JP5727448B2 - 流動化した有機材料の気化 - Google Patents
流動化した有機材料の気化 Download PDFInfo
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- JP5727448B2 JP5727448B2 JP2012247297A JP2012247297A JP5727448B2 JP 5727448 B2 JP5727448 B2 JP 5727448B2 JP 2012247297 A JP2012247297 A JP 2012247297A JP 2012247297 A JP2012247297 A JP 2012247297A JP 5727448 B2 JP5727448 B2 JP 5727448B2
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Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/228—Gas flow assisted PVD deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/246—Replenishment of source material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S427/00—Coating processes
- Y10S427/101—Liquid Source Chemical Depostion, i.e. LSCVD or Aerosol Chemical Vapor Deposition, i.e. ACVD
Description
(a)所定量の流動化した粉末形態の有機材料を供給し;
(b)その粉末化した有機材料を計量し、流動化した粉末流として第1の部材の上に誘導し;
(c)その第1の部材を加熱して流動化した上記粉末流を気化させ;
(d)気化した有機材料をマニホールド内に回収し;
(e)そのマニホールドに通じている少なくとも1つの開口部が形成された第2の部材を用意し、気化した有機材料をその第2の部材によって上記表面に誘導して膜を形成する操作を含む方法によって達成される。
透過可能な第1の部材40の加熱手段は、誘導カップリングまたはRFカップリング、近接した位置にある放射式加熱素子、抵抗式加熱手段のいずれかを備えている。透過可能な第1の部材40は、望む速度で有機材料を気化させるのに十分な一定の温度に加熱することができる。この温度は、有機材料またはその各有機成分の気化温度よりも高温である。ある1つの有機成分は連続した温度範囲にわたって異なる速度で気化するため、気化速度の温度依存性は対数になる。望む堆積速度を選択する際には、有機材料を気化させるのに必要な温度も決定する。その温度を、速度に依存した望む気化温度と呼ぶことにする。有機材料が2種類以上の有機成分を含んでいる場合には、透過可能な第1の部材40の温度は、有機材料の各成分が同時に気化するよう、各成分の気化温度よりも高温にする。気化した有機材料の蒸気は素早く透過可能な第1の部材40を通過し、加熱されたガス用マニホールド60の中に入るか、標的とする基板へと直接到達することができる。蒸気が望む気化温度になっている時間は短いため、熱分解は非常に少ないか、まったくない。有機材料が高温(すなわち速度に依存した気化温度)になっている時間は、従来の装置と方法よりも数桁短い(従来技術での数時間〜数日に対して数秒)。そのため有機材料を従来よりも高い温度に加熱できる。したがって本発明の装置と方法では、有機材料の顕著な分解を引き起こすことなく、実質的により大きな気化速度を実現できる。気化速度が一定だと、気柱の形状が一定になってその形が維持される。この明細書では、気柱は、気化装置5から出てくる蒸気雲として定義される。有機材料のエーロゾルは、透過可能な第1の部材40の下面に衝突して気化し、蒸気が透過可能な第1の部材40を通って加熱されたガス用マニホールド60の中に入ることがわかる。本発明は、エーロゾルが透過可能な第1の部材40のマニホールド側に衝突する場合にも実施できる。この場合には、蒸気が加熱されたガス用マニホールドの中で直接生成され、透過可能な第1の部材40を通過することはない。そのような場合、透過可能な第1の部材40は、厚さ全体にわたって多孔性ではないことが好ましく、多孔性媒体の大きな比表面積特性を少なくともエーロゾルが衝突する面で保持している。
Q1とQ2は、独立に、芳香族第三級アミン部分の中から選択され;
Gは、結合基(例えば、炭素-炭素結合のアリーレン基、シクロアルキレン基、アルキレン基など)である。
R1とR2は、それぞれ独立に、水素原子、アリール基、アルキル基のいずれかを表わすか、R1とR2は、合わさって、シクロアルキル基を完成させる原子を表わし;
R3とR4は、それぞれ独立にアリール基を表わし、そのアリール基は、構造式C:
R5とR6は、独立に、アリール基の中から選択される。一実施態様では、R5とR6のうちの少なくとも一方は、多環縮合環構造(例えばナフタレン)を含んでいる。
それぞれのAreは、独立に、アリーレン基(例えばフェニレン部分またはアントラセン部分)の中から選択され;
nは1〜4の整数であり;
Ar、R7、R8、R9は、独立に、アリール基の中から選択される。
この明細書に記載した装置と方法を利用すると、複数の蒸発源を必要とせずに多成分ゲスト/ホスト層をコーティングすることができる。
金属としては、例えばアルカリ金属(リチウム、ナトリウム、カリウムなど)、アルカリ土類金属(マグネシウム、カルシウムなど)、土類金属(ホウ素、アルミニウムなど)が可能である。一般に、キレート化金属として有用であることが知られている任意の一価、二価、三価の金属を使用することができる。
10 有機材料導入口
15 ノズル
20 基部ブロック
30 制御通路
40 透過可能な第1の部材
45 容器
50 第2の部材
55 計量バルブ
60 マニホールド
70 シールド
75 装着用ロック装置
80 蒸着チェンバー
85 OLED基板
90 開口部
95 並進移動装置
100 真空源
110 OLEDデバイス
120 基板
130 アノード
135 正孔注入層
140 正孔輸送層
150 発光層
155 電子輸送層
160 電子注入層
170 有機層
190 カソード
Claims (2)
- 有機材料を気化させて基板の表面に薄膜を形成する方法であって、
(a)所定量の流動化した粉末形態の有機材料を供給し;
(b)その粉末化した有機材料を計量し、流動化した粉末流として加熱されたノズルを通して第1の部材の上に誘導し;
(c)その第1の部材を直接加熱して流動化した上記粉末流を気化させ;
(d)気化した有機材料をマニホールド内に回収し;
(e)そのマニホールドと一体化された又はそのマニホールドに取り付けられた第2の部材に複数の開口部を用意し、気化した有機材料を該マニホールドから該複数の開口部を通して上記基板の表面に誘導して薄膜を形成する操作を含む方法。 - 有機材料を気化させて基板の表面に薄膜を形成する方法であって、
(a)所定量の粉末形態の有機材料を容器に供給し;
(b)その粉末形態の有機材料を流動化し、計量し、流動化した粉末流として透過可能な第1の部材の上に誘導し;
(c)その透過可能な第1の部材を直接加熱し、流動化した上記粉末流を、その透過可能な上記第1の部材の中を通過するときに気化させ;
(d)気化した有機材料をマニホールド内に回収し;
(e)そのマニホールドと一体化された又はそのマニホールドに取り付けられた第2の部材に複数の開口部を用意し、気化した有機材料を該マニホールドから該複数の開口部を通して上記基板の表面に誘導して薄膜を形成する操作を含む方法。
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US10/805,980 | 2004-03-22 | ||
US10/805,980 US7238389B2 (en) | 2004-03-22 | 2004-03-22 | Vaporizing fluidized organic materials |
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US (1) | US7238389B2 (ja) |
EP (1) | EP1733066B1 (ja) |
JP (2) | JP2007531819A (ja) |
KR (1) | KR101146267B1 (ja) |
CN (1) | CN1934284B (ja) |
TW (1) | TWI360581B (ja) |
WO (1) | WO2005093117A2 (ja) |
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WO2005093117A2 (en) | 2005-10-06 |
KR20070004754A (ko) | 2007-01-09 |
JP2007531819A (ja) | 2007-11-08 |
EP1733066B1 (en) | 2016-12-07 |
CN1934284B (zh) | 2010-06-23 |
EP1733066A2 (en) | 2006-12-20 |
KR101146267B1 (ko) | 2012-05-15 |
JP2013057129A (ja) | 2013-03-28 |
TW200604358A (en) | 2006-02-01 |
TWI360581B (en) | 2012-03-21 |
US7238389B2 (en) | 2007-07-03 |
CN1934284A (zh) | 2007-03-21 |
US20050208220A1 (en) | 2005-09-22 |
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