JP5719494B2 - 電子ビームを用いた表面下の画像化 - Google Patents
電子ビームを用いた表面下の画像化 Download PDFInfo
- Publication number
- JP5719494B2 JP5719494B2 JP2006102293A JP2006102293A JP5719494B2 JP 5719494 B2 JP5719494 B2 JP 5719494B2 JP 2006102293 A JP2006102293 A JP 2006102293A JP 2006102293 A JP2006102293 A JP 2006102293A JP 5719494 B2 JP5719494 B2 JP 5719494B2
- Authority
- JP
- Japan
- Prior art keywords
- metal layer
- milling
- image
- subsurface
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000010894 electron beam technology Methods 0.000 title claims description 33
- 238000003384 imaging method Methods 0.000 title claims description 10
- 238000000034 method Methods 0.000 claims description 34
- 238000003801 milling Methods 0.000 claims description 30
- 239000002184 metal Substances 0.000 claims description 28
- 238000010884 ion-beam technique Methods 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 12
- 238000010586 diagram Methods 0.000 claims description 7
- 238000000992 sputter etching Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 description 20
- 239000000758 substrate Substances 0.000 description 12
- 239000002245 particle Substances 0.000 description 8
- 238000011960 computer-aided design Methods 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000001133 acceleration Effects 0.000 description 4
- 238000013459 approach Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000009977 dual effect Effects 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000000879 optical micrograph Methods 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 238000000027 scanning ion microscopy Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- YLJREFDVOIBQDA-UHFFFAOYSA-N tacrine Chemical compound C1=CC=C2C(N)=C(CCCC3)C3=NC2=C1 YLJREFDVOIBQDA-UHFFFAOYSA-N 0.000 description 1
- 229960001685 tacrine Drugs 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
- G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/245—Detection characterised by the variable being measured
- H01J2237/24592—Inspection and quality control of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2813—Scanning microscopes characterised by the application
- H01J2237/2817—Pattern inspection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/31—Processing objects on a macro-scale
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
102 電子ビームコラム
104 イオンビームコラム
106 照射スポット
108 基板
112 検出器
500 素子
502 金属層
504 素子の裏側
506 穴(200 mm × 200 mm)
508 部位
512 穴(1 mm × 1 mm)
700 ウエハ
702 素子又は回路
704 基準マーク
Claims (3)
- イオンビームミリング及び電子ビーム画像化を用いた半導体素子を処理する方法であって:
埋め込まれた金属層に接近するための穴を開けるために集束イオンビームを半導体素子に向かって方向付ける段階;
表面下の像を取得するのに、前記穴の底部に向かって十分なエネルギーを有する電子を有する電子ビームを方向付け、少なくとも1μmのSiを通って前記金属層の前記表面下の像を観察するため、前記穴から放出された電子を収集する段階;
前記イオンビームミリングを周期的に中断して前記埋め込まれた金属層の表面下の像が視認可能であるのか否かを検討する段階;
前記埋め込まれた金属層の表面下の像が視認可能でない場合にミリングを継続する段階;
前記電子ビーム中の電子のエネルギーに基づいて、前記金属層の表面下の像が明確になるときに前記表面から前記埋め込まれた金属層までの深さを決定する段階;及び、
前記の決定された前記表面から前記埋め込まれた金属層までの深さに基づいて、前記金属層を露出するために、前記イオンミリングがどの程度行われるのかを決定する段階;
を有する方法。 - 前記半導体素子の方向の整合又は前記集束イオンビームによる前記半導体素子のミリングのため、表面下の部位の特定を目的とした前記表面下の像を使用する段階をさらに有する、請求項1に記載の方法。
- 前記半導体素子の方向の整合又は前記集束イオンビームによる前記半導体素子のミリングのための部位を特定する前記表面下の像を使用する段階が、前記像と前記素子の回路図とを関連付ける段階を有する、請求項2に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/098,578 | 2005-04-04 | ||
US11/098,578 US7388218B2 (en) | 2005-04-04 | 2005-04-04 | Subsurface imaging using an electron beam |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2006284590A JP2006284590A (ja) | 2006-10-19 |
JP2006284590A5 JP2006284590A5 (ja) | 2009-05-14 |
JP5719494B2 true JP5719494B2 (ja) | 2015-05-20 |
Family
ID=36609130
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006102293A Active JP5719494B2 (ja) | 2005-04-04 | 2006-04-03 | 電子ビームを用いた表面下の画像化 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7388218B2 (ja) |
EP (1) | EP1717841A1 (ja) |
JP (1) | JP5719494B2 (ja) |
CN (1) | CN1855365B (ja) |
TW (1) | TWI404105B (ja) |
Families Citing this family (21)
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US9159527B2 (en) | 2003-10-16 | 2015-10-13 | Carl Zeiss Microscopy, Llc | Systems and methods for a gas field ionization source |
US8110814B2 (en) | 2003-10-16 | 2012-02-07 | Alis Corporation | Ion sources, systems and methods |
JP4413746B2 (ja) | 2004-10-28 | 2010-02-10 | 株式会社日立ハイテクノロジーズ | 荷電粒子ビーム装置 |
WO2007067296A2 (en) * | 2005-12-02 | 2007-06-14 | Alis Corporation | Ion sources, systems and methods |
EP2149897A1 (en) * | 2008-07-31 | 2010-02-03 | FEI Company | Method for milling and end-pointing a sample |
DE102008041815A1 (de) * | 2008-09-04 | 2010-04-15 | Carl Zeiss Nts Gmbh | Verfahren zur Analyse einer Probe |
WO2011127327A2 (en) * | 2010-04-07 | 2011-10-13 | Fei Company | Combination laser and charged particle beam system |
JP5922125B2 (ja) | 2010-08-31 | 2016-05-24 | エフ・イ−・アイ・カンパニー | 低質量種と高質量種の両方を含むイオン源を使用した誘導および試料処理 |
CN102064077A (zh) * | 2010-12-02 | 2011-05-18 | 北京航空航天大学 | 一种利用同步可控电子束提高聚焦离子束加工精度的方法 |
US8859998B2 (en) | 2011-01-28 | 2014-10-14 | Fei Company | TEM sample preparation |
WO2013082181A1 (en) * | 2011-11-29 | 2013-06-06 | Kla-Tencor Corporation | Systems and methods for preparation of samples for sub-surface defect review |
CN103137531B (zh) * | 2011-12-02 | 2016-09-07 | 无锡华润上华科技有限公司 | 晶圆对位方法 |
JP5986027B2 (ja) * | 2012-03-31 | 2016-09-06 | エフ・イ−・アイ・カンパニー | レーザ・アブレーション中に光学構成部品を保護するシステム |
EP2873088A4 (en) * | 2012-07-16 | 2015-08-05 | Fei Co | DEFINITION OF END POINT FOR FOCUSED ION BEAM TREATMENT |
US8895923B2 (en) * | 2012-11-20 | 2014-11-25 | Dcg Systems, Inc. | System and method for non-contact microscopy for three-dimensional pre-characterization of a sample for fast and non-destructive on sample navigation during nanoprobing |
CN104122282B (zh) * | 2013-04-24 | 2017-01-18 | 泰科英赛科技有限公司 | 采用聚焦离子束的电路跟踪 |
JP6490938B2 (ja) * | 2013-10-24 | 2019-03-27 | 株式会社日立ハイテクサイエンス | 断面加工方法、断面加工装置 |
CN104795302B (zh) | 2013-10-29 | 2018-10-02 | Fei 公司 | 具有用于横切应用的过程自动化的图案识别的差分成像 |
US9558911B2 (en) * | 2014-08-01 | 2017-01-31 | Carl Zeiss Microscopy Gmbh | Method for analyzing and/or processing an object as well as a particle beam device for carrying out the method |
EP3104155A1 (en) | 2015-06-09 | 2016-12-14 | FEI Company | Method of analyzing surface modification of a specimen in a charged-particle microscope |
US20190287762A1 (en) * | 2018-01-25 | 2019-09-19 | Fei Company | System and method of preparing integrated circuits for backside probing using charged particle beams |
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JPH0616391B2 (ja) * | 1984-07-13 | 1994-03-02 | 株式会社日立製作所 | イオンビーム照射装置 |
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JP2519512B2 (ja) * | 1988-08-31 | 1996-07-31 | セイコー電子工業株式会社 | 集束イオンビ―ム装置 |
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JPH08327514A (ja) * | 1995-06-05 | 1996-12-13 | Nippondenso Co Ltd | 透過電子顕微鏡用試料の作製方法及びその装置 |
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-
2005
- 2005-04-04 US US11/098,578 patent/US7388218B2/en active Active
-
2006
- 2006-04-03 JP JP2006102293A patent/JP5719494B2/ja active Active
- 2006-04-03 CN CN2006100793738A patent/CN1855365B/zh active Active
- 2006-04-03 EP EP06112148A patent/EP1717841A1/en not_active Withdrawn
- 2006-04-03 TW TW095111807A patent/TWI404105B/zh active
Also Published As
Publication number | Publication date |
---|---|
US20060219953A1 (en) | 2006-10-05 |
CN1855365B (zh) | 2010-06-09 |
TW200723342A (en) | 2007-06-16 |
TWI404105B (zh) | 2013-08-01 |
JP2006284590A (ja) | 2006-10-19 |
EP1717841A1 (en) | 2006-11-02 |
US7388218B2 (en) | 2008-06-17 |
CN1855365A (zh) | 2006-11-01 |
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