JP5636122B1 - 半導体構造およびその製造方法 - Google Patents
半導体構造およびその製造方法 Download PDFInfo
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- JP5636122B1 JP5636122B1 JP2014005796A JP2014005796A JP5636122B1 JP 5636122 B1 JP5636122 B1 JP 5636122B1 JP 2014005796 A JP2014005796 A JP 2014005796A JP 2014005796 A JP2014005796 A JP 2014005796A JP 5636122 B1 JP5636122 B1 JP 5636122B1
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- semiconductor structure
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 97
- 238000004519 manufacturing process Methods 0.000 title abstract description 13
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 133
- 239000000956 alloy Substances 0.000 claims abstract description 133
- 229910052751 metal Inorganic materials 0.000 claims abstract description 74
- 239000002184 metal Substances 0.000 claims abstract description 74
- 239000002245 particle Substances 0.000 claims abstract description 64
- 238000009826 distribution Methods 0.000 claims abstract description 14
- 239000006104 solid solution Substances 0.000 claims abstract description 14
- 238000009713 electroplating Methods 0.000 claims description 56
- 229910052737 gold Inorganic materials 0.000 claims description 43
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 37
- 229910052709 silver Inorganic materials 0.000 claims description 34
- 239000004020 conductor Substances 0.000 claims description 32
- 229910052763 palladium Inorganic materials 0.000 claims description 19
- 239000011521 glass Substances 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 18
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 238000007747 plating Methods 0.000 claims description 7
- 239000010953 base metal Substances 0.000 claims description 6
- 229910020836 Sn-Ag Inorganic materials 0.000 claims description 2
- 229910020988 Sn—Ag Inorganic materials 0.000 claims description 2
- 229910002065 alloy metal Inorganic materials 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 186
- 229910001316 Ag alloy Inorganic materials 0.000 description 122
- 239000010931 gold Substances 0.000 description 53
- 239000010408 film Substances 0.000 description 35
- 239000004332 silver Substances 0.000 description 31
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 30
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 27
- 229910000679 solder Inorganic materials 0.000 description 21
- 238000000034 method Methods 0.000 description 17
- -1 for example Chemical compound 0.000 description 15
- 238000012360 testing method Methods 0.000 description 13
- 238000007772 electroless plating Methods 0.000 description 12
- 238000005259 measurement Methods 0.000 description 12
- 239000010949 copper Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 11
- 239000000243 solution Substances 0.000 description 11
- 239000006185 dispersion Substances 0.000 description 10
- 229910002056 binary alloy Inorganic materials 0.000 description 8
- 150000003839 salts Chemical class 0.000 description 8
- 229910002058 ternary alloy Inorganic materials 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 238000004626 scanning electron microscopy Methods 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 238000000137 annealing Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 238000004627 transmission electron microscopy Methods 0.000 description 5
- 229910017750 AgSn Inorganic materials 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910000765 intermetallic Inorganic materials 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 3
- 229910002695 AgAu Inorganic materials 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 2
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 2
- 229910007116 SnPb Inorganic materials 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000008393 encapsulating agent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000010587 phase diagram Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001803 electron scattering Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000003353 gold alloy Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 230000000877 morphologic effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- MUJIDPITZJWBSW-UHFFFAOYSA-N palladium(2+) Chemical compound [Pd+2] MUJIDPITZJWBSW-UHFFFAOYSA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 238000004073 vulcanization Methods 0.000 description 1
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- H01L21/4825—Connection or disconnection of other leads to or from flat leads, e.g. wires, bumps, other flat leads
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Abstract
Description
本開示を記載し、特許請求の範囲を作成する上で、下記に述べられた定義にしたがって、以下の用語法が使用される。
KAg(CN)2 → K+ + Ag+ + 2CN-
KAu(CN)2 → K+ + Au+ + 2CN-
K2Pd(CN)4 → 2K+ + Pd2+ + 4CN-
2H2O → 4H+ + O2(g) + 4e-
であり得る。
30,50 チップオンフィルム(COF)半導体構造
40 多層バンプ構造
60,70,80 チップオンガラス(COG)半導体構造
100 デバイス
101 銀合金バンプ体
102 導体パッド
103 パッシベーション層
104 バンプ下地金属(UBM)層
105 シード層
111 アノード
112 カソード
113 電気メッキ浴
115 無電界メッキ浴
301 フレキシブルフィルム
302 導電層
304 封止剤
306,308 はんだ層
401 ガラス基板
Claims (25)
- 半導体構造において、
デバイス、
前記デバイス上の導体パッド、
前記導体パッド上のAg1-xYx合金バンプ、および
前記導体パッドと前記Ag1-xYx合金バンプとの間の、Agを含むシード層、
を含み、
前記Ag1-xYx合金バンプのYは、任意の質量百分率でAgと完全な固溶体を形成する金属を含み、
前記Ag1-xYx合金バンプのXは、0.005から0.25の範囲にある、半導体構造。 - 前記YがAuおよびPdの少なくとも一方を含む、請求項1記載の半導体構造。
- 前記Ag1-xYx合金バンプの粒径分布の1標準偏差と平均値との間の差が、0.2μmから0.4μmの範囲にある、請求項1記載の半導体構造。
- 前記Ag1-xYx合金バンプの高さが9μmから15μmの範囲にある、請求項1記載の半導体構造。
- 前記導体パッドと前記Ag1-xYx合金バンプとの間にバンプ下地金属(UBM)層をさらに含み、該UBM層がTi、TiW、およびAgの内の少なくとも1つを含む、請求項1記載の半導体構造。
- 前記UBM層の厚さが1000Åから3000Åの範囲にある、請求項5記載の半導体構造。
- 前記シード層の厚さが1000Åから3000Åの範囲にある、請求項1記載の半導体構造。
- 半導体構造において、
デバイス、
前記デバイス上の導体パッド、
前記導体パッド上の電気メッキAg1-xYx合金バンプ、
前記Ag1-xYx合金バンプ上の金属層、および
前記導体パッドと前記Ag1-xYx合金バンプとの間の、Agを含むシード層、
を含み、
前記Ag1-xYx合金バンプのYは、任意の質量百分率でAgと完全な固溶体を形成する金属を含み、
前記Ag1-xYx合金バンプのXは、0.005から0.25の範囲にあり、
前記金属層は、AuおよびCuの少なくとも一方を含む、半導体構造。 - 前記YがAuおよびPdの少なくとも一方を含む、請求項8記載の半導体構造。
- 前記電気メッキAg1-xYx合金バンプの粒径分布の1標準偏差と平均値との間の差が、0.2μmから0.4μmの範囲にある、請求項8記載の半導体構造。
- 前記電気メッキAg1-xYx合金バンプの高さが9μmから15μmの範囲にある、請求項8記載の半導体構造。
- 前記導体パッドと前記電気メッキAg1-xYx合金バンプとの間にバンプ下地金属(UBM)層をさらに含み、該UBM層がTi、TiW、およびAgの内の少なくとも1つを含む、請求項8記載の半導体構造。
- 前記金属層が前記電気メッキAg1-xYx合金バンプ上に位置し、該電気メッキAg1-xYx合金バンプの側壁を覆う、請求項8記載の半導体構造。
- 前記金属層の高さが1μmから3μmの範囲にある、請求項8記載の半導体構造。
- チップオンフィルム(COF)半導体構造において、
第1の表面と第2の表面を有するフレキシブルフィルム、
前記フレキシブルフィルムの第1の表面上の導電層、
前記導電層上の半導体チップ、
前記半導体チップと前記導電層とを電気的に連結する電気メッキAg1-xYx合金バンプであって、Xは、0.005から0.25の範囲にある、電気メッキAg1-xYx合金バンプ、および
前記導電層と前記電気メッキAg1-xYx合金バンプとの間のSn−Ag合金層、
を含むことを特徴とするCOF半導体構造。 - 前記電気メッキAg1-xYx合金バンプのYが、任意の質量百分率でAgと完全な固溶体を形成する金属を含む、請求項15記載のCOF半導体構造。
- 前記電気メッキAg1-xYx合金バンプのYがPdまたはAgである、請求項16記載のCOF半導体構造。
- 前記電気メッキAg1-xYx合金バンプと前記導電層との間に非銀金属層をさらに含む、請求項15記載のCOF半導体構造。
- 前記非銀金属層が前記電気メッキAg1-xYx合金バンプの側壁を覆う、請求項18記載のCOF半導体構造。
- 縦断面の前記Ag1-xYx合金バンプの平均粒径が0.5μmから1.5μmの範囲にある、請求項15記載のCOF半導体構造。
- チップオンガラス(COG)半導体構造において、
第1の表面と第2の表面を有する透明基板、
前記基板の第1の表面上の透明導電層、
前記導電層上の半導体チップ、および
前記半導体チップと前記導電層とを電気的に連結する電気メッキAg1-xYx合金バンプであって、Xが、0.005から0.25の範囲にある、電気メッキAg1-xYx合金バンプ、および
前記電気メッキAg1-xYx合金バンプの下方の、Agを含むシード層、
を含むことを特徴とするCOG半導体構造。 - 前記電気メッキAg1-xYx合金バンプのYがPdおよびAgの少なくとも一方を含む、請求項21記載のCOG半導体構造。
- 前記電気メッキAg1-xYx合金バンプと前記導電層との間に非銀金属層をさらに含む、請求項21記載のCOG半導体構造。
- 前記非銀金属層が前記電気メッキAg1-xYx合金バンプの側壁を覆う、請求項23記載のCOG半導体構造。
- 縦断面の前記Ag1-xYx合金バンプの平均粒径が0.5μmから1.5μmの範囲にある、請求項21記載のCOG半導体構造。
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US20160308100A1 (en) * | 2015-04-17 | 2016-10-20 | Chipmos Technologies Inc | Semiconductor package and method of manufacturing thereof |
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US10658318B2 (en) * | 2016-11-29 | 2020-05-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Film scheme for bumping |
US10971442B2 (en) | 2018-04-12 | 2021-04-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device having via sidewall adhesion with encapsulant |
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