JP5692060B2 - アダマンタン誘導体、その製造方法およびそれを原料とする重合体、並びに樹脂組成物 - Google Patents
アダマンタン誘導体、その製造方法およびそれを原料とする重合体、並びに樹脂組成物 Download PDFInfo
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- JP5692060B2 JP5692060B2 JP2011502704A JP2011502704A JP5692060B2 JP 5692060 B2 JP5692060 B2 JP 5692060B2 JP 2011502704 A JP2011502704 A JP 2011502704A JP 2011502704 A JP2011502704 A JP 2011502704A JP 5692060 B2 JP5692060 B2 JP 5692060B2
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C67/00—Preparation of carboxylic acid esters
- C07C67/08—Preparation of carboxylic acid esters by reacting carboxylic acids or symmetrical anhydrides with the hydroxy or O-metal group of organic compounds
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
- C07C69/52—Esters of acyclic unsaturated carboxylic acids having the esterified carboxyl group bound to an acyclic carbon atom
- C07C69/533—Monocarboxylic acid esters having only one carbon-to-carbon double bond
- C07C69/54—Acrylic acid esters; Methacrylic acid esters
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
- C07C69/74—Esters of carboxylic acids having an esterified carboxyl group bound to a carbon atom of a ring other than a six-membered aromatic ring
- C07C69/757—Esters of carboxylic acids having an esterified carboxyl group bound to a carbon atom of a ring other than a six-membered aromatic ring having any of the groups OH, O—metal, —CHO, keto, ether, acyloxy, groups, groups, or in the acid moiety
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F20/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
- C08F20/02—Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
- C08F20/10—Esters
- C08F20/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F20/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
- C08F220/283—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing one or more carboxylic moiety in the chain, e.g. acetoacetoxyethyl(meth)acrylate
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C2603/00—Systems containing at least three condensed rings
- C07C2603/56—Ring systems containing bridged rings
- C07C2603/58—Ring systems containing bridged rings containing three rings
- C07C2603/70—Ring systems containing bridged rings containing three rings containing only six-membered rings
- C07C2603/74—Adamantanes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
- C08F220/282—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing two or more oxygen atoms
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Materials For Photolithography (AREA)
Description
攪拌機、温度計、滴下ロート、ジムロート冷却器を備えたフラスコに、1,3−アダマンタンジオール100g、96重量%濃硫酸1200gを仕込み、ギ酸50gを1時間かけて滴下し、引き続き25℃で10時間反応させた。反応溶液を、氷冷した水2000gに少しずつ加えたところ、結晶が析出した。析出した結晶をガラスロートで吸引ろ過したところ、1,3−アダマンタンジカルボン酸113gを得た。
Claims (1)
- 下記式(8)で表されるアダマンタンアルコール類と、下記式(9)または(10)で表されるアクリル酸化合物とを反応させて、式(1)で表されるアダマンタン誘導体を製造する方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011502704A JP5692060B2 (ja) | 2009-03-03 | 2010-02-10 | アダマンタン誘導体、その製造方法およびそれを原料とする重合体、並びに樹脂組成物 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009049224 | 2009-03-03 | ||
JP2009049224 | 2009-03-03 | ||
JP2011502704A JP5692060B2 (ja) | 2009-03-03 | 2010-02-10 | アダマンタン誘導体、その製造方法およびそれを原料とする重合体、並びに樹脂組成物 |
PCT/JP2010/051971 WO2010101010A1 (ja) | 2009-03-03 | 2010-02-10 | アダマンタン誘導体、その製造方法およびそれを原料とする重合体、並びに樹脂組成物 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2010101010A1 JPWO2010101010A1 (ja) | 2012-09-06 |
JP5692060B2 true JP5692060B2 (ja) | 2015-04-01 |
Family
ID=42709572
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2011502704A Active JP5692060B2 (ja) | 2009-03-03 | 2010-02-10 | アダマンタン誘導体、その製造方法およびそれを原料とする重合体、並びに樹脂組成物 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8598292B2 (ja) |
JP (1) | JP5692060B2 (ja) |
KR (1) | KR101646813B1 (ja) |
CN (1) | CN102341366A (ja) |
TW (1) | TWI460160B (ja) |
WO (1) | WO2010101010A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5655855B2 (ja) * | 2010-03-31 | 2015-01-21 | Jsr株式会社 | 感放射線性樹脂組成物、レジストパターン形成方法、重合体及び化合物 |
JP6902905B2 (ja) * | 2017-03-31 | 2021-07-14 | 東京応化工業株式会社 | レジスト組成物及びレジストパターン形成方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08259626A (ja) * | 1995-01-26 | 1996-10-08 | Nec Corp | ビニルモノマー、重合体、フォトレジスト組成物、及びそれを用いたパターン形成方法 |
JP2000136165A (ja) * | 1998-05-25 | 2000-05-16 | Daicel Chem Ind Ltd | 酸感応性化合物及びフォトレジスト用樹脂組成物 |
JP2005035920A (ja) * | 2003-07-14 | 2005-02-10 | Daicel Chem Ind Ltd | 重合性アダマンタン誘導体とその製造法、及び高分子化合物 |
JP2006016379A (ja) * | 2004-01-19 | 2006-01-19 | Mitsubishi Gas Chem Co Inc | アダマンタン誘導体およびそれを原料とする樹脂組成物 |
JP2010091638A (ja) * | 2008-10-03 | 2010-04-22 | Fujifilm Corp | レジストパターンの表面処理方法及び該表面処理方法を用いたレジストパターンの形成方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60244538A (ja) | 1984-05-19 | 1985-12-04 | 大倉工業株式会社 | 多孔性シ−ト状物を重ね合したポリマ−セメント板の製造方法 |
JPS6453633A (en) | 1988-07-19 | 1989-03-01 | Sony Corp | Shield card device |
JP2881969B2 (ja) | 1990-06-05 | 1999-04-12 | 富士通株式会社 | 放射線感光レジストとパターン形成方法 |
JP2774229B2 (ja) | 1993-04-27 | 1998-07-09 | 帝人化成株式会社 | 光学用成形品 |
JP3819531B2 (ja) | 1997-05-20 | 2006-09-13 | 富士通株式会社 | レジスト組成物及びレジストパターン形成方法 |
US20030180662A1 (en) * | 1998-05-25 | 2003-09-25 | Daicel Chemical Industries, Ltd. | Acid-sensitive compound and resin composition for photoresist |
WO1999061956A1 (fr) | 1998-05-25 | 1999-12-02 | Daicel Chemical Industries, Ltd. | Composes pour photoresist et composition de resine pour photoresist |
JP4434358B2 (ja) | 1998-05-25 | 2010-03-17 | ダイセル化学工業株式会社 | フォトレジスト用化合物およびフォトレジスト用樹脂組成物 |
KR20010099670A (ko) * | 1999-08-05 | 2001-11-09 | 고지마 아끼로, 오가와 다이스께 | 포토레지스트용 고분자 화합물 및 포토레지스트용 수지조성물 |
JP3836359B2 (ja) | 2001-12-03 | 2006-10-25 | 東京応化工業株式会社 | ポジ型レジスト組成物及びレジストパターン形成方法 |
US7078562B2 (en) * | 2004-01-19 | 2006-07-18 | Mitsubishi Gas Chemical Company, Inc. | Adamantane derivatives and resin compositions using the same as raw material |
US8057832B2 (en) | 2006-09-13 | 2011-11-15 | Kraft Foods Global Brands Llc | Microwavable food products |
-
2010
- 2010-02-10 WO PCT/JP2010/051971 patent/WO2010101010A1/ja active Application Filing
- 2010-02-10 KR KR1020117022820A patent/KR101646813B1/ko active IP Right Grant
- 2010-02-10 US US13/254,231 patent/US8598292B2/en not_active Expired - Fee Related
- 2010-02-10 JP JP2011502704A patent/JP5692060B2/ja active Active
- 2010-02-10 CN CN2010800104886A patent/CN102341366A/zh active Pending
- 2010-02-26 TW TW099105554A patent/TWI460160B/zh not_active IP Right Cessation
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08259626A (ja) * | 1995-01-26 | 1996-10-08 | Nec Corp | ビニルモノマー、重合体、フォトレジスト組成物、及びそれを用いたパターン形成方法 |
JP2000136165A (ja) * | 1998-05-25 | 2000-05-16 | Daicel Chem Ind Ltd | 酸感応性化合物及びフォトレジスト用樹脂組成物 |
JP2005035920A (ja) * | 2003-07-14 | 2005-02-10 | Daicel Chem Ind Ltd | 重合性アダマンタン誘導体とその製造法、及び高分子化合物 |
JP2006016379A (ja) * | 2004-01-19 | 2006-01-19 | Mitsubishi Gas Chem Co Inc | アダマンタン誘導体およびそれを原料とする樹脂組成物 |
JP2010091638A (ja) * | 2008-10-03 | 2010-04-22 | Fujifilm Corp | レジストパターンの表面処理方法及び該表面処理方法を用いたレジストパターンの形成方法 |
Also Published As
Publication number | Publication date |
---|---|
TWI460160B (zh) | 2014-11-11 |
TW201038530A (en) | 2010-11-01 |
WO2010101010A1 (ja) | 2010-09-10 |
KR101646813B1 (ko) | 2016-08-08 |
US20110319584A1 (en) | 2011-12-29 |
CN102341366A (zh) | 2012-02-01 |
KR20110124334A (ko) | 2011-11-16 |
JPWO2010101010A1 (ja) | 2012-09-06 |
US8598292B2 (en) | 2013-12-03 |
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