JP5583077B2 - 半導体装置及びその製造方法 - Google Patents
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- 239000010937 tungsten Substances 0.000 description 3
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Description
図1は、本実施形態に係る半導体装置を例示する斜視断面図であり、
図2は、本実施形態に係る半導体装置を例示する断面図である。
なお、図1においては、図示の便宜上、ゲート電極は省略している。
トレンチ13のうち、アクティブエリア12内に位置する部分の形状は、ゲート方向に延びる略六角柱形である。AA方向及び上下方向に対して平行な断面において、アクティブエリア12内に位置するトレンチ13の形状は、概ね、長方形から下側の2ヶ所の角部を切り落とした六角形である。すなわち、トレンチ13は、1つの底面13a、底面13aに接した一対の斜面13b、及び斜面13bに接した一対の側面13cによって構成されている。底面13aはシリコンの(100)面によって構成されており、斜面13bはシリコンの(111)面によって構成されており、側面13cはシリコンの(110)面によって構成されている。底面13aと斜面13bとのなす角度θは、55°である。
図3(a)〜(c)、図4(a)〜(c)、図5(a)〜(c)は、本実施形態に係る半導体装置の製造方法を例示する工程断面図である。
なお、図3(a)は、ゲート方向及び上下方向に対して平行な断面を示している。図3(b)〜図5(c)は、AA方向及び上下方向に対して平行な断面を示している。
これにより、図3(c)に示すように、マスク膜32において、レジストパターン33の開口部33aの直下域に、開口部32aが形成される。このようにして、シリコン基板10上に、ゲート方向に延びるライン状の開口部32aが形成されたマスク膜32が形成される。
次に、例えば酸化雰囲気中で熱処理を施すことにより、シリコン基板10の露出部分に熱酸化膜を形成する。これにより、トレンチ13におけるアクティブエリア12内に位置する部分の内面上に、シリコン酸化物からなるゲート絶縁膜15が形成される。このとき、シリコン基板10の結晶面によって熱酸化の速度が異なるため、ゲート絶縁膜15の膜厚が部分毎に異なる。すなわち、シリコンの(100)面によって構成される底面13a上に形成された部分15aは相対的に薄くなる。また、シリコンの(111)面によって構成される斜面13b上に形成された部分15bは、部分15aよりも厚くなり、例えば、部分15aの約1.15倍となる。更に、シリコンの(110)面によって構成される側面13c上に形成された部分15cは、部分15bよりも厚くなり、例えば、部分15aの約1.50倍となる。
次に、通常の方法により、シリコン基板10上に上部配線構造を形成する。このようにして、図1及び図2に示す半導体装置1が製造される。
本実施形態に係る半導体装置1においては、トレンチ13の内部及び上方にゲート電極16が設けられており、ゲート電極16の両側にソース・ドレイン領域21が形成されている。これにより、シリコン基板10におけるゲート電極16の直下域がチャネル領域となり、リセス型トランジスタ(RCAT)が構成される。
Claims (9)
- 単結晶シリコンからなり、上面が(100)面であり、前記上面にトレンチが形成された基板と、
少なくとも前記トレンチの内部に設けられたゲート電極と、
前記基板における前記トレンチを挟む領域に形成されたソース・ドレイン領域と、
前記基板と前記ゲート電極との間に設けられたゲート絶縁膜と、
を備え、
前記トレンチは、シリコンの(100)面からなる底面、前記底面に接し、シリコンの(111)面からなる一対の斜面、及び前記斜面に接し、シリコンの(110)面からなる一対の側面により構成されており、
前記ゲート絶縁膜における前記側面上に設けられた部分は、前記ゲート絶縁膜における前記斜面上に設けられた部分よりも厚く、前記ゲート絶縁膜における前記斜面上に設けられた部分は、前記ゲート絶縁膜における前記底面上に設けられた部分よりも厚く、
前記ソース・ドレイン領域は、前記側面及び前記斜面に接し、前記底面の中央部には接していないことを特徴とする半導体装置。 - 前記基板における前記斜面の下部に接した領域に形成され、前記ソース・ドレイン領域に含有される不純物とは異なる種類の不純物を含有した不純物拡散領域をさらに備えたことを特徴とする請求項1記載の半導体装置。
- 前記不純物拡散領域に含有される前記不純物は、炭素であることを特徴とする請求項2記載の半導体装置。
- 前記基板の上層部分に埋め込まれ、一方向に延び、前記上層部分を複数本のアクティブエリアに分断する複数本の素子分離絶縁体をさらに備え、
前記トレンチは、前記アクティブエリア及び前記素子分離絶縁体の配列方向に延び、前記複数本のアクティブエリア及び前記複数本の素子分離絶縁体にわたって形成されていることを特徴とする請求項1〜3のいずれか1つに記載の半導体装置。 - 前記トレンチにおける前記素子分離絶縁体内に形成された部分の幅は、前記トレンチにおける前記アクティブエリア内に形成された部分の幅よりも広いことを特徴とする請求項4記載の半導体装置。
- 単結晶シリコンからなり、上面がシリコンの(100)面である基板上に、開口部が形成されたマスク膜を形成する工程と、
前記マスク膜をマスクとしてドライエッチングを行う工程と、
前記ドライエッチングによって形成されたトレンチの底面に第1の不純物を注入する工程と、
前記マスク膜をマスクとして、アルカリ性のエッチング液を用いてウェットエッチングを施すことにより、前記トレンチに、シリコンの(100)面からなる底面、前記底面に接し、シリコンの(111)面からなる一対の斜面、及び、前記斜面に接し、シリコンの(110)面からなる一対の側面を形成する工程と、
前記底面上、前記斜面上及び前記側面上にゲート絶縁膜を形成する工程と、
少なくとも前記トレンチの内部にゲート電極を形成する工程と、
前記基板における前記トレンチを挟む領域に前記第1の不純物とは異なる種類の第2の不純物を注入する工程と、
前記第2の不純物を拡散させて、前記側面及び前記斜面に接し、前記底面の中央部には接しないソース・ドレイン領域を形成する工程と、
を備えたことを特徴とする半導体装置の製造方法。 - 前記第1の不純物として、炭素を注入することを特徴とする請求項6記載の半導体装置の製造方法。
- 前記アルカリ性のエッチング液は、過酸化水素水及びTMYの混合液、水酸化カリウム、テトラメチルアンモニアハイドロオキサイド、エチレンジアミンピロカテコール、並びに、水和ヒドラジンからなる群より選択された1種の薬液を含むことを特徴とする請求項6または7に記載の半導体装置の製造方法。
- 前記トレンチを挟む領域に不純物を注入する工程は、前記ゲート電極をマスクとして行うことを特徴とする請求項6〜8のいずれか1つに記載の半導体装置の製造方法。」
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JP2015056444A (ja) | 2013-09-10 | 2015-03-23 | 株式会社東芝 | 不揮発性記憶装置およびその製造方法 |
JP6473470B2 (ja) * | 2017-03-09 | 2019-02-20 | 矢崎総業株式会社 | 電気接続箱及びワイヤハーネス |
CN106876446B (zh) * | 2017-03-23 | 2024-05-10 | 深圳基本半导体有限公司 | 一种大功率槽栅门级t-mosfet结构设计 |
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JP7431746B2 (ja) | 2018-10-31 | 2024-02-15 | 浜松ホトニクス株式会社 | ダマシン配線構造、アクチュエータ装置、及びダマシン配線構造の製造方法 |
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