JP5591901B2 - 太陽電池コンタクトの製造のための混合物及び太陽電池コンタクトの製造方法 - Google Patents
太陽電池コンタクトの製造のための混合物及び太陽電池コンタクトの製造方法 Download PDFInfo
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- JP5591901B2 JP5591901B2 JP2012233543A JP2012233543A JP5591901B2 JP 5591901 B2 JP5591901 B2 JP 5591901B2 JP 2012233543 A JP2012233543 A JP 2012233543A JP 2012233543 A JP2012233543 A JP 2012233543A JP 5591901 B2 JP5591901 B2 JP 5591901B2
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- silver
- mixture
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- paste
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/062—Glass compositions containing silica with less than 40% silica by weight
- C03C3/07—Glass compositions containing silica with less than 40% silica by weight containing lead
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/062—Glass compositions containing silica with less than 40% silica by weight
- C03C3/07—Glass compositions containing silica with less than 40% silica by weight containing lead
- C03C3/072—Glass compositions containing silica with less than 40% silica by weight containing lead containing boron
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
- C03C8/18—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing free metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Geochemistry & Mineralogy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Sustainable Energy (AREA)
- Sustainable Development (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Dispersion Chemistry (AREA)
- Glass Compositions (AREA)
- Conductive Materials (AREA)
- Photovoltaic Devices (AREA)
Description
Corporation(オハイオ州クリーブランド)にて市販されている。
1.5の太陽光条件で測定した。電気的試験の結果を表7に示す。
Claims (13)
- a.固体部分、及び
b.有機部分を含み、
c.該固体部分が、
i.85〜99重量%の銀成分、及び
ii.1〜15重量%のガラス成分を含み、
iii.該ガラス成分が
a.15〜75mol%のPbO、
b.5〜50mol%のSiO2、
c.0.1〜10mol%のTa2O5、及び
d.0.1〜15mol%のAl2O3を含み、
e.B2O3を含まない
ことを特徴とする太陽電池コンタクトを製造するための混合物。 - 請求項1の混合物において、前記有機部分に対する前記固体部分の重量比が20:1〜1:20であることを特徴とする混合物。
- 請求項2の混合物において、前記ガラス成分が、さらに0.1〜10mol%のZrO2を含むことを特徴とする混合物。
- 請求項3の混合物において、前記ガラス成分が、さらに0.1〜8mol%のP2O5を含むことを特徴とする混合物。
- 請求項1の混合物において、前記ガラス成分が、
a.26〜34mol%のPbO、
b.27〜33mol%のSiO2、
c.5〜11mol%のAl2O3、
d.0.1〜2mol%のTa2O5を含み、
e.さらに27〜33mol%のZnOを含む
ことを特徴とする混合物。 - 請求項1の混合物において、前記固体部分が、さらにBi2O3、Sb2O3、In2O3、Ga2O3、SnO、ZnO、Pb3O4、PbO、SiO2、ZrO2、Al2O3、B2O3、Ta2O5、4PbO・SiO2、3PbO・SiO2、2PbO・SiO2、3PbO・2SiO2、PbO・SiO2、ZnO・SiO2、及びZrO2・SiO2、及びこれらの反応生成物、及びこれらの組み合わせから成る群から選択される結晶性添加剤を含むことを特徴とする混合物。
- 請求項1の混合物において、前記固体部分が、60〜95重量%のフレーク状銀もしくは粉末状銀に由来する銀粒子、及び0.1〜20重量%のコロイダルシルバーに由来する銀粒子を含むことを特徴とする混合物。
- 請求項1の混合物において、前記銀成分が、フレーク状銀、粉末状銀、もしくはコロイダルシルバーに由来する銀粒子を含み、
固体部分がさらにリンを含み、そのリンの少なくとも一部が、前記銀粒子の少なくとも一部の被膜として存在することを特徴とする混合物。 - 請求項1の混合物において、前記銀成分が、銀酸化物又は銀塩、もしくはそれらの組み合わせから成る群から選択される化合物を含むことを特徴とする混合物。
- 請求項1の混合物において、前記固体部分が、さらに0.5〜25重量%の第一金属を含み、該第一金属は、Pb、Bi、Zn、In、Ga、及びSb、及びこれらと少なくとも1種の第二金属との合金から成る群から選択されることを特徴とする混合物。
- 請求項10の混合物において、少なくとも1種の第二金属が銀であることを特徴とする混合物。
- 太陽電池コンタクトの製造方法であって、
a.銀含有ペーストを反射防止シリコンウェハー上に塗布し、
b.ペーストを焼成して被膜を形成し、
c.該ペーストは固体部分と有機部分とを含み、該固体部分が、
i.85〜99重量%の銀、及び
ii.1〜15重量%のガラス成分を含み、
d.該ガラス成分が、
i.15〜75mol%のPbO、
ii.5〜50mol%のSiO2、
iii.0.1〜10mol%のTa2O5、及び
iv.0.1〜15mol%のAl2O3を含み、
v.B2O3を含まない
ことを特徴とする製造方法。 - 請求項12の製造方法において、前記ペーストが、650℃〜1000℃の炉設定温度で1秒〜5分間焼成されることを特徴とする製造方法。
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US10/988,208 US20060102228A1 (en) | 2004-11-12 | 2004-11-12 | Method of making solar cell contacts |
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JP2012233543A Expired - Fee Related JP5591901B2 (ja) | 2004-11-12 | 2012-10-23 | 太陽電池コンタクトの製造のための混合物及び太陽電池コンタクトの製造方法 |
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US (2) | US20060102228A1 (ja) |
EP (1) | EP1810343A4 (ja) |
JP (2) | JP2008520094A (ja) |
KR (1) | KR101127085B1 (ja) |
CN (2) | CN101379620B (ja) |
AU (1) | AU2005307036B2 (ja) |
CA (1) | CA2584073C (ja) |
TW (1) | TWI380458B (ja) |
WO (1) | WO2006055126A2 (ja) |
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2004
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- 2005-10-14 EP EP05815033.5A patent/EP1810343A4/en not_active Withdrawn
- 2005-10-14 WO PCT/US2005/036680 patent/WO2006055126A2/en active Application Filing
- 2005-10-14 CN CN2005800385361A patent/CN101379620B/zh not_active Expired - Fee Related
- 2005-10-14 KR KR1020077010508A patent/KR101127085B1/ko not_active IP Right Cessation
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TWI380458B (en) | 2012-12-21 |
KR20070084100A (ko) | 2007-08-24 |
US8889041B2 (en) | 2014-11-18 |
JP2008520094A (ja) | 2008-06-12 |
KR101127085B1 (ko) | 2012-03-23 |
CN102891215A (zh) | 2013-01-23 |
WO2006055126A3 (en) | 2007-11-15 |
TW200631187A (en) | 2006-09-01 |
CN102891215B (zh) | 2016-01-20 |
WO2006055126A2 (en) | 2006-05-26 |
AU2005307036A1 (en) | 2006-05-26 |
CN101379620B (zh) | 2012-10-24 |
EP1810343A4 (en) | 2015-10-14 |
AU2005307036B2 (en) | 2011-10-13 |
EP1810343A2 (en) | 2007-07-25 |
CN101379620A (zh) | 2009-03-04 |
CA2584073A1 (en) | 2006-05-26 |
US20100096598A1 (en) | 2010-04-22 |
US20060102228A1 (en) | 2006-05-18 |
JP2013030804A (ja) | 2013-02-07 |
CA2584073C (en) | 2012-08-14 |
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