Ｄから剥
がれ落ちることが防止される。The entire inside of the outer tube 24 is heated from the outside of the outer tube 24 by the heater 32 (FIG. 4) during the film forming process. As a result, the cap 21 repeats thermal expansion for each film forming process. Silicon carbide (SiC) that forms this cap 21
The coefficient of thermal expansion of the material is almost equal to the coefficient of thermal expansion of a film formed of polysilicon or the like attached (formed) on the inner surface 21D of the cap 21, even if the cap 21 repeatedly expands and contracts, By repeatedly expanding and contracting the film-formed product, the film-formed product is prevented from peeling off from the inner surface 21D of the cap 21.
【００２２】またキヤツプ２１は外管頭部２４Ａの内部
に収納されており、外管２４の裾部に形成されたフラン
ジ部２４Ｃが冷却されても、フランジ部２４Ｃから外管
頭部２４Ａまでの距離が比較的大きいことにより、当該
外管頭部２４Ａ内に収納されたキヤツプ２１はヒータ加
熱による一様な温度分布となる。この結果キヤツプ２１
は全体として一様に熱膨張することにより、熱膨張率の
不均一による破損が回避される。Further, the cap 21 is housed inside the outer tube head 24A, and even if the flange portion 24C formed at the hem of the outer tube 24 is cooled, the flange portion 24C to the outer tube head 24A extends. Since the distance is relatively large, the cap 21 housed in the outer tube head 24A has a uniform temperature distribution due to heating by the heater. As a result, the cap 21
The uniform thermal expansion of the whole makes it possible to avoid damage due to uneven thermal expansion coefficient.
【００２３】以上の構成によれば、キヤツプ２１の内側
面２１Ｄに成膜されたポリシリコン等の成膜物はキヤツ
プ２１が膨張または収縮しても当該内側面２１Ｄから剥
がれ落ちることなく内側面２１Ｄに残り、この結果内管
２３内部における塵の発生を防止し得る。従つてシリコ
ンウエハに作りこまれている半導体素子の不良の発生を
防止することができる。According to the above construction, the film-formed material such as polysilicon formed on the inner side surface 21D of the cap 21 does not come off from the inner side surface 21D even if the cap 21 expands or contracts. As a result, it is possible to prevent the generation of dust inside the inner pipe 23. Therefore, it is possible to prevent the occurrence of defects in the semiconductor elements built in the silicon wafer.
【００２４】なお上述の実施例においては、外管頭部２
４Ａの内部に内向きフランジ２４Ｅを形成し、この内向
きフランジ２４Ｅにキヤツプ２１を載せるようにした場
合について述べたが、本発明はこれに限らず、例えば図
１との対応部分に同一符号を付して示す図５に示すよう
に、炭化珪素(SiC) で形成された円筒形状の内管４３の
上部を、外管頭部２４Ａの曲率と同様の曲率を以てほぼ
閉塞するように内管頭部４３Ａを形成し、当該内管頭部
４３Ａの一部に反応ガスの拡散路４３Ｂを形成しても良
い。In the above embodiment, the outer tube head 2
The case where the inward flange 24E is formed in the interior of 4A and the cap 21 is placed on the inward flange 24E has been described, but the present invention is not limited to this, and, for example, the same reference numerals are given to corresponding portions with FIG. As shown in FIG. 5 attached thereto, the inner pipe head is formed so that the upper portion of the cylindrical inner pipe 43 made of silicon carbide (SiC) is almost closed with a curvature similar to that of the outer pipe head 24A. The portion 43A may be formed and the reaction gas diffusion path 43B may be formed in a part of the inner tube head portion 43A.
【００２５】図５の成膜反応炉装置４０によれば、被覆
部材として内管４３に一体形成された内管頭部４３Ａの
内側面４３Ｃに反応ガスによるポリシリコン等の成膜物
が成膜されるが、図１について上述した場合と同様に当
該成膜物が内管４３と同様の熱膨張係数を有することか
ら、内側面４３Ｃから成膜物が剥がれ落ちることを有効
に回避し得る。因みに外管頭部４の内側面４Ｄにも成膜
物が生成されるが、この内側面４Ｄから剥がれ落ちた成
膜物は内管頭部４３Ａによつて内管４３の内部へ侵入し
ないようになされている。According to the film-forming reaction furnace apparatus 40 of FIG. 5, a film-formed product such as polysilicon is formed by the reaction gas on the inner side surface 43C of the inner tube head 43A integrally formed with the inner tube 43 as a covering member. However, as in the case described above with reference to FIG. 1, since the film-formed product has the same coefficient of thermal expansion as the inner tube 43, it is possible to effectively prevent the film-formed product from peeling off from the inner surface 43C. By the way, a film is formed on the inner surface 4D of the outer pipe head 4, but the film peeled off from the inner surface 4D is prevented from entering the inside of the inner pipe 43 by the inner pipe head 43A. Has been done.
【００２６】このように図５に示す実施例の場合、外管
内部に内向きフランジ２４Ｅ（図１）を形成する必要が
なく、従来用いられている外管４をそのまま使用するこ
とができ、この分簡単な構成で成膜物による塵の発生を
防止できる。As described above, in the case of the embodiment shown in FIG. 5, it is not necessary to form the inward flange 24E (FIG. 1) inside the outer tube, and the conventionally used outer tube 4 can be used as it is. Therefore, dust can be prevented from being generated by the film-forming material with a simple structure.
【００２７】また上述の実施例においては、外管頭部２
４Ａの内部に内向きフランジ２４Ｅを形成し、この内向
きフランジ２４Ｅにキヤツプ２１を載せるようにした場
合について述べたが、本発明はこれに限らず、例えば図
１との対応部分に同一符号を付して示す図６に示すよう
に炭化珪素(SiC) で形成された円筒形状の内管２３の上
部開口に被覆部材として炭化珪素(SiC) で形成された内
管キヤツプ５３を被せるようにしても良い。Further, in the above embodiment, the outer tube head 2
The case where the inward flange 24E is formed in the interior of 4A and the cap 21 is placed on the inward flange 24E has been described, but the present invention is not limited to this, and, for example, the same reference numerals are given to corresponding portions with FIG. As shown in FIG. 6, the inner pipe cap 53 made of silicon carbide (SiC) is covered as a covering member on the upper opening of the cylindrical inner pipe 23 made of silicon carbide (SiC). Is also good.
【００２８】すなわち図６において内管キヤツプ５３は
外管頭部２４Ａとほぼ同様の曲率を有する半球形状でな
り、その一部に反応ガスの拡散路５３Ａを形成し、裾部
５３Ｂを内管２３に嵌合するようになされている。従つ
て図６の成膜反応炉装置５０によれば、内管キヤツプ５
３の内側面５３Ｃに反応ガスによるポリシリコン等の成
膜物が成膜されるが、図１について上述した場合と同様
に当該成膜物が内管キヤツプ５３と同様の熱膨張係数を
有することから、内側面５３Ｃから成膜物が剥がれ落ち
ることを有効に回避し得る。因みに外管頭部４Ａの内側
面４Ｄにも成膜物が生成されるが、この内側面４Ｄから
剥がれ落ちた成膜物は内管キヤツプ５３によつて内管２
３の内部へ侵入しないようになされている。That is, in FIG. 6, the inner pipe cap 53 has a hemispherical shape having substantially the same curvature as the outer pipe head 24A, and a reaction gas diffusion passage 53A is formed in a part of the inner pipe cap 53, and a skirt portion 53B is formed in the inner pipe 23. It is designed to fit in. Therefore, according to the film forming reactor apparatus 50 of FIG. 6, the inner pipe cap 5
A film formed of polysilicon or the like is formed on the inner surface 53C of No. 3 by the reaction gas, and the film has a thermal expansion coefficient similar to that of the inner pipe cap 53 as in the case described above with reference to FIG. Therefore, it is possible to effectively prevent the film-forming material from peeling off from the inner surface 53C. By the way, a film is also formed on the inner surface 4D of the outer tube head 4A, but the film peeled off from this inner surface 4D is removed by the inner tube cap 53.
It is designed so that it does not invade the inside of 3.
【００２９】このように図６に示す実施例の場合、外管
内部に内向きフランジ２４Ｅ（図１）を形成する必要が
なく、従来用いられている外管４をそのまま使用するこ
とができ、この分簡単な構成で成膜物による塵の発生を
防止できる。As described above, in the case of the embodiment shown in FIG. 6, it is not necessary to form the inward flange 24E (FIG. 1) inside the outer tube, and the conventionally used outer tube 4 can be used as it is. Therefore, dust can be prevented from being generated by the film-forming material with a simple structure.
【００３０】また上述の実施例においては、内管２３と
して炭化珪素(SiC) 材を用いた場合について述べたが、
本発明はこれに限らず、石英で形成された内管を用いて
も良い。In the above embodiment, the case where silicon carbide (SiC) material is used as the inner tube 23 has been described.
The present invention is not limited to this, and an inner tube made of quartz may be used.
【００３１】また上述の実施例においては、キヤツプ２
１、内管頭部４３Ａ及び内管キヤツプ５３の曲率を外管
頭部２４Ａ、４Ａの曲率とほぼ同様とした場合について
述べたが、本発明はこれに限らず、種々の曲率のものを
適用し得る。In the above embodiment, the cap 2
The case where the curvatures of the inner tube head 43A and the inner tube cap 53 are set to be substantially the same as the curvatures of the outer tube heads 24A and 4A has been described, but the present invention is not limited to this and various curvatures are applied. You can
【００３２】また上述の実施例においては、キヤツプ２
１、内管頭部４３Ａ及び内管キヤツプ５３の形状を半球
形状とした場合について述べたが、本発明はこれに限ら
ず、平面形状等、種々の形状のものを用いても良い。In the above embodiment, the cap 2
1, the case where the inner tube head 43A and the inner tube cap 53 have a hemispherical shape has been described, but the present invention is not limited to this, and various shapes such as a planar shape may be used.
【００３３】また上述の実施例においては、反応ガスと
してシランを注入する場合について述べたが、本発明は
これに限らず、他の反応ガスを用いる成膜反応炉装置に
広く適用することができる。Further, in the above-mentioned embodiments, the case where silane is injected as a reaction gas has been described, but the present invention is not limited to this, and can be widely applied to a film forming reactor apparatus using another reaction gas. .
【００３４】また上述の実施例においては、炭化珪素(S
iC) 材でなるキヤツプ２１、内管頭部４３Ａ及び内管キ
ヤツプ５３を用いた場合について述べたが、本発明はこ
れに限らず、要はポリシリコン等の成膜物と熱膨張係数
が近似又はほぼ同一の材料であれば他の材料を用いるこ
とができる。In the above embodiment, silicon carbide (S
Although the cap 21 made of iC) material, the inner pipe head 43A and the inner pipe cap 53 are used, the present invention is not limited to this, and the point is that the thermal expansion coefficient is similar to that of a film formed of polysilicon or the like. Alternatively, other materials can be used as long as they are substantially the same material.
【００３５】さらに上述の実施例においては、シリコン
ウエハ７の表面に成膜層を生成する成膜反応炉装置２
０、４０及び５０に本発明を適用した場合について述べ
たが、本発明はこれに限らず、他の種々の材料に成膜層
を生成する成膜反応炉装置に広く適用することができ
る。Further, in the above-mentioned embodiment, the film forming reactor apparatus 2 for forming a film forming layer on the surface of the silicon wafer 7.
Although the case where the present invention is applied to 0, 40, and 50 has been described, the present invention is not limited to this and can be widely applied to a film forming reactor apparatus that forms a film forming layer on various other materials.
【００３６】[0036]
【発明の効果】上述のように本発明によれば、成膜物と
熱膨張係数が近似する被覆部材を設けることにより、成
膜装置内部において当該成膜装置の外管内部からの成膜
物の落下による塵の発生を防止することができる。かく
して内部に配置された成膜生成部材に対して塵の付着を
防止し得る。As described above, according to the present invention, by providing the coating member having a thermal expansion coefficient similar to that of the film-formed product, the film-formed product from the inside of the outer tube of the film-forming device is provided inside the film-forming device. It is possible to prevent the generation of dust due to the falling of. Thus, it is possible to prevent dust from adhering to the film formation member arranged inside.
【図１】本発明による成膜装置の一実施例を示す断面図
である。FIG. 1 is a sectional view showing an embodiment of a film forming apparatus according to the present invention.
【図２】本発明による被覆部材の一実施例を示す斜視図
である。FIG. 2 is a perspective view showing an embodiment of a covering member according to the present invention.
【図３】成膜反応炉装置の全体構成を示す部分的断面図
である。FIG. 3 is a partial cross-sectional view showing the overall structure of a film forming reactor apparatus.
【図４】縦型ＣＶＤ装置の全体構成を示す側面図であ
る。FIG. 4 is a side view showing the overall configuration of a vertical CVD apparatus.
【図５】他の実施例を示す断面図である。FIG. 5 is a sectional view showing another embodiment.
【図６】他の実施例を示す断面図である。FIG. 6 is a sectional view showing another embodiment.
【図７】従来例を示す断面図である。FIG. 7 is a sectional view showing a conventional example.
１、２０、４０、５０……成膜反応炉装置、３、２３、
４３……内管、４、２４……外管、４Ａ、２４Ａ……外
管頭部、７……シリコンウエハ、８……Ｏリング、２１
……キヤツプ、４３Ａ……内管頭部、４３Ｂ、５３Ａ…
…拡散路、５３……内管キヤツプ1, 20, 40, 50 ... Film forming reactor apparatus, 3, 23,
43 ... inner tube, 4, 24 ... outer tube, 4A, 24A ... outer tube head, 7 ... silicon wafer, 8 ... O-ring, 21
...... Cap, 43A ...... Inner tube head, 43B, 53A ...
… Diffusion path, 53 …… Inner tube cap
Claims (6)
管内部に所定の反応ガスを注入することにより上記成膜
生成部材に所定の膜を生成する成膜装置において、 上記外管内部の天井部空間に上記反応ガスによつて成膜
される成膜物と熱膨張係数が近似する被覆部材を具える
ことを特徴とする成膜装置。1. A film forming apparatus for arranging a film forming member inside an outer tube and injecting a predetermined reaction gas into the inside of the outer tube to form a predetermined film on the film forming member. A film forming apparatus, comprising a coating member having a thermal expansion coefficient similar to that of a film formed by the reaction gas in a ceiling space inside the tube.
１に記載の成膜装置。2. The film forming apparatus according to claim 1, wherein the covering member is formed of a silicon carbide (SiC) material.
成部材を収納するとともに上記被覆部材と同一材料で形
成された筒状の内管と、 ほぼ鉛直方向に筒体を向けた上記内管と一体に形成され
当該内管の上部開口をほぼ閉塞する上記被覆部材と、 上記被覆部材の一部に形成された上記反応ガスの拡散路
とを具えることを特徴とする請求項１に記載の成膜装
置。3. A tubular inner tube, which is disposed inside the outer tube, accommodates the film formation member therein, and is made of the same material as the covering member, and has a tubular body oriented substantially vertically. The coating member is integrally formed with the inner pipe and substantially closes an upper opening of the inner pipe, and the reaction gas diffusion passage formed in a part of the coating member. The film forming apparatus according to.
成部材を収納する筒状の内管と、 ほぼ鉛直方向に筒体を向けた上記内管の上部開口に被設
される上記被覆部材とを具えることを特徴とする請求項
１に記載の成膜装置。4. A cylindrical inner tube disposed inside the outer tube and accommodating the film formation member therein, and an inner tube having a cylindrical body oriented substantially vertically and provided in an upper opening of the inner tube. The film forming apparatus according to claim 1, further comprising a coating member.
外方向にフランジ状に形成された着座部を有する上記被
覆部材と、 上記外管内部に形成された内向きフランジとを具え、上
記内向きフランジに上記被覆部材の上記着座部を着座さ
せることにより上記外管内部に上記被覆部材を配置する
ことを特徴とする請求項１に記載の成膜装置。5. A covering member having a substantially hemispherical main body and a seating portion formed in a flange shape outward from a hem of the main body, and an inward flange formed inside the outer tube, The film forming apparatus according to claim 1, wherein the seating portion of the covering member is seated on an inward flange to dispose the covering member inside the outer tube.
項５に記載の成膜装置。6. The film forming apparatus according to claim 5, wherein the covering member has a slit formed in the seat portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12107596A JPH09283446A (en) | 1996-04-18 | 1996-04-18 | Film forming device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12107596A JPH09283446A (en) | 1996-04-18 | 1996-04-18 | Film forming device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09283446A true JPH09283446A (en) | 1997-10-31 |
Family
ID=14802237
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12107596A Pending JPH09283446A (en) | 1996-04-18 | 1996-04-18 | Film forming device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH09283446A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013030676A (en) * | 2011-07-29 | 2013-02-07 | Tokyo Electron Ltd | Thermal treatment apparatus |
| JP2014053550A (en) * | 2012-09-10 | 2014-03-20 | Koyo Thermo System Kk | Thermal treatment apparatus |
| CN106553300A (en) * | 2016-11-18 | 2017-04-05 | 张航 | A kind of method that reaction injection rotational forming prepares pipeline, pipe mould and pipeline former |
-
1996
- 1996-04-18 JP JP12107596A patent/JPH09283446A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013030676A (en) * | 2011-07-29 | 2013-02-07 | Tokyo Electron Ltd | Thermal treatment apparatus |
| JP2014053550A (en) * | 2012-09-10 | 2014-03-20 | Koyo Thermo System Kk | Thermal treatment apparatus |
| CN106553300A (en) * | 2016-11-18 | 2017-04-05 | 张航 | A kind of method that reaction injection rotational forming prepares pipeline, pipe mould and pipeline former |
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