JP5663744B2 - 弾性波素子と、これを用いた電子機器 - Google Patents
弾性波素子と、これを用いた電子機器 Download PDFInfo
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- JP5663744B2 JP5663744B2 JP2012167961A JP2012167961A JP5663744B2 JP 5663744 B2 JP5663744 B2 JP 5663744B2 JP 2012167961 A JP2012167961 A JP 2012167961A JP 2012167961 A JP2012167961 A JP 2012167961A JP 5663744 B2 JP5663744 B2 JP 5663744B2
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- Prior art keywords
- dielectric layer
- idt electrode
- acoustic wave
- electrode
- piezoelectric body
- Prior art date
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- 230000001902 propagating effect Effects 0.000 claims description 6
- 230000000644 propagated effect Effects 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 description 18
- 230000008878 coupling Effects 0.000 description 13
- 238000010168 coupling process Methods 0.000 description 13
- 238000005859 coupling reaction Methods 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 244000126211 Hericium coralloides Species 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- UKDIAJWKFXFVFG-UHFFFAOYSA-N potassium;oxido(dioxo)niobium Chemical compound [K+].[O-][Nb](=O)=O UKDIAJWKFXFVFG-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02842—Means for compensation or elimination of undesirable effects of reflections
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
- H03H3/10—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02834—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/72—Networks using surface acoustic waves
- H03H9/725—Duplexers
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Description
図1と図2はそれぞれ本発明の実施の形態1における弾性波素子6の上面図と断面模式図である。弾性波素子6は、例えば、CDMA標準規格のBand1用のアンテナ共用器であり、フィルタ7、8を備える。フィルタ7は、2110MHz〜2170MHzの受信の周波数帯域の信号を通過させる受信フィルタである。フィルタ8は、受信の周波数帯域より低い1920MHz〜1980MHzの送信の周波数帯域の信号を通過させる送信フィルタである。
図8と図9はそれぞれ実施の形態2における弾性波素子1004の上面図と断面模式図である。図8と図9において、図1と図2に示す弾性波素子6と同じ部分には同じ参照番号を付す。
8 フィルタ(第2のフィルタ)
9 圧電体
10 IDT電極(第1のIDT電極)
11 IDT電極(第2のIDT電極)
12 誘電体層(第1の誘電体層)
16 凸部(第1の凸部)
17 凸部(第2の凸部)
18 誘電体層(第2の誘電体層)
19A 直列共振器
20 並列共振器
51 外部端子(第1の外部端子)
52 外部端子(第2の外部端子)
110B 電極指(第1の電極指)
111B 電極指(第2の電極指)
Claims (2)
- 上面を有する圧電体と、
前記圧電体の前記上面上に設けられた第1のインターディジタルトランスデューサ(IDT)電極と、
前記圧電体の前記上面上に設けられた第2のIDT電極と、
前記圧電体の前記上面上に設けられて、かつ前記第1のIDT電極と第2のIDT電極とを覆う第1の誘電体層と、
を備え、
前記第1のIDT電極の真上方における前記第1の誘電体層の第1の部分の上面の前記圧電体の前記上面からの高さより、前記第2のIDT電極の真上方における前記第1の誘電体層の第2の部分の上面の前記圧電体の前記上面からの高さが高く、
前記第1の誘電体層の上面上に設けられて、前記第1の誘電体層を伝搬する横波の速度よりも速い横波が伝搬する第2の誘電体層と、
前記第2の誘電体層の上面に設けられて、前記第1のIDT電極と電気的に接続された第1の外部端子と、
前記第2の誘電体層の上面に設けられて、前記第2のIDT電極と電気的に接続された第2の外部端子と、
をさらに備え、
前記第1のIDT電極の上方における前記第2の誘電体層の上面の高さと前記第2のIDT電極の上方における前記第2の誘電体層の上面の高さの差は、前記第1のIDT電極の上方における前記第1の誘電体層の上面の高さと前記第2のIDT電極の上方における前記第1の誘電体層の上面の高さの差より小さい、弾性波素子。 - 請求項1に記載の弾性波素子と、
前記弾性波素子に接続された電子部品と、
を備えた電子機器。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012167961A JP5663744B2 (ja) | 2009-04-22 | 2012-07-30 | 弾性波素子と、これを用いた電子機器 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009103572 | 2009-04-22 | ||
JP2009103572 | 2009-04-22 | ||
JP2012167961A JP5663744B2 (ja) | 2009-04-22 | 2012-07-30 | 弾性波素子と、これを用いた電子機器 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011510190A Division JP5093403B2 (ja) | 2009-04-22 | 2010-04-19 | 弾性波素子と、これを用いた電子機器 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012209980A JP2012209980A (ja) | 2012-10-25 |
JP5663744B2 true JP5663744B2 (ja) | 2015-02-04 |
Family
ID=43010894
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Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011510190A Active JP5093403B2 (ja) | 2009-04-22 | 2010-04-19 | 弾性波素子と、これを用いた電子機器 |
JP2012167961A Active JP5663744B2 (ja) | 2009-04-22 | 2012-07-30 | 弾性波素子と、これを用いた電子機器 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011510190A Active JP5093403B2 (ja) | 2009-04-22 | 2010-04-19 | 弾性波素子と、これを用いた電子機器 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8564172B2 (ja) |
JP (2) | JP5093403B2 (ja) |
CN (2) | CN102396154B (ja) |
HK (1) | HK1207484A1 (ja) |
WO (1) | WO2010122767A1 (ja) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130026881A1 (en) * | 2010-06-17 | 2013-01-31 | Shoji Okamoto | Acoustic wave element |
CN103329437B (zh) * | 2011-01-18 | 2016-03-16 | 株式会社村田制作所 | 弹性表面波滤波器装置 |
JP5182459B2 (ja) | 2011-06-23 | 2013-04-17 | パナソニック株式会社 | ラダー型弾性波フィルタ及びこれを用いたアンテナ共用器 |
JP5797979B2 (ja) * | 2011-08-31 | 2015-10-21 | 太陽誘電株式会社 | 弾性波デバイス |
US20140142584A1 (en) * | 2012-11-16 | 2014-05-22 | Spinal Generations, Llc | Multichannel cannula and methods for using same |
JP5891198B2 (ja) * | 2013-04-12 | 2016-03-22 | スカイワークス・パナソニック フィルターソリューションズ ジャパン株式会社 | アンテナ共用器およびこれを用いた電子機器 |
JP5797356B2 (ja) * | 2013-09-26 | 2015-10-21 | 京セラ株式会社 | 弾性波装置および弾性波モジュール |
US9634644B2 (en) | 2014-07-28 | 2017-04-25 | Skyworks Filter Solutions Japan Co., Ltd. | Acoustic wave elements and antenna duplexers, and modules and electronic devices using same |
WO2016017129A1 (en) | 2014-07-28 | 2016-02-04 | Skyworks Panasonic Filter Solutions Japan Co., Ltd. | Acoustic wave elements, antenna duplexers, modules and electronic devices using the same |
DE102014118897B4 (de) * | 2014-12-17 | 2019-02-21 | Snaptrack, Inc. | Wandler für SAW mit unterdrückter Modenkonversion |
CN107112968B (zh) * | 2015-01-22 | 2020-10-16 | 株式会社村田制作所 | 弹性波装置的制造方法以及弹性波装置 |
WO2017187768A1 (ja) * | 2016-04-25 | 2017-11-02 | 株式会社村田製作所 | 弾性波装置及びその製造方法 |
JP6784073B2 (ja) * | 2016-06-21 | 2020-11-11 | 株式会社村田製作所 | 弾性表面波フィルタ |
WO2018003657A1 (ja) * | 2016-06-28 | 2018-01-04 | 株式会社村田製作所 | 弾性波装置 |
JP6788024B2 (ja) * | 2016-10-11 | 2020-11-18 | 京セラ株式会社 | 弾性波装置 |
CN110089030B (zh) * | 2016-12-20 | 2023-01-06 | 株式会社村田制作所 | 弹性波装置、高频前端电路以及通信装置 |
JP2018182354A (ja) * | 2017-04-03 | 2018-11-15 | 株式会社村田製作所 | 弾性波装置 |
KR102372785B1 (ko) * | 2017-09-05 | 2022-03-08 | 가부시키가이샤 무라타 세이사쿠쇼 | 필터 장치 및 필터 장치의 제조 방법 |
JP6950751B2 (ja) * | 2018-01-12 | 2021-10-13 | 株式会社村田製作所 | 弾性波装置、マルチプレクサ、高周波フロントエンド回路、及び通信装置 |
JP2021078013A (ja) * | 2019-11-09 | 2021-05-20 | 株式会社弾性波デバイスラボ | 弾性波素子およびその製造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
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CA2038474C (en) * | 1990-03-19 | 1994-09-20 | Yoshio Satoh | Surface-acoustic-waver filter having a plurality of electrodes |
JPH06152299A (ja) * | 1992-11-09 | 1994-05-31 | Fujitsu Ltd | 弾性表面波デバイス |
EP0936734A4 (en) * | 1997-07-28 | 2000-10-25 | Toshiba Kk | SURFACE ACOUSTIC WAVE PROCESSING DEVICE AND MANUFACTURING METHOD THEREOF |
JP2000196409A (ja) * | 1998-12-28 | 2000-07-14 | Kyocera Corp | 弾性表面波フィルタ |
JP3317274B2 (ja) * | 1999-05-26 | 2002-08-26 | 株式会社村田製作所 | 弾性表面波装置及び弾性表面波装置の製造方法 |
JP3419402B2 (ja) * | 2001-04-16 | 2003-06-23 | 株式会社村田製作所 | 弾性表面波装置、通信装置 |
US7327205B2 (en) * | 2004-03-12 | 2008-02-05 | Murata Manufacturing Co., Ltd. | Demultiplexer and surface acoustic wave filter |
WO2006003933A1 (ja) * | 2004-06-30 | 2006-01-12 | Matsushita Electric Industrial Co., Ltd. | 電子部品およびその製造方法 |
DE102004037819B4 (de) | 2004-08-04 | 2021-12-16 | Snaptrack, Inc. | Elektroakustisches Bauelement mit geringen Verlusten |
-
2010
- 2010-04-19 US US13/260,798 patent/US8564172B2/en active Active
- 2010-04-19 CN CN201080016666.6A patent/CN102396154B/zh active Active
- 2010-04-19 JP JP2011510190A patent/JP5093403B2/ja active Active
- 2010-04-19 CN CN201510012562.2A patent/CN104734662B/zh active Active
- 2010-04-19 WO PCT/JP2010/002817 patent/WO2010122767A1/ja active Application Filing
-
2012
- 2012-07-30 JP JP2012167961A patent/JP5663744B2/ja active Active
-
2015
- 2015-08-18 HK HK15107944.5A patent/HK1207484A1/xx unknown
Also Published As
Publication number | Publication date |
---|---|
CN104734662A (zh) | 2015-06-24 |
JP5093403B2 (ja) | 2012-12-12 |
CN102396154A (zh) | 2012-03-28 |
CN104734662B (zh) | 2017-09-22 |
CN102396154B (zh) | 2015-02-04 |
JP2012209980A (ja) | 2012-10-25 |
JPWO2010122767A1 (ja) | 2012-10-25 |
WO2010122767A1 (ja) | 2010-10-28 |
HK1207484A1 (en) | 2016-01-29 |
US20120019102A1 (en) | 2012-01-26 |
US8564172B2 (en) | 2013-10-22 |
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