JP4778120B1 - 電子機器 - Google Patents
電子機器 Download PDFInfo
- Publication number
- JP4778120B1 JP4778120B1 JP2011050361A JP2011050361A JP4778120B1 JP 4778120 B1 JP4778120 B1 JP 4778120B1 JP 2011050361 A JP2011050361 A JP 2011050361A JP 2011050361 A JP2011050361 A JP 2011050361A JP 4778120 B1 JP4778120 B1 JP 4778120B1
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- Prior art keywords
- metallized
- layer
- melting point
- metal component
- point metal
- Prior art date
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- 239000002184 metal Substances 0.000 claims abstract description 173
- 229910052751 metal Inorganic materials 0.000 claims abstract description 173
- 238000002844 melting Methods 0.000 claims abstract description 158
- 230000008018 melting Effects 0.000 claims abstract description 158
- 239000000758 substrate Substances 0.000 claims abstract description 56
- 239000004065 semiconductor Substances 0.000 claims description 48
- 238000009792 diffusion process Methods 0.000 claims description 27
- 229910052709 silver Inorganic materials 0.000 claims description 13
- 239000004973 liquid crystal related substance Substances 0.000 claims description 11
- 238000010248 power generation Methods 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 238000004891 communication Methods 0.000 claims description 4
- 238000001465 metallisation Methods 0.000 claims description 4
- 229910052797 bismuth Inorganic materials 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 239000003870 refractory metal Substances 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 238000011049 filling Methods 0.000 abstract description 19
- 230000003647 oxidation Effects 0.000 abstract description 16
- 238000007254 oxidation reaction Methods 0.000 abstract description 16
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- 238000000034 method Methods 0.000 description 18
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- 239000000843 powder Substances 0.000 description 13
- 230000001681 protective effect Effects 0.000 description 12
- 239000004332 silver Substances 0.000 description 10
- 238000013508 migration Methods 0.000 description 9
- 230000005012 migration Effects 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 239000002923 metal particle Substances 0.000 description 7
- 239000004020 conductor Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 238000002161 passivation Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
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- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
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- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910052789 astatine Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- 229910052759 nickel Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
- H05K1/097—Inks comprising nanoparticles and specially adapted for being sintered at low temperature
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- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
- H05K1/111—Pads for surface mounting, e.g. lay-out
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H01L2224/8119—Arrangement of the bump connectors prior to mounting
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- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81193—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
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Abstract
【解決手段】基板11は、所定のパターンを有するメタライズ配線12を有している。メタライズ配線12は、メタライズ層121と、絶縁層122とを含んでいる。メタライズ層121は、高融点金属成分と低融点金属成分とを含み、高融点金属成分及び低融点金属成分が互いに拡散接合している。絶縁層122は、メタライズ層121と同時に形成されたもので、メタライズ層121の外面を覆っている。電子部品14は、メタライズ配線12のメタライズ層121に電気的に接続されている。
【選択図】図2
Description
多くのパーソナル・コンピュータは、例えば、図12に図示するように、CPU(Central Processing Unit)141と、DRAM等のメイン・メモリ143が中心をなし、これにハードディスク・コントローラ146、グラフィック・コントローラ145等を付加した基本的な構成を有する。各構成部分は、通信路となるCPUバス12B1、メモリバス12B2、内部バス12B3、12B4等によって結ばれており、これらのバス12B1〜12B4はチップ・セット144によって結合されている。CPU141は、多くの場合、メモリ機能の一部(キャッシュメモリ)142を含んでおり、メイン・メモリ143は、データとプログラムの情報を保持する。更に、周辺装置4として、入力装置43(キーボード、マウス、スキャナ等)、出力装置41(液晶ディスプレイ、スピーカ等)、二次記憶装置(ハード・ディスク・ドライブ等)42及び通信装置(モデム、ネットワークインターフェース等)を備える。
次に、携帯電話は、例えば、図13に例示するように、アンテナ154、フロント・エンド・モジュール141、電力増幅回路142、トランシーバIC140及びデジタル・ベース・バンド147等を有する。トランシーバICは、送信回路143、受信回路148、ベースバンド帯の処理を行うアナログ回路145及び入出力インターフェースI/O146等を有している。アナログ回路145は、A/D変換回路151及びD/A変換回路等152を含んでいる。
次に、図14を参照すると、第1のチップ部品14Aと、第2のチップ部品14Bと、第3のチップ部品14Cとを積層した積層電子装置が図示されている。第1のチップ部品14A及び第3のチップ部品14Cは、例えば図12に示したコンピュータにおいて、メイン・メモリ143のチップ及びそれに接続されるロジックICチップ等である。第2のチップ部品14Bは、例えばインターポーザであり、メイン・メモリ・チップを構成する第1のチップ部品14Aと、ロジックICチップを構成する第3のチップ部品14Cとの間にあって、両者間に所定の配線を形成するものである。第2のチップ部品14Bと第3のチップ部品14Cとの間、及び、第2のチップ部品14Bと第1のチップ部品14Aとの間には、所定のパターンを有するメタライズ配線12が形成されている。
図16及び図17を参照すると、シリコン基板11の裏面(光入射面とは反対側)のp+半導体層14Pおよびn+半導体層14nとの電気的接続を行なうために、シリコン基板11の裏面に形成されたパッシベーション膜126が所望のパターン形状に除去され、パッシベーション膜126が除去された部分に合わせて、p+半導体層14P上にp電極コンタクト15pが形成されるとともに、n+半導体層14n上にn電極コンタクト15pが形成される。また、パッシベーション膜126及びn電極コンタクト15nの上に、nメタライズ配線12nが形成されるとともに、パッシベーション膜126及び及びp電極コンタクト15pの上にpメタライズ配線12pが形成される。pメタライズ配線12Pおよびnメタライズ配線12nは、主に太陽電池セルに発生した電流を収集する電極であり、これらは、インター・デジタル電極として形成されている。一枚のシリコン基板11上に、多数の太陽電池セルを配列してゆく場合には、pメタライズ配線12pおよびnメタライズ配線12nの何れか一方に、太陽電池セル間を接続するバス電極としての役割を担わせることができる。
図19を参照すると、太陽電池を用いた太陽光発電装置6が図示されている。図示の太陽光発電装置は、太陽電池61から出力された直流電力を、電力変換装置62によって交流に変換し、変換された交流電力を、分電装置63を経て、負荷65に供給するとともに、余剰電力を商用交流系統7に売電するようになっている。電力変換装置62及び分電装置63は、制御装置64によって制御される。太陽電池61は、図16〜図18に示した太陽電池を多数集合したものである。
次に、図20を参照すると、本発明に係る発光ダイオードが図示されている。図20に例示された発光ダイオードは、発光素子14と、nメタライズ配線(第1メタライズ配線)12nと、pメタライズ配線(第2メタライズ配線)12pとを含んでいる。発光素子14は、透明結晶基板161に積層されている。透明結晶基板161は、サファイヤ等で構成されたもので、表面が光出射面であり、発光素子14は透明結晶基板2の光出射面とは反対側の他面に積層されている。
図21を参照すると、m個の発光ダイオードLED1〜LEDmを有する発光装置が図示されている。発光ダイオードLED1〜LEDmは、図20に示したものであって、発光素子14と、nメタライズ配線(第1メタライズ配線)12nと、pメタライズ配線(第2メタライズ配線)12pとを含んでいる。発光ダイオードLED1〜LEDmの具体的な構造は、図20を参照して詳説したとおりである。発光ダイオードLED1〜LEDmは、単列、又は、複数列配置してもよい。また、基板は、発光ダイオードLED1〜LEDmにおいて、共通のものであってもよい。更に、R、G、Bの発光ダイオードの配列であってもよいし、単色光の発光ダイオードを配列したものであってもよい。
図22は、液晶ディスプレイを示す図で、液晶パネル8とバックライト9とを組み合わせた構造となっている。バックライト9は、図20に示したm個の発光ダイオードLED1〜LEDmを、行列状に整列したものである。この液晶ディスプレイが、高品質で、信頼度が高いものであることは、これまでの説明から明らかである。
12 メタライズ配線
121 メタライズ層
122 絶縁層
14 電子部品
Claims (12)
- 基板と、電子部品とを含む電子機器であって、
前記基板は、メタライズ配線を有しており、
前記メタライズ配線は、メタライズ層と、絶縁層とを含んでおり、
前記メタライズ層は、高融点金属成分と低融点金属成分とを含み、前記高融点金属成分及び前記低融点金属成分が互いに拡散接合しており、
前記絶縁層は、前記メタライズ層と同時に形成され、前記メタライズ層の外面を覆っており、
前記電子部品は、前記メタライズ層に電気的に接続されている。 - 請求項1に記載された電子機器であって、前記高融点金属成分は、Ag、Cu、Au、Pt、Ti、Zn、Al、Fe、SiまたはNiの群から選択された少なくとも1種を含んでおり、
前記低融点金属成分は、Sn、In、BiまたはGaの群から選択された少なくとも1種を含んでいる。 - 請求項1に記載された電子機器であって、前記メタライズ配線は、金属膜の上に形成され、前記メタライズ層が前記金属膜の上に付着している。
- 請求項1に記載された電子機器であって、コンピュータ、モバイル情報機器、コンピュータ周辺端末装置、OA機器、通信機器、業務用情報端末・自動認識装置、カーエレクトロニクス機器、産業用機械、エンターテインメント機器、音響機器、映像機器又は家庭用電気機器の群から選択された少なくとも一種である。
- 複数のチップ部品を積層した電子部品であって、
前記複数のチップ部品は、メタライズ配線によって接合されており、
前記メタライズ配線は、メタライズ層と、絶縁層とを含んでおり、
前記メタライズ層分は、高融点金属成分と低融点金属成分とを含み、前記高融点金属成分及び前記低融点金属成分が互いに拡散接合しており、
前記絶縁層は、前記メタライズ層と同時に形成され、前記メタライズ層の外面を覆っており、
前記チップ部品は、その端子電極が前記メタライズ層に電気的に接続されている。 - 半導体基板と、第1メタライズ配線と、第2メタライズ配線とを含む太陽電池であって、
前記半導体基板は、n型半導体層及び前記p型半導体層を有しており、
前記第1メタライズ配線は、前記n型半導体層に接続されており、
前記第2メタライズ配線は、前記p型半導体層に接続されており、
前記第1メタライズ配線及び前記第2メタライズ配線のそれぞれは、メタライズ層と、絶縁層とを含んでおり、
前記メタライズ層は、高融点金属成分と低融点金属成分とを含み、前記高融点金属成分及び前記低融点金属成分が互いに拡散接合しており、
前記絶縁層は、前記メタライズ層と同時に形成され、前記メタライズ層の外面を覆っている。 - 太陽電池を含む太陽光発電装置であって、
前記太陽電池は、半導体基板と、第1メタライズ配線と、第2メタライズ配線とを含んでおり、
前記半導体基板は、n型半導体層及び前記p型半導体層を有しており、
前記第1メタライズ配線は、前記n型半導体層に接続されており、
前記第2メタライズ配線は、前記p型半導体層に接続されており、
前記第1メタライズ配線及び前記第2メタライズ配線のそれぞれは、メタライズ層と、絶縁層とを含んでおり、
前記メタライズ層は、高融点金属成分と低融点金属成分とを含み、前記高融点金属成分及び前記低融点金属成分が互いに拡散接合しており、
前記絶縁層は、前記メタライズ層と同時に形成され、前記メタライズ層の外面を覆っている。 - 発光素子と、第1メタライズ配線と、第2メタライズ配線とを含む発光ダイオードであって、
前記発光素子は、n型半導体層と、p型半導体層とを積層した構造を含んでおり、
前記第1メタライズ配線は、前記n型半導体層に接続されており、
前記第2メタライズ配線は、前記p型半導体層に接続されており、
前記第1メタライズ配線及び前記第2メタライズ配線のそれぞれは、メタライズ層と、絶縁層とを含んでおり、
前記メタライズ層は、高融点金属成分と低融点金属成分とを含み、前記高融点金属成分及び前記低融点金属成分が互いに拡散接合しており、
前記絶縁層は、前記メタライズ層と同時に形成され、前記メタライズ層の外面を覆っている。 - 発光ダイオードを有する発光装置であって、
前記発光ダイオードは、発光素子と、第1メタライズ配線と、第2メタライズ配線とを含んでおり、
前記発光素子は、n型半導体層と、p型半導体層とを積層した構造を含んでおり、
前記第1メタライズ配線は、前記n型半導体層に接続されており、
前記第2メタライズ配線は、前記p型半導体層に接続されており、
前記第1メタライズ配線及び前記第2メタライズ配線のそれぞれは、メタライズ層と、絶縁層とを含んでおり、
前記メタライズ層は、高融点金属成分と低融点金属成分とを含み、前記高融点金属成分及び前記低融点金属成分が互いに拡散接合しており、
前記絶縁層は、前記メタライズ層と同時に形成され、前記メタライズ層の外面を覆っている。 - 発光ダイオードを有する照明装置であって、
前記発光ダイオードは、発光素子と、第1メタライズ配線と、第2メタライズ配線とを含んでおり、
前記発光素子は、n型半導体層と、p型半導体層とを積層した構造を含んでおり、
前記第1メタライズ配線は、前記n型半導体層に接続されており、
前記第2メタライズ配線は、前記p型半導体層に接続されており、
前記第1メタライズ配線及び前記第2メタライズ配線のそれぞれは、メタライズ層と、絶縁層とを含んでおり、
前記メタライズ層は、高融点金属成分と低融点金属成分とを含み、前記高融点金属成分及び前記低融点金属成分が互いに拡散接合しており、
前記絶縁層は、前記メタライズ層と同時に形成され、前記メタライズ層の外面を覆っている。 - 発光ダイオードを有する信号灯であって、
前記発光ダイオードは、発光素子と、第1メタライズ配線と、第2メタライズ配線とを含んでおり、
前記発光素子は、n型半導体層とp型半導体層とを積層した構造を含んでおり、
前記第1メタライズ配線は、前記n型半導体層に接続されており、
前記第2メタライズ配線は、前記p型半導体層に接続されており、
前記第1メタライズ配線及び前記第2メタライズ配線のそれぞれは、メタライズ層と、絶縁層とを含んでおり、
前記メタライズ層は、高融点金属成分と低融点金属成分とを含み、前記高融点金属成分及び前記低融点金属成分が互いに拡散接合しており、
前記絶縁層は、前記メタライズ層と同時に形成され、前記メタライズ層の外面を覆っている。 - 液晶パネルと、バックライトとを含む液晶ディスプレイであって、
前記バックライトは、前記液晶パネルを照射するものであって、複数の発光ダイオードを配列したものでなり、
前記発光ダイオードは、発光素子と、第1メタライズ配線と、第2メタライズ配線とを含んでおり、
前記発光素子は、n型半導体層と、p型半導体層とを積層した構造を含んでおり、
前記第1メタライズ配線は、前記n型半導体層に接続されており、
前記第2メタライズ配線は、前記p型半導体層に接続されており、
前記第1メタライズ配線及び前記第2メタライズ配線のそれぞれは、メタライズ層と、絶縁層とを含んでおり、
前記メタライズ層は、高融点金属成分と低融点金属成分とを含み、前記高融点金属成分及び前記低融点金属成分が互いに拡散接合しており、
前記絶縁層は、前記メタライズ層と同時に形成され、前記メタライズ層の外面を覆っている。
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TW100147025A TWI412303B (zh) | 2011-03-08 | 2011-12-19 | 電子機器、電子零件、太陽能電池、太陽光發電裝置、發光二極體、發光裝置、照明裝置、號誌燈及液晶顯示器 |
CN201210016743.9A CN102686021B (zh) | 2011-03-08 | 2012-01-18 | 电子设备 |
KR1020120018772A KR101184121B1 (ko) | 2011-03-08 | 2012-02-24 | 전자기기 |
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JP2013211385A (ja) * | 2012-03-30 | 2013-10-10 | Sanyo Electric Co Ltd | 太陽電池及びその製造方法 |
JP2014063846A (ja) * | 2012-09-20 | 2014-04-10 | Asahi Kasei E-Materials Corp | 金属面の保護層とその形成方法 |
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CN103229350B (zh) * | 2011-03-02 | 2016-06-22 | 株式会社藤仓 | 色素敏化太阳能电池、其制造方法、色素敏化太阳能电池模块以及其制造方法 |
JP5575309B1 (ja) * | 2013-08-05 | 2014-08-20 | 有限会社 ナプラ | 集積回路装置 |
US20160339538A1 (en) * | 2015-05-18 | 2016-11-24 | Toyota Motor Engineering & Manufacturing North America, Inc. | High temperature bonding processes incorporating traces |
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