JP5637068B2 - 弾性境界波装置の製造方法および弾性境界波装置 - Google Patents
弾性境界波装置の製造方法および弾性境界波装置 Download PDFInfo
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- JP5637068B2 JP5637068B2 JP2011116117A JP2011116117A JP5637068B2 JP 5637068 B2 JP5637068 B2 JP 5637068B2 JP 2011116117 A JP2011116117 A JP 2011116117A JP 2011116117 A JP2011116117 A JP 2011116117A JP 5637068 B2 JP5637068 B2 JP 5637068B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 238000005468 ion implantation Methods 0.000 claims description 74
- 150000002500 ions Chemical class 0.000 claims description 51
- 238000000034 method Methods 0.000 claims description 17
- 239000003989 dielectric material Substances 0.000 claims description 12
- 238000010897 surface acoustic wave method Methods 0.000 claims description 12
- 238000002513 implantation Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- 238000002347 injection Methods 0.000 claims description 4
- 239000007924 injection Substances 0.000 claims description 4
- 239000010408 film Substances 0.000 description 52
- 229910004298 SiO 2 Inorganic materials 0.000 description 19
- 238000006073 displacement reaction Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 229910010413 TiO 2 Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- 229910016570 AlCu Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 238000002407 reforming Methods 0.000 description 4
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 3
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- 229910001416 lithium ion Inorganic materials 0.000 description 3
- 229910001120 nichrome Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 101100256584 Dictyostelium discoideum selk gene Proteins 0.000 description 1
- -1 LiTaO 3 Inorganic materials 0.000 description 1
- 101150098459 SELENOK gene Proteins 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000015271 coagulation Effects 0.000 description 1
- 238000005345 coagulation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/04—Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
- H03H3/10—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/0222—Details of interface-acoustic, boundary, pseudo-acoustic or Stonely wave devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Description
媒質上に積層されており、誘電体よりなる第2の媒質と、前記第1の媒質と第2の媒質と
の界面に配置されたIDT電極とを備える積層体を用意する工程と、前記第2の媒質の外
側からイオンや原子を前記第1の媒質及び/または第2の媒質内部に注入し、内部にイオンもしくは原子注入領域を形成することにより、周波数を調整する工程とを備える。
層されており、誘電体よりなる第2の媒質と、前記第1の媒質と前記第2の媒質との界面
に配置されたIDT電極とを備え、前記第1の媒質および/または前記第2の媒質が、内部にイオンもしくは原子注入領域を有する、弾性境界波装置である。
2…IDT電極
2a…Ti膜
2b…Pt膜
2c…TiO2膜
2d…AlCu膜
2e…TiO2膜
2f…Pt膜
2g…NiCr膜
3…SiO2膜
4…SiN膜
5…領域
11…第2の媒質
12…積層体
13…第3の媒質
Claims (6)
- 圧電体よりなる第1の媒質と、前記第1の媒質上に積層されており、誘電体よりなる第2の媒質と、前記第1の媒質と第2の媒質との界面に配置されたIDT電極とを備える積層体を用意する工程と、
前記第2の媒質の外側からイオンもしくは原子を前記第1の媒質及び/または第2の媒質内部に注入し、内部にイオンもしくは原子注入領域を形成することにより、周波数を調整する工程とを備え、弾性境界波の波長をλとしたときに、前記界面の上下1λ以内の領域にイオンもしくは原子を分布させる、弾性境界波装置の製造方法。 - 前記イオン注入に際し、Li以上の原子量を有する原子のイオンを注入する、請求項1に記載の弾性境界波装置の製造方法。
- 前記積層体を用意する工程において、前記第2の媒質の厚みを、IDT電極により励振される弾性波が弾性境界波ではなく、弾性表面波を主体とする厚みとなるように第2の媒質を形成し、
前記イオン注入工程後に、第2の媒質上に、さらに第2の媒質と同じ誘電体材料または異なる誘電体材料からなる第3の媒質を、IDT電極に励振される弾性波が弾性境界波を主体とするように形成する工程をさらに備える、請求項1または2に記載の弾性境界波装置の製造方法。 - 圧電体よりなる第1の媒質と、
前記第1の媒質上に積層されており、誘電体よりなる第2の媒質と、
前記第1の媒質と前記第2の媒質との界面に配置されたIDT電極とを備え、
前記第1の媒質および/または前記第2の媒質が、内部にイオンもしくは原子注入領域を有し、弾性境界波の波長をλとしたときに、前記界面の上下1λ以内の領域が前記イオンもしくは原子注入領域である、弾性境界波装置。 - 前記イオンが、Li以上の原子量を有する原子のイオンである、請求項4に記載の弾性境界波装置。
- 前記第2の媒質の厚みが、IDT電極により励振される弾性波が弾性境界波ではなく弾性表面波を主体とする厚みとされており、
前記第2の媒質上に積層されており、前記第2の媒質と同じ誘電体材料または異なる誘電体材料からなる第3の媒質をさらに備え、IDT電極により励振される弾性波が弾性境界波を主体とするように前記第3の媒質が形成されている、請求項4または5に記載の弾性境界波装置。
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JP2011116117A JP5637068B2 (ja) | 2010-08-27 | 2011-05-24 | 弾性境界波装置の製造方法および弾性境界波装置 |
US13/215,309 US8569926B2 (en) | 2010-08-27 | 2011-08-23 | Manufacturing method for boundary acoustic wave device and boundary acoustic wave device |
US14/036,246 US9466782B2 (en) | 2010-08-27 | 2013-09-25 | Method for manufacturing boundary acoustic wave device |
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JP2010190900 | 2010-08-27 | ||
JP2010190900 | 2010-08-27 | ||
JP2011116117A JP5637068B2 (ja) | 2010-08-27 | 2011-05-24 | 弾性境界波装置の製造方法および弾性境界波装置 |
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JP2012070355A JP2012070355A (ja) | 2012-04-05 |
JP5637068B2 true JP5637068B2 (ja) | 2014-12-10 |
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JP4826633B2 (ja) * | 2006-11-24 | 2011-11-30 | 株式会社村田製作所 | 弾性境界波装置の製造方法及び弾性境界波装置 |
JP5637068B2 (ja) * | 2010-08-27 | 2014-12-10 | 株式会社村田製作所 | 弾性境界波装置の製造方法および弾性境界波装置 |
US9151153B2 (en) * | 2011-11-30 | 2015-10-06 | Baker Hughes Incorporated | Crystal sensor made by ion implantation for sensing a property of interest within a borehole in the earth |
FR3004289B1 (fr) * | 2013-04-08 | 2015-05-15 | Soitec Silicon On Insulator | Composant a ondes acoustiques de surface et sa methode de fabrication |
EP3007357B1 (en) * | 2013-05-27 | 2019-05-01 | Murata Manufacturing Co., Ltd. | Surface acoustic wave device |
EP3772749A1 (en) * | 2019-08-08 | 2021-02-10 | Infineon Technologies Dresden GmbH & Co . KG | Methods and devices related to radio frequency devices |
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JPS63169806A (ja) * | 1987-01-08 | 1988-07-13 | Murata Mfg Co Ltd | 表面波素子 |
FR2714200B1 (fr) * | 1993-11-25 | 1996-12-27 | Fujitsu Ltd | Dispositif à onde acoustique de surface et son procédé de fabrication. |
JPH07202631A (ja) * | 1993-11-25 | 1995-08-04 | Fujitsu Ltd | 弾性表面波装置及びその製造方法 |
JP3411124B2 (ja) * | 1994-05-13 | 2003-05-26 | 松下電器産業株式会社 | 弾性表面波モジュール素子の製造方法 |
CN1788415B (zh) * | 2004-01-19 | 2012-09-12 | 株式会社村田制作所 | 边界声波装置 |
CN1938946A (zh) * | 2004-03-29 | 2007-03-28 | 株式会社村田制作所 | 声界面波装置的制造方法以及声界面波装置 |
JP4692629B2 (ja) * | 2006-05-30 | 2011-06-01 | 株式会社村田製作所 | 弾性波装置 |
JP4826633B2 (ja) * | 2006-11-24 | 2011-11-30 | 株式会社村田製作所 | 弾性境界波装置の製造方法及び弾性境界波装置 |
JP4811516B2 (ja) * | 2007-03-06 | 2011-11-09 | 株式会社村田製作所 | 弾性境界波装置 |
WO2010079575A1 (ja) * | 2009-01-07 | 2010-07-15 | 株式会社村田製作所 | 弾性境界波装置 |
WO2010116783A1 (ja) * | 2009-03-30 | 2010-10-14 | 株式会社村田製作所 | 弾性波装置 |
WO2011018913A1 (ja) * | 2009-08-10 | 2011-02-17 | 株式会社村田製作所 | 弾性境界波装置 |
JP5637068B2 (ja) * | 2010-08-27 | 2014-12-10 | 株式会社村田製作所 | 弾性境界波装置の製造方法および弾性境界波装置 |
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US20140030442A1 (en) | 2014-01-30 |
US8569926B2 (en) | 2013-10-29 |
US20120049691A1 (en) | 2012-03-01 |
JP2012070355A (ja) | 2012-04-05 |
US9466782B2 (en) | 2016-10-11 |
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