JP5664556B2 - 磁気抵抗効果素子及びそれを用いた磁気ランダムアクセスメモリ - Google Patents
磁気抵抗効果素子及びそれを用いた磁気ランダムアクセスメモリ Download PDFInfo
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- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
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- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
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- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1653—Address circuits or decoders
- G11C11/1655—Bit-line or column circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
- G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
- G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
- G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
- G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
- G11C19/0841—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation using electric current
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- H—ELECTRICITY
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- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3286—Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
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- H10N50/85—Magnetic active materials
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- G—PHYSICS
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- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/74—Array wherein each memory cell has more than one access device
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/79—Array wherein the access device being a transistor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3295—Spin-exchange coupled multilayers wherein the magnetic pinned or free layers are laminated without anti-parallel coupling within the pinned and free layers
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- Mram Or Spin Memory Techniques (AREA)
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- Thin Magnetic Films (AREA)
Description
すなわち、磁壁移動層10は少なくとも一つの磁壁12(12a又は12b)を有し、その磁壁12の位置は磁化自由領域13の磁化方向に対応している。従って、磁壁移動層10は、その磁壁12の位置に対応してデータを記憶している。
きる。すなわち、磁壁移動層10の異方性磁界の値をその材料の本来の値から低下させることで、磁壁移動を起こす書き込み電流の値を更に低減することができる。
Claims (10)
- 垂直磁気異方性を有するCo膜とNi膜との第1積層膜で形成された磁壁移動層と、
前記磁壁移動層上に設けられ、非磁性体で形成されたスペーサ層と、
前記スペーサ層上に設けられ、強磁性体で形成され、磁化が固定された参照層と
を具備し、
前記磁壁移動層は、少なくとも一つの磁壁を有し、前記磁壁の位置に対応して情報を記憶し、
前記磁壁移動層の前記第1積層膜において、前記Co膜の厚みは、0.3nmであり、前記Ni膜の厚みは、0.6nmであり、
前記第1積層膜の(111)配向の度合いは、前記第1積層膜が垂直磁気異方性を保ち得る配向度より大きく、かつ、100%より小さく、
強磁性体のd電子のエネルギー準位を上げて、フェルミエネルギー付近のd電子を増加させるために、前記磁壁移動層の異方性磁界は、前記磁壁移動層が垂直磁気異方性を保ち得る値より大きく、かつ、前記磁壁移動層の強磁性体本来の異方性磁界の値より小さい
磁気抵抗効果素子。 - 垂直磁気異方性を有するCo膜とNi膜との第1積層膜で形成された磁壁移動層と、
前記磁壁移動層上に設けられ、非磁性体で形成されたスペーサ層と、
前記スペーサ層上に設けられ、強磁性体で形成され、磁化が固定された参照層と、
前記第1積層膜下に設けられた下地層と
を具備し、
前記磁壁移動層は、前記第1積層膜の界面において界面磁気異方性が発現する前記磁壁移動層であって、少なくとも一つの磁壁を有し、前記磁壁の位置に対応して情報を記憶し、
前記下地層は、Ta膜の膜上にPt膜が存在する第2積層膜で形成され、
前記Pt膜の厚みは、1.6nm以下であり、
前記磁壁移動層の異方性磁界は、8kOeより大きく、15kOeより小さい
磁気抵抗効果素子。 - 請求項2に記載の磁気抵抗効果素子において、
前記第1積層膜の(111)配向の度合いは、前記第1積層膜が垂直磁気異方性を保ち得る配向度より大きく、100%より小さい
磁気抵抗効果素子。 - 請求項1に記載の磁気抵抗効果素子において、
前記第1積層膜下に設けられ、Pt膜とTa膜との第2積層膜で形成された下地層を更に具備し、
前記第1積層膜に接する前記Pt膜の(111)配向の度合いは、前記第1積層膜が垂直磁気異方性を保ち得る配向度より大きく、100%より小さい
磁気抵抗効果素子。 - 請求項1に記載の磁気抵抗効果素子において、
前記第1積層膜下に設けられ、Pt膜とTa膜との第2積層膜で形成された下地層を更に具備し、
前記第1積層膜に接する前記Pt膜は、長周期構造を有する
磁気抵抗効果素子。 - 請求項4または5に記載の磁気抵抗効果素子において、
前記Pt膜の厚みは、1.6nm以下であり、
前記Ta膜の厚みは、4nmである
磁気抵抗効果素子。 - 請求項1から6のいずれか一項に記載の磁気抵抗効果素子において、
前記磁壁移動層で前記磁壁の移動を起こすために必要な書き込み電流の最小値は、0.4mAである
磁気抵抗効果素子。 - 請求項2に記載の磁気抵抗効果素子において、
前記第1積層膜に接する前記Pt膜の(111)配向の度合いは、前記第1積層膜が垂直磁気異方性を保ち得る配向度より大きく、100%より小さい
磁気抵抗効果素子。 - 請求項2または8に記載の磁気抵抗効果素子において、
前記第1積層膜に接する前記Pt膜は、長周期構造を有する
磁気抵抗効果素子。 - 請求項1から9のいずれか一項に記載の磁気抵抗効果素子を磁気メモリセルとして用いた磁気ランダムアクセスメモリ。
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JP2011547488A JP5664556B2 (ja) | 2009-12-24 | 2010-12-14 | 磁気抵抗効果素子及びそれを用いた磁気ランダムアクセスメモリ |
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WO2010087389A1 (ja) * | 2009-01-30 | 2010-08-05 | 日本電気株式会社 | 磁気メモリ素子、磁気メモリ |
KR20130017267A (ko) * | 2011-08-10 | 2013-02-20 | 에스케이하이닉스 주식회사 | 반도체 장치 및 그 제조 방법 |
JP6824504B2 (ja) | 2015-03-06 | 2021-02-03 | 株式会社BlueSpin | 磁気メモリ、磁気メモリへのデータ書き込み方法及び半導体装置 |
JP2016194964A (ja) * | 2015-04-01 | 2016-11-17 | 株式会社BlueSpin | 磁気メモリ及びその動作方法 |
CN108666339B (zh) * | 2017-03-28 | 2020-11-13 | 中芯国际集成电路制造(上海)有限公司 | 磁性随机存储器及其存储单元的制造方法 |
US10056126B1 (en) | 2017-10-27 | 2018-08-21 | Honeywell International Inc. | Magnetic tunnel junction based memory device |
US10910435B2 (en) | 2019-03-27 | 2021-02-02 | International Business Machines Corporation | Stackable symmetrical operation memory bit cell structure with bidirectional selectors |
JP7419729B2 (ja) * | 2019-10-01 | 2024-01-23 | Tdk株式会社 | 磁壁移動素子及び磁気記録アレイ |
WO2022070378A1 (ja) * | 2020-10-01 | 2022-04-07 | Tdk株式会社 | 磁壁移動素子および磁気アレイ |
EP4156275A1 (en) | 2021-09-22 | 2023-03-29 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. | 1-bit 3-terminal racetrack array with integrated magnetic tunnel junction (mtj) |
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US20130175645A1 (en) | 2013-07-11 |
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