JP5575309B1 - 集積回路装置 - Google Patents
集積回路装置 Download PDFInfo
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- JP5575309B1 JP5575309B1 JP2013162647A JP2013162647A JP5575309B1 JP 5575309 B1 JP5575309 B1 JP 5575309B1 JP 2013162647 A JP2013162647 A JP 2013162647A JP 2013162647 A JP2013162647 A JP 2013162647A JP 5575309 B1 JP5575309 B1 JP 5575309B1
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- 239000004065 semiconductor Substances 0.000 claims abstract description 76
- 239000000758 substrate Substances 0.000 claims abstract description 76
- 239000004020 conductor Substances 0.000 claims description 43
- 239000010419 fine particle Substances 0.000 claims description 27
- 239000003990 capacitor Substances 0.000 claims description 16
- 229910018557 Si O Inorganic materials 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 8
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 8
- 238000011049 filling Methods 0.000 description 17
- 229910052751 metal Inorganic materials 0.000 description 17
- 239000002184 metal Substances 0.000 description 17
- 238000000034 method Methods 0.000 description 15
- 230000003287 optical effect Effects 0.000 description 9
- 229910045601 alloy Inorganic materials 0.000 description 8
- 239000000956 alloy Substances 0.000 description 8
- 239000013078 crystal Substances 0.000 description 8
- 239000006185 dispersion Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 230000008054 signal transmission Effects 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000002114 nanocomposite Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 230000000149 penetrating effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical compound [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 2
- 239000002612 dispersion medium Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000000615 nonconductor Substances 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 230000002250 progressing effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- -1 resistors Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
- H01L27/0676—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type comprising combinations of diodes, or capacitors or resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
- H01L23/5223—Capacitor integral with wiring layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
【解決手段】半導体基板101と、能動素子Q1と、受動素子PS2とを含む。能動素子Q1は、半導体基板101によって構成されており、受動素子PS2は、半導体基板1の厚み方向に設けられた溝状又は孔状の要素形成領域111、112、113の内部に充填された機能要素532、322、521を含む。
【選択図】図1
Description
CH3O−[SinOn−1(CH3)n(OCH3)n]−CH3
で表わされるアルキルアルコキシシランである。この場合の反応式は、次のようになる。
Si+ CH3O−[SinOn−1(CH3)n(OCH3)n]−CH3→SiO2+(C、H、O)↑
半導体基板101が、Si基板である場合は、上述した反応がSi基板のSiとの間でも起こる。そのほか、オルガノポリシロキサン(官能性側鎖アルコキシシラン)を用いることもできる。具体的には、Si又はジシロキサンに、アルコキシ基(RO)がついたもの等がある。なお、Rは有機基である。
101 半導体基板
Q1 能動素子
PS1、PS2 受動素子
Claims (2)
- 半導体基板と、能動素子と、受動素子とを含む集積回路装置であって、
前記能動素子は、前記半導体基板によって構成されており、
前記受動素子は、前記半導体基板の厚み方向に設けられた溝又は孔内に充填された機能要素を含み、前記能動素子と電気的に接続されており、
前記機能要素は、Si微粒子と、有機Si化合物とを反応させて得られたSi-O結合領域を含んでおり、
前記能動素子は、ツェナーダイオードであり、
前記ツェナーダイオードは、N型及びP型の半導体領域が前記半導体基板で構成され、前記半導体基板を貫通する一対の導体に電気的に接続されるものであり、
前記導体は、前記受動素子の機能要素であって、一端が電子部品接続用端子電極を構成しており、
前記受動素子は、キャパシタであって、前記能動素子と電気的に接続される、
集積回路装置。 - 集積回路装置と、電子部品とを含む電子デバイスであって、
前記集積回路装置は、請求項1に記載されたものでなり、
前記電子部品は、前記集積回路装置の前記半導体基板の上に搭載され、前記導体と電気的に接続されている、
電子デバイス。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013162647A JP5575309B1 (ja) | 2013-08-05 | 2013-08-05 | 集積回路装置 |
US14/341,956 US9349720B2 (en) | 2013-08-05 | 2014-07-28 | Integrated circuit device |
EP14179869.4A EP2835829B1 (en) | 2013-08-05 | 2014-08-05 | Method for manufacturing an integrated circuit device |
CN201410381480.0A CN104347624B (zh) | 2013-08-05 | 2014-08-05 | 集成电路装置 |
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JP2013162647A JP5575309B1 (ja) | 2013-08-05 | 2013-08-05 | 集積回路装置 |
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JP2014135820A Division JP5934752B2 (ja) | 2014-07-01 | 2014-07-01 | 集積回路装置 |
Publications (2)
Publication Number | Publication Date |
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JP5575309B1 true JP5575309B1 (ja) | 2014-08-20 |
JP2015032752A JP2015032752A (ja) | 2015-02-16 |
Family
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JP2013162647A Active JP5575309B1 (ja) | 2013-08-05 | 2013-08-05 | 集積回路装置 |
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US (1) | US9349720B2 (ja) |
EP (1) | EP2835829B1 (ja) |
JP (1) | JP5575309B1 (ja) |
CN (1) | CN104347624B (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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GB2524532A (en) * | 2014-03-26 | 2015-09-30 | Nokia Technologies Oy | Apparatus, methods and computer programs for establishing wireless connections |
CN107924611A (zh) * | 2015-09-14 | 2018-04-17 | 金泰克斯公司 | 基于车辆的可训练收发器和用户验证 |
RU2719108C1 (ru) * | 2016-06-30 | 2020-04-17 | Иллинойс Тул Воркс Инк. | Держатель для планшетного компьютера/смартфона с проводным подключением в виде пульта управления оборудованием |
CN110190002B (zh) * | 2019-07-04 | 2021-01-12 | 环维电子(上海)有限公司 | 一种半导体组件及其制造方法 |
CN110444533B (zh) * | 2019-08-21 | 2021-02-09 | 江苏中科君芯科技有限公司 | 防静电igbt模块结构 |
US11948933B2 (en) * | 2022-02-09 | 2024-04-02 | Semiconductor Components Industries, Llc | Semiconductor devices and methods of manufacturing semiconductor devices |
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JPH01281747A (ja) * | 1988-05-09 | 1989-11-13 | Nec Corp | 絶縁膜埋込みトレンチの形成方法 |
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JP2005093531A (ja) * | 2003-09-12 | 2005-04-07 | Oki Electric Ind Co Ltd | 半導体素子の構造とその製造方法 |
JP2006019443A (ja) * | 2004-06-30 | 2006-01-19 | Fujitsu Ltd | 薄膜キャパシタ、これを用いた半導体装置、および薄膜キャパシタの製造方法 |
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-
2013
- 2013-08-05 JP JP2013162647A patent/JP5575309B1/ja active Active
-
2014
- 2014-07-28 US US14/341,956 patent/US9349720B2/en active Active
- 2014-08-05 CN CN201410381480.0A patent/CN104347624B/zh active Active
- 2014-08-05 EP EP14179869.4A patent/EP2835829B1/en not_active Not-in-force
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JPH01281747A (ja) * | 1988-05-09 | 1989-11-13 | Nec Corp | 絶縁膜埋込みトレンチの形成方法 |
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Publication number | Publication date |
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CN104347624A (zh) | 2015-02-11 |
US20150035114A1 (en) | 2015-02-05 |
US9349720B2 (en) | 2016-05-24 |
JP2015032752A (ja) | 2015-02-16 |
EP2835829A2 (en) | 2015-02-11 |
EP2835829A3 (en) | 2015-03-18 |
EP2835829B1 (en) | 2017-07-19 |
CN104347624B (zh) | 2018-05-01 |
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