JP5583765B2 - 電界効果トランジスタの製造方法 - Google Patents
電界効果トランジスタの製造方法 Download PDFInfo
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- JP5583765B2 JP5583765B2 JP2012517541A JP2012517541A JP5583765B2 JP 5583765 B2 JP5583765 B2 JP 5583765B2 JP 2012517541 A JP2012517541 A JP 2012517541A JP 2012517541 A JP2012517541 A JP 2012517541A JP 5583765 B2 JP5583765 B2 JP 5583765B2
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- 238000004519 manufacturing process Methods 0.000 title description 17
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- 125000006850 spacer group Chemical group 0.000 claims description 36
- 239000003989 dielectric material Substances 0.000 claims description 34
- 239000000463 material Substances 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 238000013461 design Methods 0.000 description 47
- 238000012938 design process Methods 0.000 description 14
- 238000012545 processing Methods 0.000 description 13
- 230000008569 process Effects 0.000 description 12
- 238000012360 testing method Methods 0.000 description 8
- 238000004088 simulation Methods 0.000 description 6
- 238000003860 storage Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 230000009977 dual effect Effects 0.000 description 3
- 238000012795 verification Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000013500 data storage Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000011960 computer-aided design Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 238000012804 iterative process Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000000547 structure data Methods 0.000 description 1
- 238000002076 thermal analysis method Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
- H01L21/845—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body including field-effect transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28123—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
12:活性領域(フィン)
14:誘電体及び金属領域
16:一時的スペーサ・ゲート
18、18a:誘電体材料
20:開口部(空間)
22:空間
24:置換ゲート
24a:研磨された平面
910:設計プロセス
920:設計構造体
930:ライブラリ要素
940:設計仕様
950:特徴データ
960:検証データ
970:設計ルール
980:ネットリスト
985:試験データ・ファイル
990:設計構造体
995:ステージ
Claims (8)
- 基板上に互いに間隔をおいて複数のフィン活性領域を形成するステップと、
前記複数のフィン活性領域のそれぞれを覆うように一時的スペーサ・ゲートを形成するステップと、
前記基板上に、前記複数のフィン活性領域のそれぞれを覆う前記一時的スペーサ・ゲートの上部よりも高く誘電体材料を堆積させるステップと、
前記誘電体材料の一部分をエッチングして、前記複数のフィン活性領域のそれぞれを覆う前記一時的スペーサ・ゲートの少なくとも前記上部を露出する開口を前記誘電体材料に形成するステップと、
前記一時的スペーサ・ゲートを除去して、前記複数のフィン活性領域のそれぞれと前記誘電体材料の残りの部分との間に空間を残すステップと、
前記複数のフィン活性領域のそれぞれと前記誘電体材料の前記残りの部分との間の前記空間及び前記開口をゲート材料で充填するステップとを含む電界効果トランジスタの製造方法。 - 前記一時的スペーサ・ゲートは、前記複数のフィン活性領域を覆ってポリシリコンを堆積させ、下にある前記基板上の余分な材料を除去することによって形成される、請求項1に記載の方法。
- 前記一時的スペーサ・ゲートを除去することは、前記一時的スペーサ・ゲートに対して選択的なエッチングによって行われる、請求項1に記載の方法。
- 前記ゲート材料は金属である、請求項1に記載の方法。
- 前記一時的スペーサ・ゲートは、前記フィン活性領域の側壁上に10nmから20nmまでの厚さまでポリシリコンを堆積させることによって形成される、請求項1に記載の方法。
- 前記一時的スペーサ・ゲートを形成する前に、前記複数のフィン活性領域の側壁上に誘電体層を堆積させるステップをさらに含む、請求項1に記載の方法。
- 前記ゲート材料の上面を平坦化するステップをさらに含む、請求項1に記載の方法。
- 前記空間内に堆積される前記ゲート材料の厚さは、隣接するフィン活性領域間の距離の30%を下回る、請求項1に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/491,649 | 2009-06-25 | ||
US12/491,649 US8053318B2 (en) | 2009-06-25 | 2009-06-25 | FET with replacement gate structure and method of fabricating the same |
PCT/US2010/036980 WO2010151400A2 (en) | 2009-06-25 | 2010-06-02 | Fet with replacement gate structure and method of fabricating the same |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012531745A JP2012531745A (ja) | 2012-12-10 |
JP5583765B2 true JP5583765B2 (ja) | 2014-09-03 |
Family
ID=43379739
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012517541A Active JP5583765B2 (ja) | 2009-06-25 | 2010-06-02 | 電界効果トランジスタの製造方法 |
Country Status (8)
Country | Link |
---|---|
US (2) | US8053318B2 (ja) |
EP (1) | EP2446466A4 (ja) |
JP (1) | JP5583765B2 (ja) |
CN (1) | CN102428549B (ja) |
CA (1) | CA2757818C (ja) |
SG (1) | SG176539A1 (ja) |
TW (1) | TW201118953A (ja) |
WO (1) | WO2010151400A2 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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US8533639B2 (en) * | 2011-09-15 | 2013-09-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Optical proximity correction for active region design layout |
KR20140047920A (ko) | 2012-10-15 | 2014-04-23 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
US8809947B1 (en) * | 2013-05-30 | 2014-08-19 | GlobalFoundries, Inc. | Integrated circuits and methods for fabricating integrated circuits with cladded non-planar transistor structures |
US9236480B2 (en) * | 2013-10-02 | 2016-01-12 | Globalfoundries Inc. | Methods of forming finFET semiconductor devices using a replacement gate technique and the resulting devices |
US9673331B2 (en) * | 2015-11-02 | 2017-06-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and formation method of semiconductor device structure |
JPWO2020183937A1 (ja) * | 2019-03-14 | 2020-09-17 |
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-
2009
- 2009-06-25 US US12/491,649 patent/US8053318B2/en not_active Expired - Fee Related
-
2010
- 2010-06-02 SG SG2011089075A patent/SG176539A1/en unknown
- 2010-06-02 CA CA2757818A patent/CA2757818C/en active Active
- 2010-06-02 JP JP2012517541A patent/JP5583765B2/ja active Active
- 2010-06-02 EP EP10792499A patent/EP2446466A4/en not_active Withdrawn
- 2010-06-02 CN CN201080021331.3A patent/CN102428549B/zh active Active
- 2010-06-02 WO PCT/US2010/036980 patent/WO2010151400A2/en active Application Filing
- 2010-06-04 TW TW099118100A patent/TW201118953A/zh unknown
-
2011
- 2011-09-09 US US13/229,273 patent/US8299534B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN102428549B (zh) | 2016-10-26 |
US8299534B2 (en) | 2012-10-30 |
WO2010151400A3 (en) | 2011-02-24 |
CA2757818C (en) | 2019-12-10 |
WO2010151400A2 (en) | 2010-12-29 |
JP2012531745A (ja) | 2012-12-10 |
US8053318B2 (en) | 2011-11-08 |
US20110316084A1 (en) | 2011-12-29 |
EP2446466A4 (en) | 2012-09-12 |
TW201118953A (en) | 2011-06-01 |
SG176539A1 (en) | 2012-01-30 |
EP2446466A2 (en) | 2012-05-02 |
CN102428549A (zh) | 2012-04-25 |
CA2757818A1 (en) | 2010-12-29 |
US20100327360A1 (en) | 2010-12-30 |
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