JP5710468B2 - 高温超電導体層配列 - Google Patents
高温超電導体層配列 Download PDFInfo
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- JP5710468B2 JP5710468B2 JP2011502222A JP2011502222A JP5710468B2 JP 5710468 B2 JP5710468 B2 JP 5710468B2 JP 2011502222 A JP2011502222 A JP 2011502222A JP 2011502222 A JP2011502222 A JP 2011502222A JP 5710468 B2 JP5710468 B2 JP 5710468B2
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- 239000002887 superconductor Substances 0.000 title claims description 19
- 239000010410 layer Substances 0.000 claims description 257
- 239000000872 buffer Substances 0.000 claims description 159
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 100
- 239000000463 material Substances 0.000 claims description 96
- 229910052751 metal Inorganic materials 0.000 claims description 69
- 239000002184 metal Substances 0.000 claims description 69
- 150000002910 rare earth metals Chemical class 0.000 claims description 46
- 239000000758 substrate Substances 0.000 claims description 46
- 229910052723 transition metal Inorganic materials 0.000 claims description 46
- 150000003624 transition metals Chemical class 0.000 claims description 45
- 238000000034 method Methods 0.000 claims description 36
- 238000000137 annealing Methods 0.000 claims description 35
- 239000000243 solution Substances 0.000 claims description 33
- 150000002739 metals Chemical class 0.000 claims description 32
- 239000013078 crystal Substances 0.000 claims description 28
- 239000010949 copper Substances 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 239000002243 precursor Substances 0.000 claims description 10
- 229910052735 hafnium Inorganic materials 0.000 claims description 9
- 230000003647 oxidation Effects 0.000 claims description 9
- 238000007254 oxidation reaction Methods 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 229910052709 silver Inorganic materials 0.000 claims description 8
- 229910052726 zirconium Inorganic materials 0.000 claims description 8
- 229910001404 rare earth metal oxide Inorganic materials 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 5
- 125000005599 alkyl carboxylate group Chemical group 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 5
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052785 arsenic Inorganic materials 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 239000002356 single layer Substances 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 239000007864 aqueous solution Substances 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 239000003960 organic solvent Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 229910052714 tellurium Inorganic materials 0.000 claims description 3
- 229910052720 vanadium Inorganic materials 0.000 claims description 3
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 239000013522 chelant Substances 0.000 claims 1
- 239000002131 composite material Substances 0.000 claims 1
- 239000012071 phase Substances 0.000 description 32
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 22
- 229910052746 lanthanum Inorganic materials 0.000 description 21
- 229910000420 cerium oxide Inorganic materials 0.000 description 18
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 16
- 229910052684 Cerium Inorganic materials 0.000 description 15
- 229910052688 Gadolinium Inorganic materials 0.000 description 14
- 150000002602 lanthanoids Chemical class 0.000 description 13
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 13
- 229910052772 Samarium Inorganic materials 0.000 description 12
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 12
- 238000000576 coating method Methods 0.000 description 12
- 229910052693 Europium Inorganic materials 0.000 description 11
- 229910052769 Ytterbium Inorganic materials 0.000 description 11
- 239000007789 gas Substances 0.000 description 11
- 229910052747 lanthanoid Inorganic materials 0.000 description 11
- 235000019260 propionic acid Nutrition 0.000 description 11
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 11
- 229910052727 yttrium Inorganic materials 0.000 description 11
- 229910052779 Neodymium Inorganic materials 0.000 description 10
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 9
- 230000007704 transition Effects 0.000 description 9
- -1 lanthanides Chemical class 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 7
- 229910021645 metal ion Inorganic materials 0.000 description 7
- 230000007935 neutral effect Effects 0.000 description 7
- 239000002904 solvent Substances 0.000 description 7
- 238000000224 chemical solution deposition Methods 0.000 description 6
- 238000001035 drying Methods 0.000 description 6
- 238000002844 melting Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 5
- 150000001342 alkaline earth metals Chemical class 0.000 description 5
- 238000000354 decomposition reaction Methods 0.000 description 5
- 229910044991 metal oxide Inorganic materials 0.000 description 5
- 150000004706 metal oxides Chemical class 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910052768 actinide Inorganic materials 0.000 description 4
- 150000001255 actinides Chemical class 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229910052758 niobium Inorganic materials 0.000 description 4
- 239000010955 niobium Substances 0.000 description 4
- 239000011148 porous material Substances 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052788 barium Inorganic materials 0.000 description 3
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- LZJJVTQGPPWQFS-UHFFFAOYSA-L copper;propanoate Chemical compound [Cu+2].CCC([O-])=O.CCC([O-])=O LZJJVTQGPPWQFS-UHFFFAOYSA-L 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 3
- 229910001928 zirconium oxide Inorganic materials 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 239000005751 Copper oxide Substances 0.000 description 2
- 229910052692 Dysprosium Inorganic materials 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 2
- 229910052689 Holmium Inorganic materials 0.000 description 2
- 229910052765 Lutetium Inorganic materials 0.000 description 2
- 229910052777 Praseodymium Inorganic materials 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 229910052771 Terbium Inorganic materials 0.000 description 2
- 229910052775 Thulium Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- MRWDOMBCUHOHAE-UHFFFAOYSA-K cerium(3+);propanoate Chemical compound [Ce+3].CCC([O-])=O.CCC([O-])=O.CCC([O-])=O MRWDOMBCUHOHAE-UHFFFAOYSA-K 0.000 description 2
- HSJPMRKMPBAUAU-UHFFFAOYSA-N cerium(3+);trinitrate Chemical compound [Ce+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O HSJPMRKMPBAUAU-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 150000001860 citric acid derivatives Chemical class 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 229910000431 copper oxide Inorganic materials 0.000 description 2
- OPQARKPSCNTWTJ-UHFFFAOYSA-L copper(ii) acetate Chemical compound [Cu+2].CC([O-])=O.CC([O-])=O OPQARKPSCNTWTJ-UHFFFAOYSA-L 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000010436 fluorite Substances 0.000 description 2
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- NCRUJFPNHKQCJG-UHFFFAOYSA-K lanthanum(3+);propanoate Chemical compound [La+3].CCC([O-])=O.CCC([O-])=O.CCC([O-])=O NCRUJFPNHKQCJG-UHFFFAOYSA-K 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 150000002823 nitrates Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 229910052574 oxide ceramic Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- IUGYQRQAERSCNH-UHFFFAOYSA-N pivalic acid Chemical compound CC(C)(C)C(O)=O IUGYQRQAERSCNH-UHFFFAOYSA-N 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000004549 pulsed laser deposition Methods 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910000314 transition metal oxide Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 229910014454 Ca-Cu Inorganic materials 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- FTXCZFWIMKNBMY-UHFFFAOYSA-M [O-2].[Ce+3].C(C)(=O)[O-].[Ce+3] Chemical compound [O-2].[Ce+3].C(C)(=O)[O-].[Ce+3] FTXCZFWIMKNBMY-UHFFFAOYSA-M 0.000 description 1
- JARCJFQYBUAQLL-UHFFFAOYSA-N [O-2].[Ce+3].[N+](=O)([O-])[O-].[Ce+3] Chemical compound [O-2].[Ce+3].[N+](=O)([O-])[O-].[Ce+3] JARCJFQYBUAQLL-UHFFFAOYSA-N 0.000 description 1
- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
- 125000005595 acetylacetonate group Chemical group 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 150000004645 aluminates Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- AOWKSNWVBZGMTJ-UHFFFAOYSA-N calcium titanate Chemical compound [Ca+2].[O-][Ti]([O-])=O AOWKSNWVBZGMTJ-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000007942 carboxylates Chemical class 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- DRVWBEJJZZTIGJ-UHFFFAOYSA-N cerium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ce+3].[Ce+3] DRVWBEJJZZTIGJ-UHFFFAOYSA-N 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 206010016165 failure to thrive Diseases 0.000 description 1
- LYQGMALGKYWNIU-UHFFFAOYSA-K gadolinium(3+);triacetate Chemical compound [Gd+3].CC([O-])=O.CC([O-])=O.CC([O-])=O LYQGMALGKYWNIU-UHFFFAOYSA-K 0.000 description 1
- 229910000856 hastalloy Inorganic materials 0.000 description 1
- XMHIUKTWLZUKEX-UHFFFAOYSA-N hexacosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCCCCCCCC(O)=O XMHIUKTWLZUKEX-UHFFFAOYSA-N 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- LBSANEJBGMCTBH-UHFFFAOYSA-N manganate Chemical compound [O-][Mn]([O-])(=O)=O LBSANEJBGMCTBH-UHFFFAOYSA-N 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002738 metalloids Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000012908 multicomponent buffer Substances 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 125000002524 organometallic group Chemical class 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 229950010765 pivalate Drugs 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- TVCBSVKTTHLKQC-UHFFFAOYSA-M propanoate;zirconium(4+) Chemical compound [Zr+4].CCC([O-])=O TVCBSVKTTHLKQC-UHFFFAOYSA-M 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- CQLFBEKRDQMJLZ-UHFFFAOYSA-M silver acetate Chemical compound [Ag+].CC([O-])=O CQLFBEKRDQMJLZ-UHFFFAOYSA-M 0.000 description 1
- 229940071536 silver acetate Drugs 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 150000003892 tartrate salts Chemical class 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- 238000009997 thermal pre-treatment Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000005068 transpiration Effects 0.000 description 1
- 238000001291 vacuum drying Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
- H10N60/0632—Intermediate layers, e.g. for growth control
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49014—Superconductor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/249921—Web or sheet containing structurally defined element or component
- Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
- Compositions Of Oxide Ceramics (AREA)
Description
無水プロピオン酸セリウムをプロピオン酸に溶解し、0.2モル溶液を得る。
酢酸セリウムをプロピオン酸に溶解し、0.2モル溶液を得る。セリウムに対し酢酸銅10原子%を前記溶液に添加し、次いで、全金属イオン濃度が0.2モルとなるまで再度プロピオン酸で希釈し、コーティング溶液を調製する。
酢酸セリウムと酢酸ガドリニウム(割合4:1)とをプロピオン酸で希釈し、全金属イオン濃度が0.2モルの溶液を得る。セリウム及びガドリニウムの合計量に対し酢酸銅15原子%を前記溶液に添加し、次いで、全金属イオン濃度が0.2モルとなるまで再度プロピオン酸で希釈し、コーティング溶液を調製する。
セリウムアセチルアセトネートをプロピオン酸に溶解し、0.2モル溶液を得る。セリウムに対し酢酸銀10原子%を前記溶液に添加し、次いで、全金属イオン濃度が0.2モルとなるまで再度プロピオン酸で希釈し、コーティング溶液を調製する。
硝酸セリウムと硝酸銅(割合9:1)とを、全金属イオン:クエン酸=1:3の割合でクエン酸に溶解する。アンモニアと水とを添加して、pH6の0.2モル溶液を調製する。
硝酸セリウムとクエン酸とを水に溶解し、セリウムイオン濃度が0.2モルの溶液を得る。前記溶液中、クエン酸に対する金属イオンの割合は、1:6である。アンモニウムと水とを添加し、pH6.4の溶液を調製する。
プロピオン酸ランタン、プロピオン酸ジルコニウム、及びプロピオン酸銅を、モル比9:9:1にて、プロピオン酸に溶解し、ランタン濃度が0.4モルの溶液を得る。
プロピオン酸ランタン、プロピオン酸セリウム、及びプロピオン酸銅を、モル比9:9:1にて、プロピオン酸に溶解し、ランタン濃度が0.4モルの溶液を得る。
Claims (28)
- 少なくとも1つの基板と、酸化物材料から作られた少なくとも1つの配向したバッファ層とを含み、高温超電導体(HTSC)層の配向成長を可能にする高温超電導体層配置であり、前記バッファ層は、均質な混晶相を形成する追加成分を少なくとも1種含有し、当該追加成分はTi、V、Cr、Mn、Ag、B、Si、Ge、As、Se、Sb、Te、これらの酸化物、及びそれらの組み合わせから選択され、前記追加成分を溶解する前記バッファ層材料が、二元もしくは多元希土類酸化物であり、前記二元もしくは多元希土類酸化物の金属成分の一部もしくは全部が希土類元素であり、且つ2種以上の異なる希土類元素が含有されることを特徴とする層配置。
- 請求項1にかかる層配置において、前記追加成分のうちの遷移金属が銀であることを特徴とする層配置。
- 請求項1もしくは2にかかる層配置において、前記追加成分が、前記バッファ層の全金属量に対し40原子%までの濃度にて存在することを特徴とする層配置。
- 請求項3にかかる層配置において、前記追加成分が、前記バッファ層の全金属量に対し2〜30原子%の濃度にて存在することを特徴とする層配置。
- 請求項1〜4のいずれかにかかる層配置において、前記追加成分を含有する前記バッファ層材料が、1,250℃以下のアニール温度にて、少なくとも部分溶融することを特徴とする層配置。
- 請求項1または2にかかる層配置において、前記追加成分を溶解する前記バッファ層材料が、一般式RE2+xM2+yOz(式中、−2≦x、y≦2、REは1種以上の希土類元素であり、Mは、1種以上の二価、三価、四価、もしくは五価金属(希土類元素を含む)である。)を有する希土類元素酸化物であることを特徴とする層配置。
- 請求項6にかかる層配置において、Mが、希土類元素、ハフニウム、ジルコニウムからなる群から選択される1種以上の金属であることを特徴とする層配置。
- 請求項6もしくは7にかかる層配置において、RE及び/又はMが、互いに独立して、遷移金属及び/又はメイングループ金属に部分置換される、もしくは、Mが遷移金属、メイングループ金属、もしくはそれらの組み合わせで構成されることを特徴とする層配置。
- 請求項1〜8のいずれかにかかる層配置において、前記追加成分を含有する前記バッファ層の空隙率が、25%以下であることを特徴とする層配置。
- 請求項1〜9のいずれかにかかる層配置において、前記追加成分を含有する前記バッファ層のRMS粗さが、1.8nm以下であることを特徴とする層配置。
- 請求項1〜10のいずれかにかかる層配置において、前記バッファ層が多層であり、且つ、前記追加成分を含有する前記の混晶相バッファ層が、前記基板上に位置することを特徴とする層配置。
- 請求項1〜11のいずれかにかかる層配置において、前記バッファ層が多層であり、且つ、前記追加成分を含有する前記の混晶相バッファ層が、前記高温超電導体層に隣接する層を形成することを特徴とする層配置。
- 請求項1〜12のいずれかにかかる層配置において、前記基板と前記HTSC層の間に位置する前記バッファ層が、均質な混晶相を形成する追加成分の層のみを有することを特徴とする層配置。
- 請求項1〜13のいずれかにかかる層配置において、前記バッファ層が、単層構造のみからなることを特徴とする層配置。
- 高温超電導体の配向成長を可能にする配向したバッファ層が、基板に塗布されている高温超電導体層配置の製造方法であり、該方法は、均質な混合晶を形成するTi、V、Cr、Mn、Cu、Ag、B、Si、Ge、As、Se、Sb、Te、これらの酸化物、及びそれらの組み合わせから選択される少なくとも1種の追加成分を、前記バッファ層に導入するものであり、前記バッファ層材料と前記追加成分を共に又は別々に、有機溶媒または水の溶液の形態で基板に塗布するものであり、前記追加成分を溶解する前記バッファ層材料は、二元もしくは多元希土類酸化物であり、前記二元もしくは多元希土類酸化物の金属成分の一部もしくは全部が希土類元素であり、且つ2種以上の異なる希土類元素を含有することを特徴とする方法。
- 請求項15にかかる方法において、前記追加成分として銅及び/又は銀が使用される段階を含むことを特徴とする方法。
- 請求項15または16に係る方法において、前記少なくとも1種の追加成分が、前記バッファ層の全金属量に対し40原子%までの濃度にて添加される段階を含むことを特徴とする方法。
- 請求項15〜17のいずれかに係る方法において、前記少なくとも1種の追加成分は、結果として得られる前記バッファ層材料が1,600℃以下のアニール温度にて少なくとも部分溶解するよう添加される段階を含むことを特徴とする方法。
- 請求項18にかかる方法において、前記アニール温度が1,250℃以下である方法。
- 請求項15〜19のいずれかにかかる方法において、前記追加成分を溶解する前記バッファ層材料として、一般式RE2−xM2−yO7±2z(式中、0≦x、y、z≦1、REは2種以上の希土類元素であり、Mは、1種以上の二価、三価、四価、もしくは五価金属(希土類元素を含む)である。)を有する希土類元素酸化物を使用する段階を含むことを特徴とする方法。
- 請求項15〜20のいずれかにかかる方法において、前記バッファ層が多層として塗布される段階と、前記追加成分を含有する前記の混晶相バッファ層が、前記基板上に形成される段階、及び/又は、前記高温超電導体層に隣接する層として形成される段階とを含むことを特徴とする方法。
- 請求項15〜21のいずれかにかかる方法において、前記バッファ層を、均質な混晶相を形成する追加成分を有する単層のみ、もしくは多層により形成する段階を含むことを特徴とする方法。
- 請求項15〜22のいずれかにかかる方法において、前記追加成分及び前記バッファ層材料、及び/又はその各前駆体が、化学溶液によって、共にもしくは個別に、基板上に被着される段階と、被覆された基板にアニール処理を行い、前記追加成分を含有する均質な混晶相が形成される段階とを含むことを特徴とする方法。
- 請求項15〜23のいずれかにかかる方法において、前記バッファ層材料及び/又は前記追加成分の金属成分(前駆体を含む)が、アルキルカルボン酸塩、アセチルアセトネート、もしくは、有機溶媒中のキレート形成複合体として、前記基板もしくは存在するバッファ層に、少なくとも部分的、もしくは全体的に塗布される段階を含むことを特徴とする方法。
- 請求項15〜24のいずれかにかかる方法において、前記バッファ層材料及び/又は前記追加成分の金属成分(各前駆体を含む)が、水溶液中の水溶性化合物の形態にて、前記基板もしくは存在するバッファ材料層に塗布される段階を含むことを特徴とする方法。
- 請求項15〜25のいずれかにかかる方法において、前記追加成分を含有する前記バッファ層の作製におけるアニール処理の少なくとも一部が、還元雰囲気下で行われることを特徴とする方法。
- 請求項15〜26のいずれかにかかる方法において、前記追加成分を含有する前記バッファ層の作製におけるアニール処理が、前記バッファ層の空隙率が25%以下となるように行われることを特徴とする方法。
- 請求項15〜27のいずれかにかかる方法において、前記追加成分を含有する前記バッファ層の作製におけるアニール処理が、前記バッファ層のRMS粗さが1.8nm以下となるように行われることを特徴とする方法。
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