JP5647365B2 - 低エネルギーイオンミリング又は堆積 - Google Patents
低エネルギーイオンミリング又は堆積 Download PDFInfo
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- JP5647365B2 JP5647365B2 JP2014075878A JP2014075878A JP5647365B2 JP 5647365 B2 JP5647365 B2 JP 5647365B2 JP 2014075878 A JP2014075878 A JP 2014075878A JP 2014075878 A JP2014075878 A JP 2014075878A JP 5647365 B2 JP5647365 B2 JP 5647365B2
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- 230000008021 deposition Effects 0.000 title description 10
- 238000000992 sputter etching Methods 0.000 title 1
- 239000007789 gas Substances 0.000 claims description 63
- 150000002500 ions Chemical group 0.000 claims description 41
- 239000002245 particle Substances 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 24
- 238000010884 ion-beam technique Methods 0.000 claims description 18
- 238000002347 injection Methods 0.000 claims description 17
- 239000007924 injection Substances 0.000 claims description 17
- 238000000151 deposition Methods 0.000 claims description 11
- 238000010894 electron beam technology Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 239000000523 sample Substances 0.000 description 70
- 238000003801 milling Methods 0.000 description 13
- 230000005684 electric field Effects 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- CUJRVFIICFDLGR-UHFFFAOYSA-N acetylacetonate Chemical compound CC(=O)[CH-]C(C)=O CUJRVFIICFDLGR-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/286—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/32—Polishing; Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3178—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for applying thin layers on objects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/004—Charge control of objects or beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31732—Depositing thin layers on selected microareas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3174—Etching microareas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3174—Etching microareas
- H01J2237/31742—Etching microareas for repairing masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3174—Etching microareas
- H01J2237/31745—Etching microareas for preparing specimen to be viewed in microscopes or analyzed in microanalysers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31749—Focused ion beam
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Biochemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Health & Medical Sciences (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Sampling And Sample Adjustment (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Description
− 前記試料位置に試料を供する段階;
− 前記試料チャンバを排気する段階;及び、
− 気体注入システムから放出される気体の噴流を前記試料へ導く段階;
を有する。
201 金属キャピラリ
202 面
203 内部ボア
206 荷電粒子ビーム
207 気体噴流
208 電源
300 試料
301 キャピラリ
302 面
303 内部ボア
304 長方形
305 表面
306 線
307 イオン
308 電源
Claims (11)
- 排気可能な試料チャンバ上に設けられる荷電粒子ビームを生成する鏡筒と、前記試料チャンバ内に設けられる試料位置とを備える荷電粒子装置を用いて試料から材料を除去する方法又は試料上に材料を堆積する方法であって:
− 前記試料位置に試料を供する段階;
− 前記試料チャンバを排気する段階;及び、
− 気体注入システムから放出される気体の噴流を前記試料へ導く段階;
を有し、
当該荷電粒子装置が、前記試料に対してバイアス印加される電極を備え、
前記電極は前記気体の噴流の少なくとも一部にわたって電位を誘起し、かつ、
荷電粒子ビームは、前記気体注入システムと前記試料との間の気体の噴流又は前記気体注入システムへ導かれ、
その結果、前記荷電粒子ビームは、前記試料へ向けて加速される2次イオンを直接的又は間接的に生成する、
ことを特徴とする方法。 - 前記気体注入システムは前記気体が放出されるキャピラリを備え、
前記キャピラリは前記電極である、
請求項1に記載の方法。 - 前記荷電粒子ビームが電子ビームである、請求項1又は2に記載の方法。
- 前記ビームが前記キャピラリに衝突することで後方散乱電子を生成し、
前記後方散乱電子は、気体をイオン化することで、2次イオンを生成する、
請求項3に記載の方法。 - 当該荷電粒子装置が前記試料を薄くするためのイオンビームを生成するイオンビーム鏡筒を有する、請求項1乃至4のうちのいずれか一項に記載の方法であって、
前記試料を前記2次イオンによって薄くする前に、前記イオンビーム鏡筒によって生成される前記イオンビームによって前記試料を薄くする工程を有する、方法。 - 前記気体が希ガスを含む、請求項1乃至5のうちのいずれか一項に記載の方法。
- 前記気体が酸素又は水素を含む、請求項1乃至5のうちのいずれか一項に記載の方法。
- 前記気体注入システムは、2種類以上の気体間での切り換えを行うことで、時間変化する組成を有する気体噴流を生成することができるように構成される、請求項1乃至7のうちのいずれか一項に記載の方法。
- 前記電極と前記試料との間での電圧が500V未満である、請求項1乃至8のうちのいずれか一項に記載の方法。
- 前記気体注入システムと前記試料との間の距離が1mm未満である、請求項1乃至9のうちのいずれか一項に記載の方法。
- 前記荷電粒子ビームが、2次イオンが生成される前記容積を画定するように走査される、請求項1乃至10のうちのいずれか一項に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP13162084.1A EP2787523B1 (en) | 2013-04-03 | 2013-04-03 | Low energy ion milling or deposition |
EP13162084.1 | 2013-04-03 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014203827A JP2014203827A (ja) | 2014-10-27 |
JP5647365B2 true JP5647365B2 (ja) | 2014-12-24 |
Family
ID=48143062
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014075878A Active JP5647365B2 (ja) | 2013-04-03 | 2014-04-02 | 低エネルギーイオンミリング又は堆積 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9206504B2 (ja) |
EP (1) | EP2787523B1 (ja) |
JP (1) | JP5647365B2 (ja) |
CN (1) | CN104103480B (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9978586B2 (en) * | 2015-11-06 | 2018-05-22 | Fei Company | Method of material deposition |
EP3249676B1 (en) | 2016-05-27 | 2018-10-03 | FEI Company | Dual-beam charged-particle microscope with in situ deposition functionality |
CN107262906A (zh) * | 2017-06-12 | 2017-10-20 | 天津商业大学 | 一种微型车床 |
DE102018202428B3 (de) * | 2018-02-16 | 2019-05-09 | Carl Zeiss Microscopy Gmbh | Vielstrahl-Teilchenmikroskop |
JP7237308B2 (ja) * | 2019-05-10 | 2023-03-13 | 日本製鉄株式会社 | 試料解析方法 |
JP7339818B2 (ja) * | 2019-09-03 | 2023-09-06 | キオクシア株式会社 | 荷電粒子ビーム装置 |
US11355305B2 (en) * | 2019-10-08 | 2022-06-07 | Fei Company | Low keV ion beam image restoration by machine learning for object localization |
Citations (4)
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JPH09257670A (ja) * | 1996-03-19 | 1997-10-03 | Hitachi Ltd | 電子顕微鏡用試料作製装置 |
JP2004179165A (ja) * | 2002-11-26 | 2004-06-24 | Fei Co | ターゲット修復用のイオンビーム |
JP2008098232A (ja) * | 2006-10-06 | 2008-04-24 | Jeol Ltd | 集束イオンビーム用ガス導入装置 |
JP2011243997A (ja) * | 2011-07-20 | 2011-12-01 | Hitachi High-Technologies Corp | 荷電粒子線装置 |
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US5851413A (en) * | 1996-06-19 | 1998-12-22 | Micrion Corporation | Gas delivery systems for particle beam processing |
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EP2402475A1 (en) | 2010-06-30 | 2012-01-04 | Fei Company | Beam-induced deposition at cryogenic temperatures |
US9090973B2 (en) | 2011-01-31 | 2015-07-28 | Fei Company | Beam-induced deposition of low-resistivity material |
US9255339B2 (en) | 2011-09-19 | 2016-02-09 | Fei Company | Localized, in-vacuum modification of small structures |
US9443697B2 (en) | 2012-01-31 | 2016-09-13 | Fei Company | Low energy ion beam etch |
-
2013
- 2013-04-03 EP EP13162084.1A patent/EP2787523B1/en active Active
-
2014
- 2014-04-02 US US14/243,583 patent/US9206504B2/en active Active
- 2014-04-02 JP JP2014075878A patent/JP5647365B2/ja active Active
- 2014-04-03 CN CN201410132480.7A patent/CN104103480B/zh active Active
Patent Citations (4)
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JPH09257670A (ja) * | 1996-03-19 | 1997-10-03 | Hitachi Ltd | 電子顕微鏡用試料作製装置 |
JP2004179165A (ja) * | 2002-11-26 | 2004-06-24 | Fei Co | ターゲット修復用のイオンビーム |
JP2008098232A (ja) * | 2006-10-06 | 2008-04-24 | Jeol Ltd | 集束イオンビーム用ガス導入装置 |
JP2011243997A (ja) * | 2011-07-20 | 2011-12-01 | Hitachi High-Technologies Corp | 荷電粒子線装置 |
Also Published As
Publication number | Publication date |
---|---|
US9206504B2 (en) | 2015-12-08 |
CN104103480B (zh) | 2017-03-01 |
EP2787523B1 (en) | 2016-02-10 |
JP2014203827A (ja) | 2014-10-27 |
EP2787523A1 (en) | 2014-10-08 |
CN104103480A (zh) | 2014-10-15 |
US20140302252A1 (en) | 2014-10-09 |
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