JP5726126B2 - 高い強度をもつパワーigbt - Google Patents
高い強度をもつパワーigbt Download PDFInfo
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- JP5726126B2 JP5726126B2 JP2012097022A JP2012097022A JP5726126B2 JP 5726126 B2 JP5726126 B2 JP 5726126B2 JP 2012097022 A JP2012097022 A JP 2012097022A JP 2012097022 A JP2012097022 A JP 2012097022A JP 5726126 B2 JP5726126 B2 JP 5726126B2
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- 239000004065 semiconductor Substances 0.000 claims description 39
- 239000000758 substrate Substances 0.000 claims description 23
- 230000007704 transition Effects 0.000 claims description 16
- 210000000746 body region Anatomy 0.000 claims description 15
- 239000002800 charge carrier Substances 0.000 description 30
- 238000000034 method Methods 0.000 description 29
- 239000002019 doping agent Substances 0.000 description 10
- 230000007547 defect Effects 0.000 description 9
- 239000013078 crystal Substances 0.000 description 7
- 230000003071 parasitic effect Effects 0.000 description 7
- 239000002245 particle Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- 238000004904 shortening Methods 0.000 description 4
- 230000000295 complement effect Effects 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical group [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000002123 temporal effect Effects 0.000 description 2
- 241001354791 Baliga Species 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
- H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
Description
本発明は、パワーIGBTに関する。
パワーIGBTは、例えば、Stengl, Tihanyi: "Leistungs-MOS-FET-Praxis" (Power MOS-FET practice), Pflaum出版社, Munich, 1992, pages 101-104、あるいはBaliga: "Power Semiconductor Devices," PWS Publishing, 1995, pages 428-431に記載されている。
12 ドリフト区域
13 トランジスタセル
14 ボディ区域
15 ソース区域
16 ゲート電極
17 ゲート絶縁層
18 端子電極、ソース電極
19、20 絶縁層
22 ゲートリード
23 絶縁層
24 ゲートパッド
25 フィールドストップ区域
100 半導体基板
111、112 エミッタ部分
121、122 ドリフト区域部分
131〜133 改変トランジスタセル
141〜143 第1の伝導型の半導体区域
151 ソース区域
161 ゲート電極の凹み
162 ゲート電極の部分
181 端子電極の接点部分
231 凹み
251、252 フィールドストップ区域部分
Claims (2)
- 半導体基板(100)と、セルアレイとを備えるパワーIGBTであって、
上記半導体基板(100)は、第1の伝導型のエミッタ区域(11)と、該エミッタ区域(11)に隣接する第2の伝導型のドリフト区域(12)と、を有し、
上記セルアレイは、多数のトランジスタセル(13)を備え、
上記多数のトランジスタセル(13)は、それぞれ、ソース区域(15)と、該ソース区域(15)と上記ドリフト区域との間に配置されるボディ区域(14)と、上記ソース区域(15)および上記ボディ区域(14)から絶縁されるように配置されるゲート電極(16)と、を有し、
上記ソース区域(15)と上記ボディ区域(14)とは、端子電極(18)により短絡されており、
上記セルアレイは、第1のセル密度を有する第1のセルアレイ部分(101)と、該第1のセル密度より低い第2のセル密度を有する第2のセルアレイ部分(102)と、を有し、
上記第1のセルアレイ部分(101)と上記第2のセルアレイ部分(102)との間の遷移領域内に、少なくとも1つのトランジスタセル(133)が、上記第2のセルアレイ部分(102)から上記第1のセルアレイ部分(101)への方向に向かって、備えられ、
上記少なくとも1つのトランジスタセル(133)において、上記ボディ区域(14)のうち、上記ソース区域(15)に隣接する部分(141)は、上記ボディ区域(14)の別の部分と比較してドーピング濃度が高く、
上記ソース区域(15)の横方向において、上記部分(141)は、上記ソース区域(15)の寸法の全体に沿って延びつつ、上記ドリフト区域(12)に向かっており、かつ、上記ボディ区域(14)と上記端子電極(18)との境界の全体に延びていないことを特徴とするパワーIGBT。 - 上記第1のセルアレイ部分(101)と上記第2のセルアレイ部分(102)との間の遷移領域内に、ソース区域を持たない、少なくとも1つの改変トランジスタセル(131)が、上記第2のセルアレイ部分(102)から上記第1のセルアレイ部分(101)への方向に向かって、備えられる、請求項1に記載のパワーIGBT。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102005053487.2 | 2005-11-09 | ||
DE102005053487A DE102005053487B4 (de) | 2005-11-09 | 2005-11-09 | Leistungs-IGBT mit erhöhter Robustheit |
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JP2006302653A Division JP2007134714A (ja) | 2005-11-09 | 2006-11-08 | 高い強度をもつパワーigbt |
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JP2012178583A JP2012178583A (ja) | 2012-09-13 |
JP5726126B2 true JP5726126B2 (ja) | 2015-05-27 |
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JP2006302653A Pending JP2007134714A (ja) | 2005-11-09 | 2006-11-08 | 高い強度をもつパワーigbt |
JP2012097022A Active JP5726126B2 (ja) | 2005-11-09 | 2012-04-20 | 高い強度をもつパワーigbt |
JP2012097021A Pending JP2012182470A (ja) | 2005-11-09 | 2012-04-20 | 高い強度をもつパワーigbt |
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US (1) | US7470952B2 (ja) |
JP (3) | JP2007134714A (ja) |
DE (1) | DE102005053487B4 (ja) |
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JP2009194330A (ja) * | 2008-02-18 | 2009-08-27 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP5324157B2 (ja) * | 2008-08-04 | 2013-10-23 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
US8159022B2 (en) | 2008-09-30 | 2012-04-17 | Infineon Technologies Austria Ag | Robust semiconductor device with an emitter zone and a field stop zone |
JP5844956B2 (ja) * | 2009-03-05 | 2016-01-20 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP2011049393A (ja) * | 2009-08-27 | 2011-03-10 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
JP5149922B2 (ja) * | 2010-02-23 | 2013-02-20 | 富士電機株式会社 | 半導体素子 |
JP5925991B2 (ja) | 2010-05-26 | 2016-05-25 | 三菱電機株式会社 | 半導体装置 |
JP5361808B2 (ja) * | 2010-06-23 | 2013-12-04 | 三菱電機株式会社 | 電力用半導体装置 |
DE102010039258B4 (de) * | 2010-08-12 | 2018-03-15 | Infineon Technologies Austria Ag | Transistorbauelement mit reduziertem Kurzschlussstrom |
WO2012036247A1 (ja) * | 2010-09-17 | 2012-03-22 | 富士電機株式会社 | 半導体装置 |
JP2012256628A (ja) * | 2011-06-07 | 2012-12-27 | Renesas Electronics Corp | Igbtおよびダイオード |
US9184255B2 (en) * | 2011-09-30 | 2015-11-10 | Infineon Technologies Austria Ag | Diode with controllable breakdown voltage |
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US9147727B2 (en) | 2013-09-30 | 2015-09-29 | Infineon Technologies Ag | Semiconductor device and method for forming a semiconductor device |
CN105531825B (zh) | 2013-12-16 | 2019-01-01 | 富士电机株式会社 | 半导体装置及半导体装置的制造方法 |
US9159819B2 (en) * | 2014-02-20 | 2015-10-13 | Infineon Technologies Ag | Semiconductor device and RC-IGBT with zones directly adjoining a rear side electrode |
JP2016066701A (ja) * | 2014-09-25 | 2016-04-28 | 株式会社日立製作所 | 半導体装置およびそれを用いた電力変換装置 |
US10438947B2 (en) | 2015-01-13 | 2019-10-08 | Mitsubishi Electric Corporation | Semiconductor device, manufacturing method therefor and semiconductor module |
JP6179538B2 (ja) * | 2015-03-04 | 2017-08-16 | トヨタ自動車株式会社 | 半導体装置 |
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JP2007134714A (ja) | 2007-05-31 |
DE102005053487B4 (de) | 2011-06-09 |
JP2012178583A (ja) | 2012-09-13 |
DE102005053487A1 (de) | 2007-05-31 |
JP2012182470A (ja) | 2012-09-20 |
US20070120181A1 (en) | 2007-05-31 |
US7470952B2 (en) | 2008-12-30 |
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