JP5582819B2 - 処理装置 - Google Patents
処理装置 Download PDFInfo
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- JP5582819B2 JP5582819B2 JP2010038075A JP2010038075A JP5582819B2 JP 5582819 B2 JP5582819 B2 JP 5582819B2 JP 2010038075 A JP2010038075 A JP 2010038075A JP 2010038075 A JP2010038075 A JP 2010038075A JP 5582819 B2 JP5582819 B2 JP 5582819B2
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Details Of Rigid Or Semi-Rigid Containers (AREA)
Description
[第1の実施の形態]
図1は、本発明の処理装置の第1の実施の形態としてのプラズマエッチング装置の概略構成を示す断面図である。図2は、図1の要部を拡大して示す断面図である。図1に示したように、プラズマエッチング装置200は、被処理体として、例えばFPD用のガラス基板(以下、単に「基板」と記す)Sに対してエッチングを行なう容量結合型の平行平板プラズマエッチング装置として構成されている。なお、FPDとしては、液晶ディスプレイ(LCD)、エレクトロルミネセンス(Electro Luminescence;EL)ディスプレイ、プラズマディスプレイパネル(PDP)等が例示される。
次に、図10を参照しながら、本発明の処理装置の第2の実施の形態にかかるプラズマエッチング装置について説明する。図10は、第1の実施の形態における図2に対応する処理容器101の要部断面を拡大して示す図面である。なお、以下の説明では、第1の実施の形態との相違点を中心に説明し、第2の実施の形態において第1の実施の形態と同じ構成については説明を省略する。
Claims (10)
- 長辺が2mを超える矩形の基板を処理する処理室を形成する処理容器と、
前記処理容器の外壁面を外側から覆う複数のプレート材を組み合わせた放熱抑制組立体と、
を備え、
前記プレート材が前記処理容器の外壁面に対して離間して配置され、かつ、隣接する前記プレート材が、接合部において重なり合い、一方のプレート材の端部が屈曲して他方のプレート材の端部を覆っていることにより、前記処理容器と前記放熱抑制組立体との間に空気断熱部を有する処理装置。 - 前記プレート材は、金属あるいは樹脂により構成されている請求項1に記載の処理装置。
- 前記プレート材の前記処理容器に対向する面が、鏡面加工されている請求項1又は2に記載の処理装置。
- 前記プレート材の前記処理容器に対向する面に、赤外線反射層を有している請求項1から3のいずれか1項に記載の処理装置。
- 前記プレート材の少なくとも一部が可視光透過性の材質により形成されている請求項1から4のいずれか1項に記載の処理装置。
- 前記処理容器の外壁面に、スペーサー部材が設けられており、該スペーサー部材に前記プレート材が固定されている請求項1から5のいずれか1項に記載に処理装置。
- 前記スペーサー部材によって前記空気断熱部が封止されている請求項6に記載の処理装置。
- 前記スペーサー部材が断熱性の材質により形成されている請求項6又は7に記載の処理装置。
- 前記空気断熱部の厚さが、5mmから20mmの範囲内である請求項1から8のいずれか1項に記載の処理装置。
- 複数の前記プレート材が互いに離間した状態で部分的または全体的に多重に配備されることにより、前記空気断熱部が部分的又は全体的に多層に設けられている請求項1から9のいずれか1項に記載の処理装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010038075A JP5582819B2 (ja) | 2010-02-24 | 2010-02-24 | 処理装置 |
CN201610269430.2A CN105957791B (zh) | 2010-02-24 | 2011-02-18 | 处理装置 |
CN2011100420019A CN102194638A (zh) | 2010-02-24 | 2011-02-18 | 处理装置 |
KR1020110015879A KR101302788B1 (ko) | 2010-02-24 | 2011-02-23 | 처리 장치 |
TW100105891A TWI508165B (zh) | 2010-02-24 | 2011-02-23 | Processing device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010038075A JP5582819B2 (ja) | 2010-02-24 | 2010-02-24 | 処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011176066A JP2011176066A (ja) | 2011-09-08 |
JP5582819B2 true JP5582819B2 (ja) | 2014-09-03 |
Family
ID=44602508
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010038075A Expired - Fee Related JP5582819B2 (ja) | 2010-02-24 | 2010-02-24 | 処理装置 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5582819B2 (ja) |
KR (1) | KR101302788B1 (ja) |
CN (2) | CN105957791B (ja) |
TW (1) | TWI508165B (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102011056823A1 (de) * | 2011-12-21 | 2013-06-27 | Thyssen Krupp Steel Europe AG | Düseneinrichtung für einen Ofen zum Wärmebehandeln eines Stahlflachprodukts und mit einer solchen Düseneinrichtung ausgestatteter Ofen |
TWI628689B (zh) * | 2013-05-09 | 2018-07-01 | 瑪森科技公司 | 用於保護電漿處理系統中之真空密封的系統與方法 |
JP6700156B2 (ja) * | 2016-11-16 | 2020-05-27 | 株式会社ニューフレアテクノロジー | 成膜装置 |
JP6633030B2 (ja) * | 2017-07-14 | 2020-01-22 | 本田技研工業株式会社 | レーザ遮光装置 |
CN109727838B (zh) * | 2017-10-31 | 2021-09-17 | 北京北方华创微电子装备有限公司 | 一种等离子体产生腔及半导体加工设备 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61287223A (ja) * | 1985-06-14 | 1986-12-17 | Fujitsu Ltd | 熱処理炉 |
CN2225835Y (zh) * | 1994-06-08 | 1996-05-01 | 周晨曦 | 便携式食品保温箱 |
JP4442171B2 (ja) * | 2003-09-24 | 2010-03-31 | 東京エレクトロン株式会社 | 熱処理装置 |
FR2878766B1 (fr) * | 2004-12-08 | 2007-06-22 | Total France Sa | Plateau interne pour enceinte |
JP2006284077A (ja) * | 2005-03-31 | 2006-10-19 | Kumamoto Technology & Industry Foundation | 熱輻射反射炉 |
JP4997842B2 (ja) * | 2005-10-18 | 2012-08-08 | 東京エレクトロン株式会社 | 処理装置 |
CN100477091C (zh) * | 2005-10-18 | 2009-04-08 | 东京毅力科创株式会社 | 处理装置 |
SG146607A1 (en) * | 2007-05-04 | 2008-10-30 | Asm Tech Singapore Pte Ltd | Multi-layer thermal insulation for a bonding system |
-
2010
- 2010-02-24 JP JP2010038075A patent/JP5582819B2/ja not_active Expired - Fee Related
-
2011
- 2011-02-18 CN CN201610269430.2A patent/CN105957791B/zh active Active
- 2011-02-18 CN CN2011100420019A patent/CN102194638A/zh active Pending
- 2011-02-23 TW TW100105891A patent/TWI508165B/zh active
- 2011-02-23 KR KR1020110015879A patent/KR101302788B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
CN105957791B (zh) | 2018-07-10 |
KR101302788B1 (ko) | 2013-09-02 |
JP2011176066A (ja) | 2011-09-08 |
TWI508165B (zh) | 2015-11-11 |
CN102194638A (zh) | 2011-09-21 |
KR20110097679A (ko) | 2011-08-31 |
CN105957791A (zh) | 2016-09-21 |
TW201203349A (en) | 2012-01-16 |
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