JP5685020B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 58
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 48
- 229910052710 silicon Inorganic materials 0.000 claims description 48
- 239000010703 silicon Substances 0.000 claims description 48
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 39
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 39
- 238000010438 heat treatment Methods 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 21
- 150000004767 nitrides Chemical class 0.000 claims description 21
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 17
- 239000001301 oxygen Substances 0.000 claims description 17
- 229910052760 oxygen Inorganic materials 0.000 claims description 17
- 238000000137 annealing Methods 0.000 claims description 11
- 239000012298 atmosphere Substances 0.000 claims description 2
- 229910002601 GaN Inorganic materials 0.000 description 10
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 7
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 6
- 238000005247 gettering Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3228—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of AIIIBV compounds, e.g. to make them semi-insulating
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
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- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
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- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Description
装置:平行平板型プラズマCVD装置
炉内温度:250〜350℃
気圧:0.8〜1.0Torr(106.64〜133.3Pa)
電力:25〜75W
材料及び流量:
SiH4(モノシラン):N2:He=3〜6:200〜600:500〜900sccm
(5.07×10−3〜10.14×10−3:338×10−3〜1014×10−3:845×10−3〜1520.9×10−3Pa・m3/sec)
材料及び流量:
SiH4:NH3(アンモニア):N2:He=3〜6:0〜2:200〜600:500〜900sccm
(5.07×10−3〜10.14×10−3:0〜3.38×10−3:338×10−3〜1014×10−3:845×10−3〜1520.9×10−3Pa・m3/sec)
窒化物半導体層 11
バリア層 12
チャネル層 14
電子供給層 16
キャップ層 18
Si層 20
SiN層 22,24
ソース電極 26
ドレイン電極 28
ゲート電極 30
配線層 32
Claims (9)
- FETのチャネル層を含む窒化物半導体層の上面にシリコン層を形成する工程と、
前記シリコン層を除去することで露出した前記窒化物半導体層の上面に、オーミック電極を形成する工程と、
前記シリコン層を形成する工程において、又は前記シリコン層を形成する工程の後に、熱処理を行う工程と、
前記シリコン層を形成する工程の後に、前記シリコン層の上面に絶縁層を形成する工程と、を有することを特徴とする半導体装置の製造方法。 - FETのチャネル層を含む窒化物半導体層の上面にシリコン層を形成する工程と、
前記シリコン層を形成する工程において、又は前記シリコン層を形成する工程の後に、熱処理を行う工程と、
前記シリコン層を形成する工程の後に、前記シリコン層の上面に絶縁層を形成する工程と、を有し、
前記絶縁層は、窒化シリコン層であり、
前記シリコン層を形成する工程と、前記窒化シリコン層を形成する工程とは、同じ装置を用いて行う工程であることを特徴とする半導体装置の製造方法。 - 前記シリコン層を形成する工程は、厚さ1nm以上、10nm以下の前記シリコン層を形成する工程であることを特徴とする請求項1または2に記載の半導体装置の製造方法。
- 前記絶縁層を形成する工程は、前記シリコン層を形成する工程の後であって前記熱処理を行う工程の前に行われることを特徴とする請求項1から3のいずれか一項に記載の半導体装置の製造方法。
- 前記絶縁層は、窒化シリコン層であり、
前記シリコン層を形成する工程と、前記窒化シリコン層を形成する工程とは、同じ装置を用いて行う工程であることを特徴とする請求項1に記載の半導体装置の製造方法。 - 前記シリコン層を形成する工程の後に、前記窒化物半導体層の上面にオーミック電極を形成する工程を有し、
前記オーミック電極を形成する工程は、前記オーミック電極のアニールを行う工程を含み、
前記熱処理を行う工程は、前記オーミック電極のアニールを行う工程であることを特徴とする請求項2記載の半導体装置の製造方法。 - 前記熱処理を行う工程は、前記シリコン層を形成する際に加えられる熱によって熱処理を行う工程であることを特徴とする請求項1から5いずれか一項記載の半導体装置の製造方法。
- 前記熱処理を行う工程は、酸素を含まない雰囲気中で熱処理を行う工程であることを特徴とする請求項1から7いずれか一項記載の半導体装置の製造方法。
- 前記オーミック電極を形成する工程は、前記シリコン層の一部を除去することで露出した前記窒化物半導体層の上面に、前記オーミック電極を形成する工程であり、かつ前記オーミック電極のアニールを行う工程を含み、
前記オーミック電極を形成する工程の後、前記オーミック電極間において前記シリコン層は残存し、
前記熱処理を行う工程は、前記オーミック電極のアニールを行う工程であることを特徴とする請求項1記載の半導体装置の製造方法。
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JP2010166321A JP5685020B2 (ja) | 2010-07-23 | 2010-07-23 | 半導体装置の製造方法 |
US13/186,111 US8815664B2 (en) | 2010-07-23 | 2011-07-19 | Method for fabricating semiconductor device |
US14/331,744 US9263544B2 (en) | 2010-07-23 | 2014-07-15 | Method for fabricating semiconductor device |
US14/989,249 US9627222B2 (en) | 2010-07-23 | 2016-01-06 | Method for fabricating nitride semiconductor device with silicon layer |
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JP4794655B2 (ja) * | 2009-06-09 | 2011-10-19 | シャープ株式会社 | 電界効果トランジスタ |
JP5685020B2 (ja) * | 2010-07-23 | 2015-03-18 | 住友電気工業株式会社 | 半導体装置の製造方法 |
JP2012033689A (ja) * | 2010-07-30 | 2012-02-16 | Sumitomo Electric Device Innovations Inc | 半導体装置の製造方法 |
JP2012049204A (ja) * | 2010-08-25 | 2012-03-08 | New Japan Radio Co Ltd | 窒化物半導体装置及びその製造方法 |
US8981332B2 (en) * | 2013-03-15 | 2015-03-17 | Intermolecular, Inc. | Nonvolatile resistive memory element with an oxygen-gettering layer |
JP2014199864A (ja) * | 2013-03-29 | 2014-10-23 | 住友電工デバイス・イノベーション株式会社 | 半導体装置及びその製造方法 |
JP6192190B2 (ja) * | 2014-03-11 | 2017-09-06 | 富士電機株式会社 | 炭化珪素半導体装置の製造方法および炭化珪素半導体装置 |
US9580304B2 (en) | 2015-05-07 | 2017-02-28 | Texas Instruments Incorporated | Low-stress low-hydrogen LPCVD silicon nitride |
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JPH0513448A (ja) * | 1990-11-30 | 1993-01-22 | Nikko Kyodo Co Ltd | 半導体装置 |
JP4439955B2 (ja) * | 2004-03-15 | 2010-03-24 | パナソニック株式会社 | 半導体装置及び半導体レーザ装置の製造方法 |
JP5242156B2 (ja) * | 2005-06-03 | 2013-07-24 | 古河電気工業株式会社 | Iii−v族窒化物系化合物半導体装置、及び電極形成方法 |
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JP5217151B2 (ja) * | 2006-08-25 | 2013-06-19 | 日亜化学工業株式会社 | 電界効果トランジスタ及びその製造方法 |
WO2008041277A1 (fr) * | 2006-09-29 | 2008-04-10 | Fujitsu Limited | Dispositif à semi-conducteur a base de composé et processus de fabrication correspondant |
JP5520432B2 (ja) * | 2006-10-03 | 2014-06-11 | 古河電気工業株式会社 | 半導体トランジスタの製造方法 |
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JP5345328B2 (ja) * | 2008-02-22 | 2013-11-20 | 住友電工デバイス・イノベーション株式会社 | 半導体装置の製造方法 |
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JP5685020B2 (ja) * | 2010-07-23 | 2015-03-18 | 住友電気工業株式会社 | 半導体装置の製造方法 |
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