JP5597885B2 - Lpp、euv光源駆動レーザシステム - Google Patents
Lpp、euv光源駆動レーザシステム Download PDFInfo
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- JP5597885B2 JP5597885B2 JP2008519481A JP2008519481A JP5597885B2 JP 5597885 B2 JP5597885 B2 JP 5597885B2 JP 2008519481 A JP2008519481 A JP 2008519481A JP 2008519481 A JP2008519481 A JP 2008519481A JP 5597885 B2 JP5597885 B2 JP 5597885B2
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/008—X-ray radiation generated from plasma involving a beam of energy, e.g. laser or electron beam in the process of exciting the plasma
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- Optics & Photonics (AREA)
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Description
関連出願
本出願は、2005年8月31日出願の「LPP、EUV光源駆動レーザシステム」という名称の米国特許出願出願番号第11/217、161号に対する優先権を請求するものであり、代理人整理番号第2004−0023−01号である、2004年12月22日出願の「EUV光源光学要素」という名称の米国特許出願出願番号第11/021、261号と、代理人整理番号第2004−0008−01号である、2005年2月25日出願の「EUVプラズマ源ターゲット送出の方法及び装置」という名称の第11/067、124号と、代理人整理番号第2004−0088−01号である、2004年11月1日出願の「EUV集光装置デブリ管理」という名称の第10/979、945号と、代理人整理番号第2004−0064−01号である、2004年11月1日出願の「EUV光源」という名称の第10/979、919号と、代理人整理番号第2003−0125−01号である、2004年3月17日出願の「高繰返し数レーザ生成プラズマEUV光源」という名称の第10/803、526号と、代理人整理番号第2004−0044−01号である、2004年7月27日出願の「EUV光源」という名称の第10/900、839号と、代理人整理番号第2004−0117−01号である、2005年2月25日出願の「EUV光源内部構成要素をプラズマ生成デブリから保護するためのシステム」という名称の第11/067、099号と、代理人整理番号第2004−0107−01号である、2005年2月28日出願の「EUV、LPP駆動レーザ」という名称の第60/657、606号と、代理人整理番号第2004−0086−01号とに関連する2005年6月29日出願の米国特許出願出願番号第11/174、299号の一部継続出願であり、これらの特許の全ての開示内容は、この記載により引用によって組み込まれる。
R≒1−2/√(S*T)
ここで、Sは、金属の導電率(CGSシステムにおいて)、Tは、放射線の発振周期である。銅の場合、この式では、10.6μmに対しては約98.5%の反射率の推定値が得られる。Snの場合、反射率推定値は、96%である。
172 レーザ放射線
176 集束ビーム
180 集束ミラー
Claims (5)
- 5μmより長い波長を有するレーザビームを出力するレーザ装置と、
照射サイトにおいて前記レーザビームと相互作用してEUV光放射プラズマを生成するための材料であって、当該プラズマによって生成されるデブリが錫を含むように、錫が含まれた材料と、
前記材料が前記レーザビームと相互作用するように、前記材料を、液滴、固体粒子、又は液滴内に含まれた固体粒子の形のターゲットとして前記照射サイトに落下により送出するターゲット送出装置と、
前記錫が含まれるデブリにさらされる反射光学部品であって、前記レーザビームを前記照射サイトに向けて反射する反射光学部品と、
前記照射サイトにおいて発生したEUV光を反射して焦点に集光する反射集光装置と、
レーザ入力窓を有する容器と、を含み、
前記照射サイトは前記容器の中にあり、前記反射光学部品は前記容器の内部に配置されており、かつ、前記レーザ入力窓は到達する錫を含む前記デブリが少なくなるように前記反射光学部品と前記照射サイトとを結ぶ軸から離して設けられており、
さらに、前記レーザ入力窓を保護する円錐形状の筐体を有する、
ことを特徴とするEUV光源。 - 前記レーザ装置は、CO2を含む利得媒質を有している請求項1に記載のEUV光源。
- EUV光源であって、
レーザビームを出力するレーザ装置と、
前記レーザビームを反射し、反射したレーザビームを前記EUV光源の軸上の焦点位置に集束するよう配置された反射光学器械と、
前記焦点位置において前記レーザビームと相互作用してEUV光放射プラズマを生成する材料と、
前記材料が前記レーザビームと相互作用するように、前記材料を、液滴、固体粒子、又は液滴内に含まれた固体粒子の形のターゲットとして前記焦点位置に落下により送出するターゲット送出装置と、
レーザ入力窓を有する容器と、ここで、前記レーザ入力窓は、容器外部の前記レーザ装置からの前記レーザビームを前記反射光学器械に入力し、
前記焦点位置において発生したEUV光を反射して前記焦点位置とは異なる焦点に集光する反射集光装置と、
を含み、
前記焦点位置は前記容器の中にあり、前記反射光学器械は前記容器の内部に配置されており、かつ、前記レーザ入力窓は到達するデブリが少なくなるように前記反射集光装置の軸から離して設けられており、さらに前記レーザ入力窓から入力された前記レーザビームは前記反射光学器械によって当該レーザビームの伝播する前記軸上の焦点に集光される、
ことを特徴とするEUV光源。 - 前記レーザ装置は、CO2を含む利得媒質を有している請求項3に記載のEUV光源。
- 前記材料は、錫を含むものである請求項3に記載のEUV光源。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/174,299 US7439530B2 (en) | 2005-06-29 | 2005-06-29 | LPP EUV light source drive laser system |
US11/174,299 | 2005-06-29 | ||
US11/217,161 | 2005-08-31 | ||
US11/217,161 US7482609B2 (en) | 2005-02-28 | 2005-08-31 | LPP EUV light source drive laser system |
PCT/US2006/024960 WO2007005415A2 (en) | 2005-06-29 | 2006-06-27 | Lpp euv light source drive laser system |
Related Child Applications (1)
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JP2014084934A Division JP2014160670A (ja) | 2005-06-29 | 2014-04-16 | Lpp、euv光源駆動レーザシステム |
Publications (3)
Publication Number | Publication Date |
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JP2009500796A JP2009500796A (ja) | 2009-01-08 |
JP2009500796A5 JP2009500796A5 (ja) | 2009-08-13 |
JP5597885B2 true JP5597885B2 (ja) | 2014-10-01 |
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JP2008519481A Active JP5597885B2 (ja) | 2005-06-29 | 2006-06-27 | Lpp、euv光源駆動レーザシステム |
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US7164144B2 (en) * | 2004-03-10 | 2007-01-16 | Cymer Inc. | EUV light source |
US7087914B2 (en) * | 2004-03-17 | 2006-08-08 | Cymer, Inc | High repetition rate laser produced plasma EUV light source |
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FR2871622B1 (fr) * | 2004-06-14 | 2008-09-12 | Commissariat Energie Atomique | Dispositif de generation de lumiere dans l'extreme ultraviolet et application a une source de lithographie par rayonnement dans l'extreme ultraviolet |
JP5100990B2 (ja) * | 2004-10-07 | 2012-12-19 | ギガフォトン株式会社 | 極端紫外光源装置用ドライバーレーザ及びlpp型極端紫外光源装置 |
US7482609B2 (en) * | 2005-02-28 | 2009-01-27 | Cymer, Inc. | LPP EUV light source drive laser system |
US20060222034A1 (en) * | 2005-03-31 | 2006-10-05 | Cymer, Inc. | 6 Khz and above gas discharge laser system |
US7705331B1 (en) * | 2006-06-29 | 2010-04-27 | Kla-Tencor Technologies Corp. | Methods and systems for providing illumination of a specimen for a process performed on the specimen |
JP5758569B2 (ja) * | 2008-06-12 | 2015-08-05 | ギガフォトン株式会社 | スラブ型レーザ装置 |
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US20070001131A1 (en) | 2007-01-04 |
US20110192995A1 (en) | 2011-08-11 |
JP2009500796A (ja) | 2009-01-08 |
US20090095925A1 (en) | 2009-04-16 |
US7928417B2 (en) | 2011-04-19 |
US8461560B2 (en) | 2013-06-11 |
US7439530B2 (en) | 2008-10-21 |
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